Semiconductor Science and Technology

Papers
(The median citation count of Semiconductor Science and Technology is 2. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)
ArticleCitations
The effect of Si ion implantation on the electrical properties of InP thin film on Si(100) substrate fabricated by ion-cutting technique117
Tunnel hole injection in unipolar HgCdTe-based laser diode66
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate63
MISHEMT intrinsic voltage gain under multiple channel output characteristics52
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity50
A TCAD-based study on the design and performance of VOFET-based CMOS-like inverters49
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer44
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices37
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors36
The surface tension of Ga2O3 melt measured by a drop-weight method in an optical floating-zone furnace34
Microscopic electroluminescence images of 850 nm oxide-confined VCSELs during burn-in30
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol.<27
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance27
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor26
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET24
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements23
A novel SiC superjunction trench MOSFET with integrated heterojunction diode for reduced power loss and saturation current21
The ab initio study of n-type nitrogen and gallium co-doped diamond20
First-principles study on the design and performance optimization of MoS - and SnS 2 -based RRAM20
High ultraviolet stability red phosphorescent organic light-emitting diode based on fluorinated copper phthalocyanine interface modification19
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems19
Trench super junction power device by plasma doping: a structural, chemical-physical, and profiling investigation19
Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL19
Enhanced breakdown voltage in GaN vertical trench MOSFETs through mesa-trench field balancing and mesa shielding ring structure18
Degradation mechanism of static and capacitance characteristics of 700 V p-GaN gate HEMT under repetitive unclamped inductive switching stress17
Investigation of maximum gain amplifier using a split-stacked recessed gate design on β-Ga2O3 MOSFET for S-band applications16
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD16
The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET15
Influence of anti-reflection coatings on double GaAs/Si heterojunction layers in Si solar cells15
Accurate band alignment of sputtered Sc2O3 on GaN for high electron mobility transistor applications15
Straightforward synthesis and mechanism insight of TiO2/α′-AgVO3 heterostructure with enhanced photocatalytic activity15
Power spectral density-based fractal analyses of sputtered yttria-stabilized zirconia thin films15
Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas14
Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity14
Enhancing light trapping for improved efficiency of perovskite solar cells: design and analysis14
Optical characterization of deep-level defects in n-type Al x In 14
In2O3 decorated TiO2 for broadband photosensing applications14
Comparative performance analysis and material exploration of ECO-friendly highly efficient perovskite solar cells14
Negative differential resistance in glutathione-functionalized MoS 2 quantum dot-based resistive switching devices13
Impact of mercury vacancy states on Shockley–Read–Hall recombination in narrow gap HgCdTe13
Recent advances in 2D-based semiconductor catalysts for hydrogen evolution reactions13
Low-resistive gate module for RF GaN-HFETs by electroplating13
Study of Ge-on-Si avalanche photodiodes for short-wave infrared applications13
Enhanced photodetector performance of SnO2/NiO heterojunction via Au incorporation13
Classification of different post-hyperdoping treatments for enhanced crystallinity of IR-sensitive femtosecond-laser processed silicon13
A novel V-grooved vertical GaN-based HEMT on silicon utilizing 2DEG for enhanced performance12
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices12
The impact of composite defects Vi O(Ga) on the electrical properties of β-Ga2O3/AlN heterojunctions12
High performance AlGaN/GaN MISHEMTs using N2O treated TiO2 as the gate dielectric11
Design and investigation of a label-free biosensor based on dual material gate heterostructure pocket tunneling field-effect transistor11
A high-speed avalanche photodiode with large coupling tolerance11
The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs11
Efficacy of π -gate in LDMOS for improved safe operating area and figure of merits11
Shallow donor states and interlevel transitions in gapped graphene bilayers11
Optimizing photocurrent intensity in layered SiGe heterostructures11
Paper-based multi-gate EDL transistors with differentiated bottom and lateral gate coupling for multi-input neuromorphic integration11
Effect of dual-channel structures on DC characteristics of vertical trench GaN-based MOSFETs11
Structural and optical evolution of compressively strained Ge0.965Sn0.035 films on silicon undergoing microwave annealing11
Low-temperature preparation and characteristics of top-gate thin-film transistors with La-ZTO active layers and polymethylmethacrylate dielectric layers11
Simultaneous derivation of carrier mobility through admittance spectroscopy on MBE grown GaAs/AlₓGa₁₋ₓAs based solar cell device11
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance *10
The effect of selenium ion concentration on zinc selenide thin films prepared by a photo-assisted chemical bath deposition method10
Intersection of 4H-SiC Schottky diodes IV curves due to temperature dependent series resistance10
Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors10
Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications10
A surface-potential-based compact model for cryogenic MOSFETs including the band tail effects10
Multi-stage infrared detectors10
Monolithically integrated GaN hysteresis comparator based on complementary logic10
Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission10
Perovskite solar cells: a comprehensive review of material design, device structure, and commercialization prospects10
Diamond/SiC heterojunction GTO for nanosecond switching enabled by super-injection effect9
Resistor-to-Schottky barrier analytical model for ohmic contact test structures9
Effect of annealing temperature on the optoelectronic properties of quinary amorphous oxide semiconductor IGZTO thin films9
7 kV/16.5 mΩ·cm 2 E-mode active-passivation p-GaN gate HEMT exceeding SiC unipolar limit9
