npj 2D Materials and Applications

Papers
(The TQCC of npj 2D Materials and Applications is 17. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-07-01 to 2024-07-01.)
ArticleCitations
Bandgap engineering of two-dimensional semiconductor materials606
Prospects challenges and stability of 2D MXenes for clean energy conversion and storage applications192
Recent advances of MXenes as electrocatalysts for hydrogen evolution reaction160
2D boron nitride nanosheets for polymer composite materials131
Intercalation as a versatile tool for fabrication, property tuning, and phase transitions in 2D materials130
Broadband optical properties of monolayer and bulk MoS2129
Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers116
Naturally occurring van der Waals materials80
Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing74
Synthesis of epitaxial monolayer Janus SPtSe67
2D semiconductors for specific electronic applications: from device to system64
Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces62
Copper single-atoms embedded in 2D graphitic carbon nitride for the CO2 reduction61
Giant persistent photoconductivity in monolayer MoS2 field-effect transistors59
2D graphene oxide–aptamer conjugate materials for cancer diagnosis57
Improving stability of organometallic-halide perovskite solar cells using exfoliation two-dimensional molybdenum chalcogenides54
Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers51
Layer-dependent optical and dielectric properties of centimeter-scale PdSe2 films grown by chemical vapor deposition50
Deep learning model to predict fracture mechanisms of graphene49
Superlubricity under ultrahigh contact pressure enabled by partially oxidized black phosphorus nanosheets47
Origins of genuine Ohmic van der Waals contact between indium and MoS247
All inkjet-printed electronics based on electrochemically exfoliated two-dimensional metal, semiconductor, and dielectric45
The resurrection of tellurium as an elemental two-dimensional semiconductor44
Direct observation of ferroelectricity in two-dimensional MoS243
Excitons and light-emission in semiconducting MoSi2X4 two-dimensional materials42
Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe242
Ultra-broad spectral photo-response in FePS3 air-stable devices41
Efficient water desalination with graphene nanopores obtained using artificial intelligence41
Multilevel artificial electronic synaptic device of direct grown robust MoS2 based memristor array for in-memory deep neural network41
Dual-phase MoS2/MXene/CNT ternary nanohybrids for efficient electrocatalytic hydrogen evolution40
Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors40
Robust ferromagnetism in wafer-scale monolayer and multilayer Fe3GeTe240
In-plane anisotropic optical and mechanical properties of two-dimensional MoO339
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys38
Boosting proximity spin–orbit coupling in graphene/WSe2 heterostructures via hydrostatic pressure37
Chemical vapor deposition-grown nitrogen-doped graphene’s synthesis, characterization and applications34
Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity34
Gas-mediated liquid metal printing toward large-scale 2D semiconductors and ultraviolet photodetector34
2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film33
Electron–phonon coupling in superconducting 1T-PdTe232
Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors32
2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects32
Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing30
Imaging and identification of point defects in PtTe230
Electric field induced giant valley polarization in two dimensional ferromagnetic WSe2/CrSnSe3 heterostructure29
Ising ferromagnetism and robust half-metallicity in two-dimensional honeycomb-kagome Cr2O3 layer28
Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate28
Uncovering topographically hidden features in 2D MoSe2 with correlated potential and optical nanoprobes27
Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions27
Atomically-thin single-photon sources for quantum communication27
Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers26
The band-edge excitons observed in few-layer NiPS326
On electrically tunable stacking domains and ferroelectricity in moiré superlattices25
Carrier photodynamics in 2D perovskites with solution-processed silver and graphene contacts for bendable optoelectronics24
Facilely synthesized nitrogen-doped reduced graphene oxide functionalized with copper ions as electrocatalyst for oxygen reduction23
Nanomechanical probing and strain tuning of the Curie temperature in suspended Cr2Ge2Te6-based heterostructures23
Ultrafast hot carrier transfer in WS2/graphene large area heterostructures22
Temperature dependent moiré trapping of interlayer excitons in MoSe2-WSe2 heterostructures22
Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals22
Spiking neural networks based on two-dimensional materials22
Visualization of defect induced in-gap states in monolayer MoS222
Photoelectroactive artificial synapse and its application to biosignal pattern recognition22
Two-dimensional forms of robust CO2 reduction photocatalysts22
Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices21
Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures21
Anomalous valley Hall effect in antiferromagnetic monolayers21
Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet20
Cross-field optoelectronic modulation via inter-coupled ferroelectricity in 2D In2Se320
2D transistors rapidly printed from the crystalline oxide skin of molten indium19
Elastic flow instabilities and macroscopic textures in graphene oxide lyotropic liquid crystals19
High-throughput bandstructure simulations of van der Waals hetero-bilayers formed by 1T and 2H monolayers19
Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers19
Terahertz optics-driven phase transition in two-dimensional multiferroics18
Multiferroic and ferroelectric phases revealed in 2D Ti3C2Tx MXene film for high performance resistive data storage devices18
Cyclic production of biocompatible few-layer graphene ink with in-line shear-mixing for inkjet-printed electrodes and Li-ion energy storage18
Synthesis of high-quality monolayer tungsten disulfide with chlorophylls and its application for enhancing bone regeneration17
Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes17
Unveiling the complex structure-property correlation of defects in 2D materials based on high throughput datasets17
Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET17
Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors17
Exciton-polarons in the presence of strongly correlated electronic states in a MoSe2/WSe2 moiré superlattice17
Inkjet-printed low-dimensional materials-based complementary electronic circuits on paper17
Controllable potential barrier for multiple negative-differential-transconductance and its application to multi-valued logic computing17
Titanium disulfide as Schottky/ohmic contact for monolayer molybdenum disulfide17
0.065287828445435