npj 2D Materials and Applications

Papers
(The H4-Index of npj 2D Materials and Applications is 36. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-06-01 to 2026-06-01.)
ArticleCitations
Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications207
Nanosheet fabrication from magnon thermal conductivity cuprates for the advanced thermal management146
WoundMx: multiplexed detection of wound infection biomarkers with a multimodal sensor system based on laser-induced graphene113
Piezoelectricity in NbOI2 for piezotronics and nanogenerators94
Tuning of spin-transfer torque in VSe2-based vdW magnetic tunnel junctions by electrode polytypes92
Transition-selective photocurrents in Floquet-driven monolayer MoSe291
Exciton-polarons in the presence of strongly correlated electronic states in a MoSe2/WSe2 moiré superlattice87
Water-based, large-scale transfer of 2D materials grown on sapphire substrates77
Dynamic dielectric permittivity tensor of in-plane hyperbolic van der Waals MoOCl2 and emergent chiral photonic applications63
Multiferroic nematic d-wave altermagnetism driven by orbital-order on the honeycomb lattice59
Experimental and theoretical band alignment study of MPS3 (M = Mn, Fe, Co, Ni) for designing tailored 2D heterostructures59
Transient photodoping and phonon dynamics in bulk and monolayer MoS2 by time resolved Raman scattering58
Photoluminescence enhancement in two-dimensional semiconductors via spacer-free metallic screening55
Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride54
Exfoliation procedure-dependent optical properties of solution deposited MoS2 films51
Quantifying stress distribution in ultra-large graphene drums through mode shape imaging50
Origin of contact polarity at metal-2D transition metal dichalcogenide interfaces50
Advancements in 2D layered material memristors: unleashing their potential beyond memory49
Understanding and predicting trends in adsorption energetics on monolayer transition metal dichalcogenides46
Multi-functional polymorphic memory based on 2D ferroelectric tunnel junctions46
Engineering altermagnetism via layer shifts and spin order in bilayer MnPS346
Programmable phonon-assisted resonant energy transfer between moiré cells in charge-tunable MoSe2-WS2 heterobilayers45
Ab initio elucidation of PTCDA intercalation mechanism in MoS2 bilayer44
“Popcorn-Like” fabrication for high performance reduced-graphene oxide via laser and microwave reduction process43
Bio-inspired “Self-denoising” capability of 2D materials incorporated optoelectronic synaptic array42
Atomistic description of conductive bridge formation in two-dimensional material based memristor42
High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN42
Impact ionization and the paradox of defects in transition metal dichalcogenide FETs41
Non-planar graphene directly synthesized on intracavity optical microresonators for GHz repetition rate mode-locked lasers40
Multiphase superconductivity at the interface between ultrathin FeTe islands and Bi2Te340
Homoepitaxial growth of isotopically enriched h10BN layers on h11BN crystals by high-temperature molecular beam epitaxy39
Cathode wrapping strategy with metal chalcogenide nanosheet for safer and longer lasting Li-ion batteries39
Spin-order-dependent magneto-elastic coupling in two dimensional antiferromagnetic MnPSe3 observed through Raman spectroscopy38
Enhancing plasmonic superconductivity in layered materials via dynamical Coulomb engineering38
Gating monolayer and bilayer graphene with a two-dimensional semiconductor38
Designable exciton mixing through layer alignment in WS2-graphene heterostructures38
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