OOIR: Observatory of International Research

Papers

(The H4-Index of Advanced Electronic Materials is 43. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-05-01 to 2025-05-01.)

Article	Citations
Masthead: (Adv. Electron. Mater. 10/2023)	212
	171
Masthead: (Adv. Electron. Mater. 11/2021)	153
Influence of DC Bias on the Hysteresis, Loss, and Nonlinearity of Epitaxial PbZr_0.55Ti_0.45O₃ Films	142
Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials	137
Anomalous Elastic Evolution Induced by Copper Hopping in van der Waals Ferroelectric CuInP₂S₆	118
Tunable Linearity of Weight Update in Low Voltage Synaptic Transistors with Periodic High‐k Laminates	109
Filamentary TaO_x/HfO₂ ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing	94
	86
	84
Investigation and Modeling of the Electrical Bias Stress in Electrolyte‐Gated Organic Transistors	84
Prediction and Elucidation of Physical Properties of Polycrystalline Materials Using Multichannel Machine Learning of Electron Backscattering Diffraction	79
Masthead: (Adv. Electron. Mater. 12/2023)	78
Masthead: (Adv. Electron. Mater. 6/2022)	73
Analog Hf_xZr_1‐xO₂ Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network (Adv. Electron. Mater. 4/2024)	70
Electronic and Lattice Thermal Conductivity Switching by 3D−2D Crystal Structure Transition in Nonequilibrium (Pb₁₋_xSn_x)Se	67
Unique Features of Polarization in Ferroelectric Ionic Conductors	67
Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applications	64
Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay	64
Poly(2‐vinylpyridine) as an Additive for Enhancing N‐Type Organic Thin‐Film Transistor Stability (Adv. Electron. Mater. 2/2024)	60
Sustainable Soft Electronics Combining Recyclable Metal Nanowire Circuits and Biodegradable Gel Film Substrates	59
Improvement of Synaptic Properties in Oxygen‐Based Synaptic Transistors Due to the Accelerated Ion Migration in Sub‐Stoichiometric Channels	59
Semiconductor Membrane Exfoliation: Technology and Application	59
The Contrasting Impacts of the Al₂O₃ and Y₂O₃ Insertion Layers on the Crystallization of ZrO₂ Films for Dynamic Random Access Memory Capacitors	58
A Near‐Zero Index Metamaterial Lens for Reduced Complexity and High‐Performance Active Electronically Scanned Arrays	55

A Deep Study of Resistance Switching Phenomena in TaO_x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification	55
High‐Throughput Production of Electrically Conductive Yarn (E‐Yarn) for Smart Textiles	54
Wireless Technologies for Wearable Electronics: A Review	53
A Molecular Precursor‐Based Copper Antimony Sulfide Photodetector with Enhanced Performance by Silver Doping	51
	51
Advanced Microfluidic‐Based Wearable Electrochemical Sensors for Continuous Biochemical Monitoring	50
Oxygen Doping in Ferroelectric Wurtzite‐type Al_0.73Sc_0.27N: Improved Leakage and Polarity Control	47
High‐Performance Transparent Silicon Nanowire Thin Film Transistors Integrated on Glass Substrates via a Room Temperature Solution Passivation	46
Analog and Digital Mode α‐In₂Se₃ Memristive Devices for Neuromorphic and Memory Applications	46
Composition‐Dependent Ferroelectricity of LuFeO₃ Orthoferrite Thin Films	45
GeTe/Sb₂Te₃ Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices	45
Unraveling the Mechanism of the Light‐Triggered Synaptic Plasticity in Organic Photoelectric Synaptic Transistors	45
Investigation of Optimum Deposition Conditions of Radio Frequency Reactive Magnetron Sputtering of Al_0.7Sc_0.3N Film with Thickness down to 20 nm	45
A Self‐Organizing Map Spiking Neural Network Based on Tin Oxide Memristive Synapses and Neurons	45
Correlation between Transient Response and Neuromorphic Behavior in Organic Electrochemical Transistors	44
2D MoTe₂/MoS_2−xO_x Van der Waals Heterostructure for Bimodal Neuromorphic Optoelectronic Computing	44
Optoelectronic Resistive Memory Based on Lead‐Free Cs₂AgBiBr₆ Double Perovskite for Artificial Self‐Storage Visual Sensors	43
Unveiling the Impact of the Electrolyte's Counter Ions on Organic Electrochemical Transistor Performance	43