IEEE Transactions on Device and Materials Reliability

Papers
(The median citation count of IEEE Transactions on Device and Materials Reliability is 0. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-05-01 to 2026-05-01.)
ArticleCitations
From Mega to nano: Beyond one Century of Vacuum Electronics59
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers55
Editorial34
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators31
Location-Aware Error Correction for Mitigating the Impact of Interconnects on STT-MRAM Reliability30
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data28
Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability28
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization26
Package-Level Electro-Thermal Simulation With Transient Thermal Resistance Model for Surge Stress Failure Analysis of SiC MOSFET23
On the Response Time Constant of Interface Defects in Accumulation22
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module21
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters21
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via20
IEEE Transactions on Device and Materials Reliability Publication Information19
Reliability of Advanced Nodes18
IEEE Transactions on Device and Materials Reliability Publication Information18
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology17
Stability in Electroluminescence from Ag-NSi Schottky Junction LED: Role of Ambient Oxidation16
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI16
Table of Contents16
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition15
IEEE Transactions on Device and Materials Reliability Publication Information15
Research of Single-Event Burnout in P-NiO/n-Ga 2 O 3 Heterojunction Diode15
Degradation Analysis of 14 nm SOI FinFETs by Influence of Hot Carrier Injection and Self-Heating Synergistic Effects15
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes15
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging14
Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs14
Insights Into the Effects of Interface Trap Charges on Electrostatic-Based Magnesium Silicide Tunneling Interface13
Effects of Electrolyte Volume on Electrochemical Migration of Tin in Water Drop Test13
Lifetime Prediction of IGBT by BPNN Based on Improved Dung Beetle Optimization Algorithm13
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs12
Table of Contents12
IEEE Transactions on Device and Materials Reliability Publication Information12
Impact of Substrate connection on Dynamic-R ON drift of 650V normally-off Monolithic Bidirectional AlGaN/GaN HEMT12
Electrical Switching Safe Operation Area on GaN Bidirectional Switches Under Hard-Switching Conditions by Multiple Pulse Test11
Member Get-A-Member (MGM) Program11
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors11
TechRxiv: Share Your Preprint Research with the World!11
A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness11
Introducing IEEE Collabratec11
Avalanche Failure Mechanisms of 1200-V/40-A 4H-SiC Junction Barrier Schottky Diodes with Various Epilayer Defects10
A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability10
IEEE Transactions on Device and Materials Reliability Information for Authors10
A Lifetime Prediction Method of IGBT Based on Phased Nonlinear Wiener Process10
Non-Traditional Operational Mechanisms of NbO x -Based Threshold Switching Devices Used on On-Chip ESD Protection10
IEEE Transactions on Device and Materials Reliability Publication Information10
Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions10
Reliability Analysis of IGZO Thin Film Transistor for Wearable Biosensing Applications10
Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method10
Predicting Failure Distributions of SRAM Arrays by Using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning10
Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET9
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability9
Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects9
Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor9
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design9
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Open Model Interface Assisted NBTI-Aware Design With Dual-V th Logic Synthesis Strategy for Reliability Improvement9
TechRxiv: Share Your Preprint Research with the World!9
Aging-Induced Mg Cluster Observation in GaN-Based Lasers by Atom Probe Tomography9
Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications9
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles8
Table of Contents8
Design of Robust SRAM Cell With Enhanced Soft-Error Hardening for Radiation-Prone Applications8
NAVIgator under Fire: Characterizing Voltage Limits and Soft Error Resilience of AMD NAVI GPUs8
Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter8
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs8
Mitigating the Process Variations in Negative Capacitance Junctionless Device and Circuit8
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation8
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits8
