Applied Physics Express

Papers
(The median citation count of Applied Physics Express is 2. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)
ArticleCitations
Defect engineering in SiC technology for high-voltage power devices187
Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays112
Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio52
Sub-pT magnetic field detection by tunnel magneto-resistive sensors50
Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate50
Nanoarchitectonics Intelligence with atomic switch and neuromorphic network system48
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation47
Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1−x )2O3/β-Ga2O45
Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut45
4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm−244
130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts43
Vertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate42
Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature38
Characterization of Eu-doped Ba2SiO4, a high light yield scintillator38
Polycrystalline diamond growth on β-Ga2O3 for thermal management36
Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers36
Thickness scaling of (Al0.8Sc0.2)N films with remanent polarization beyond 100 μC cm−2 around 10 nm in thickness35
Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes34
Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (112̄0) misoriented substrate by step-flow mode33
Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection31
Formation of high-quality SiC(0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing30
High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light-emitting diodes30
Longitudinal and transverse spatial beam profile measurement of relativistic electron bunch by electro-optic sampling28
Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates28
First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density27
263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities27
Active magnetic regenerative refrigeration using superconducting solenoid for hydrogen liquefaction27
Organic heterojunction transistors for mechanically flexible multivalued logic circuits26
Highly disordered VO2 films: appearance of electronic glass transition and potential for device-level overheat protection25
Observation of nonreciprocal superconducting critical field25
Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings25
Efficient blue thermally activated delayed fluorescence emitters showing very fast reverse intersystem crossing25
InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall24
Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy and24
Terahertz coherent oscillator integrated with slot-ring antenna using two resonant tunneling diodes24
Room temperature fabrication and post-annealing treatment of amorphous Ga2O3 photodetectors for deep-ultraviolet light detection23
Single-beam three-axis optically pumped magnetometers with sub-100 femtotesla sensitivity23
Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient22
28.3% efficient perovskite-silicon tandem solar cells with mixed self-assembled monolayers22
Broadband, large-numerical-aperture and high-efficiency microwave metalens by using a double-layer transmissive metasurface22
Diode pumped visible Dy3+-doped silica fiber laser: Ge-co-doping effects on lasing efficiency and photodarkening21
Numerical simulation of artificial spin ice for reservoir computing21
Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment20
Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration19
Tunable high-order harmonic and dual-wavelength mode-locking in Er-doped fiber laser based on Ti3C2T x -Mxene19
Effects of the sequential implantation of Mg and N ions into GaN for p-type doping19
Reduction of dislocation density in lattice-relaxed Al0.68Ga0.32N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance of UV19
Single shot radiography by a bright source of laser-driven thermal neutrons and x-rays19
A 43.0% efficient GaInP photonic power converter with a distributed Bragg reflector under high-power 638 nm laser irradiation of 17 W cm−219
AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate19
Application of Bayesian optimization for improved passivation performance in TiO x /SiO y /c-Si heterostructure 18
3D rampart-based dual-band metamaterial absorber with wide-incident-angle stability18
Large surface acoustic wave nonreciprocity in synthetic antiferromagnets18
LD-pumped 2.8 μm Er:Lu2O3 ceramic laser with 6.7 W output power and >30% slope efficiency18
Fabrication of diamond modulation-doped FETs by NO2 delta doping in an Al2O3 gate layer18
Accelerated ferroelectric phase transformation in HfO2/ZrO2 nanolaminates18
Self-powered ultraviolet–visible–near infrared perovskite/silicon hybrid photodetectors based on a novel Si/SnO2/MAPbI3/MoO3 heterostructure17
Longitudinal Ramsey spectroscopy of atoms for continuous operation of optical clocks17
The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN-HEMT with polarization-modulated threshold voltage17
Real-time prediction of interstitial oxygen concentration in Czochralski silicon using machine learning17
Asymmetric acoustic beam shaping based on monolayer binary metasurfaces17
Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing17
Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations17
Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures17
Silver mirror for enhancing the magnetic plasmon resonance and sensing performance in plasmonic metasurface16
The effects of proton radiation on aluminum oxide/zirconium-doped hafnium oxide stacked ferroelectric tunneling junctions15
Self-sweeping ytterbium-doped fiber laser based on a fiber saturable absorber15
