IEEE Journal of the Electron Devices Society

Papers
(The H4-Index of IEEE Journal of the Electron Devices Society is 17. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)
ArticleCitations
Wide Bandwidth Frequency Tripler Based on Composite Right/Left-Handed Transmission Lines with Embedded Back-to-Back Schottky Diodes50
Deterministic Precessional MRAM With Low Write Error Rate: Fokker-Planck Modeling and Design Optimization44
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs41
I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures39
High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode39
Thermal Characteristics Enhancement of Drain-Extended FinFETs for System on Chip Applications With Dual High-k Field Plates38
Novel Relationship Between Breakdown Voltage and Specific On-Resistance of Accumulation-Mode VDMOS34
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM28
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module26
High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile25
Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications21
Optimization of 3D-DRAM Architecture With Oxide-Semiconductor Channel Through Process and Device Simulation20
HCMS: A Hybrid Conductance Modulation Scheme Based on Cell-to-Cell Z-Interference for 3D NAND Neuromorphic Computing20
A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation19
A Neural Network Approach for Parameterizations of Hot Carrier Degradation Models18
Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge18
Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes17
Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application17
Investigation of DC and Low-Frequency Noise Performance in GaN-on-Si Power MIS-HEMTs Over a Temperature Range of 4 K–420 K17
Balanced Performance Merit on Wind and Solar Energy Contact With Clean Environment Enrichment17
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