Semiconductor Science and Technology

Papers
(The TQCC of Semiconductor Science and Technology is 5. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)
ArticleCitations
The effect of Si ion implantation on the electrical properties of InP thin film on Si(100) substrate fabricated by ion-cutting technique90
Tunnel hole injection in unipolar HgCdTe-based laser diode70
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer52
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor45
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance38
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity34
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems34
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD33
Trench super junction power device by plasma doping: a structural, chemical-physical, and profiling investigation32
A TCAD-based study on the design and performance of VOFET-based CMOS-like inverters30
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements29
A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Reduced Power Loss and Saturation Current29
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 329
MISHEMT intrinsic voltage gain under multiple channel output characteristics28
The surface tension of Ga2O3 melt measured by a drop-weight method in an optical floating-zone furnace27
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate27
The ab initio study of n-type nitrogen and gallium co-doped diamond26
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing25
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications24
Germanium thin film manufacturing using covalent bonding process23
Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL20
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach20
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices19
Printed in-plane electrolyte-gated transistor based on zinc oxide19
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors19
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET18
Electrical transport properties of highly doped N-type GaN materials18
Investigation of maximum gain amplifier using a split-stacked recessed gate design on β-Ga2O3 MOSFET for S-band applications17
Classification of different post-hyperdoping treatments for enhanced crystallinity of IR-sensitive femtosecond-laser processed silicon17
Influence of anti-reflection coatings on double GaAs/Si heterojunction layers in Si solar cells16
In2O3 decorated TiO2 for broadband photosensing applications16
Straightforward synthesis and mechanism insight of TiO2/α′-AgVO3 heterostructure with enhanced photocatalytic activity16
Enhanced photodetector performance of SnO2/NiO heterojunction via Au incorporation15
A novel V-grooved vertical GaN-based HEMT on silicon utilizing 2DEG for enhanced performance15
Impact of mercury vacancy states on Shockley–Read–Hall recombination in narrow gap HgCdTe15
The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET15
Study of Ge-on-Si avalanche photodiodes for short-wave infrared applications15
The impact of composite defects Vi O(Ga) on the electrical properties of β-Ga2O3/AlN heterojunctions15
Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity14
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance14
Low-resistive gate module for RF GaN-HFETs by electroplating14
Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas14
Accurate band alignment of sputtered Sc2O3 on GaN for high electron mobility transistor applications14
Enhancing light trapping for improved efficiency of perovskite solar cells: design and analysis13
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs13
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices13
Comparative performance analysis and material exploration of ECO-friendly highly efficient perovskite solar cells13
Indirect stress and air-cavity displacement measurement of MEMS tunable VCSELs via micro-Raman and micro-photoluminescence spectroscopy13
The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs12
Structural and optical evolution of compressively strained Ge0.965Sn0.035 films on silicon undergoing microwave annealing12
Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications12
A high-speed avalanche photodiode with large coupling tolerance12
Power spectral density-based fractal analyses of sputtered yttria-stabilized zirconia thin films12
Recent advances and optoelectronic applications of Cu–Ag–Bi–I quaternary lead-free perovskites12
Multi-stage infrared detectors11
Effect of dual-channel structures on DC characteristics of vertical trench GaN-based MOSFETs11
The effect of selenium ion concentration on zinc selenide thin films prepared by a photo-assisted chemical bath deposition method11
Thermal conductivity and phonon scattering of AlGaN nanofilms by elastic theory and Boltzmann transport equation11
Nanoscale wafer patterning using SPM induced local anodic oxidation in InP substrates11
Optimizing photocurrent intensity in layered SiGe heterostructures11
High performance AlGaN/GaN MISHEMTs using N2O treated TiO2 as the gate dielectric11
Intersection of 4H-SiC Schottky diodes IV curves due to temperature dependent series resistance11
Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission11
Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors11
Shallow donor states and interlevel transitions in gapped graphene bilayers11
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance *10
Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recovery10
Insights into the growth of hexagonal Si crystals using Al-based nano absorber10
Low-temperature preparation and characteristics of top-gate thin-film transistors with La-ZTO active layers and polymethylmethacrylate dielectric layers10
Design and optimization of DTSCR for high-speed I/O ESD protection of on-chip ICs10
Photoluminescence of an InSb layer on a germanium substrate10
STDP implementation using multi-state spin−orbit torque synapse10
Optimization of tin-based inverted perovskite solar cell with MoS2 interlayer by one-dimensional simulation10
Dual-mode dendritic devices enhanced neural network based on electrolyte gated transistors10
Experimental and numerical investigation of Poole–Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs10
Effects of microwave plasma treatment on β-Ga2O3 Schottky barrier diodes10
Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities10
Pre-metal dielectric PE TEOS oxide pitting in 3D NAND: mechanism and solutions9
Sub-bandgap photoresponse and leakage current analysis in gold thin film-hyperdoped silicon photodiodes9
Unveiling the potential of photonic crystal surface emitting lasers: a concise review9
Hydroxylation-induced defect states and formation of a bidentate acetate adstructure of TiO2 catalysts with acetic acid variation for catalytic application9
Survey, taxonomy, and methods of QCA-based design techniques—part I: digital circuits9
Estimation of performance degradation due to interface traps in the gate and spacer stack of NC-FinFET9
7 kV/16.5 mΩ·cm2 E-mode active-passivation p-GaN gate HEMT exceeding SiC unipolar limit9
Applications of time-resolved photoluminescence for characterizing silicon photovoltaic materials9
Annealing-dependent changes in the structural and electrical properties of NiO epitaxial films9
Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect9
Temperature- and gate voltage-dependent I–V modeling of GaN HEMTs based on ASM-HEMT9
A review of quantum transport in field-effect transistors9
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy9
A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition9
Investigation on performance degradation due to induced interface trapped charges on HSO based FDSOI NCFET and sustaining it through back-gate bias9
Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures9
Resistor-to-Schottky barrier analytical model for ohmic contact test structures9
Influence of the nature of the distribution of recombination centers in the space charge region of the p–n junction on the parameters of the current–voltage characteristics within the classical Shockl9
A BP-Smith combined temperature control method for thin film preparation processing8
Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs8
A 35 V–5 V monolithic integrated GaN-based DC–DC floating buck converter8
Broadband photodetectors based on PbS quantum dots synthesized using the multiple injection growth method8
DFT study of the structural, electronic and optoelectronic properties of PDAPb(I1−x Br x )4 pero8
Characterization of PECVD Si3N4 thin film in multiple oxide–nitride stack for 3D-NAND flash memory8
Effect of annealing temperature on the optoelectronic properties of quinary amorphous oxide semiconductor IGZTO thin films8
Investigation of LVTSCR ESD protection devices with RC-INV triggering circuits8
Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures8
Enhanced resistive switching performance of TiO2 based RRAM device with graphene oxide inserting layer8
Computational investigation on the photovoltaic performance of an efficient GeSe-based dual-heterojunction thin film solar cell8
Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric8
Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors8
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization8
Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation8
Investigation of a minority carrier trap in a NiO/β-Ga2O3 pn heterojunction via deep-level transient spectroscopy8
Row hammer-induced D0 failure improvement in sub-20 nm DRAM using an air gap8
A novel dual-gate negative capacitance TFET for highly sensitive label free biosensing8
Optimization of a novel β-Ga2O3 vertical FinFETs With Double Drift Layers8
The conductivity and electrophysical characteristics of Janus-like TaSi2/Si nanoparticles8
Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation8
The thermo-E.M.F. of an n-type silicon: assessment of the contribution due to the presence of minority carriers8
The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon8
Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layers8
Improving CZTS/ZTO solar cell efficiency with inorganic BSF layers8
Nanoindentation mechanical studies of bulk AlN single crystals with different orientations7
Domain boundaries in ScAlMgO4 single crystal observed by synchrotron radiation x-ray topography and reticulography7
