IEEE Electron Device Letters

Papers
(The TQCC of IEEE Electron Device Letters is 7. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-02-01 to 2024-02-01.)
ArticleCitations
Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage153
1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2126
Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles111
60-GHz Compact Dual-Mode On-Chip Bandpass Filter Using GaAs Technology108
Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors104
Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm286
Millimeter-Wave On-Chip Bandpass Filter Based on Spoof Surface Plasmon Polaritons86
Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm84
High-k Oxide Field-Plated Vertical (001) β-Ga2O3Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm280
Regrowth-Free GaN-Based Complementary Logic on a Si Substrate72
All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology72
Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor70
Wideband and Low-Loss Surface Acoustic Wave Filter Based on 15° YX-LiNbO₃/SiO₂/Si Structure70
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs70
3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination66
GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz65
Enhancement-Mode $\beta$ -Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker63
2D MoS2-Based Threshold Switching Memristor for Artificial Neuron62
Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing60
10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes60
6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC59
Prediction of FinFET Current-Voltage and Capacitance-Voltage Curves Using Machine Learning With Autoencoder57
Low-Power Artificial Neurons Based on Ag/TiN/HfAlOx/Pt Threshold Switching Memristor for Neuromorphic Computing57
Mimicry of Excitatory and Inhibitory Artificial Neuron With Leaky Integrate-and-Fire Function by a Single MOSFET56
Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films54
Large Coupling Acoustic Wave Resonators Based on LiNbO₃/SiO₂/Si Functional Substrate53
Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs51
p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability49
Observation of Dynamic V TH of p-GaN Gate HEMTs by Fast Sweeping Characterization49
Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance49
Oxide Synaptic Transistors Coupled With Triboelectric Nanogenerators for Bio-Inspired Tactile Sensing Application49
Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy49
True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching48
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm48
Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V48
Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution48
High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays47
Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity47
An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor With Lanthanum Hexaboride Gate Material47
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²47
Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage47
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz46
Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell44
CW Operation of a W-Band High-Gain Helical-Waveguide Gyrotron Traveling-Wave Tube44
E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs43
Normally-Off-$\beta$ -Ga2O3 Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure43
InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers42
360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications42
Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction41
A G-Band Traveling Wave Tube With 20 W Continuous Wave Output Power41
Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes40
Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors40
High-Detectivity β-Ga₂O₃ Microflake Solar-Blind Phototransistor for Weak Light Detection40
High Figure-of-Merit Lamb Wave Resonators Based on Al0.7Sc0.3N Thin Film39
RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band39
Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors38
A 177–183 GHz High-Power GaN-Based Frequency Doubler With Over 200 mW Output Power38
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT37
Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier37
Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm2/Vs37
Performance Limits of Vertical Unipolar Power Devices in GaN and 4H-SiC37
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process37
Gate-Controllable Electronic Trap Detection in Dielectrics37
Artificial Nociceptor Using 2D MoS2 Threshold Switching Memristor36
Highly Sensitive and Flexible Piezoresistive Pressure Sensors Based on 3D Reduced Graphene Oxide Aerogel36
Demonstration of a Pulsed G-Band 50-W Traveling Wave Tube36
Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States36
Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current36
