Semiconductor Science and Technology

Papers
(The TQCC of Semiconductor Science and Technology is 5. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-04-01 to 2025-04-01.)
ArticleCitations
Lasing emission from hybrid silver nanowires and zinc oxide61
Materials for 1550nm-pumped THz photoconductive emitters58
A high rectification efficiency Dual Fin Si0.7Ge0.3/Si/Si0.7Ge0.3 quantum well channel structure FinFET for 2.45 GHz micropower microwave wireless energy ha57
First-principles study on the physical properties of Al-based wide-bandgap perovskites Cs3AlIxBr6-x for optoelectronic applications44
Tunnel hole injection in unipolar HgCdTe-based laser diode42
Monte Carlo evaluation of GaN THz Gunn diodes33
Research on hybrid processing of silicon carbide based on laser cutting30
Comparative analysis of Y2O3 and Al2O3 interfacial layers in modulating the electrical properties of ZrO2 and HfO2 on Ge29
Impact of mercury vacancy states on Shockley–Read–Hall recombination in narrow gap HgCdTe29
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor29
Understanding the trap-induced frequency dispersion in the C–V curve of AlGaN/GaN hetero-structure28
Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography28
Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics27
Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application27
Study on the fundamental factors of the property evolution of a 300 mm polycrystalline trap-rich layer26
MISHEMT intrinsic voltage gain under multiple channel output characteristics25
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer25
Effect of silver doping on electrical characteristics of aluminum/HfO2/p-silicon metal-oxide-semiconductor devices23
Optimizing CuInSe2 solar cells with kesterite-based upper absorber and back surface field layers for enhanced efficiency: a numerical study23
Transient analysis of graphene-based on-chip interconnects using closed-form MRA model22
Demonstration of a lateral p-NiO/n-GaN JFET fabricated by selective-area regrowth22
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance22
Process optimization of 4H-SiC chemical mechanical polishing based on grey relational analysis22
A study on the high mobility and improved reliability of pr-doped indium zinc oxide thin film transistors21
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate21
Design and simulation of high-speed and low-power memcapacitor-based nonvolatile static cells using FinFET transistors21
Design of behavior prediction model of molybdenum disulfide magnetic tunnel junctions using deep networks20
Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method20
Terahertz emission mechanisms in low-temperature-grown and semi-insulating gallium arsenide photoconductive antenna devices excited at above- and below-bandgap photon energies19
Interface control and electron transport in ALD ZnO/Al2O3 TFTs studied by gated Hall effect19
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems19
The adsorption performance of harmful gas (CO, SO) on doped graphene: a first-principle study18
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors18
Impact of NaOH solution surface treatment on Al2O3/β-Ga2O3 MOS capacitors18
Electronic signal for mechanical failure in two-dimensional g-SiC17
Nonvolatile bipolar resistive switching characteristics of aluminum oxide grown by thermal oxidation processes16
Effects of spacer layer thickness in InAlN/GaN double-channel HEMTs16
Tailored efficient and reliable double luminescent layer hybrid WOLEDs via doping engineering16
Si-implantation for low ohmic contact resistances in RF GaN HEMTs15
Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes15
Optimization of specific on-resistance of a two-zone variational vertical doping superjunction with insulating layers15
The ab initio study of n-type nitrogen and gallium co-doped diamond15
Study on a p-GaN HEMT with composite passivation and composite barrier layers15
Enhancement of all-inorganic perovskite solar cell performance through the addition of CuI as a hole transport layer additive15
Effect of rapid thermal annealing on DC performance of Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET15
A novel MTCMOS based 8T2M NVSRAM design for low power applications with high temperature endurance15
Inter-valley phonon scattering limited performance of n-channel WS2 monolayer transistors14
Display-pixel performances driven by contact-limited switching transistors14
Effect of MoS2 layers on the performance of FET-based biosensors: a comprehensive study14