Reduction of V-pit density and depth in InGaN semibulk templates and improved LED performance with insertion of high temperature semibulk layers7
Photosensitive Schottky diodes based on nanostructured thin films of graphitized carbon formed on Cd1− x Zn 7
A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses7
Ti supersaturated Si by microwave annealing processes7
On the performance of hafnium-oxide-based negative capacitance FinFETs, with and without a spacer7
High-performance narrow spectrum green phosphorescent top-emitting organic light-emitting devices with external quantum efficiency up to 38%7
Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT7
Highly efficient stable blue organic light-emitting diodes based on a novel anthracene[2,3-b]benzofuran framework7
The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects7
Transport and performance study of double-walled black phosphorus nanotube transistors7
Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets7
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin7
The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs7
Calculation of discrete and resonant states of Coulomb acceptor in HgCdTe alloys7
Retraction: Potential application of AlP nanosheet semiconductor in the detection of toxic phosgene, thiophosgene, and formaldehyde gases (2022 Semicond. Sci. Technol. 37 095015)7
Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)7
Enhancement-mode normally-off β-Ga2O3:Si metal-semiconductor field-effect deep-ultraviolet phototransistor7
A critique of length and bias dependent constraints for 1T-DRAM operation through RFET7
Electronic transport properties of WS2 using ensemble Monte Carlo method7
Multi functional ionic Ru(bpy)3(PF6)2 assisted preparation of perovskite solar cell with over 19% and superior stability7
Inverter design with positive feedback field-effect transistors7
Fermi energy-level shift of p-type AgBiSe2 single crystal featuring semiconductor-to-metal transition at cryogenics7
Study on the series resistance of betavoltaic batteries7
Tailoring Al2O3 deposition temperature for enhanced electrical performance and reliability of IGZO thin-film transistors7
Design and simulation of a III-Nitride light emitting transistor7
Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs7
Effective control of active interface traps in GaN HEMT epitaxial layers by stress tuning of SiN x passivation layers7
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures7
Advanced trench junction barrier Schottky integrated SiC trench MOSFET with improved switching oscillation suppression7
Broadband plasmonic absorption enhancement of perovskite solar cells with embedded Au@SiO2@graphene core–shell nanoparticles7
A facile method of deriving solar selective nickel-cobalt oxide thin films via spraying process7
Theoretical investigation to study the influence of strain on the band lineups of core/shell nanostructures7
Influence of swift heavy ion irradiation on electrical characteristics of β-Ga2O3 Schottky barrier diode6
Optimizing CuInSe2 solar cells with kesterite-based upper absorber and back surface field layers for enhanced efficiency: a numerical study6
CMOS compatible manufacturing of a hybrid SET-FET circuit6
Quantitative characterization of self-heating effects in GaN-on-diamond HEMTs with 3C-SiC interfacial layer6
Recent progress in red light-emitting diodes by III-nitride materials6
A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same6
Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer6
Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb type-II superlattice photodiodes6
Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis6
Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000 nm communication and sensing applications6
Simulation and modeling of a new CsSnI3 solar cell structure: a numerical study6
Simulation study of a novel GaN on Si quasi-vertical reverse-conducting insulated gate bipolar transistor6
Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics6
Study of traps in low-temperature polysilicon thin film transistors using a current transient method6
Influence of substrate biasing on structural, chemical and electrical properties of Al2O3 thin films deposited by PEALD6
Zinc oxide-based sensor prepared by modified sol–gel route for detection of low concentrations of ethanol, methanol, acetone, and formaldehyde6
Surface defects in 4H-SiC: properties, characterizations and passivation schemes6
Optimizing deposition parameters for CBD-grown CdS thin films: insights into morphology, optical, and electrical properties for optoelectronic applications6
A flexible and ultra-highly sensitive tactile sensor based on Mg-doped ZnO nanorods for human vital signs and activity monitoring6
High performance solar-blind photodetectors based on MOCVD grown β6
Demonstrating the electron blocking effect of AlGaN/GaN superlattice cladding layers in GaN-based laser diodes6
The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process6
Proton irradiation influence on gate-channel low-field carrier mobility of AlGaN/GaN HEMTs6
Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET*6
Superjunction IGBT with split carrier storage layer6
