OOIR: Observatory of International Research

Papers

(The TQCC of IEEE Transactions on Device and Materials Reliability is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)

Article	Citations
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers	62
Editorial	38
Location-Aware Error Correction for Mitigating the Impact of Interconnects on STT-MRAM Reliability	36
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data	33
On the Response Time Constant of Interface Defects in Accumulation	33
Design and Reliability Assessment of a Reconfigurable Tunneling Device for Ultra Low-Power Applications	27
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators	24
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module	22
Package-Level Electro-Thermal Simulation With Transient Thermal Resistance Model for Surge Stress Failure Analysis of SiC MOSFET	22
Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability	22
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters	20
IEEE Transactions on Device and Materials Reliability Publication Information	19
IEEE Transactions on Device and Materials Reliability Publication Information	19
Reliability of Advanced Nodes	19
Research of Single-Event Burnout in P-NiO/n-Ga ₂ O ₃ Heterojunction Diode	16
Stability in Electroluminescence From Ag-NSi Schottky Junction LED: Role of Ambient Oxidation	16
Table of Contents	16
Influence of Gate Insulator Modulation on the Electrical and Material Properties of Dual-Gate InGaZnO Thin-Film Transistors	16
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes	16
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI	16
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition	16
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology	15
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs	14
IEEE Transactions on Device and Materials Reliability Publication Information	14
Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs	14

Research on the degradation mechanism of Stacked Aluminum Polymer Capacitors in Humid Environments	13
Lifetime Prediction of IGBT by BPNN Based on Improved Dung Beetle Optimization Algorithm	13
IEEE Transactions on Device and Materials Reliability Publication Information	13
Insights Into the Effects of Interface Trap Charges on Electrostatic-Based Magnesium Silicide Tunneling Interface	13
Effects of Electrolyte Volume on Electrochemical Migration of Tin in Water Drop Test	13
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging	12
Impact of Substrate Connection on Dynamic-R _ON Drift of 650 V Normally-Off Monolithic Bidirectional AlGaN/GaN HEMT	12
Degradation Analysis of 14 nm SOI FinFETs by Influence of Hot Carrier Injection and Self-Heating Synergistic Effects	12
Table of Contents	12
A Page–Sector Joint Degradation-Reliability Error Analysis Model for High-Density NAND Flash	12
A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness	11
TechRxiv: Share Your Preprint Research with the World!	11
IEEE Transactions on Device and Materials Reliability Publication Information	11
Introducing IEEE Collabratec	11
A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability	11
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂Transistors	11
Non-Traditional Operational Mechanisms of NbO _x -Based Threshold Switching Devices Used on On-Chip ESD Protection	11
Member Get-A-Member (MGM) Program	11
Electrical Switching Safe Operation Area on GaN Bidirectional Switches Under Hard-Switching Conditions by Multiple Pulse Test	11
Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method	11
Predicting Failure Distributions of SRAM Arrays by Using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning	10
Avalanche Failure Mechanisms of 1200-V/40-A 4H-SiC Junction Barrier Schottky Diodes With Various Epilayer Defects	10
Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET	10
Reliability Analysis of IGZO Thin-Film Transistor for Wearable Biosensing Applications	10
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design	10
IEEE Transactions on Device and Materials Reliability Information for Authors	10
TechRxiv: Share Your Preprint Research with the World!	10
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability	10
A Lifetime Prediction Method of IGBT Based on Phased Nonlinear Wiener Process	10
Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions	10
Aging-Induced Mg Cluster Observation in GaN-Based Lasers by Atom Probe Tomography	9
Open Model Interface Assisted NBTI-Aware Design With Dual-V _th Logic Synthesis Strategy for Reliability Improvement	9
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation	9
Blank Page	9
Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter	9
Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications	9
Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects	9
Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor	9
NAVIgator under Fire: Characterizing Voltage Limits and Soft Error Resilience of AMD NAVI GPUs	9
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits	8
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance	8
A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems	8
Table of Contents	8
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs	8
TCAD Investigation on a Novel SiC Trench MOSFET With Integrated N ⁺ -PolySi/SiC Heterojunction Diode for Improved Third-Quadrant and High-Temperature	8
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles	8
SiC MOSFET Gate-Oxide and SiC/SiO ₂ Interface Defect Charge Movement Based on the Hi-Lo C _ISS	8
Design of Robust SRAM Cell With Enhanced Soft-Error Hardening for Radiation-Prone Applications	8
Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress	7
Semi-Empirical Modeling of Hot Carrier Degradation in 12-nm FinFET LDMOS Devices	7

