Applied Physics Express

Papers
(The TQCC of Applied Physics Express is 6. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-04-01 to 2024-04-01.)
ArticleCitations
Defect engineering in SiC technology for high-voltage power devices154
Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays99
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation42
Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio42
Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut42
4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm−241
Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1−x )2O3/β-Ga2O41
Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate40
130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts39
Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation38
Highly tunable, polarization-engineered two-dimensional electron gas in ε-AlGaO3/ε-Ga2O3 heterostructures38
Sub-pT magnetic field detection by tunnel magneto-resistive sensors37
Correlation between depolarization temperature and lattice distortion in quenched (Bi1/2Na1/2)TiO3-based ceramics35
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy35
Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping34
Characterization of Eu-doped Ba2SiO4, a high light yield scintillator33
Nanoarchitectonics Intelligence with atomic switch and neuromorphic network system33
Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature33
Low dislocation density AlN on sapphire prepared by double sputtering and annealing32
Thickness scaling of (Al0.8Sc0.2)N films with remanent polarization beyond 100 μC cm−2 around 10 nm in thickness31
Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing31
Identification of origin of E C –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epita30
Vertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate30
Polycrystalline diamond growth on β-Ga2O3 for thermal management30
Low thermal conductivity in single crystalline epitaxial germanane films30
Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (112̄0) misoriented substrate by step-flow mode28
Nanostructured planar-type uni-leg Si thermoelectric generators27
Longitudinal and transverse spatial beam profile measurement of relativistic electron bunch by electro-optic sampling27
Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers27
Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application26
Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates26
Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes26
High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light-emitting diodes26
Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing25
Highly disordered VO2 films: appearance of electronic glass transition and potential for device-level overheat protection25
Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection24
Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and22
Organic heterojunction transistors for mechanically flexible multivalued logic circuits22
Elimination of threading dislocations inα-Ga2O3by double-layered epitaxial lateral overgrowth22
263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities21
Efficient blue thermally activated delayed fluorescence emitters showing very fast reverse intersystem crossing21
Light-weight large-scale tunable metamaterial panel for low-frequency sound insulation21
Numerical simulation of artificial spin ice for reservoir computing21
Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings20
First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density20
Broadband, large-numerical-aperture and high-efficiency microwave metalens by using a double-layer transmissive metasurface20
Room temperature fabrication and post-annealing treatment of amorphous Ga2O3 photodetectors for deep-ultraviolet light detection20
High quality-factor Kerr-lens mode-locked Tm:Sc2O3 single crystal laser with anomalous spectral broadening20
Terahertz coherent oscillator integrated with slot-ring antenna using two resonant tunneling diodes20
Ammonothermal growth of 2 inch long GaN single crystals using an acidic NH4F mineralizer in a Ag-lined autoclave19
Single-beam three-axis optically pumped magnetometers with sub-100 femtotesla sensitivity19
350 °C synthesis of high-quality multilayer graphene on an insulator using Ni-induced layer exchange19
Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient18
Fabrication of diamond modulation-doped FETs by NO2 delta doping in an Al2O3 gate layer18
Observation of nonreciprocal superconducting critical field18
Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations17
Tunable plasmon-induced transparency based on monolayer black phosphorus by bright-dark mode coupling17
Single shot radiography by a bright source of laser-driven thermal neutrons and x-rays17
Structural evolution of laser-irradiated ultrananocrystalline diamond/amorphous carbon composite films prepared by coaxial arc plasma17
LD-pumped 2.8 μm Er:Lu2O3 ceramic laser with 6.7 W output power and >30% slope efficiency17
Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment17
3D rampart-based dual-band metamaterial absorber with wide-incident-angle stability17
Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration16
Application of Bayesian optimization for improved passivation performance in TiO x /SiO y /c-Si heterostructure 16
Asymmetric acoustic beam shaping based on monolayer binary metasurfaces16
Magnetic tunnel junctions with metastable bcc Co3Mn electrodes16
AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate16
