Semiconductor Science and Technology

Papers
(The TQCC of Semiconductor Science and Technology is 5. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-05-01 to 2025-05-01.)
ArticleCitations
Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL64
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements61
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices58
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 35 1250144
The surface tension of Ga2O3 melt measured by a drop-weight method in an optical floating-zone furnace44
Transient analysis of graphene-based on-chip interconnects using closed-form MRA model38
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors31
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer31
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach30
The ab initio study of n-type nitrogen and gallium co-doped diamond30
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor30
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate29
Bidirectional threshold switching in Pt/Ag:Ni(OH)2/Pt structure29
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity27
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems27
Germanium thin film manufacturing using covalent bonding process26
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing26
Printed in-plane electrolyte-gated transistor based on zinc oxide25
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance25
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications25
Tunnel hole injection in unipolar HgCdTe-based laser diode24
An all-optical equalizer SWAP gate (ESG)24
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD22
Design and implementation of an inverter and its application in ring oscillator circuits using an organic-thin-film-transistor based on an FTM-derived channel22
MISHEMT intrinsic voltage gain under multiple channel output characteristics22
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET22
Modeling dislocation-related reverse bias leakage in GaN p–n diodes22
Electrical transport properties of highly doped N-type GaN materials20
Study of Ge-on-Si avalanche photodiodes for short-wave infrared applications20
Impact of mercury vacancy states on Shockley–Read–Hall recombination in narrow gap HgCdTe19
Influence of anti-reflection coatings on double GaAs/Si heterojunction layers in Si solar cells18
In2O3 decorated TiO2 for broadband photosensing applications18
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices18
Enhanced photodetector performance of SnO2/NiO heterojunction via Au incorporation17
Straightforward synthesis and mechanism insight of TiO2/α′-AgVO3 heterostructure with enhanced photocatalytic activity17
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance17
Schottky barrier engineering in metal/semiconductor structures for high thermal stability16
Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity16
Indirect stress and air-cavity displacement measurement of MEMS tunable VCSELs via micro-Raman and micro-photoluminescence spectroscopy15
Impact of source doping profile on the performance of CNT TFETs and MOSFETs: design aspects for fabrication tolerance15
Enhancing multi-functionality of reconfigurable transistors by implementing high retention capacitorless dynamic memory15
High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors15
Power spectral density-based fractal analyses of sputtered yttria-stabilized zirconia thin films15
Low-resistive gate module for RF GaN-HFETs by electroplating15
Accurate band alignment of sputtered Sc2O3 on GaN for high electron mobility transistor applications15
Drop-dry deposition of Co3O4 and fabrication of heterojunction solar cells with electrochemically deposited ZnO14
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs14
Rapid microwave annealing of CH3NH3PbI3 with controllable crystallization for enhancing the resistive-switching performance13
Classification of different post-hyperdoping treatments for enhanced crystallinity of IR-sensitive femtosecond-laser processed silicon13
Comparative performance analysis and material exploration of ECO-friendly highly efficient perovskite solar cells13
The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET13
Recent advances and optoelectronic applications of Cu–Ag–Bi–I quaternary lead-free perovskites13
Enhancing light trapping for improved efficiency of perovskite solar cells: design and analysis13
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance *12
Nanoscale wafer patterning using SPM induced local anodic oxidation in InP substrates12
Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications12
Remarkably improved Curie temperature for two-dimensional CrI3 by gas molecular adsorption: a DFT study12
Effect of dual-channel structures on DC characteristics of vertical trench GaN-based MOSFETs12
Increasing the scope and precision of the steady-state photocarrier grating technique by measuring the photocurrents at several voltages12
Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recovery12
Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission12
