IEEE Journal of the Electron Devices Society

Papers
(The H4-Index of IEEE Journal of the Electron Devices Society is 19. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)
ArticleCitations
Golden List of Reviewers for 202259
Special Section on ESSDERC 202146
Wide Bandwidth Frequency Tripler Based on Composite Right/Left-Handed Transmission Lines with Embedded Back-to-Back Schottky Diodes40
Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications39
Thermal Characteristics Enhancement of Drain-Extended FinFETs for System on Chip Applications With Dual High-k Field Plates33
High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode33
The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs32
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs31
-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter 28
I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures25
High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile24
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM23
AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism23
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module21
Investigation of DC and Low-Frequency Noise Performance in GaN-on-Si Power MIS-HEMTs Over a Temperature Range of 4 K–420 K21
Ga2O3-Graphene Hybrid Structure for Near-Infrared Metasurface Absorber21
Enhancing Interpretability of Neural Compact Models: Toward Reliable Device Modeling20
HCMS: A Hybrid Conductance Modulation Scheme Based on Cell-to-Cell Z-Interference for 3D NAND Neuromorphic Computing20
Characterization of Oxide Trapping in SiC MOSFETs Under Positive Gate Bias19
Gaussian-Based Analytical Model for Temperature-Dependent I-V Characteristics of GaN HEMTs19
A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation19
Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode19
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