IEEE Transactions on Device and Materials Reliability

Papers
(The H4-Index of IEEE Transactions on Device and Materials Reliability is 16. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)
ArticleCitations
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers62
Editorial38
Location-Aware Error Correction for Mitigating the Impact of Interconnects on STT-MRAM Reliability36
A Modified Bypass Circuit for Improved Reliability of PV Module Validated With Real-Time Data33
On the Response Time Constant of Interface Defects in Accumulation33
Design and Reliability Assessment of a Reconfigurable Tunneling Device for Ultra Low-Power Applications27
Guidelines for the Design of Random Telegraph Noise-Based True Random Number Generators24
FEA-Dominant Reliability and Lifetime Model of Double-Sided Cooling SiC Power Module22
Package-Level Electro-Thermal Simulation With Transient Thermal Resistance Model for Surge Stress Failure Analysis of SiC MOSFET22
Sintered Silver-Based Direct-Cooled IGBTs With High Output Power and Thermal Reliability22
Mission Profile-Based Hotspot Temperature and Lifespan Estimation of DC-Link Capacitors Used in Automotive Traction Inverters20
IEEE Transactions on Device and Materials Reliability Publication Information19
IEEE Transactions on Device and Materials Reliability Publication Information19
Reliability of Advanced Nodes19
Unveiling the Degradation Mechanism of Polymer-Based Thermal Interface Materials Under Thermo-Oxidative Condition16
Research of Single-Event Burnout in P-NiO/n-Ga 2 O 3 Heterojunction Diode16
Stability in Electroluminescence From Ag-NSi Schottky Junction LED: Role of Ambient Oxidation16
Table of Contents16
Influence of Gate Insulator Modulation on the Electrical and Material Properties of Dual-Gate InGaZnO Thin-Film Transistors16
A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes16
Implication of Self-Heating Effect on Device Reliability Characterization of Multi-Finger n-MOSFETs on 22FDSOI16
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