IEEE Transactions on Device and Materials Reliability

Papers
(The H4-Index of IEEE Transactions on Device and Materials Reliability is 14. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)
ArticleCitations
Critical Insights Into Fast Charging Techniques for Lithium-Ion Batteries in Electric Vehicles48
Quadruple and Sextuple Cross-Coupled SRAM Cell Designs With Optimized Overhead for Reliable Applications37
Design Optimization of Three-Stacked Nanosheet FET From Self-Heating Effects Perspective36
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs31
High-Performance Radiation-Hardened Spintronic Retention Latch and Flip-Flop for Highly Reliable Processors24
Design of High-Speed Low Variation Static Noise Margin Ternary S-RAM Cells23
A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode20
Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications19
LED Lifetime Prediction Under Thermal-Electrical Stress18
Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks18
Short Circuit Detection and Fault Current Limiting Method for IGBTs17
ESD Protection Designs: Topical Overview and Perspective15
Soft-Error-Aware SRAM for Terrestrial Applications15
TCAD Based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT14
Aging Diagnosis of Bond Wire Using On-State Drain-Source Voltage Separation for SiC MOSFET14
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