IEEE Journal of the Electron Devices Society

Papers
(The H4-Index of IEEE Journal of the Electron Devices Society is 20. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)
ArticleCitations
Golden List of Reviewers for 202263
Special Section on ESSDERC 202151
Wide Bandwidth Frequency Tripler Based on Composite Right/Left-Handed Transmission Lines with Embedded Back-to-Back Schottky Diodes45
Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications41
Thermal Characteristics Enhancement of Drain-Extended FinFETs for System on Chip Applications With Dual High-k Field Plates36
The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs34
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module34
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs33
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM29
High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile27
High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode27
I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures26
AM Mini-LED Backlight Driving Circuit Using PWM Method With Power-Saving Mechanism24
Deterministic Precessional MRAM With Low Write Error Rate: Fokker-Planck Modeling and Design Optimization24
-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter 24
Investigation of DC and Low-Frequency Noise Performance in GaN-on-Si Power MIS-HEMTs Over a Temperature Range of 4 K–420 K23
Enhancing Interpretability of Neural Compact Models: Toward Reliable Device Modeling22
HCMS: A Hybrid Conductance Modulation Scheme Based on Cell-to-Cell Z-Interference for 3D NAND Neuromorphic Computing22
A Low-Temperature Poly-Silicon Thin Film Transistor Pixel Circuit for Active-Matrix Simultaneous Neurostimulation21
Ga 2 O 3 -Graphene Hybrid Structure for Near-Infrared Metasurface Absorber20
Effect of Amorphous Layer at the Heterogeneous Interface on the Device Performance of β-Ga2O3/Si Schottky Barrier Diodes20
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