Journal of Vacuum Science & Technology A

Papers
(The H4-Index of Journal of Vacuum Science & Technology A is 24. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-06-01 to 2026-06-01.)
ArticleCitations
Self-powered solar blind ultraviolet photodetector based on amorphous (In0.23Ga0.77)2O3/bixbyite (In0.67Ga0.33)2O3 heterojunction108
Implementation of an artificial spiking neuron with photoreceptor functionality using gas discharge tubes68
Enhancing chemical vapor deposition growth and fabrication techniques to maximize hole conduction in tungsten diselenide for monolithic CMOS integration66
Friction and wear behavior of C implanted copper via ion beam-assisted bombardment61
In situ metal organic chemical vapor deposition of ultrathin sp2-bonded boron nitride dielectric on gallium nitride60
Peak intensities in Auger electron spectroscopy for quantification: Relationship between differentiated spectral intensities and direct peak areas58
Nitrogen-incorporated tetrahedral amorphous carbon optically transparent thin film electrode52
Novel principal component analysis tool based on python for analysis of complex spectra of time-of-flight secondary ion mass spectrometry45
Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage41
Study on the modification of TC11 titanium alloy microarc oxidized film layer by ZrO2 particles37
Structural, electronic, and thermodynamic properties of Li3X (X = N, P, As) compounds for solid-state lithium-ion batteries34
Comparing sputter rates, depth resolution, and ion yields for different gas cluster ion beams (GCIB): A practical guide to choosing the best GCIB for every application33
Understanding the unique optical and vibrational signatures of sequential infiltration synthesis derived indium oxyhydroxide clusters for CO2 absorption32
Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface30
Erratum: “MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy” [J. Vac. Sci. Technol. A 42, 050401 (2024)]27
Cathodoluminescence of β-Ga2O3:Fe (2¯01) irradiated with boron ions27
Applications and mechanisms of anisotropic two-step Si3N4 etching with hydrogen plasma conditioning26
Application of high-spatial-resolution distributed fiber-optic sensing technique for neutral gas temperature mapping in inductively coupled Ar plasmas26
Core-shell metallic nanotube arrays for highly sensitive surface-enhanced Raman scattering (SERS) detection25
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition25
High surface quality Y2SiO5 silicate-crystal waveguides etched by chlorine-based inductive coupled plasma reactive ion etching25
Using auxiliary electrochemical working electrodes as probe during contact glow discharge electrolysis: A proof of concept study25
Hardness, adhesion, and wear behavior of magnetron cosputtered Ti:Zr-O-N thin films25
Effects of duty cycle and nitrogen flow rate on the mechanical properties of (V,Mo)N coatings deposited by high-power pulsed magnetron sputtering24
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