Improved electrical properties of AlGaN/GaN MIS-HEMTs with thermal and plasma-enhanced ALD Al2O3 gate dielectric6
Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method6
Terahertz monolithic integrated narrow-band filter based on the silicon carbide substrate6
Study on memory characteristics of fin-shaped feedback field effect transistor6
Stress analysis and characterization of TEOS-based PECVD fabricated SiO2 solid films after thermal annealing6
Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials6
High mobility Ge 2DHG based MODFETs for low-temperature applications6
Study on low-temperature evaporation of Ag2O-based Ag electrode and electron injection layer and their application in OLEDs6
Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire6
Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation6
First-principles study on the physical properties of Al-based wide-bandgap perovskites Cs3AlIxBr6-x for optoelectronic applications6
Modeling and optimal design of silicon superjunctions considering charge imbalance6
Impact of pyrolysis temperature on physicochemical properties of carbon nitride photocatalyst6
Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout6
GaAs nanocone array-based hybrid solar cells with excellent light-trapping capabilities and enhanced photogeneration rate6
Bias-selectable three-color InAs/GaSb superlattice infrared detectors based on a resonant tunneling barrier5
Permittivity modulation in Si-based PIN diode by electron irradiation5
Influence of power ramps on the physical properties of AZO thin films deposited at room temperature by RF magnetron sputtering technique5
A junctionless dual-gate MOSFET-based programmable inverter for secured hardware applications using nitride charge trapping5
First demonstration of rapid deuterium annealing for interface trap reduction in HKMG MOSFETs5
The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs5
Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications5
Anti-reflective MX (M = Sc and Y; X = N, P, As, Sb and Bi) monolayers: structural, electronic and optical study5
A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect5
Room temperature RF-sputtered Cu2O thin films: a promising hole transport layer for antimony chalcogenide solar cells5
The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films5
Investigation of 4,4′-bis[(N- carbazole) styryl] biphenyl (BSB4) for a pure blue fluorescent OLED with enhanced efficiency nearing the theoretical limit5
Dual gate material H-channel vertical DGTFET: design, simulation and optimization study5
Room temperature interband cascade lasers near 7.7 µm and dependence on structural quality5
Effect of gas pre-decomposition device on the growth of GaN epitaxial layer5
Preparation and operating characteristics analysis of high-speed iron phthalocyanine organic phototriode5
A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs5
Atmospheric neutron-induced single event burnout characterization of 4.5 kV Si IGBTs with spallation neutron irradiation5
Design and performance analysis of GaN vertical JFETs with ion-implanted gates5
4H-SiC super-junction trench MOS barrier Schottky structure with enhanced figure of merit5
Modified photodiode equivalent circuit model considering coplanar waveguide electrodes5
Improving the accuracy and robustness of RRAM-based in-memory computing against RRAM hardware noise and adversarial attacks5
Epitaxial growth of GaAsBi on thin step-graded InGaAs buffer layers5
Efficiency enhancement of triple absorber layer perovskite solar cells with the best materials for electron and hole transport layers: numerical study5
Over 1.2 GW cm−2 β-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing5
Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO2/HfO2 stacked dielectric5
C-band InAs/InP quantum dots: alternative growth versus indium-flush for self-assembled growth5
Non-ideal program-time conservation in charge trap flash for deep learning5
Biexcitons and quadrons in self-assembled quantum dots5
Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer5
OxRAM + OTS optimization for binarized neural network hardware implementation5
On the photoresponse regulations by deep-level traps in CsPbBr3 single crystal photodetectors5
Impact of ion implantation and laser processing parameters on carrier lifetimes in gold-hyperdoped silicon5
Enhanced photocatalytic degradation of methylene blue using DEA-modified TiO2 thin films5
Strain engineering and strain measurement by spring tethers on suspended epitaxial GaN-on-Si photonic crystal devices5
Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A5
Electrical properties of CuO/ZnO heterojunctions prepared by spray pyrolysis5
Analytic electrostatic model of amorphous-crystalline Ge2Sb2Te5 heterojunction5
Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors5
A SiC sidewall enhanced trench JBS diode with improved forward performance5
Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge35
High-responsivity silicon p–i–n mesa-photodiode5
Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high I on/I off<5
TCAD analysis of SiC trench MOSFET structures with improved frequency figure of merit5
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