IEEE Journal of the Electron Devices Society

Papers
(The median citation count of IEEE Journal of the Electron Devices Society is 2. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)
ArticleCitations
First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz45
Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs38
Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures37
Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation36
1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline35
Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches34
Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs30
Compact Millimeter-Wave On-Chip Dual-Band Bandpass Filter in 0.15-μm GaAs Technology28
READ-Optimized 28nm HKMG Multibit FeFET Synapses for Inference-Engine Applications24
A Low Power and IR Drop Compensable AMOLED Pixel Circuit Based on Low-Temperature Poly-Si and Oxide (LTPO) TFTs Hybrid Technology23
Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications22
Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering21
Electrolyte-Gated Field Effect Transistors in Biological Sensing: A Survey of Electrolytes20
Aqueous Solution Derived Amorphous Indium Doped Gallium Oxide Thin-Film Transistors20
AM PWM Driving Circuit for Mini-LED Backlight in Liquid Crystal Displays20
Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET19
A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode18
1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V18
Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node18
Balanced Performance Merit on Wind and Solar Energy Contact With Clean Environment Enrichment18
Efficient and Optimized Methods for Alleviating the Impacts of IR-Drop and Fault in RRAM Based Neural Computing Systems18
1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2Bi-Layer Passivation at 2 GHz17
An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs17
Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors17
On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs16
A 1200-V-Class Ultra-Low Specific On-Resistance SiC Lateral MOSFET With Double Trench Gate and VLD Technique16
Ultrathin Sub-5-nm Hf₁₋ZrO₂ for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate16
Work-Function Fluctuation of Gate-All-Around Silicon Nanowire n-MOSFETs: A Unified Comparison Between Cuboid and Voronoi Methods15
Comprehensive Investigation and Comparative Analysis of Machine Learning-Based Small-Signal Modelling Techniques for GaN HEMTs15
Modeling and Design of FTJs as Multi-Level Low Energy Memristors for Neuromorphic Computing14
Characteristics of Field-Emission Emitters Based On Graphene Decorated ZnO Nanostructures14
AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate14
Light-Controlled Gap-Type TFT Used for Large-Area Under-Screen Fingerprint Sensor14
High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module14
GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution14
Core-Shell Dual-Gate Nanowire Memory as a Synaptic Device for Neuromorphic Application13
Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter13
Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors13
Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection13
Determining the Electrical Charging Speed Limit of ReRAM Devices12
High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 °C12
Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress12
Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer12
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation12
Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O₂ Thickness Scaling12
Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors12
4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications12
Fast and Expandable ANN-Based Compact Model and Parameter Extraction for Emerging Transistors12
AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism12
GaN MSM UV Detectors With Different Electrode Materials12
Low-Temperature Solution-Processed All Organic Integration for Large-Area and Flexible High-Resolution Imaging12
Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study12
Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation12
Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions11
Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions11
Abnormal Bias Instabilities Induced by Lateral H2O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors11
A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction11
A Novel Real-Time TFT Threshold Voltage Compensation Method for AM-OLED Using Double Sampling of Source Node Voltage11
BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions11
Non-Pad-Based in Situ In-Operando CDM ESD Protection Using Internally Distributed Network11
Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination11
Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing11
Electron Conduction Channel of Silver Nanowire Modified TiO₂ Photoanode for Improvement of Interface Impedance of Dye-Sensitized Solar Cell11
Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs11
On the Challenges of Reliable Threshold Voltage Measurement in Ohmic and Schottky Gate p-GaN HEMTs11
Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si11
Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications11
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer11
A Zero-Cost Technique to Improve ON-State Performance and Reliability of Power LDMOS Transistors10
Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash10
Junction Design and Complementary Capacitance Matching for NCFET CMOS Logic10
Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT10
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights10
Design and Simulation of Near-Terahertz GaN Photoconductive Switches–Operation in the Negative Differential Mobility Regime and Pulse Compression10
Complementary-Like Inverter Based on Organic-Inorganic Heterojunction Ambipolar Transistors on Flexible Substrate10
Size Effects of Poly-Si Formed by Laser Annealing With Periodic Intensity Distribution on the TFT Characteristics9
Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack9
Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model9
Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode9
Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer9
ESD Design Verification Aided by Mixed-Mode Multiple-Stimuli ESD Simulation9
Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits9
Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications9
Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window8
Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors8