STDP implementation using multi-state spin−orbit torque synapse12
Design and optimization of DTSCR for high-speed I/O ESD protection of on-chip ICs11
Sub-2 nm boron doping in silicon using novel ultra-thin SiO2 film produced by sol–gel dip coating as a capping layer11
Low-temperature preparation and characteristics of top-gate thin-film transistors with La-ZTO active layers and polymethylmethacrylate dielectric layers11
Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors11
Shallow donor states and interlevel transitions in gapped graphene bilayers11
Thermal conductivity and phonon scattering of AlGaN nanofilms by elastic theory and Boltzmann transport equation11
Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs10
Dual-mode dendritic devices enhanced neural network based on electrolyte gated transistors10
Effects of microwave plasma treatment on β-Ga2O3 Schottky barrier diodes10
Optimizing photocurrent intensity in layered SiGe heterostructures10
Photoluminescence of an InSb layer on a germanium substrate10
High performance AlGaN/GaN MISHEMTs using N2O treated TiO2 as the gate dielectric10
Insights into the growth of hexagonal Si crystals using Al-based nano absorber10
The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs10
Multi-stage infrared detectors10
Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors10
The effect of selenium ion concentration on zinc selenide thin films prepared by a photo-assisted chemical bath deposition method10
Intersection of 4H-SiC Schottky diodes I–V curves due to temperature dependent series resistance10
Unveiling the potential of photonic crystal surface emitting lasers: a concise review10
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy9
Influence of the nature of the distribution of recombination centers in the space charge region of the p–n junction on the parameters of the current–voltage characteristics within the classical Shockl9
Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect9
Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities9
Sub-bandgap photoresponse and leakage current analysis in gold thin film-hyperdoped silicon photodiodes9
Composition-graded quantum barriers improve performance in InGaN-based laser diodes9
Hydroxylation-induced defect states and formation of a bidentate acetate adstructure of TiO2 catalysts with acetic acid variation for catalytic application9
Pre-metal dielectric PE TEOS oxide pitting in 3D NAND: mechanism and solutions9
Survey, taxonomy, and methods of QCA-based design techniques—part I: digital circuits9
Ridge-channel AlGaN/GaN normally-off high-electron mobility transistor based on epitaxial lateral overgrowth9
Effect of UV irradiation on the resistive switching characteristics of low-temperature solution-processed ZrO2 RRAM9
Optimization of tin-based inverted perovskite solar cell with MoS2 interlayer by one-dimensional simulation9
Improving CZTS/ZTO solar cell efficiency with inorganic BSF layers8
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization8
The conductivity and electrophysical characteristics of Janus-like TaSi2/Si nanoparticles8
Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors8
Cu2ZnSnS4/CeO2 heterojunction with excellent sensing property for ammonia nitrogen in aqueous solution8
Enhanced resistive switching performance of TiO2 based RRAM device with graphene oxide inserting layer8
Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures8
Estimation of performance degradation due to interface traps in the gate and spacer stack of NC-FinFET8
Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric8
Transport and performance study of double-walled black phosphorus nanotube transistors8
Characterization of PECVD Si3N4 thin film in multiple oxide–nitride stack for 3D-NAND flash memory8
Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation8
Annealing-dependent changes in the structural and electrical properties of NiO epitaxial films8
A review of quantum transport in field-effect transistors8
Resistor-to-Schottky barrier analytical model for ohmic contact test structures8
Applications of time-resolved photoluminescence for characterizing silicon photovoltaic materials8
Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation8
A novel dual-gate negative capacitance TFET for highly sensitive label free biosensing8
A BP-Smith combined temperature control method for thin film preparation processing8
Air-spacers as analog-performance booster for 5 nm-node N-channel nanosheet transistor8
Investigation on performance degradation due to induced interface trapped charges on HSO based FDSOI NCFET and sustaining it through back-gate bias8
Temperature- and gate voltage-dependent I–V modeling of GaN HEMTs based on ASM-HEMT8
Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy8
A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition8
Fermi energy-level shift of p-type AgBiSe2 single crystal featuring semiconductor-to-metal transition at cryogenics7
Recent progress in III-nitride nanosheets: properties, materials and applications7
Enhancement-mode normally-off β-Ga2O3:Si metal-semiconductor field-effect deep-ultraviolet phototransistor7
