IEEE Electron Device Letters

Article	Citations
Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage	154
1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2	127
Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles	113
60-GHz Compact Dual-Mode On-Chip Bandpass Filter Using GaAs Technology	108
Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2	88
Millimeter-Wave On-Chip Bandpass Filter Based on Spoof Surface Plasmon Polaritons	87
Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm	84
High-k Oxide Field-Plated Vertical (001) β-Ga2O3Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2	81
All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology	75
Regrowth-Free GaN-Based Complementary Logic on a Si Substrate	73
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs	73
Wideband and Low-Loss Surface Acoustic Wave Filter Based on 15° YX-LiNbO₃/SiO₂/Si Structure	72
Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor	72
3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination	66
GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz	65
Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing	65
2D MoS2-Based Threshold Switching Memristor for Artificial Neuron	63
Prediction of FinFET Current-Voltage and Capacitance-Voltage Curves Using Machine Learning With Autoencoder	62
6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC	61
10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes	59
Low-Power Artificial Neurons Based on Ag/TiN/HfAlOx/Pt Threshold Switching Memristor for Neuromorphic Computing	57
Large Coupling Acoustic Wave Resonators Based on LiNbO₃/SiO₂/Si Functional Substrate	56
Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films	55
p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability	53
Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs	52

Oxide Synaptic Transistors Coupled With Triboelectric Nanogenerators for Bio-Inspired Tactile Sensing Application	50
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm	50
Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance	50
Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy	50
Observation of Dynamic V TH of p-GaN Gate HEMTs by Fast Sweeping Characterization	50
An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor With Lanthanum Hexaboride Gate Material	49
Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution	49
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²	49
High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays	48
Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity	48
Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage	47
True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching	47
Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V	46
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz	45
CW Operation of a W-Band High-Gain Helical-Waveguide Gyrotron Traveling-Wave Tube	45
E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs	44
Normally-Off-$\beta$ -Ga2O3 Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure	43
InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers	43
360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications	42
Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction	42
A G-Band Traveling Wave Tube With 20 W Continuous Wave Output Power	41
Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes	41
Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors	40
High Figure-of-Merit Lamb Wave Resonators Based on Al0.7Sc0.3N Thin Film	40
High-Detectivity β-Ga₂O₃ Microflake Solar-Blind Phototransistor for Weak Light Detection	40
RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band	40
Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process	39
A 177–183 GHz High-Power GaN-Based Frequency Doubler With Over 200 mW Output Power	39
Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors	38
Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm2/Vs	38
Top-Down Fabricated Reconfigurable FET With Two Symmetric and High-Current On-States	38
Gate-Controllable Electronic Trap Detection in Dielectrics	37
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT	37
Demonstration of a Pulsed G-Band 50-W Traveling Wave Tube	37
Performance Limits of Vertical Unipolar Power Devices in GaN and 4H-SiC	37
Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier	37
Artificial Nociceptor Using 2D MoS2 Threshold Switching Memristor	37
High On-State Current in Chemical Vapor Deposited Monolayer MoS2nFETs With Sn Ohmic Contacts	36
High-Voltage and High-ION/IOFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination	36
Highly Sensitive and Flexible Piezoresistive Pressure Sensors Based on 3D Reduced Graphene Oxide Aerogel	36
345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond	35
Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability	34
Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current	34
Logic Compatible High-Performance Ferroelectric Transistor Memory	34
Self-Selective Resistive Device With Hybrid Switching Mode for Passive Crossbar Memory Application	34
