Semiconductor Science and Technology

Article	Citations
The effect of Si ion implantation on the electrical properties of InP thin film on Si(100) substrate fabricated by ion-cutting technique	109
Tunnel hole injection in unipolar HgCdTe-based laser diode	60
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate	57
Trench super junction power device by plasma doping: a structural, chemical-physical, and profiling investigation	45
The ab initio study of n-type nitrogen and gallium co-doped diamond	45
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity	41
MISHEMT intrinsic voltage gain under multiple channel output characteristics	41
A TCAD-based study on the design and performance of VOFET-based CMOS-like inverters	36
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach	32
Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL	32
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications	31
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer	28
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices	27
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors	25
The surface tension of Ga2O3 melt measured by a drop-weight method in an optical floating-zone furnace	22
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD	22
Microscopic electroluminescence images of 850 nm oxide-confined VCSELs during burn-in	21
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor	20
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol.<	20
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance	20
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements	19
Enhanced breakdown voltage in GaN vertical trench MOSFETs through mesa-trench field balancing and mesa shielding ring structure	19
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET	19
First-principles study on the design and performance optimization of MoS ₂ - and SnS 2 -based RRAM	18
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems	18

A novel SiC superjunction trench MOSFET with integrated heterojunction diode for reduced power loss and saturation current	18
Classification of different post-hyperdoping treatments for enhanced crystallinity of IR-sensitive femtosecond-laser processed silicon	17
Investigation of maximum gain amplifier using a split-stacked recessed gate design on β-Ga2O3 MOSFET for S-band applications	17
Influence of anti-reflection coatings on double GaAs/Si heterojunction layers in Si solar cells	16
Straightforward synthesis and mechanism insight of TiO2/α′-AgVO3 heterostructure with enhanced photocatalytic activity	16
A novel V-grooved vertical GaN-based HEMT on silicon utilizing 2DEG for enhanced performance	15
The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET	15
Study of Ge-on-Si avalanche photodiodes for short-wave infrared applications	14
The impact of composite defects Vi O(Ga) on the electrical properties of β-Ga2O3/AlN heterojunctions	14
Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity	14
Enhanced photodetector performance of SnO2/NiO heterojunction via Au incorporation	14
Accurate band alignment of sputtered Sc2O3 on GaN for high electron mobility transistor applications	14
Power spectral density-based fractal analyses of sputtered yttria-stabilized zirconia thin films	14
In2O3 decorated TiO2 for broadband photosensing applications	13
Optical characterization of deep-level defects in n-type Al x In	13
Impact of mercury vacancy states on Shockley–Read–Hall recombination in narrow gap HgCdTe	13
Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas	13
Enhancing light trapping for improved efficiency of perovskite solar cells: design and analysis	13
Comparative performance analysis and material exploration of ECO-friendly highly efficient perovskite solar cells	13
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs	13
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices	12
The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs	12
High performance AlGaN/GaN MISHEMTs using N2O treated TiO2 as the gate dielectric	12
Negative differential resistance in glutathione-functionalized MoS 2 quantum dot-based resistive switching devices	12
Intersection of 4H-SiC Schottky diodes I–V curves due to temperature dependent series resistance	12
Low-resistive gate module for RF GaN-HFETs by electroplating	12
Effects of microwave plasma treatment on β-Ga2O3 Schottky barrier diodes	12
Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recovery	11
Low-temperature preparation and characteristics of top-gate thin-film transistors with La-ZTO active layers and polymethylmethacrylate dielectric layers	11
Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications	11
A high-speed avalanche photodiode with large coupling tolerance	11
Effect of dual-channel structures on DC characteristics of vertical trench GaN-based MOSFETs	11
Optimizing photocurrent intensity in layered SiGe heterostructures	11
Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission	11
Shallow donor states and interlevel transitions in gapped graphene bilayers	11
Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors	10
The effect of selenium ion concentration on zinc selenide thin films prepared by a photo-assisted chemical bath deposition method	10
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance *	10
Multi-stage infrared detectors	10
Structural and optical evolution of compressively strained Ge0.965Sn0.035 films on silicon undergoing microwave annealing	10
Efficacy of π-Gate in LDMOS for Improved Safe Operating Area and Figure of Merits	10
