IEEE Journal of the Electron Devices Society

Papers
(The median citation count of IEEE Journal of the Electron Devices Society is 0. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-02-01 to 2025-02-01.)
ArticleCitations
Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides35
Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer28
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor24
Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection23
High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications22
Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models19
2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface17
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module16
Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors13
Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress13
The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs12
Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs12
Impact of Underlying Insulators on the Crystallinity and Antisite Defect Formation in PVD-MoS2 Films12
Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Co12
A New 13T4C LTPO MicroLED Pixel Circuit Producing Highly Stable Driving Current by Minimizing Effect of Parasitic Capacitors and Stabilizing Capacitor Nodes12
Ultrafast ID VG Technique for Reliable Cryogenic Device Characterization11
High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss11
Study on Flake Graphite Cathode Surface Microstructure in Relativistic Magnetrons11
Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions11
Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs11
An On-Chip Filter Using Near-End Cross-Coupling With Jigsaw Puzzle Shaped Resonators11
A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance11
Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications10
Monolithic Dual-Gate E-Mode Device-Based NAND Logic Block for GaN MIS-HEMTs IC Platform9
-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter 9
Hybrid Soldering 2.3D Assembly With High Reliability and Low Cost9
Monolithically Integrated Polysilicon/Oxide-Semiconductor Hybrid Thin-Film Transistors for Advanced Sensing8
Pelgrom-Based Predictive Model to Estimate Metal Grain Granularity and Line Edge Roughness in Advanced Multigate MOSFETs8
A Retina-Inspired Image Sensor Array Based on Randomly-Accessible Active Pixel Sensor8
Analysis of Standard-MOS and Ultra-Low-Power Diodes Composed by SOI UTBB Transistors8
Bit Depth of Drivers for Micro-LED Displays Adopting Low-Temperature Polysilicon Oxide Thin-Film Transistors8
Combining Intelligence With Rules for Device Modeling: Approximating the Behavior of AlGaN/GaN HEMTs Using a Hybrid Neural Network and Fuzzy Logic Inference System8
Scaling Properties of Ru, Rh, and Ir for Future Generation Metallization7
Experimental Verification of PCH-EM Algorithm for Characterizing DSERN Image Sensors7
The Endurance and Reliability Mechanisms Investigation of InGaZnO and InSnO Thin Film Transistors7
The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs7
Special Section on ESSDERC 20217
Guest Editorial Special Section on EDTM 20227
Golden List of Reviewers for 20227
Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si7
Enhancing Resistive Switching Characteristics of MoS2-based Memristor through O2 Plasma Irradiation-Induced Defects7
Observation and Modeling of Near-Bistable Dark-Mode Current-Voltage Characteristics in Semi-Insulating Gallium Arsenide With Implications for Photoconductors7
Significance of Overdrive Voltage in the Analysis of Short-Channel Behaviors of n-FinFET Devices7
Fermi-Level Splitting-Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector7
High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs7
Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs6
The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs6
A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding6
Piston-Mode pMUT With Mass Load6
Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks6
Machine Learning-Assisted Device Modeling With Process Variations for Advanced Technology6
AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism6
Wide Bandwidth Frequency Tripler Based on Composite Right/Left-Handed Transmission Lines with Embedded Back-to-Back Schottky Diodes6
Small-Signal and Large-Signal RF Characterization and Modeling of Low and High Voltage FinFETs for 14/16 nm Technology Node SoCs6
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM6
Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETs6
Exploring BEOL-Compatible Ferroelectricity in Ultra-Thin Hafnium Zirconium Oxide: Thermal Budget, FTJ Characteristics, and Device Reliability6
A Compact Amorphous In-Ga-Zn-Oxide Thin Film Transistor Pixel Circuit With Two Capacitors for Active Matrix Micro Light-Emitting Diode Displays6
Tungsten Trioxide Nanoparticles Modified Cuprous Oxide Film Non-Enzymatic Dopamine Sensor6
Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger6
Performance Enhancement of Asymmetrical Double Gate Junctionless CMOS Inverter With 3-nm Critical Feature Size Using Charge Sheet6
Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension6
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs6
SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology6
Graphene–Silicon Diode for 2-D Heterostructure Electrical Failure Protection6
IEEE ELECTRON DEVICES SOCIETY5
Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate5
Cryogenic Small Dimension Effects and Design-Oriented Scalable Compact Modeling of a 65-nm CMOS Technology5
Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs5
Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga2O35
A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction5
I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures5
Foreword Special Issue on the 5th Latin American Electron Device Conference5
High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode5
Capacitively Coupled Near-Threshold Biasing: Low-Power Design Based on Metal Oxide TFTs for IoT Applications5
Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT5
Semiconductor Device Modeling for Circuit and System Design5
Investigation of Electrical Property and Thermal Stability in Enhancement-Mode InxAl1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiOx Gate and Fluorine Treatment5
Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination5
Effect of Layout on TDDB in 45-nm PDSOI N-Channel FETs Under DC and AC Stress5
High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates5
A Process-Aware Analytical Gate Resistance Model for Nanosheet Field-Effect Transistors5
Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias5
Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric 4
Design and Fabrication of PDMS Microfluidic Device Combined With Urea Biosensor for Dynamic and Static Measurements4
Compact Millimeter-Wave On-Chip Dual-Band Bandpass Filter in 0.15-μm GaAs Technology4
Fast and Expandable ANN-Based Compact Model and Parameter Extraction for Emerging Transistors4
Analog Read Noise and Quantizer Threshold Estimation From Quanta Image Sensor Bit Density4
O2 and H2O Barrier-Based High Reliability and Stability Using Polytetrafluoroethylene Passivation Layer for Solution Processed Indium Oxide Thin Film Transistors4
Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage4
Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells4
Utilizing Symmetric BSIM-SOI SPICE Model for Dynamically Depleted RF SOI T/R Switches and Logic Circuits4
The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT4
Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes4
An a-IGZO TFT-Based AMOLED Pixel Circuit Employing Stable Mobility Compensation Suppressing Degradation of Detected VTH4
Special Issue on Bridging the Data Gap in Photovoltaics with Synthetic Data Generation3
Comprehensive Investigation and Comparative Analysis of Machine Learning-Based Small-Signal Modelling Techniques for GaN HEMTs3
Scaling Design Effects on Surface Buffer IGBT Characteristics3
Potentiometric MgO Film pH Sensor Measurement Analysis and Integrated Flexible Printed Circuit Board3
A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter3
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability3
Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements3
Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off3
Comprehensive Study of Inversion Capacitance in Metal-Insulator-Semiconductor Capacitor With Existing Oxide Charges3
Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge3
A 65nm Cryogenic CMOS Design and Performance at 4.2K for Quantum State Controller Application3
InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications3
Table of Contents3
Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications3
Demonstration of SA TG Coplanar IGZO TFTs With Large Subthreshold Swing Using the Back-Gate Biasing Technique for AMOLED Applications3
Explicit Function Model of Electromagnetic Reliability for CMOS Inverters Under HPM Coupling Based on Physical Mechanism Analysis and Neural Network Algorithm3
Investigation of DC and Low-Frequency Noise performance in GaN-on-Si Power MIS-HEMTs Over a Temperature Range of 4 K to 420 K3
Achieving High-Performance Solution-Processed Thin-Film Transistors by Doping Strong Reducibility Element Into Indium-Zinc-Oxide3
Application of e-Beam Voltage Contrast Technique for Overlay Improvement and Process Window Control in Multi-Patterning Interconnect Scheme3
Multilayer Crossbar Array of Amorphous Metal-Oxide Semiconductor Thin Films for Neuromorphic Systems3
Foreword Special Issue on the 4th Latin American Electron Device Conference3
Design for EMI/ESD Immunity for Flexible and Wearable Electronics3
Highly Efficient Reconfigurable Stateful Logic Operations Based on CuI Memristor-Only Arrays Prepared With a Solution-Based Process3
HCMS: A Hybrid Conductance Modulation Scheme Based on Cell-to-Cell Z-Interference for 3D NAND Neuromorphic Computing3
Charge-Based Compact Modeling of OECTs for Neuromorphic Applications3
