Semiconductor Science and Technology

Papers
(The TQCC of Semiconductor Science and Technology is 5. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)
ArticleCitations
The effect of Si ion implantation on the electrical properties of InP thin film on Si(100) substrate fabricated by ion-cutting technique95
Tunnel hole injection in unipolar HgCdTe-based laser diode53
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance49
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity39
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems39
A TCAD-based study on the design and performance of VOFET-based CMOS-like inverters34
Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL33
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach32
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing29
Germanium thin film manufacturing using covalent bonding process29
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications29
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements27
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 327
MISHEMT intrinsic voltage gain under multiple channel output characteristics27
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate26
The ab initio study of n-type nitrogen and gallium co-doped diamond25
Trench super junction power device by plasma doping: a structural, chemical-physical, and profiling investigation21
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices20
Printed in-plane electrolyte-gated transistor based on zinc oxide20
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET19
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor19
Enhanced Breakdown Voltage in GaN Vertical Trench MOSFETs through Mesa-Trench Field Balancing and Mesa Shielding Ring Structure18
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer18
The surface tension of Ga2O3 melt measured by a drop-weight method in an optical floating-zone furnace17
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors17
Classification of different post-hyperdoping treatments for enhanced crystallinity of IR-sensitive femtosecond-laser processed silicon16
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD16
A novel SiC superjunction trench MOSFET with integrated heterojunction diode for reduced power loss and saturation current16
Electrical transport properties of highly doped N-type GaN materials16
Investigation of maximum gain amplifier using a split-stacked recessed gate design on β-Ga2O3 MOSFET for S-band applications16
Microscopic electroluminescence images of 850 nm oxide-confined VCSELs during burn-in16
Influence of anti-reflection coatings on double GaAs/Si heterojunction layers in Si solar cells15
Straightforward synthesis and mechanism insight of TiO2/α′-AgVO3 heterostructure with enhanced photocatalytic activity15
Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity14
The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET14
The impact of composite defects Vi O(Ga) on the electrical properties of β-Ga2O3/AlN heterojunctions14
Study of Ge-on-Si avalanche photodiodes for short-wave infrared applications14
A novel V-grooved vertical GaN-based HEMT on silicon utilizing 2DEG for enhanced performance14
Accurate band alignment of sputtered Sc2O3 on GaN for high electron mobility transistor applications14
Impact of mercury vacancy states on Shockley–Read–Hall recombination in narrow gap HgCdTe14
Enhancing light trapping for improved efficiency of perovskite solar cells: design and analysis13
Optical characterization of deep-level defects in n-type Al x In 13
Enhanced photodetector performance of SnO2/NiO heterojunction via Au incorporation13
Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas13
Low-resistive gate module for RF GaN-HFETs by electroplating13
In2O3 decorated TiO2 for broadband photosensing applications12
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance12
Indirect stress and air-cavity displacement measurement of MEMS tunable VCSELs via micro-Raman and micro-photoluminescence spectroscopy12
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs12
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices12
Power spectral density-based fractal analyses of sputtered yttria-stabilized zirconia thin films12
Comparative performance analysis and material exploration of ECO-friendly highly efficient perovskite solar cells12
The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs11
High performance AlGaN/GaN MISHEMTs using N2O treated TiO2 as the gate dielectric11
Intersection of 4H-SiC Schottky diodes IV curves due to temperature dependent series resistance11
Structural and optical evolution of compressively strained Ge0.965Sn0.035 films on silicon undergoing microwave annealing11
Shallow donor states and interlevel transitions in gapped graphene bilayers11
Design and optimization of DTSCR for high-speed I/O ESD protection of on-chip ICs11
The effect of selenium ion concentration on zinc selenide thin films prepared by a photo-assisted chemical bath deposition method11
Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission11
Optimizing photocurrent intensity in layered SiGe heterostructures11
Insights into the growth of hexagonal Si crystals using Al-based nano absorber10
Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors10
Photoluminescence of an InSb layer on a germanium substrate10
Multi-stage infrared detectors10
Low-temperature preparation and characteristics of top-gate thin-film transistors with La-ZTO active layers and polymethylmethacrylate dielectric layers10
A high-speed avalanche photodiode with large coupling tolerance10
Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recovery10
Thermal conductivity and phonon scattering of AlGaN nanofilms by elastic theory and Boltzmann transport equation10
Recent advances and optoelectronic applications of Cu–Ag–Bi–I quaternary lead-free perovskites10
Effect of dual-channel structures on DC characteristics of vertical trench GaN-based MOSFETs10
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance *10
Effects of microwave plasma treatment on β-Ga2O3 Schottky barrier diodes10
Influence of the nature of the distribution of recombination centers in the space charge region of the p–n junction on the parameters of the current–voltage characteristics within the classical Shockl9
Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect9
Investigation of a minority carrier trap in a NiO/β-Ga2O3 pn heterojunction via deep-level transient spectroscopy9
