IEEE Electron Device Letters

Papers
(The TQCC of IEEE Electron Device Letters is 8. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-05-01 to 2025-05-01.)
ArticleCitations
Table of Contents160
Editorial 2020 Electron Devices Society George E. Smith Award130
IEEE Electron Device Letters information for authors129
Blank Page122
EDS Meetings Calendar84
Front Cover78
Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure66
RFIC 2023 Call for Papers65
Blank Page64
Table of Contents60
Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2 FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Lay58
Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors56
Choice of Metal as Gate Electrode of Thin-Film Transistor With High-k Gate Dielectric55
High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel55
High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing54
Small-Area Perovskite Photodiodes With High Detectivity and Stability54
Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias53
Low-Cost, Printed Memristor Using Indigo and a Dispersion of Colloidal Graphite Deposited by Spray Coating52
A Voltage-Controlled Gain Cell Magnetic Memory50
First Experiment of a 600-GHz CW Gyrotron Developed as Light Source for EMF Exposure Assessment48
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film47
0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer47
A Novel Insulated Gate Trigger Thyristor Integrated With Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching46
Modulation of Ciss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate46
Guar Gum-WTe2 Nanohybrid-Based Biomemristor Synapse With Short- and Long-Term Plasticity45
Toward the Measurement of Microwave Electric Field Using Cesium Vapor MEMS Cell45
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film44
The Nanoscale Electrical Damage Mechanism of Ge₂Sb₂Te₅ Phase-Change Films Discovered by Conductive Atomic Force Microscopy43
Conductive Bridging Random Access Memory-Based Switch Matrix for Reconfigurable Interconnection of Chiplet Integration43
Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiNx Passivation43
Design and Experimental Research of a Compact Ku-Band Triaxial Klystron Amplifier With Low Seed Injection Power43
Highly-Sensitive, Flexible, and Self-Powered UV Photodetectors Based on Perovskites Cs₃Cu₂I₅/ PEDOT: PSS Heterostructure43
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices43
Investigation Between Recover Behavior and Defect With Variation of Light Source in AlGaN/GaN HEMTs After Hot-Carrier Stress42
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence41
Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for VT Prediction Using Lateral Carrier Density Profiling Technique40
Organic-Inorganic Hybrid Integrated Optical Waveguide Gain Compensator Based on CsPbBr3 Perovskite Nanocrystals40
High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric40
Influence of Annealing Temperature on ZrO2 Nanoparticles for Improved Photodetection40
High-Reliability HfO2/ZrO2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization40
Flexible Organic Optoelectronic Devices for Neuromorphic Computing40
A Novel Non-Volatile Optoelectronic Memory: The Photon-Triggered FGMOS39
A Fully Printed ZnO Memristor Synaptic Array for Neuromorphic Computing Application39
A Compact Model of Amorphous InGaZnO TFTs to Predict Temperature-Dependent Characteristics39
High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel39
Changes to the Editorial Board39
Short-Length, High-Efficiency S-Band Coaxial Cavity Relativistic Multibeam Klystron Amplifier for Potential High Power Microwave Application38
A New Device Structure Yttria-Stabilized Zirconia-Based Mixed Potential Gas Sensor for Volatile Organic Compounds Gas Classification38
3D-Stacked 2T0C-DRAM Cells Using Al2O3/TiO2-Based 2DEG FETs38
Impact of the Low Temperature Ohmic Contact Process on DC and Forward Gate Bias Stress Operation of GaN HEMT Devices38
A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors37
Highly Sensitive Mutual-Capacitive Fingerprint Sensor With Reference Electrode37
Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System36
A Flexible Graphene-Based Fabric Ultrasound Source for Machine Learning Enhanced Information Encryption36
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion35
Au- and Ag-Containing Contacts to GaSb-Photovoltaic Converters35
Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors35
Rich Device Physics Found in Photoresponses of Low-Dimensional Photodetectors by Fitting With Explicit Photogain Theory35
Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning34
Characteristics of Hybrid Structured Organic Light-Emitting Diodes Display: Coupled Rigidity With Flexibility34
Table of Contents34
3D Van der Pauw Device for MOS Channel Characterization on 4H-SiC Trench Sidewalls34