Golden List of Reviewers for 20243
Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing3
Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer3
BEOL Process Effects on ePCM Reliability3
Design and Thermal Analysis of 2.5D and 3-D Integrated System of a CMOS Image Sensor and a Sparsity-Aware Accelerator for Autonomous Driving3
Generating Predictive Models for Emerging Semiconductor Devices3
Editorial3
Machine Learning-Based Compact Model Design for Reconfigurable FETs3
A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET3
Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application3
Investigation of the DC Performance and Linearity of InAlN/GaN HFETs via Studying the Impact of the Scaling of LGS and LG on the Source Access Resistance3
Abnormal Bias Instabilities Induced by Lateral H2O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors3
Comprehensive Investigation of ANN Algorithms Implemented in MATLAB, Python, and R for Small-Signal Behavioral Modeling of GaN HEMTs2
Balanced Performance Merit on Wind and Solar Energy Contact With Clean Environment Enrichment2
Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques2
Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors2
Robust Bidirectional Gate Driver on Array Based on Indium Gallium Zinc Oxide Thin-Film Transistor for In-Cell Touch Displays2
Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications2
A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation2
2023 Index IEEE Journal of the Electron Devices Society Vol. 112
From Mega to nano: Beyond one Century of Vacuum Electronics2
Table of Contents2
Editorial2
Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor of Peripheral-Under-Cell (PUC) NAND Flash Memory2
One-Time Programmable Memory for Ultra-Low Power ANN Inference Accelerator With Security Against Thermal Fault Injection2
Table of Contents2
A Neural Network Approach for Parameterizations of Hot Carrier Degradation Models2
Enhancing Interpretability of Neural Compact Models: Toward Reliable Device Modeling2
Area-Efficient Power-Rail ESD Clamp Circuit With False-Trigger Immunity in 28nm CMOS Process2
Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm22
Electrical Effect of Nitrogen Implanted Into LDD of MOSFETs2
Impact of Strain on Sub-3 nm Gate-All-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach2
Investigating the Role of PM6:Y7 Layer Thickness on Optimizing Non-Fullerene Organic Solar Cells Performance Through Impedance Spectroscopy Analysis2
Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications2
Study of Enhanced Ferromagnetic Behavior of Mn-Doped 2D Janus Cr2S2I2 Monolayer2
Global Shutter and Charge Binning With Quantum Dots Photodiode Arrays for NIR Imaging2
Dielectrics for 2D electronics2
A 121 A/cm2 High Current Density Copolymer OSC-Based Thin-Film Power OFET With 300 V Off-State Breakdown Voltage2
Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz2
2022 Index IEEE Journal of the Electron Devices Society Vol. 102
Expediting Manufacturing Launch Using Integrated Data With AI/ML Analytic Solutions2
Electrical and 850 nm Optical Characterisation of Back-Gate Controlled 22 nm FDSOI PIN-Diodes Without Front-Gate2
Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors2
Enhanced Carrier Injection Across S/D Contacts in Selenium-Based TMD FETs Using KI and Metal Induced Gap-States Engineering2
High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film2
Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs2
Impact of the Scaling of LGS and LG on the On-State Breakdown Voltage of InAlN/GaN HFETs With Localized Fin Under the Gate Electrode2
Flash Memory and Its Manufacturing Technology for Sustainable World2
Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators2
Wafer-Level Characterization and Monitoring Platform for Single-Photon Avalanche Diodes2
Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks2
IEEE ELECTRON DEVICES SOCIETY2
Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors2
The Implementation of a High-Performance Glucose Biosensor Based on Differential EGFET and Chopper Amplifier2
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures2
Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode2
A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET2
An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement1
Interface Scattering as a Nonlocal Transport Phenomenon in Semiconductors1
An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs1
High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications1
High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics1
Optimization of Low-Voltage-Operating Conditions for MG-MOSFETs1
Simulation and Optimization of IGZO-Based Neuromorphic System for Spiking Neural Networks1
Investigation of Photosensitive Polyimide With Low Coefficient of Thermal Expansion and Excellent Adhesion Strength for Advanced Packaging Applications1
Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model1
Fully Integrated GaN-on-Silicon Power-Rail ESD Clamp Circuit Without Transient Leakage Current During Normal Power-on Operation1
