Semiconductor Science and Technology

Papers
(The TQCC of Semiconductor Science and Technology is 5. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)
ArticleCitations
GaN FinFETs and trigate devices for power and RF applications: review and perspective72
Next generation electronics on the ultrawide-bandgap aluminum nitride platform57
Recent progress in red light-emitting diodes by III-nitride materials51
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition45
Review on performance analysis of P3HT:PCBM-based bulk heterojunction organic solar cells43
High-detectivity ultraviolet-B photodetector based on SnO2 thin film/Si heterojunction39
Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies38
Dawn of nitride ferroelectric semiconductors: from materials to devices35
InP membrane integrated photonics research35
Exploring the exemplary structural, electronic, optical, and elastic nature of inorganic ternary cubic XBaF3 (X = Al and Tl) employing the accurate TB-mBJ approach31
60-GHz third-order on-chip bandpass filter using GaAs pHEMT technology30
Ferroelectric HfO2-based synaptic devices: recent trends and prospects30
Remarkably improved Curie temperature for two-dimensional CrI3 by gas molecular adsorption: a DFT study28
Helical liquids in semiconductors25
Comparative performance analysis of mixed halide perovskite solar cells with different transport layers and back metal contacts25
Computational investigation on the photovoltaic performance of an efficient GeSe-based dual-heterojunction thin film solar cell25
A 32 nm single-ended single-port 7T static random access memory for low power utilization25
Assessing the analog/RF and linearity performances of FinFET using high threshold voltage techniques23
Synaptic behaviour of TiO x /HfO2 RRAM enhanced by inserting ultrathin Al2O3 layer for neuromorphic computing22
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance *22
Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layers22
Dielectric modulated GaAs1− x Sb X FinFET as a label-free biosensor: device proposal20
Modeling and analyzing temperature-dependent parameters of Ni/β-Ga2O3 Schottky barrier diode deposited by confined magnetic field-based sputtering19
Current–voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector19
Strain engineering in optoelectronic properties of MoSi2N4 monolayer: ultrahigh tunability19
Enhanced on-state current and suppressed ambipolarity in germanium-source dual vertical-channel TFET18
Resonant states and their role in nanophotonics18
Impurity level properties in transition metal doped α-Ga2O3 for optoelectronic applications18
Opto-electronic, thermodynamic and charge carriers transport properties of Ta2FeNiSn2 and Nb2FeNiSn2 double half-Heusler alloys18
S-scheme heterojunction ZnO/g-C3N4 shielding polyester fiber composites for the degradation of MB17
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices17
Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors17
Cu2ZnSnS4 thin film as a counter electrode in zinc stannate-based dye-sensitized solar cells17
High-speed micro-LEDs for visible light communication: challenges and progresses17
The effects of AlGaN quantum barriers on carrier flow in deep ultraviolet nanowire laser diode17
Development of EGFET-based ITO pH sensors using epoxy free membrane16
Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET16
Material gain of InGaAs/GaAs quantum well-dots16
High-performance solution-processed ZnSnO metal–semiconductor–metal ultraviolet photodetectors via ultraviolet/ozone photo-annealing16
A review of quantum transport in field-effect transistors16
Effect of gate length on performance of 5nm node N-channel nano-sheet transistors for analog circuits15
Zero-biased solar-blind photodetectors based on AlN/β-Ga2O3 heterojunctions15
Hyperdoped silicon materials: from basic materials properties to sub-bandgap infrared photodetectors15
A novel circular double-gate SOI MOSFET with raised source/drain15
Optimization of post-deposition annealing temperature for improved signal-to-noise ratio in In2O3 gas sensor15
Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel14
Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation14
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET14
Enhancing the performance of photodetectors based on ZnO nanorods decorated with Ag nanoparticles14
Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity14
Enhancement-mode normally-off β-Ga2O3:Si metal-semiconductor field-effect deep-ultraviolet phototransistor14
GaN HEMT based biosensor for the detection of breast cancer marker (C-erbB2)14
Dynamic resistive switching devices for neuromorphic computing14