Unveiling the potential of photonic crystal surface emitting lasers: a concise review9
Effect of annealing temperature on the optoelectronic properties of quinary amorphous oxide semiconductor IGZTO thin films9
Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities9
Survey, taxonomy, and methods of QCA-based design techniques—part I: digital circuits9
Temperature- and gate voltage-dependent I–V modeling of GaN HEMTs based on ASM-HEMT9
Annealing-dependent changes in the structural and electrical properties of NiO epitaxial films9
7 kV/16.5 mΩ·cm 2 E-mode active-passivation p-GaN gate HEMT exceeding SiC unipolar limit9
Sub-bandgap photoresponse and leakage current analysis in gold thin film-hyperdoped silicon photodiodes9
Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures9
Resistor-to-Schottky barrier analytical model for ohmic contact test structures9
Applications of time-resolved photoluminescence for characterizing silicon photovoltaic materials9
Hydroxylation-induced defect states and formation of a bidentate acetate adstructure of TiO2 catalysts with acetic acid variation for catalytic application9
Ellipsometric study of TlInS 2 chalcogenide crystals: exploring their potential in nonlinear optics and optoelectronics9
Estimation of performance degradation due to interface traps in the gate and spacer stack of NC-FinFET9
A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition9
Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications9
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy8
Optimization of tin-based inverted perovskite solar cell with MoS2 interlayer by one-dimensional simulation8
Improving CZTS/ZTO solar cell efficiency with inorganic BSF layers8
Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures8
Domain boundaries in ScAlMgO4 single crystal observed by synchrotron radiation x-ray topography and reticulography8
Characterization of PECVD Si3N4 thin film in multiple oxide–nitride stack for 3D-NAND flash memory8
A novel dual-gate negative capacitance TFET for highly sensitive label free biosensing8
Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs8
Two-waveguide approach for monolithic active/passive photonic integration on GaAs8
Structural and thermodynamic stability in hexagonal-diamond Si 1-x-y Ge x B 8
Investigation on performance degradation due to induced interface trapped charges on HSO based FDSOI NCFET and sustaining it through back-gate bias8
A review of quantum transport in field-effect transistors8
Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation8
A 35 V–5 V monolithic integrated GaN-based DC–DC floating buck converter8
Optimization of a novel β -Ga 2 O 3 vertical FinFET8
A BP-Smith combined temperature control method for thin film preparation processing8
Enhanced resistive switching performance of TiO2 based RRAM device with graphene oxide inserting layer8
Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation8
Investigation of LVTSCR ESD protection devices with RC-INV triggering circuits8
Theoretical investigation to study the influence of strain on the band lineups of core/shell nanostructures8
The thermo-E.M.F. of an n-type silicon: assessment of the contribution due to the presence of minority carriers8
Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric8
Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors8
Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb type-II superlattice photodiodes7
Fermi energy-level shift of p-type AgBiSe2 single crystal featuring semiconductor-to-metal transition at cryogenics7
The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon7
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin7
Study on the series resistance of betavoltaic batteries7
Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets7
Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT7
Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs7
Highly efficient stable blue organic light-emitting diodes based on a novel anthracene[2,3-b]benzofuran framework7
Nanoindentation mechanical studies of bulk AlN single crystals with different orientations7
A critique of length and bias dependent constraints for 1T-DRAM operation through RFET7
Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layers7
Transport and performance study of double-walled black phosphorus nanotube transistors7
DFT study of the structural, electronic and optoelectronic properties of PDAPb(I1−x Br x )4 pero7
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization7
Multi functional ionic Ru(bpy)3(PF6)2 assisted preparation of perovskite solar cell with over 19% and superior stability7
The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects7
Ti supersaturated Si by microwave annealing processes7
A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses7
Advanced trench junction barrier Schottky integrated SiC trench MOSFET with improved switching oscillation suppression7
Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers7
Inverter design with positive feedback field-effect transistors7
The conductivity and electrophysical characteristics of Janus-like TaSi2/Si nanoparticles7
Row hammer-induced D0 failure improvement in sub-20 nm DRAM using an air gap7
Broadband photodetectors based on PbS quantum dots synthesized using the multiple injection growth method7
Electronic transport properties of WS2 using ensemble Monte Carlo method7
Retraction: Potential application of AlP nanosheet semiconductor in the detection of toxic phosgene, thiophosgene, and formaldehyde gases (2022 Semicond. Sci. Technol. 37 095015)7
On the performance of hafnium-oxide-based negative capacitance FinFETs, with and without a spacer7
Photosensitive Schottky diodes based on nanostructured thin films of graphitized carbon formed on Cd1− x Zn 7
GaAs nanocone array-based hybrid solar cells with excellent light-trapping capabilities and enhanced photogeneration rate6
Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics6
Quantitative characterization of self-heating effects in GaN-on-diamond HEMTs with 3C-SiC interfacial layer6
Proton irradiation influence on gate-channel low-field carrier mobility of AlGaN/GaN HEMTs6
A facile method of deriving solar selective nickel-cobalt oxide thin films via spraying process6
Effective control of active interface traps in GaN HEMT epitaxial layers by stress tuning of SiN x passivation layers6