High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode8
A Study of ESD-mmWave-Switch Co-Design of 28GHz Distributed Travelling Wave Switch in 22nm FDSOI for 5G Systems8
Graded Crystalline HfO₂ Gate Dielectric Layer for High-k/Ge MOS Gate Stack8
Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications8
Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness8
New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs8
A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band8
The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs8
SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology8
Pd Nanoparticle Adsorption ZnO Nanorods for Enhancing Photodetector UV-Sensing Performance8
An Effective Approach for Extracting the Parameters of Solar PV Models Using the Chaotic War Strategy Optimization Algorithm With Modified Newton Rapson Method8
Quenching Statistics of Silicon Single Photon Avalanche Diodes8
Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model8
Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process8
Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor With Source/Drain Regions Doped by Al Reaction8
Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories8
24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN x Layer7
Germanium Spherical Quantum-Dot Single-Hole Transistors With Self-Organized Tunnel Barriers and Self-Aligned Electrodes7
Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs7
Low-Resistive Source/Drain Formation Using Nitrogen Plasma Treatment in Self-Aligned In-Ga-Zn-Sn-O Thin-Film Transistors7
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures7
A Compact Amorphous In-Ga-Zn-Oxide Thin Film Transistor Pixel Circuit With Two Capacitors for Active Matrix Micro Light-Emitting Diode Displays7
Low Loss and Low EMI Noise CSTBT With Split Gate and Recessed Emitter Trench7
Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability7
Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O27
Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons7
A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET7
Two-Dimensional Transient Temperature Distribution Measurement of GaN Light-Emitting Diode Using High Speed Camera7
High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates7
Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell7
Improving the Drift Effect and Hysteresis Effect of Urea Biosensor Based on Graphene Oxide/Nickel Oxide Sensing Film Modified Either by Au Nanoparticles or γ-Fe₂O₃ Nanoparticles Using Back-End 7
Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs7
A Flexible Printed Circuit Board-Based ZnO Enzymatic Uric Acid Potentiometric Biosensor Measurement and Characterization7
An Integrator and Schmitt Trigger Based Voltage-to-Frequency Converter Using Unipolar Metal-Oxide Thin Film Transistors7
Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques7
A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding7
On the Critical Role of Ferroelectric Thickness for Negative Capacitance Device-Circuit Interaction6
High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb6
A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile6
Development and Challenges of Reliability Modeling From Transistors to Circuits6
Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature6
LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification6
Formation Mechanism of Rounded SiGe-Etch Front in Isotropic SiGe Plasma Etching for Gate-All-Around FETs6
Cryogenic CMOS RF Device Modeling for Scalable Quantum Computer Design6
High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film6
Analog Read Noise and Quantizer Threshold Estimation From Quanta Image Sensor Bit Density6
-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter 6
Two-Dimensional Inverters Based on MoS₂-hBN-Graphene Heterostructures Enabled by a Layer-by-Layer Dry-Transfer Method6
Statistical Study of Degradation of Flexible Poly-Si TFTs Under Dynamic Bending Stress6
Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review6
Area and Thickness Scaling of NbOₓ-Based Threshold Switches for Oscillation Neurons6
Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer6
Analog PWM Method With Sweep Generation Structure Based on P-Type LTPS TFTs for Micro-LED Displays6
2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data6
Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs6
Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric 6
Microstructure and Granularity Effects in Electromigration6
Real-Time Switching Dynamics in STT-MRAM6
Temperature-Dependent Narrow Width Effects of 28-nm CMOS Transistors for Cold Electronics6
A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs6
Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control6
Characterization and Modeling of Quantum Dot Behavior in FDSOI Devices6
Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse6
Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode6
Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators6
Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness5
The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs5
Graphene–Silicon Diode for 2-D Heterostructure Electrical Failure Protection5
Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application5
No-Snapback LDMOS Using Adaptive RESURF and Hybrid Source for Ideal SOA5
An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier5
Liquid Metal-Based Microfluidic Metasurface for Controllable Electromagnetic Wave Reflection Attenuation5
Explore Luminance Attenuation and Optical Crosstalk of RGB Mini Light-Emitting Diode via Microscopic Hyperspectral Imaging5
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices5
Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures5
A Common Drain Operational Amplifier Using Positive Feedback Integrated by Metal-Oxide TFTs5
Characterization of 22 nm FDSOI nMOSFETs With Different Backplane Doping at Cryogenic Temperature5
A New IR-Drop Model That Improves Effectively the Brightness Uniformity of an AMOLED Panel5
Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization5
Performance Improvement by Double-Layer a-IGZO TFTs With a Top Barrier5
Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N2O Plasma Treatment Followed by High Temperature Annealing in N2 Ambience5
Simultaneous Analysis of Multi-Variables Effect on the Performance of Multi-Domain MFIS Negative Capacitance Field-Effect Transistors5
A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode5
Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM5
Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3rd Quadrant Operation5