Manipulating electronic dynamics of 8-Pmmn borophene with surface optical phonons13
Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors13
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD13
Broadband plasmonic absorption enhancement of perovskite solar cells with embedded Au@SiO2@graphene core–shell nanoparticles13
Coexistence of volatile and non-volatile resistive switching in Ni/SiO2/Pt memristor device controlled from different current compliances13
GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy13
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design13
Design and performance analysis of gate-all-around negative capacitance dopingless nanowire tunnel field effect transistor13
Improvement of device characteristics of plasma-treated indium gallium zinc oxide thin-film transistors through thermal annealing13
Influence of paper surface characteristics on fully inkjet printed PEDOT:PSS-based electrochemical transistors13
Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier12
Amorphous gallium oxide (a-Ga2O3)-based high-temperature bendable solar-blind ultraviolet photodetector12
Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)12
808 nm broad-area laser diodes designed for high efficiency at high-temperature operation12
Electrical performances degradations and physics based mechanisms under negative bias temperature instability stress for p-GaN gate high electron mobility transistors11
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance11
Terahertz quantum-cascade lasers for high-resolution absorption spectroscopy of atoms and ions in plasmas11
Mode competition in broad-ridge-waveguide lasers11
Charge-neutral nonlocal response in superconductor-InAs nanowire hybrid devices11
Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient spectroscopy11
Electrical transport properties of highly doped N-type GaN materials11
Fabrication of a GaAs/GaNAsBi solar cell and its performance improvement by thermal annealing10
Empirical metal-oxide RRAM device endurance and retention model for deep learning simulations10
Efficiency enhancement of triple absorber layer perovskite solar cells with the best materials for electron and hole transport layers: numerical study10
The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems10
Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs10
Experimental investigation on the performance degradations of the GaN class-F power amplifier under humidity conditions10
Enhanced switching ratio of sol–gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures10
Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs10
Stress control in thick AlN/c-Al2O3 templates grown by plasma-assisted molecular beam epitaxy10
Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors10
Single-hole physics in GaAs/AlGaAs double quantum dot system with strong spin–orbit interaction10
Highly sensitive and selective sub ppb level acetone sensing platform based on Co3O4–ZnO heterojunction composites10
Implementing variable doping and work function engineering in β-Ga2O3 MOSFET to realize high breakdown voltage and PfoM10
Impact of terbium inclusion on the photodetection performance of ZnO thin films10
The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT10
Low-temperature internal quantum efficiency of GaInN/GaN quantum wells under steady-state conditions10
Experimental measurement of ungated channel region conductance in a multi-terminal, metal oxide-based ECRAM10
Approaching ultra-low turn-on voltage in GaN lateral diode9
MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates9
High-performance and stable perovskite photodetector with mixed 2D/3D perovskite surface passivation layer9
A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures9
Dual-active-layer InGaZnO high-voltage thin-film transistors9
Evaluation of Cd1–x Zn x S as electron transport layer in superstrate and inverted configurations of Sb2Se3 9
Effect of dielectric surface passivation on organic field-effect transistors: spectral analysis of the density of trap-states9
Design of a triple pocket multi-gate material TFET structure for low-power applications9
Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks9
Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs9
Development of a hybrid photodetector device between pyruvic acid (CH3COCOOH) and silicon9
GaN MSM structure UV photodetector detector based on nonplanar Si substrate and its performance optimization9
Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition9
A low loss single-channel SiC trench MOSFET with integrated trench MOS barrier Schottky diode9
Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model9
