IEEE Journal of the Electron Devices Society

Papers
(The median citation count of IEEE Journal of the Electron Devices Society is 1. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-03-01 to 2024-03-01.)
ArticleCitations
First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz36
Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches30
Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs30
1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline24
Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs24
Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures24
Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation24
Compact Millimeter-Wave On-Chip Dual-Band Bandpass Filter in 0.15-μm GaAs Technology23
READ-Optimized 28nm HKMG Multibit FeFET Synapses for Inference-Engine Applications21
Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET17
Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications17
Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering17
Electrolyte-Gated Field Effect Transistors in Biological Sensing: A Survey of Electrolytes17
A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode16
AM PWM Driving Circuit for Mini-LED Backlight in Liquid Crystal Displays16
Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node16
1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V16
Ultrathin Sub-5-nm Hf₁₋ZrO₂ for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate15
An Inclusive Structural Analysis on the Design of 1.2kV 4H-SiC Planar MOSFETs15
Efficient and Optimized Methods for Alleviating the Impacts of IR-Drop and Fault in RRAM Based Neural Computing Systems14
1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2Bi-Layer Passivation at 2 GHz14
Work-Function Fluctuation of Gate-All-Around Silicon Nanowire n-MOSFETs: A Unified Comparison Between Cuboid and Voronoi Methods14
GaN Integrated Bridge Circuits on Bulk Silicon Substrate: Issues and Proposed Solution13
A Low Power and IR Drop Compensable AMOLED Pixel Circuit Based on Low-Temperature Poly-Si and Oxide (LTPO) TFTs Hybrid Technology13
On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs12
Comprehensive Investigation and Comparative Analysis of Machine Learning-Based Small-Signal Modelling Techniques for GaN HEMTs12
Aqueous Solution Derived Amorphous Indium Doped Gallium Oxide Thin-Film Transistors12
Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study12
Modeling and Design of FTJs as Multi-Level Low Energy Memristors for Neuromorphic Computing12
A 1200-V-Class Ultra-Low Specific On-Resistance SiC Lateral MOSFET With Double Trench Gate and VLD Technique11
Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress11
GaN MSM UV Detectors With Different Electrode Materials11
Low-Temperature Solution-Processed All Organic Integration for Large-Area and Flexible High-Resolution Imaging11
Abnormal Bias Instabilities Induced by Lateral H2O Diffusion Into Top-Gate Insulator of a-InGaZnO Thin-Film Transistors11
Core-Shell Dual-Gate Nanowire Memory as a Synaptic Device for Neuromorphic Application11
High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates With a Maximum Process Temperature of 100 °C11
Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection11
Characteristics of Field-Emission Emitters Based On Graphene Decorated ZnO Nanostructures11
Determining the Electrical Charging Speed Limit of ReRAM Devices11
High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module10
Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors10
Light-Controlled Gap-Type TFT Used for Large-Area Under-Screen Fingerprint Sensor10
Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing10
Design and Simulation of Near-Terahertz GaN Photoconductive Switches–Operation in the Negative Differential Mobility Regime and Pulse Compression10
4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications10
Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation10
A Novel Real-Time TFT Threshold Voltage Compensation Method for AM-OLED Using Double Sampling of Source Node Voltage10
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation10
Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors10
Complementary-Like Inverter Based on Organic-Inorganic Heterojunction Ambipolar Transistors on Flexible Substrate9
Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model9
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer9
Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications9
Optimal Design and Noise Analysis of High-Performance DBR-Integrated Lateral Germanium (Ge) Photodetectors for SWIR Applications9
Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs9
On the Challenges of Reliable Threshold Voltage Measurement in Ohmic and Schottky Gate p-GaN HEMTs9
A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction9
Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors8
Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter8
Fast and Expandable ANN-Based Compact Model and Parameter Extraction for Emerging Transistors8
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights8
Junction Design and Complementary Capacitance Matching for NCFET CMOS Logic8
BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions8
New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs8
AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism8
Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O₂ Thickness Scaling8
Electron Conduction Channel of Silver Nanowire Modified TiO₂ Photoanode for Improvement of Interface Impedance of Dye-Sensitized Solar Cell8
Non-Pad-Based in Situ In-Operando CDM ESD Protection Using Internally Distributed Network8
A Study of ESD-mmWave-Switch Co-Design of 28GHz Distributed Travelling Wave Switch in 22nm FDSOI for 5G Systems8
Size Effects of Poly-Si Formed by Laser Annealing With Periodic Intensity Distribution on the TFT Characteristics8
Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability7
Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions7
Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer7
Pd Nanoparticle Adsorption ZnO Nanorods for Enhancing Photodetector UV-Sensing Performance7
A Zero-Cost Technique to Improve ON-State Performance and Reliability of Power LDMOS Transistors7
A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band7
Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si7
AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate7
ESD Design Verification Aided by Mixed-Mode Multiple-Stimuli ESD Simulation7
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures7
Graded Crystalline HfO₂ Gate Dielectric Layer for High-k/Ge MOS Gate Stack6
An Integrator and Schmitt Trigger Based Voltage-to-Frequency Converter Using Unipolar Metal-Oxide Thin Film Transistors6
Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions6
Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors6
On the Critical Role of Ferroelectric Thickness for Negative Capacitance Device-Circuit Interaction6
Area and Thickness Scaling of NbOₓ-Based Threshold Switches for Oscillation Neurons6
Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness6
Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs6
Two-Dimensional Transient Temperature Distribution Measurement of GaN Light-Emitting Diode Using High Speed Camera6
Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell6
Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories6
Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor With Source/Drain Regions Doped by Al Reaction6
Quenching Statistics of Silicon Single Photon Avalanche Diodes6
Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs6
Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer6
Enhancement-Mode Characteristics of Al₀.₆₅Ga₀.₃₅N/Al₀.₃Ga₀.₇N/AlN/SiC MOS-HFETs5
Random Telegraph Noise Modeling for Circuit Analysis: RTN in Ring Oscillators5
High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb5
Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode5
Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature5
An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier5
Experimental Investigation of Threshold Voltage Temperature Effect During Cross-Temperature Write–Read Operations in 3-D NAND Flash5
2.3 kV 4H-SiC Planar-Gate Accumulation Channel Power JBSFETs: Analysis of Experimental Data5
Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction p-n Power Diodes With Mesa Edge Termination5
-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter 5
Two-Dimensional Inverters Based on MoS₂-hBN-Graphene Heterostructures Enabled by a Layer-by-Layer Dry-Transfer Method5
A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs5
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices5
Analog Read Noise and Quantizer Threshold Estimation From Quanta Image Sensor Bit Density5
A Common Drain Operational Amplifier Using Positive Feedback Integrated by Metal-Oxide TFTs5
Graphene–Silicon Diode for 2-D Heterostructure Electrical Failure Protection5
Simultaneous Analysis of Multi-Variables Effect on the Performance of Multi-Domain MFIS Negative Capacitance Field-Effect Transistors5
Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review5
Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications5
Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window5
Low-Temperature Packaging of Ion-Sensitive Organic Field-Effect Transistors on Plastic for Multiple Ion Detection4
Liquid Metal-Based Microfluidic Metasurface for Controllable Electromagnetic Wave Reflection Attenuation4
Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model4
Quasi-Ballistic Drift-Diffusion Simulation of SiGe Nanowire MOSFETs Using the Kinetic Velocity Model4
Ferroelectric-Like Non-Volatile FET With Amorphous Gate Insulator for Supervised Learning Applications4
The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures4
SPICE Modeling and Circuit Demonstration of a SiC Power IC Technology4
Notice of Removal: Exceptionally Linear and Highly Sensitive Photo-Induced Unipolar Inverter Device4
The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs4
Graphitic Carbon Nitride (g-C₃N₄)/Al₂O₃ Heterostructure as Double Dielectric: A Comparative Study in MIS Based on a-IGZO4
Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode4
