npj 2D Materials and Applications

Papers
(The H4-Index of npj 2D Materials and Applications is 33. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)
ArticleCitations
Experimental observation of spin−split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures255
Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors234
Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers186
Spatially controlled epitaxial growth of 2D heterostructures via defect engineering using a focused He ion beam149
Intrinsic bitunable magnetism/polarity behavior in 2D Janus Cr2I3Y3 (Y = F, Cl, or Br) systems109
Improved strain engineering of 2D materials by adamantane plasma polymer encapsulation87
Unveiling the complex structure-property correlation of defects in 2D materials based on high throughput datasets80
Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications65
Two dimensional V2O3 and its experimental feasibility as robust room-temperature magnetic Chern insulator63
Hybrid architecture based on two-dimensional memristor crossbar array and CMOS integrated circuit for edge computing62
Nanosheet fabrication from magnon thermal conductivity cuprates for the advanced thermal management61
Near-infrared to red-light emission and carrier dynamics in full series multilayer GaTe1−xSex (0≤x≤1) with structural evolution61
Thickness-dependent spin bistable transitions in single-crystalline molecular 2D material61
Effect of crystallinity and thickness on thermal transport in layered PtSe260
Twist-resilient and robust ferroelectric quantum spin Hall insulators driven by van der Waals interactions59
Exciton-polarons in the presence of strongly correlated electronic states in a MoSe2/WSe2 moiré superlattice59
Controlling surface porosity of graphene-based printed aerogels55
Phonon-assisted electronic states modulation of few-layer PdSe2 at terahertz frequencies54
Ambient effect on the Curie temperatures and magnetic domains in metallic two-dimensional magnets53
Layer-dependent Schottky contact at van der Waals interfaces: V-doped WSe2 on graphene53
Ionotronic WS2 memtransistors for 6-bit storage and neuromorphic adaptation at high temperature52
Magnetic tunnel junction based on bilayer LaI2 as perfect spin filter device52
High-throughput numerical modeling of the tunable synaptic behavior in 2D MoS2 memristive devices48
Foam with direction: unraveling the anisotropic radiation shielding properties of 2D boron nitride nanoplatelet foams47
Prolonged dephasing time of ensemble of moiré-trapped interlayer excitons in WSe2-MoSe2 heterobilayers45
Hometronics – accessible production of graphene suspensions for health sensing applications using only household items44
Mechanistic insights into the deformation and degradation of a 2D metal organic framework44
Single-material MoS2 thermoelectric junction enabled by substrate engineering41
Coulomb engineering of two-dimensional Mott materials39
Author Correction: Mechanically-tunable bandgap closing in 2D graphene phononic crystals38
Emerging topological multiferroics from the 2D Rice-Mele model37
Revisiting the origin of non-volatile resistive switching in MoS2 atomristor34
Interlayer angle control of the electronic mini-gaps, band splitting, and hybridization in graphene–WS2 moiré heterostructures34
Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs33
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