IEEE Transactions on Device and Materials Reliability

Papers
(The TQCC of IEEE Transactions on Device and Materials Reliability is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)
ArticleCitations
Critical Insights Into Fast Charging Techniques for Lithium-Ion Batteries in Electric Vehicles48
Quadruple and Sextuple Cross-Coupled SRAM Cell Designs With Optimized Overhead for Reliable Applications37
Design Optimization of Three-Stacked Nanosheet FET From Self-Heating Effects Perspective36
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs31
High-Performance Radiation-Hardened Spintronic Retention Latch and Flip-Flop for Highly Reliable Processors24
Design of High-Speed Low Variation Static Noise Margin Ternary S-RAM Cells23
A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode20
Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications19
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks18
LED Lifetime Prediction Under Thermal-Electrical Stress18
Short Circuit Detection and Fault Current Limiting Method for IGBTs17
Soft-Error-Aware SRAM for Terrestrial Applications15
ESD Protection Designs: Topical Overview and Perspective15
TCAD Based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT14
Aging Diagnosis of Bond Wire Using On-State Drain-Source Voltage Separation for SiC MOSFET14
Time and Temperature Dependence of Copper Protrusion in Metallized Through-Glass Vias (TGVs) Fabricated in Fused Silica Substrate13
Machine Learning Approach for Prediction of Point Defect Effect in FinFET13
MOZART+: Masking Outputs With Zeros for Improved Architectural Robustness and Testing of DNN Accelerators13
A Gate-Grounded NMOS-Based Dual-Directional ESD Protection With High Holding Voltage for 12V Application13
Reliability Analysis of Power Components in Restructured DC/DC Converters13
CMOS Reliability From Past to Future: A Survey of Requirements, Trends, and Prediction Methods13
Investigation of Self-Heating Effect in Tree-FETs by Interbridging Stacked Nanosheets: A Reliability Perspective12
A Physics-Based Single Event Transient Pulse Width Model for CMOS VLSI Circuits12
Monitoring Initial Solder Layer Degradation in a Multichip IGBT Module via Combined TSEPs12
A 10T Soft-Error-Immune SRAM With Multi-Node Upset Recovery for Low-Power Space Applications11
Solder Joint Reliability Assessment and Pad Size Studies of FO-WLP With Glass Substrate11
Effect of Wiring Density and Pillar Structure on Chip Packaging Interaction for Mixed-Signal Cu Low k Chips11
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization11
Accelerated Degradation of IGBTs Due to High Gate Voltage at Various Temperature Environments10
Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs10
Reliability and Performance Analysis of Logic-in-Memory Based Binarized Neural Networks10
Copper Trace Fatigue Life Modeling for Rigid Electronic Assemblies10
Design of Compact Reliable Energy Efficient Read Disturb Free 17T CNFET Ternary S-RAM Cell10
Next-Generation High-Density PCB Development by Fan-Out RDL Technology10
Elimination of Thermo-Mechanically Driven Circumferential Crack Formation in Copper Through-Glass via Substrate10
Design, Fabrication and Characterization of Single-Crystalline Graphene gNEMS ESD Switches for Future ICs9
Novel ESD Compact Modeling Methodology Using Machine Learning Techniques for Snapback and Non-Snapback ESD Devices9
A New Scheme of the Low-Cost Multiple-Node-Upset-Tolerant Latch9
Reliable and Radiation-Hardened Push-Pull pFlash Cell for Reconfigured FPGAs9
Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K9
A Soft Error Detection and Recovery Flip-Flop for Aggressive Designs With High-Performance9
CMOS-Compatible Ex-Situ Incorporated Junctionless Enhancement-Mode Thin Polysilicon Film FET pH Sensor9
Effect of Titanium-Polymer Interactions on Adhesion of Polymer-Copper Redistribution Layers in Advanced Packaging8
A Novel DTSCR With Embedded MOS and Island Diodes for ESD Protection of High-Speed ICs8
Trap-Assisted and Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs8
Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs8
A Gated-Diode ESD SCR-Incorporated BJT for Reversed Floating P⁺ Junction Modulation8
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors—An Analytical Approach8
Review of Double-Sided Cooling Power Modules for Driving Electric Vehicles7
Using the Octagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments7
Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs7
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles7
Single Event Transient (SET) Mitigation Circuits With Immune Leaf Nodes7
Layout-Dominated Dynamic Imbalanced Current Analysis and Its Suppression Strategy of Parallel SiC MOSFETs7
Proton-Induced Effect on AlGaN/GaN HEMTs After Hydrogen Treatment7
Impact of Gamma-Ray Radiation on DC and RF Performance of 10-nm Bulk N-Channel FinFETs7