One-Volt, Solution-Processed InZnO Thin-Film Transistors	34
Role of the Hf/Si Interfacial Layer on the High Performance of MoS2-Based Conductive Bridge RAM for Artificial Synapse Application	33
High-Performance β-Ga2O3 Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process	33
Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory	33
606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%	33

Thin-Film Photodetector Optimization for High-Performance Short-Wavelength Infrared Imaging	33
2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension	32
Pixel Circuit With P-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistor for Micro Light-Emitting Diode Displays Using Pulse Width Modulation	32
AND Flash Array Based on Charge Trap Flash for Implementation of Convolutional Neural Networks	32
Deep-Learning-Assisted Physics-Driven MOSFET Current-Voltage Modeling	32
Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques	32
Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band	31
Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET	31
4H-SiC Super-Junction JFET: Design and Experimental Demonstration	31
Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO₂ on Si Oscillators	31
Technological Design of 3D NAND-Based Compute-in-Memory Architecture for GB-Scale Deep Neural Network	31
Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination	31
HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability	31
Short-Wave Near-Infrared Polarization Sensitive Photodetector Based on GaSb Nanowire	31
Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters	31
Guidelines for Ferroelectric FET Reliability Optimization: Charge Matching	31
Uncovering the Anisotropic Electronic Structure of 2D Group VA-VA Monolayers for Quantum Transport	31
Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs	31
High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator	30
Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing	30
Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr1-xO₂ Capacitors	30
Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs	30
High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory	29
Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess	29
31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors	28
Novel S-Band Metamaterial Extended Interaction Klystron	28
A Broadband On-Chip Bandpass Filter Using Shunt Dual-Layer Meander-Line Resonators	28
Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency	28
Demonstration of a Selective Oversized Cavity in a Terahertz Second-Harmonic Gyrotron	28
High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics	28
High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process	28
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density	28
Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing	27
Effects of High-Pressure Annealing on the Low-Frequency Noise Characteristics in Ferroelectric FET	27
High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2	27
Hf0.5Zr0.5O2-Based Ferroelectric Gate HEMTs With Large Threshold Voltage Tuning Range	26
Self-Heating and Electrothermal Properties of Advanced Sub-5-nm Node Nanoplate FET	26
Trench-Isolated Low Gain Avalanche Diodes (TI-LGADs)	26
ZrN-Based Flexible Resistive Switching Memory	26
Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts	26
GaN-Based High-Response Frequency and High-Optical Power Matrix Micro-LED for Visible Light Communication	26
Improved Performance of Flexible Graphene Heater Based on Repeated Laser Writing	26
Ferroelectric-Gate Field-Effect Transistor Memory With Recessed Channel	25
A Sub-1-V, Microwatt Power-Consumption Iontronic Pressure Sensor Based on Organic Electrochemical Transistors	25
Intrinsically Switchable Ferroelectric Scandium Aluminum Nitride Lamb-Mode Resonators	25
A High-Performance Mode-Localized Accelerometer Employing a Quasi-Rigid Coupler	25
Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET	25
Principal Enhancement of THz-Range Gyrotron Parameters Using Injection Locking	24
Capacitive Neural Network Using Charge-Stored Memory Cells for Pattern Recognition Applications	24
A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance	24
Low Thermal Resistance (0.5 K/W) Ga₂O₃ Schottky Rectifiers With Double-Side Packaging	24
Stable Operation of a Repetitively Pulsed X-Band Relativistic Backward Wave Oscillator	24
Fast-Response Amorphous Ga₂O₃ Solar-Blind Ultraviolet Photodetectors Tuned by a Polar AlN Template	24
Demonstration of Superior Electrical Characteristics for 1.2 kV SiC Schottky Barrier Diode-Wall Integrated Trench MOSFET With Higher Schottky Barrier Height Metal	24
High-Overtone Thin Film Ferroelectric AlScN-on-Silicon Composite Resonators	24
Fast Read-After-Write and Depolarization Fields in High Endurance n-Type Ferroelectric FETs	23
Self-Aligned E-Mode GaN p-Channel FinFET With ION > 100 mA/mm and ION/IOFF > 10⁷	23
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs	23
High-Performance β-Ga2O3 Solar-Blind Photodetector With Extremely Low Working Voltage	23
