IEEE Transactions on Device and Materials Reliability

Papers
(The median citation count of IEEE Transactions on Device and Materials Reliability is 1. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-03-01 to 2024-03-01.)
ArticleCitations
Impact of Interface Trap Charges on Analog/RF and Linearity Performances of Dual-Material Gate-Oxide-Stack Double-Gate TFET48
Critical Insights Into Fast Charging Techniques for Lithium-Ion Batteries in Electric Vehicles40
Quadruple and Sextuple Cross-Coupled SRAM Cell Designs With Optimized Overhead for Reliable Applications34
Design Optimization of Three-Stacked Nanosheet FET From Self-Heating Effects Perspective31
A Novel Hot Spot Mitigation Circuit for Improved Reliability of PV Module29
Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence29
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs25
Impact of Geometry, Doping, Temperature, and Boundary Conductivity on Thermal Characteristics of 14-nm Bulk and SOI FinFETs25
Modeling of NBTS Effects in P-Channel Power VDMOSFETs23
EMSpice: Physics-Based Electromigration Check Using Coupled Electronic and Stress Simulation23
A Highly Reliable and Energy Efficient Radiation Hardened 12T SRAM Cell Design21
High-Performance Radiation-Hardened Spintronic Retention Latch and Flip-Flop for Highly Reliable Processors20
Design of High-Speed Low Variation Static Noise Margin Ternary S-RAM Cells20
Exceeding Conservative Limits: A Consolidated Analysis on Modern Hardware Margins20
Double Node Upset Tolerant RHBD15T SRAM Cell Design for Space Applications20
Reliability-Aware Design Strategies for Stateful Logic-in-Memory Architectures19
Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement18
A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode18
Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications17
Warpage Analysis of Fan-Out Panel-Level Packaging Using Equivalent CTE17
Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors15
LED Lifetime Prediction Under Thermal-Electrical Stress15
A Gate-Grounded NMOS-Based Dual-Directional ESD Protection With High Holding Voltage for 12V Application13
Worst-Case Bias for High Voltage, Elevated-Temperature Stress of AlGaN/GaN HEMTs12
Aging Diagnosis of Bond Wire Using On-State Drain-Source Voltage Separation for SiC MOSFET12
SRAM Radiation Hardening Through Self-Refresh Operation and Error Correction12
Reliability-Oriented Automated Design of Double-Sided Cooling Power Module: A Thermo-Mechanical-Coordinated and Multi-Objective-Oriented Optimization Methodology12
Electromigration Effects in Power Grids Characterized From a 65 nm Test Chip12
Soft-Error-Aware SRAM for Terrestrial Applications12
Short Circuit Detection and Fault Current Limiting Method for IGBTs12
Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics11
Fundamental Thermal Limits on Data Retention in Low-Voltage CMOS Latches and SRAM11
Solder Joint Reliability Assessment and Pad Size Studies of FO-WLP With Glass Substrate11
Die Shift Assessment of Reconstituted Wafer for Fan-Out Wafer-Level Packaging11
TCAD Based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT10
Reliability Analysis of Power Components in Restructured DC/DC Converters10
Reliability Assessment of GaAs/Al₂O₃ Junctionless FinFET in the Presence of Interfacial Layer Defects and Radiations10
ESD Protection Designs: Topical Overview and Perspective10
Time and Temperature Dependence of Copper Protrusion in Metallized Through-Glass Vias (TGVs) Fabricated in Fused Silica Substrate10
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks10
Effect of Wiring Density and Pillar Structure on Chip Packaging Interaction for Mixed-Signal Cu Low k Chips10
Copper Trace Fatigue Life Modeling for Rigid Electronic Assemblies10
Accelerated Degradation of IGBTs Due to High Gate Voltage at Various Temperature Environments9
Overview of Bias Temperature Instability in Scaled DRAM Logic for Memory Transistors9
A Physics-Based Single Event Transient Pulse Width Model for CMOS VLSI Circuits9
Reliable and Radiation-Hardened Push-Pull pFlash Cell for Reconfigured FPGAs9
Reliability and Performance Analysis of Logic-in-Memory Based Binarized Neural Networks9
Investigation of Single Event Transient Effects in Junctionless Accumulation Mode MOSFET9
Warpage Modeling of Ultra-Thin Packages Based on Chemical Shrinkage and Cure-Dependent Viscoelasticity of Molded Underfill9
Automated Die Inking8