Proton Irradiation Effects on Single Event Burnout in AlGaN/GaN HEMTs8
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance8
Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress7
Call for Nominations for Editor-in-Chief IEEE Electron Device Letters7
TCAD Investigation on a Novel SiC Trench MOSFET With Integrated N + -PolySi/SiC Heterojunction Diode for Improved Third-Quadrant and High-Temperature7
A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems7
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Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks7
Semi-empirical Modeling of Hot Carrier Degradation in 12 nm FinFET LDMOS devices7
Exploring the Optimal Solution for Graphene-Based Microstrip Line Attenuators7
TechRxiv: Share Your Preprint Research with the World!7
SiC MOSFET Gate-Oxide and SiC/SiO 2 Interface Defect Charge Movement Based on the Hi-Lo C ISS7
Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y2O3 Gate Dielectric7
Error-Corrected RRAM-Based Compute-in-Memory Accelerator Using Voltage-Clamp Current Mirror6
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges6
Key Factors Affecting Dynamic Reliability in GaN HEMTs and How Can They Be Mitigated?6
IEEE Transactions on Device and Materials Reliability Publication Information6
Effects of Electron Irradiation and Thermal Cycling on Electrical Properties of SiC MOSFET6
Lifetime Prediction Method for IGBT Modules Under Combined Power Cycling–Vibration Conditions6
Analysis and Structural Mitigation of Trapping-State-Trap Induced Drain Leakage Current in Buried-Channel-Array-Transistor6
Investigation of Electrical Breakdown in AlGaN/GaN/AlN HEMTs Through Nanoscale Analysis and Physics-Based Modeling6
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET6
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing6
Analytical Model for Cu Interconnect Lifetimes Under Combined Thermomigration and Electromigration Stress6
High Gate Reliability and Breakdown Voltage p-GaN HEMTs Based on Post-Annealing-Free Oxygen Plasma Treatment6
An Efficient Modeling Approach for Electrothermal Migration Analysis of On-Chip Interconnects6
Influence of Critical Working Conditions on Stability of Varistor Characteristics6
Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field6
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI5
Call for Nominations for Editor-in-Chief5
Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique5
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices5
Wide Band Gap Semiconductors for Automotive Applications5
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate5
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method5
Influence of Phase Coarsening on Inhomogeneous Deformation and Fracture Behavior in Sn–Bi Solder Interconnects5
IEEE Transactions on Device and Materials Reliability Information for Authors5
Memristive Switching Behavior of MoO3 Decorated PSi Heterostructure and Impact of Temperature on Device Reliability5
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing5
A Highly Reliable Dual-Node-Upset-Tolerant 20T Radiation Hardened SRAM Cell for Aerospace Applications5
Comparison of Different Input Data for the Prediction of LED Solder Joints Using Artificial Neural Networks4
Reliability of Advanced Nodes4
Metastable Operating Stability of Perovskite/Silicon Tandem Solar Cell Modules4
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"4
Fast Heater‑Based NBTI Resolves the Reverse Antenna Effect in PID‑Degraded High‑k and SiO 2 pMOSFETs4
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure4
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests4
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators4
Analysis of Multicrystalline Si Solar Cell Degradation Due to Reverse Bias and High Temperature Aging4
SafeHDC: Concurrent Uncertainty and Fault Detection in Hyperdimensional Computing4
Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy4
Front Cover4
IEEE Transactions on Device and MaterialsReliability publication information4
Modeling Degradation Kinetics of FAPbI₃ Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects4
IEEE Transactions on Device and Materials Reliability Information for Authors4
Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array4
Digital Probing of Activation Energy for Evaluating Reliability in 2-D and 3-D NAND Flash Memory4
ESR Modeling for Atmospheric Corrosion Behavior of Metallized Film Capacitors4
DAAS: Differential Aging-Aware STA for Precise Timing Closure With Reduced Design Margin4
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints4
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications4
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN4
Table of Contents4
Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors Under Reverse Pulse Electrical Stress Using the Voltage-Transient Method3
Correlation of HCD and Percolation Paths in FinFETs: Study of RDF and MGG Impacts Through 3-D Particle-Based Simulation3
QRAM4Space: Dual-Node Radiation-Tolerant Quadruple SRAM for Space Systems3
Table of Contents3
2023 Index IEEE Transactions on Device and Materials Reliability Vol. 233