A facile method of deriving solar selective nickel-cobalt oxide thin films via spraying process7
Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets7
Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layers7
The thermo-E.M.F. of an n-type silicon: assessment of the contribution due to the presence of minority carriers7
Broadband photodetectors based on PbS quantum dots synthesized using the multiple injection growth method7
Row hammer-induced D0 failure improvement in sub-20 nm DRAM using an air gap7
Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation7
InGaAs self-switching diode-based THz bridge rectifier7
A 35 V–5 V monolithic integrated GaN-based DC–DC floating buck converter7
Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers7
A novel SiC power MOSFET with integrated polySi/SiC heterojunction freewheeling diode7
The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process7
Effect of different layer structures on the RF performance of GaN HEMT devices7
High-performance narrow spectrum green phosphorescent top-emitting organic light-emitting devices with external quantum efficiency up to 38%7
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin7
DFT study of the structural, electronic and optoelectronic properties of PDAPb(I1−x Br x )4 perovskites7
Inverter design with positive feedback field-effect transistors7
Computational investigation on the photovoltaic performance of an efficient GeSe-based dual-heterojunction thin film solar cell7
Internal optical loss and internal quantum efficiency of a high-power GaAs laser operating in the CW mode7
Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs7
Domain boundaries in ScAlMgO4 single crystal observed by synchrotron radiation x-ray topography and reticulography7
Low contact resistivity of Ti/TiN/Al for NiSi2 on epitaxial Si:P structure at full low-temperature process below 450 °C7
Highly sensitive and selective sub ppb level acetone sensing platform based on Co3O4–ZnO heterojunction composites7
Design and simulation of a III-Nitride light emitting transistor7
The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects7
Electronic transport properties of WS2 using ensemble Monte Carlo method7
Theoretical investigation to study the influence of strain on the band lineups of core/shell nanostructures7
Multi functional ionic Ru(bpy)3(PF6)2 assisted preparation of perovskite solar cell with over 19% and superior stability7
The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon7
Study on the series resistance of betavoltaic batteries7
Investigation of LVTSCR ESD protection devices with RC-INV triggering circuits7
Helical liquids in semiconductors7
α-Fe2O3/ZnO heterostructure for enhanced photocatalytic and antibacterial activity7
Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures7
Effects of pulsed Al injection on InGaN/GaN multi-quantum well structures grown by MOCVD7
The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems7
A radiation-hardened hybrid RRAM-based non-volatile latch6
Comparative study of III-phosphide- and III-nitride-based light-emitting diodes: understanding the factors limiting efficiency6
Acetone discriminator and concentration estimator for diabetes monitoring in human breath6
Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs6
CMOS compatible manufacturing of a hybrid SET-FET circuit6
The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs6
A critique of length and bias dependent constraints for 1T-DRAM operation through RFET6
Investigation of breakdown voltage degradation in low-voltage narrow gate trench MOSFET by edge termination optimization6
Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire6
Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits6
Study on memory characteristics of fin-shaped feedback field effect transistor6
High performance solar-blind photodetectors based on MOCVD grown β6
Proton irradiation influence on gate-channel low-field carrier mobility of AlGaN/GaN HEMTs6
High mobility Ge 2DHG based MODFETs for low-temperature applications6
Surface defects in 4H-SiC: properties, characterizations and passivation schemes6
Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics6
Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension6
On the performance of hafnium-oxide-based negative capacitance FinFETs, with and without a spacer6
Quantitative characterization of self-heating effects in GaN-on-diamond HEMTs with 3C-SiC interfacial layer6
Broadband plasmonic absorption enhancement of perovskite solar cells with embedded Au@SiO2@graphene core–shell nanoparticles6
Retraction: Potential application of AlP nanosheet semiconductor in the detection of toxic phosgene, thiophosgene, and formaldehyde gases (2022 Semicond. Sci. Technol. 37 095015)6
A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses6
Photosensitive Schottky diodes based on nanostructured thin films of graphitized carbon formed on Cd1− x Zn 6
Calculation of discrete and resonant states of Coulomb acceptor in HgCdTe alloys6
Ti supersaturated Si by microwave annealing processes6
