OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Electron Device Letters is 40. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)

Article	Citations
Ferroelectric HfO₂ Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 10¹⁰ Cycles	136
60-GHz Compact Dual-Mode On-Chip Bandpass Filter Using GaAs Technology	120
High-k Oxide Field-Plated Vertical (001) β-Ga₂O₃Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm²	110
Demonstration of the p-NiO_x/n-Ga₂O₃ Heterojunction Gate FETs and Diodes With BV²/R_on,sp Figures of Merit of 0.39 GW/cm² and 1.38 GW/cm	99
6 kV/3.4 mΩ·cm² Vertical β-Ga₂O₃ Schottky Barrier Diode With BV²/R_on,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC	92
All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology	92
Wideband and Low-Loss Surface Acoustic Wave Filter Based on 15° YX-LiNbO₃/SiO₂/Si Structure	92
Prediction of FinFET Current-Voltage and Capacitance-Voltage Curves Using Machine Learning With Autoencoder	76
10 kV, 39 mΩ·cm² Multi-Channel AlGaN/GaN Schottky Barrier Diodes	69
Large Coupling Acoustic Wave Resonators Based on LiNbO₃/SiO₂/Si Functional Substrate	67
p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability	66
Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films	66
2.5 kV Vertical Ga₂O₃ Schottky Rectifier With Graded Junction Termination Extension	63
β-(Al_0.18Ga_0.82)₂O₃/Ga₂O₃ Double Heterojunction Transistor With Average Field of 5.5 MV/cm	61
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²	56
Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V	55
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz f_T	54
True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching	54
Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm²/Vs	51
Multibit Ferroelectric FET Based on Nonidentical Double HfZrO₂ for High-Density Nonvolatile Memory	48
High On-State Current in Chemical Vapor Deposited Monolayer MoS₂nFETs With Sn Ohmic Contacts	48
High Figure-of-Merit Lamb Wave Resonators Based on Al0.7Sc0.3N Thin Film	47
Deep-Learning-Assisted Physics-Driven MOSFET Current-Voltage Modeling	47
High-Voltage and High-I_ON/I_OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination	47
High-Detectivity β-Ga₂O₃ Microflake Solar-Blind Phototransistor for Weak Light Detection	46

Pixel Circuit With P-Type Low-Temperature Polycrystalline Silicon Thin-Film Transistor for Micro Light-Emitting Diode Displays Using Pulse Width Modulation	46
One-Volt, Solution-Processed InZnO Thin-Film Transistors	45
Over 1 GW/cm₂ Vertical Ga₂O₃ Schottky Barrier Diodes Without Edge Termination	45
A G-Band Traveling Wave Tube With 20 W Continuous Wave Output Power	45
Ferroelectricity Enhancement in Hf_0.5Zr_0.5O₂ Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process	44
Logic Compatible High-Performance Ferroelectric Transistor Memory	44
Highly Sensitive and Flexible Piezoresistive Pressure Sensors Based on 3D Reduced Graphene Oxide Aerogel	43
Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors	43
Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing	43
Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability	42
High-Performance β-Ga₂O₃ Solar-Blind Schottky Barrier Photodiode With Record Detectivity and Ultrahigh Gain via Carrier Multiplication Process	42
HfO₂-ZrO₂ Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability	42
Enhancement Mode β-(Al_xGa_1-x)₂O₃/Ga₂O₃ Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency	41
Demonstration of a Pulsed G-Band 50-W Traveling Wave Tube	41
Double-Barrier β-Ga₂O₃ Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current	40
345-MW/cm² 2608-V NO₂ p-Type Doped Diamond MOSFETs With an Al₂O₃ Passivation Overlayer on Heteroepitaxial Diamond	40