Formation Mechanism of Rounded SiGe-Etch Front in Isotropic SiGe Plasma Etching for Gate-All-Around FETs4
Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT4
Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier4
Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse4
Cryogenic CMOS RF Device Modeling for Scalable Quantum Computer Design4
High Single-Event Burnout Resistance 4H-SiC Junction Barrier Schottky Diode4
Improving the Drift Effect and Hysteresis Effect of Urea Biosensor Based on Graphene Oxide/Nickel Oxide Sensing Film Modified Either by Au Nanoparticles or γ-Fe₂O₃ Nanoparticles Using Back-End 4
Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric 4
A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing4
Impact of Die Carrier on Reliability of Power LEDs4
Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated Diodes4
Characterization of 22 nm FDSOI nMOSFETs With Different Backplane Doping at Cryogenic Temperature4
No-Snapback LDMOS Using Adaptive RESURF and Hybrid Source for Ideal SOA4
Improved Perovskite Solar Cell Performance by High Growth Rate Spatial Atomic Layer Deposited Titanium Oxide Compact Layer4
Characterization and Modeling of Quantum Dot Behavior in FDSOI Devices4
Influence of the Acceptor-Type Trap on the Threshold Voltage of the Short-Channel GaN MOS-HEMT4
Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack4
Efficient Erase Operation by GIDL Current for 3D Structure FeFETs With Gate Stack Engineering and Compact Long-Term Retention Model4
A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode4
Gray Wolf Optimization-Based Modeling Technique Applied to GaN High Mobility Electron Transistors4
Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits4
A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding4
Real-Time Switching Dynamics in STT-MRAM4
Analysis of Transfer Gate Doping Profile Influence on Dark Current and FWC in CMOS Image Sensors4
Germanium Spherical Quantum-Dot Single-Hole Transistors With Self-Organized Tunnel Barriers and Self-Aligned Electrodes4
Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature4
Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N2O Plasma Treatment Followed by High Temperature Annealing in N2 Ambience4
Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons4
Amorphous IGZO Thin-Film Transistor Gate Driver in Array for Ultra-Narrow Border Displays3
Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness3
Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias3
The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs3
A Flexible Printed Circuit Board-Based ZnO Enzymatic Uric Acid Potentiometric Biosensor Measurement and Characterization3
Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs3
A Compact Amorphous In-Ga-Zn-Oxide Thin Film Transistor Pixel Circuit With Two Capacitors for Active Matrix Micro Light-Emitting Diode Displays3
Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage3
Temperature-Dependent Narrow Width Effects of 28-nm CMOS Transistors for Cold Electronics3
A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET3
A Low-Power CMOS Image Sensor With Multiple-Column-Parallel Readout Structure3
WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box3
Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs3
Adaptive Pulse Programming Scheme for Improving the Vth Distribution and Program Performance in 3D NAND Flash Memory3
Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode3
In-situ-SiN/AlN/Al0.05Ga0.95N High Electron-Mobility Transistors on Si-Substrate Using Al2O3/SiO2 Passivation3
Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress3
Investigation of Re-Program Scheme in Charge Trap-Based 3D NAND Flash Memory3
High Temperature and Width Influence on the GIDL of Nanowire and Nanosheet SOI nMOSFETs3
Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer3
Noise-Based Simulation Technique for Circuit-Variability Analysis3
A Retina-Inspired Image Sensor Array Based on Randomly-Accessible Active Pixel Sensor3
Active-Matrix Digital Microfluidics Design and Optimization for High-Throughput Droplets Manipulation3
Development and Challenges of Reliability Modeling From Transistors to Circuits3
Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achieving Inherent Unipolar Diode 3rd Quadrant Operation3
Statistical Study of Degradation of Flexible Poly-Si TFTs Under Dynamic Bending Stress3
Solution-Processed Small Molecule Inverted Solar Cells: Impact of Electron Transport Layers3
Area-Efficient Power-Rail ESD Clamp Circuit With False-Trigger Immunity in 28nm CMOS Process3
Analyze Scalable Sudoku-Type DTSCR ESD Protection Array Structures in 22nm FDSOI3
Analysis of the Electrical Parameters of SOI Junctionless Nanowire Transistors at High Temperatures3
Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters3
Impact of AlGaN Barrier Thickness and Substrate Material on the Noise Characteristics of GaN HEMT3
MPT Tool: A Parameter Extraction Tool for Accurate Modeling of Magnetic Tunnel Junction Devices3
High Temperature Operation of E-Mode and D-Mode AlGaN/GaN MIS-HEMTs With Recessed Gates3
High Temperature Reverse Bias (HTRB) & Temperature Humidity Bias (THB) Reliability Failure Mechanisms and Improvements in Trench Power MOSFET and IGBT3
