OOIR: Observatory of International Research

Papers

(The H4-Index of npj 2D Materials and Applications is 35. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)

Article	Citations
Prospects challenges and stability of 2D MXenes for clean energy conversion and storage applications	212
Recent advances of MXenes as electrocatalysts for hydrogen evolution reaction	178
Intercalation as a versatile tool for fabrication, property tuning, and phase transitions in 2D materials	145
2D boron nitride nanosheets for polymer composite materials	144
Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers	128
Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing	79
Synthesis of epitaxial monolayer Janus SPtSe	76
2D semiconductors for specific electronic applications: from device to system	76
Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces	73
Copper single-atoms embedded in 2D graphitic carbon nitride for the CO2 reduction	71
Giant persistent photoconductivity in monolayer MoS2 field-effect transistors	65
2D graphene oxide–aptamer conjugate materials for cancer diagnosis	64
Layer-dependent optical and dielectric properties of centimeter-scale PdSe2 films grown by chemical vapor deposition	61
Improving stability of organometallic-halide perovskite solar cells using exfoliation two-dimensional molybdenum chalcogenides	59
Origins of genuine Ohmic van der Waals contact between indium and MoS2	55
Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers	54
Deep learning model to predict fracture mechanisms of graphene	52
Excitons and light-emission in semiconducting MoSi2X4 two-dimensional materials	50
The resurrection of tellurium as an elemental two-dimensional semiconductor	49
Superlubricity under ultrahigh contact pressure enabled by partially oxidized black phosphorus nanosheets	49
All inkjet-printed electronics based on electrochemically exfoliated two-dimensional metal, semiconductor, and dielectric	49
Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe2	48
Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors	46
Efficient water desalination with graphene nanopores obtained using artificial intelligence	46
Ultra-broad spectral photo-response in FePS3 air-stable devices	46

In-plane anisotropic optical and mechanical properties of two-dimensional MoO3	46
2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects	45
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys	44
Direct observation of ferroelectricity in two-dimensional MoS2	44
Multilevel artificial electronic synaptic device of direct grown robust MoS2 based memristor array for in-memory deep neural network	43
Dual-phase MoS2/MXene/CNT ternary nanohybrids for efficient electrocatalytic hydrogen evolution	41
Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity	40
Chemical vapor deposition-grown nitrogen-doped graphene’s synthesis, characterization and applications	38
Boosting proximity spin–orbit coupling in graphene/WSe2 heterostructures via hydrostatic pressure	38
Gas-mediated liquid metal printing toward large-scale 2D semiconductors and ultraviolet photodetector	38
2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film	35
Atomically-thin single-photon sources for quantum communication	35