APL Materials

Papers
(The H4-Index of APL Materials is 37. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)
ArticleCitations
β-Gallium oxide power electronics260
Ferroelectric field effect transistors: Progress and perspective134
Roadmap on organic–inorganic hybrid perovskite semiconductors and devices122
Inkjet printing for flexible and wearable electronics109
The spin selectivity effect in chiral materials107
Skyrmion devices for memory and logic applications104
Magnetoelectric materials and devices97
Progress and future prospects of negative capacitance electronics: A materials perspective95
Autonomous materials synthesis by machine learning and robotics89
Brain-inspired computing via memory device physics72
Fight against COVID-19: The case of antiviral surfaces65
What is in a name: Defining “high entropy” oxides64
Pushing the limits of magnetocaloric high-entropy alloys59
Strong robustness and high accuracy in predicting remaining useful life of supercapacitors54
Perspectives for next generation lithium-ion battery cathode materials53
Spintronic terahertz emitters: Status and prospects from a materials perspective52
Advances in coherent coupling between magnons and acoustic phonons51
Preparation of high entropy alloys and application to catalytical water electrolysis48
Recent advances in high-efficiency organic solar cells fabricated by eco-compatible solvents at relatively large-area scale48
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy47
Detectors—The ongoing revolution in scanning transmission electron microscopy and why this important to material characterization47
Pressing challenges of halide perovskite thin film growth47
Topological insulators for efficient spin–orbit torques46
Ferroelectric polymers and their nanocomposites for dielectric energy storage applications45
Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates44
Strongly enhanced second-order optical nonlinearity in CMOS-compatible Al1−xScxN thin films44
Enhanced electrochemical performance of vanadium carbide MXene composites for supercapacitors43
Plastic/ferroelectric molecular crystals: Ferroelectric performance in bulk polycrystalline forms43
Application of nanogenerators in acoustics based on artificial intelligence and machine learning43
Advances in magneto-ionic materials and perspectives for their application43
A new era in ferroelectrics42
Studying spin–charge conversion using terahertz pulses40
Vapor deposition of metal halide perovskite thin films: Process control strategies to shape layer properties40
Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1−x)2O3 films40
Research progress of MXenes-based wearable pressure sensors39
Field-free magnetization switching induced by the unconventional spin–orbit torque from WTe239
Ge doping of β-Ga2O3 by MOCVD38
Experimental realization of a pillared metasurface for flexural wave focusing37
Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation37
Magnetic hopfions in solids37
Room temperature Mott metal–insulator transition in V2O3 compounds induced via strain-engineering37
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