Reliable analog resistive switching behaviors achieved using memristive devices in AlO x /HfO x bilayer structu9
High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers9
Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation9
Design and simulation of a high-performance CH3NH3Pb(I1–xClx)3-based perovskite solar cell using a CeOx electron transport layer and N9
Optical properties of mist CVD grown κ-Ga2O39
Very thin (111) NiO epitaxial films grown on c-sapphire substrates by pulsed laser deposition technique9
Comprehensive study of physical properties of cadmium telluride thin films: effect of post-deposition high annealing temperature8
Printed in-plane electrolyte-gated transistor based on zinc oxide8
Analytical model for 2DEG charge density in β-(Al x Ga1−x )2O3/Ga2O3 HFET8
Minority carrier lifetime in HgCdTe(100) epilayers and their potential application to background radiation limited MWIR photodiodes8
Recent progress in III-nitride nanosheets: properties, materials and applications8
Investigation of etching selectivity and microstructure of Ag-doped Sb2Te thin film for dry lithography8
Preparation and characterization of CZTS thin films by vacuum-assisted spray pyrolysis and fabrication of Cd-free heterojunction solar cells8
Write-once-read-many-times characteristics of CuO layer with Ag conductive bridges8
Impact of depolarization electric-field and charge trapping on the coercive voltage of an Si:HfO2-based ferroelectric capacitor8
Non-linear thermal resistance model for the simulation of high power GaN-based devices8
Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures8
Improved resistive switching characteristics of Ag/Al:HfO x /ITO/PET ReRAM for flexible electronics application8
An ultrathin-barrier AlGaN/GaN heterostructure: a recess-free technology for the fabrication and integration of GaN-based power devices and power-driven circuits8
Facile synthesis of in situ CNT/WO3∙H2O nanoplate composites for adsorption and photocatalytic applications under visible light irradiation8
Lamination method for improved polarization-leakage current relation in HfO2-based metal/ferroelectric/insulator/semiconductor structure8
Simulation studies of lead-free Mn-based 2D perovskite solar cells8
Optical and structural properties of AlN thin films deposited on different faces of sapphire substrates8
Interface scattering dominated carrier transport in hysteresis-free amorphous InGaZnO thin film transistors with high-k HfAlO gate dielectrics by atom layer deposition8
Source material valuation of charge plasma based DG-TFET for RFIC applications8
Antidote-induced armchair graphene nanoribbon based resonant tunneling diodes8
Packaging and high-temperature characterization of a 650 V, 150 A eGaN HEMT8
Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit8
Structural design and performance improvement of flip-chip AlGaInP mini light-emitting diodes8
Controllable temporal spin splitter via δ-doping in parallel double δ-magnetic-barrier nanostructure7
Improving the photovoltaic properties of GaAs/GaAsBi pin diodes by inserting a compositionally graded layer at the hetero-interface7
A novel SiC power MOSFET with integrated polySi/SiC heterojunction freewheeling diode7
Vertical GaN power rectifiers: interface effects and switching performance7
Study on memory characteristics of fin-shaped feedback field effect transistor7
Insights into unconventional behaviour of negative capacitance transistor through a physics-based analytical model7
Air-spacers as analog-performance booster for 5 nm-node N-channel nanosheet transistor7
Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension7
Numerical simulations of a novel CH3NH3PbI3 based double-gate dopingless tunnel FET7
Review: III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy7
Variability analysis of the epitaxial layer TFET due to gate work function variation, random dopant fluctuation, and oxide thickness fluctuation using the statistical impedance field method7
Comprehensive analysis of optoelectronic performance of ultraviolet phototransistors based on AlGaN/GaN heterostructure7
A novel optimum variation lateral doping SiC lateral double-diffused metal oxide semiconductor with improved performance7
Analysis and mitigation of parasitic resistance effects for analog in-memory neural network acceleration7
A comparative study on GaSb epilayers grown on nominal and vicinal Si(100) substrates by molecular beam epitaxy7
Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack7
Memristive devices based on single ZnO nanowires—from material synthesis to neuromorphic functionalities7
High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors7
