OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Electron Device Letters is 40. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-05-01 to 2025-05-01.)

Article	Citations
Table of Contents	160
Editorial 2020 Electron Devices Society George E. Smith Award	130
IEEE Electron Device Letters information for authors	129
Blank Page	122
EDS Meetings Calendar	84
Front Cover	78
Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure	66
RFIC 2023 Call for Papers	65
Blank Page	64
Table of Contents	60
Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric Hf_xZr_1-xO₂ FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Lay	58
Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors	56
High-Voltage β-Ga₂O₃ RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel	55
Choice of Metal as Gate Electrode of Thin-Film Transistor With High-k Gate Dielectric	55
High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing	54
Small-Area Perovskite Photodiodes With High Detectivity and Stability	54
Plasma Processes for Vertical Niobium Nitride Superconducting Through Silicon Vias	53
Low-Cost, Printed Memristor Using Indigo and a Dispersion of Colloidal Graphite Deposited by Spray Coating	52
A Voltage-Controlled Gain Cell Magnetic Memory	50
First Experiment of a 600-GHz CW Gyrotron Developed as Light Source for EMF Exposure Assessment	48
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film	47
0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer	47
Modulation of C_iss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate	46
A Novel Insulated Gate Trigger Thyristor Integrated With Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching	46
Toward the Measurement of Microwave Electric Field Using Cesium Vapor MEMS Cell	45

Guar Gum-WTe₂ Nanohybrid-Based Biomemristor Synapse With Short- and Long-Term Plasticity	45
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film	44
Conductive Bridging Random Access Memory-Based Switch Matrix for Reconfigurable Interconnection of Chiplet Integration	43
Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiN_x Passivation	43
Design and Experimental Research of a Compact Ku-Band Triaxial Klystron Amplifier With Low Seed Injection Power	43
Highly-Sensitive, Flexible, and Self-Powered UV Photodetectors Based on Perovskites Cs₃Cu₂I₅/ PEDOT: PSS Heterostructure	43
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices	43
The Nanoscale Electrical Damage Mechanism of Ge₂Sb₂Te₅ Phase-Change Films Discovered by Conductive Atomic Force Microscopy	43
Investigation Between Recover Behavior and Defect With Variation of Light Source in AlGaN/GaN HEMTs After Hot-Carrier Stress	42
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence	41
Thermal Process and Dopant Diffusion Model of a-InGaZnO TFTs for V_T Prediction Using Lateral Carrier Density Profiling Technique	40
Organic-Inorganic Hybrid Integrated Optical Waveguide Gain Compensator Based on CsPbBr₃ Perovskite Nanocrystals	40
High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric	40
Influence of Annealing Temperature on ZrO₂ Nanoparticles for Improved Photodetection	40
High-Reliability HfO₂/ZrO₂ Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization	40
Flexible Organic Optoelectronic Devices for Neuromorphic Computing	40