OOIR: Observatory of International Research

Papers

(The H4-Index of Advanced Electronic Materials is 42. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)

Article	Citations
Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies	192
	172
Detection of Ice Formation With the Polymeric Mixed Ionic‐Electronic Conductor PEDOT: PSS for Aeronautics	138
Advanced Microfluidic‐Based Wearable Electrochemical Sensors for Continuous Biochemical Monitoring	129
High β‐phase Poly(vinylidene fluoride) Using a Thermally Decomposable Molecular Splint	111
Correlation between Transient Response and Neuromorphic Behavior in Organic Electrochemical Transistors	109
MBE‐Grown ScAlN‐on‐Si Films: Enhancing In‐Plane Crystallinity for Extensional Mode BAW Resonators	85
Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay	83
	81
Analog Hf_xZr_1‐xO₂ Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network (Adv. Electron. Mater. 4/2024)	76
	68
A Self‐Organizing Map Spiking Neural Network Based on Tin Oxide Memristive Synapses and Neurons	65
Unraveling the Mechanism of the Light‐Triggered Synaptic Plasticity in Organic Photoelectric Synaptic Transistors	65
A Near‐Zero Index Metamaterial Lens for Reduced Complexity and High‐Performance Active Electronically Scanned Arrays	65
GeTe/Sb₂Te₃ Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices	64
Weyl Fermion Manipulation Through Magnetic Transitions in the Ferromagnetic Non‐Centrosymmetric Weyl Semimetal PrAlSi	62
High‐Throughput Production of Electrically Conductive Yarn (E‐Yarn) for Smart Textiles	62
Prediction and Elucidation of Physical Properties of Polycrystalline Materials Using Multichannel Machine Learning of Electron Backscattering Diffraction	61
Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators	61
Poly(2‐vinylpyridine) as an Additive for Enhancing N‐Type Organic Thin‐Film Transistor Stability (Adv. Electron. Mater. 2/2024)	55
Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in β‐Ga₂O₃	53
Semiconductor Membrane Exfoliation: Technology and Application	52
Masthead: (Adv. Electron. Mater. 6/2022)	51
Unveiling the Impact of the Electrolyte's Counter Ions on Organic Electrochemical Transistor Performance	51
Masthead: (Adv. Electron. Mater. 10/2023)	50

Transfer of Micro‐LEDs with Roll‐Based Direct Overlay Alignment for Manufacturing Transparent Displays	50
A Molecular Precursor‐Based Copper Antimony Sulfide Photodetector with Enhanced Performance by Silver Doping	49
Ga₂O₃ Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio	48
A Deep Study of Resistance Switching Phenomena in TaO_x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification	48
Anomalous Elastic Evolution Induced by Copper Hopping in van der Waals Ferroelectric CuInP₂S₆	47
Masthead: (Adv. Electron. Mater. 12/2023)	46
Tunable Linearity of Weight Update in Low Voltage Synaptic Transistors with Periodic High‐k Laminates	45
Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al_0.7Sc_0.3N Film with Thickness down to 20 nm	45
The Contrasting Impacts of the Al₂O₃ and Y₂O₃ Insertion Layers on the Crystallization of ZrO₂ Films for Dynamic Random Access Memory Capacitors	45
Filamentary TaO_x/HfO₂ ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing	45
Investigation and Modeling of the Electrical Bias Stress in Electrolyte‐Gated Organic Transistors	44
Unique Features of Polarization in Ferroelectric Ionic Conductors	43
Electronic and Lattice Thermal Conductivity Switching by 3D−2D Crystal Structure Transition in Nonequilibrium (Pb₁₋_xSn_x)Se	43
High‐Performance Transparent Silicon Nanowire Thin Film Transistors Integrated on Glass Substrates via a Room Temperature Solution Passivation	42
Masthead: (Adv. Electron. Mater. 11/2021)	42
Composition‐Dependent Ferroelectricity of LuFeO₃ Orthoferrite Thin Films	42
	42