First-principles study on the physical properties of Al-based wide-bandgap perovskites Cs3AlIxBr6-x for optoelectronic applications6
Influence of swift heavy ion irradiation on electrical characteristics of β-Ga2O3 Schottky barrier diode6
Study of traps in low-temperature polysilicon thin film transistors using a current transient method6
Influence of substrate biasing on structural, chemical and electrical properties of Al2O3 thin films deposited by PEALD6
Terahertz monolithic integrated narrow-band filter based on the silicon carbide substrate6
Highly efficient stable blue organic light-emitting diodes based on a novel anthracene[2,3-b]benzofuran framework6
GaAs nanocone array-based hybrid solar cells with excellent light-trapping capabilities and enhanced photogeneration rate6
Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb type-II superlattice photodiodes6
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures6
Novel Omega-Gate heterojunction tunneling FET with a new analytical model6
Nanoindentation mechanical studies of bulk AlN single crystals with different orientations6
DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation6
Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)6
High-detectivity ultraviolet-B photodetector based on SnO2 thin film/Si heterojunction6
Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT6
Design, optimization, and analysis of Si and GaN nanowire FETs for 3 nm technology6
Optimizing CuInSe2 solar cells with kesterite-based upper absorber and back surface field layers for enhanced efficiency: a numerical study6
Donor implanted back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems5
A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs5
Improving the accuracy and robustness of RRAM-based in-memory computing against RRAM hardware noise and adversarial attacks5
Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout5
Impact of pyrolysis temperature on physicochemical properties of carbon nitride photocatalyst5
Simulation and modeling of a new CsSnI3 solar cell structure: a numerical study5
A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same5
OxRAM + OTS optimization for binarized neural network hardware implementation5
Permittivity modulation in Si-based PIN diode by electron irradiation5
A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect5
Exploiting the electrothermal timescale in PrMnO3 RRAM for a compact, clock-less neuron exhibiting biological spiking patterns5
Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET*5
Investigation of 4,4′-bis[(N- carbazole) styryl] biphenyl (BSB4) for a pure blue fluorescent OLED with enhanced efficiency nearing the theoretical limit5
Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition5
On the photoresponse regulations by deep-level traps in CsPbBr3 single crystal photodetectors5
Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method5
A flexible and ultra-highly sensitive tactile sensor based on Mg-doped ZnO nanorods for human vital signs and activity monitoring5
Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials5
High-responsivity silicon p–i–n mesa-photodiode5
Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000 nm communication and sensing applications5
Recent progress in red light-emitting diodes by III-nitride materials5
Superjunction MOSFET with a trench contact on partly relatively lightly doped P-pillar for excellent reverse recovery5
Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation5
The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films5
A SiC sidewall enhanced trench JBS diode with improved forward performance5
Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO2/HfO2 stacked dielectric5
Effect of GaN-on-diamond integration technology on its thermal properties5
Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers5
Simulation study of a novel GaN on Si quasi-vertical reverse-conducting insulated gate bipolar transistor5
Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high I on/I off5
Superjunction IGBT with split carrier storage layer5
Demonstrating the electron blocking effect of AlGaN/GaN superlattice cladding layers in GaN-based laser diodes5
Improved electrical properties of AlGaN/GaN MIS-HEMTs with thermal and plasma-enhanced ALD Al2O3 gate dielectric5
Preparation and operating characteristics analysis of high-speed iron phthalocyanine organic phototriode5
Zinc oxide-based sensor prepared by modified sol–gel route for detection of low concentrations of ethanol, methanol, acetone, and formaldehyde5
Study on low-temperature evaporation of Ag2O-based Ag electrode and electron injection layer and their application in OLEDs5
Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis5
Non-ideal program-time conservation in charge trap flash for deep learning5
Analytic electrostatic model of amorphous-crystalline Ge2Sb2Te5 heterojunction5
Computer simulation of the operational characteristics of a microstrip silicon detector5
Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer5
Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A5
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