Bidirectional threshold switching in Pt/Ag:Ni(OH)2/Pt structure13
A radiation-hardened hybrid RRAM-based non-volatile latch13
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design13
Effect of the thermal stress on the defect evolution at GaAs/Si wafer bonding with a-Ge intermediate layer13
Energy spectrum of bilayer graphene with magnetic quantum structures studied using the Dirac equation13
Performance analysis and yield estimation for a negative capacitance field effect transistor-based eight-transistor static random access memory12
A low loss single-channel SiC trench MOSFET with integrated trench MOS barrier Schottky diode12
Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension12
Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters12
Si tunnel junctions obtained by proximity rapid thermal diffusion for tandem photovoltaic cells12
I–V Characteristics of E-mode GaN-based transistors under gate floating12
Modeling dislocation-related reverse bias leakage in GaN p–n diodes11
A three-bit-per-cell via-type resistive random access memory gated metal-oxide semiconductor field-effect transistor non-volatile memory with the FORMing-free characteristic11
Role of Fermi-level depinning in quenching of V4+ related photoluminescence in semi-insulating 4H-SiC11
Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability11
Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity11
Investigation into water-induced surface oxidization of GaN lamella structure11
High-power cold diodes for the protection of a 1.5 T superconducting MRI magnet system10
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing10
Simple and direct estimation method for split-off hole effective mass from Franz–Keldysh oscillations appearing in photoreflectance spectra: a feasibility study using GaAs epitaxial layer structures a10
Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin-filtering effects and high tunnel magnetoresistance via energy band difference10
High mobility Ge 2DHG based MODFETs for low-temperature applications10
Growth modification via indium surfactant for InGaN/GaN green LED10
Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method10
Investigation of degradation mechanism after negative bias temperature stress in Si/SiGe channel metal–oxide–semiconductor capacitors induced by hydrogen diffusion10
GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation10
Understanding electron transport in halogenated graphene nanoribbons and possible application as interconnects10
Germanium thin film manufacturing using covalent bonding process10
Analytical I–V and C–V models for symmetric double-gate AOSTFTs10
Electroforming free enhanced resistive switching in reduced graphene oxide films embedded with silver nanoparticles for nonvolatile memory applications10
Design and implementation of an inverter and its application in ring oscillator circuits using an organic-thin-film-transistor based on an FTM-derived channel10
Integration of Si0.7Ge0.3 fin onto a bulk-Si substrate and its P-type FinFET device fabrication10
Boost of orthorhombic population with amorphous SiO2 interfacial layer—a DFT study10
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements9
Emission and capture characteristics of electron trap (E emi = 0.8 eV) in Si-doped β-Ga2O3 epilayer9
Effect of dielectric surface passivation on organic field-effect transistors: spectral analysis of the density of trap-states9
Improved crystallinity and surface morphology of a-plane AlN grown on high temperature annealed AlN/sapphire template by pulsed-flow mode metal-organic vapor phase epitaxy9
Vertical gate cavity bulk-planar junctionless FET-based biosensor for label-free detection of biomolecules9
Single silicon synaptic device for stochastic binary spike-timing-dependent plasticity9
The surface tension of Ga2O3 melt measured by a drop-weight method in an optical floating-zone furnace9
Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL9
Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor9
Influence of substrate biasing on structural, chemical and electrical properties of Al2O3 thin films deposited by PEALD9
Interface tomography of GaInAs/AlInAs quantum cascade laser active regions9
A study on GaN-based betavoltaic batteries8
An analytical model for electron tunneling in triangular quantum wells8
Proton irradiation influence on gate-channel low-field carrier mobility of AlGaN/GaN HEMTs8
Computing in-memory reconfigurable (accurate/approximate) adder design with negative capacitance FET 6T-SRAM for energy efficient AI edge devices8