Using Confocal Microscopy and Digital Image Correlation to Measure Local Strains Around a Chip Corner and a Crack Front8
Machine Learning Approach for Prediction of Point Defect Effect in FinFET8
CMOS-Compatible Ex-Situ Incorporated Junctionless Enhancement-Mode Thin Polysilicon Film FET pH Sensor8
Design, Fabrication and Characterization of Single-Crystalline Graphene gNEMS ESD Switches for Future ICs8
Stealthy Information Leakage Through Peripheral Exploitation in Modern Embedded Systems8
Design of Compact Reliable Energy Efficient Read Disturb Free 17T CNFET Ternary S-RAM Cell8
Investigation of Self-Heating Effect in Tree-FETs by Interbridging Stacked Nanosheets: A Reliability Perspective8
A 10T Soft-Error-Immune SRAM With Multi-Node Upset Recovery for Low-Power Space Applications8
Cell-Aware Defect Diagnosis of Customer Returns Based on Supervised Learning7
A New Scheme of the Low-Cost Multiple-Node-Upset-Tolerant Latch7
Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes Under ON-State Stress7
The Novel Structure to Enhancement Ion /Ioff Ratio Based on Field Effect Diode7
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors—An Analytical Approach7
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization7
Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs7
Design for High Reliability of CMOS IC With Tolerance on Total Ionizing Dose Effect7
Trap-Assisted and Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs7
Single Event Transient (SET) Mitigation Circuits With Immune Leaf Nodes7
Novel ESD Compact Modeling Methodology Using Machine Learning Techniques for Snapback and Non-Snapback ESD Devices7
Honeycomb Texturing of Hierarchical Nanoflowers of WO3as an Efficient Route to Improve Repeatability and Stability of Room Temperature Vapor Sensor7
Reliability of NAND Flash Memory as a Weight Storage Device of Artificial Neural Network7
Impact of Gamma-Ray Radiation on DC and RF Performance of 10-nm Bulk N-Channel FinFETs7
Next-Generation High-Density PCB Development by Fan-Out RDL Technology7
Reliability Characterization of Ring Oscillator Circuits for Advanced CMOS Technologies7
A Soft Error Detection and Recovery Flip-Flop for Aggressive Designs With High-Performance7
Energy Transformation Between the Inductor and the Power Transistor for the Unclamped Inductive Switching (UIS) Test7
Monitoring Initial Solder Layer Degradation in a Multichip IGBT Module via Combined TSEPs7
Impact of Dimensions of Memory Periphery FinFETs on Bias Temperature Instability7
CMOS Reliability From Past to Future: A Survey of Requirements, Trends, and Prediction Methods6
Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET’s6
Effect of Titanium-Polymer Interactions on Adhesion of Polymer-Copper Redistribution Layers in Advanced Packaging6
Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs6
Reconstituted Wafer Deformation Analysis Through Whole Process Emulation6
Single Event Transients in Sub-10nm SOI MuGFETs Due to Heavy-Ion Irradiation6
Accelerated Stress Tests and Statistical Reliability Analysis of Metal-Oxide/GaN Nanostructured Sensor Devices6
Qualitative and Quantitative Diagnostic Device for Detecting Defects in Crystalline Silicon PV Cells6
A Novel DTSCR With Embedded MOS and Island Diodes for ESD Protection of High-Speed ICs6
A Gated-Diode ESD SCR-Incorporated BJT for Reversed Floating P⁺ Junction Modulation6
The TID Characteristics of a Radiation Hardened Sense-Switch pFLASH Cell6
Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection6
High Pressure Deuterium Annealing for Improved Immunity Against Stress-Induced Threshold Voltage Degradation6
Elimination of Thermo-Mechanically Driven Circumferential Crack Formation in Copper Through-Glass via Substrate6
Demonstration of an Equivalent Material Approach for the Strain-Induced Reliability Estimation of Stacked-Chip Packaging6
Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate6
Impact of the Formation of Intermetallic Compounds in Current-Carrying Connections6
Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs6
Using the Octagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments6
Low Temperature and High Pressure Oxidized Al2O3as Gate Dielectric for AlInN/GaN MIS-HEMTs5
MOZART+: Masking Outputs With Zeros for Improved Architectural Robustness and Testing of DNN Accelerators5
Detection of ESD-Induced Soft Failures by Analyzing Linux Kernel Function Calls5
