npj 2D Materials and Applications

Papers
(The TQCC of npj 2D Materials and Applications is 18. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-06-01 to 2026-06-01.)
ArticleCitations
Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications207
Nanosheet fabrication from magnon thermal conductivity cuprates for the advanced thermal management146
WoundMx: multiplexed detection of wound infection biomarkers with a multimodal sensor system based on laser-induced graphene113
Piezoelectricity in NbOI2 for piezotronics and nanogenerators94
Tuning of spin-transfer torque in VSe2-based vdW magnetic tunnel junctions by electrode polytypes92
Transition-selective photocurrents in Floquet-driven monolayer MoSe291
Exciton-polarons in the presence of strongly correlated electronic states in a MoSe2/WSe2 moiré superlattice87
Water-based, large-scale transfer of 2D materials grown on sapphire substrates77
Dynamic dielectric permittivity tensor of in-plane hyperbolic van der Waals MoOCl2 and emergent chiral photonic applications63
Experimental and theoretical band alignment study of MPS3 (M = Mn, Fe, Co, Ni) for designing tailored 2D heterostructures59
Multiferroic nematic d-wave altermagnetism driven by orbital-order on the honeycomb lattice59
Transient photodoping and phonon dynamics in bulk and monolayer MoS2 by time resolved Raman scattering58
Photoluminescence enhancement in two-dimensional semiconductors via spacer-free metallic screening55
Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride54
Exfoliation procedure-dependent optical properties of solution deposited MoS2 films51
Origin of contact polarity at metal-2D transition metal dichalcogenide interfaces50
Quantifying stress distribution in ultra-large graphene drums through mode shape imaging50
Advancements in 2D layered material memristors: unleashing their potential beyond memory49
Engineering altermagnetism via layer shifts and spin order in bilayer MnPS346
Understanding and predicting trends in adsorption energetics on monolayer transition metal dichalcogenides46
Multi-functional polymorphic memory based on 2D ferroelectric tunnel junctions46
Programmable phonon-assisted resonant energy transfer between moiré cells in charge-tunable MoSe2-WS2 heterobilayers45
Ab initio elucidation of PTCDA intercalation mechanism in MoS2 bilayer44
“Popcorn-Like” fabrication for high performance reduced-graphene oxide via laser and microwave reduction process43
High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN42
Bio-inspired “Self-denoising” capability of 2D materials incorporated optoelectronic synaptic array42
Atomistic description of conductive bridge formation in two-dimensional material based memristor42
Impact ionization and the paradox of defects in transition metal dichalcogenide FETs41
Multiphase superconductivity at the interface between ultrathin FeTe islands and Bi2Te340
Non-planar graphene directly synthesized on intracavity optical microresonators for GHz repetition rate mode-locked lasers40
Homoepitaxial growth of isotopically enriched h10BN layers on h11BN crystals by high-temperature molecular beam epitaxy39
Cathode wrapping strategy with metal chalcogenide nanosheet for safer and longer lasting Li-ion batteries39
Gating monolayer and bilayer graphene with a two-dimensional semiconductor38
Designable exciton mixing through layer alignment in WS2-graphene heterostructures38
Spin-order-dependent magneto-elastic coupling in two dimensional antiferromagnetic MnPSe3 observed through Raman spectroscopy38
Enhancing plasmonic superconductivity in layered materials via dynamical Coulomb engineering38
Low T direct plasma assisted growth of graphene on sapphire and its integration in graphene/MoS2 heterostructure-based photodetectors35
Tunable anion transport and the chemical transistor effect in functionalized graphene oxide membranes34
Discovery of dynamic nature of 0D potential wells and potential walls in 2D TMD device systems32
Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study31
Enhancing electrically driven excitonic emission stability in WSe2 monolayer through contact engineering with HfN electrode30
Robust conductivity of goldene against structural defects and mechanical deformations: a first-principles study30
Electrochemical performance of molybdenum carbide MXene-few-layer graphene hybrid electrodes for aqueous supercapacitors30
Two-dimensional C20-based monolayers and heterostructures for photocatalytic overall water splitting30
Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition process30
Advance in additive manufacturing of 2D materials at the atomic and close-to-atomic scale30
Recent advances in retention and permeation of CO2 gas using MXene based membranes29
Amplification of interlayer exciton emission in twisted WSe2/WSe2/MoSe2 heterotrilayers29
Nanomechanical probing and strain tuning of the Curie temperature in suspended Cr2Ge2Te6-based heterostructures29
