IEEE Electron Device Letters

Papers
(The TQCC of IEEE Electron Device Letters is 8. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-06-01 to 2026-06-01.)
ArticleCitations
Table of Contents107
IEEE Electron Device Letters Publication Information94
Table of Contents77
Front Cover76
Blank Page70
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film69
Modulation of Ciss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate68
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence66
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices66
Changes to the Editorial Board65
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion64
Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning63
RFIC 2023 Call for Papers61
EDS Meetings Calendar60
Table of Contents60
Blank Page58
IEEE Electron Device Letters Information for Authors57
Front Cover57
IEEE Electron Device Letters Information for Authors57
Table of Contents56
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications54
High-Performance SAW Device Based on Zinc-Oxide Substrate With Electric Field Regulating Graphene Film Conductivity for Signal Amplifier52
Guar Gum-WTe2 Nanohybrid-Based Biomemristor Synapse With Short- and Long-Term Plasticity52
Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiNx Passivation52
Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias50
Self-Powered a-SnOx/c-Ga2O3 Pn Heterojunction Solar-Blind Photodetector With High Responsivity and Swift Response Speed50
Hollow Cylindrical Micro-LEDs: Enabling High-Brightness Quantum Dots-Based Color Conversion for Full-Color Displays49
EDS Meetings Calendar48
Influence of Annealing Temperature on ZrO2 Nanoparticles for Improved Photodetection48
GaN Optopairs With Asymmetric Spiral Patterns for High-Resolution 360° Angle Detection47
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes46
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film46
A Flexible Graphene-Based Fabric Ultrasound Source for Machine Learning Enhanced Information Encryption46
0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer45
Demonstration of a Scalable Magnetron Array Through Extracavity Coupling45
Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs44
Front Cover44
In-Depth Investigation of Deep Ultraviolet MicroLED Geometry for Enhanced Performance44
Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors43
La In Situ Doping-Engineered HZO Capacitors Achieving High- k (~56.2) and Ferroelectricity (2Pr~43.4 μ C/cm2) at 1.5 MV/Cm With 1010 Cycles Endurance43
Short-Length, High-Efficiency S-Band Coaxial Cavity Relativistic Multibeam Klystron Amplifier for Potential High Power Microwave Application43
New Insights Into Low-Temperature Thermal Stability and PBTI in Back-Gated IGZO/HfO 2 Transistors Related to Oxygen Migration42
A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology42
High Performance UV-A Detector Using Axial n-ZnO/p-CuO p-n Junction Heterostructure Nanowire Arrays41
A Single-Chip Wafer-Level Packaged SR-Crossbar RF MEMS Switch Matrix41
A New Device Structure Yttria-Stabilized Zirconia-Based Mixed Potential Gas Sensor for Volatile Organic Compounds Gas Classification41
Terahertz Electronic Metadevices: Principles Behind the Ultra-High Cutoff Frequency40
Investigation Between Recover Behavior and Defect With Variation of Light Source in AlGaN/GaN HEMTs After Hot-Carrier Stress40
Axisymmetric Transformer in Glass IPD Technology and Its Application to Miniaturized On-Chip Bandpass Filters39
CMOS-Compatible Artificial Optoelectronic Synapse for Neuromorphic Computing39
Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure39
Organic-Inorganic Hybrid Integrated Optical Waveguide Gain Compensator Based on CsPbBr3 Perovskite Nanocrystals39
First Experiment of a 600-GHz CW Gyrotron Developed as Light Source for EMF Exposure Assessment38
Localized Thermal Effect Enhanced NBTI in Multifin pFinFETs Under Low Drain Bias38
A Compact Model of Amorphous InGaZnO TFTs to Predict Temperature-Dependent Characteristics38
