IEEE Electron Device Letters

Papers
(The TQCC of IEEE Electron Device Letters is 7. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)
ArticleCitations
Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles136
60-GHz Compact Dual-Mode On-Chip Bandpass Filter Using GaAs Technology120
High-k Oxide Field-Plated Vertical (001) β-Ga2O3Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2110
Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm99
6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC92
All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology92
Wideband and Low-Loss Surface Acoustic Wave Filter Based on 15° YX-LiNbO₃/SiO₂/Si Structure92
Prediction of FinFET Current-Voltage and Capacitance-Voltage Curves Using Machine Learning With Autoencoder76
10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes69
Large Coupling Acoustic Wave Resonators Based on LiNbO₃/SiO₂/Si Functional Substrate67
p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability66
Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films66
2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension63
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm61
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²56
Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V55
True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching54
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT54
Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm2/Vs51
High On-State Current in Chemical Vapor Deposited Monolayer MoS2nFETs With Sn Ohmic Contacts48
Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory48
High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination47
High Figure-of-Merit Lamb Wave Resonators Based on Al0.7Sc0.3N Thin Film47
Deep-Learning-Assisted Physics-Driven MOSFET Current-Voltage Modeling47
Pixel Circuit With P-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistor for Micro Light-Emitting Diode Displays Using Pulse Width Modulation46
High-Detectivity β-Ga₂O₃ Microflake Solar-Blind Phototransistor for Weak Light Detection46
A G-Band Traveling Wave Tube With 20 W Continuous Wave Output Power45
One-Volt, Solution-Processed InZnO Thin-Film Transistors45
Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination45
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process44
Logic Compatible High-Performance Ferroelectric Transistor Memory44
Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing43
Highly Sensitive and Flexible Piezoresistive Pressure Sensors Based on 3D Reduced Graphene Oxide Aerogel43
Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors43
HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability42
Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability42
High-Performance β-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process42
Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency41
Demonstration of a Pulsed G-Band 50-W Traveling Wave Tube41
Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current40
345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond40
Short-Wave Near-Infrared Polarization Sensitive Photodetector Based on GaSb Nanowire39
Technological Design of 3D NAND-Based Compute-in-Memory Architecture for GB-Scale Deep Neural Network38
Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs38
Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs38
Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters38
Thin-Film Photodetector Optimization for High-Performance Short-Wavelength Infrared Imaging38
606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%38
A Broadband On-Chip Bandpass Filter Using Shunt Dual-Layer Meander-Line Resonators37
Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques37
High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process36
Uncovering the Anisotropic Electronic Structure of 2D Group VA-VA Monolayers for Quantum Transport36
31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors36
Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET35
High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics35
AND Flash Array Based on Charge Trap Flash for Implementation of Convolutional Neural Networks35
High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory33
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs33
Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr1-xO₂ Capacitors33
Engineering Hf0.5Zr0.5O2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constant32
High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm232
Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing32
Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality32
Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging32
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density32
A Configurable Artificial Neuron Based on a Threshold-Tunable TiN/NbOₓ/Pt Memristor31
Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET30
Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications 30
Giant Piezoelectricity of Janus M₂SeX (M = Ge, Sn; X = S, Te) Monolayers30
V₂C-Based Memristor for Applications of Low Power Electronic Synapse29
