IEEE Transactions on Device and Materials Reliability

Papers
(The median citation count of IEEE Transactions on Device and Materials Reliability is 0. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-09-01 to 2025-09-01.)
ArticleCitations
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers50
From Mega to nano: Beyond one Century of Vacuum Electronics48
CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations34
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via27
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters25
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization24
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data22
Sintered Silver Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability22
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators22
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module21
IEEE Transactions on Device and Materials Reliability Publication Information20
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes20
Reliability of Advanced Nodes18
IEEE Transactions on Device and Materials Reliability Publication Information17
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition16
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI15
Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode15
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology15
Mitigation Technique for Single Event Transient via Pulse Quenching14
Lifetime Prediction of IGBT by BPNN Based on Improved Dung Beetle Optimization Algorithm14
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging14
Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs14
Simulation Study of Stress Effect on Performance and Design Methodology of Proposed Si/SiGe Integrated Bragg Grating Filter13
Thermal Effect on Carbon Nanotube Fiber High-Ampacity Conductors at High Frequencies13
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs13
Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs13
Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs13
IEEE Transactions on Device and Materials Reliability Publication Information13
Member Get-A-Member (MGM) Program12
Degradation Analysis of 14 nm SOI FinFETs by Influence of Hot Carrier Injection and Self-Heating Synergistic Effects12
TechRxiv: Share Your Preprint Research with the World!12
Table of Contents12
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors12
Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection12
Introducing IEEE Collabratec12
Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method11
IEEE Transactions on Device and Materials Reliability Information for Authors11
A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness11
A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability11
Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process10
Compact Modeling of Process Variation and Reliability Predictions for Nanosheet Gate-All-Around FET10
Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions10
A Lifetime Prediction Method of IGBT Based on Phased Nonlinear Wiener Process10
Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects10
Predicting Failure Distributions of SRAM Arrays by Using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning10
IEEE Transactions on Device and Materials Reliability Publication Information10
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design10
From Mega to nano: Beyond one Century of Vacuum Electronics9
Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors9
TechRxiv: Share Your Preprint Research with the World!9
Aging-Induced Mg Cluster Observation in GaN-Based Lasers by Atom Probe Tomography9
Design, Fabrication and Characterization of Single-Crystalline Graphene gNEMS ESD Switches for Future ICs9
Erratum to “Reliability Characterization of a Low-k Dielectric Using Magnetoresistance as a Diagnostic Tool”9
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability9
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles9
An Analytical Model of Read-Disturb Failure Time in a Post-Cycling Resistive Switching Memory9
Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications9
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Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance8
Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter8
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A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems8
Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs8
Exploring the Optimal Solution for Graphene-Based Microstrip Line Attenuators8
Development of Accelerated Life Testing Apparatus for Light-Emitting Diode Therapy8
Open Model Interface Assisted NBTI-Aware Design With Dual-Vth Logic Synthesis Strategy for Reliability Improvement8
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs8
Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress8
Table of Contents8
Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor8
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation8
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits8
Reflow Residues on Printed Circuit Board Assemblies and Interaction With Humidity7
Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory7
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Influence of Critical Working Conditions on Stability of Varistor Characteristics7
TechRxiv: Share Your Preprint Research with the World!7
Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y2O3 Gate Dielectric7
Proton Irradiation Effects on Single Event Burnout in AlGaN/GaN HEMTs7
Analysis of Floating Limiting Rings Termination Under Repetitive Avalanche Current Stress for 4H-SiC JBS Rectifiers7
IEEE Transactions on Device and MaterialsReliability publication information7
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks7
IEEE Transactions on Device and Materials Reliability Publication Information6
Wide Band Gap Semiconductors for Automotive Applications6
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges6
Effects of Electron Irradiation and Thermal Cycling on Electrical Properties of SiC MOSFET6
Call for Nominations for Editor-in-Chief6
Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field6
Lifetime Prediction Method For IGBT Modules Under Combined Power Cycling–Vibration Conditions6
IEEE Transactions on Device and Materials Reliability Information for Authors6
Call for Nominations for Editor-in-Chief IEEE Electron Device Letters6
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing6
Introducing IEEE Collabratec6
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET6
Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array5
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate5
Metallization Reliability of GaN-Based High-Voltage Light-Emitting Diodes5
Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique5
Table of Contents5
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices5
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI5
Lateral and Vertical Gate Oxide Stacking Impact on Noise Margins and Delays for the 8T SRAM Designed With Source Pocket Engineered GaSb/Si Heterojunction Vertical TFET: A Reliability Study5
Influence of Phase Coarsening on Inhomogeneous Deformation and Fracture Behavior in Sn–Bi Solder Interconnects5
Analysis of Multicrystalline Si Solar Cell Degradation Due To Reverse Bias and High Temperature Aging5
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing5
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method5
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators5
Memristive Switching Behavior of MoO3 Decorated PSi Heterostructure and Impact of Temperature on Device Reliability5
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN5
DAAS: Differential Aging-Aware STA for Precise Timing Closure With Reduced Design Margin4
2023 Index IEEE Transactions on Device and Materials Reliability Vol. 234
Front Cover4
IEEE Transactions on Device and Materials Reliability information for authors4
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure4
Soft-Error-Aware SRAM for Terrestrial Applications4
Power Durability Enhancement and Failure Analysis of TC-SAW Filter With Ti/Cu/Ti/Cu/Ti Electrodes4
Correlation of HCD and Percolation Paths in FinFETs: Study of RDF and MGG Impacts Through 3-D Particle-Based Simulation4
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part II—Reliability4
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"4
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications4
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints4
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs4
Modeling Degradation Kinetics of FAPbI₃ Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects4
Prediction of Crack Initiation at Die Corner of Molded Underfill Flip-Chip Packages Under Thermal Load by New Criteria4
IEEE Transactions on Device and MaterialsReliability publication information4
IEEE Transactions on Device and Materials Reliability Information for Authors4
Metastable Operating Stability of Perovskite/Silicon Tandem Solar Cell Module4
ESR Modeling for Atmospheric Corrosion Behavior of Metallized Film Capacitors4
Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy4
Characterization and Analysis of Hot Carrier Degradation Under DC and Large-Signal RF Stress in a PDSOI Floating-Body NFET-Based Power Amplifier Cell Under WiFi Operating Conditions3
Study on Electromagnetic Pulse Damage of 22nm FDSOI in Radiation Environment3
All-Regions Damage Extraction Method for SiC IGBTs Based on C-V Curves3
Member Get-A-Member (MGM) Program3
Reliability Characterization of a Low-k Dielectric Using Magnetoresistance as a Diagnostic Tool3
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"3
Statistical Model and Transistor Size Effect of Hot Carrier Injection for Stability Reinforced SRAM Physically Unclonable Function3