IEEE Electron Device Letters Publication Information33
Table of Contents33
Modeling of a Multi-Gigawatt Ka-Band Superradiant Source With a Slow Traveling Wave32
Advanced Surface Acoustic Wave Resonators on LiTaO₃/SiO₂/Sapphire Substrate32
A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology32
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers32
Blank Page32
Front Cover32
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications31
High-Performance SAW Device Based on Zinc-Oxide Substrate With Electric Field Regulating Graphene Film Conductivity for Signal Amplifier31
Table of Contents31
IEEE Electron Device Letters Information for Authors31
IEEE Electron Device Letters Information for Authors31
Black-Arsenic/Germanium-on-Insulator Heterostructure Field Effect Transistor for Ultrafast Polarization Sensitive Short-Wave Infrared Photodetection30
Hollow Cylindrical Micro-LEDs: Enabling High-Brightness Quantum Dots-Based Color Conversion for Full-Color Displays30
Laser-Driven White Light Source With High Luminescence Saturation Through Reflective Color Converter30
In-Depth Investigation of Deep Ultraviolet MicroLED Geometry for Enhanced Performance30
Spurious-Free S₁ Mode AlN/ScAlN-Based Lamb Wave Resonator With Trapezoidal Electrodes30
Self-Powered a-SnOx/c-Ga2O3 Pn Heterojunction Solar-Blind Photodetector With High Responsivity and Swift Response Speed30
Normally-OFF p-GaN Gate Double-Channel HEMT With Suppressed Hot-Electron-Induced Dynamic ON-Resistance Degradation29
Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing29
A New Pixel Circuit Compensating for Strain-Induced Luminance Reduction in Stretchable Active-Matrix Organic Light Emitting Diode Displays29
Amorphous ZrO2 Tunnel Junction Memristor With a Tunneling Electroresistance Ratio Above 40029
Fast Response Solar-Blind Ultraviolet Photodetector Based on the β-Ga₂O₃/p-Si Heterojunction28
Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs28
Pathways for Retention Boost in Atomic Layer Etched IGZO-based Capacitorless DRAM28
β-Ga2O3-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters28
A Paper-Based Iontronic Capacitive Pressure Sensor for Human Muscle Motion Monitoring28
A Single-Chip Wafer-Level Packaged SR-Crossbar RF MEMS Switch Matrix28
Localized Thermal Effect Enhanced NBTI in Multifin pFinFETs Under Low Drain Bias28
Spatial and Energetic Mapping of Traps in FeFET During Endurance Process by Advanced Trap Characterization Platform28
Electrostatic Vibration Energy Harvester With a Self-Rechargeable Electret28
Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film Transistors28
High Performance UV-A Detector Using Axial n-ZnO/p-CuO p-n Junction Heterostructure Nanowire Arrays28
Reproducible High-Performance Deep-UV Photovoltaic Photodetectors Based on Solution-Processed Ga2O3 Films28
Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs27
[Front cover]27
IEEE Electron Device Letters27
2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer27
Front Cover27
IEEE Transactions on Electron Devices Table of Contents27
Thermal Characterization and Design of AlN/GaN/AlN HEMTs on Foreign Substrates27
Blank page27
Table of contents26
The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors26
Blank Page26
Call for Papers for Special Issue on Production-Level Artificial Intelligence Applications in Semiconductor Manufacturing26
Blank Page26
IEEE Electron Device Letters Information for Authors26
Chaos and Hyperchaos in a Ka-Band Gyrotron26
ICTMS-The Measurement Conference26
Front Cover26
A Low-Loss Wideband SAW Filter With Low Drift Using Multilayered Structure25
High Selectivity Millimeter-Wave On-Chip Band-Pass Filter With Semi-Lumped Dual-Mode Resonator by Using GaAs Technology25
ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability25
A Flexible Organic Electrochemical Synaptic Transistor With Dopamine-Mediated Plasticity25
Scheme for Multi-Chiplet Integration With Low Thermal Budget by Asymmetric Cu-Cu Bonding With Au Passivation Bonding Structure25
Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1–xO2 Bilayer Structure25
Enhanced Tunneling Electro-Resistance Ratio for Ferroelectric Tunnel Junctions by Engineering Metal Work Function25
Study on Improving Efficiency of Perovskite Solar Cells Through Controlling Humidity Conditions and Nickel Oxide Composition25
Development of Compact Millimeter-Wave Antenna by Stacking of Five Glass Wafers With Through Glass Vias24
EDS Meetings Calendar24
HfO2-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications24
Table of Contents24
SnS/PEDOT:PSS Heterostructure-Based High Performance UV-Visible Photodetectors24
Development of Low Cost Glass-Based Deep Trench Capacitor for 3D Packaging24
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices24
Bilayer Metal Oxide Channel Thin Film Transistor With Flat Interface Based on Smooth Transparent Nanopaper Substrate24
Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Avalanche Gain Over 10624
3326-V Modulation-Doped Diamond MOSFETs24
High-Temperature Deep Ultraviolet Photodetector Based on a Crystalline Ga₂O₃-Diamond Heterostructure24
High-Performance MIM/p-GaN Gate HEMTs With a 3-nm Insulator for Power Conversion24
High-Order Mode Suppression in Traveling Wave Tube Based on Conformally Loaded Metasurface Filter24
Low Frequency Noise of Elevated-Metal Metal-Oxide Thin-Film Transistor24
Reverse Current Stress Induced Dynamic Ron of GaN HEMTs in Soft-Switching Mode23
Mitigate IR-Drop Effect by Modulating Neuron Activation Functions for Implementing Neural Networks on Memristor Crossbar Arrays23
Reach-Through-Collector Based 4H-SiC Phototransistor Enabling nW/cm2 UV Detection23
High Current and Rectification in Wafer-Level Planar Nanoscale Air Channel Diodes With Heterogeneous Electrodes23
Origin of Degradation of Flexible Poly-Si TFTs Under Dynamic Bending Stress23
A High-Speed True Random Number Generator Based on Unified Selector-RRAM23
Kudos to Our Golden Reviewers23
Low-Loss N79 Band SAW Filter With 16.0% FBW Based on15° Y-X LiNbO₃/SiC Structure23
Improving Modulation Bandwidth and Detection Performance of Green Micro-LEDs With Pre-Strained Structure at Positive Bias23
High-Temperature Operation of Al0.5Ga0.5N/AlN Solar-Blind Phototransistor With Built-In Polarization Photogate23
High Quality Factor and Low Motional Impedance Aluminum Nitride Tuning Fork Resonators Vibrating in In-Plane Flexural Mode23
Novel Adjustable Self-Compensation Flipped Voltage Follower of ZnO TFTs for Transparent Pixel Circuits23
Effect of Optical Pulsewidth on Transition From Linear to Nonlinear Mode of GaAs PCSS23
Semitransparent Perovskite Solar Cells With Dielectric-Metal-Dielectric Electrode Passivated by Antioxidant Dibutylhydroxytoluene23
Interpretation of Device Characteristics of Wide-Width InGaZnO Transistors for Gate Driver Circuits23
Intelligent Dual-Mode Photodetector Based on Relaxor Ferroelectric PMN-PT Single Crystal22
Perovskite/InGaZnO-Based Reconfigurable Optoelectronic Device22
Experiments of Sub-Micron Superjunction Devices With Ultra-Low Specific On-Resistance22
Low-Power CMOS Inverter Using Homogeneous Monolayer WSe2 Channel with Polarity Control22
Front cover22
Tunable Synaptic Transistor With Volatile and Non-Volatile Switching Capabilities for Hierarchical Data Processing22
Thermal Crosstalk Characterization Using Temperature Dependent Leakage Current Through Gate Stacks22
Optimizing De-Trap Pulses in Gate-Injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue22
Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes22
Assessing Copper High Density-TSVs for Reliable Performance in Cryogenic Systems22
Bimodal Bioinspired Sensory Neuron With Tactile and Visual Perceptual Capabilities22
Table of Contents22
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers22
RF Performance of Stacked Si Nanosheets/Nanowires22
Novel Bulk Homogenization Field Devices With Reducing Process Difficulty22
Infrared Gesture Recognition System Based on Near-Sensor Computing22
High-Voltage, CMOS-Enabled, and Silicon Wire Array Decorated Photovoltaic Module for Driving Smart Dimming Glasses22
Anisotropic Two-Dimensional Perovskite Single Crystal for Improved X-Ray Detection Performance22
High Resolution and Fast Response of Humidity Sensor Based on AlN Cantilever With Two Groups of Segmented Electrodes22
Table of Contents22
Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors22
Spintronics-Devices and Circuits22
GeSn Vertical Heterostructure p-i-n Waveguide Light Emitting Diode for 2 μm Band Silicon Photonics22
31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation21
Extremely Low Switching Current STT-MRAM Device With Double Spin Transfer Torque21
Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs 21
An Image Memory Logic Unit Inspired by Human Retina21
Novel G-Band Slot-Loaded Folded Waveguide Traveling Wave Tube21
Observation of Hydrogen-Related Defect in Subgap Density of States and Its Effects Under Positive Bias Stress in Amorphous InGaZnO TFT21
Nonvolatile Ferroelectric LiNbO3 Domain Wall Crossbar Memory21
Yttrium Doped Hf0.5Zr0.5O2 Based Ferroelectric Capacitor Exhibiting Fatigue Free (>1012 cycles), Long Retention, and Imprint Immune Performance at 4 K21
MetaRGBX-Net:RGB Sensitivity and Cross-Talk Prediction in CMOS Image Sensor21
Table of Contents21
Ferroelectric Transistor With Grooved Structure for Reliable Multi-Level Characteristics21
Table of Contents20
IEEE Electron Device Letters information for authors20
High RF Performance E-Mode GaN-on-Si HEMTs With Pₒᵤₜ of 5.32 W/mm Using High-Quality Ultrathin Buffer20
Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer20