A 0.19e- rms Read Noise 16.7Mpixel Stacked Quanta Image Sensor With 1.1 μm-Pitch Backside Illuminated Pixels	23
Frequency-Enabled Decouplable Dual-Modal Flexible Pressure and Temperature Sensor	23
Demonstration of a High-Power and Wide-Bandwidth G-Band Traveling Wave Tube With Cascade Amplification	23
Lifetime Prediction of Ultraviolet Light-Emitting Diodes Using a Long Short-Term Memory Recurrent Neural Network	23
Method to Achieve the Morphotropic Phase Boundary in HfxZr1−xO2 by Electric Field Cycling for DRAM Cell Capacitor Applications	22
An Inkjet-Printed Flexible Non-Enzymatic Lactate Sensor for Clinical Blood Plasma Test	22
A Rate-Integrating Honeycomb Disk Resonator Gyroscope With 0.038°/h Bias Instability and °7000°/s Measurement Range	22
Low-Temperature Fabrication of Nontoxic Indium Oxide Nanofibers and Their Application in Field-Effect Transistors	22
C-Plane Blue Micro-LED With 1.53 GHz Bandwidth for High-Speed Visible Light Communication	22
Negative Capacitance Junctionless Device With Mid-Gap Work Function for Low Power Applications	22
High-Performance Vertical III-V Nanowire MOSFETs on Si With gm > 3 mS/μm	22
$p$ -GaN Gate Power Transistor With Distributed Built-in Schottky Barrier Diode for Low-loss Reverse Conduction	22
On-Chip Millimeter-Wave Integrated Absorptive Bandstop Filter in (Bi)-CMOS Technology	22
A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film	22
High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination	22
Solid-State Synthesized BiFeO3 Perovskite-Based Fast-Response White-Light Photodetector	22
Giant Piezoelectricity of Janus M₂SeX (M = Ge, Sn; X = S, Te) Monolayers	22
Performance Prospects of Deeply Scaled Spin-Transfer Torque Magnetic Random-Access Memory for In-Memory Computing	22
An Optoelectronic Reservoir Computing for Temporal Information Processing	22
Pr0.7Ca0.3MnO3-Based Three-Terminal Synapse for Neuromorphic Computing	21
Compact Model for Geometry Dependent Mobility in Nanosheet FETs	21

Blue Molecular Emitter-Free and Doping-Free White Organic Light-Emitting Diodes With High Color Rendering	21
Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor	21
V₂C-Based Memristor for Applications of Low Power Electronic Synapse	21
Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure	21
P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors	21
Kilo-Voltage Thin-Film Transistors for Driving Nanowire Field Emitters	21
Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities	21
Sensing Performance of SO₂, SO₃ and NO₂ Gas Molecules on 2D Pentagonal PdSe₂: A First-Principle Study	21
A Single Transistor Neuron With Independently Accessed Double-Gate for Excitatory-Inhibitory Function and Tunable Firing Threshold Voltage	21
LiF/Al₂O₃ as Dielectrics for MOSFET on Single Crystal Hydrogen-Terminated Diamond	21
Piezoelectric Micromachined Ultrasonic Transducer With Superior Acoustic Outputs for Pulse-Echo Imaging Application	21
Reduced Asymmetric Memory Window Between Si-Based n- and p-FeFETs With Scaled Ferroelectric HfZrOₓ and AlON Interfacial Layer	20
Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array	20
Low–Frequency Noise in Vertically Stacked Si n–Channel Nanosheet FETs	20
High Average Power Test of a W-Band Broadband Gyrotron Traveling Wave Tube	20
1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination	20
Improved DC and RF Performance of Novel MIS p-GaN-Gated HEMTs by Gate-All-Around Structure	20
A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode With a Spherically Uniform Electric Field Peak	20
Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier With Low Turn-On Voltage	20
High-Efficiency Phase-Locking of Millimeter-Wave Magnetron for High-Power Array Applications	20
Air-Stable P-Doping in Record High-Performance Monolayer WSe2 Devices	20
RF Linearity Enhancement of GaN-on-Si HEMTs With a Closely Coupled Double-Channel Structure	20
Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure	20
Sensitivity Analysis Based on Neural Network for Optimizing Device Characteristics	20
3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure	20
Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures	20
Conduction Mechanisms of Metal-Ferroelectric- Insulator-Semiconductor Tunnel Junction on N- and P-Type Semiconductor	19
Rectified Tunnel Magnetoresistance Device With High On/Off Ratio for In-Memory Computing	19
The Impacts of Ferroelectric and Interfacial Layer Thicknesses on Ferroelectric FET Design	19
Back-End-of-Line Nano-Electro-Mechanical Switches for Reconfigurable Interconnects	19
Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors	19
Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing	19
70-μm-Body Ga2O3 Schottky Barrier Diode With 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency	19
Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping	19
Tungsten-Gated GaN/AlGaN p-FET With Imax > 120 mA/mm on GaN-on-Si	19
Leakage Current Reduction in β-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment	19
145-MW/cm2 Heteroepitaxial Diamond MOSFETs With NO2 p-Type Doping and an Al2O3 Passivation Layer	19
