Semiconductor Science and Technology

(The TQCC of Semiconductor Science and Technology is 5. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-07-01 to 2024-07-01.)
GaN FinFETs and trigate devices for power and RF applications: review and perspective67
A MoSSe/blue phosphorene vdw heterostructure with energy conversion efficiency of 19.9% for photocatalytic water splitting60
Next generation electronics on the ultrawide-bandgap aluminum nitride platform49
Recent progress in red light-emitting diodes by III-nitride materials49
Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modification48
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition40
Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies38
Review on performance analysis of P3HT:PCBM-based bulk heterojunction organic solar cells38
Porous semiconductor compounds35
High-detectivity ultraviolet-B photodetector based on SnO2 thin film/Si heterojunction33
InP membrane integrated photonics research32
Two-step write–verify scheme and impact of the read noise in multilevel RRAM-based inference engine30
60-GHz third-order on-chip bandpass filter using GaAs pHEMT technology30
Remarkably improved Curie temperature for two-dimensional CrI3 by gas molecular adsorption: a DFT study28
Ferroelectric HfO2-based synaptic devices: recent trends and prospects26
A 32 nm single-ended single-port 7T static random access memory for low power utilization25
Dawn of nitride ferroelectric semiconductors: from materials to devices25
Comparative performance analysis of mixed halide perovskite solar cells with different transport layers and back metal contacts24
Exploring the exemplary structural, electronic, optical, and elastic nature of inorganic ternary cubic XBaF3 (X = Al and Tl) employing the accurate TB-mBJ approach23
Assessing the analog/RF and linearity performances of FinFET using high threshold voltage techniques23
Kinetic Monte Carlo analysis of data retention in Al:HfO2-based resistive random access memories23
Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage23
Impact of heterogeneous gate dielectric on DC, RF and circuit-level performance of source-pocket engineered Ge/Si heterojunction vertical TFET23
Thermal boundary resistance of direct van der Waals bonded GaN-on-diamond23
Helical liquids in semiconductors22
Electronic structure, magnetic and optic properties of spinel compound NiFe2O4 19
Dielectric modulated GaAs1− x Sb X FinFET as a label-free biosensor: device proposal19
Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices19
Modeling and analyzing temperature-dependent parameters of Ni/β-Ga2O3 Schottky barrier diode deposited by confined magnetic field-based sputtering19
Investigations on epitaxy and lattice distortion of sputter deposited β-Ga2O3 layers on GaN templates18
Synaptic behaviour of TiO x /HfO2 RRAM enhanced by inserting ultrathin Al2O3 layer for neuromorphic computing18
Computational investigation on the photovoltaic performance of an efficient GeSe-based dual-heterojunction thin film solar cell18
Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors18
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance *18
Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layers17
Cu2ZnSnS4 thin film as a counter electrode in zinc stannate-based dye-sensitized solar cells17
High-speed micro-LEDs for visible light communication: challenges and progresses17
Theoretical and experimental investigations of barrier height inhomogeneities in poly-Si/4H-SiC heterojunction diodes17
Current–voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector17
Applications of AlGaN/GaN high electron mobility transistor-based sensors in water quality monitoring17
High-performance solution-processed ZnSnO metal–semiconductor–metal ultraviolet photodetectors via ultraviolet/ozone photo-annealing16
Resonant states and their role in nanophotonics16
S-scheme heterojunction ZnO/g-C3N4 shielding polyester fiber composites for the degradation of MB16
Growth of α- and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD16
Impurity level properties in transition metal doped α-Ga2O3 for optoelectronic applications16
Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET16
Strain engineering in optoelectronic properties of MoSi2N4 monolayer: ultrahigh tunability16
Opto-electronic, thermodynamic and charge carriers transport properties of Ta2FeNiSn2 and Nb2FeNiSn2 double half-Heusler alloys16
Performance enhancement of β-Ga2O3 on Si (100) based Schottky barrier diodes using REduced SURface Field15
A novel circular double-gate SOI MOSFET with raised source/drain15
The effects of AlGaN quantum barriers on carrier flow in deep ultraviolet nanowire laser diode15
Development of EGFET-based ITO pH sensors using epoxy free membrane15
Optimization of post-deposition annealing temperature for improved signal-to-noise ratio in In2O3 gas sensor15
Computationally efficient compact model for ferroelectric field-effect transistors to simulate the online training of neural networks15
Enhanced on-state current and suppressed ambipolarity in germanium-source dual vertical-channel TFET15
Zero-biased solar-blind photodetectors based on AlN/β-Ga2O3 heterojunctions15
Effect of gate length on performance of 5nm node N-channel nano-sheet transistors for analog circuits15
Material gain of InGaAs/GaAs quantum well-dots14
Study of analog performance of common source amplifier using rectangular core–shell based double gate junctionless transistor14
A novel source material engineered double gate tunnel field effect transistor for radio frequency integrated circuit applications14
Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition14
Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si(100) substrate by ion-cutting technique14
