IEEE Transactions on Device and Materials Reliability

Papers
(The H4-Index of IEEE Transactions on Device and Materials Reliability is 15. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-10-01 to 2025-10-01.)
ArticleCitations
From Mega to nano: Beyond one Century of Vacuum Electronics52
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers49
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters35
Investigations on High-Power LEDs and Solder Interconnects in Automotive Application: Part I—Initial Characterization28
Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability23
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module23
Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via22
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data21
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators21
IEEE Transactions on Device and Materials Reliability Publication Information21
IEEE Transactions on Device and Materials Reliability Publication Information18
Device Screening Strategy for Suppressing Current Imbalance in Parallel-Connected SiC MOSFETs17
Reliability of Advanced Nodes16
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI16
Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology16
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition15
Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode15
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