Mechanically-tunable bandgap closing in 2D graphene phononic crystals29
Many-body electronic structure, self-doped double-exchange, and Hund metallicity in 1T-CrTe2 bulk and monolayer29
Electrochemical detection of sulfamethoxazole antibiotics in water using MXene/ZIF-8 composite modified glassy carbon electrode28
Elucidating the role of stacking faults in TlGaSe2 on its thermoelectric properties28
First-principles theory of extending the spin qubit coherence time in hexagonal boron nitride28
Friction hysteretic behavior of supported atomically thin nanofilms27
Chalcogen and halogen surface termination coverage in MXenes—structure, stability, and properties27
Shift photocurrent vortices from topological polarization textures27
Fast interlayer energy transfer from the lower bandgap MoS2 to the higher bandgap WS227
Novel spintronic effects in two-dimensional van der Waals heterostructures27
Carbon-contaminated topological defects in hexagonal boron nitride for quantum photonics26
Interlayer shear coupling in bilayer graphene26
Linear and nonlinear optical response based on many-body GW-Bethe–Salpeter and Kadanoff–Baym approaches for two-dimensional layered semiconductors26
Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe3GeTe226
Beyond the K-valley: exploring unique trion states in indirect band gap monolayer WSe226
Absorption versus adsorption: high-throughput computation of impurities in 2D materials26
High-Tc 2D ambient BCS superconductors in hydrogenated transition-metal borides25
Foam with direction: unraveling the anisotropic radiation shielding properties of 2D boron nitride nanoplatelet foams25
Coulomb engineering of two-dimensional Mott materials24
Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors24
Mechanistic insights into the deformation and degradation of a 2D metal organic framework24
Experimental observation of spin−split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures23
A graphene/H-BN van der Waals heterostructure enabling superior (>30 dB) electrical tuning in terahertz devices22
Near-infrared to red-light emission and carrier dynamics in full series multilayer GaTe1−xSex (0≤x≤1) with structural evolution22
Hybrid and resonant states originated by the stabilization of borophene’s single χ6 polymorph on Ir(111)22
Printing ultrathin Quasi-2D Ga2O3 for fast yet highly responsive vertical photodetectors22
Improved strain engineering of 2D materials by adamantane plasma polymer encapsulation22
Oxide induced degradation in MoS2 field-effect transistors22
Electronic localization and optical activity of strain-engineered transition-metal dichalcogenide nanobubbles21
Mid-IR probing unveils vanadium doping-induced unsaturation of defect states in monolayer MoS221
Hexagonal boron nitride: interlayer with atomic scale precision for interface engineering in functional materials and devices21
Nitrogen embedding enhances stability and activity of single-atom motifs of MXenes under anodic polarization21
Naturally occurring 2D semiconductor with antiferromagnetic ground state21
Vacancy formation energy as a descriptor of the exfoliability of MAX phases to MXenes20
Higher-indexed Moiré patterns and surface states of MoTe2/graphene heterostructure grown by molecular beam epitaxy20
Complex magnetic exchange, anisotropy and skyrmionic textures in 2D ferromagnets with transition metals and chalcogens20
Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences20
Enhanced polarizability and tunable diamagnetic shift from monolayer WSe2 on relaxor ferroelectric19
Highly sensitive and reversible MXene-based micro quartz tuning fork gas sensors with tunable selectivity19
Oriented 2D Ruddlesden-Popper metal halides by pulsed laser deposition19
Unveiling the origin of n-type doping of natural MoS2: carbon19
High-performance junction-free field-effect transistor based on blue phosphorene19
Van der Waals injection-molded crystals19
Insulator–metal transition in CrSiTe3 triggered by structural distortion under pressure19
2D/2D heterojunction interfaces of 1T-MoS2 and Ti3C2 MXene: designing high-performance catalyst for the hydrogen evolution reaction19
High-throughput calculations of spin Hall conductivity in non-magnetic 2D materials19
Solution-processable 2D materials for monolithic 3D memory-sensing-computing platforms: opportunities and challenges18
Emerging frontiers in two-dimensional sliding ferroelectrics18
2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects18
Strain-tunable inter-valley scattering defines universal mobility enhancement in n- and p-type 2D TMDs18
Relaxation effects in transition metal dichalcogenide bilayer heterostructures18
Light-driven electrodynamics and demagnetization in FenGeTe2 (n = 3, 5) thin films18
Raman polarization switching in CrSBr18
Unraveling the influence of defects in Janus MoSSe and Janus alloys MoS2(1−x)Se2x18
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