Degradation Mechanism of 4H-SiC MOSFET under 10 MeV Proton Irradiation	7
Exploring the Optimal Solution for Graphene-Based Microstrip Line Attenuators	7
Mitigating the Process Variations in Negative Capacitance Junctionless Device and Circuit	7
Blank Page	7
Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y₂O₃ Gate Dielectric	7
Proton Irradiation Effects on Single Event Burnout in AlGaN/GaN HEMTs	7
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks	7
TechRxiv: Share Your Preprint Research with the World!	6
Analytical Model for Cu Interconnect Lifetimes Under Combined Thermomigration and Electromigration Stress	6
Error-Corrected RRAM-Based Compute-in-Memory Accelerator Using Voltage-Clamp Current Mirror	6
Effects of Electron Irradiation and Thermal Cycling on Electrical Properties of SiC MOSFET	6
Key Factors Affecting Dynamic Reliability in GaN HEMTs and How Can They Be Mitigated?	6
Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field	6
An Efficient Modeling Approach for Electrothermal Migration Analysis of On-Chip Interconnects	6
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET	6
Lifetime Prediction Method for IGBT Modules Under Combined Power Cycling–Vibration Conditions	6
Analysis and Structural Mitigation of Trapping-State-Trap Induced Drain Leakage Current in Buried-Channel-Array Transistor	6
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges	6
IEEE Transactions on Device and Materials Reliability Publication Information	6
Call for Nominations for Editor-in-Chief IEEE Electron Device Letters	6
High Gate Reliability and Breakdown Voltage p-GaN HEMTs Based on Post-Annealing-Free Oxygen Plasma Treatment	6
Investigation of Electrical Breakdown in AlGaN/GaN/AlN HEMTs Through Nanoscale Analysis and Physics-Based Modeling	6
Influence of Critical Working Conditions on Stability of Varistor Characteristics	6
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing	6
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO₂/Al₂O₃ and Al₂O₃/HfO₂/Al₂O₃ Gate	5
Memristive Switching Behavior of MoO₃ Decorated PSi Heterostructure and Impact of Temperature on Device Reliability	5
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D ₂ and N ₂ Annealing	5
Comparison of Different Input Data for the Prediction of LED Solder Joints Using Artificial Neural Networks	5
IEEE Transactions on Device and Materials Reliability Information for Authors	5
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI	5
Influence of Phase Coarsening on Inhomogeneous Deformation and Fracture Behavior in Sn–Bi Solder Interconnects	5
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices	5
SafeHDC: Concurrent Uncertainty and Fault Detection in Hyperdimensional Computing	5
Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique	5
Call for Nominations for Editor-in-Chief	5
Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array	5
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN	5
Digital Probing of Activation Energy for Evaluating Reliability in 2-D and 3-D NAND Flash Memory	5
A Highly Reliable Dual-Node-Upset-Tolerant 20T Radiation Hardened SRAM Cell for Aerospace Applications	5
Wide Band Gap Semiconductors for Automotive Applications	5
Experimental Study on Failure Mechanism of 4H-SiC MOSFETs Under Unclamped Inductive Switching (UIS) Stress Conditions	4
Table of Contents	4
Modeling and Evaluation of Single Event Effects on Hafnia-Based FeRAM	4
DAAS: Differential Aging-Aware STA for Precise Timing Closure With Reduced Design Margin	4
Reliability of Advanced Nodes	4
Metastable Operating Stability of Perovskite/Silicon Tandem Solar Cell Modules	4
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method	4
IEEE Transactions on Device and Materials Reliability Information for Authors	4
ESR Modeling for Atmospheric Corrosion Behavior of Metallized Film Capacitors	4
Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy	4
Analysis of Multicrystalline Si Solar Cell Degradation Due to Reverse Bias and High Temperature Aging	4
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators	4
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests	4
Modeling Degradation Kinetics of FAPbI₃ Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects	4
Fast Heater‑Based NBTI Resolves the Reverse Antenna Effect in PID‑Degraded High‑k and SiO ₂ pMOSFETs	4