Journal of Vacuum Science & Technology A

Papers
(The H4-Index of Journal of Vacuum Science & Technology A is 24. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)
ArticleCitations
Self-powered solar blind ultraviolet photodetector based on amorphous (In0.23Ga0.77)2O3/bixbyite (In0.67Ga0.33)2O3 heterojunction128
Implementation of an artificial spiking neuron with photoreceptor functionality using gas discharge tubes86
Enhancing chemical vapor deposition growth and fabrication techniques to maximize hole conduction in tungsten diselenide for monolithic CMOS integration75
Friction and wear behavior of C implanted copper via ion beam-assisted bombardment68
In situ metal organic chemical vapor deposition of ultrathin sp2-bonded boron nitride dielectric on gallium nitride64
Peak intensities in Auger electron spectroscopy for quantification: Relationship between differentiated spectral intensities and direct peak areas63
Nitrogen-incorporated tetrahedral amorphous carbon optically transparent thin film electrode58
Novel principal component analysis tool based on python for analysis of complex spectra of time-of-flight secondary ion mass spectrometry48
Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage46
Structural, electronic, and thermodynamic properties of Li3X (X = N, P, As) compounds for solid-state lithium-ion batteries38
Study on the modification of TC11 titanium alloy microarc oxidized film layer by ZrO2 particles38
Comparing sputter rates, depth resolution, and ion yields for different gas cluster ion beams (GCIB): A practical guide to choosing the best GCIB for every application36
Understanding the unique optical and vibrational signatures of sequential infiltration synthesis derived indium oxyhydroxide clusters for CO2 absorption35
Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface32
Cathodoluminescence of β-Ga2O3:Fe (2¯01) irradiated with boron ions30
Erratum: “MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy” [J. Vac. Sci. Technol. A 42, 050401 (2024)]30
Using auxiliary electrochemical working electrodes as probe during contact glow discharge electrolysis: A proof of concept study29
Core-shell metallic nanotube arrays for highly sensitive surface-enhanced Raman scattering (SERS) detection29
Application of high-spatial-resolution distributed fiber-optic sensing technique for neutral gas temperature mapping in inductively coupled Ar plasmas29
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition27
High surface quality Y2SiO5 silicate-crystal waveguides etched by chlorine-based inductive coupled plasma reactive ion etching26
GaN lateral pn junctions by MBE in situ selective area sublimation and regrowth26
Hardness, adhesion, and wear behavior of magnetron cosputtered Ti:Zr-O-N thin films26
Effects of duty cycle and nitrogen flow rate on the mechanical properties of (V,Mo)N coatings deposited by high-power pulsed magnetron sputtering25
Transport and trap states in proton irradiated ultra-thick κ-Ga2O324
Testing commonly used background removal procedures for XPS quantitation of homogeneous material: Fe2O3, a transition metal oxide example24
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