OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Electron Device Letters is 38. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-02-01 to 2025-02-01.)

Article	Citations
Flexible Nanocellulose Gated Pseudo-Diode for Neuromorphic Electronic Applications	139
Blank Page	120
Highly Stackable 3D Capacitor-Less DRAM for a High-Performance Hybrid Memory	110
Multiterminal Ionic Synaptic Transistor With Artificial Blink Reflex Function	99
TechRxiv: Share Your Preprint Research with the World!	94
Table of Contents	92
IEEE Electron Device Letters Publication Information	92
Terahertz Schottky Barrier Diodes Based on Aligned Carbon Nanotube Arrays	80
Improved Performance of FET-Type Humidity Sensor With Low-Power Embedded Micro-Heater	69
EDS Meetings Calendar	63
Scalable Vertical In–Ga–As Nanowire MOSFET with 67 mV/dec at 126μm Gate Width	61
Changes to the Editorial Board	57
Negative Capacitance MgZnO-Channel Thin-Film Transistor With Ferroelectric NiMgZnO in the Gate Stack	56
On-Chip High-Power Supply Unit: Micro Supercapacitor With Superb Capacitance Density and Fast Charge/Discharge Ability	55
A V-Band Coaxial Relativistic Transit-Time Oscillator Operating in TM₀₂Mode With Shallow Corrugated Output Structure	54
Experimental Research of the V-Band High Power Microwave Generation With Coaxial Cerenkov Oscillator	51
Table of contents	48
Table of contents	48
Changes to the Editorial Board	48
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on "Solid-State Image Sensors"	47
Spintronics-Devices and Circuits	47
Quasi-Nondestructive Read Out of Ferroelectric Capacitor Polarization by Exploiting a 2TnC Cell to Relax the Endurance Requirement	46
Spintronics-Devices and Circuits	46
Relaxation Oscillation Effect of the Ovonic Threshold Switch on the SET Characteristics of Phase-Change Memory in Cross-Point Structure	45
Low-Cost, Printed Memristor Using Indigo and a Dispersion of Colloidal Graphite Deposited by Spray Coating	45

Excellent Pattern Recognition Accuracy of Neural Networks Using Hybrid Synapses and Complementary Training	45
Light-Controlled Threshold Switching Memristive Neuron Devices for Color Photoreceptor	44
Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing	44
A Compact Fully Ferroelectric-FETs Reservoir Computing Network With Sub-100 ns Operating Speed	44
High-Resolution γ -Ray Spectroscopy in Capacitive Frisch Grid CdZnTeSe Detectors	43
Directly Coupled Hydrogenated Diamond FET Logic Circuit With High Voltage Gain	43
Beneficial Hydrogen Doping in Single Spinel Phase Crystallized IZTO Thin-Film Transistors	42
A Novel Quadruple Corrugated Waveguide Slow-Wave Structure for Terahertz Applications	41
Low-Voltage ITO Depressed Synaptic Transistors for Neuromorphic Application	40
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications	40
High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric	40
Highly Robust Flexible Poly-Si Thin Film Transistor Under Mechanical Strain With Split Active Layer for Foldable Active Matrix Organic Light Emitting Diode Display	39
Flexible InSnZnO Thin Film Phototransistors for Deep Ultraviolet Detection	38
Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors	38
Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors	38
Highly Conductive Carbon-Based E-Textile for Gesture Recognition	38