Threshold voltage shift induced by intrinsic stress in gate metal of AlGaN/GaN HFET8
Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates8
An ultra-high-frequency memristor circuit model8
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity8
Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes8
Phosphorus implantation into 4H-SiC at room and elevated temperature8
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET8
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 35 125018
The effects of AlGaN quantum barriers on carrier flow in deep ultraviolet nanowire laser diode8
Effect of Ag source layer thickness on the switching mechanism of TiN/Ag/SiN x /TiN conductive bridging random access memory observed at sub-µA current8
CMOS compatible manufacturing of a hybrid SET-FET circuit8
Ridge waveguide lasers with vertically stacked quantum wells and tunnel junctions8
Surface defects in 4H-SiC: properties, characterizations and passivation schemes8
Terahertz monolithic integrated narrow-band filter based on the silicon carbide substrate8
Printed in-plane electrolyte-gated transistor based on zinc oxide8
A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD simulation study8
Formation of a lateral p–n junction light-emitting diode on an n-type high-mobility GaAs/Al0.33Ga0.67As heterostructure8
An all-optical equalizer SWAP gate (ESG)7
Pretreatment strategies of precursors for efficient photocatalytic hydrogen production of graphitic phase carbon nitride7
Wave processes in silicon samples with nickel impurities arising at pulsed hydrostatic pressure7
Low-temperature in situ deposited CuI-based hole-transporter for perovskite solar cells efficiency enhancement7
Effect of conducting filament radius on local temperature and activation power of ON-state ReRAM device7
Comparative study of III-phosphide- and III-nitride-based light-emitting diodes: understanding the factors limiting efficiency7
Low-frequency noise characterization of AlGaN/GaN HEMTs with and without a p-GaN gate layer7
Electrical and mechanical properties of Au–Si bonds for 3D interconnect applications7
Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects7
Quantitative characterization of self-heating effects in GaN-on-diamond HEMTs with 3C-SiC interfacial layer7
An enhanced high frequency performance SiC MOSFET with self-adjusting P-shield region potential7
All-HKMG-bounded SCR for advanced ESD protection in 14 nm FinFET technology7
Dynamic resistive switching devices for neuromorphic computing7
Fabrication of sheet-like ZnO/ZnS heterostructures with enhanced H2S sensing performance at low operation temperatures7
Influence of swift heavy ion irradiation on electrical characteristics of β-Ga2O3 Schottky barrier diode7
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications7
A 9 T SRAM cell with data-independent read bitline leakage and improved read sensing margin for low power applications7
Electrical transport properties of highly doped N-type GaN materials7
Acetone discriminator and concentration estimator for diabetes monitoring in human breath7
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD7
Investigating the energetic disorders and charge-carrier mobilities of active layers via simulating the performances of organic solar cells7
Design, optimization, and analysis of Si and GaN nanowire FETs for 3 nm technology7
The improvement of endurance characteristics in a superlattice-like material-based phase change device7
A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same7
Reconfigurable nonvolatile Boolean logic with one-transistor-two-memristor for in-memory computing7
Tunable Schottky barrier in a graphene/AlP van der Waals heterostructure7
GaAs nanocone array-based hybrid solar cells with excellent light-trapping capabilities and enhanced photogeneration rate7
Low energy non-volatile look-up table using 2 bit ReRAM for field programmable gate array7
Structural and optical properties of n-type and p-type GaAs(1−x)Bi x thin films grown by molecular beam epitaxy on (311)B GaAs substrates7
Device operation and physical mechanism of asymmetric junctionless tunnel field-effect transistors designed to suppress coupled short-channel/short-drain effects and promote on-current switching for u7
Trap-assisted tunneling current and quantum efficiency loss in InGaAsSb short wavelength infrared photo detectors7
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach7