Formation of 2–3 MeV, 100-ps High-Current Electron Bunches With Peak Power Above 40 GW Using an All-Solid-State Driver37
Spatial and Energetic Mapping of Traps in FeFET During Endurance Process by Advanced Trap Characterization Platform37
High Responsivity Optically-Triggered Vertical GaN Heterojunction Power Switches With kHz Operation37
3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls37
Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System37
EDS Meetings Calendar36
The Nanoscale Electrical Damage Mechanism of Ge₂Sb₂Te₅ Phase-Change Films Discovered by Conductive Atomic Force Microscopy36
Lateral Rutile GeO 2 MOSFET Devices on Single-Crystal r-GeO 2 Substrates36
Flexible Organic Optoelectronic Devices for Neuromorphic Computing36
Toward the Measurement of Microwave Electric Field Using Cesium Vapor MEMS Cell35
Highly Sensitive Mutual-Capacitive Fingerprint Sensor With Reference Electrode35
Conductive Bridging Random Access Memory-Based Switch Matrix for Reconfigurable Interconnection of Chiplet Integration35
Reproducible High-Performance Deep-UV Photovoltaic Photodetectors Based on Solution-Processed Ga 2 O 3 35
A Fully Printed ZnO Memristor Synaptic Array for Neuromorphic Computing Application35
Linear V FB Modulation and Interface Improvement in La 2 O 3 34
Black-Arsenic/Germanium-on-Insulator Heterostructure Field Effect Transistor for Ultrafast Polarization Sensitive Short-Wave Infrared Photodetection34
Electrostatic Vibration Energy Harvester With a Self-Rechargeable Electret34
Laser-Driven White Light Source With High Luminescence Saturation Through Reflective Color Converter34
Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2 FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Lay34
Experimental Demonstration of Grid-Gate LDMOS with Ultra-Low R on,sp and High HCI Robustness on 55nm BCD Platform33
High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric33
Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices33
Design and Experimental Research of a Compact Ku-Band Triaxial Klystron Amplifier With Low Seed Injection Power32
Modeling of a Multi-Gigawatt Ka-Band Superradiant Source With a Slow Traveling Wave32
High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel32
β-Ga2O3-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters32
BEOL-Compatible Amorphous Oxide Semiconductor High-Voltage Transistors Achieving BFoM Beyond the GaAs Limit32
Spurious-Free S₁ Mode AlN/ScAlN-Based Lamb Wave Resonator With Trapezoidal Electrodes32
Advanced Surface Acoustic Wave Resonators on LiTaO₃/SiO₂/Sapphire Substrate32
Fast Response Solar-Blind Ultraviolet Photodetector Based on the β-Ga₂O₃/p-Si Heterojunction32
High-Reliability HfO2/ZrO2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization32
Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique32
Characteristics of Hybrid Structured Organic Light-Emitting Diodes Display: Coupled Rigidity With Flexibility32
A Novel Non-Volatile Optoelectronic Memory: The Photon-Triggered FGMOS32
A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors31
Symmetric Phase-Engineered Hf 1-x Zr x O 2 Enab31
Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film Transistors31
A Novel Insulated Gate Trigger Thyristor Integrated With Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching31
Choice of Metal as Gate Electrode of Thin-Film Transistor With High-k Gate Dielectric31
A Low-Capacitance Long-Strip Electrode Design for Fast-Switching Vertical SiC PCSS31
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM31
P-Type SnO Thin-Film Transistor With Ultra-Thin Channel and Extremely High ON/OFF Current Ratio31
Monolithic 3-D Integration of IAZO/Si-Based 2T0C DRAM With RRAM for Monte Carlo Dropconnect Neural Networks30
IEEE Electron Device Letters Information for Authors30
Multi-Fin β -Ga 2 O 3 Vertical FinFET With Interfin30
Thermal Characterization and Design of AlN/GaN/AlN HEMTs on Foreign Substrates30
IEEE Transactions on Electron Devices Table of Contents30
