OOIR: Observatory of International Research

Papers

(The H4-Index of Applied Physics Express is 27. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)

Article	Citations
Defect engineering in SiC technology for high-voltage power devices	187
Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays	112
Large-size (1.7 × 1.7 mm²) β-Ga₂O₃ field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 10⁹ high on/off current ratio	52
Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate	50
Sub-pT magnetic field detection by tunnel magneto-resistive sensors	50
Nanoarchitectonics Intelligence with atomic switch and neuromorphic network system	48
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H₂ etching, SiO₂ deposition, and interface nitridation	47
Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al _x Ga_1−x)₂O₃/β-Ga₂O	45
Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut	45
4.4 kV β-Ga₂O₃ MESFETs with power figure of merit exceeding 100 MW cm⁻²	44
130 mA mm⁻¹ β-Ga₂O₃ metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts	43
Vertical β-Ga₂O₃ Schottky barrier diodes with trench staircase field plate	42
Characterization of Eu-doped Ba₂SiO₄, a high light yield scintillator	38
Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature	38
Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers	36
Polycrystalline diamond growth on β-Ga₂O₃ for thermal management	36
Thickness scaling of (Al_0.8Sc_0.2)N films with remanent polarization beyond 100 μC cm⁻² around 10 nm in thickness	35
Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes	34
Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (112̄0) misoriented substrate by step-flow mode	33
Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection	31
High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light-emitting diodes	30
Formation of high-quality SiC(0001)/SiO₂ structures by excluding oxidation process with H₂ etching before SiO₂ deposition and high-temperature N₂ annealing	30
Longitudinal and transverse spatial beam profile measurement of relativistic electron bunch by electro-optic sampling	28
Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates	28
263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities	27

Active magnetic regenerative refrigeration using superconducting solenoid for hydrogen liquefaction	27
First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm⁻¹ output power density	27