Journal of Vacuum Science & Technology A

Papers
(The H4-Index of Journal of Vacuum Science & Technology A is 22. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)
ArticleCitations
Practical guides for x-ray photoelectron spectroscopy (XPS): Interpreting the carbon 1s spectrum266
Assessment of the frequency and nature of erroneous x-ray photoelectron spectroscopy analyses in the scientific literature121
Practical guide to the use of backgrounds in quantitative XPS92
Many routes to ferroelectric HfO2: A review of current deposition methods73
Thermal atomic layer etching: A review73
Next generation nanopatterning using small molecule inhibitors for area-selective atomic layer deposition63
Ion implantation in β-Ga2O3: Physics and technology52
Introduction to topical collection: Reproducibility challenges and solutions with a focus on guides to XPS analysis47
Effect of metal contacts on (100) β-Ga2O3 Schottky barriers45
Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance44
Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers34
Epitaxial integration of BaTiO3 on Si for electro-optic applications32
High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O330
Diffusion of dopants and impurities in β-Ga2O330
Systematic compositional analysis of sputter-deposited boron-containing thin films29
Quantum dot lasers—History and future prospects27
Guide to XPS data analysis: Applying appropriate constraints to synthetic peaks in XPS peak fitting27
Magnetron sputtering25
Correlation between electrical conductivity and luminescence properties in β-Ga2O3:Cr3+ and β-Ga2O3:Cr,Mg single crystals24
Critical review of Ohmic and Schottky contacts to β-Ga2O322
Searching for superconductivity in high entropy oxide Ruddlesden–Popper cuprate films22
Conversion reactions in atomic layer processing with emphasis on ZnO conversion to Al2O3 by trimethylaluminum22
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