OOIR: Observatory of International Research

Papers

(The TQCC of IEEE Journal of the Electron Devices Society is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)

Article	Citations
Trap Analysis of Normally-Off Ga₂O₃ MOSFET Enabled by Charge Trapping Layer: Photon Stimulated Characterization and TDDB	40
A New 13T4C LTPO MicroLED Pixel Circuit Producing Highly Stable Driving Current by Minimizing Effect of Parasitic Capacitors and Stabilizing Capacitor Nodes	31
Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination	31
Piston-Mode pMUT With Mass Load	29
A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction	26
AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism	26
Significance of Overdrive Voltage in the Analysis of Short-Channel Behaviors of n-FinFET Devices	22
Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si	20
Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs	18
Special Section on ESSDERC 2021	18
High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss	16
SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology	16
The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs	15
The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs	15
A Retina-Inspired Image Sensor Array Based on Randomly-Accessible Active Pixel Sensor	14
Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs	14
Demonstration of HfO₂-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si_0.8Ge_0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger	14
Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform	14
Guest Editorial Special Section on EDTM 2022	13
Hybrid Soldering 2.3D Assembly With High Reliability and Low Cost	13
Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Co	13
Performance Enhancement of Asymmetrical Double Gate Junctionless CMOS Inverter With 3-nm Critical Feature Size Using Charge Sheet	13
Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al₂O₃/GeO_x Gate Stacks	11
Study on Flake Graphite Cathode Surface Microstructure in Relativistic Magnetrons	11
Observation and Modeling of Near-Bistable Dark-Mode Current-Voltage Characteristics in Semi-Insulating Gallium Arsenide With Implications for Photoconductors	11

Ultrafast I_D – V_G Technique for Reliable Cryogenic Device Characterization	11
Bit Depth of Drivers for Micro-LED Displays Adopting Low-Temperature Polysilicon Oxide Thin-Film Transistors	11
Pelgrom-Based Predictive Model to Estimate Metal Grain Granularity and Line Edge Roughness in Advanced Multigate MOSFETs	11
A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding	11
High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs	10
Small-Signal and Large-Signal RF Characterization and Modeling of Low and High Voltage FinFETs for 14/16 nm Technology Node SoCs	10
Monolithically Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing	10
Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides	10
Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions	10
Impact of Underlying Insulators on the Crystallinity and Antisite Defect Formation in PVD-MoS2 Films	9
Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress	9
Investigation of Electrical Property and Thermal Stability in Enhancement-Mode In_xAl_1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiO_x Gate and Fluorine Treatment	9
Cryogenic Small Dimension Effects and Design-Oriented Scalable Compact Modeling of a 65-nm CMOS Technology	9
Combining Intelligence With Rules for Device Modeling: Approximating the Behavior of AlGaN/GaN HEMTs Using a Hybrid Neural Network and Fuzzy Logic Inference System	9
Tungsten Trioxide Nanoparticles Modified Cuprous Oxide Film Non-Enzymatic Dopamine Sensor	9
Fermi-Level Splitting-Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector	9
Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs	9
Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors	9
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module	9
Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models	9
The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs	8
Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer	8
Enhancing Resistive Switching Characteristics of MoS2-based Memristor through O2 Plasma Irradiation-Induced Defects	8
Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension	8
Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection	8
High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode	8
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor	8
Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETs	8
Exploring BEOL-Compatible Ferroelectricity in Ultra-Thin Hafnium Zirconium Oxide: Thermal Budget, FTJ Characteristics, and Device Reliability	8
High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications	8
Foreword Special Issue on the 5th Latin American Electron Device Conference	8
Experimental Verification of PCH-EM Algorithm for Characterizing DSERN Image Sensors	7
Low-Power a-IGZO TFT Emission Driver With Shoot-Through Current-Free QB Control Block	7
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM	7
Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs	7
An On-Chip Filter Using Near-End Cross-Coupling With Jigsaw Puzzle Shaped Resonators	7
Scaling Properties of Ru, Rh, and Ir for Future Generation Metallization	7
Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications	7
Golden List of Reviewers for 2022	7
Capacitively Coupled Near-Threshold Biasing: Low-Power Design Based on Metal Oxide TFTs for IoT Applications	7
Analysis of Standard-MOS and Ultra-Low-Power Diodes Composed by SOI UTBB Transistors	7
Wide Bandwidth Frequency Tripler Based on Composite Right/Left-Handed Transmission Lines with Embedded Back-to-Back Schottky Diodes	7
IEEE ELECTRON DEVICES SOCIETY	7
Effect of Layout on TDDB in 45-nm PDSOI N-Channel FETs Under DC and AC Stress	7
2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface	7
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs	7
Leakage Current Behavior in HfO₂/SiO₂/Al₂O₃ Stacked Dielectric on 4H-SiC Substrate	6
Thermal Characteristics Enhancement of Drain-Extended FinFETs for System on Chip Applications With Dual High-k Field Plates	6
Graphene–Silicon Diode for 2-D Heterostructure Electrical Failure Protection	6
A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance	6

Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications	6
Ga2O3-Graphene Hybrid Structure for Near-Infrared Metasurface Absorber	6
-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter	6
Machine Learning-Assisted Device Modeling With Process Variations for Advanced Technology	6
A Compact Amorphous In-Ga-Zn-Oxide Thin Film Transistor Pixel Circuit With Two Capacitors for Active Matrix Micro Light-Emitting Diode Displays	6
AI-Assisted Design of Drain-Extended FinFET With Stepped Field Plate for Multi-Purpose Applications	6
High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates	6
Insights Into Design Optimization of Negative Capacitance Complementary-FET (CFET)	6
High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile	6
Advanced Microfluidic Biofuel Cells Using Gold and Silver Leaf on Paper and PDMS Substrates: Toward Implantable Energy Solution	6
Enhancement of Near-Infrared Sensitivity in Silicon-Based Image Sensors to Oblique Chief Rays via Quasi-Surface Plasmon Resonance	6
I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe₂/MoS₂ Heterojunction Diode at Cryogenic Temperatures	6
The Endurance and Reliability Mechanisms Investigation of InGaZnO and InSnO Thin Film Transistors	6
Self-Aligned Staggered Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors With Ultra-Low Contact Resistance for High-Speed Circuits Application	6
Special Issue on Bridging the Data Gap in Photovoltaics with Synthetic Data Generation	5
One-Time Programmable Memory for Ultra-Low Power ANN Inference Accelerator With Security Against Thermal Fault Injection	5
Electrical and 850 nm Optical Characterization of Back-Gate Controlled 22 nm FDSOI PIN-Diodes Without Front-Gate	5
Fast and Expandable ANN-Based Compact Model and Parameter Extraction for Emerging Transistors	5
Expediting Manufacturing Launch Using Integrated Data With AI/ML Analytic Solutions	5
Study of Enhanced Ferromagnetic Behavior of Mn-Doped 2D Janus Cr2S2I2 Monolayer	5
Golden List of Reviewers for 2024	5
Charge-Based Compact Modeling of OECTs for Neuromorphic Applications	5
Semiconductor Device Modeling for Circuit and System Design	5
Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor of Peripheral-Under-Cell (PUC) NAND Flash Memory	5
Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs	5
Global Shutter and Charge Binning With Quantum Dots Photodiode Arrays for NIR Imaging	5
Investigation of DC and Low-Frequency Noise performance in GaN-on-Si Power MIS-HEMTs Over a Temperature Range of 4 K to 420 K	5
The Implementation of a High-Performance Glucose Biosensor Based on Differential EGFET and Chopper Amplifier	5
Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz	5
An a-IGZO TFT-Based AMOLED Pixel Circuit Employing Stable Mobility Compensation Suppressing Degradation of Detected V_TH	5
Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications	5
A Highly Robust Integrated Gate Driver Based on Organic TFTs for Active-Matrix Displays	5
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability	5
Editorial	4
Scaling Design Effects on Surface Buffer IGBT Characteristics	4
A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET	4
Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application	4
Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode	4
O₂ and H₂O Barrier-Based High Reliability and Stability Using Polytetrafluoroethylene Passivation Layer for Solution Processed Indium Oxide Thin Film Transistors	4
Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements	4
Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells	4
Flash Memory and Its Manufacturing Technology for Sustainable World	4
Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias	4
Multilayer Crossbar Array of Amorphous Metal-Oxide Semiconductor Thin Films for Neuromorphic Systems	4
Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT	4
Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing	4
Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges	4
BEOL Process Effects on ePCM Reliability	4
Table of Contents	4
Analog Read Noise and Quantizer Threshold Estimation From Quanta Image Sensor Bit Density	4
Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators	4
Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications	4
Achieving High-Performance Solution-Processed Thin-Film Transistors by Doping Strong Reducibility Element Into Indium-Zinc-Oxide	4
Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric	4
InAlN/GaN HEMT With n⁺GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications	4
Area-Efficient Power-Rail ESD Clamp Circuit With False-Trigger Immunity in 28nm CMOS Process	4
Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga₂O₃	4