Journal of Vacuum Science & Technology A

Papers
(The H4-Index of Journal of Vacuum Science & Technology A is 21. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)
ArticleCitations
Hardness, adhesion, and wear behavior of magnetron cosputtered Ti:Zr-O-N thin films89
Self-powered solar blind ultraviolet photodetector based on amorphous (In0.23Ga0.77)2O3/bixbyite (In0.67Ga0.33)2O3 heterojunction70
Erratum: “Microscopic origins of radiative performance losses in thin-film solar cells at the example of (Ag,Cu)(In,Ga)Se2 devices” [J. Vac. Sci. Technol. A 42, 022803 (2024)]57
Transport and trap states in proton irradiated ultra-thick κ-Ga2O355
Erratum: “MoS2-assisted growth of highly-oriented AlN thin films by low-temperature van der Waals epitaxy” [J. Vac. Sci. Technol. A 42, 050401 (2024)]52
High surface quality Y2SiO5 silicate-crystal waveguides etched by chlorine-based inductive coupled plasma reactive ion etching48
Implementation of an artificial spiking neuron with photoreceptor functionality using gas discharge tubes42
Enhancing chemical vapor deposition growth and fabrication techniques to maximize hole conduction in tungsten diselenide for monolithic CMOS integration37
Friction and wear behavior of C implanted copper via ion beam-assisted bombardment33
Novel principal component analysis tool based on python for analysis of complex spectra of time-of-flight secondary ion mass spectrometry32
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition30
In situ metal organic chemical vapor deposition of ultrathin sp2-bonded boron nitride dielectric on gallium nitride29
On the interplay between a novel iron and iron-carbide atomic layer deposition process, the carbon nanotube growth, and the metal–carbon nanotube coating properties on silica substrates27
Peak intensities in Auger electron spectroscopy for quantification: Relationship between differentiated spectral intensities and direct peak areas26
Use of in situ electrical conductance measurements to understand the chemical mechanisms and chamber wall effects during vapor phase infiltration doping of poly(aniline) with TiCl4 + H2O23
Applications and mechanisms of anisotropic two-step Si3N4 etching with hydrogen plasma conditioning22
Effects of duty cycle and nitrogen flow rate on the mechanical properties of (V,Mo)N coatings deposited by high-power pulsed magnetron sputtering22
Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage22
Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O321
Plasma enhanced atomic layer etching of high-k layers on WS221
Nitrogen-incorporated tetrahedral amorphous carbon optically transparent thin film electrode21
Tailoring structure, morphology, and tribo-mechanical properties of HiPIMS-deposited CrxNy coatings for enhanced performance in wear and corrosion protection21
Analysis of pulsed direct current reactive magnetron sputtering on a silicon target21
Comparing sputter rates, depth resolution, and ion yields for different gas cluster ion beams (GCIB): A practical guide to choosing the best GCIB for every application21
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