IEEE Transactions on Device and Materials Reliability

Papers
(The median citation count of IEEE Transactions on Device and Materials Reliability is 0. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-05-01 to 2025-05-01.)
ArticleCitations
[Front cover]48
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers40
IEEE Robert Bosch Micro and Nano Electro Mechanical Systems Award37
From Mega to nano: Beyond one Century of Vacuum Electronics26
CD-DFT: A Current-Difference Design-for-Testability to Detect Short Defects of STT-MRAM Under Process Variations25
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data22
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via22
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters22
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization20
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module19
IEEE Transactions on Device and Materials Reliabilityinformation for authors18
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators18
IEEE Transactions on Device and Materials Reliability Publication Information17
Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs17
IEEE Transactions on Device and Materials Reliability Publication Information16
Machine Learning Approach for Prediction of Point Defect Effect in FinFET16
Workload-Aware Electromigration Analysis in Emerging Spintronic Memory Arrays15
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI14
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology13
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes12
Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs12
Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode12
On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors12
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition12
Improving Breakdown Voltage in AlGaN/GaN Metal-Insulator-Semiconductor HEMTs Through Electric-Field Dispersion Layer Material Selection11
Thermal Effect on Carbon Nanotube Fiber High-Ampacity Conductors at High Frequencies11
Mitigation Technique for Single Event Transient via Pulse Quenching11
Fault Modeling and Test Algorithm Development Framework for Gate-All-Around SRAMs10
IEEE Transactions on Device and Materials Reliability Publication Information10
Member Get-A-Member (MGM) Program10
Introducing IEEE Collabratec10
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging10
Table of Contents10
TechRxiv: Share Your Preprint Research with the World!10
Simulation Study of Stress Effect on Performance and Design Methodology of Proposed Si/SiGe Integrated Bragg Grating Filter10
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors10
Impact of Bias Temperature Stress on IGZO/Ni/IGZO Steep Subthreshold Vertical Current Driver Fabricated at Room Temperature10
IEEE Transactions on Device and Materials Reliability Publication Information9
Reliability and Characterization of Nanosilver Joints Prepared by a Time-Reduced Sintering Process9
A Novel Dual-Mode Dual Trench MOSFET With Self-Adjustable Field Plate for Low EMI Noise and High Dynamic Avalanche Robustness9
Impact of Pulse Voltage Stress on the Reliability of Ferroelectric Thin-Film Transistor9
IEEE Transactions on Device and Materials Reliability Information for Authors9
A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability9
Degradation Behavior and Mechanism of SONOS FLASH by Total Ionization Dose Effects9
Predicting Failure Distributions of SRAM Arrays by Using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning9
Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors8
Design, Fabrication and Characterization of Single-Crystalline Graphene gNEMS ESD Switches for Future ICs8
TechRxiv: Share Your Preprint Research with the World!8
Designing and Reliability Analysis of Radiation Hardened Stacked Gate Junctionless FinFET and CMOS Inverter8
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design8
An Analytical Model of Read-Disturb Failure Time in a Post-Cycling Resistive Switching Memory8
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability8
Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation8
From Mega to nano: Beyond one Century of Vacuum Electronics8
Erratum to “Reliability Characterization of a Low-k Dielectric Using Magnetoresistance as a Diagnostic Tool”8
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Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications8
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Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs7
Negative Bias Temperature Instability in Top-Gated Carbon Nanotube Thin Film Transistors With Y2O3 Gate Dielectric7
Reliability of VO textsubscript 2-Based mmWave Switches Under 100 Million Thermal Cycles7
A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems7
Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs7
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks7
Development of Accelerated Life Testing Apparatus for Light-Emitting Diode Therapy7
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance7