First-principles study on the physical properties of Al-based wide-bandgap perovskites Cs3AlIxBr6-x for optoelectronic applications6
Improved electrical properties of AlGaN/GaN MIS-HEMTs with thermal and plasma-enhanced ALD Al2O3 gate dielectric6
Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method6
Surface defects in 4H-SiC: properties, characterizations and passivation schemes6
CMOS compatible manufacturing of a hybrid SET-FET circuit6
Terahertz monolithic integrated narrow-band filter based on the silicon carbide substrate6
The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs6
Design and simulation of a III-Nitride light emitting transistor6
Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire6
Broadband plasmonic absorption enhancement of perovskite solar cells with embedded Au@SiO2@graphene core–shell nanoparticles6
Optimizing deposition parameters for CBD-grown CdS thin films: insights into morphology, optical, and electrical properties for optoelectronic applications6
High performance solar-blind photodetectors based on MOCVD grown β6
A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same6
Influence of substrate biasing on structural, chemical and electrical properties of Al2O3 thin films deposited by PEALD6
Zinc oxide-based sensor prepared by modified sol–gel route for detection of low concentrations of ethanol, methanol, acetone, and formaldehyde6
Influence of swift heavy ion irradiation on electrical characteristics of β-Ga2O3 Schottky barrier diode6
High mobility Ge 2DHG based MODFETs for low-temperature applications6
Tailoring Al2O3 deposition temperature for enhanced electrical performance and reliability of IGZO thin-film transistors6
Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)6
Study on memory characteristics of fin-shaped feedback field effect transistor6
The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process6
Optimizing CuInSe2 solar cells with kesterite-based upper absorber and back surface field layers for enhanced efficiency: a numerical study6
Channeling step shielding MOSFET design for improved short-circuit withstand time and UIS energy in 1200 V SiC devices6
Stress analysis and characterization of TEOS-based PECVD fabricated SiO2 solid films after thermal annealing6
Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer5
Room temperature interband cascade lasers near 7.7 µm and dependence on structural quality5
Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000 nm communication and sensing applications5
Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers5
Simulation and modeling of a new CsSnI3 solar cell structure: a numerical study5
Impact of pyrolysis temperature on physicochemical properties of carbon nitride photocatalyst5
High-responsivity silicon p–i–n mesa-photodiode5
Room temperature RF-sputtered Cu2O thin films: a promising hole transport layer for antimony chalcogenide solar cells5
Impact of ion implantation and laser processing parameters on carrier lifetimes in gold-hyperdoped silicon5
Simulation study of a novel GaN on Si quasi-vertical reverse-conducting insulated gate bipolar transistor5
Atmospheric neutron-induced single event burnout characterization of 4.5 kV Si IGBTs with spallation neutron irradiation5
Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials5
Efficiency enhancement of triple absorber layer perovskite solar cells with the best materials for electron and hole transport layers: numerical study5
Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation5
Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO2/HfO2 stacked dielectric5
TCAD analysis of SiC trench MOSFET structures with improved frequency figure of merit5
A SiC sidewall enhanced trench JBS diode with improved forward performance5
Demonstrating the electron blocking effect of AlGaN/GaN superlattice cladding layers in GaN-based laser diodes5
Modeling and optimal design of silicon superjunctions considering charge imbalance5
Bias-selectable three-color InAs/GaSb superlattice infrared detectors based on a resonant tunneling barrier5
Non-ideal program-time conservation in charge trap flash for deep learning5
On the photoresponse regulations by deep-level traps in CsPbBr3 single crystal photodetectors5
Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge35
Preparation and operating characteristics analysis of high-speed iron phthalocyanine organic phototriode5
High-performance AlGaN ultraviolet light-emitting diode with a tunnel junction based on inverted architecture5
Improving the accuracy and robustness of RRAM-based in-memory computing against RRAM hardware noise and adversarial attacks5
Investigation of 4,4′-bis[(N- carbazole) styryl] biphenyl (BSB4) for a pure blue fluorescent OLED with enhanced efficiency nearing the theoretical limit5
Study on low-temperature evaporation of Ag2O-based Ag electrode and electron injection layer and their application in OLEDs5
Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer5
A flexible and ultra-highly sensitive tactile sensor based on Mg-doped ZnO nanorods for human vital signs and activity monitoring5
A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect5
Dual-gate material H-channel vertical DGTFET: design, simulation and optimisation study5
Analytic electrostatic model of amorphous-crystalline Ge2Sb2Te5 heterojunction5
Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis5
A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs5
Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET*5
Superjunction IGBT with split carrier storage layer5
The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films5
Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors5
Influence of power ramps on the physical properties of AZO thin films deposited at room temperature by RF magnetron sputtering technique5
Effect of gas pre-decomposition device on the growth of GaN epitaxial layer5
Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A5
Permittivity modulation in Si-based PIN diode by electron irradiation5
Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high I on/I off<5
Investigation on the ESD characteristics of LVTSCR with embedded PNP on the anode side5
C-band InAs/InP quantum dots: alternative growth versus indium-flush for self-assembled growth5
Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout5
Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications5
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