Comparative investigation into effects of the interplay between absorber layer crystallinity and interfacial defect states on the performance of lead-based and tin-based perovskite solar cells14
Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel14
Asymmetric-waveguide, short cavity designs with a bulk active layer for high pulsed power eye-safe spectral range laser diodes14
GaN HEMT based biosensor for the detection of breast cancer marker (C-erbB2)14
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET14
Manipulating electronic dynamics of 8-Pmmn borophene with surface optical phonons13
Dynamic resistive switching devices for neuromorphic computing13
Investigation of electrical performance and operation stability of RF-sputtered InSnZnO thin film transistors by oxygen-ambient rapid thermal annealing13
Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors13
Electrical performance of InAs/GaAs0.1Sb0.9 heterostructure junctionless TFET with dual-material gate and Gaussian-doped source13
Enhancement-mode normally-off β-Ga2O3:Si metal-semiconductor field-effect deep-ultraviolet phototransistor13
Influence of paper surface characteristics on fully inkjet printed PEDOT:PSS-based electrochemical transistors13
Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing12
Amorphous gallium oxide (a-Ga2O3)-based high-temperature bendable solar-blind ultraviolet photodetector12
Heavy ion induced single-event-transient effects in nanoscale ferroelectric vertical tunneling transistors by TCAD simulation12
Design and analysis of high electron mobility transistor inspired: III-V electro-optic modulator topologies12
A review of quantum transport in field-effect transistors12
Enhancing the performance of photodetectors based on ZnO nanorods decorated with Ag nanoparticles12
Organic photodiodes for near-infrared light detection12
GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy12
808 nm broad-area laser diodes designed for high efficiency at high-temperature operation12
Investigation of air-stable Cs2SnI6 films prepared by the modified two-step process for lead-free perovskite solar cells12
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices12
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design12
Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity11
Hyperdoped silicon materials: from basic materials properties to sub-bandgap infrared photodetectors11
Design and performance analysis of gate-all-around negative capacitance dopingless nanowire tunnel field effect transistor11
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance11
Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors11
Electrical performances degradations and physics based mechanisms under negative bias temperature instability stress for p-GaN gate high electron mobility transistors11
A novel 4H-SiC MOSFET for low switching loss and high-reliability applications11
Non-enzymatic lactate detection by an extended-gate type organic field effect transistor11
Broadband plasmonic absorption enhancement of perovskite solar cells with embedded Au@SiO2@graphene core–shell nanoparticles11
III-nitride blue light-emitting diodes utilizing hybrid tunnel junction with low excess voltage11
Optical responses of lead halide perovskite semiconductors11
Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier10
Coexistence of volatile and non-volatile resistive switching in Ni/SiO2/Pt memristor device controlled from different current compliances10
Stress control in thick AlN/c-Al2O3 templates grown by plasma-assisted molecular beam epitaxy10
Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs10
Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient spectroscopy10
Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction10
Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)10
The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems10
Carrier concentration variety over multisectoral boron-doped HPHT diamond10
Understanding interface properties in 2D heterostructure FETs10
Efficiency enhancement of triple absorber layer perovskite solar cells with the best materials for electron and hole transport layers: numerical study10
Investigation on thermal stability of Si0.7Ge0.3/Si stacked multilayer for gate-all-around MOSFETS10
Experimental investigation on the performance degradations of the GaN class-F power amplifier under humidity conditions10
Charge-neutral nonlocal response in superconductor-InAs nanowire hybrid devices10
Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors10
Enhanced switching ratio of sol–gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures10
Empirical metal-oxide RRAM device endurance and retention model for deep learning simulations10
Impact of terbium inclusion on the photodetection performance of ZnO thin films10
Electroforming-free flexible organic resistive random access memory based on a nanocomposite of poly(3-hexylthiophene-2,5-diyl) and orange dye with a low threshold voltage10
Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs9
Polarization doping modulated heterojunction electron gas in AlGaN/GaN CAVETs9
Effect of dielectric surface passivation on organic field-effect transistors: spectral analysis of the density of trap-states9
Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices9
A low loss single-channel SiC trench MOSFET with integrated trench MOS barrier Schottky diode9
High-brightness broad-area diode lasers with enhanced self-aligned lateral structure9
Fabrication of a GaAs/GaNAsBi solar cell and its performance improvement by thermal annealing9
Low-temperature deposition of 2D SnS nanoflakes on PET substrates for flexible photodetectors with broadband response9
Development of a hybrid photodetector device between pyruvic acid (CH3COCOOH) and silicon9
Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition9
Electrical transport properties of highly doped N-type GaN materials9
Experimental measurement of ungated channel region conductance in a multi-terminal, metal oxide-based ECRAM9
Sn-bridge type-Ⅱ PCN/Sn/SnO heterojunction with enhanced photocatalytic activity9
Design of a triple pocket multi-gate material TFET structure for low-power applications9
Terahertz quantum-cascade lasers for high-resolution absorption spectroscopy of atoms and ions in plasmas9
Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation9
Improved negative bias stability of sol–gel processed Ti-doped SnO2 thin-film transistors9
Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation9
Very thin (111) NiO epitaxial films grown on c-sapphire substrates by pulsed laser deposition technique9
Mode competition in broad-ridge-waveguide lasers9
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD9
Approaching ultra-low turn-on voltage in GaN lateral diode9
A trench/planar SiC MOSFET integrated with SBD (TPSBD) for low reverse recovery charge and low switching loss9
Implementing variable doping and work function engineering in β-Ga2O3 MOSFET to realize high breakdown voltage and PfoM9
Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions9
Preparation and characterization of CZTS thin films by vacuum-assisted spray pyrolysis and fabrication of Cd-free heterojunction solar cells8
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data8
On the studies of capacitance–voltage and impedance spectroscopy of an Ni/(GO-Fe3O4)/n-Si heterojunction device over a wide temperature range8
Design and simulation of a high-performance CH3NH3Pb(I1–xClx)3-based perovskite solar cell using a CeOx electron transport layer and N8
GaN MSM structure UV photodetector detector based on nonplanar Si substrate and its performance optimization8
Optical and structural properties of AlN thin films deposited on different faces of sapphire substrates8
Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model8
Printed in-plane electrolyte-gated transistor based on zinc oxide8
Air-spacers as analog-performance booster for 5 nm-node N-channel nanosheet transistor8
Highly sensitive and selective sub ppb level acetone sensing platform based on Co3O4–ZnO heterojunction composites8
Facile synthesis of in situ CNT/WO3∙H2O nanoplate composites for adsorption and photocatalytic applications under visible light irradiation8
Experimental validation of solar panel integrated modified three-port active clamp flyback converter fed micro-inverter8
Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks8
Lamination method for improved polarization-leakage current relation in HfO2-based metal/ferroelectric/insulator/semiconductor structure8
Structural design and performance improvement of flip-chip AlGaInP mini light-emitting diodes8
Al0.6Ga0.4As x-ray avalanche photodiodes for spectroscopy8
Optical properties of mist CVD grown κ-Ga2O38
Low resistance n-contact for UVC LEDs by a two-step plasma etching process8
Analytical model for 2DEG charge density in β-(Al x Ga1−x )2O3/Ga2O3 HFET8
Non-linear thermal resistance model for the simulation of high power GaN-based devices8
Improved resistive switching characteristics of Ag/Al:HfO x /ITO/PET ReRAM for flexible electronics application8
Recent progress in III-nitride nanosheets: properties, materials and applications8
Performance improvement of ultrasonic spray deposited polymer solar cell through droplet boundary reduction assisted by acoustic substrate vibration8
High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers8
Tight-binding description for the electronic band structure of penta-graphene8
High-performance and stable perovskite photodetector with mixed 2D/3D perovskite surface passivation layer8
Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges8
Growth of GaN on monolayer hexagonal boron nitride by chemical vapor deposition for ultraviolet photodetectors8
Temperature-dependent Raman modes of MoS2/MoSe2 van der Waals heterostructures8
Evaluation of Cd1–x Zn x S as electron transport layer in superstrate and inverted configurations of Sb2Se3 8
The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT8
The effect of Se/(S+Se) compositional ratios on the performance of SnS-based solar cell: a numerical simulation8
Source material valuation of charge plasma based DG-TFET for RFIC applications8
Methanol solvent effect on photosensing performance of AZO thin films grown by nebulizer spray pyrolysis8
MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates8
Strain and stress effects on single crystal-supported titania and related nanostructures8
Impact of depolarization electric-field and charge trapping on the coercive voltage of an Si:HfO2-based ferroelectric capacitor7
Unconventional VTC of subthreshold inverter with MFMIS negative capacitance transistor: An analytical modelling framework with implications for ultralow power logic design7
Numerical simulations of a novel CH3NH3PbI3 based double-gate dopingless tunnel FET7
Flow modulation metalorganic vapor phase epitaxy of GaN at temperatures below 600 ºC7
Optimizing the flatness of 4H-silicon carbide wafers by tuning the sequence of lapping7
Investigation of etching selectivity and microstructure of Ag-doped Sb2Te thin film for dry lithography7
Effect of UV irradiation on the resistive switching characteristics of low-temperature solution-processed ZrO2 RRAM7
Controllable temporal spin splitter via δ-doping in parallel double δ-magnetic-barrier nanostructure7
An air-stable two-dimensional perovskite artificial synapse7
Study on memory characteristics of fin-shaped feedback field effect transistor7
Significant k-point selection scheme for computationally efficient band structure based UTB device simulations7