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices1
Liquid Metal-Based Microfluidic Metasurface for Controllable Electromagnetic Wave Reflection Attenuation1
Role of Solar Cells in Global Energy Transformation1
A CMOS-Compatible Gate-Assisted Photonic Demodulator With Contrast Enhancement for Time-of-Flight Sensing1
System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity1
Low-Resistive Source/Drain Formation Using Nitrogen Plasma Treatment in Self-Aligned In-Ga-Zn-Sn-O Thin-Film Transistors1
Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window1
High-Performance Germanium P-I-N Photodiodes for High-Speed, Hard X-Ray Imaging1
Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation1
A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band1
A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs1
GaN-Based GAA Vertical CMOS Inverter1
Non Quasi-Static Model of DG Junctionless FETs1
High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs1
Improvement of MoS2 Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid1
Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer1
Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations1
Efficient Quantum Dot Light-Emitting Diodes With DAA Doped Electron Transport Layer1
Probe-Dependent Residual Error Analysis for Accurate On-Wafer MOSFET Measurements up to 110 GHz1
A Comprehensive RF Characterization and Modeling Methodology for the 5nm Technology Node FinFETs1
Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3rd Quadrant Operation1
Demonstration of Gate-Related Trap Characterization in 4H-SiC MOSFETs Using Gate Stress Leakage Current1
Semiconductor Device Modeling for Circuit and System Design1
Lithium-ion-Based Resistive Devices of LiCoO2/LiPON/Cu With Ultrathin Interlayers of Titanium Oxide for Neuromorphic Computing1
A Comprehensive Study of Threshold Voltage Extraction Techniques from Room to Cryogenic Temperatures1
Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack1
Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection1
Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications1
Enhancement and Expansion of the Neural Network-Based Compact Model Using a Binning Method1
Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors1
Directly Fabricated Flexible Photodetector Based on TiO₂-Doped Carbon Nanosheets Film1
3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET1
Experimental Comparison of HfO2/X-Based ReRAM Devices Switching Properties by the MIM Capacitance1
A High-Precision Circuit-Simulator-Compatible Model for Constant Phase Element Using Rational Function Approximation1
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers1
A Novel Program Suspend Scheme for Improving the Reliability of 3D NAND Flash Memory1
Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications1
Large-Scale Training in Neural Compact Models for Accurate and Adaptable MOSFET Simulation1
Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems1
A Novel Multi-Scale Method for Thermo-Mechanical Simulation of Power Integrated Circuits1
Reduction of Low Frequency Noise of Buried Channel PMOSFETs With Retrograde Counter Doping Profiles1
A Kinetic Pathway to Orthorhombic HfZrO 1
High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping1
A Temperature-Dependent SPICE Model of SiC Power Trench MOSFET Switching Behavior Considering Parasitic Parameters1
Device and System Co-Design of Summing Network With Floating Gate-Based Stochastic Neurons1
Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection1
Cryogenic CMOS RF Device Modeling for Scalable Quantum Computer Design1
Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes1
Dynamic On-Demand Collaborative Charging Scheduling Based on Game Theory1
Utilization of Graphite Nanoparticles as a Hybrid Hole Transport Layer in Non-Fullerene Organic Solar Cells0
A Trap-Assisted Photomultiplication-Type Organic Photodetector With High Detectivity From Visible to Shortwave Infrared Light0
A Physics-Based Compact DC Model for AOS TFTs Considering Effects of Active Layer Thickness Variation0
Efficient Light Trapping in Hexagonal InP Nanostructured Solar Cells Using Plasmonic Al Nanoparticles0
Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits0
Development and Challenges of Reliability Modeling From Transistors to Circuits0
Minimizing Sensor Failures in Wireless Rechargeable Sensor Networks With Obstacles Through Fresnel Diffraction Model0
Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs0
Materials, processing and integration for neuromorphic devices and in-memory computing0
Call for Nominations for Editor-in-Chief0
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices0
A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States0
Self-Organizing Mapping Neural Network Implementation Based on 3-D NAND Flash for Competitive Learning0
New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs0
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