Flexible PMOS Inverter and NOR Gate Using Inkjet-Printed Dual-Gate Organic Thin Film Transistors	19
Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality	19
Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact	19
Proposal of Ferroelectric Based Electrostatic Doping for Nanoscale Devices	19
Flexible and Stretchable Ultrasonic Transducer Array Conformed to Complex Surfaces	19
Demonstration of 3D Convolution Kernel Function Based on 8-Layer 3D Vertical Resistive Random Access Memory	19
Unveiling the Apparent “Negative Capacitance” Effects Resulting From Pulse Measurements of Ferroelectric-Dielectric Bilayer Capacitors	19
Improved X-Band Performance and Reliability of a GaN HEMT With Sunken Source Connected Field Plate Design	19
Antimonene: A Promising Candidate for SF₆ Decomposition Gas Sensors With High Sensitivity and High Stability	19
Multiterminal Ionic Synaptic Transistor With Artificial Blink Reflex Function	19
AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser	19
Capacitor-Based Synaptic Devices for Hardware Spiking Neural Networks	19
Experimental Study of 600 V Accumulation-Type Lateral Double-Diffused MOSFET With Ultra-Low On-Resistance	19
Enhanced Responsivity of Diamond UV Detector Based on Regrown Lens Structure	18
Acoustoelectric Non-Reciprocity in Lithium Niobate-on-Silicon Delay Lines	18
Engineering Hf0.5Zr0.5O2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constant	18
An Efficient Vircator With High Output Power and Less Drifting Electron Loss by Forming Multivirtual Cathodes	18
Voltage-Controlled Spintronic Stochastic Neuron for Restricted Boltzmann Machine With Weight Sparsity	18
Transparent Flexible High Mobility TFTs Based on ZnON Semiconductor With Dual Gate Structure	18
Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm	18
Photoelectric Synapse Based on InGaZnO Nanofibers for High Precision Neuromorphic Computing	18
Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage	18
Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse	18
Experimental Demonstration of NAND-Like Spin-Torque Memory Unit	18
Integration of Hafnium Oxide on Epitaxial SiGe for p-type Ferroelectric FET Application	18
On-Current Enhancement in TreeFET by Combining Vertically Stacked Nanosheets and Interbridges	18
Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process	18
Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications	18
Robust Binary Neural Network Operation From 233 K to 398 K via Gate Stack and Bias Optimization of Ferroelectric FinFET Synapses	18
Continuous Wave Operation of a Ka-Band Broadband High-Power Sheet Beam Traveling-Wave Tube	18
Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing	18
Proof-of-Principle Experiment of a 20-kW-Average-Power Ka-Band Gyro-Traveling Wave Tube With a Cut-Off Waveguide Section	18
Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer	18
Low Temperature Copper-Copper Bonding of Non-Planarized Copper Pillar With Passivation	17
Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film	17
Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor Against Hydrogen-Induced Degradation	17
A Worst-Case Analysis of Trap-Assisted Tunneling Leakage in DRAM Using a Machine Learning Approach	17
AlGaN-Based Deep-UV Micro-LED Array for Quantum Dots Converted Display With Ultra-Wide Color Gamut	17
An Enhanced Tilted-Angle Acoustofluidic Chip for Cancer Cell Manipulation	17
Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer	17
Improvement of Stability and Performance of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by Zinc-Tin-Oxide Spray Coating	17
Early-Stage Fluctuation in Low-Power Analog Resistive Memory: Impacts on Neural Network and Mitigation Approach	17
V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization	17
A Temperature-Stable and Low Impedance Piezoelectric MEMS Resonator for Drop-in Replacement of Quartz Crystals	17
High-Performance AlGaN Heterojunction Phototransistor With Dopant-Free Polarization-Doped P-Base	17
Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer	17
A Monolayer Composite of h-BN Doped by a Nano Graphene Domain: As Sensitive Material for SO2 Gas Detection	17
Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes	17
Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs	17
Minimum Contact Resistance in Monoelemental 2D Material Nanodevices With Edge-Contacts	17
β-Ga2O3-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters	16
High-Performance E-Mode p-Channel GaN FinFET on Silicon Substrate With High I ON/I OFF and High Threshold Voltage	16
Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors	16
2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer	16
Low-Power Resistive Memory Integrated on III–V Vertical Nanowire MOSFETs on Silicon	16
Field Effect-Controlled Space-Charge Limited Emission Triode With Nanogap Channels	16
Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching	16
High-Performance, Vacuum-Free, and Self-Powered CsPbIBr2 Photodetectors Boosted by Ultra-Wide-Bandgap Ga2O3 Interlayer	16