IEEE Journal of the Electron Devices Society

Papers
(The H4-Index of IEEE Journal of the Electron Devices Society is 17. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-05-01 to 2026-05-01.)
ArticleCitations
Wide Bandwidth Frequency Tripler Based on Composite Right/Left-Handed Transmission Lines with Embedded Back-to-Back Schottky Diodes50
Thermal Characteristics Enhancement of Drain-Extended FinFETs for System on Chip Applications With Dual High-k Field Plates38
Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM36
Novel Gate Fabrication Process Enhancing High-Frequency Operation in AlGaN/GaN HEMTs for Ka-Band Applications35
Deterministic Precessional MRAM With Low Write Error Rate: Fokker-Planck Modeling and Design Optimization33
High Power 190 GHz Frequency Doubler Based On GaAs Schottky Diode31
High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile28
An Online Monitoring Method for Bond Wire Fatigue in IGBT Module27
Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs26
I-V-T Characteristics and Temperature Sensor Performance of a Fully 2-D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures20
HCMS: A Hybrid Conductance Modulation Scheme Based on Cell-to-Cell Z-Interference for 3D NAND Neuromorphic Computing19
Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application18
Potentiometric MgO Film pH Sensor Measurement Analysis and Integrated Flexible Printed Circuit Board17
Improved On-Resistance Characteristics in P-GaN/AlGaN/GaN HEMTs via Sputtered Boron Nitride Dielectric Film17
Effective Reduction of Hydrogen Diffusion and Reliability Degradation in Peripheral Transistor of Peripheral-Under-Cell (PUC) NAND Flash Memory17
Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge17
Enhanced Low-Damage Quantitative Hybrid Cyclic Etching for AlGaN/GaN Heteroepitaxy: Process Optimization and Device Performance Improvement17
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