Highly Sensitive Piezoresistive Sensors Based on a Voltage Divider Circuit With TFTs for Ultra-Low Pressure Detection5
Analysis of Transfer Gate Doping Profile Influence on Dark Current and FWC in CMOS Image Sensors5
Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs5
A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing5
Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic5
Optimum Functionalization of Si Nanowire FET for Electrical Detection of DNA Hybridization5
Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters5
Active-Matrix Digital Microfluidics Design and Optimization for High-Throughput Droplets Manipulation5
Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model5
Statistical Analysis of Random Telegraph Noises of MOSFET Subthreshold Currents Using a 1M Array Test Chip in a 40 nm Process5
Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model5
Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode4
Improved Electrical Performance of In₂O₃ Thin-Film Transistor by UV/Ozone Treatment4
Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT4
Low-Temperature Packaging of Ion-Sensitive Organic Field-Effect Transistors on Plastic for Multiple Ion Detection4
Flash Memory and Its Manufacturing Technology for Sustainable World4
Ferroelectric-Like Non-Volatile FET With Amorphous Gate Insulator for Supervised Learning Applications4
Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate4
Improved Symmetry of Ferroelectric Switching in HZO Based MFM Capacitors Enabled by High Pressure Annealing4
Noise-Based Simulation Technique for Circuit-Variability Analysis4
Using Self-Heating Resistors as a Case Study for Memristor Compact Modeling4
Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated Diodes4
Solution-Processed Small Molecule Inverted Solar Cells: Impact of Electron Transport Layers4
Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature4
Investigation of Re-Program Scheme in Charge Trap-Based 3D NAND Flash Memory4
High Temperature Reverse Bias (HTRB) & Temperature Humidity Bias (THB) Reliability Failure Mechanisms and Improvements in Trench Power MOSFET and IGBT4
Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier4
Gray Wolf Optimization-Based Modeling Technique Applied to GaN High Mobility Electron Transistors4
Capacitor Reused Gate Driver for Compact In-Cell Touch Displays4
High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss4
Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates4
Notice of Removal: Exceptionally Linear and Highly Sensitive Photo-Induced Unipolar Inverter Device4
Novel Low Loss LIGBT With Assisted Depletion N-Region and P-Buried Layer4
Graphitic Carbon Nitride (g-C₃N₄)/Al₂O₃ Heterostructure as Double Dielectric: A Comparative Study in MIS Based on a-IGZO4
Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays4
Correlation Image Sensor for Algebraic Solution of Optical Flow4
Photostability Study of Inverted Polymer Solar Cells Under AM 1.5G and LED Illumination via Impedance Spectroscopy4
Area-Efficient Power-Rail ESD Clamp Circuit With False-Trigger Immunity in 28nm CMOS Process4
Does the Threshold Voltage Extraction Method Affect Device Variability?4
High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs4
Impact of Die Carrier on Reliability of Power LEDs4
WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box4
The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures4
Improved Perovskite Solar Cell Performance by High Growth Rate Spatial Atomic Layer Deposited Titanium Oxide Compact Layer4
GaN-Based GAA Vertical CMOS Inverter3
Comprehensive Investigation of ANN Algorithms Implemented in MATLAB, Python, and R for Small-Signal Behavioral Modeling of GaN HEMTs3
Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications3
Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias3
Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks3
Cryogenic Small Dimension Effects and Design-Oriented Scalable Compact Modeling of a 65-nm CMOS Technology3
A Modified NMOS Inverter With Rail-To-Rail Output Swing and Its Application in the Gate Driver Integrated by Metal Oxide TFTs3
Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs3
A Comparative Study of AC Positive Bias Temperature Instability of Germanium nMOSFETs With GeO₂/Ge and Si-cap/Ge Gate Stack3
In-situ-SiN/AlN/Al0.05Ga0.95N High Electron-Mobility Transistors on Si-Substrate Using Al2O3/SiO2 Passivation3
High-Temperature Piezoresistance of Silicon Carbide and Gallium Nitride Materials3
A Comprehensive RF Characterization and Modeling Methodology for the 5nm Technology Node FinFETs3
Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs3
Investigating the Role of PM6:Y7 Layer Thickness on Optimizing Non-Fullerene Organic Solar Cells Performance Through Impedance Spectroscopy Analysis3
BEOL Process Effects on ePCM Reliability3
Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress3
Machine Learning-Assisted Device Modeling With Process Variations for Advanced Technology3
Study on CDM ESD Robustness Among On-Chip Decoupling Capacitors in CMOS Integrated Circuits3
In-Memory Computing for Machine Learning and Deep Learning3
Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs3
Design of a Horizontally Aligned Perovskite Nanowire LED With Improved Light Extraction3
Investigation of CDM ESD Protection Capability Among Power-Rail ESD Clamp Circuits in CMOS ICs With Decoupling Capacitors3
Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias3
High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs3
Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors3
Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse Forming3
Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes3
Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT3
I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures3
Analyze Scalable Sudoku-Type DTSCR ESD Protection Array Structures in 22nm FDSOI3
A Retina-Inspired Image Sensor Array Based on Randomly-Accessible Active Pixel Sensor3
Photon Counting Histogram Expectation Maximization Algorithm for Characterization of Deep Sub-Electron Read Noise Sensors3
Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage3
Schottky-Embedded Isolation Ring to Improve Latch-Up Immunity Between HV and LV Circuits in a 0.18 μm BCD Technology3
MPT Tool: A Parameter Extraction Tool for Accurate Modeling of Magnetic Tunnel Junction Devices3
Lithium-ion-Based Resistive Devices of LiCoO2/LiPON/Cu With Ultrathin Interlayers of Titanium Oxide for Neuromorphic Computing3
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