IEEE Transactions on Device and Materials Reliability

Papers
(The TQCC of IEEE Transactions on Device and Materials Reliability is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-03-01 to 2024-03-01.)
ArticleCitations
Impact of Interface Trap Charges on Analog/RF and Linearity Performances of Dual-Material Gate-Oxide-Stack Double-Gate TFET48
Critical Insights Into Fast Charging Techniques for Lithium-Ion Batteries in Electric Vehicles40
Quadruple and Sextuple Cross-Coupled SRAM Cell Designs With Optimized Overhead for Reliable Applications34
Design Optimization of Three-Stacked Nanosheet FET From Self-Heating Effects Perspective31
A Novel Hot Spot Mitigation Circuit for Improved Reliability of PV Module29
Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence29
Impact of Geometry, Doping, Temperature, and Boundary Conductivity on Thermal Characteristics of 14-nm Bulk and SOI FinFETs25
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs25
EMSpice: Physics-Based Electromigration Check Using Coupled Electronic and Stress Simulation23
Modeling of NBTS Effects in P-Channel Power VDMOSFETs23
A Highly Reliable and Energy Efficient Radiation Hardened 12T SRAM Cell Design21
Design of High-Speed Low Variation Static Noise Margin Ternary S-RAM Cells20
Exceeding Conservative Limits: A Consolidated Analysis on Modern Hardware Margins20
Double Node Upset Tolerant RHBD15T SRAM Cell Design for Space Applications20
High-Performance Radiation-Hardened Spintronic Retention Latch and Flip-Flop for Highly Reliable Processors20
Reliability-Aware Design Strategies for Stateful Logic-in-Memory Architectures19
Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement18
A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode18
Warpage Analysis of Fan-Out Panel-Level Packaging Using Equivalent CTE17
Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications17
Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors15
LED Lifetime Prediction Under Thermal-Electrical Stress15
A Gate-Grounded NMOS-Based Dual-Directional ESD Protection With High Holding Voltage for 12V Application13
Worst-Case Bias for High Voltage, Elevated-Temperature Stress of AlGaN/GaN HEMTs12
Aging Diagnosis of Bond Wire Using On-State Drain-Source Voltage Separation for SiC MOSFET12
SRAM Radiation Hardening Through Self-Refresh Operation and Error Correction12
Reliability-Oriented Automated Design of Double-Sided Cooling Power Module: A Thermo-Mechanical-Coordinated and Multi-Objective-Oriented Optimization Methodology12
Electromigration Effects in Power Grids Characterized From a 65 nm Test Chip12
Soft-Error-Aware SRAM for Terrestrial Applications12
Short Circuit Detection and Fault Current Limiting Method for IGBTs12
Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics11
Fundamental Thermal Limits on Data Retention in Low-Voltage CMOS Latches and SRAM11
Solder Joint Reliability Assessment and Pad Size Studies of FO-WLP With Glass Substrate11
Die Shift Assessment of Reconstituted Wafer for Fan-Out Wafer-Level Packaging11
ESD Protection Designs: Topical Overview and Perspective10
Time and Temperature Dependence of Copper Protrusion in Metallized Through-Glass Vias (TGVs) Fabricated in Fused Silica Substrate10
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks10
Effect of Wiring Density and Pillar Structure on Chip Packaging Interaction for Mixed-Signal Cu Low k Chips10
Copper Trace Fatigue Life Modeling for Rigid Electronic Assemblies10
TCAD Based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT10
Reliability Analysis of Power Components in Restructured DC/DC Converters10
Reliability Assessment of GaAs/Al₂O₃ Junctionless FinFET in the Presence of Interfacial Layer Defects and Radiations10
A Physics-Based Single Event Transient Pulse Width Model for CMOS VLSI Circuits9
Reliable and Radiation-Hardened Push-Pull pFlash Cell for Reconfigured FPGAs9
Reliability and Performance Analysis of Logic-in-Memory Based Binarized Neural Networks9
Investigation of Single Event Transient Effects in Junctionless Accumulation Mode MOSFET9
Warpage Modeling of Ultra-Thin Packages Based on Chemical Shrinkage and Cure-Dependent Viscoelasticity of Molded Underfill9
Accelerated Degradation of IGBTs Due to High Gate Voltage at Various Temperature Environments9
Overview of Bias Temperature Instability in Scaled DRAM Logic for Memory Transistors9
Using Confocal Microscopy and Digital Image Correlation to Measure Local Strains Around a Chip Corner and a Crack Front8
Machine Learning Approach for Prediction of Point Defect Effect in FinFET8
CMOS-Compatible Ex-Situ Incorporated Junctionless Enhancement-Mode Thin Polysilicon Film FET pH Sensor8
Design, Fabrication and Characterization of Single-Crystalline Graphene gNEMS ESD Switches for Future ICs8
Stealthy Information Leakage Through Peripheral Exploitation in Modern Embedded Systems8
Design of Compact Reliable Energy Efficient Read Disturb Free 17T CNFET Ternary S-RAM Cell8
Investigation of Self-Heating Effect in Tree-FETs by Interbridging Stacked Nanosheets: A Reliability Perspective8
A 10T Soft-Error-Immune SRAM With Multi-Node Upset Recovery for Low-Power Space Applications8
Automated Die Inking8
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors—An Analytical Approach7
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization7
Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs7
Design for High Reliability of CMOS IC With Tolerance on Total Ionizing Dose Effect7
Trap-Assisted and Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs7
Single Event Transient (SET) Mitigation Circuits With Immune Leaf Nodes7
