OOIR: Observatory of International Research

Papers

(The TQCC of IEEE Transactions on Device and Materials Reliability is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-12-01 to 2025-12-01.)

Article	Citations
From Mega to nano: Beyond one Century of Vacuum Electronics	54
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers	50
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters	36
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via	29
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module	26
Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability	24
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators	24
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data	23
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization	23
Location-Aware Error Correction for Mitigating the Impact of Interconnects on STT-MRAM Reliability	22
On the Response Time constant of Interface Defects in Accumulation	20
IEEE Transactions on Device and Materials Reliability Publication Information	19
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology	19
IEEE Transactions on Device and Materials Reliability Publication Information	19
Reliability of Advanced Nodes	18
Research of Single-Event Burnout in P-NiO/n-Ga₂O₃ Heterojunction Diode	16
Degradation Analysis of 14 nm SOI FinFETs by Influence of Hot Carrier Injection and Self-Heating Synergistic Effects	15
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition	15
Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs	15
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes	15
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI	15
Thermal Effect on Carbon Nanotube Fiber High-Ampacity Conductors at High Frequencies	14
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs	14
Insights Into the Effects of Interface Trap Charges on Electrostatic-Based Magnesium Silicide Tunneling Interface	14
IEEE Transactions on Device and Materials Reliability Publication Information	14

Lifetime Prediction of IGBT by BPNN Based on Improved Dung Beetle Optimization Algorithm	14
Effects of Electrolyte Volume on Electrochemical Migration of Tin in Water Drop Test	13
Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs	13
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging	13
Table of Contents	13
Simulation Study of Stress Effect on Performance and Design Methodology of Proposed Si/SiGe Integrated Bragg Grating Filter	13
Member Get-A-Member (MGM) Program	12
A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability	12
Introducing IEEE Collabratec	12
A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness	12
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂Transistors	12
TechRxiv: Share Your Preprint Research with the World!	12
Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method	12
Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET	11
Non-Traditional Operational Mechanisms of NbOx-Based Threshold Switching Devices Used on on-Chip ESD Protection	11
Predicting Failure Distributions of SRAM Arrays by Using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning	11
IEEE Transactions on Device and Materials Reliability Information for Authors	11
A Lifetime Prediction Method of IGBT Based on Phased Nonlinear Wiener Process	11
IEEE Transactions on Device and Materials Reliability Publication Information	11
Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects	10
From Mega to nano: Beyond one Century of Vacuum Electronics	10
Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions	10
Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process	10
Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications	9
Aging-Induced Mg Cluster Observation in GaN-Based Lasers by Atom Probe Tomography	9
Open Model Interface Assisted NBTI-Aware Design With Dual-V_th Logic Synthesis Strategy for Reliability Improvement	9
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design	9
TechRxiv: Share Your Preprint Research with the World!	9
Blank Page	9
An Analytical Model of Read-Disturb Failure Time in a Post-Cycling Resistive Switching Memory	9
Erratum to “Reliability Characterization of a Low-k Dielectric Using Magnetoresistance as a Diagnostic Tool”	9
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability	9
Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor	9
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles	8
[Blank page]	8
Proton Irradiation Effects on Single Event Burnout in AlGaN/GaN HEMTs	8
A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems	8
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation	8
Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter	8
Table of Contents	8
Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress	8
Development of Accelerated Life Testing Apparatus for Light-Emitting Diode Therapy	8
Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors	8
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits	8
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks	8
Blank Page	7
Influence of Critical Working Conditions on Stability of Varistor Characteristics	7
Error-Corrected RRAM-Based Compute-in-Memory Accelerator Using Voltage-Clamp Current Mirror	7
Design of Robust SRAM Cell With Enhanced Soft-Error Hardening for Radiation-Prone Applications	7
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs	7

IEEE Transactions on Device and MaterialsReliability publication information	7
Call for Nominations for Editor-in-Chief IEEE Electron Device Letters	7
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance	7
Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y₂O₃ Gate Dielectric	7
TechRxiv: Share Your Preprint Research with the World!	7
Investigation of Electrical Breakdown in AlGaN/GaN/AlN HEMTs Through Nanoscale Analysis and Physics-Based Modeling	7
Exploring the Optimal Solution for Graphene-Based Microstrip Line Attenuators	7
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges	6
IEEE Transactions on Device and Materials Reliability Publication Information	6
Reflow Residues on Printed Circuit Board Assemblies and Interaction With Humidity	6
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D ₂ and N ₂ Annealing	6
High Gate Reliability and Breakdown Voltage p-GaN HEMTs Based on Post-Annealing-Free Oxygen Plasma Treatment	6
An Efficient Modeling Approach for Electrothermal Migration Analysis of On-Chip Interconnects	6
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing	6
Analytical Model for Cu interconnect Lifetimes Under Combined Thermomigration and Electromigration Stress	6
Wide Band Gap Semiconductors for Automotive Applications	6
Effects of Electron Irradiation and Thermal Cycling on Electrical Properties of SiC MOSFET	6
Lifetime Prediction Method for IGBT Modules Under Combined Power Cycling–Vibration Conditions	6
Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field	6
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET	6
Introducing IEEE Collabratec	6
IEEE Transactions on Device and Materials Reliability Information for Authors	5
Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array	5
A Highly Reliable Dual-Node-Upset-Tolerant 20T Radiation Hardened SRAM Cell for Aerospace Applications	5
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI	5
Metallization Reliability of GaN-Based High-Voltage Light-Emitting Diodes	5
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN	5
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO₂/Al₂O₃ and Al₂O₃/HfO₂/Al₂O₃ Gate	5
Call for Nominations for Editor-in-Chief	5
Memristive Switching Behavior of MoO₃ Decorated PSi Heterostructure and Impact of Temperature on Device Reliability	5
Analysis of Multicrystalline Si Solar Cell Degradation Due To Reverse Bias and High Temperature Aging	5
DAAS: Differential Aging-Aware STA for Precise Timing Closure With Reduced Design Margin	4
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications	4
Front Cover	4
2023 Index IEEE Transactions on Device and Materials Reliability Vol. 23	4
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests	4
IEEE Transactions on Device and Materials Reliability Information for Authors	4
Influence of Phase Coarsening on Inhomogeneous Deformation and Fracture Behavior in Sn–Bi Solder Interconnects	4
Reliability of Advanced Nodes	4
IEEE Transactions on Device and MaterialsReliability publication information	4
ESR Modeling for Atmospheric Corrosion Behavior of Metallized Film Capacitors	4
Soft-Error-Aware SRAM for Terrestrial Applications	4
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure	4
New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory	4
IEEE Transactions on Device and Materials Reliability information for authors	4
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method	4
Comparison of Different Input Data for the Prediction of LED Solder Joints Using Artificial Neural Networks	4
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices	4
Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy	4
Modeling Degradation Kinetics of FAPbI₃ Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects	4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints	4
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"	4
Table of Contents	4
Metastable Operating Stability of Perovskite/Silicon Tandem Solar Cell Modules	4
Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique	4
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators	4
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs	4