Stress Analysis and Characterization of PECVD Oxide/Nitride Multi-Layered Films After Thermal Cycling5
The Influence of N-Type Buried Layer on SCR ESD Protection Devices5
Reliability Testing of 3D-Printed Polyamide Actuators5
LED Reliability Assessment Using a Novel Monte Carlo-Based Algorithm5
Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs Under Fast Cyclic Transient Stress5
Reliability-Aware Design Space Exploration for Fully Integrated RF CMOS PA5
On-Chip Adaptive VDD Scaled Architecture of Reliable SRAM Cell With Improved Soft Error Tolerance5
Investigation of Chip Temperature on Response Characteristics of the Humidity Sensor From ppm to %RH5
Proton-Induced Effect on AlGaN/GaN HEMTs After Hydrogen Treatment5
Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET4
Hybrid Multi-Graphene/Si Avalanche Transit Time <h-ATT> Terahertz Power Oscillator: Theoretical Reliability and Experimental Feasibility Studies4
Design and Analysis of Leakage-Induced False Error Tolerant Error Detecting Latch for Sub/Near-Threshold Applications4
Unveiling the Failure Mechanism of Electrical Interconnection in Thermal-Aged PV Modules4
Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints4
A Study of the Relationship Between Endurance and Retention Reliability for a HfOₓ-Based Resistive Switching Memory4
On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors4
An Extended Building-In Reliability Methodology on Evaluating SRAM Reliability by Wafer-Level Reliability Systems4
Workload-Aware Electromigration Analysis in Emerging Spintronic Memory Arrays4
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via4
Online Research on Reliability of Thermal-Vibration Coupling for PLC Optical Splitters4
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure4
Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs4
Run-Time Protection of Multi-Core Processors From Power-Noise Denial-of-Service Attacks4
Reliability Test of 21% Efficient Flexible Perovskite Solar Cell Under Concave, Convex and Sinusoidal Bending4
Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As-Based Gate-All-Around MOSFETs4
CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations4
Low-Leakage and Variable V HOLD Power Clamp for Wide Stress Time Range From ESD to Surge Test4
BTI and Soft-Error Tolerant Voltage Bootstrapped Schmitt Trigger Circuit4
STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance4
Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process3
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs3
Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition3
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN3
Negative-Bias Temperature Instability of p-GaN Gate GaN-on-Si Power Devices3
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI3
Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM3
Insights Into the Effect of TiN Thickness Scaling on DC and AC NBTI Characteristics in Replacement Metal Gate pMOSFETs3
Reliability Characterization and Failure Prediction of 3D TLC SSDs in Large-Scale Storage Systems3
Effect of Device Dimensions, Layout and Pre-Gate Carbon Implant on Hot Carrier Induced Degradation in HKMG nMOS Transistors3
BTI-Aware Timing Reliability Improvement of Pulsed Flip-Flops in Nano-Scale CMOS Technology3
Aging Monitoring Method of Bond Wires-Based on Phase-Frequency Characteristics of Differential Mode Conducted Interference Signal for IGBT Module3
Layout-Dominated Dynamic Imbalanced Current Analysis and Its Suppression Strategy of Parallel SiC MOSFETs3
High Precision IGBT Health Evaluation Method: Extreme Learning Machine Optimized by Improved Krill Herd Algorithm3
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET3
Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO2 MOSFETs (June 2022)3
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs3
Life Cycle Assessment of a Lead-Free Cesium Titanium (IV) Single and Mixed Halide Perovskite Solar Cell Based 1 m² PV Module3
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles3
Probing Interface Trapping Characteristics of Au/β-Ga2O3 Schottky Barrier Diode on Si (100)3
Impedance Investigation of MIFM Ferroelectric Tunnel Junction Using a Comprehensive Small-Signal Model3
NrGO Floating Gate/SiOXNY Tunneling Layer Stack for Nonvolatile Flash Memory Applications3
Electron Beam Induced Degradation in Electrical Characteristics of Optocoupler3
Failure Analysis and Performance Improvement of Phase Change Memory Based on Ge2Sb2Te53
