IEEE Transactions on Device and Materials Reliability

Papers
(The H4-Index of IEEE Transactions on Device and Materials Reliability is 18. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-03-01 to 2024-03-01.)
ArticleCitations
Impact of Interface Trap Charges on Analog/RF and Linearity Performances of Dual-Material Gate-Oxide-Stack Double-Gate TFET48
Critical Insights Into Fast Charging Techniques for Lithium-Ion Batteries in Electric Vehicles40
Quadruple and Sextuple Cross-Coupled SRAM Cell Designs With Optimized Overhead for Reliable Applications34
Design Optimization of Three-Stacked Nanosheet FET From Self-Heating Effects Perspective31
A Novel Hot Spot Mitigation Circuit for Improved Reliability of PV Module29
Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence29
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs25
Impact of Geometry, Doping, Temperature, and Boundary Conductivity on Thermal Characteristics of 14-nm Bulk and SOI FinFETs25
EMSpice: Physics-Based Electromigration Check Using Coupled Electronic and Stress Simulation23
Modeling of NBTS Effects in P-Channel Power VDMOSFETs23
A Highly Reliable and Energy Efficient Radiation Hardened 12T SRAM Cell Design21
Design of High-Speed Low Variation Static Noise Margin Ternary S-RAM Cells20
Exceeding Conservative Limits: A Consolidated Analysis on Modern Hardware Margins20
Double Node Upset Tolerant RHBD15T SRAM Cell Design for Space Applications20
High-Performance Radiation-Hardened Spintronic Retention Latch and Flip-Flop for Highly Reliable Processors20
Reliability-Aware Design Strategies for Stateful Logic-in-Memory Architectures19
Study of Charge Trapping Effects on AlGaN/GaN HEMTs Under UV Illumination With Pulsed I-V Measurement18
A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode18
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