Study of traps in low-temperature polysilicon thin film transistors using a current transient method7
Experimental measurement of ungated channel region conductance in a multi-terminal, metal oxide-based ECRAM7
Resonant states and their role in nanophotonics7
Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation7
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices7
Impurity level properties in transition metal doped α-Ga2O3 for optoelectronic applications7
Opto-electronic, thermodynamic and charge carriers transport properties of Ta2FeNiSn2 and Nb2FeNiSn2 double half-Heusler alloys7
Performance improvement in NiO x -based GaN MOS-HEMTs7
Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation6
Research on hybrid processing of silicon carbide based on laser cutting6
Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer6
External electric field and UV-ozone treated Ti3C2T x -MXene nanosheets and their hole injection tailoring in UV organic light-emittin6
A computational analysis to enhance performance of CIGS solar cells using back surface field and ZnSe buffer layer approach6
Simulation study of a novel GaN on Si quasi-vertical reverse-conducting insulated gate bipolar transistor6
Electrostatic discharge failure and protection of single-walled carbon nanotube field-effect transistors6
Enhancing external quantum efficiency of deep ultraviolet micro-leds through geometry design and multi-physics field coupling analysis6
Recent progress in red light-emitting diodes by III-nitride materials6
Simultaneous enhancements on emissions from quantum dot and quantum well by Ag nanoparticles for color conversion6
The superiority of the photocatalytic and antibacterial performance of mechanochemically synthesized CdS nanoparticles over solvothermal-prepared ones6
Vertically aligned 2D tin sulfide (SnS) nanoplates for selective detection of ethanol gas at room temperature6
Novel (CH3NH3)3Bi2I9 perovskite solar cells processed by in-situ gas-solid reaction6
Silicon nanowire-based ammonia gas sensor with enhanced response at elevated humidity levels6
Carbon aggregation effects on electronic properties of Ge: a first-principles study6
p-(001)NiO/n-(0001)ZnO Heterojunction based Ultraviolet Photodetectors with Controllable Response Time6
Improved electrical properties of AlGaN/GaN MIS-HEMTs with thermal and plasma-enhanced ALD Al2O3 gate dielectric6
Multifaceted impacts of reliability issues: trap dynamics, positive bias temperature instability, and effect of temperature on the HSSP-nTFET6
Micro-transfer printing of InGaAs/InP avalanche photodiode on Si substrate6
Au/Ni/Au as a contact for p-type GaAs6
MoS2 photonic synaptic device development for non-invasive detection of Parkinson’s disease6
Enhancing light trapping for improved efficiency of perovskite solar cells: design and analysis6
Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout6
Silica as a two-dimensional material for nano-electronics6
Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions6
Hydrothermal synthesis and solar cell application studies of nickel doped zinc oxide nanocomposites6
Impact of mercury vacancy states on Shockley–Read–Hall recombination in narrow gap HgCdTe6
Measuring valence band offsets in ReSe2/(0001)GaN, ReSe2/(11-22)GaN, and ReSe2/(11-20)GaN heterostructures6
Optical properties of mist CVD grown κ-Ga2O36
Zinc oxide-based sensor prepared by modified sol–gel route for detection of low concentrations of ethanol, methanol, acetone, and formaldehyde6
Performance of Cu-doped V2O5 thin film as a hole transport layer in perovskite-based solar cells6
Influence of radio-frequency magnetron sputtering power on electrical characteristics and positive bias stress stability of indium tin zinc oxide thin-film transistors6
The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET6
Triple-junction Dion–Jacobson perovskite tandem solar cells: advancing efficiency via interface optimization and broadened light absorption spectrum6
Rare earth oxide Y2O3 modified g-C3N4 for efficient photocatalytic hydrogen production: photocatalytic performance and electron transfer channels6
Influence of the AlN-sapphire template on the optical polarization and efficiency of AlGaN-based far-UVC micro LED arrays6
Modeling and efficiency enhancement of InGaP/GaAs dual-hetero junction solar cells using AlGaAs and AlGaInP emitters6
Simulation and modeling of a new CsSnI3 solar cell structure: a numerical study6
Dawn of nitride ferroelectric semiconductors: from materials to devices6
Dielectric modulated GaAs1− x Sb X FinFET as a label-free biosensor: device proposal6