Blank Page30
A Paper-Based Iontronic Capacitive Pressure Sensor for Human Muscle Motion Monitoring30
Highly-Sensitive, Flexible, and Self-Powered UV Photodetectors Based on Perovskites Cs₃Cu₂I₅/ PEDOT: PSS Heterostructure30
3D-Stacked 2T0C-DRAM Cells Using Al2O3/TiO2-Based 2DEG FETs30
Front Cover30
Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation30
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers30
High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel30
ICTMS-The Measurement Conference29
Novel Bulk Homogenization Field Devices With Reducing Process Difficulty29
Table of Contents29
Table of Contents29
High Quality Factor and Low Motional Impedance Aluminum Nitride Tuning Fork Resonators Vibrating in In-Plane Flexural Mode29
Tunable Synaptic Transistor With Volatile and Non-Volatile Switching Capabilities for Hierarchical Data Processing29
Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode29
EDS Meetings Calendar28
Interpretation of Device Characteristics of Wide-Width InGaZnO Transistors for Gate Driver Circuits28
Exploration of Analog Signal Modulation With Complementary Field-Effect Transistor (CFET)28
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices28
E-Mode p-GaN/AlGaN/GaN HEMT With Diode-Engineered Gate Configuration for Extended Gate Voltage Swing28
Semitransparent Perovskite Solar Cells With Dielectric-Metal-Dielectric Electrode Passivated by Antioxidant Dibutylhydroxytoluene27
High-Voltage, CMOS-Enabled, and Silicon Wire Array Decorated Photovoltaic Module for Driving Smart Dimming Glasses27
Low-Loss N79 Band SAW Filter With 16.0% FBW Based on15° Y-X LiNbO₃/SiC Structure27
Call for Papers for Special Issue on Production-Level Artificial Intelligence Applications in Semiconductor Manufacturing27
Improving Modulation Bandwidth and Detection Performance of Green Micro-LEDs With Pre-Strained Structure at Positive Bias27
Intelligent Dual-Mode Photodetector Based on Relaxor Ferroelectric PMN-PT Single Crystal27
Blank Page27
Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes27
GeSn Vertical Heterostructure p-i-n Waveguide Light Emitting Diode for 2 μm Band Silicon Photonics27
Optimizing De-Trap Pulses in Gate-Injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue26
A High-Speed True Random Number Generator Based on Unified Selector-RRAM26
Miniaturized ScAlN Bimorph MEMS Microphone With Windmill Structure Achieving 61.2 dB SNR26
Scheme for Multi-Chiplet Integration With Low Thermal Budget by Asymmetric Cu-Cu Bonding With Au Passivation Bonding Structure26
An Ultralow R on, sp Accumulation LDMOS With High26
Study on Improving Efficiency of Perovskite Solar Cells Through Controlling Humidity Conditions and Nickel Oxide Composition26
Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >10 426
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications26
A Low-Loss Wideband SAW Filter With Low Drift Using Multilayered Structure26
SnS/PEDOT:PSS Heterostructure-Based High Performance UV-Visible Photodetectors26
Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1–xO2 Bilayer Structure26
Bimodal Bioinspired Sensory Neuron With Tactile and Visual Perceptual Capabilities26
GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB)26
High Current and Rectification in Wafer-Level Planar Nanoscale Air Channel Diodes With Heterogeneous Electrodes25
A Novel Approach for Large-Scale Fabrication of Nanoscale Vacuum Electronic Devices With High Compatibility and Controllability25
Reach-Through-Collector Based 4H-SiC Phototransistor Enabling nW/cm2 UV Detection25
AlGaN/GaN Sidewall Gated HEMTs25
IEEE Electron Device Letters Publication Information25
Extended Single-Sided Row Hammer in DRAM: Concept and Physical Mechanism Analysis25
Low Frequency Noise of Elevated-Metal Metal-Oxide Thin-Film Transistor25
Study of Vₜₕ Instability During Recovery After Off-State Stress in p-GaN HEMT25
Bilayer Metal Oxide Channel Thin Film Transistor With Flat Interface Based on Smooth Transparent Nanopaper Substrate25
