OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Electron Device Letters is 43. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-03-01 to 2024-03-01.)

Article	Citations
Field-Plated Lateral Ga₂O₃ MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage	154
1-kV Sputtered p-NiO/n-Ga₂O₃ Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm²	127
Ferroelectric HfO₂ Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 10¹⁰ Cycles	113
60-GHz Compact Dual-Mode On-Chip Bandpass Filter Using GaAs Technology	108
Lateral β-Ga₂O₃ MOSFETs With High Power Figure of Merit of 277 MW/cm²	88
Millimeter-Wave On-Chip Bandpass Filter Based on Spoof Surface Plasmon Polaritons	87
Demonstration of the p-NiO_x/n-Ga₂O₃ Heterojunction Gate FETs and Diodes With BV²/R_on,sp Figures of Merit of 0.39 GW/cm² and 1.38 GW/cm	84
High-k Oxide Field-Plated Vertical (001) β-Ga₂O₃Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm²	81
All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology	75
Regrowth-Free GaN-Based Complementary Logic on a Si Substrate	73
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs	73
Wideband and Low-Loss Surface Acoustic Wave Filter Based on 15° YX-LiNbO₃/SiO₂/Si Structure	72
Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlO_x/Al₂O₃/Pt Bilayer Memristor	72
3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination	66
GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz	65
Improved Ferroelectric/Semiconductor Interface Properties in Hf_0.5Zr_0.5O₂ Ferroelectric FETs by Low-Temperature Annealing	65
2D MoS₂-Based Threshold Switching Memristor for Artificial Neuron	63
Prediction of FinFET Current-Voltage and Capacitance-Voltage Curves Using Machine Learning With Autoencoder	62
6 kV/3.4 mΩ·cm² Vertical β-Ga₂O₃ Schottky Barrier Diode With BV²/R_on,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC	61
10 kV, 39 mΩ·cm² Multi-Channel AlGaN/GaN Schottky Barrier Diodes	59
Low-Power Artificial Neurons Based on Ag/TiN/HfAlOx/Pt Threshold Switching Memristor for Neuromorphic Computing	57
Large Coupling Acoustic Wave Resonators Based on LiNbO₃/SiO₂/Si Functional Substrate	56
Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films	55
p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability	53
Impact of Read Operation on the Performance of HfO₂-Based Ferroelectric FETs	52

Observation of Dynamic V _TH of p-GaN Gate HEMTs by Fast Sweeping Characterization	50
Oxide Synaptic Transistors Coupled With Triboelectric Nanogenerators for Bio-Inspired Tactile Sensing Application	50
β-(Al_0.18Ga_0.82)₂O₃/Ga₂O₃ Double Heterojunction Transistor With Average Field of 5.5 MV/cm	50
Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10¹⁰ High On/Off Current Ratio and Low Specific On-Resistance	50
Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy	50
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²	49
An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor With Lanthanum Hexaboride Gate Material	49
Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution	49
High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays	48
Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO₂ Gate Dielectric and Excellent Uniformity	48
Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga₂O₃Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage	47
True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching	47
Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V	46
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz	45
CW Operation of a W-Band High-Gain Helical-Waveguide Gyrotron Traveling-Wave Tube	45
E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs	44
Normally-Off-$\beta$ -Ga₂O₃ Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure	43
InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers	43