Tunability for anomalous refraction of flexural wave in a magneto-elastic metasurface by magnetic field and pre-stress15
Experimental demonstration of GaN IMPATT diode at X-band15
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing15
AlN/Al0.5Ga0.5N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering15
Low-pressure acidic ammonothermal growth of 2-inch-diameter nearly bowing-free bulk GaN crystals15
Electron mobility along 〈0001〉 and 〈11̅00〉 directions in 4H-SiC over a wide range of donor concentration and temperature14
Efficient terahertz wave generation of diabolo-shaped Fe/Pt spintronic antennas driven by a 780 nm pump beam14
A liquid thermoelectric device composed of organic solution14
Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure14
A Watt-level noise-like Tm-doped fiber oscillator by nonlinear polarization rotation14
Terahertz-wave detector on silicon carbide platform14
Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments14
High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy14
Statistical interaction analyses between SARS-CoV-2 main protease and inhibitor N3 by combining molecular dynamics simulation and fragment molecular orbital calculation14
Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions14
Wavelength-switchable 9.5 GHz graphene mode-locked waveguide laser13
Perfect acoustic absorption of Helmholtz resonators via tapered necks13
A vertical AlGaN DUV light-emitting diode fabricated by wafer bonding and sapphire thinning technology13
Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate13
AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al0.9Ga0.1N current spreading layer13
RGB monolithic GaInN-based μLED arrays connected via tunnel junctions13
Discriminative sensing of temperature and acoustic impedance by using forward Brillouin scattering in large effective area fiber13
Possible impact of plasma oxidation on the structure of the C-terminal domain of SARS-CoV-2 spike protein: a computational study13
Magnetic-field-induced polarity oscillation of superconducting diode effect13
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy12
Dual-toroidal analog EIT with metamaterial12
A 46.7% efficient GaInP photonic power converter under high-power 638 nm laser uniform irradiation of 1.5 W cm−212
Nanostructure design for high performance thermoelectric materials based on anomalous Nernst effect using metal/semiconductor multilayer12
Lower ferroelectric coercive field of ScGaN with equivalent remanent polarization as ScAlN12
Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (∼43 kA cm−2) using a laser liftoff method12
Mobility enhancement in heavily doped 4H-SiC (0001), (112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process12
Enhanced microwave absorption performance of ultra-small Zn-doped Fe-C nanoparticles12
Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes12
Room temperature demonstration of in-materio reservoir computing for optimizing Boolean function with single-walled carbon nanotube/porphyrin-polyoxometalate composite12
Investigation of lattice anharmonicity in thermoelectric LaOBiS2–x Se x through Grüneisen parameter12
Deep-learning-based semantic image segmentation of graphene field-effect transistors12
High power surface grating slow-light VCSEL12
Ultrahigh electric and magnetic near field enhancement based on high-Q whispering gallery modes in subwavelength all-dielectric resonators12
High-Frequency, low-voltage oscillations of dielectric elastomer actuators12
Channeled implantation of magnesium ions in gallium nitride for deep and low-damage doping11
Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V−1 s−111
Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN11
Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates11
GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique11
Spoof surface plasmon polariton developed in a rectangular waveguide with a controllable band-pass feature for millimeter-wave applications11
First-principles calculations for Gilbert damping constant at finite temperature11
Broadband flux-pumped Josephson parametric amplifier with an on-chip coplanar waveguide impedance transformer11
Observation of high carrier mobility in CH3NH3PbBr3 single crystals by AC photo-Hall measurements11
Broadband tunable acoustic metasurface based on piezoelectric composite structure with two resonant modes11
Low-voltage carbon nanotube complementary electronics using chemical doping to tune the threshold voltage11
Growing of bulk β-(Al x Ga1−x )2O3 crystals from the melt by Czochralski method and investigation of their s11
An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays11
High-contrast light focusing through scattering media with multi-pixel encoding10
High thermal stability and low driven current achieved by vertical domain wall motion memory with artificial ferromagnet10
Realizing forming-free characteristic by doping Ag into HfO2-based RRAM10
Significantly boosted external quantum efficiency of AlGaN-based DUV-LED utilizing thermal annealed Ni/Al reflective electrodes10
Meander-line based high-efficiency ultrawideband linear cross-polarization conversion metasurface10
Simulation of channeled implantation of magnesium ions in gallium nitride10
Magnetic particle imaging using linear magnetization response-driven harmonic signal of magnetoresistive sensor10
Thermoelectric power factor enhancement of calcium-intercalated layered silicene by introducing metastable phase10
Surface grating VCSEL-integrated amplifier/beam scanner with high power and single mode operation10
Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive emission 10
Scalable printing of two-dimensional single crystals of organic semiconductors towards high-end device applications10