Manufacturing-Friendly SOT-MTJ Device With High Reliability and Switching Efficiency25
IEEE Transactions on Electron Devices Table of Contents25
A Flexible Organic Electrochemical Synaptic Transistor With Dopamine-Mediated Plasticity25
Assessing Copper High Density-TSVs for Reliable Performance in Cryogenic Systems25
Fabricated Parasitic-Interbridge-Free TreeFETs for CMOS Low-Power Applications25
Experiments of Sub-Micron Superjunction Devices With Ultra-Low Specific On-Resistance25
High-Order Mode Suppression in Traveling Wave Tube Based on Conformally Loaded Metasurface Filter24
Development of Low Cost Glass-Based Deep Trench Capacitor for 3D Packaging24
Mitigate IR-Drop Effect by Modulating Neuron Activation Functions for Implementing Neural Networks on Memristor Crossbar Arrays24
High Selectivity Millimeter-Wave On-Chip Band-Pass Filter With Semi-Lumped Dual-Mode Resonator by Using GaAs Technology24
3326-V Modulation-Doped Diamond MOSFETs24
Hybrid FeFET-ECRAM Device for Enhanced Memory Window and Retention via Ion-Ferroelectric Synergy24
Perovskite/InGaZnO-Based Reconfigurable Optoelectronic Device24
ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability24
High-Temperature Operation of Al0.5Ga0.5N/AlN Solar-Blind Phototransistor With Built-In Polarization Photogate24
Anisotropic Two-Dimensional Perovskite Single Crystal for Improved X-Ray Detection Performance24
The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors24
Low-Power CMOS Inverter Using Homogeneous Monolayer WSe₂ Channel With Polarity Control24
Effect of Optical Pulsewidth on Transition From Linear to Nonlinear Mode of GaAs PCSS24
Development of Compact Millimeter-Wave Antenna by Stacking of Five Glass Wafers With Through Glass Vias24
V FB Tuning and D it Modulation Using LaFMD and Al 2 24
Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 10624
Anti-Ferroelectric ZrO 2 Capacitors With Ultra-High Capacitive Memory Window and Low Operating Voltage24
Role of Solar Cells in Global Energy Transformation23
Blank Page23
High-Temperature Deep Ultraviolet Photodetector Based on a Crystalline Ga₂O₃-Diamond Heterostructure23
High-Performance MIM/p-GaN Gate HEMTs With a 3-nm Insulator for Power Conversion23
Table of Contents23
RF Performance of Stacked Si Nanosheets/Nanowires23
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes23
Table of Contents23
Blank Page23
An Enhanced Elliptically-Deformed Folded Waveguide for E-Band Traveling Wave Tubes With Hot-Test Validation23
Zr-Based Contacts to n-Type AlN With Improved Performance for Power and High-Temperature Electronics23
Corrections to “Semi-Classical Monte Carlo Simulation of Quantum Confinement Effects in Si Nanosheet and Fin FETs in Industry Standard Orientation”23
Table of Contents23
Table of Contents23
IIRW 2023 Call for Papers23
HfO2-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications23
A Data-Driven ANN-Based Model for FeCAP and FeFET: Orienting to SPICE and Circuit Design23
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers23
An On-Chip Fractally Chipped FBAR Filter With Ba-Zn-Fe-Sc-O Thin Film in 5G-FR2 Millimeter-Wave Band23
Current Temperature Stress Induced Threshold Degradation on Corbino a-InGaZnO Transistors22
Ultraviolet Photodetectors Based on In-Ga-ZnO Field-Effect Diodes With NiO Capping Layer22
Engineering Ferroelectric Gate Dielectric to Achieve High-Performance Multilevel Organic Transistor Nonvolatile Memories With the Programming/Erasing Voltages Below 10 V22
Controllable p-Type Doping of 2D WSe 2 pFET by Engineered Surface Charge Transfer Doping With Metal Co-Seeding22
CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing22
Ultrathin Multilayer P(VDF-TrFE) Film-Based Piezoelectric Resonator for High-Quality Under-Display Fingerprint Recognition22
RF Characterization of Ferroelectric MOS Capacitors22
One-Transistor Poly-Si Memory Devices With Near-Zero Subthreshold Swing and Extended Retention Time22
