IEEE Journal of the Electron Devices Society

Papers
(The H4-Index of IEEE Journal of the Electron Devices Society is 12. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-02-01 to 2025-02-01.)
ArticleCitations
Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides35
Wafer-Scale Monolithic Integration of LEDs with p-GaN-Depletion MOSFETs on a GaN LED Epitaxial Layer28
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor24
Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection23
High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications22
Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models19
2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface17
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module16
Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors13
Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress13
The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs12
Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs12
Impact of Underlying Insulators on the Crystallinity and Antisite Defect Formation in PVD-MoS2 Films12
Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Co12
A New 13T4C LTPO MicroLED Pixel Circuit Producing Highly Stable Driving Current by Minimizing Effect of Parasitic Capacitors and Stabilizing Capacitor Nodes12
0.13224291801453