In-Memory Nearest Neighbor Search With Nanoelectromechanical Ternary Content-Addressable Memory20
Blank Page20
Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line20
Blank Page20
Front Cover20
Monolithically Integrated GaN Photodetector and Bootstrapping Transimpedance Amplifier20
IIRW 2023 Call for Papers20
Monolithic Integration of GaN-Based Green Micro-LED and Quasi-Vertical MOSFET Utilizing a Hybrid Tunnel Junction20
CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing20
Role of Solar Cells in Global Energy Transformation20
Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics20
Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C)20
Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O₂19
Gate Leakage and Reliability of GaN -Channel FET With SiNₓ/GaON Staggered Gate Stack19
Diffraction-Grating-Free Very Small-Pitch High-x InP/InxGa1-x as Quantum Well Infrared Photodetectors19
Low-Temperature Annealing in O2 to Annihilate the Fixed Charges in 4H-SiC/SiO2 Interface Induced by High-N-Density Nitridation Process19
Ultra-Low Power, Emission Gate Driver With Pulse Width Modulation Using Low-Temperature Poly-Si Oxide Thin-Film Transistors19
3D SRAM Using Ultrathin Body Nanosheets and Bitline Signal Decoupling19
Orthogonal-Bulk-Spin-Orbit-Torque Device for All-Electrical In-Memory Computing19
Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation19
Ultrathin Multilayer P(VDF-TrFE) Film-Based Piezoelectric Resonator for High-Quality Under-Display Fingerprint Recognition19
One-Transistor Poly-Si Memory Devices With Near-Zero Subthreshold Swing and Extended Retention Time19
High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer19
Anticipative Objective Tracking With Short-Term Memristive Synapses19
Temperature Dependence of Betavoltaic Cell Performance of Diamond pn Junction Diode19
Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell19
Unraveling the Discrepancy on Persistent Photoconductivity Between Organic Single-Crystal and Thin-Film Phototransistors19
Impact of Domain Wall Motion on the Memory Window in a Multidomain Ferroelectric FET19
Ultraviolet Photodetectors Based on In-Ga-ZnO Field-Effect Diodes With NiO Capping Layer19
Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts19
A Configurable Artificial Neuron Based on a Threshold-Tunable TiN/NbOₓ/Pt Memristor19
Backgated Graphene Varactors With Quality Factor–Frequency Product Above 300 GHz19
A Novel Dual-Sheet-Beam Backward Wave Oscillator Based on Sub-Terahertz Band V-Shaped Orthogonal Grating Waveguide18
Back-End-of-Line Compatible Transistor With Ultrathin InZnO Channel Enabling Operations in Cryogenic Environments18
Ultrafast-Speed MoS₂/CuO Photodetector Based on Strongly Coupled Heterojunction18
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications"18
IEEE Electron Device Letters information for authors18
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications"18
Fully Printed Dual-Gate Organic Electrochemical Synaptic Transistor With Neurotransmitter-Mediated Plasticity18
A New Class of High-Overtone Bulk Acoustic Resonators Using Lithium Niobate on Conductive Silicon Carbide18
Experimental Investigations on a 500GHz Continuously Frequency-Tunable Gyrotron18
P-GaN/AlGaN/GaN Fin-HEMT With High Saturation Current and Enhanced VTH Stability18
RF Characterization of Ferroelectric MOS Capacitors18
Current Temperature Stress Induced Threshold Degradation on Corbino a-InGaZnO Transistors18
Directional Etching of Barrierless NiAl Lines on 300-mm Wafers for Interconnects Applications18
Electro-Thermal Confinement Enables Improved Superlattice Phase Change Memory18
IEEE Robert Bosch Micro and Nano Electro Mechanical Systems Award18
SnS₂/WSe₂ van der Waals Single-Detector Spectrometer With a Dynamically Selecting Spectral Reconstruction Strategy18
Organic Optoelectronic Synaptic Devices for Energy-Efficient Neuromorphic Computing18
Impact of CF4/O2 Plasma Passivation on Endurance Performance of Zr-Doped HfO2 Ferroelectric Film18
An On-Chip Fractally Chipped FBAR Filter With Ba-Zn-Fe-Sc-O Thin Film in 5G-FR2 Millimeter-Wave Band18
5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer18
Initial Demonstration of an Inductive Vibrating Ring Gyroscope Fabricated From Fused Silica18
Design and Cold-Test Measurement of a Novel Metamaterial Assisted Dual-Band Slow Wave Structure18
Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance18
Table of Contents18
Temperature Regulated Artificial Neuron Based on Memristor18
Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga₂O₃ Based Resistive Random Access Memory Device18
Double Buried Oxide Trap-Rich Substrates for High Frequency Applications18
High-Responsivity Ti3C2 Tx/SiC Nano-Cone Holes UV van der Waals Schottky Photodiode by Maskless Etching17
Over 1 A Operation of Vertical-Type Diamond MOSFETs17
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