Simplified top-down fabrication of sub-micron silicon nanowires7
Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application7
Internal optical loss and internal quantum efficiency of a high-power GaAs laser operating in the CW mode7
The research of dual-mode film bulk acoustic resonator for enhancing temperature sensitivity7
Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise7
Current–voltage characteristics of silicon based solar cells in the presence of cracks: MD simulations7
Enhanced performance of InAs-based interband cascade lasers emitting between 10–13 µm7
Effect of UV irradiation on the resistive switching characteristics of low-temperature solution-processed ZrO2 RRAM7
A single gate SiGe/Si tunnel FET with rectangular HfO2 dielectric pocket to improve I on/I amb current ratio7
3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth7
Significant k-point selection scheme for computationally efficient band structure based UTB device simulations7
Effect of doping profile variation on nanoscale cylindrical gate carbon nanotube field-effect transistor: a computational study using nonequilibrium Green’s function formalism7
Effect of different layer structures on the RF performance of GaN HEMT devices7
Investigation on high quality ultra-wide band gap β-Ga2O3/AlN heterostructure grown by metal organic chemical vapor deposition7
Zinc-hyperdoped silicon photodetectors fabricated by femtosecond laser with sub-bandgap photoresponse7
An analytical model for electron tunneling in triangular quantum wells7
Unconventional VTC of subthreshold inverter with MFMIS negative capacitance transistor: An analytical modelling framework with implications for ultralow power logic design7
Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor7
Optimizing the flatness of 4H-silicon carbide wafers by tuning the sequence of lapping7
Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications7
Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers7
Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate7
Characteristics of 22 nm UTBB-FDSOI technology with an ultra-wide temperature range6
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor6
Comparative study of III-phosphide- and III-nitride-based light-emitting diodes: understanding the factors limiting efficiency6
Improved performance of Ni/GaN Schottky barrier impact ionization avalanche transit time diode with n-type GaN deep level defects6
Design, optimization, and analysis of Si and GaN nanowire FETs for 3 nm technology6
Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation6
Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200 mm diameter silicon substrates using metal-organic chemical vapor deposition6
Effects of sequential annealing in low oxygen partial-pressure and NO on 4H-SiC MOS devices6
Facile fabrication and enhanced photoresponse of CuO/β-Ga2O3 nanostructure photodetector6
A dual-gate and Γ-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation6
Investigation of 4,4′-bis[(N- carbazole) styryl] biphenyl (BSB4) for a pure blue fluorescent OLED with enhanced efficiency nearing the theoretical limit6
High-responsivity silicon p–i–n mesa-photodiode6
Transverse photonic crystal semiconductor laser arrays6
Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis6
Effect of conducting filament radius on local temperature and activation power of ON-state ReRAM device6
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures6
A three-bit-per-cell via-type resistive random access memory gated metal-oxide semiconductor field-effect transistor non-volatile memory with the FORMing-free characteristic6
Investigating the exciton formation zone and its roles in phosphorescent organic light emitting diodes6
Monte Carlo evaluation of GaN THz Gunn diodes6
Electron radiation impact on the kink effect in S 22 of InP-based high electron mobility transistors6
Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001)6
Principles and impacts of dynamic threshold voltage in a p-GaN gate high-electron-mobility transistor6
Continuum level-set model for anisotropic wet etching of patterned sapphire substrates6
CMOS charge qubits and qudits: entanglement entropy and mutual information as an optimization method to construct CNOT and SWAP Gates6
Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors6
Improving the accuracy and robustness of RRAM-based in-memory computing against RRAM hardware noise and adversarial attacks6
The dependence of the emission from MQWs on the indium content in the underlying InGaN templates: experimental and modeling results6
Charge trapping and recovery in ALD HfO2/β-Ga2O3 (010) MOS capacitors6