Evaluations of Gate Oxide Reliability in SiC MOSFETs Under Extremely High Gate Voltage Stress7
FPGA Assessment Methodology of Adverse X-Ray Effects on Secure Digital Circuits7
Analysis of Floating Limiting Rings Termination Under Repetitive Avalanche Current Stress for 4H-SiC JBS Rectifiers6
TechRxiv: Share Your Preprint Research with the World!6
Exploiting Resistance Drift Characteristics to Improve Reliability of LDPC-Assisted Phase-Change Memory6
Reflow Residues on Printed Circuit Board Assemblies and Interaction With Humidity6
TechRxiv: Share Your Preprint Research with the World!6
Blank Page6
Influence of Critical Working Conditions on Stability of Varistor Characteristics6
Negative Capacitance Vertical Dopingless TFET and Its Analog/RF Analysis Using Interface Trap Charges6
Table of contents6
IEEE Transactions on Device and MaterialsReliability publication information6
Research of Single-Event Burnout in 1.2-kV Rated CoolSiC Trench MOSFET6
Wide Band Gap Semiconductors for Automotive Applications5
White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate5
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices5
Lateral and Vertical Gate Oxide Stacking Impact on Noise Margins and Delays for the 8T SRAM Designed With Source Pocket Engineered GaSb/Si Heterojunction Vertical TFET: A Reliability Study5
Systematic Reliability Evaluation of FPGA Implemented CNN Accelerators5
Call for Nominations for Editor-in-Chief IEEE Transactions on Semiconductor Manufacturing5
IEEE Transactions on Device and Materials Reliability Information for Authors5
Introducing IEEE Collabratec5
Irradiation-Induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN5
Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing5
Design of Highly Reliable 14T and 16T SRAM Cells Combined With Layout Harden Technique5
Memristive Switching Behavior of MoO3 Decorated PSi Heterostructure and Impact of Temperature on Device Reliability5
Comprehensive TCAD-Based Single Event Effect Study of TFET-Based 1T DRAM and Crossbar Memory Array5
Metallization Reliability of GaN-Based High-Voltage Light-Emitting Diodes5
IEEE Transactions on Device and Materials Reliability Publication Information5
Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI5
Trap Location and Stress Degradation Analysis of GaN High Electron Mobility Transistors Based on the Transient Current Method5
Table of Contents5
Call for Nominations for Editor-in-Chief5
Radiation Hardened SOI LDMOS With Dual P-Type Layers Shielding Irradiation Charge Field5
An Effective Method to Identify Microarchitectural Vulnerabilities in GPUs4
Failure Mechanisms of Fluorine-Doped Tin Oxide Thin Films in Glass and Reliability Tests4
Modeling Degradation Kinetics of FAPbI3 Perovskite Solar Cells: Impact of Microstructural and Optoelectronic Defects4
IEEE Transactions on Device and MaterialsReliability publication information4
Power Durability Enhancement and Failure Analysis of TC-SAW Filter With Ti/Cu/Ti/Cu/Ti Electrodes4
New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory4
ESR Modeling for Atmospheric Corrosion Behavior of Metallized Film Capacitors4
IEEE Transactions on Device and Materials Reliability information for authors4
Soft-Error-Aware SRAM for Terrestrial Applications4
Single-Event Burnout Hardening 4H-SiC UMOSFET Structure4
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"4
Characterization and Analysis of Hot Carrier Degradation Under DC and Large-Signal RF Stress in a PDSOI Floating-Body NFET-Based Power Amplifier Cell Under WiFi Operating Conditions4
Front Cover4
IEEE Transactions on Device and Materials Reliability Information for Authors4
Effect of Aging Temperature on the Fatigue Resistance and Shear Strength of SAC305 Solder Joints4
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications4
2023 Index IEEE Transactions on Device and Materials Reliability Vol. 234
Prediction of Crack Initiation at Die Corner of Molded Underfill Flip-Chip Packages Under Thermal Load by New Criteria4
Correlation of HCD and Percolation Paths in FinFETs: Study of RDF and MGG Impacts Through 3-D Particle-Based Simulation4
Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density3
Call for Papers for a Special Issue of IEEE Journal of the Electron Devices Society on "Materials, processing and integration for neuromorphic devices and in-memory computing"3
Improvement of Encapsulation Technique of Organic Photovoltaics by UV-Curable Adhesive3
Robustness of Pentacene:MoS2:ZnO Ternary Blend for Optoelectronic Devices3
Table of Contents3
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part II—Reliability3
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Bandgap Semiconductor Devices for RF and Power Applications"3
An Efficient Dynamic Threshold Voltage Detection Scheme for Improving 3-D NAND Flash Reliability3
Member Get-A-Member (MGM) Program3
Optimization Techniques for Reliable Low Leakage GNRFET-Based 9T SRAM3
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Semiconductor Device Modeling for Circuit and System Design3
