IEEE Journal of the Electron Devices Society

Papers
(The H4-Index of IEEE Journal of the Electron Devices Society is 16. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-04-01 to 2024-04-01.)
ArticleCitations
First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz36
Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs33
Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR, and GPR-Based Approaches30
Demonstration of Low-Temperature Fine-Pitch Cu/SiO₂ Hybrid Bonding by Au Passivation26
Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures26
Compact Millimeter-Wave On-Chip Dual-Band Bandpass Filter in 0.15-μm GaAs Technology25
Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs24
1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline24
READ-Optimized 28nm HKMG Multibit FeFET Synapses for Inference-Engine Applications21
Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET18
Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering18
Electrolyte-Gated Field Effect Transistors in Biological Sensing: A Survey of Electrolytes17
A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode17
Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications17
1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V17
Ultrathin Sub-5-nm Hf₁₋ₓZrₓO₂ for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate16
AM PWM Driving Circuit for Mini-LED Backlight in Liquid Crystal Displays16
Variability Study of Ferroelectric Field-Effect Transistors Towards 7nm Technology Node16
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