IEEE Journal of the Electron Devices Society

Article	Citations
First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz	36
Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs	33
Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches	30
Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation	26
Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures	26
Compact Millimeter-Wave On-Chip Dual-Band Bandpass Filter in 0.15-μm GaAs Technology	25
Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs	24
1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline	24
READ-Optimized 28nm HKMG Multibit FeFET Synapses for Inference-Engine Applications	21
Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET	18
Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering	18
Electrolyte-Gated Field Effect Transistors in Biological Sensing: A Survey of Electrolytes	17
A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode	17
Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications	17
1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V	17
Ultrathin Sub-5-nm Hf₁₋ₓZrₓO₂ for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate	16
AM PWM Driving Circuit for Mini-LED Backlight in Liquid Crystal Displays	16
Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node	16
1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2Bi-Layer Passivation at 2 GHz	15
An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs	15
Aqueous Solution Derived Amorphous Indium Doped Gallium Oxide Thin-Film Transistors	14
Work-Function Fluctuation of Gate-All-Around Silicon Nanowire n-MOSFETs: A Unified Comparison Between Cuboid and Voronoi Methods	14
Efficient and Optimized Methods for Alleviating the Impacts of IR-Drop and Fault in RRAM Based Neural Computing Systems	14
A Low Power and IR Drop Compensable AMOLED Pixel Circuit Based on Low-Temperature Poly-Si and Oxide (LTPO) TFTs Hybrid Technology	13
GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution	13

A 1200-V-Class Ultra-Low Specific On-Resistance SiC Lateral MOSFET With Double Trench Gate and VLD Technique	13
On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs	12
Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection	12
Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study	12
Modeling and Design of FTJs as Multi-Level Low Energy Memristors for Neuromorphic Computing	12
Light-Controlled Gap-Type TFT Used for Large-Area Under-Screen Fingerprint Sensor	12
Characteristics of Field-Emission Emitters Based On Graphene Decorated ZnO Nanostructures	12
Low-Temperature Solution-Processed All Organic Integration for Large-Area and Flexible High-Resolution Imaging	12
Comprehensive Investigation and Comparative Analysis of Machine Learning-Based Small-Signal Modelling Techniques for GaN HEMTs	12
GaN MSM UV Detectors With Different Electrode Materials	11
High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module	11
Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress	11
Core-Shell Dual-Gate Nanowire Memory as a Synaptic Device for Neuromorphic Application	11
High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 °C	11
Abnormal Bias Instabilities Induced by Lateral H2O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors	11
Determining the Electrical Charging Speed Limit of ReRAM Devices	11
Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors	11
Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors	11
Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation	10
Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications	10
Design and Simulation of Near-Terahertz GaN Photoconductive Switches–Operation in the Negative Differential Mobility Regime and Pulse Compression	10
4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications	10
A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction	10
A Novel Real-Time TFT Threshold Voltage Compensation Method for AM-OLED Using Double Sampling of Source Node Voltage	10
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation	10
Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing	10
Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications	9
Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model	9
Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors	9
Complementary-Like Inverter Based on Organic-Inorganic Heterojunction Ambipolar Transistors on Flexible Substrate	9
On the Challenges of Reliable Threshold Voltage Measurement in Ohmic and Schottky Gate p-GaN HEMTs	9
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer	9
Non-Pad-Based in Situ In-Operando CDM ESD Protection Using Internally Distributed Network	9
Fast and Expandable ANN-Based Compact Model and Parameter Extraction for Emerging Transistors	9
Junction Design and Complementary Capacitance Matching for NCFET CMOS Logic	9
Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs	9
A Zero-Cost Technique to Improve ON-State Performance and Reliability of Power LDMOS Transistors	8
BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions	8
Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter	8
A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band	8
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights	8
Size Effects of Poly-Si Formed by Laser Annealing With Periodic Intensity Distribution on the TFT Characteristics	8
Electron Conduction Channel of Silver Nanowire Modified TiO₂ Photoanode for Improvement of Interface Impedance of Dye-Sensitized Solar Cell	8
Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer	8
A Study of ESD-mmWave-Switch Co-Design of 28GHz Distributed Travelling Wave Switch in 22nm FDSOI for 5G Systems	8
Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si	8
Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O₂ Thickness Scaling	8
Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions	8
New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs	8
AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism	8