Study of Ge-on-Si avalanche photodiodes for short-wave infrared applications6
Assessing the analog/RF and linearity performances of FinFET using high threshold voltage techniques5
Significant k-point selection scheme for computationally efficient band structure based UTB device simulations5
Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials5
RETRACTED: Potential application of AlP nanosheet semiconductor in the detection of toxic phosgene, thiophosgene, and formaldehyde gases5
Extraction of the edge/areal components and path of the reverse gate leakage in a GaN HEMT from measurements5
Microscale patterning of semiconductor c-Si by selective laser-heating induced KOH etching5
Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting5
Study of digital/analog performance parameters of misaligned gate recessed double gate junctionless field-effect-transistor for circuit level application5
Electrical transport properties in Ge hyperdoped with Te5
Donor implanted back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems5
Study on low-temperature evaporation of Ag2O-based Ag electrode and electron injection layer and their application in OLEDs5
Leakage mechanism in Al x Ga1−x N/GaN heterostructures with AlN interlayer5
Characterization of charge sharing induced by high LET heavy ions using inverter chains in a commercial bulk FinFET process5
Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack5
The calculation for quantized valence subband structure of zinc-blende GaN heterojunction quantum well based on k·p method5
Impact of 1 MeV proton irradiation on InGaAsN solar cells5
A novel 3300 V trench IGBT with P-N-doped polysilicon split gate for low EMI noise5
Effect of stress on thermal properties of AlGaN nanofilms5
Investigation of Si-based thermoelectrochemical cells (TECs) towards semiconductor fabrication and processing5
Effect of GaN-on-diamond integration technology on its thermal properties5
Classification of different post-hyperdoping treatments for enhanced crystallinity of IR-sensitive femtosecond-laser processed silicon5
Large-area regular periodic surface structures on 4H-SiC induced by defocused femtosecond laser5
Photoconductivity spectroscopy of arsenic-related acceptors in HgCdTe5
Drop-dry deposition of Co3O4 and fabrication of heterojunction solar cells with electrochemically deposited ZnO5
Characteristics of 22 nm UTBB-FDSOI technology with an ultra-wide temperature range5
Schottky barrier engineering in metal/semiconductor structures for high thermal stability5
High-efficiency MA1−z FA z Pbl3−x Cl x perovskite solar cel5
Critical layer thickness of wurtzite heterostructures with arbitrary pairs of growth planes and slip systems5
Design of PAMBE-based selective-area growth compliant ultra-low leakage GaN mixed-conduction vertical diodes for high-power applications *5
Preparation and operating characteristics analysis of high-speed iron phthalocyanine organic phototriode5
Influence of paper surface characteristics on fully inkjet printed PEDOT:PSS-based electrochemical transistors5
LCINDEP: a novel technique for leakage reduction in FinFET based circuits5
Abnormal trend in hot carrier degradation with fin profile in short channel FinFET devices at 14 nm node5
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs5
Limiting factors of GaN-on-GaN LED5
Electrical-stress driven oxidation in 940 nm oxide-confined VCSEL5
A novel photodiode array structure with double-layer SiO2 isolation5
Gas sensing performances of commercial carbon fibers functionalized by NiO/SnO2 composite5
Power spectral density-based fractal analyses of sputtered yttria-stabilized zirconia thin films5
Dielectric modulated CNT TFET based label-free biosensor: design and performance analysis5
Comparative performance analysis and material exploration of ECO-friendly highly efficient perovskite solar cells5
Insights into unconventional behaviour of negative capacitance transistor through a physics-based analytical model5
Influence of anti-reflection coatings on double GaAs/Si heterojunction layers in Si solar cells5
Improvement of thermal resistance in InGaAs/GaAs/AlGaAs microdisk lasers bonded onto silicon5
High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors5
Strain engineering in optoelectronic properties of MoSi2N4 monolayer: ultrahigh tunability5
Improving the photovoltaic properties of GaAs/GaAsBi pin diodes by inserting a compositionally graded layer at the hetero-interface5
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