Sensitivity of Logic Cells to Laser Fault Injections: An Overview of Experimental Results for IHP Technologies3
Study on Electromagnetic Pulse Damage of 22nm FDSOI in Radiation Environment3
Resistance Degradation of Unintentionally Doped Single Crystal BaTiO 33
All-Regions Damage Extraction Method for SiC IGBTs Based on C-V Curves3
Impact of EP-CG Interlayer Dielectric on Performance of L-Shaped Split-Gate Flash Memory3
Microstructural Evolution of Gate Oxide in SiC Power MOSFETs Under Heavy-Ion Irradiation3
Prediction of Crack Initiation at Die Corner of Molded Underfill Flip-Chip Packages Under Thermal Load by New Criteria3
Characterization and Analysis of Hot Carrier Degradation Under DC and Large-Signal RF Stress in a PDSOI Floating-Body NFET-Based Power Amplifier Cell Under WiFi Operating Conditions3
Reliability Analysis of GaAs-PIN Limiter Under Ultra-Wideband Pulse Radiation3
A Low Cost Triple-Node-Upset Self-Recoverable Latch Design for Nanoscale CMOS3
Total-Ionizing-Dose Radiation Effect on Current Gain for Bipolar Junction Transistor Based 18 V BCD technology3
On-Silicon Characterization of CDM-Like Stress in Long Interconnects Using vf-TLP in Nanometric ICs3
Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs3
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Bandgap Semiconductor Devices for RF and Power Applications"3
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part II—Reliability3
Weak Snapback Silicon Controlled Rectifier ESD Device With Double Snapback Characteristics3
New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory3
Exploring Non-TAP Interfaces for Efficient and Secure Access to IJTAG Network3
An Efficient Dynamic Threshold Voltage Detection Scheme for Improving 3-D NAND Flash Reliability3
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"3
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design3
EXT-TAURUM P2T: An Extended Secure CAN-FD Architecture for Road Vehicles3
Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM2
Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density2
Comparative Analysis of SGTMOS Degradation Under Repeated Off-State Avalanche and Short Circuit Current Pulses2
Capacitor-Coupled Offset-Canceled DRAM Sense Amplifier With Ultralow Offset Voltage and Hidden Cancelation Time2
Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET2
Reliability and Optimization Simulation Study of Zero-Temperature-Delay Point in Digital Circuits for Advanced Technology2
Improvement of Encapsulation Technique of Organic Photovoltaics by UV-Curable Adhesive2
SafeDE: A Low-Cost Hardware Solution to Enforce Diverse Redundancy in Multicores2
Reliability Test of 21% Efficient Flexible Perovskite Solar Cell Under Concave, Convex and Sinusoidal Bending2
Thermal Runaway in Thin Film PV: temperature profile modeling2
Table of Contents2
Comparative Study on the Performance of Digital Low-Light EBAPS Devices Based on Different Multi-Alkali Photocathode Materials2
A Comprehensive Modeling Framework for Charge-Sharing and Bias-Dependent Single Event Transient Prediction in FinFETs2
Board Level-Component Solder Joints Normalized Crack Severity Index of Solid-State Drive With Different Reliability Temperature Cycle Test Profiles2
Resilience via Recovery: Gamma-Irradiated Cascode GaN HEMTs Under Electron Wind Force2
Impact of Post-Metallization Annealing on the Reliability of Barrierless Mo Word Lines2
Predicting the Degradation and Recovery Trends of the Photovoltaic Efficiency of Sb₂Se₃ Antimony Solar Cells2
IEEE Transactions on Device and Materials Reliability Information for Authors2
SiC Damage Induced by Heavy Ion Irradiation and Post-Gate Stress in SiC MOSFETs2
2024 Index IEEE Transactions on Device and Materials Reliability Vol. 242
Effect of Gamma Radiation on Static DC, Reliability, and RF Performance of Submicron GaN-on-Si RF MIS-HEMTs With In Situ SiN2
Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests2
Copper Line Resistance Degradation Caused by Unidirectional and Bidirectional Pulsed Currents2
Drain Field Plate Effects in p-GaN HEMTs During Surge Voltage Hard Switching2
Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5 nm Node Junctionless Multi-Nanowire FETs2
Study on the Effect of Cu Buffer and Cu-Wire Bonds on SiC Device Performance2
Deep Learning-Driven Ensemble Learning for Solar PV Faults Detection Under Low Irradiance Condition2
Investigation on Traps Dynamics & Negative Bias Stress in D-Mode GaN-on-Si Power MIS HEMTs Under High-Temperature2
On the Reliability of Complementary Field Effect Transistor: Unveiling the Role of Grain Granularities and Random Fluctuations2
Research on the Mechanism of Electrical Erosion Accelerating Failure in High-Current Pulse Thyristor-Based Switches2
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices2
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Statistical Model and Transistor Size Effect of Hot Carrier Injection for Stability Reinforced SRAM Physically Unclonable Function2
Performance-Limiting Trapping Effects in n-Type Ga 2 O 3 Schottky Barrier Diodes2