High On-State Current in Chemical Vapor Deposited Monolayer MoS2nFETs With Sn Ohmic Contacts34
High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination34
Self-Selective Resistive Device With Hybrid Switching Mode for Passive Crossbar Memory Application34
Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current34
Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory33
One-Volt, Solution-Processed InZnO Thin-Film Transistors33
Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application33
High-Quality Single Crystal Perovskite for Highly Sensitive X-Ray Detector33
Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability33
Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m$\Omega\cdot$ cm2/1500 V GaN Diodes33
Thin-Film Photodetector Optimization for High-Performance Short-Wavelength Infrared Imaging32
345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond32
Logic Compatible High-Performance Ferroelectric Transistor Memory32
High-Performance β-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process32
AND Flash Array Based on Charge Trap Flash for Implementation of Convolutional Neural Networks32
HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability32
Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET31
Technological Design of 3D NAND-Based Compute-in-Memory Architecture for GB-Scale Deep Neural Network31
Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band31
Guidelines for Ferroelectric FET Reliability Optimization: Charge Matching31
Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing31
Short-Wave Near-Infrared Polarization Sensitive Photodetector Based on GaSb Nanowire31
Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination31
606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%31
Uncovering the Anisotropic Electronic Structure of 2D Group VA-VA Monolayers for Quantum Transport31
Pixel Circuit With P-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistor for Micro Light-Emitting Diode Displays Using Pulse Width Modulation31
2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension31
Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques30
Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs30
Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs30
High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator30
Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO₂ on Si Oscillators30
Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters29
Deep-Learning-Assisted Physics-Driven MOSFET Current-Voltage Modeling29
High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory29
Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr1-xO₂ Capacitors29
Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess29
4H-SiC Super-Junction JFET: Design and Experimental Demonstration28
High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process28
Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency28
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density28
31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors28
Demonstration of a Selective Oversized Cavity in a Terahertz Second-Harmonic Gyrotron27
High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics27
Novel S-Band Metamaterial Extended Interaction Klystron27
A Broadband On-Chip Bandpass Filter Using Shunt Dual-Layer Meander-Line Resonators27
Hf0.5Zr0.5O2-Based Ferroelectric Gate HEMTs With Large Threshold Voltage Tuning Range26
Self-Heating and Electrothermal Properties of Advanced Sub-5-nm Node Nanoplate FET26
GaN-Based High-Response Frequency and High-Optical Power Matrix Micro-LED for Visible Light Communication26
ZrN-Based Flexible Resistive Switching Memory26
Trench-Isolated Low Gain Avalanche Diodes (TI-LGADs)26
Intrinsically Switchable Ferroelectric Scandium Aluminum Nitride Lamb-Mode Resonators25
Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET25
Ferroelectric-Gate Field-Effect Transistor Memory With Recessed Channel25
Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET25
Improved Performance of Flexible Graphene Heater Based on Repeated Laser Writing25
Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts25
Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing25
Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging24
Stable Operation of a Repetitively Pulsed X-Band Relativistic Backward Wave Oscillator24
High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm224
A Sub-1-V, Microwatt Power-Consumption Iontronic Pressure Sensor Based on Organic Electrochemical Transistors24
A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance23
Principal Enhancement of THz-Range Gyrotron Parameters Using Injection Locking23
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs23
Method to Achieve the Morphotropic Phase Boundary in HfxZr1−xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications23