Real-time prediction of interstitial oxygen concentration in Czochralski silicon using machine learning16
Active magnetic regenerative refrigeration using superconducting solenoid for hydrogen liquefaction16
Silver mirror for enhancing the magnetic plasmon resonance and sensing performance in plasmonic metasurface16
InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall16
A 43.0% efficient GaInP photonic power converter with a distributed Bragg reflector under high-power 638 nm laser irradiation of 17 W cm−216
Reduction of dislocation density in lattice-relaxed Al0.68Ga0.32N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance of UV16
Enhancement of superconducting transition temperature in electrochemically etched FeSe/LaAlO3 films15
Nano-height cylindrical waveguide in GaN-based vertical-cavity surface-emitting lasers15
Self-powered ultraviolet–visible–near infrared perovskite/silicon hybrid photodetectors based on a novel Si/SnO2/MAPbI3/MoO3 heterostructure15
Laser-induced terahertz emission from layered synthetic magnets15
Latticed underwater acoustic Luneburg lens15
28.3% efficient perovskite-silicon tandem solar cells with mixed self-assembled monolayers15
Large surface acoustic wave nonreciprocity in synthetic antiferromagnets15
Self-sweeping ytterbium-doped fiber laser based on a fiber saturable absorber15
Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing15
Tunable high-order harmonic and dual-wavelength mode-locking in Er-doped fiber laser based on Ti3C2T x -Mxene15
Dual-comb-based asynchronous pump-probe measurement with an ultrawide temporal dynamic range for characterization of photo-excited InAs quantum dots14
Extreme reduction of on-resistance in vertical GaN p–n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method14
Diode pumped visible Dy3+-doped silica fiber laser: Ge-co-doping effects on lasing efficiency and photodarkening14
Graphene oxide functionalized micro-tapered long-period fiber grating for sensitive heavy metal sensing14
Accelerated ferroelectric phase transformation in HfO2/ZrO2 nanolaminates14
Controlling skyrmion motion in an angelfish-type racetrack memory by an AC magnetic field14
Effects of the sequential implantation of Mg and N ions into GaN for p-type doping14
Longitudinal Ramsey spectroscopy of atoms for continuous operation of optical clocks14
Tunability for anomalous refraction of flexural wave in a magneto-elastic metasurface by magnetic field and pre-stress14
Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure14
Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures14
The effects of proton radiation on aluminum oxide/zirconium-doped hafnium oxide stacked ferroelectric tunneling junctions13
AlN/Al0.5Ga0.5N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering13
Acoustic hook beam lens for particle trapping13
Intermixing suppression through the interface in GeTe/Sb2Te3 superlattice13
Wavelength-switchable 9.5 GHz graphene mode-locked waveguide laser13
Marked improvement in reliability of 150 °C processed IGZO thin-film transistors by applying hydrogenated IGZO as a channel material13
Experimental and theoretical analyses of curvature and surface strain in bent polymer films13
Dual-band dual-polarization reconfigurable THz antenna based on graphene13
An ultra-narrow photonic nanojet generated from a high refractive-index micro-flat-ended cylinder13
A liquid thermoelectric device composed of organic solution13
Room-temperature continuous-wave operations of GaN-based vertical-cavity surface-emitting lasers with buried GaInN tunnel junctions13
High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy13
Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate13
Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering13
Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors13
Possible impact of plasma oxidation on the structure of the C-terminal domain of SARS-CoV-2 spike protein: a computational study13
Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments13
Experimental demonstration of GaN IMPATT diode at X-band12
Dual-toroidal analog EIT with metamaterial12
Unconventional isotope effect on transition temperature in BiS2-based superconductor Bi4O4S312
Guiding of dynamic skyrmions using chiral magnetic domain wall12
Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO12
Statistical interaction analyses between SARS-CoV-2 main protease and inhibitor N3 by combining molecular dynamics simulation and fragment molecular orbital calculation12
Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions12
Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature12
Terahertz-wave detector on silicon carbide platform12
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy11
Discriminative sensing of temperature and acoustic impedance by using forward Brillouin scattering in large effective area fiber11
Nanostructure design for high performance thermoelectric materials based on anomalous Nernst effect using metal/semiconductor multilayer11
Lateral charge migration induced abnormal read disturb in 3D charge-trapping NAND flash memory11
Room temperature demonstration of in-materio reservoir computing for optimizing Boolean function with single-walled carbon nanotube/porphyrin-polyoxometalate composite11
265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions11
Observation of high carrier mobility in CH3NH3PbBr3 single crystals by AC photo-Hall measurements11
MoS2-carbon nanotube heterostructure as efficient hole transporters and conductors in perovskite solar cells11
A visible and near-infrared broadband light absorber of cone-shaped metallic cavities11
