Journal of Vacuum Science & Technology A

Papers
(The H4-Index of Journal of Vacuum Science & Technology A is 22. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-03-01 to 2025-03-01.)
ArticleCitations
Atomic layer deposition of crystalline molybdenum trioxide and suboxide thin films using molybdenum(II) acetate dimer precursor80
Localized surface plasmon resonance of Ag nanoparticle thin films deposited by direct-current magnetron sputtering77
Step barrier effects during early stages of the kinetic roughening of fcc(111) surfaces72
Corrosion behavior of the NiCrAlY and NiSiAlY alloys with salt mixtures of NaCl/Na2SO455
Properties of indium tin oxide thin films grown by Ar ion beam sputter deposition55
Retarded solid state dewetting of thin bismuth films with oxide capping layer45
Erratum: “Microscopic origins of radiative performance losses in thin-film solar cells at the example of (Ag,Cu)(In,Ga)Se2 devices” [J. Vac. Sci. Technol. A 42, 022803 (2024)]38
Effect of a-C:H:SiOx coating thickness on corrosion resistance and zeta potential level of Ti-6Al-4V36
Area selective PECVD on metal oxide resist33
Novel secondary ion mass spectrometry identification system for organic materials using random forest32
Evaluation of nickel self-sputtering yields by molecular-dynamics simulation30
Enhancing chemical vapor deposition growth and fabrication techniques to maximize hole conduction in tungsten diselenide for monolithic CMOS integration30
MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy29
Tuning microstructural and oxidative characteristics of direct current- and high-power pulsed magnetron sputtered MoSi2-based thin films27
Molecular beam epitaxy of Pd-Fe graded alloy films for standing spin waves control27
Atomic layer etching of SiO2 using sequential exposures of Al(CH3)3 and H2/SF6 plasma25
Nitrogen-incorporated tetrahedral amorphous carbon optically transparent thin film electrode25
Determination of recombination coefficients for hydrogen, oxygen, and nitrogen gasses via in situ radical probe system23
Impact of sputtering and redeposition on the morphological profile evolution during ion-beam etching of blazed gratings22
Analysis of pulsed direct current reactive magnetron sputtering on a silicon target22
Erratum: “Acquisition and analysis of scanning tunneling spectroscopy data—WSe2 monolayer” [J. Vac. Sci. Technol. A 39, 011001 (2021)]22
Elusive supported surface M2Ox dimer active site (M = Re, W, Mo, Cr, V, Nb, and Ta)22
Atomic layer deposition of sodium fluoride thin films22
Promoting subsurface Sn incorporation at Nb(100) oxide surface sites leading to homogeneous Nb3Sn film growth for superconducting radiofrequency applications22
Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy22
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