Capacitive Neural Network Using Charge-Stored Memory Cells for Pattern Recognition Applications23
A High-Performance Mode-Localized Accelerometer Employing a Quasi-Rigid Coupler23
Fast-Response Amorphous Ga₂O₃ Solar-Blind Ultraviolet Photodetectors Tuned by a Polar AlN Template23
A 0.19e- rms Read Noise 16.7Mpixel Stacked Quanta Image Sensor With 1.1 μm-Pitch Backside Illuminated Pixels23
Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs23
High-Performance β-Ga2O3 Solar-Blind Photodetector With Extremely Low Working Voltage22
High-Performance Vertical III-V Nanowire MOSFETs on Si With gm > 3 mS/μm22
Low-Temperature Fabrication of Nontoxic Indium Oxide Nanofibers and Their Application in Field-Effect Transistors22
Giant Piezoelectricity of Janus M₂SeX (M = Ge, Sn; X = S, Te) Monolayers22
Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications22
$p$ -GaN Gate Power Transistor With Distributed Built-in Schottky Barrier Diode for Low-loss Reverse Conduction22
Performance Prospects of Deeply Scaled Spin-Transfer Torque Magnetic Random-Access Memory for In-Memory Computing22
C-Plane Blue Micro-LED With 1.53 GHz Bandwidth for High-Speed Visible Light Communication22
High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination22
Demonstration of a High-Power and Wide-Bandwidth G-Band Traveling Wave Tube With Cascade Amplification22
A Rate-Integrating Honeycomb Disk Resonator Gyroscope With 0.038°/h Bias Instability and °7000°/s Measurement Range22
Lifetime Prediction of Ultraviolet Light-Emitting Diodes Using a Long Short-Term Memory Recurrent Neural Network22
Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices22
An Inkjet-Printed Flexible Non-Enzymatic Lactate Sensor for Clinical Blood Plasma Test21
Blue Molecular Emitter-Free and Doping-Free White Organic Light-Emitting Diodes With High Color Rendering21
P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors21
High-Overtone Thin Film Ferroelectric AlScN-on-Silicon Composite Resonators21
Solid-State Synthesized BiFeO3 Perovskite-Based Fast-Response White-Light Photodetector21
Novel Double Tunnel Staggered Grating Slow Wave Structure for 0.2 THz Traveling Wave Tube21
A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlO Ferroelectric Film21
V₂C-Based Memristor for Applications of Low Power Electronic Synapse21
Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure21
On-Chip Millimeter-Wave Integrated Absorptive Bandstop Filter in (Bi)-CMOS Technology21
An Optoelectronic Reservoir Computing for Temporal Information Processing21
Improved DC and RF Performance of Novel MIS p-GaN-Gated HEMTs by Gate-All-Around Structure20
Piezoelectric Micromachined Ultrasonic Transducer With Superior Acoustic Outputs for Pulse-Echo Imaging Application20
Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier With Low Turn-On Voltage20
Pr0.7Ca0.3MnO3-Based Three-Terminal Synapse for Neuromorphic Computing20
Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures20
LiF/Al₂O₃ as Dielectrics for MOSFET on Single Crystal Hydrogen-Terminated Diamond20
Compact Model for Geometry Dependent Mobility in Nanosheet FETs20
Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal20
Low–Frequency Noise in Vertically Stacked Si n–Channel Nanosheet FETs20
3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure20
Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array20
Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor20
RF Linearity Enhancement of GaN-on-Si HEMTs With a Closely Coupled Double-Channel Structure20
Self-Aligned E-Mode GaN p-Channel FinFET With ION > 100 mA/mm and ION/IOFF > 10⁷20
Sensitivity Analysis Based on Neural Network for Optimizing Device Characteristics20
Sensing Performance of SO₂, SO₃ and NO₂ Gas Molecules on 2D Pentagonal PdSe₂: A First-Principle Study20
Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities20
Kilo-Voltage Thin-Film Transistors for Driving Nanowire Field Emitters20
1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination20
Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design19
145-MW/cm2 Heteroepitaxial Diamond MOSFETs With NO2 p-Type Doping and an Al2O3 Passivation Layer19
Flexible PMOS Inverter and NOR Gate Using Inkjet-Printed Dual-Gate Organic Thin Film Transistors19
Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors19
Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping19
Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure19
Unveiling the Apparent “Negative Capacitance” Effects Resulting From Pulse Measurements of Ferroelectric-Dielectric Bilayer Capacitors19
High Average Power Test of a W-Band Broadband Gyrotron Traveling Wave Tube19
AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser19
Multiterminal Ionic Synaptic Transistor With Artificial Blink Reflex Function19
Experimental Study of 600 V Accumulation-Type Lateral Double-Diffused MOSFET With Ultra-Low On-Resistance19