Influence of swift heavy ion irradiation on electrical characteristics of β-Ga2O3 Schottky barrier diode6
A comparative study of ZrS2-based thin film solar cells using the SCAPS solar cell capacitance simulator6
Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes6
Two-dimensional hole gases in SiGeSn alloys6
Rapid threshold switching dynamics of co-sputtered chalcogenide Ge15Te85 device for selector application6
Direct synthesis of submillimeter-sized few-layer WS2 and WS0.3Se1.7 by mist chemical vapor deposition and its application to complementary MOS inverter6
α-Fe2O3/ZnO heterostructure for enhanced photocatalytic and antibacterial activity6
A 16 nm FinFET circuit with triple function as digital multiplexer, active-high and active-low output decoder for high-performance SRAM architecture6
Novel orthorhombic silicane nanosheet as a sensing material for acrolein and propanol—a first-principles investigation6
Normally-off AlGaN/GaN high electron mobility transistors on Si substrate with selective barrier regrowth in ohmic regions6
Power spectral density-based fractal analyses of sputtered yttria-stabilized zirconia thin films6
Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor5
Low energy non-volatile look-up table using 2 bit ReRAM for field programmable gate array5
Laplace DLTS studies of the 0.25 eV electron trap properties in n-GaN5
Electroforming free enhanced resistive switching in reduced graphene oxide films embedded with silver nanoparticles for nonvolatile memory applications5
Characterization of ZnO/AlO x /benzene thin-film heterostructures grown through atomic layer deposition/molecular layer deposition5
Slot-die processed perovskite solar cells: effects of solvent and temperature on device performances5
Investigation on performance degradation due to induced interface trapped charges on HSO based FDSOI NCFET and sustaining it through back-gate bias5
Effects of microwave plasma treatment on β-Ga2O3 Schottky barrier diodes5
Tuning the electronic structures and anisotropic transport behaviors of GeSe monolayer by substitutional doping5
Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications5
Comparative performance analysis and material exploration of ECO-friendly highly efficient perovskite solar cells5
Microwave and furnace annealing in oxygen ambient for performance enhancement of p-type SnO thin-film transistors5
Ridge waveguide lasers with vertically stacked quantum wells and tunnel junctions5
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing5
Tunable Schottky barrier in a graphene/AlP van der Waals heterostructure5
An efficient and facile method to develop defect-free OLED displays5
Numerical approach to optimizing the doping concentration of the absorber layer to enhance the performance of a CdTe solar cell5
Optical property of hexagonal (2H) silicon crystal5
Homoepitaxial growth of 1ˉ02  β-Ga2O3 by halide vapor phase epitaxy5
Power loss of hot Dirac fermions in silicene and its near equivalence with graphene5
Comprehensive investigation of radiofrequency/analog parameters in a ferroelectric tunnel field-effect transistor5
Classification of different post-hyperdoping treatments for enhanced crystallinity of IR-sensitive femtosecond-laser processed silicon5
Effects of AlInN graded polarization-dependent doped top cladding on the performance of deep ultra-violet laser diode emitting at ∼271 nm wavelength5
Enhancing multi-functionality of reconfigurable transistors by implementing high retention capacitorless dynamic memory5
Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method5
Growth modification via indium surfactant for InGaN/GaN green LED5
Boost of orthorhombic population with amorphous SiO2 interfacial layer—a DFT study5
High-performance transparent conductive film by using ultra-thin metal grids5
Sub-bandgap photoresponse and leakage current analysis in gold thin film-hyperdoped silicon photodiodes5
High-speed short-wave infrared Si-based GeSn MQW phototransistor: an alternative to existing photodetectors5
Investigation of an AlGaN-channel Schottky barrier diode on a silicon substrate with a molybdenum anode5
STDP implementation using multi-state spin−orbit torque synapse5
Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high I on/I off5
Organic passivation of Al0.5Ga0.5N epilayers using self-assembled monolayer of Zn(II) porphyrin for improved solar-blind photodetector performance5
A flexible and ultra-highly sensitive tactile sensor based on Mg-doped ZnO nanorods for human vital signs and activity monitoring5
Enhancement in electrical and optical properties of field-effect passivated GaN blue light emitting diodes5
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