Survey, taxonomy, and methods of QCA-based design techniques—part I: digital circuits	9
Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities	9
Influence of the nature of the distribution of recombination centers in the space charge region of the p–n junction on the parameters of the current–voltage characteristics within the classical Shockl	9
Enhanced resistive switching performance of TiO2 based RRAM device with graphene oxide inserting layer	9
Unveiling the potential of photonic crystal surface emitting lasers: a concise review	9
Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy	9
Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation	9
Design and investigation of a label-free biosensor based on dual material gate heterostructure pocket tunneling field-effect transistor	9
Resistor-to-Schottky barrier analytical model for ohmic contact test structures	9

Estimation of performance degradation due to interface traps in the gate and spacer stack of NC-FinFET	9
Temperature- and gate voltage-dependent I–V modeling of GaN HEMTs based on ASM-HEMT	9
Effect of annealing temperature on the optoelectronic properties of quinary amorphous oxide semiconductor IGZTO thin films	9
Ellipsometric study of TlInS 2 chalcogenide crystals: exploring their potential in nonlinear optics and optoelectronics	9
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy	9
Recent advances and optoelectronic applications of Cu–Ag–Bi–I quaternary lead-free perovskites	9
Applications of time-resolved photoluminescence for characterizing silicon photovoltaic materials	9
7 kV/16.5 mΩ·cm 2 E-mode active-passivation p-GaN gate HEMT exceeding SiC unipolar limit	9
Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect	9
Structural and thermodynamic stability in hexagonal-diamond	9
Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures	9
A BP-Smith combined temperature control method for thin film preparation processing	8
Two-waveguide approach for monolithic active/passive photonic integration on GaAs	8
A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition	8
Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures	8
Fermi energy-level shift of p-type AgBiSe2 single crystal featuring semiconductor-to-metal transition at cryogenics	8
A novel double-channel sic trench MOSFET realized by integrating n-PolySi/sic heterojunction tunneling transistor	8
Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation	8
DFT study of the structural, electronic and optoelectronic properties of PDAPb(I1−x Br x )4 pero	8
The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon	8
Investigation of LVTSCR ESD protection devices with RC-INV triggering circuits	8
Investigation on performance degradation due to induced interface trapped charges on HSO based FDSOI NCFET and sustaining it through back-gate bias	8
Sub-bandgap photoresponse and leakage current analysis in gold thin film-hyperdoped silicon photodiodes	8
Annealing-dependent changes in the structural and electrical properties of NiO epitaxial films	8
Hetero-dielectric step-shaped double-gate TFET on SELBOX substrate with SiGe pocket: suppressed ambipolarity, comprehensive DC, RF, and noise performance evaluation under thermal variation	8
Theoretical investigation to study the influence of strain on the band lineups of core/shell nanostructures	8
Optimization of a novel β -Ga 2 O 3 vertical FinFET	8
Influence of Aluminium Incorporation on the Semiconducting Properties of P-type Tin Monoxide	8
Improving CZTS/ZTO solar cell efficiency with inorganic BSF layers	8
Optimization of tin-based inverted perovskite solar cell with MoS2 interlayer by one-dimensional simulation	8
Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors	8
Domain boundaries in ScAlMgO4 single crystal observed by synchrotron radiation x-ray topography and reticulography	8
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin	8
Low-voltage-triggered SCR with resistor-capacitance detection circuit for ESD protection of SPAD readout circuits	8
Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs	8
Tailoring Al2O3 deposition temperature for enhanced electrical performance and reliability of IGZO thin-film transistors	7
Broadband photodetectors based on PbS quantum dots synthesized using the multiple injection growth method	7
Transport and performance study of double-walled black phosphorus nanotube transistors	7
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization	7
Characterization of PECVD Si3N4 thin film in multiple oxide–nitride stack for 3D-NAND flash memory	7
The conductivity and electrophysical characteristics of Janus-like TaSi2/Si nanoparticles	7
Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb type-II superlattice photodiodes	7
A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses	7
Ti supersaturated Si by microwave annealing processes	7
Highly efficient stable blue organic light-emitting diodes based on a novel anthracene[2,3-b]benzofuran framework	7
The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process	7
A novel dual-gate negative capacitance TFET for highly sensitive label free biosensing	7
Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets	7
Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric	7
A 35 V–5 V monolithic integrated GaN-based DC–DC floating buck converter	7
Sustainable magnesiothermic reduction of rice husk ash–derived silica: comparative effects of NaCl and KCl molten salts on silicon microstructure and electrical properties	7
Effect of two-dimensional nonlocal screening on mobility of electrons in transition-metal dichalcogenide monolayers	7