The Novel Structure to Enhancement Ion /Ioff Ratio Based on Field Effect Diode7
Accelerated Stress Tests and Statistical Reliability Analysis of Metal-Oxide/GaN Nanostructured Sensor Devices7
Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection6
Simulation Study of High-Speed Ge Photodetector Dark and Light Current Degradation6
Qualitative and Quantitative Diagnostic Device for Detecting Defects in Crystalline Silicon PV Cells6
STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance6
High Pressure Deuterium Annealing for Improved Immunity Against Stress-Induced Threshold Voltage Degradation6
Stress Analysis and Characterization of PECVD Oxide/Nitride Multi-Layered Films After Thermal Cycling6
Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate6
Aging Monitoring Method of Bond Wires-Based on Phase-Frequency Characteristics of Differential Mode Conducted Interference Signal for IGBT Module6
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI6
Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET’s6
BTI and Soft-Error Tolerant Voltage Bootstrapped Schmitt Trigger Circuit6
The Influence of N-Type Buried Layer on SCR ESD Protection Devices5
Strain—Engineered Asymmetrical Si/Si1–xGex IR-Photo-Detector: Theoretical Reliability and Experimental Feasibility Studies5
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure5
LED Reliability Assessment Using a Novel Monte Carlo-Based Algorithm5
Workload-Aware Electromigration Analysis in Emerging Spintronic Memory Arrays5
Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As-Based Gate-All-Around MOSFETs5
Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM5
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part II—Reliability5
Optimization of Dual Field Plate AlGaN/GaN HEMTs Using Artificial Neural Networks and Particle Swarm Optimization Algorithm5
Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs5
On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors5
Reliability Test of 21% Efficient Flexible Perovskite Solar Cell Under Concave, Convex and Sinusoidal Bending5
Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO2 MOSFETs (June 2022)5
On-Chip Adaptive VDD Scaled Architecture of Reliable SRAM Cell With Improved Soft Error Tolerance5
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs5
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints5
Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET5
Hybrid Multi-Graphene/Si Avalanche Transit Time <h-ATT> Terahertz Power Oscillator: Theoretical Reliability and Experimental Feasibility Studies5
CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations5
Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process4
Categorization of PBTI Mechanisms on 4H-SiC MOSFETs by the Stress Gate Voltage and Channel Plane Orientation4
Metallic Ratio Equivalent-Time Sampling and Application to TDC Linearity Calibration4
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology4
Reflow Residues on Printed Circuit Board Assemblies and Interaction With Humidity4
ESD Stress Effect on Failure Mechanisms in GaN-on-Si Power Device4
Reliable Circuit Design Using a Fast Incremental-Based Gate Sizing Under Process Variation4
Investigating 3D NAND Flash Read Disturb Reliability With Extreme Value Analysis4
Electrochemical Migration of Immersion Silver Plated Printed Circuit Boards Contaminated by Dust Solution4
Effect of Capped Cu Layer on Protrusion Behaviors of Through Silicon via Copper (TSV-Cu) Under Double Annealing Conditions: Comparative Study4
High Precision IGBT Health Evaluation Method: Extreme Learning Machine Optimized by Improved Krill Herd Algorithm4
Failure Analysis and Performance Improvement of Phase Change Memory Based on Ge2Sb2Te54
Electromigration Performance Improvement of Metal Heaters for Si Photonic Ring Modulators4
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data4
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via4
Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications4
Mechanism Analysis and Thermal Damage Prediction of High-Power Microwave Radiated CMOS Circuits4
Probing Interface Trapping Characteristics of Au/β-Ga2O3 Schottky Barrier Diode on Si (100)4
Low-Leakage and Variable V HOLD Power Clamp for Wide Stress Time Range From ESD to Surge Test4
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN4
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET4
Negative-Bias Temperature Instability of p-GaN Gate GaN-on-Si Power Devices4
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs4
Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors4
Reliability Characterization and Failure Prediction of 3D TLC SSDs in Large-Scale Storage Systems4
Mono-Energetic Proton Induced Damages in SiC Power MOSFETs4
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