Robustness of Pentacene:MoS2:ZnO Ternary Blend for Optoelectronic Devices3
QRAM4Space: Dual-Node Radiation-Tolerant Quadruple SRAM for Space Systems3
Weak Snapback Silicon Controlled Rectifier ESD Device With Double Snapback Characteristics3
Microstructural Evolution of Gate Oxide in SiC Power MOSFETs Under Heavy-Ion Irradiation3
Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs3
Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density3
Sensitivity of Logic Cells to Laser Fault Injections: An Overview of Experimental Results for IHP Technologies3
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design3
Exploring Non-TAP Interfaces for Efficient and Secure Access to IJTAG Network3
Table of Contents3
Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors Under Reverse Pulse Electrical Stress Using the Voltage-Transient Method3
New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory3
Reliability Analysis of GaAs-PIN Limiter Under Ultra-Wideband Pulse Radiation3
A Low Cost Triple-Node-Upset Self-Recoverable Latch Design for Nanoscale CMOS3
Improvement of Encapsulation Technique of Organic Photovoltaics by UV-Curable Adhesive3
Board Level-Component Solder Joints Normalized Crack Severity Index of Solid-State Drive With Different Reliability Temperature Cycle Test Profiles3
An Efficient Dynamic Threshold Voltage Detection Scheme for Improving 3-D NAND Flash Reliability3
EXT-TAURUM P2T: An Extended Secure CAN-FD Architecture for Road Vehicles3
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Bandgap Semiconductor Devices for RF and Power Applications"3
Monitoring Initial Solder Layer Degradation in a Multichip IGBT Module via Combined TSEPs2
Study on the Effect of Cu Buffer and Cu-wire Bonds on SiC Device Performance2
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Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM2
Thermal Runaway in Thin Film PV: temperature profile modeling2
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices2
Design and Fabrication of FS-IGBTs With Enhanced Ruggedness and the Influence of Circuit Parameters on Short-Circuit2
2024 Index IEEE Transactions on Device and Materials Reliability Vol. 242
Aging Monitoring Method of Bond Wires-Based on Phase-Frequency Characteristics of Differential Mode Conducted Interference Signal for IGBT Module2
Research on the Mechanism of Electrical Erosion Accelerating Failure in High-Current Pulse Thyristor-Based Switches2
Reliability Test of 21% Efficient Flexible Perovskite Solar Cell Under Concave, Convex and Sinusoidal Bending2
Eight-Level/Cell Storage by Tuning the Spatial Distribution of Dielectrics in a Tri-Layer ReRAM Cell: Electrical Characteristics and Reliability2
Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5 nm Node Junctionless Multi-Nanowire FETs2
Comparative Analysis of SGTMOS Degradation Under Repeated Off-State Avalanche and Short Circuit Current Pulses2
SafeDE: A Low-Cost Hardware Solution to Enforce Diverse Redundancy in Multicores2
A Novel Lifetime Estimation Method and Structural Optimization Design for Film Capacitors in EVs Considering Material Aging and Power Losses2
Predicting the Degradation and Recovery Trends of the Photovoltaic Efficiency of Sb₂Se₃ Antimony Solar Cells2
Effect of Gamma Radiation on Static DC, Reliability, and RF Performance of Submicron GaN-on-Si RF MIS-HEMTs With In Situ SiN2
Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests2
Table of Contents2
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Drain Extended MOS Body Region Engineering for Switching Reliability Under Unclamped Inductive Load Conditions2
A 10T Soft-Error-Immune SRAM With Multi-Node Upset Recovery for Low-Power Space Applications2
Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET2
Reliability and Optimization Simulation Study of Zero-Temperature-Delay Point in Digital Circuits for Advanced Technology2
Moisture Dependent Degradation Rate of Silicone in LED Optical Housing Material—Ab-Initio Modelling1
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Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications1
A Low-Area Overhead and Low-Delay Triple-Node-Upset Self-Recoverable Design Based on Stacked Transistors1
2022 Index IEEE Transactions on Device and Materials Reliability Vol. 221
On-Chip Heater Design and Control Methodology for Reliability Testing Applications Requiring Over 300°C Local Temperatures1
Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications1
Effect of Titanium-Polymer Interactions on Adhesion of Polymer-Copper Redistribution Layers in Advanced Packaging1
Special Issue on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS 2023) in the IEEE Transactions on Device and Materials Reliability1
BTI-Aware Timing Reliability Improvement of Pulsed Flip-Flops in Nano-Scale CMOS Technology1