An Investigation of Field Reduction Effect on NBTI Parameter Characterization and Lifetime Prediction Using a Constant Field Stress Method3
Reflow Residues on Printed Circuit Board Assemblies and Interaction With Humidity3
Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices3
Geometric Nonlinear Effect on Biaxial Bending Strength of Thin Silicon Die in the PoEF Test3
Efficiency and Catastrophic Failure of High-Power Blue GaN LEDs During Extremely High Temperature and Current Stress3
Mechanism Analysis and Thermal Damage Prediction of High-Power Microwave Radiated CMOS Circuits3
Strain—Engineered Asymmetrical Si/Si1–xGex IR-Photo-Detector: Theoretical Reliability and Experimental Feasibility Studies3
Effect of Crack Evolution on the Resistance and Current Density of the Al Metallization in the IGBT Module During Power Cycling2
Effect of Ion Implant Modification on Electrical Properties of MTM Antifuse a-Si Films2
Applying a Statistical Model to the Observed Texture Evolution of Fatigued Metal Films2
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part II—Reliability2
A 16nm All-Digital Hardware Monitor for Evaluating Electromigration Effects in Signal Interconnects Through Bit-Error-Rate Tracking2
Electrochemical Migration of Immersion Silver Plated Printed Circuit Boards Contaminated by Dust Solution2
Analysis of Hump Effect Induced by Positive Bias Temperature Instability in the Local Oxidation of Silicon n-MOSFETs2
Various Reliability Investigations of Low Temperature Polycrystalline Silicon Tunnel Field-Effect Thin-Film Transistor2
Combined Methodology for Accurate Evaluation of Distance and Direction of Chromaticity Shifts in LED Reliability Tests2
Method of Precise Positioning for Defect Failure Analysis Based on Nano-Probing and EBAC2
Power Durability Enhancement and Failure Analysis of TC-SAW Filter With Ti/Cu/Ti/Cu/Ti Electrodes2
Simulation Study of High-Speed Ge Photodetector Dark and Light Current Degradation2
Metallic Ratio Equivalent-Time Sampling and Application to TDC Linearity Calibration2
Effect of Different PBO-Based RDL Structures on Chip-Package Interaction Reliability of Wafer Level Package2
Development of Accelerated Life Testing Apparatus for Light-Emitting Diode Therapy2
Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors2
Characterization and Analysis of Hot Carrier Degradation Under DC and Large-Signal RF Stress in a PDSOI Floating-Body NFET-Based Power Amplifier Cell Under WiFi Operating Conditions2
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing2
Simultaneous and Sequential Triggering in Multi-Finger Floating-Base SCRs Depending on TLP Pulse Rise Time2
Simulation Study of Stress Effect on Performance and Design Methodology of Proposed Si/SiGe Integrated Bragg Grating Filter2
Temperature Dependent Reliability of Polysilicon Emitter Bipolar Transistors Under High Current Stress2
Analysis of Floating Limiting Rings Termination Under Repetitive Avalanche Current Stress for 4H-SiC JBS Rectifiers2
Electromigration Performance Improvement of Metal Heaters for Si Photonic Ring Modulators2
Correlation Study of Bulk Si Stress and Lithography Defects Using Polarized Stress Imager2
Defect-Free and Annealing Influences in P3HT Organic Field-Effect Transistor Performance2
Effect of Capped Cu Layer on Protrusion Behaviors of Through Silicon via Copper (TSV-Cu) Under Double Annealing Conditions: Comparative Study2
Mitigation Technique for Single Event Transient via Pulse Quenching2
An Analytical Model of Read-Disturb Failure Time in a Post-Cycling Resistive Switching Memory2
Low-Temperature Deuterium Annealing for the Recovery of Ionizing Radiation-Induced Damage in MOSFETs2
Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications2
Review of Double-Sided Cooling Power Modules for Driving Electric Vehicles2
A VDD Correction Method for Static Stability Test of SRAM Bit Cell2
Stress-Induced Transistor Degradation Studied by an Indentation Approach2
Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays2
Fundamentals of Circuit Failure Analysis Based on Optical Fault Isolation Techniques2
Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory2
Popcorning Failures in Polymer and MnO2 Tantalum Capacitors2
Micro-Compression of Freestanding Electroplated Copper Through-Glass Vias2
Reliability Characterization of a Low-k Dielectric Using Magnetoresistance as a Diagnostic Tool2