Novel ESD Compact Modeling Methodology Using Machine Learning Techniques for Snapback and Non-Snapback ESD Devices7
Honeycomb Texturing of Hierarchical Nanoflowers of WO3as an Efficient Route to Improve Repeatability and Stability of Room Temperature Vapor Sensor7
Reliability of NAND Flash Memory as a Weight Storage Device of Artificial Neural Network7
Impact of Gamma-Ray Radiation on DC and RF Performance of 10-nm Bulk N-Channel FinFETs7
Next-Generation High-Density PCB Development by Fan-Out RDL Technology7
Reliability Characterization of Ring Oscillator Circuits for Advanced CMOS Technologies7
A Soft Error Detection and Recovery Flip-Flop for Aggressive Designs With High-Performance7
Energy Transformation Between the Inductor and the Power Transistor for the Unclamped Inductive Switching (UIS) Test7
Monitoring Initial Solder Layer Degradation in a Multichip IGBT Module via Combined TSEPs7
Impact of Dimensions of Memory Periphery FinFETs on Bias Temperature Instability7
Cell-Aware Defect Diagnosis of Customer Returns Based on Supervised Learning7
A New Scheme of the Low-Cost Multiple-Node-Upset-Tolerant Latch7
Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes Under ON-State Stress7
The Novel Structure to Enhancement Ion /Ioff Ratio Based on Field Effect Diode7
Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs6
Single Event Transients in Sub-10nm SOI MuGFETs Due to Heavy-Ion Irradiation6
Qualitative and Quantitative Diagnostic Device for Detecting Defects in Crystalline Silicon PV Cells6
A Novel DTSCR With Embedded MOS and Island Diodes for ESD Protection of High-Speed ICs6
Effect of Titanium-Polymer Interactions on Adhesion of Polymer-Copper Redistribution Layers in Advanced Packaging6
Reconstituted Wafer Deformation Analysis Through Whole Process Emulation6
Accelerated Stress Tests and Statistical Reliability Analysis of Metal-Oxide/GaN Nanostructured Sensor Devices6
Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection6
Elimination of Thermo-Mechanically Driven Circumferential Crack Formation in Copper Through-Glass via Substrate6
Demonstration of an Equivalent Material Approach for the Strain-Induced Reliability Estimation of Stacked-Chip Packaging6
A Gated-Diode ESD SCR-Incorporated BJT for Reversed Floating P⁺ Junction Modulation6
The TID Characteristics of a Radiation Hardened Sense-Switch pFLASH Cell6
High Pressure Deuterium Annealing for Improved Immunity Against Stress-Induced Threshold Voltage Degradation6
Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs6
CMOS Reliability From Past to Future: A Survey of Requirements, Trends, and Prediction Methods6
Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET’s6
Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate6
Impact of the Formation of Intermetallic Compounds in Current-Carrying Connections6
Using the Octagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments6
Low Temperature and High Pressure Oxidized Al2O3as Gate Dielectric for AlInN/GaN MIS-HEMTs5
MOZART+: Masking Outputs With Zeros for Improved Architectural Robustness and Testing of DNN Accelerators5
Detection of ESD-Induced Soft Failures by Analyzing Linux Kernel Function Calls5
Stress Analysis and Characterization of PECVD Oxide/Nitride Multi-Layered Films After Thermal Cycling5
The Influence of N-Type Buried Layer on SCR ESD Protection Devices5
Reliability Testing of 3D-Printed Polyamide Actuators5
LED Reliability Assessment Using a Novel Monte Carlo-Based Algorithm5
Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs Under Fast Cyclic Transient Stress5
Reliability-Aware Design Space Exploration for Fully Integrated RF CMOS PA5
On-Chip Adaptive VDD Scaled Architecture of Reliable SRAM Cell With Improved Soft Error Tolerance5
Investigation of Chip Temperature on Response Characteristics of the Humidity Sensor From ppm to %RH5
Proton-Induced Effect on AlGaN/GaN HEMTs After Hydrogen Treatment5
Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET4
Hybrid Multi-Graphene/Si Avalanche Transit Time <h-ATT> Terahertz Power Oscillator: Theoretical Reliability and Experimental Feasibility Studies4
Design and Analysis of Leakage-Induced False Error Tolerant Error Detecting Latch for Sub/Near-Threshold Applications4
Unveiling the Failure Mechanism of Electrical Interconnection in Thermal-Aged PV Modules4
Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints4
A Study of the Relationship Between Endurance and Retention Reliability for a HfOₓ-Based Resistive Switching Memory4
On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors4
An Extended Building-In Reliability Methodology on Evaluating SRAM Reliability by Wafer-Level Reliability Systems4
Workload-Aware Electromigration Analysis in Emerging Spintronic Memory Arrays4
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via4
Online Research on Reliability of Thermal-Vibration Coupling for PLC Optical Splitters4
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure4
Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs4
Run-Time Protection of Multi-Core Processors From Power-Noise Denial-of-Service Attacks4
Reliability Test of 21% Efficient Flexible Perovskite Solar Cell Under Concave, Convex and Sinusoidal Bending4
Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As-Based Gate-All-Around MOSFETs4
CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations4
Low-Leakage and Variable V HOLD Power Clamp for Wide Stress Time Range From ESD to Surge Test4
BTI and Soft-Error Tolerant Voltage Bootstrapped Schmitt Trigger Circuit4
STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance4
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