Microstructure and Granularity Effects in Electromigration3
Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process3
A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile3
Correlation Image Sensor for Algebraic Solution of Optical Flow3
Statistical Analysis of Random Telegraph Noises of MOSFET Subthreshold Currents Using a 1M Array Test Chip in a 40 nm Process3
Low Loss and Low EMI Noise CSTBT With Split Gate and Recessed Emitter Trench3
GaN-Based GAA Vertical CMOS Inverter3
Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization3
BEOL Process Effects on ePCM Reliability3
Device Physics, Modeling and Simulation of Organic Electrochemical Transistors2
Impacts of Pulsing Schemes on the Endurance of Ferroelectric Metal–Ferroelectric–Insulator–Semiconductor Capacitors2
Formulation of Ground States for 2DEG at Rough Surfaces and Application to Nonlinear Model of Surface Roughness Scattering in nMOSFETs2
Photostability Study of Inverted Polymer Solar Cells Under AM 1.5G and LED Illumination via Impedance Spectroscopy2
Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors2
Monitoring of Dose Dependent Damage in MeV Energy Hydrogen Implanted Silicon by Photo-Modulated Reflectance Measurements2
Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing2
Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques2
Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application2
Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films2
Hybrid Junction Termination Consisting of a Variation Lateral Doping Structure and a Spiral Polysilicon Resistive Field Plate2
Capacitor Reused Gate Driver for Compact In-Cell Touch Displays2
Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes Over an Extended Temperature Range2
Memory Operation of Z²-FET Without Selector at High Temperature2
Schottky-Embedded Isolation Ring to Improve Latch-Up Immunity Between HV and LV Circuits in a 0.18 μm BCD Technology2
LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification2
Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O22
High-Temperature Piezoresistance of Silicon Carbide and Gallium Nitride Materials2
Improved Symmetry of Ferroelectric Switching in HZO Based MFM Capacitors Enabled by High Pressure Annealing2
A Numerical Approach for Space Charge Limited Bipolar Flow in Cylindrical diodes2
Fast Progressive Compensation Method for Externally Compensated AMOLED Displays2
Does the Threshold Voltage Extraction Method Affect Device Variability?2
Investigating Graphene gNEMS ESD Switch for Design Optimization2
Highly Sensitive Piezoresistive Sensors Based on a Voltage Divider Circuit With TFTs for Ultra-Low Pressure Detection2
Mitigating DIBL and Short-Channel Effects for III-V FinFETs With Negative-Capacitance Effects2
Utilization of Unsigned Inputs for NAND Flash-Based Parallel and High-Density Synaptic Architecture in Binary Neural Networks2
Novel Low Loss LIGBT With Assisted Depletion N-Region and P-Buried Layer2
Stress Engineering for Drive Current Enhancement in Silicon Carbide (SiC) Power MOSFETs2
RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera2
Hybrid Soldering 2.3D Assembly With High Reliability and Low Cost2
Emerging CMOS Compatible Magnetic Memories and Logic2
Investigation of CDM ESD Protection Capability Among Power-Rail ESD Clamp Circuits in CMOS ICs With Decoupling Capacitors2
White Light-Emitting Diodes With Visible Uniform Spectral Power Distribution Packaged With Phosphor-in-Silicone/Phosphor-in-Glass Stacked Structure2
Performance Improvement by Double-Layer a-IGZO TFTs With a Top Barrier2
Using Self-Heating Resistors as a Case Study for Memristor Compact Modeling2
Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂2
Optimization of Photoelectron In-Situ Sensing Device in FD-SOI2
A Novel Multi-Scale Method for Thermo-Mechanical Simulation of Power Integrated Circuits2
MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass2
High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film2
Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control2
Four-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses for Neuromorphic Applications2
Direct Defect-Level Analysis of Metal–Insulator–Metal Capacitor Using Internal Photoemission Spectroscopy2
Piston-Mode pMUT With Mass Load2
Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic2
High-Performance GaN Vertical p-i-n Diodes via Silicon Nitride Shadowed Selective-Area Growth and Optimized FGR- and JTE-Based Edge Termination2
Effect of In-Situ Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs2
Study on CDM ESD Robustness Among On-Chip Decoupling Capacitors in CMOS Integrated Circuits2
In-Memory Computing for Machine Learning and Deep Learning2
DFT Investigation on Targeted Gas Molecules Based on Zigzag GaN Nanoribbons for Nano Sensors2
Improved Crossbar Array Architecture for Compensating Interconnection Resistance: Ferroelectric HZO-Based Synapse Case2
Temperature Effect Analysis of the Enzymatic RuO2 Biomedical Sensor for Ascorbic Acid Detection2
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