Reliability Characterization and Failure Prediction of 3D TLC SSDs in Large-Scale Storage Systems3
Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors Under Reverse Pulse Electrical Stress Using the Voltage-Transient Method3
Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs3
All-Regions Damage Extraction Method for SiC IGBTs Based on C-V Curves3
[Blank page]3
Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5 nm Node Junctionless Multi-Nanowire FETs3
Reliability Characterization of a Low-k Dielectric Using Magnetoresistance as a Diagnostic Tool3
Reliability Analysis of GaAs-PIN Limiter Under Ultra-Wideband Pulse Radiation3
EXT-TAURUM P2T: An Extended Secure CAN-FD Architecture for Road Vehicles3
IEEE EDS Lester F. Eastman Award3
Exploring Non-TAP Interfaces for Efficient and Secure Access to IJTAG Network3
Microstructural Evolution of Gate Oxide in SiC power MOSFETs under Heavy-Ion Irradiation3
Study on Electromagnetic Pulse Damage of 22nm FDSOI in Radiation Environment3
A Low Cost Triple-Node-Upset Self-Recoverable Latch Design for Nanoscale CMOS3
Eight-Level/Cell Storage by Tuning the Spatial Distribution of Dielectrics in a Tri-Layer ReRAM Cell: Electrical Characteristics and Reliability2
Thermal Runaway in Thin Film PV: temperature profile modeling2
Reliability and Optimization Simulation Study of Zero-Temperature-Delay Point in Digital Circuits for Advanced Technology2
2024 Index IEEE Transactions on Device and Materials Reliability Vol. 242
Design and Fabrication of FS-IGBTs With Enhanced Ruggedness and the Influence of Circuit Parameters on Short-Circuit2
Research on the Mechanism of Electrical Erosion Accelerating Failure in High-Current Pulse Thyristor-Based Switches2
Reliability Test of 21% Efficient Flexible Perovskite Solar Cell Under Concave, Convex and Sinusoidal Bending2
Table of Contents2
Comparative Analysis of SGTMOS Degradation Under Repeated Off-State Avalanche and Short Circuit Current Pulses2
Predicting the Degradation and Recovery Trends of the Photovoltaic Efficiency of Sb₂Se₃ Antimony Solar Cells2
Aging Monitoring Method of Bond Wires-Based on Phase-Frequency Characteristics of Differential Mode Conducted Interference Signal for IGBT Module2
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices2
SafeDE: A Low-Cost Hardware Solution to Enforce Diverse Redundancy in Multicores2
Monitoring Initial Solder Layer Degradation in a Multichip IGBT Module via Combined TSEPs2
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Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests2
Drain Extended MOS Body Region Engineering for Switching Reliability Under Unclamped Inductive Load Conditions2
Investigation on Traps Dynamics & Negative Bias Stress in D-Mode GaN-on-Si Power MIS HEMTs Under High-Temperature2
A 10T Soft-Error-Immune SRAM With Multi-Node Upset Recovery for Low-Power Space Applications2
A Novel Lifetime Estimation Method and Structural Optimization Design for Film Capacitors in EVs Considering Material Aging and Power Losses2
Simulation Study of Single-Event Burnout Reliability for 1.7-kV 4H-SiC VDMOSFET2
Effect of Titanium-Polymer Interactions on Adhesion of Polymer-Copper Redistribution Layers in Advanced Packaging1
Moisture Dependent Degradation Rate of Silicone in LED Optical Housing Material—Ab-Initio Modelling1
Improving Single-Event Effect Performance of SiC MOSFET by Excess Hole Extraction1
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Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications1
Life Cycle Assessment of a Lead-Free Cesium Titanium (IV) Single and Mixed Halide Perovskite Solar Cell Based 1 m² PV Module1
2021 IEEE EDS Early Career Award1
Bridging the Data Gap in Photovoltaics with Synthetic Data Generation1
Effect of Wiring Density and Pillar Structure on Chip Packaging Interaction for Mixed-Signal Cu Low k Chips1
IEEE Transactions on Device and Materials Reliability Publication Information1
Table of Contents1
Correction Masking: A Technique to Implement Efficient SET Tolerant Error Correction Decoders1
IEEE Transactions on Device and Materials Reliability Information for Authors1
Blank Page1
Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model1
Reliability Analysis of Storage Systems With Partially Repairable Devices1
Radiation Hardened Domino Logic-Based Schmitt Trigger Circuit With Improved Noise Immunity1
The Failure Mechanism of Internal Circuit During ESD Striking a Power to Another Power1
Unveiling Tmax Inside GaN HEMT Based X-Band Low-Noise Amplifier by Correlating Thermal Simulations and IR Thermographic Measurements1
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers1
An Improved Thermal Network Model of Press-Pack IGBT Modules Considering Contact Surface Damage1
2022 Index IEEE Transactions on Device and Materials Reliability Vol. 221
Investigating the Arc-Shaped Kink Drain Voltage of Drain Current With Capacitance-Voltage Measurement Method in GaN HEMTs1
Next-Generation High-Density PCB Development by Fan-Out RDL Technology1