Lifetime Prediction of Ultraviolet Light-Emitting Diodes Using a Long Short-Term Memory Recurrent Neural Network29
Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film29
Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition29
Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices29
A Sub-1-V, Microwatt Power-Consumption Iontronic Pressure Sensor Based on Organic Electrochemical Transistors29
High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination29
Sensing Performance of SO₂, SO₃ and NO₂ Gas Molecules on 2D Pentagonal PdSe₂: A First-Principle Study29
Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer29
High-Overtone Thin Film Ferroelectric AlScN-on-Silicon Composite Resonators29
Reduced Asymmetric Memory Window Between Si-Based n- and p-FeFETs With Scaled Ferroelectric HfZrOₓ and AlON Interfacial Layer28
Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage28
An Optoelectronic Reservoir Computing for Temporal Information Processing28
Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts28
Fast-Response Amorphous Ga₂O₃ Solar-Blind Ultraviolet Photodetectors Tuned by a Polar AlN Template28
10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C28
Method to Achieve the Morphotropic Phase Boundary in HfxZr1−xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications28
70-μm-Body Ga2O3 Schottky Barrier Diode With 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency28
On-Chip Millimeter-Wave Integrated Absorptive Bandstop Filter in (Bi)-CMOS Technology28
A Rate-Integrating Honeycomb Disk Resonator Gyroscope With 0.038°/h Bias Instability and °7000°/s Measurement Range27
RF Linearity Enhancement of GaN-on-Si HEMTs With a Closely Coupled Double-Channel Structure27
A 0.19e- rms Read Noise 16.7Mpixel Stacked Quanta Image Sensor With 1.1 μm-Pitch Backside Illuminated Pixels27
High Average Power Test of a W-Band Broadband Gyrotron Traveling Wave Tube27
Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs27
Multilayered PdTe₂/GaN Heterostructures for Visible-Blind Deep-Ultraviolet Photodetection27
A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlO Ferroelectric Film27
AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz26
Stable Operation of a Repetitively Pulsed X-Band Relativistic Backward Wave Oscillator26
High-Performance β-Ga2O3 Solar-Blind Photodetector With Extremely Low Working Voltage26
Self-Aligned E-Mode GaN p-Channel FinFET With ION > 100 mA/mm and ION/IOFF > 10⁷26
Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping26
C-Plane Blue Micro-LED With 1.53 GHz Bandwidth for High-Speed Visible Light Communication26
Demonstration of a High-Power and Wide-Bandwidth G-Band Traveling Wave Tube With Cascade Amplification26
Capacitor-Based Synaptic Devices for Hardware Spiking Neural Networks25
16 × 16 Solar-Blind UV Detector Based on β-Ga2O3 Sensors25
Intrinsically Switchable Ferroelectric Scandium Aluminum Nitride Lamb-Mode Resonators25
Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design25
An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps25
AlGaN-Based Deep-UV Micro-LED Array for Quantum Dots Converted Display With Ultra-Wide Color Gamut25
High-Quality Film Bulk Acoustic Resonators Fabricated on AlN Films Grown by a New Two-Step Method25
A K-Band Bulk Acoustic Wave Resonator Using Periodically Poled Al0.72Sc0.28N25
A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide25
β-Ga₂O₃ Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm² Power Figure of Merit25
Tungsten-Gated GaN/AlGaN p-FET With Imax > 120 mA/mm on GaN-on-Si25
High-Efficiency Phase-Locking of Millimeter-Wave Magnetron for High-Power Array Applications25
High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers24
Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal24
Minimum Contact Resistance in Monoelemental 2D Material Nanodevices With Edge-Contacts24
Quantum Dots Integrated Deep-Ultraviolet Micro-LED Array Toward Solar-Blind and Visible Light Dual-Band Optical Communication24
High-Performance UV Photodetectors Based on 1-D Ag/ZnO Nanostructures With a Simple Photochemical Process at Room Temperature24
An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage24
2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer24
High-Performance Enhancement-Mode p-Channel GaN MISFETs With Steep Subthreshold Swing24
Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array24
P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors24
Conduction Mechanisms of Metal-Ferroelectric- Insulator-Semiconductor Tunnel Junction on N- and P-Type Semiconductor23
The Impacts of Ferroelectric and Interfacial Layer Thicknesses on Ferroelectric FET Design23
Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing23
Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory23
Flexible and Stretchable Ultrasonic Transducer Array Conformed to Complex Surfaces23
3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure23
V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization23
A 250-Watts, 0.5-THz Continuous-Wave Second-Harmonic Gyrotron23
Blue Molecular Emitter-Free and Doping-Free White Organic Light-Emitting Diodes With High Color Rendering23