Solar cell operation of sputter-deposited n-BaSi2/p-Si heterojunction diodes and characterization of defects by deep-level transient spectroscopy10
Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy10
Highly tunable dual bound states in the continuum in bulk Dirac semimetal metasurface10
Nonlinear loss characterization of continuous wave guiding in silicon wire waveguides10
Polarity tuning of crystalline AlN films utilizing trace oxygen involved sputtering and post-high-temperature annealing10
Electrospray propelled by ionic wind in a bipolar system for direct delivery of charge reduced nanoparticles10
Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate10
Demonstration of toroidal metasurfaces through near-field coupling of bright-mode resonators10
Simple and highly efficient intermittent operation circuit for triboelectric nanogenerator toward wearable electronic applications10
Identification of Burgers vectors of threading dislocations in freestanding GaN substrates via multiphoton-excitation photoluminescence mapping10
Tunable giant negative thermal expansion in Ti2O3-based polycrystalline materials10
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal10
Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdow10
Engineering of electron–longitudinal optical phonon coupling strength in m-plane GaN terahertz quantum cascade lasers10
Three-temperature modeling of laser-induced damage process in silicon10
Crystallization from glacial acetic acid melt via laser ablation10
High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices10
Surface plasmon polaritons enhanced magnetic plasmon resonance for high-quality sensing10
Ultrafast carrier dynamics in double perovskite Cs2AgBiBr6 nanocrystals10
Over 200 cm2 V−1 s−1 of electron inversion channel mobility for AlSiO/GaN MOSFET with nitrided interface10
Coherent detection stochastic resonance assisted biomagnetometer for measuring magnetocardiography at room temperature10
Highly efficient operation and uniform characteristics of curved mirror vertical-cavity surface-emitting lasers9
Effects of Mg dopant in Al-composition-graded Al x Ga1−x N (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlG9
Multiwavelength-emitting InGaN quantum wells on convex-lens-shaped GaN microstructures9
Brillouin gain spectrum manipulation using multifrequency pump and probe for slope-assisted BOTDA with wider dynamic range9
Tunable all-normal-dispersion femtosecond Yb:fiber laser with biased nonlinear amplifying loop mirror9
Racetrack memory based on current-induced motion of topological Bloch lines9
Quantum cascade detectors with enhanced responsivity using coupled double-well structures9
Pulsed laser deposition of ZnGa2O4 thin films on Al2O3 and Si substrates for deep optoelectronic devices applications9
Dependency of high-speed write properties on external magnetic field in spin–orbit torque in-plane magnetoresistance devices9
“Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration9
The tunable one-way transmission of Lamb waves by using giant magnetostrictive materials9
Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates9
p-NiO junction termination extensions for GaN power devices9
Dissolution kinetics of main-chain-scission-type resist in organic developers9
Significant improvement of the critical current of MOD-derived YBa2Cu3O7-δ -coated conductors by post-annealing treatment9
Effect of post-annealing on the significant photoresponsivity enhancement of BaSi2 epitaxial films on Si(111)9
Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps9
Demonstration of 2D beam steering using large-scale passive optical phased array enabled by multimode waveguides with reduced phase error9
Photoluminescence and scintillation properties of Yb2+-doped SrCl2−x Br x (x = 0, 1.6, 2.0) crystals9
Thermal nanoimprint lithography of sodium hyaluronate solutions with gas permeable inorganic hybrid mold for cosmetic and pharmaceutical applications9
Extraordinary optical transmission and enhanced magneto-optical Faraday effects in one-dimensional metallic gratings9
Acoustic manipulation of fractal metamaterials with negative properties and near-zero densities8
Room-temperature spin injection and optical polarization in nitride-based blue and ultra-violet spin light-emitting diodes8
Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances8
Step-Graded AlGaN vs superlattice: role of strain relief layer in dynamic on-resistance degradation8
Insulator-to-semiconductor conversion of solution-processed ultra-wide bandgap amorphous gallium oxide via hydrogen annealing8
Effect of microstructure on lattice thermal conductivity of thermoelectric chalcopyrite CuFeS2: experimental and computational studies8
Analogy of multi-band electromagnetically induced transparency metamaterial based on simple combination of split-ring resonators8
Robust graphene field-effect transistor biosensors via hydrophobization of SiO2 substrates8
Simulated bifurcation for higher-order cost functions8
316 W high-brightness narrow-linewidth linearly-polarized all-fiber single-frequency laser at 1950 nm8
Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation8
Polarization-independent broadband achromatic metalens in the mid-infrared (3–5 μm) region8
Stabilization of the ferroelectric phase in Hf-based oxides by oxygen scavenging8
Correlation between structures and vibration properties of germanene grown by Ge segregation8
wFLFM: enhancing the resolution of Fourier light-field microscopy using a hybrid wide-field image8
Metallic nanovoid and nano hemisphere structures fabricated via simple methods to control localized surface plasmon resonances in UV and near IR wavelength regions8