A Single Transistor Neuron With Independently Accessed Double-Gate for Excitatory-Inhibitory Function and Tunable Firing Threshold Voltage19
The Impacts of Ferroelectric and Interfacial Layer Thicknesses on Ferroelectric FET Design19
Frequency-Enabled Decouplable Dual-Modal Flexible Pressure and Temperature Sensor19
Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing19
Conduction Mechanisms of Metal-Ferroelectric- Insulator-Semiconductor Tunnel Junction on N- and P-Type Semiconductor19
Photoelectric Synapse Based on InGaZnO Nanofibers for High Precision Neuromorphic Computing18
Capacitor-Based Synaptic Devices for Hardware Spiking Neural Networks18
Reduced Asymmetric Memory Window Between Si-Based n- and p-FeFETs With Scaled Ferroelectric HfZrOₓ and AlON Interfacial Layer18
Tungsten-Gated GaN/AlGaN p-FET With Imax > 120 mA/mm on GaN-on-Si18
Acoustoelectric Non-Reciprocity in Lithium Niobate-on-Silicon Delay Lines18
Demonstration of 3D Convolution Kernel Function Based on 8-Layer 3D Vertical Resistive Random Access Memory18
Voltage-Controlled Spintronic Stochastic Neuron for Restricted Boltzmann Machine With Weight Sparsity18
Transparent Flexible High Mobility TFTs Based on ZnON Semiconductor With Dual Gate Structure18
Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer18
70-μm-Body Ga2O3 Schottky Barrier Diode With 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency18
Proposal of Ferroelectric Based Electrostatic Doping for Nanoscale Devices18
Enhanced Responsivity of Diamond UV Detector Based on Regrown Lens Structure18
Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications 18
Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse18
Leakage Current Reduction in β-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment18
Proof-of-Principle Experiment of a 20-kW-Average-Power Ka-Band Gyro-Traveling Wave Tube With a Cut-Off Waveguide Section18
On-Current Enhancement in TreeFET by Combining Vertically Stacked Nanosheets and Interbridges18
Antimonene: A Promising Candidate for SF₆ Decomposition Gas Sensors With High Sensitivity and High Stability18
A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode With a Spherically Uniform Electric Field Peak18
Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory18
Robust Binary Neural Network Operation From 233 K to 398 K via Gate Stack and Bias Optimization of Ferroelectric FinFET Synapses18
Flexible and Stretchable Ultrasonic Transducer Array Conformed to Complex Surfaces18
Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing18
High-Efficiency Phase-Locking of Millimeter-Wave Magnetron for High-Power Array Applications18
Back-End-of-Line Nano-Electro-Mechanical Switches for Reconfigurable Interconnects18
Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality18
Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact18
Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage17
Continuous Wave Operation of a Ka-Band Broadband High-Power Sheet Beam Traveling-Wave Tube17
Minimum Contact Resistance in Monoelemental 2D Material Nanodevices With Edge-Contacts17
Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating17
Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film17
Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm17
AlGaN-Based Deep-UV Micro-LED Array for Quantum Dots Converted Display With Ultra-Wide Color Gamut17
Rectified Tunnel Magnetoresistance Device With High On/Off Ratio for In-Memory Computing17
An Enhanced Tilted-Angle Acoustofluidic Chip for Cancer Cell Manipulation17
Integration of Hafnium Oxide on Epitaxial SiGe for p-type Ferroelectric FET Application17
GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator17
Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process17
Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor Against Hydrogen-Induced Degradation17
Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs17
A Temperature-Stable and Low Impedance Piezoelectric MEMS Resonator for Drop-in Replacement of Quartz Crystals17
Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer17
Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer17
A Monolayer Composite of h-BN Doped by a Nano Graphene Domain: As Sensitive Material for SO2 Gas Detection17
Low Temperature Copper-Copper Bonding of Non-Planarized Copper Pillar With Passivation16
Low-Power Resistive Memory Integrated on III–V Vertical Nanowire MOSFETs on Silicon16
Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation16
Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors16
Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching16
High-Performance AlGaN Heterojunction Phototransistor With Dopant-Free Polarization-Doped P-Base16
High-Performance, Vacuum-Free, and Self-Powered CsPbIBr2 Photodetectors Boosted by Ultra-Wide-Bandgap Ga2O3 Interlayer16
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