IEEE Transactions on Device and Materials Reliability

Papers
(The TQCC of IEEE Transactions on Device and Materials Reliability is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-05-01 to 2025-05-01.)
ArticleCitations
[Front cover]48
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers40
IEEE Robert Bosch Micro and Nano Electro Mechanical Systems Award37
From Mega to nano: Beyond one Century of Vacuum Electronics26
CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations25
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via22
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters22
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data22
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization20
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module19
IEEE Transactions on Device and Materials Reliabilityinformation for authors18
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators18
Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs17
IEEE Transactions on Device and Materials Reliability Publication Information17
Machine Learning Approach for Prediction of Point Defect Effect in FinFET16
IEEE Transactions on Device and Materials Reliability Publication Information16
Workload-Aware Electromigration Analysis in Emerging Spintronic Memory Arrays15
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI14
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology13
Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs12
Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode12
On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors12
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition12
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes12
Thermal Effect on Carbon Nanotube Fiber High-Ampacity Conductors at High Frequencies11
Mitigation Technique for Single Event Transient via Pulse Quenching11
Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection11
Table of Contents10
TechRxiv: Share Your Preprint Research with the World!10
Simulation Study of Stress Effect on Performance and Design Methodology of Proposed Si/SiGe Integrated Bragg Grating Filter10
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors10
Impact of Bias Temperature Stress on IGZO/Ni/IGZO Steep Subthreshold Vertical Current Driver Fabricated at Room Temperature10
Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs10
IEEE Transactions on Device and Materials Reliability Publication Information10
Member Get-A-Member (MGM) Program10
Introducing IEEE Collabratec10
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging10
Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor9
IEEE Transactions on Device and Materials Reliability Information for Authors9
A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability9
Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects9
Predicting Failure Distributions of SRAM Arrays by Using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning9
IEEE Transactions on Device and Materials Reliability Publication Information9
Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process9
A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness9
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design8
An Analytical Model of Read-Disturb Failure Time in a Post-Cycling Resistive Switching Memory8
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability8
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation8
From Mega to nano: Beyond one Century of Vacuum Electronics8
Erratum to “Reliability Characterization of a Low-k Dielectric Using Magnetoresistance as a Diagnostic Tool”8
Blank Page8
Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications8
Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors8
Design, Fabrication and Characterization of Single-Crystalline Graphene gNEMS ESD Switches for Future ICs8
TechRxiv: Share Your Preprint Research with the World!8
Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter8
A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems7
Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs7
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks7
Development of Accelerated Life Testing Apparatus for Light-Emitting Diode Therapy7
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance7
Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress7
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits7
[Blank page]7
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs7
Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y2O3 Gate Dielectric7
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles7
TechRxiv: Share Your Preprint Research with the World!6
Blank Page6
Influence of Critical Working Conditions on Stability of Varistor Characteristics6
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges6
Table of contents6
IEEE Transactions on Device and MaterialsReliability publication information6
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET6
Analysis of Floating Limiting Rings Termination Under Repetitive Avalanche Current Stress for 4H-SiC JBS Rectifiers6
TechRxiv: Share Your Preprint Research with the World!6
Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory6
Reflow Residues on Printed Circuit Board Assemblies and Interaction With Humidity6
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing5
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing5
IEEE Transactions on Device and Materials Reliability Information for Authors5
Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique5
Introducing IEEE Collabratec5
Memristive Switching Behavior of MoO3 Decorated PSi Heterostructure and Impact of Temperature on Device Reliability5
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN5
Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array5
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI5
Metallization Reliability of GaN-Based High-Voltage Light-Emitting Diodes5
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method5
IEEE Transactions on Device and Materials Reliability Publication Information5
Table of Contents5
Call for Nominations for Editor-in-Chief5
Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field5
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices5
Wide Band Gap Semiconductors for Automotive Applications5
Lateral and Vertical Gate Oxide Stacking Impact on Noise Margins and Delays for the 8T SRAM Designed With Source Pocket Engineered GaSb/Si Heterojunction Vertical TFET: A Reliability Study5
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate5
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators5
IEEE Transactions on Device and MaterialsReliability publication information4
Power Durability Enhancement and Failure Analysis of TC-SAW Filter With Ti/Cu/Ti/Cu/Ti Electrodes4
New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory4
ESR Modeling for Atmospheric Corrosion Behavior of Metallized Film Capacitors4
IEEE Transactions on Device and Materials Reliability information for authors4
Soft-Error-Aware SRAM for Terrestrial Applications4
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure4
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"4
Characterization and Analysis of Hot Carrier Degradation Under DC and Large-Signal RF Stress in a PDSOI Floating-Body NFET-Based Power Amplifier Cell Under WiFi Operating Conditions4
Front Cover4
IEEE Transactions on Device and Materials Reliability Information for Authors4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints4
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications4
2023 Index IEEE Transactions on Device and Materials Reliability Vol. 234
Prediction of Crack Initiation at Die Corner of Molded Underfill Flip-Chip Packages Under Thermal Load by New Criteria4
Correlation of HCD and Percolation Paths in FinFETs: Study of RDF and MGG Impacts Through 3-D Particle-Based Simulation4
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs4
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests4
Modeling Degradation Kinetics of FAPbI3 Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects4
0.086353063583374