Stress–strain state in α-Ga2O3 epitaxial films on α-Al2O3 substrates11
Ultrahigh electric and magnetic near field enhancement based on high-Q whispering gallery modes in subwavelength all-dielectric resonators11
Growth of extremely flat Bi(110) films on a Si(111)√3 × √3-B substrate11
High-speed multi-beam X-ray imaging using a lens coupling detector system11
Self-focusing 3D lithography with varying refractive index polyethylene glycol diacrylate10
A Watt-level noise-like Tm-doped fiber oscillator by nonlinear polarization rotation10
Efficient terahertz wave generation of diabolo-shaped Fe/Pt spintronic antennas driven by a 780 nm pump beam10
Broadband tunable acoustic metasurface based on piezoelectric composite structure with two resonant modes10
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing10
Coherent detection stochastic resonance assisted biomagnetometer for measuring magnetocardiography at room temperature10
Cold plasma treatment of Arabidopsis thaliana (L.) seeds modulates plant-associated microbiome composition10
Broadband flux-pumped Josephson parametric amplifier with an on-chip coplanar waveguide impedance transformer10
High power surface grating slow-light VCSEL10
Surface plasmon polaritons enhanced magnetic plasmon resonance for high-quality sensing10
Phase stability and impact of water on CsSnI3 perovskite10
Tunable giant negative thermal expansion in Ti2O3-based polycrystalline materials10
High quality GaN crystal grown by hydride vapor-phase epitaxy on SCAATTM10
Mobility enhancement in heavily doped 4H-SiC (0001), (112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process10
Deep-learning-based semantic image segmentation of graphene field-effect transistors10
Polarity tuning of crystalline AlN films utilizing trace oxygen involved sputtering and post-high-temperature annealing10
Metamaterial perfect absorber-enhanced plasmonic photo-thermoelectric conversion10
Surface grating VCSEL-integrated amplifier/beam scanner with high power and single mode operation10
Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (∼43 kA cm−2) using a laser liftoff method10
Controlled CVD growth of lateral and vertical graphene/h-BN heterostructures10
Room temperature, single-mode 1.0 THz semiconductor source based on long-wavelength infrared quantum-cascade laser10
A multi-band closed-cell metamaterial absorber based on a low-permittivity all-dielectric structure9
Magnetic shield integration for a chip-scale atomic clock9
Laser-induced terahertz emission in Co2MnSi/Pt structure9
Electrospray propelled by ionic wind in a bipolar system for direct delivery of charge reduced nanoparticles9
Solar cell operation of sputter-deposited n-BaSi2/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy9
A 46.7% efficient GaInP photonic power converter under high-power 638 nm laser uniform irradiation of 1.5 W cm−29
Chemically degraded grain boundaries in fine-grain Ba0.6K0.4Fe2As2 polycrystalline bulks9
Thermoelectric power factor enhancement of calcium-intercalated layered silicene by introducing metastable phase9
Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method9
Perfect acoustic absorption of Helmholtz resonators via tapered necks9
Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates9
Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves9
Three-temperature modeling of laser-induced damage process in silicon9
Demonstration of toroidal metasurfaces through near-field coupling of bright-mode resonators9
Hole spin in tunable Ge hut wire double quantum dot9
Dependency of high-speed write properties on external magnetic field in spin–orbit torque in-plane magnetoresistance devices9
Measurement range enlargement in Brillouin optical correlation-domain reflectometry based on chirp modulation scheme9
Realizing forming-free characteristic by doping Ag into HfO2-based RRAM9
Excitation of odd-mode spoof surface plasmon polaritons and its application on low-pass filters9
The tunable one-way transmission of Lamb waves by using giant magnetostrictive materials9
Extraordinary optical transmission and enhanced magneto-optical Faraday effects in one-dimensional metallic gratings9
Highly tunable dual bound states in the continuum in bulk Dirac semimetal metasurface9
Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate9
Investigation of lattice anharmonicity in thermoelectric LaOBiS2–x Se x through Grüneisen parameter9
Ultrafast rattling motion of a single atom in a fullerene cage sensed by terahertz spectroscopy9
Engineering of electron–longitudinal optical phonon coupling strength in m-plane GaN terahertz quantum cascade lasers9
Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN9
Nanoscale probing of thermally excited evanescent fields in an electrically biased graphene by near-field optical microscopy9
Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission 9
Meander-line based high-efficiency ultrawideband linear cross-polarization conversion metasurface9
Identification of Burgers vectors of threading dislocations in freestanding GaN substrates via multiphoton-excitation photoluminescence mapping9
GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique9
In-plane modification of hexagonal boron nitride particles via plasma in solution9
An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays9
“Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration9
Magnetic particle imaging using linear magnetization response-driven harmonic signal of magnetoresistive sensor9
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal9
