OOIR: Observatory of International Research

Papers

(The H4-Index of npj 2D Materials and Applications is 34. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-10-01 to 2025-10-01.)

Article	Citations
Nanosheet fabrication from magnon thermal conductivity cuprates for the advanced thermal management	149
Experimental and theoretical band alignment study of MPS3 (M = Mn, Fe, Co, Ni) for designing tailored 2D heterostructures	90
Multiferroic nematic d-wave altermagnetism driven by orbital-order on the honeycomb lattice	83
Transient photodoping and phonon dynamics in bulk and monolayer MoS2 by time resolved Raman scattering	81
Tuning of spin-transfer torque in VSe2-based vdW magnetic tunnel junctions by electrode polytypes	77
Piezoelectricity in NbOI2 for piezotronics and nanogenerators	77
Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications	75
Understanding and predicting trends in adsorption energetics on monolayer transition metal dichalcogenides	73
Exciton-polarons in the presence of strongly correlated electronic states in a MoSe2/WSe2 moiré superlattice	73
Quantifying stress distribution in ultra-large graphene drums through mode shape imaging	68
Photoluminescence enhancement in two-dimensional semiconductors via spacer-free metallic screening	67
Origin of contact polarity at metal-2D transition metal dichalcogenide interfaces	66
Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride	65
Advancements in 2D layered material memristors: unleashing their potential beyond memory	62
Exfoliation procedure-dependent optical properties of solution deposited MoS2 films	57
Atomistic description of conductive bridge formation in two-dimensional material based memristor	46
Multiphase superconductivity at the interface between ultrathin FeTe islands and Bi2Te3	46
High Chern number van der Waals magnetic topological multilayers MnBi2Te4/hBN	45
Single-atom catalytic growth of crystals using graphene as a case study	43
Non-planar graphene directly synthesized on intracavity optical microresonators for GHz repetition rate mode-locked lasers	43
Spin-order-dependent magneto-elastic coupling in two dimensional antiferromagnetic MnPSe3 observed through Raman spectroscopy	42
Ab initio elucidation of PTCDA intercalation mechanism in MoS2 bilayer	41
Impact ionization and the paradox of defects in transition metal dichalcogenide FETs	40
Multi-functional polymorphic memory based on 2D ferroelectric tunnel junctions	38
Programmable phonon-assisted resonant energy transfer between moiré cells in charge-tunable MoSe2-WS2 heterobilayers	38

Cathode wrapping strategy with metal chalcogenide nanosheet for safer and longer lasting Li-ion batteries	37
Bio-inspired “Self-denoising” capability of 2D materials incorporated optoelectronic synaptic array	37
Gating monolayer and bilayer graphene with a two-dimensional semiconductor	36
Designable exciton mixing through layer alignment in WS2-graphene heterostructures	36
Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition process	36
Dual-phase MoS2/MXene/CNT ternary nanohybrids for efficient electrocatalytic hydrogen evolution	35
Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study	35
Tunable anion transport and the chemical transistor effect in functionalized graphene oxide membranes	35
Advance in additive manufacturing of 2D materials at the atomic and close-to-atomic scale	34
Two-dimensional C20-based monolayers and heterostructures for photocatalytic overall water splitting	34
Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe2	34
Low T direct plasma assisted growth of graphene on sapphire and its integration in graphene/MoS2 heterostructure-based photodetectors	34
Bottom-up water-based solution synthesis for a large MoS2 atomic layer for thin-film transistor applications	34