Investigating the Arc-Shaped Kink Drain Voltage of Drain Current With Capacitance-Voltage Measurement Method in GaN HEMTs1
Effect of Wiring Density and Pillar Structure on Chip Packaging Interaction for Mixed-Signal Cu Low k Chips1
Improving Single-Event Effect Performance of SiC MOSFET by Excess Hole Extraction1
Mechanism and Quantitative Modeling of the SRAM Soft Error Induced by Space Electrostatic Discharge1
Assessing the Reliability of DRAM CMOS Periphery: Comparing AC and DC conditions for BTI and TDDB1
Investigation of Switching Characteristics Degradation of GaN HEMT Under Power Cycling Aging1
IEEE Transactions on Device and Materials Reliability Information for Authors1
Investigation on Traps Dynamics & Negative Bias Stress in D-Mode GaN-on-Si Power MIS HEMTs Under High-Temperature1
IEEE Transactions on Device and Materials Reliability Publication Information1
Next-Generation High-Density PCB Development by Fan-Out RDL Technology1
Die-Attach Influence on Thermal/Electrical Parameters of GaN RF Device1
The Failure Mechanism of Internal Circuit During ESD Striking a Power to Another Power1
Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements1
Multiple Phase Change Materials Integrated Into Power Module for Normal and High Current Reliability Enhancement1
Thermal Stress Impact on Electrical Conductivity and Microstructure of Thin Aluminum Films Deposited on Polyethylene Terephthalate Substrates1
Table of Contents1
An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT1
Investigation of the Mechanism of Mixed-gas Plasma Modulation of Indium Oxide Thin-Film Transistor Performance1
IEEE Transactions on Device and Materials Reliability Publication Information1
Bridging the Data Gap in Photovoltaics with Synthetic Data Generation1
Effect of Large Amplitude Thermal Cycles on Power Assemblies Based on Ceramic Heat Sink and Multilayer Pressureless Silver Sintering1
Table of Contents1
A Comprehensive Modeling Framework for Charge-Sharing and Bias-Dependent Single Event Transient Prediction in FinFETs1
Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model1
AdAM: Adaptive Approximate Multiplier for Fault Tolerance in DNN Accelerators1
Life Cycle Assessment of a Lead-Free Cesium Titanium (IV) Single and Mixed Halide Perovskite Solar Cell Based 1 m² PV Module1
An Improved Thermal Network Model of Press-Pack IGBT Modules Considering Contact Surface Damage1
The Achievement of Pulse Laser Deposited Amorphous P-Type N-Doped Ga₂O₃ for Applying in Thin Film Transistor and Homojunction Diode1
Correction Masking: A Technique to Implement Efficient SET Tolerant Error Correction Decoders1
Probing Interface Trapping Characteristics of Au/β-Ga2O3 Schottky Barrier Diode on Si (100)1
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers1
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A Gate-Level SER Estimation Tool With Event-Driven Dynamic Timing and SET Height Consideration1
A DICE Flip-Flop Design by Resetting Redundancy Hardening for Single Event Upset Tolerance1
Radiation Hardened Domino Logic-Based Schmitt Trigger Circuit With Improved Noise Immunity1
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers0
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO₂ and HfO₂ Stacks0
Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage0
An Empirical Study on Fault Detection and Root Cause Analysis of Indium Tin Oxide Electrodes by Processing S-Parameter Patterns0
Front Cover0
Utilizing Two Three-Transistor Structures for Designing Radiation Hardened Circuits0
IEEE Transactions on Device and Materials Reliability Publication Information0
Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices0
Electromigration Performance Improvement of Metal Heaters for Si Photonic Ring Modulators0
IEEE Transactions on Device and Materials Reliability Information for Authors0
Total Ionizing Dose (TID) Impact on Basic Amplifier Stages0
Solder Dewetting and Reliability Challenges in Microbumps Due to NCF Entrapment0
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TechRxiv: Share Your Preprint Research with the World!0
Side-Channel Attack Resilient RHBD 12T SRAM Cell for Secure Nuclear Environment0
A Thermal Circuit Representing Frequency Dependent Dynamic Heating Between Electron and Lattice in SOI-FinFET0
Table of Contents0
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Highly Reproducible and Reliable Methanol Sensor Based on Hydrothermally Grown TiO2 Nanoparticles0
ESD Stress Effect on Failure Mechanisms in GaN-on-Si Power Device0
Call for papers: Special issue on Solid-State Image Sensors0
Impact of Electro-Thermal Transport on HCI and BTI Lifetime of Twin Nanowire FETs: Different Operational Modes0
Time-Dependent Dielectric Breakdown in 45-nm PD-SOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications0
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors—An Analytical Approach0
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