ESD Design Verification Aided by Mixed-Mode Multiple-Stimuli ESD Simulation	7
Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors	7
Pd Nanoparticle Adsorption ZnO Nanorods for Enhancing Photodetector UV-Sensing Performance	7
Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability	7
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures	7
AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate	7
Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions	7
Quenching Statistics of Silicon Single Photon Avalanche Diodes	7
On the Critical Role of Ferroelectric Thickness for Negative Capacitance Device-Circuit Interaction	6
Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination	6
Graded Crystalline HfO₂ Gate Dielectric Layer for High-k/Ge MOS Gate Stack	6
Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor With Source/Drain Regions Doped by Al Reaction	6
Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories	6
Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness	6
Two-Dimensional Transient Temperature Distribution Measurement of GaN Light-Emitting Diode Using High Speed Camera	6
Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell	6
Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs	6
Low-Resistive Source/Drain Formation Using Nitrogen Plasma Treatment in Self-Aligned In-Ga-Zn-Sn-O Thin-Film Transistors	6
Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer	6
High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb	6
Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode	6
Area and Thickness Scaling of NbOₓ-Based Threshold Switches for Oscillation Neurons	6
Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs	6
An Integrator and Schmitt Trigger Based Voltage-to-Frequency Converter Using Unipolar Metal-Oxide Thin Film Transistors	6
An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier	5
Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash	5
Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric	5
Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators	5
Graphene–Silicon Diode for 2-D Heterostructure Electrical Failure Protection	5
Simultaneous Analysis of Multi-Variables Effect on the Performance of Multi-Domain MFIS Negative Capacitance Field-Effect Transistors	5
Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review	5
Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature	5
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices	5
2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data	5
Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs	5
Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process	5
SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology	5
Two-Dimensional Inverters Based on MoS₂-hBN-Graphene Heterostructures Enabled by a Layer-by-Layer Dry-Transfer Method	5
A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs	5
Formation Mechanism of Rounded SiGe-Etch Front in Isotropic SiGe Plasma Etching for Gate-All-Around FETs	5
Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window	5
A Common Drain Operational Amplifier Using Positive Feedback Integrated by Metal-Oxide TFTs	5
Analog Read Noise and Quantizer Threshold Estimation From Quanta Image Sensor Bit Density	5
-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter	5
Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits	5
Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications	5
Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT	4
Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model	4
A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode	4
Cryogenic CMOS RF Device Modeling for Scalable Quantum Computer Design	4
Gray Wolf Optimization-Based Modeling Technique Applied to GaN High Mobility Electron Transistors	4
Improving the Drift Effect and Hysteresis Effect of Urea Biosensor Based on Graphene Oxide/Nickel Oxide Sensing Film Modified Either by Au Nanoparticles or γ-Fe₂O₃ Nanoparticles Using Back-End	4
Ferroelectric-Like Non-Volatile FET With Amorphous Gate Insulator for Supervised Learning Applications	4
Real-Time Switching Dynamics in STT-MRAM	4
Characterization of 22 nm FDSOI nMOSFETs With Different Backplane Doping at Cryogenic Temperature	4
Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization	4
Microstructure and Granularity Effects in Electromigration	4
No-Snapback LDMOS Using Adaptive RESURF and Hybrid Source for Ideal SOA	4
Improved Perovskite Solar Cell Performance by High Growth Rate Spatial Atomic Layer Deposited Titanium Oxide Compact Layer	4
Characterization and Modeling of Quantum Dot Behavior in FDSOI Devices	4
Optimum Functionalization of Si Nanowire FET for Electrical Detection of DNA Hybridization	4
Low-Temperature Packaging of Ion-Sensitive Organic Field-Effect Transistors on Plastic for Multiple Ion Detection	4
Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model	4
Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack	4
Low Loss and Low EMI Noise CSTBT With Split Gate and Recessed Emitter Trench	4
Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode	4
A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing	4
High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode	4
The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures	4
A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding	4
Graphitic Carbon Nitride (g-C₃N₄)/Al₂O₃ Heterostructure as Double Dielectric: A Comparative Study in MIS Based on a-IGZO	4
The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs	4
Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature	4
Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters	4
Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons	4
Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT	4
Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier	4
Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse	4
Liquid Metal-Based Microfluidic Metasurface for Controllable Electromagnetic Wave Reflection Attenuation	4
Statistical Study of Degradation of Flexible Poly-Si TFTs Under Dynamic Bending Stress	4

Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model	4
Notice of Removal: Exceptionally Linear and Highly Sensitive Photo-Induced Unipolar Inverter Device	4
High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates	4
Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated Diodes	4
Impact of Die Carrier on Reliability of Power LEDs	4
Germanium Spherical Quantum-Dot Single-Hole Transistors With Self-Organized Tunnel Barriers and Self-Aligned Electrodes	4
Analysis of Transfer Gate Doping Profile Influence on Dark Current and FWC in CMOS Image Sensors	4
Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode	4
Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N2O Plasma Treatment Followed by High Temperature Annealing in N2 Ambience	4