IEEE Electron Device Letters

Papers
(The H4-Index of IEEE Electron Device Letters is 42. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-05-01 to 2026-05-01.)
ArticleCitations
Table of Contents173
IEEE Electron Device Letters Publication Information107
Table of Contents90
Front Cover76
Blank Page75
High-Efficiency Metal-Insulator-Metal Electron Emitter Based on Porous Alumina Film68
Modulation of Ciss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate66
Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence66
Triple-Node FinFET With Non-Ohmic Schottky Junctions for Synaptic Devices66
Changes to the Editorial Board66
Ultrathin Interfacial Layer and Pre-Gate Annealing to Suppress Virtual Gate Formation in GaN-Based Transistors: The Impact of Trapping and Fluorine Inclusion65
Self-Curable Synaptor With Tri-Node Charge- Trap FinFET for Semi-Supervised Learning63
RFIC 2023 Call for Papers62
Table of Contents60
EDS Meetings Calendar59
IEEE Electron Device Letters Information for Authors58
Blank Page58
Front Cover57
IEEE Electron Device Letters Information for Authors56
Table of Contents55
Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications54
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers54
Influence of Annealing Temperature on ZrO2 Nanoparticles for Improved Photodetection52
EDS Meetings Calendar51
A Flexible Graphene-Based Fabric Ultrasound Source for Machine Learning Enhanced Information Encryption51
GaN Optopairs With Asymmetric Spiral Patterns for High-Resolution 360° Angle Detection51
Asymmetric Interference Behavior in 3D NAND Cell and the Reverse Trend Induced by Undercut of Sacrificial Nitride Film50
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Reliability of Advanced Nodes49
A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors48
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM48
Characteristics of Hybrid Structured Organic Light-Emitting Diodes Display: Coupled Rigidity With Flexibility47
A Novel Insulated Gate Trigger Thyristor Integrated With Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching47
Laser-Driven White Light Source With High Luminescence Saturation Through Reflective Color Converter46
High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric46
Black-Arsenic/Germanium-on-Insulator Heterostructure Field Effect Transistor for Ultrafast Polarization Sensitive Short-Wave Infrared Photodetection46
La In Situ Doping-Engineered HZO Capacitors Achieving High- k (~56.2) and Ferroelectricity (2Pr~43.4 μ C/cm2) at 1.5 MV/Cm With 1010 Cycles Endurance45
β-Ga2O3-Based Solar-Blind Photodetector With Ultrahigh Responsivity via Optimizing Interdigital Electrode Parameters45
Short-Length, High-Efficiency S-Band Coaxial Cavity Relativistic Multibeam Klystron Amplifier for Potential High Power Microwave Application45
Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiNx Passivation44
Guar Gum-WTe2 Nanohybrid-Based Biomemristor Synapse With Short- and Long-Term Plasticity44
High-Performance SAW Device Based on Zinc-Oxide Substrate With Electric Field Regulating Graphene Film Conductivity for Signal Amplifier43
Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure42
Highly-Sensitive, Flexible, and Self-Powered UV Photodetectors Based on Perovskites Cs₃Cu₂I₅/ PEDOT: PSS Heterostructure42
Hollow Cylindrical Micro-LEDs: Enabling High-Brightness Quantum Dots-Based Color Conversion for Full-Color Displays42
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