Transient Overshoot Voltages During VF-TLP Pulses for Bipolar Devices in the Presence of Lowly Doped Regions2
Thermal Effect on Carbon Nanotube Fiber High-Ampacity Conductors at High Frequencies2
Efficient Majority-Logic Reed-Solomon Decoders for Single Symbol Correction1
New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory1
Immediate Read-After-Write Capability in p-Type Ferroelectric Field-Effect Transistors and Its Evolution With Fatigue Cycling1
Effect of Dummy Gate Bias on Breakdown Voltage and Gate Charge of a Novel In0.53Ga0.47As/InP Trench-Gate Pentode Power Device1
Compact 3D Thermal Model for VLSI and ULSI Interconnect Network Reliability Verification1
SafeDE: A Low-Cost Hardware Solution to Enforce Diverse Redundancy in Multicores1
Lateral and Vertical Gate Oxide Stacking Impact on Noise Margins and Delays for the 8T SRAM Designed With Source Pocket Engineered GaSb/Si Heterojunction Vertical TFET: A Reliability Study1
Process-Voltage-Temperature Variations Assessment in Energy-Aware Resistive RAM-Based FPGAs1
Destructive Testing for Reliability Analysis at High-Power Microwave in GaAs/InGaP Hetero-Junction Bipolar Transistor1
A Study of the Nonlinear Capacitance Variation in Inter Level Copper and Low-k Interconnect Structure1
Time-Dependent Dielectric Breakdown in 45-nm PD-SOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications1
SOI FinFET Design Optimization for Radiation Hardening and Performance Enhancement1
Systematic Unsupervised Recycled Field-Programmable Gate Array Detection1
On-Chip Heater Design and Control Methodology for Reliability Testing Applications Requiring Over 300°C Local Temperatures1
ESD Stress Effect on Failure Mechanisms in GaN-on-Si Power Device1
Micromechanical Adhesion Experiments and Simulation on Cu-Damascene Processed Test Devices1
Integer Codes Correcting Single Errors and Detecting Burst Errors Within a Byte1
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors1
Moisture Dependent Degradation Rate of Silicone in LED Optical Housing Material—Ab-Initio Modelling1
Categorization of PBTI Mechanisms on 4H-SiC MOSFETs by the Stress Gate Voltage and Channel Plane Orientation1
Drain Extended MOS Body Region Engineering for Switching Reliability Under Unclamped Inductive Load Conditions1
A Thermal Circuit Representing Frequency Dependent Dynamic Heating Between Electron and Lattice in SOI-FinFET1
Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements1
Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices1
Reliable Circuit Design Using a Fast Incremental-Based Gate Sizing Under Process Variation1
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by Means of Impedance Spectroscopy1
Investigating 3D NAND Flash Read Disturb Reliability With Extreme Value Analysis1
HEMT Inspired GaN Optical Waveguides: Analysis Under Thermal Stress and Prospects1
Mono-Energetic Proton Induced Damages in SiC Power MOSFETs1
Correlation of HCD and Percolation Paths in FinFETs: Study of RDF and MGG Impacts Through 3-D Particle-Based Simulation1
Strain Modulated Asymmetrical Si/SiGe Superlattice p+-i-n+ Switches for MMW Low-Loss Secure Communication Systems1
Characterization and Image-Based Performance Evaluation on the Longevity of LCDs Under High Temperature and Humid Environment1
A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT1
Optimization of Dual Field Plate AlGaN/GaN HEMTs Using Artificial Neural Networks and Particle Swarm Optimization Algorithm1
LCHC-DFT: A Low-Cost High-Coverage Design-for-Testability Technique to Detect Hard-to-Detect Faults in STT-MRAMs in the Presence of Process Variations1
Effect of Ambient on the Field Emission Induced-Damage in Dielectric-Less MEMS Capacitive Structures1
Eight-Level/Cell Storage by Tuning the Spatial Distribution of Dielectrics in a Tri-Layer ReRAM Cell: Electrical Characteristics and Reliability1
EXT-TAURUM P2T: An Extended Secure CAN-FD Architecture for Road Vehicles1
Investigation of Quantization Effects on RTS Due to Oxide Traps Induced by Channel Hot-Carrier-Stressing in pMOSFETs1
Robustness of Pentacene:MoS2:ZnO Ternary Blend for Optoelectronic Devices1
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data1
Lightweight Read Reference Voltage Calibration Strategy for Improving 3-D TLC NAND Flash Memory Reliability1
Total Ionizing Dose (TID) Impact on Basic Amplifier Stages1
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