A critique of length and bias dependent constraints for 1T-DRAM operation through RFET	7
The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects	7
Photosensitive Schottky diodes based on nanostructured thin films of graphitized carbon formed on Cd1− x Zn	7
Multi functional ionic Ru(bpy) 3 (PF 6 ) 2 assi	7
Row hammer-induced D0 failure improvement in sub-20 nm DRAM using an air gap	7
Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers	7
Study on the series resistance of betavoltaic batteries	7
The thermo-E.M.F. of an n-type silicon: assessment of the contribution due to the presence of minority carriers	7
Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layers	7
Electronic transport properties of WS2 using ensemble Monte Carlo method	7
Effective control of active interface traps in GaN HEMT epitaxial layers by stress tuning of SiN x passivation layers	7
Advanced trench junction barrier Schottky integrated SiC trench MOSFET with improved switching oscillation suppression	7
Retraction: Potential application of AlP nanosheet semiconductor in the detection of toxic phosgene, thiophosgene, and formaldehyde gases (2022 Semicond. Sci. Technol.	7
Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics	6
Cryogenic coating technique for performance recovery in silicon solar cells	6
Proton irradiation influence on gate-channel low-field carrier mobility of AlGaN/GaN HEMTs	6
Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)	6
Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT	6
Design and simulation of a III-Nitride light emitting transistor	6
Optimizing CuInSe2 solar cells with kesterite-based upper absorber and back surface field layers for enhanced efficiency: a numerical study	6
Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method	6
Recent advances in heterojunction engineering of β -Ga 2 O 3	6
Frequency-dependent threshold voltage instability in hydrogen-terminated diamond MOSFETs under dynamic gate-bias stress	6
Stress analysis and characterization of TEOS-based PECVD fabricated SiO2 solid films after thermal annealing	6
Terahertz monolithic integrated narrow-band filter based on the silicon carbide substrate	6
Quantitative characterization of self-heating effects in GaN-on-diamond HEMTs with 3C-SiC interfacial layer	6
Nanoindentation mechanical studies of bulk AlN single crystals with different orientations	6
Electro-thermal analysis of device geometry dependence on the amorphous cap size in phase change memory devices	6

First-principles study on the physical properties of Al-based wide-bandgap perovskites Cs3AlIxBr6-x for optoelectronic applications	6
Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire	6
Influence of swift heavy ion irradiation on electrical characteristics of β-Ga2O3 Schottky barrier diode	6
Channeling step shielding MOSFET design for improved short-circuit withstand time and UIS energy in 1200 V SiC devices	6
CMOS compatible manufacturing of a hybrid SET-FET circuit	6
Experimental study of the effect of neutron radiation on a super-junction IGBT	6
Optimizing deposition parameters for CBD-grown CdS thin films: insights into morphology, optical, and electrical properties for optoelectronic applications	6
Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs	6
High performance solar-blind photodetectors based on MOCVD grown β	6
A facile method of deriving solar selective nickel-cobalt oxide thin films via spraying process	6
The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs	6
Surface defects in 4H-SiC: properties, characterizations and passivation schemes	6
High mobility Ge 2DHG based MODFETs for low-temperature applications	6
GaAs nanocone array-based hybrid solar cells with excellent light-trapping capabilities and enhanced photogeneration rate	6
Preparation and operating characteristics analysis of high-speed iron phthalocyanine organic phototriode	5
A flexible and ultra-highly sensitive tactile sensor based on Mg-doped ZnO nanorods for human vital signs and activity monitoring	5
Impact of pyrolysis temperature on physicochemical properties of carbon nitride photocatalyst	5
Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation	5
Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis	5
Impact of Active Area and Gate Line Width Roughness on SRAM Stability: Role of Low-Frequency Noise and Process Variability in Advanced IC Manufacturing	5
Improved electrical properties of AlGaN/GaN MIS-HEMTs with thermal and plasma-enhanced ALD Al2O3 gate dielectric	5
Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000 nm communication and sensing applications	5
Permittivity modulation in Si-based PIN diode by electron irradiation	5
A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs	5
High-responsivity silicon p–i–n mesa-photodiode	5
Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer	5
Demonstrating the electron blocking effect of AlGaN/GaN superlattice cladding layers in GaN-based laser diodes	5
Enhanced Selective Etching of SiON Using Low-GWP C 3 F 6 as an Alternative to CF 4 in Low-Bias-Power Inductively Coupled Plasmas	5
A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same	5
Flexible 3C-SiC strain-sensing layers transferred from silicon substrates by mechanical exfoliation	5
Dual-gate material H-channel vertical DGTFET: design, simulation and optimisation study	5
Effect of gas pre-decomposition device on the growth of GaN epitaxial layer	5
Superjunction IGBT with split carrier storage layer	5
Bias-selectable three-color InAs/GaSb superlattice infrared detectors based on a resonant tunneling barrier	5