Memristive devices based on single ZnO nanowires—from material synthesis to neuromorphic functionalities7
High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors7
Comprehensive study of physical properties of cadmium telluride thin films: effect of post-deposition high annealing temperature7
An ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits7
The research of dual-mode film bulk acoustic resonator for enhancing temperature sensitivity7
Reliable analog resistive switching behaviors achieved using memristive devices in AlO x /HfO x bilayer structu7
Packaging and high-temperature characterization of a 650 V, 150 A eGaN HEMT7
Current–voltage characteristics of silicon based solar cells in the presence of cracks: MD simulations7
Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications7
Comprehensive analysis of optoelectronic performance of ultraviolet phototransistors based on AlGaN/GaN heterostructure7
Impact of the capture time on the series resistance of quantum-well diode lasers7
Simulation studies of lead-free Mn-based 2D perovskite solar cells7
3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth7
Correlation of native point defects and photocatalytic activity of annealed ZnO nanoparticle studied by electron spin resonance and photoluminescence emission7
Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack7
Investigation of device-circuit for negative capacitance vertical nanowire FETs based on SPICE model7
Investigation on high quality ultra-wide band gap β-Ga2O3/AlN heterostructure grown by metal organic chemical vapor deposition7
Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension7
Minority carrier lifetime in HgCdTe(100) epilayers and their potential application to background radiation limited MWIR photodiodes7
Internal optical loss and internal quantum efficiency of a high-power GaAs laser operating in the CW mode7
Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise7
Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures7
Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit7
A high sensitivity and selectivity n-butanol sensor based on monodispersed Pd-doped SnO2 nanoparticles mediated by glucose carbonization7
Room temperature terahertz detector based on single silicon nanowire junctionless transistor with high detectivity7
Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs7
Interface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-k HfAlO gate dielectrics by atom layer deposition7
A comparative study on GaSb epilayers grown on nominal and vicinal Si(100) substrates by molecular beam epitaxy7
A novel SiC power MOSFET with integrated polySi/SiC heterojunction freewheeling diode7
Improving the photovoltaic properties of GaAs/GaAsBi pin diodes by inserting a compositionally graded layer at the hetero-interface7
Effect of doping profile variation on nanoscale cylindrical gate carbon nanotube field-effect transistor: a computational study using nonequilibrium Green’s function formalism7
Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers7
CMOS charge qubits and qudits: entanglement entropy and mutual information as an optimization method to construct CNOT and SWAP Gates6
Normally-off AlGaN/GaN high electron mobility transistors on Si substrate with selective barrier regrowth in ohmic regions6
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures6
Improving the accuracy and robustness of RRAM-based in-memory computing against RRAM hardware noise and adversarial attacks6
The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results6
Effect of conducting filament radius on local temperature and activation power of ON-state ReRAM device6
Comparative study of III-phosphide- and III-nitride-based light-emitting diodes: understanding the factors limiting efficiency6
Multilevel memristive non-volatile look-up table using two transmission gates one memristor memory cells6
A dual-gate and Γ-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation6
A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures6
Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers6
Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors6
Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres6
Lattice vibrations and optical properties of α-Ga2O3films grown by halide vapor phase epitaxy6
Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes6
Charge trapping and recovery in ALD HfO2/β-Ga2O3 (010) MOS capacitors6
A three-bit-per-cell via-type resistive random access memory gated metal-oxide semiconductor field-effect transistor non-volatile memory with the FORMing-free characteristic6
Europium-doped g-C3N4: an efficient remover of textile dyes from water6
Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor6
Continuum level-set model for anisotropic wet etching of patterned sapphire substrates6
A single gate SiGe/Si tunnel FET with rectangular HfO2 dielectric pocket to improve I on/I amb current ratio6
A novel optimum variation lateral doping SiC lateral double-diffused metal oxide semiconductor with improved performance6
Dual-active-layer InGaZnO high-voltage thin-film transistors6
Insights into unconventional behaviour of negative capacitance transistor through a physics-based analytical model6
Characteristics of 22 nm UTBB-FDSOI technology with an ultra-wide temperature range6
Design, optimization, and analysis of Si and GaN nanowire FETs for 3 nm technology6
Monte Carlo evaluation of GaN THz Gunn diodes6
Rapid threshold switching dynamics of co-sputtered chalcogenide Ge15Te85 device for selector application6
Enhanced performance of InAs-based interband cascade lasers emitting between 10–13 µm6
Novel orthorhombic silicane nanosheet as a sensing material for acrolein and propanol—a first-principles investigation6