Structural phase transition and negative thermal expansion in Cu 1.8 Zn0.2V2–x P x 8
Improvement in laser-based micro-processing of carbon nanotube film devices8
AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs8
IGZO synaptic thin-film transistors with embedded AlO x charge-trapping layers8
Josephson junctions of Weyl semimetal WTe2 induced by spontaneous nucleation of PdTe superconductor8
Potential of high-sensitivity tactile sensing using polymer optical fiber gratings8
Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy8
Phonon transport properties depending on crystal orientation analyzed by nanoindentation using single-crystal silicon wafers8
Piezoelectricity in binary wurtzite semiconductors: a first-principles study8
Quasi-vertical GaN-on-Si reverse blocking power MOSFETs8
High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−18
Design and fabrication of photonic crystal resonators for single-mode and vertical surface emission from strain-compensated quantum cascade lasers operating at 4.32 μm7
Narrowband focusing retroreflector with a thin-film structure7
1:1 internal mode coupling strength in GaAs doubly-clamped MEMS beam resonators with linear and nonlinear oscillations7
Time-resolved mid-infrared photoluminescence from highly strained InAs/InGaAs quantum wells grown on InP substrates7
InGaN-based LEDs on convex lens-shaped GaN arrays toward multiwavelength light emitters7
Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED7
Study on the stress and mechanism of self-separated GaN grown by Na-flux method7
Sub-millisecond 4D X-ray tomography achieved with a multibeam X-ray imaging system7
CMOS-compatible integration of telecom band InAs/InP quantum-dot single-photon sources on a Si chip using transfer printing7
Thermophysical properties of molten Ga2O3 by using the electrostatic levitation furnace in the International Space Station7
Evaluation of spin-transfer-torque efficiency using magnetization reversal against a magnetic field: comparison of FeCr with negative spin polarization and NiFe7
Ultrahigh-Q terahertz sensor based on simple all-dielectric metasurface with toroidal dipole resonance7
High figure of merit extreme bandgap Al0.87Ga0.13N-Al0.64Ga0.36N heterostructures over bulk AlN substrates7
Improved f T/f max in wide bias range by steam-annealed ultrathin-Al2O3 gate dielectrics for InP-based high-electron-mobility 7
Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga2O37
Strain engineered C31 field-effect-transistors: a new strategy to break 60 mV/decade by using electron injection from intrinsic isolated states7
Origin of recombination activity of non-coherent Σ3{111} grain boundaries with a positive deviation in the tilt angle in cast-grown silicon ingots7
Substitutional diffusion of Mg into GaN from GaN/Mg mixture7
Influence of oxygen vacancy and metal–semiconductor contact on the device performance of amorphous gallium oxide photodetectors7
Power scaling of diode-pumped Er:Y2O3 ceramic laser at 2.7 μm7
Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode7
Grain-size effect on coercivity of Nd–Fe–B nanomagnets: micromagnetics simulation based on a multi-grain model7
Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs7
Ultrafast phased-array imaging with pump excitation for closed-crack imaging7
Fabrication of deep-sub-micrometer NbN/AlN/NbN epitaxial junctions on a Si-substrate7
Monolithically integrated green-to-orange color InGaN-based nanocolumn photonic crystal LEDs with directional radiation beam profiles7
Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments7
Hydride vapor phase epitaxial growth of AlGaN7
Low threshold voltage blue light emitting diodes based on thulium doped gallium oxides7
Resonant tunneling diode integrated with metalens for high-directivity terahertz waves7
Weyl points and nodal lines in acoustic synthetic parameter space7
High-resolution biomolecules mass sensing based on a spinning optomechanical system with phonon pump7
Low threshold current density in GaInN-based laser diodes with GaN tunnel junctions7
Reproducible perovskite solar cells using a simple solvent-mediated sol−gel synthesized NiO x hole transport layer7
Mechanical-stressing measurements of formation energy of single Shockley stacking faults in 4H-SiC7
Electron spin contrast of high-density and perfectly aligned nitrogen-vacancy centers synthesized by chemical vapor deposition7
Compact spoof surface plasmonic waveguide with controllable cutoff frequency and wide stop band7
Structure dependence of oscillation characteristics of structure-simplified resonant-tunneling-diode terahertz oscillator7
A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings7
Spin-wave switching using dynamic magnonic crystal7
Voltage control of spin–orbit torque in Pd/Co/Pd/HfO x7
Compact solid-state vertical-cavity-surface-emitting-laser beam scanning module with ultra-large field of view7
Experimental detection of liquid-phase OH radical decay originating from atmospheric-pressure plasma exposure7
Performance of tertiary battery made of Prussian blue analogues7
Reconfigurable liquid electromagnetic metamaterials driven by magnetic fields7
Collective residue interactions in trimer complexes of SARS-CoV-2 spike proteins analyzed by fragment molecular orbital method7
Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices7
Second harmonic generation in GaN transverse quasi-phase-matched waveguide pumped with femtosecond laser7
Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices6
Femtosecond Z-scan measurement of third-order nonlinear optical response of fluorine-doped tin oxide6
Thickness dependence of the spintronic terahertz emission from Ni/Pt bilayer grown on MgO via electron beam deposition6
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