Zinc oxide-based sensor prepared by modified sol–gel route for detection of low concentrations of ethanol, methanol, acetone, and formaldehyde	5
Study on low-temperature evaporation of Ag2O-based Ag electrode and electron injection layer and their application in OLEDs	5
Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials	5
High-performance AlGaN ultraviolet light-emitting diode with a tunnel junction based on inverted architecture	5
On the photoresponse regulations by deep-level traps in CsPbBr3 single crystal photodetectors	5
Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET*	5
A surface plasmonic coupled mid-long-infrared quantum well detector	5
a-plane GaN-based Fully Vertical FinFETs with Normally-off Operation	5
Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout	5
Simulation and modeling of a new CsSnI3 solar cell structure: a numerical study	5
Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer	5
Modeling and optimal design of silicon superjunctions considering charge imbalance	5
Simulation study of a novel GaN on Si quasi-vertical reverse-conducting insulated gate bipolar transistor	5
Investigation on the ESD characteristics of LVTSCR with embedded PNP on the anode side	5
Micro-textured In ₂ O ₃ /IGZO heterostructure thin-film transistors with enhanced field-effect mob	5
Atmospheric neutron-induced single event burnout characterization of 4.5 kV Si IGBTs with spallation neutron irradiation	5
Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high I on/I off<	5
Non-ideal program-time conservation in charge trap flash for deep learning	5
Through-silicon-via induced stress-aware FinFET buffer sizing in 3D ICs	4
The effect of series stacking on fast interruption for drift step recovery diode	4
Dielectric engineering for improvement of mobility and photoelectric performance in 2D BiI3	4
Effect of traps on carrier transport in CdSe quantum dot thin films	4
Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN	4
Anisotropic structural and optical properties of semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates	4
Investigation of degradation dynamics of 265 nm LEDs assisted by EL measurements and numerical simulations	4
Rapid hydrogen annealing for enhanced device performance and reduced thermal budget	4
Phosphorus vacancy as a dominant donor in n-InP single crystals grown by VGF method	4
Low thermal boundary resistance and reduced junction temperature in GaN HEMTs via AlN-mediated top-side diamond integration	4
Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications	4
Over 1.2 GW cm−2 β-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing	4
Influence of power ramps on the physical properties of AZO thin films deposited at room temperature by RF magnetron sputtering technique	4
C-band InAs/InP quantum dots: alternative growth versus indium-flush for self-assembled growth	4
The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films	4
Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors	4
Development of magnetically driven contactless piezoelectric nanogenerators utilizing ZnO nanowires with different shaped top electrodes	4
Annealing temperature dependent properties for Ni/Ti/W Ohmic contacts simultaneously formed on n- and p-type 4H-SiC	4
Ferroelectric-gate tunnel field-effect transistor one-transistor ternary contents addressable memory	4
Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunneling diodes	4
Numerical investigation of split-decoupled gate design for threshold voltage stabilization in p-GaN HEMT	4
A junctionless dual-gate MOSFET-based programmable inverter for secured hardware applications using nitride charge trapping	4
Numerical optimization of hybrid 2D/3D and tandem perovskite/silicon HTJ solar cells, based on an experimentally validated MAPbI 3 cell: influence of	4
Impact of ion implantation and laser processing parameters on carrier lifetimes in gold-hyperdoped silicon	4
Cellular breakdown and carrier lifetimes in gold-hyperdoped silicon	4
A SiC sidewall enhanced trench JBS diode with improved forward performance	4
Band alignment of heterojunctions formed by different polar GaN and two of two-dimensional materials: h-BN and MoSe 2	4
Room temperature interband cascade lasers near 7.7 µm and dependence on structural quality	4
A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect	4
Efficiency enhancement of triple absorber layer perovskite solar cells with the best materials for electron and hole transport layers: numerical study	4
The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs	4
Modified photodiode equivalent circuit model considering coplanar waveguide electrodes	4
Electron beam irradiation effects on GaN/InGaN multiple quantum well structures	4
Quantification of losses in bent waveguides within DBR-RW laser diodes emitting at 785 nm	4
Infrared extinction in heavily doped CdTe:Cr single crystals at room temperature	4
Multi-stage infrared detectors	4
Strain engineering and strain measurement by spring tethers on suspended epitaxial GaN-on-Si photonic crystal devices	4
Enhanced photocatalytic degradation of methylene blue using DEA-modified TiO2 thin films	4
TCAD analysis of SiC trench MOSFET structures with improved frequency figure of merit	4
The photoelectric and defect properties in B-sites doped α -CsPbI 3 by first-principles	4
Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO2/HfO2 stacked dielectric	4
A 4H-SiC super-junction trench MOS barrier Schottky structure with an enhanced figure of merit	4
Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A	4