A Gate-Level SER Estimation Tool With Event-Driven Dynamic Timing and SET Height Consideration1
BTI-Aware Timing Reliability Improvement of Pulsed Flip-Flops in Nano-Scale CMOS Technology1
Multiple Phase Change Materials Integrated Into Power Module for Normal and High Current Reliability Enhancement1
A Low-Area Overhead and Low-Delay Triple-Node-Upset Self-Recoverable Design Based on Stacked Transistors1
Investigation of Switching Characteristics Degradation of GaN HEMT Under Power Cycling Aging1
The Achievement of Pulse Laser Deposited Amorphous p-Type N-Doped Ga2O3 for Applying in Thin Film Transistor and Homojunction Diode1
Table of Contents1
Effect of Large Amplitude Thermal Cycles on Power Assemblies Based on Ceramic Heat Sink and Multilayer Pressureless Silver Sintering1
Die-Attach Influence on Thermal/Electrical Parameters of GaN RF Device1
AdAM: Adaptive Approximate Multiplier for Fault Tolerance in DNN Accelerators1
Special Issue on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFTS 2023) in the IEEE Transactions on Device and Materials Reliability1
Thermal Stress Impact on Electrical Conductivity and Microstructure of Thin Aluminum Films Deposited on Polyethylene Terephthalate Substrates1
Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications1
An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT1
Mechanism and Quantitative Modeling of the SRAM Soft Error Induced by Space Electrostatic Discharge1
Probing Interface Trapping Characteristics of Au/β-Ga2O3 Schottky Barrier Diode on Si (100)1
On-Chip Heater Design and Control Methodology for Reliability Testing Applications Requiring Over 300°C Local Temperatures1
A Thermal Circuit Representing Frequency Dependent Dynamic Heating Between Electron and Lattice in SOI-FinFET0
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers0
Utilizing Two Three-Transistor Structures for Designing Radiation Hardened Circuits0
IEEE Transactions on Device and Materials Reliability Publication Information0
Systematic Unsupervised Recycled Field-Programmable Gate Array Detection0
Fundamentals of Circuit Failure Analysis Based on Optical Fault Isolation Techniques0
An Empirical Study on Fault Detection and Root Cause Analysis of Indium Tin Oxide Electrodes by Processing S-Parameter Patterns0
IEEE Transactions on Device and Materials Reliability Information for Authors0
Time-Dependent Dielectric Breakdown in 45-nm PD-SOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications0
LED Lifetime Prediction Under Thermal-Electrical Stress0
Evidence of Hot-Hole Induced Degradation in Lateral NDRIFT MOSFET: Characterization and TCAD Analysis0
ESD Stress Effect on Failure Mechanisms in GaN-on-Si Power Device0
Highly Reproducible and Reliable Methanol Sensor Based on Hydrothermally Grown TiO2 Nanoparticles0
Review of Double-Sided Cooling Power Modules for Driving Electric Vehicles0
High-Performance Radiation-Hardened Spintronic Retention Latch and Flip-Flop for Highly Reliable Processors0
Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors—An Analytical Approach0
IEEE Transactions on Device and Materials Reliability Information for Authors0
Total Ionizing Dose (TID) Impact on Basic Amplifier Stages0
Front Cover0
Blank Page0
Table of Contents0
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO₂ and HfO₂ Stacks0
TechRxiv: Share Your Preprint Research with the World!0
4H-SiC Trench Gate Lateral MOSFET With Dual Source Trenches for Improved Performance and Reliability0
H2C-TM: A Hybrid High Coverage Test Method for Improving the Detection of HtD Faults in STT-MRAMs0
The Novel Structure to Enhancement Ion /Ioff Ratio Based on Field Effect Diode0
Reliability Challenges in Advanced 3D Technologies: The Case of Through Silicon Vias and SiCN–SiCN Wafer-to-Wafer Hybrid-Bonding Technologies0
IEEE Transactions on Device and Materials Reliability Information for Authors0
Effect of Ambient on the Field Emission Induced-Damage in Dielectric-Less MEMS Capacitive Structures0
IEEE Transactions on Device and Materials Reliability Publication Information0
The Influence of Bond Wire Aging on DM EMI Noise in IGBT Converters Considering High-Frequency Ringing0
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Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage0
Table of Contents0
Robust System Design IEEE IOLTS 20210
TechRxiv: Share Your Preprint Research with the World!0
Front Cover0
Side-Channel Attack Resilient RHBD 12T SRAM Cell for Secure Nuclear Environment0
IEEE Transactions on Device and Materials Reliability Publication Information0
Strain Modulated Asymmetrical Si/SiGe Superlattice p+-i-n+ Switches for MMW Low-Loss Secure Communication Systems0
Extracting Total Ionizing Dose Threshold Voltage Shifts From Ring Oscillator Circuit Response0
An Equivalent Circuit Model of 12nm P-FinFET for NBTI Effect0
Call for papers: Special issue on Solid-State Image Sensors0
Device Reliability and Effect of Temperature on Memristors: Nanostructured V₂O₅0
2021 EDS EDUCATION AWARD CALL FOR NOMINATIONS0
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