Advanced Electronic Materials

Papers
(The H4-Index of Advanced Electronic Materials is 43. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-12-01 to 2025-12-01.)
ArticleCitations
Masthead: (Adv. Electron. Mater. 6/2022)197
177
Anomalous Elastic Evolution Induced by Copper Hopping in van der Waals Ferroelectric CuInP2S6151
Masthead: (Adv. Electron. Mater. 12/2023)133
Poly(2‐vinylpyridine) as an Additive for Enhancing N‐Type Organic Thin‐Film Transistor Stability (Adv. Electron. Mater. 2/2024)114
Prediction and Elucidation of Physical Properties of Polycrystalline Materials Using Multichannel Machine Learning of Electron Backscattering Diffraction110
Weyl Fermion Manipulation Through Magnetic Transitions in the Ferromagnetic Non‐Centrosymmetric Weyl Semimetal PrAlSi89
86
Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators86
Analog HfxZr1‐xO2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network (Adv. Electron. Mater. 4/2024)83
High‐Throughput Production of Electrically Conductive Yarn (E‐Yarn) for Smart Textiles68
A Near‐Zero Index Metamaterial Lens for Reduced Complexity and High‐Performance Active Electronically Scanned Arrays67
A Self‐Organizing Map Spiking Neural Network Based on Tin Oxide Memristive Synapses and Neurons66
Unraveling the Mechanism of the Light‐Triggered Synaptic Plasticity in Organic Photoelectric Synaptic Transistors65
High‐Performance Transparent Silicon Nanowire Thin Film Transistors Integrated on Glass Substrates via a Room Temperature Solution Passivation64
64
62
Masthead: (Adv. Electron. Mater. 10/2023)62
Correlation between Transient Response and Neuromorphic Behavior in Organic Electrochemical Transistors61
Three‐Terminal Memristor with Tunable Volatility and Set Voltage59
MBE‐Grown ScAlN‐on‐Si Films: Enhancing In‐Plane Crystallinity for Extensional Mode BAW Resonators56
Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies55
Sustainable Soft Electronics Combining Recyclable Metal Nanowire Circuits and Biodegradable Gel Film Substrates51
Investigation and Modeling of the Electrical Bias Stress in Electrolyte‐Gated Organic Transistors51
Detection of Ice Formation With the Polymeric Mixed Ionic‐Electronic Conductor PEDOT: PSS for Aeronautics51
2D MoTe2/MoS2−xOx Van der Waals Heterostructure for Bimodal Neuromorphic Optoelectronic Computing51
Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay51
The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors50
High β‐phase Poly(vinylidene fluoride) Using a Thermally Decomposable Molecular Splint49
Unveiling the Impact of the Electrolyte's Counter Ions on Organic Electrochemical Transistor Performance49
Composition‐Dependent Ferroelectricity of LuFeO3 Orthoferrite Thin Films47
Unique Features of Polarization in Ferroelectric Ionic Conductors47
Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in β‐Ga2O347
Transfer of Micro‐LEDs with Roll‐Based Direct Overlay Alignment for Manufacturing Transparent Displays47
Semiconductor Membrane Exfoliation: Technology and Application46
46
Ga2O3 Schottky Avalanche Solar‐Blind Photodiode with High Responsivity and Photo‐to‐Dark Current Ratio45
Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing44
Tunable Linearity of Weight Update in Low Voltage Synaptic Transistors with Periodic High‐k Laminates44
Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applications43
Oxygen Doping in Ferroelectric Wurtzite‐type Al0.73Sc0.27N: Improved Leakage and Polarity Control43
Electronic and Lattice Thermal Conductivity Switching by 3D−2D Crystal Structure Transition in Nonequilibrium (Pb1−xSnx)Se43
Emulating Nociceptive Receptor and LIF Neuron Behavior via ZrOx‐based Threshold Switching Memristor43
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