Investigation of Switching Characteristics Degradation of GaN HEMT Under Power Cycling Aging1
Multiple Phase Change Materials Integrated Into Power Module for Normal and High Current Reliability Enhancement1
The Achievement of Pulse Laser Deposited Amorphous P-Type N-Doped Ga₂O₃ for Applying in Thin Film Transistor and Homojunction Diode1
A Gate-Level SER Estimation Tool With Event-Driven Dynamic Timing and SET Height Consideration1
The Failure Mechanism of Internal Circuit During ESD Striking a Power to Another Power1
Investigating the Arc-Shaped Kink Drain Voltage of Drain Current With Capacitance-Voltage Measurement Method in GaN HEMTs1
IEEE Transactions on Device and Materials Reliability Publication Information1
Numerical Simulation of Trapped Hole Lateral Migration and Induced Threshold Voltage Retention Loss in a SONOS Flash Memory1
Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model1
AdAM: Adaptive Approximate Multiplier for Fault Tolerance in DNN Accelerators1
IEEE Transactions on Device and Materials Reliability Publication Information1
IEEE Transactions on Device and Materials Reliability Publication Information1
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Thermal Stress Impact on Electrical Conductivity and Microstructure of Thin Aluminum Films Deposited on Polyethylene Terephthalate Substrates1
A Novel Lifetime Estimation Method and Structural Optimization Design for Film Capacitors in EVs Considering Material Aging and Power Losses1
Mechanism and Quantitative Modeling of the SRAM Soft Error Induced by Space Electrostatic Discharge1
Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by Means of Impedance Spectroscopy1
Reliability Analysis of MOS Devices Using Burst Pulse CV Measurement Technique1
Impact of Total Ionizing Dose on the Electrical Performance of Silicon Carbide MOSFET1
IEEE Transactions on Device and Materials Reliability information for authors1
Improving Single-Event Effect Performance of SiC MOSFET by Excess Hole Extraction1
Next-Generation High-Density PCB Development by Fan-Out RDL Technology1
Table of Contents1
An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT1
On-Chip Heater Design and Control Methodology for Reliability Testing Applications Requiring Over 300°C Local Temperatures1
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers1
Radiation Hardened Domino Logic-Based Schmitt Trigger Circuit With Improved Noise Immunity1
IEEE Transactions on Device and Materials Reliability Information for Authors1
Moisture Dependent Degradation Rate of Silicone in LED Optical Housing Material—Ab-Initio Modelling1
A Process-Robust Split-Gate eFlash Memory with Spacer-Defined Floating Gate in 55-nm Node1
IEEE Transactions on Device and Materials Reliability Information for Authors1
Bridging the Data Gap in Photovoltaics with Synthetic Data Generation1
Design and Fabrication of FS-IGBTs With Enhanced Ruggedness and the Influence of Circuit Parameters on Short-Circuit1
2025 Index IEEE Transactions on Device and Materials Reliability Vol. 251
A Low-Area Overhead and Low-Delay Triple-Node-Upset Self-Recoverable Design Based on Stacked Transistors1
2022 Index IEEE Transactions on Device and Materials Reliability Vol. 221
Assessing the Reliability of DRAM CMOS Periphery: Comparing AC and DC Conditions for BTI and TDDB1
Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements1
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Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications1
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications1
An Improved Thermal Network Model of Press-Pack IGBT Modules Considering Contact Surface Damage1
Investigation of the Mechanism of Mixed-Gas Plasma Modulation of Indium Oxide Thin-Film Transistor Performance1
Die-Attach Influence on Thermal/Electrical Parameters of GaN RF Device1
Effect of Large Amplitude Thermal Cycles on Power Assemblies Based on Ceramic Heat Sink and Multilayer Pressureless Silver Sintering1
Enhanced Stability in Sn-Doped InGaZnO TFTs: The Critical Role of Channel Length and the Dual Effect of Lateral Field Revealed by eMSM Analysis1
Table of Contents1
Special Issue on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS 2023) in the IEEE Transactions on Device and Materials Reliability1
Drain Extended MOS Body Region Engineering for Switching Reliability Under Unclamped Inductive Load Conditions1
Characterization of Electromagnetic Susceptibility in Optocouplers Exposed to Different Interference Waveforms1
Experimental Comparison of TID Hardness in MOSFETs Implemented With the Enclosed, Diamond (Hexagonal Gate), and Rectangular Layout Styles1
A DICE Flip-Flop Design by Resetting Redundancy Hardening for Single Event Upset Tolerance1
Investigation of Single-Event Burnout in Laterally-Diffused Metal-Oxide Semiconductor for Power Modulation Circuits1
Total Ionizing Dose (TID) Impact on Basic Amplifier Stages0
H2C-TM: A Hybrid High Coverage Test Method for Improving the Detection of HtD Faults in STT-MRAMs0
IEEE Transactions on Device and Materials Reliability Publication Information0
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