Photoelectric Synapse Based on InGaZnO Nanofibers for High Precision Neuromorphic Computing23
Experimental Demonstration of NAND-Like Spin-Torque Memory Unit22
An Efficient Vircator With High Output Power and Less Drifting Electron Loss by Forming Multivirtual Cathodes22
Fully Solution-Processed ZnO Nanorod Array/PEDOT:PSS Heterojunction Photodetector for Ultraviolet Light22
β-Ga2O3-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters22
Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure22
Organic Optoelectronic Synaptic Devices for Energy-Efficient Neuromorphic Computing22
Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer21
Millimeter-Wave Dual-Band Bandpass Filter With Large Bandwidth Ratio Using GaAs-Based Integrated Passive Device Technology21
Two-Fold Reduction of Switching Current Density in Phase Change Memory Using Bi₂Te₃ Thermoelectric Interfacial Layer21
ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability21
High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High I ON/I OFF and High Threshold Voltage21
A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode With a Spherically Uniform Electric Field Peak21
Continuous Wave Operation of a Ka-Band Broadband High-Power Sheet Beam Traveling-Wave Tube21
High-Speed Mid-Wave Infrared Uni-Traveling Carrier Photodetector Based on InAs/InAsSb Type-II Superlattice21
AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser21
Multiterminal Ionic Synaptic Transistor With Artificial Blink Reflex Function21
An Ultra-Short Dense Paraxial Bunch of Sub-Relativistic Runaway Electrons21
Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes21
Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs21
702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation21
Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors21
Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process20
Asymmetric Metal Halide Film With Suppressed Leakage Current for High Sensitive X-Ray Detection and Imaging20
HfZrOₓ-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering20
Electrohydrodynamically Printed Flexible Organic Memristor for Leaky Integrate and Fire Neuron20
Boosting Efficiency of InP Quantum Dots-Based Light-Emitting Diodes by an In-Doped ZnO Electron Transport Layer20
High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers20
Observation of Hydrogen-Related Defect in Subgap Density of States and Its Effects Under Positive Bias Stress in Amorphous InGaZnO TFT20
Development of Compact Millimeter-Wave Antenna by Stacking of Five Glass Wafers With Through Glass Vias20
High Voltage Amorphous InGaZnO TFT With F Doped Drain Offset Structure20
Proposal of Ferroelectric Based Electrostatic Doping for Nanoscale Devices20
High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlOx Insulator20
Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse20
Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation20
Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer20
Improved Endurance of Hf₀.₅Zr₀.₅O2-Based Ferroelectric Capacitor Through Optimizing the Ti–N Ratio in TiN Electrode20
Single Silicon Neuron Device Enabling Neuronal Oscillation and Stochastic Dynamics20
Robust Binary Neural Network Operation From 233 K to 398 K via Gate Stack and Bias Optimization of Ferroelectric FinFET Synapses20
Low-Temperature (70°C) Cu-to-Cu Direct Bonding by Capping Metal Layers19
Field Effect-Controlled Space-Charge Limited Emission Triode With Nanogap Channels19
A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current 19
Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact19
Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array19
E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering19
Ultra-Low Power, Emission Gate Driver With Pulse Width Modulation Using Low-Temperature Poly-Si Oxide Thin-Film Transistors19
Incremental Drain-Voltage-Ramping Training Method for Ferroelectric Field-Effect Transistor Synaptic Devices19
Enhanced Tunneling Electro-Resistance Ratio for Ferroelectric Tunnel Junctions by Engineering Metal Work Function19
Advanced Surface Acoustic Wave Resonators on LiTaO₃/SiO₂/Sapphire Substrate19
A Worst-Case Analysis of Trap-Assisted Tunneling Leakage in DRAM Using a Machine Learning Approach19
A Temperature-Stable and Low Impedance Piezoelectric MEMS Resonator for Drop-in Replacement of Quartz Crystals19
High Slope Efficiency Bipolar Cascade 905nm Vertical Cavity Surface Emitting Laser19
Effects of Channel Length Scaling on the Signal-to-Noise Ratio in FET-Type Gas Sensor With Horizontal Floating-Gate19
Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications19
Vertical β-Ga₂O₃ Schottky Barrier Diodes With Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination19
Enhanced Responsivity of Diamond UV Detector Based on Regrown Lens Structure19
A Memristor-Based Leaky Integrate-and-Fire Artificial Neuron With Tunable Performance19
Wideband Bandpass Filter for 5G Millimeter- Wave Application in 45-nm CMOS Silicon-on-Insulator18
Investigation on the Mechanism of Triggering Efficiency of High-Power Avalanche GaAs Photoconductive Semiconductor Switch18
Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency18