Hybrid CMOS Inverter With 519-V/V Gain Based on Highly Stable LTPS p-TFT and IGZO n-TFT22
Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts22
Nonvolatile Ferroelectric LiNbO3 Domain Wall Crossbar Memory22
Diffraction-Grating-Free Very Small-Pitch High-x InP/InxGa1-x as Quantum Well Infrared Photodetectors22
Directional Etching of Barrierless NiAl Lines on 300-mm Wafers for Interconnects Applications22
Unraveling the Discrepancy on Persistent Photoconductivity Between Organic Single-Crystal and Thin-Film Phototransistors22
Memory Window Expansion in HfO 2 -Based FeFETs Through Trap-to-Dipole Conversion22
Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga₂O₃ Based Resistive Random Access Memory Device22
Demonstration of Improvement in On-Resistance Versus Breakdown Voltage Trade-Off for Top-Gate High-Voltage InGaO TFTs22
Ferroelectric Transistor With Grooved Structure for Reliable Multi-Level Characteristics21
Temperature Dependence of Betavoltaic Cell Performance of Diamond pn Junction Diode21
Iso-Potential Guard Ring Engineered 4H-SiC Soft X-Ray Photon Counting Detector With Room-Temperature Energy Spectroscopy Capability21
MetaRGBX-Net: RGB Sensitivity and Cross-Talk Prediction in CMOS Image Sensor21
High RF Performance E-Mode GaN-on-Si HEMTs With Pₒᵤₜ of 5.32 W/mm Using High-Quality Ultrathin Buffer21
Design and Cold-Test Measurement of a Novel Metamaterial Assisted Dual-Band Slow Wave Structure21
Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments21
Extremely Low Switching Current STT-MRAM Device With Double Spin Transfer Torque21
Nano-Welded Lead-Free Ag 2 BiI 5 Perovskite Microcrystals Enable Ultrasensitive Self-Powered Photo21
3D SRAM Using Ultrathin Body Nanosheets and Bitline Signal Decoupling21
SnS₂/WSe₂ van der Waals Single-Detector Spectrometer With a Dynamically Selecting Spectral Reconstruction Strategy21
Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C)21
LO-Free Self-Driven Down-Conversion via Combination Resonance in CMOS-MEMS Resonators21
Front Cover21
Monolithically Integrated GaN Photodetector and Bootstrapping Transimpedance Amplifier21
Impact of Domain Wall Motion on the Memory Window in a Multidomain Ferroelectric FET21
Low-Temperature Annealing in O2 to Annihilate the Fixed Charges in 4H-SiC/SiO2 Interface Induced by High-N-Density Nitridation Process21
Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell21
Initial Demonstration of an Inductive Vibrating Ring Gyroscope Fabricated From Fused Silica20
Organic Optoelectronic Synaptic Devices for Energy-Efficient Neuromorphic Computing20
Impact of CF4/O2 Plasma Passivation on Endurance Performance of Zr-Doped HfO2 Ferroelectric Film20
Self-Powered Nano Pt/Amorphous Ga₂O₃/Crystalline CuCrO₂ Heterostructure Solar-Blind Photodetector With High Responsivity and Detectivity20
Yttrium Doped Hf₀.₅Zr₀.₅O₂ Based Ferroelectric Capacitor Exhibiting Fatigue Free (>10₁₂ Cycles), Long Retention, and Imprint Immune Performance at 4 K20
Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation20
Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer20
High-Power Diamond Photoconductive Switch With Sub-Bandgap Responsivity20
High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer20
Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line20
31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation20
Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs 20
Ultrafast-Speed MoS₂/CuO Photodetector Based on Strongly Coupled Heterojunction20
0.53-mΩ.cm 2 /592-V High Breakdown Voltage GaN-on-Sapphire Schottky Diodes Without Edge Termination20
Double Buried Oxide Trap-Rich Substrates for High Frequency Applications20
Gate Leakage and Reliability of GaN -Channel FET With SiNₓ/GaON Staggered Gate Stack20
Enhancement-Mode GaN Monolithic Bidirectional Switch With Integrated Gate Driver for High Temperature Application20
Novel G-Band Slot-Loaded Folded Waveguide Traveling Wave Tube20
5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer20
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