Undoped p-type BaSi2 emitter prepared by thermal evaporation and post-annealing for crystalline silicon heterojunction solar cells9
Thermal characterization of electrically injected GaN-based microdisk lasers on Si9
First-principles calculations for Gilbert damping constant at finite temperature9
Enhanced microwave absorption performance of ultra-small Zn-doped Fe-C nanoparticles9
Ultrafast carrier dynamics in double perovskite Cs2AgBiBr6 nanocrystals9
Highly efficient operation and uniform characteristics of curved mirror vertical-cavity surface-emitting lasers8
Significant improvement of the critical current of MOD-derived YBa2Cu3O7-δ -coated conductors by post-annealing treatment8
Generation of dislocation clusters at triple junctions of random angle grain boundaries during cast growth of silicon ingots8
Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy8
Twisted bilayer graphene fabricated by direct bonding in a high vacuum8
A vertical AlGaN DUV light-emitting diode fabricated by wafer bonding and sapphire thinning technology8
Photoluminescence and scintillation properties of Yb2+-doped SrCl2−x Br x (x = 0, 1.6, 2.0) crystals8
Racetrack memory based on current-induced motion of topological Bloch lines8
Channeled implantation of magnesium ions in gallium nitride for deep and low-damage doping8
Simple and highly efficient intermittent operation circuit for triboelectric nanogenerator toward wearable electronic applications8
Robust-fidelity hyperparallel controlled-phase-flip gate through microcavities8
Effects of Mg dopant in Al-composition-graded Al x Ga1−x N (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlG8
Magnetic-field-induced polarity oscillation of superconducting diode effect8
Scalable printing of two-dimensional single crystals of organic semiconductors towards high-end device applications8
Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements8
Phonon transport properties depending on crystal orientation analyzed by nanoindentation using single-crystal silicon wafers8
Anomalous interface fixed charge generated by forming gas annealing in SiO2/GaN MOS devices8
Impact of radio-frequency power on the photoresponsivity enhancement of BaSi2 films formed by sputtering8
Ultrawide bandgap Al x Ga1–x N channel heterostructure field transistors with drain currents exceeding 1.3 A mm−18
Oblique incidence sound absorption of a hybrid structure using a micro-perforated panel and a planar actuator8
High-Frequency, low-voltage oscillations of dielectric elastomer actuators8
High-contrast light focusing through scattering media with multi-pixel encoding8
Record high extraction efficiency of free electron laser oscillator8
Effect of post-annealing on the significant photoresponsivity enhancement of BaSi2 epitaxial films on Si(111)8
Self-Q-switched and broad wavelength-tunable lasing in Tm3+-doped CaF2 single-crystal fiber8
Significant enhancement of photoresponsivity in As-doped n-BaSi2epitaxial films by atomic hydrogen passivation8
wFLFM: enhancing the resolution of Fourier light-field microscopy using a hybrid wide-field image8
Crystallization from glacial acetic acid melt via laser ablation8
Quasi-vertical GaN-on-Si reverse blocking power MOSFETs8
High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−18
Low-voltage carbon nanotube complementary electronics using chemical doping to tune the threshold voltage8
Electron spin contrast of high-density and perfectly aligned nitrogen-vacancy centers synthesized by chemical vapor deposition7
Thickness dependence of spin Peltier effect visualized by thermal imaging technique7
p-NiO junction termination extensions for GaN power devices7
Compact solid-state vertical-cavity-surface-emitting-laser beam scanning module with ultra-large field of view7
Improvement in laser-based micro-processing of carbon nanotube film devices7
Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−17
Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation7
Low threshold voltage blue light emitting diodes based on thulium doped gallium oxides7
Chirality-induced effective magnetic field in a phthalocyanine molecule7
AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al0.9Ga0.1N current spreading layer7
Structural phase transition and negative thermal expansion in Cu 1.8 Zn0.2V2–x P x 7
Multimodal nonlinear optical imaging ofCaenorhabditis eleganswith multiplex coherent anti-Stokes Raman scattering, third-harmonic generation, second-harmonic generation, and two-photon excitati7
Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD7
Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga2O37
Collective residue interactions in trimer complexes of SARS-CoV-2 spike proteins analyzed by fragment molecular orbital method7
Quantum cascade detectors with enhanced responsivity using coupled double-well structures7
Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes7
Spoof surface plasmon polariton developed in a rectangular waveguide with a controllable band-pass feature for millimeter-wave applications7
Robust graphene field-effect transistor biosensors via hydrophobization of SiO2 substrates7
Threshold decrease and output-power improvement in dual-loss Q-switched laser based on a few-layer WTe2 saturable absorber7
Low-pressure acidic ammonothermal growth of 2-inch-diameter nearly bowing-free bulk GaN crystals7
Stabilization of the ferroelectric phase in Hf-based oxides by oxygen scavenging7
Josephson junctions of Weyl semimetal WTe2 induced by spontaneous nucleation of PdTe superconductor7
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