OOIR: Observatory of International Research

Papers

(The H4-Index of Applied Physics Express is 27. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-04-01 to 2024-04-01.)

Article	Citations
Defect engineering in SiC technology for high-voltage power devices	154
Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays	99
Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut	42
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H₂ etching, SiO₂ deposition, and interface nitridation	42
Large-size (1.7 × 1.7 mm²) β-Ga₂O₃ field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 10⁹ high on/off current ratio	42
Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al _x Ga_1−x)₂O₃/β-Ga₂O	41
4.4 kV β-Ga₂O₃ MESFETs with power figure of merit exceeding 100 MW cm⁻²	41
Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate	40
130 mA mm⁻¹ β-Ga₂O₃ metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts	39
Highly tunable, polarization-engineered two-dimensional electron gas in ε-AlGaO₃/ε-Ga₂O₃ heterostructures	38
Design and formation of SiC (0001)/SiO₂ interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation	38
Sub-pT magnetic field detection by tunnel magneto-resistive sensors	37
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy	35
Correlation between depolarization temperature and lattice distortion in quenched (Bi_1/2Na_1/2)TiO₃-based ceramics	35
Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping	34
Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature	33
Characterization of Eu-doped Ba₂SiO₄, a high light yield scintillator	33
Nanoarchitectonics Intelligence with atomic switch and neuromorphic network system	33
Low dislocation density AlN on sapphire prepared by double sputtering and annealing	32
Thickness scaling of (Al_0.8Sc_0.2)N films with remanent polarization beyond 100 μC cm⁻² around 10 nm in thickness	31
Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing	31
Polycrystalline diamond growth on β-Ga₂O₃ for thermal management	30
Low thermal conductivity in single crystalline epitaxial germanane films	30
Identification of origin of E _C –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epita	30
Vertical β-Ga₂O₃ Schottky barrier diodes with trench staircase field plate	30

Two-inch high-quality (001) diamond heteroepitaxial growth on sapphire (112̄0) misoriented substrate by step-flow mode	28
Nanostructured planar-type uni-leg Si thermoelectric generators	27
Longitudinal and transverse spatial beam profile measurement of relativistic electron bunch by electro-optic sampling	27
Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers	27