Evaluation of Positive-Bias-Stress-Induced Degradation in InSnZnO Thin-Film Transistors by Low Frequency Noise Measurement18
Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT Under High-Frequency Switching18
Integration of Hafnium Oxide on Epitaxial SiGe for p-type Ferroelectric FET Application18
A Physically Transient Self-Rectifying and Analogue Switching Memristor Synapse18
GaN-Based Micro-Light-Emitting Diode Driven by a Monolithic Integrated Ultraviolet Phototransistor18
Robust Through-Fin Avalanche in Vertical GaN Fin-JFET With Soft Failure Mode18
Two Memristors-Based XOR Logic Demonstrated With Encryption/Decryption18
Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching18
Electro-Thermal Confinement Enables Improved Superlattice Phase Change Memory18
Light-Pulse Splitting From Nano-Light-Emitting Diodes Operating in Noncarrier Injection Mode18
Dual Buffer Layers for Developing Electrochemical Metallization Memory With Low Current and High Endurance18
Correlation Between Electrical Performance and Gate Width of GaN-Based HEMTs18
Accurate Modeling of Cryogenic Temperature Effects in 10-nm Bulk CMOS FinFETs Using the BSIM-CMG Model18
Novel Lateral Double-Diffused MOSFET With Ultralow On-Resistance by the Variable Resistivity of Drift Region18
15-GHz Epitaxial AlN FBARs on SiC Substrates18
Photonic Synaptic Transistor Based on P-Type Organic Semiconductor Blending With N-Type Organic Semiconductor18
Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor With Split Active Layer by N2O Annealing18
Fast-Response Low Humidity Sensor Based on Ionic Liquid Functionalized MOF-801 by Solvent-Assisted Linker Exchange18
Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching18
M-Plane α-Ga₂O₃ Solar-Blind Detector With Record-High Responsivity-Bandwidth Product and High-Temperature Operation Capability17
Quantum-Dots Optimized Electrode for High-Stability Transient Memristor17
Observation and Characterization of Recoverable Fatigue Process Under Low-Electric Field (<1.8MV/cm) in HfZrO Ferroelectric Film17
Effect of Silicon Doping in B–Te (B4Te₆) Binary Ovonic Threshold Switch System17
An Enhanced Tilted-Angle Acoustofluidic Chip for Cancer Cell Manipulation17
A High-Performance 9.5% Scandium-Doped Aluminum Nitride Piezoelectric MEMS Hydrophone With Honeycomb Structure17
3D AND-Type Ferroelectric Transistors for Compute-in-Memory and the Variability Analysis17
An Artificial Spiking Nociceptor Integrating Pressure Sensors and Memristors17
2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes With Self-Aligned Mesa Termination17
Development of Metal Bonding for Passive Matrix Micro-LED Display Applications17
Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process17
Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors17
High-Performance Dual-Gated Single-Layer WS2 MOSFETs With Bi Contacts17
Wide-Range Frequency-Agile Microwave Generation up to 10 GHz Based on Vanadium-Compensated 4H-SiC Photoconductive Semiconductor Switch17
Flexible Dual-Wave Mode AlN-Based Surface Acoustic Wave Device on Polymeric Substrate17
Tractable Resonant Circuit With Two Nonuniform Beams for a High-Power 0.22-THz Extended Interaction Oscillator17
Unified Compact Model for Thin-Film Heterojunction Anti-Ambipolar Transistors17
GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform17
Two-Dimensional (C6H5C2H4NH3)2PbI4 Perovskite Single Crystal Resistive Switching Memory Devices17
A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology16
Boosting β-Ga2O3 Solar-Blind Detector via Highly Photon Absorbance and Carrier Injection by Localized Surface Plasmon Resonance16
Tunable Stochastic Oscillator Based on Hybrid VO₂/TaOₓ Device for Compressed Sensing16
Broadband and High Power Meta-Surface Dielectric Window for W-Band Gyrotron Traveling Wave Tubes16
Atomic Layer Deposition Plasma-Based Undoped-HfO2 Ferroelectric FETs for Non-Volatile Memory16
Indium Nanoparticles Capped TiO₂ Nanowire Array for Boosted Photosensing Adoption16
Sub-10-nm Diameter Vertical Nanowire p-Type GaSb/InAsSb Tunnel FETs16
Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrOx/HfZrO Gate Insulator by 2 Step Sequential Ar/O2 Treatment16
Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT16
Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain16
Noise Detection System Based on Noise Triboelectric Nanogenerator and Synaptic Transistors16
Dual Al₂O₃/Hf₀.₅Zr₀.₅O₂ Stack Thin Films for Improved Ferroelectricity and Reliability16
Understanding Interface-Controlled Resistance Drift in Superlattice Phase Change Memory16
Broadband Graphene Field-Effect Coupled Detectors: From Soft X-Ray to Near-Infrared16
Tunable Plasticity in Printed Optoelectronic Synaptic Transistors by Contact Engineering16
Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga2O3 and β-(AlxGa1−x)2O3 Films16
Self-Powered p-NiO/n-Ga2O3 Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage16
High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing15
Effects of Process-Induced Defects on Polarization Switching in Ferroelectric Tunneling Junction Memory15
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