Investigation on performance degradation due to induced interface trapped charges on HSO based FDSOI NCFET and sustaining it through back-gate bias9
Estimation of performance degradation due to interface traps in the gate and spacer stack of NC-FinFET9
Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures9
Two-waveguide approach for monolithic active/passive photonic integration on GaAs9
Recent advances and optoelectronic applications of Cu–Ag–Bi–I quaternary lead-free perovskites9
Effects of microwave plasma treatment on β-Ga2O3 Schottky barrier diodes9
Annealing-dependent changes in the structural and electrical properties of NiO epitaxial films9
Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation9
Optimization of tin-based inverted perovskite solar cell with MoS2 interlayer by one-dimensional simulation9
Sub-bandgap photoresponse and leakage current analysis in gold thin film-hyperdoped silicon photodiodes9
Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect9
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy9
Temperature- and gate voltage-dependent I–V modeling of GaN HEMTs based on ASM-HEMT9
Structural and thermodynamic stability in hexagonal-diamond 9
A novel double-channel sic trench MOSFET realized by integrating n-PolySi/sic heterojunction tunneling transistor9
Unveiling the potential of photonic crystal surface emitting lasers: a concise review9
Applications of time-resolved photoluminescence for characterizing silicon photovoltaic materials9
Influence of aluminium incorporation on the semiconducting properties of p-type tin monoxide9
Influence of the nature of the distribution of recombination centers in the space charge region of the p–n junction on the parameters of the current–voltage characteristics within the classical Shockl9
Enhanced resistive switching performance of TiO2 based RRAM device with graphene oxide inserting layer8
Impact of CMP surface quality and pre-epitaxial H 2 treatment on the surface defect mitigation and electrical characteristics of 6.5 kV SiC MOSFET8
Investigation of LVTSCR ESD protection devices with RC-INV triggering circuits8
Hetero-dielectric step-shaped double-gate TFET on SELBOX substrate with SiGe pocket: suppressed ambipolarity, comprehensive DC, RF, and noise performance evaluation under thermal variation8
Theoretical investigation to study the influence of strain on the band lineups of core/shell nanostructures8
A 35 V–5 V monolithic integrated GaN-based DC–DC floating buck converter8
Ellipsometric study of TlInS 2 chalcogenide crystals: exploring their potential in nonlinear optics and optoelectronics8
Improving CZTS/ZTO solar cell efficiency with inorganic BSF layers8
Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures8
DFT study of the structural, electronic and optoelectronic properties of PDAPb(I1−x Br x )4 pero8
Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation8
Characterization of PECVD Si3N4 thin film in multiple oxide–nitride stack for 3D-NAND flash memory8
Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities8
Investigation of a minority carrier trap in a NiO/β-Ga2O3 pn heterojunction via deep-level transient spectroscopy8
Effect of two-dimensional nonlocal screening on mobility of electrons in transition-metal dichalcogenide monolayers8
Low-voltage-triggered SCR with resistor-capacitance detection circuit for ESD protection of SPAD readout circuits8
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization8
Domain boundaries in ScAlMgO4 single crystal observed by synchrotron radiation x-ray topography and reticulography8
Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT7
3D simulation study of decoupled dual-gate p-GaN power HEMT with high forward threshold voltage and low reverse conduction loss7
A BP-Smith combined temperature control method for thin film preparation processing7
Broadband photodetectors based on PbS quantum dots synthesized using the multiple injection growth method7
Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric7
A novel dual-gate negative capacitance TFET for highly sensitive label free biosensing7
Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layers7
Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs7
Highly efficient stable blue organic light-emitting diodes based on a novel anthracene[2,3-b]benzofuran framework7
The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon7
Row hammer-induced D0 failure improvement in sub-20 nm DRAM using an air gap7
Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs7
Study on the series resistance of betavoltaic batteries7
The thermo-E.M.F. of an n-type silicon: assessment of the contribution due to the presence of minority carriers7
Self-compensation by silicon DX centers in ultrawide-bandgap nitrides7
Retraction: Potential application of AlP nanosheet semiconductor in the detection of toxic phosgene, thiophosgene, and formaldehyde gases (2022 Semicond. Sci. Technol. 7
The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs7
Electronic transport properties of WS2 using ensemble Monte Carlo method7
Tailoring Al2O3 deposition temperature for enhanced electrical performance and reliability of IGZO thin-film transistors7
Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors7
Sustainable magnesiothermic reduction of rice husk ash–derived silica: comparative effects of NaCl and KCl molten salts on silicon microstructure and electrical properties7
The conductivity and electrophysical characteristics of Janus-like TaSi2/Si nanoparticles7
Optimization of a novel β -Ga 2 O 3 vertical FinFET7
Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)7
Synergistic enhancement of threshold voltage in AlGaN/GaN HEMTs using ferroelectric HfO 2 /ZrO 2 g7
Quantitative characterization of self-heating effects in GaN-on-diamond HEMTs with 3C-SiC interfacial layer6
Terahertz monolithic integrated narrow-band filter based on the silicon carbide substrate6
Recent advances in heterojunction engineering of β -Ga 2 O 3 6
Optimizing CuInSe2 solar cells with kesterite-based upper absorber and back surface field layers for enhanced efficiency: a numerical study6
Electro-thermal analysis of device geometry dependence on the amorphous cap size in phase change memory devices6
Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics6
Nanoindentation mechanical studies of bulk AlN single crystals with different orientations6
The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process6
A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses6
A facile method of deriving solar selective nickel-cobalt oxide thin films via spraying process6
Effective control of active interface traps in GaN HEMT epitaxial layers by stress tuning of SiN x passivation layers6
Proton irradiation influence on gate-channel low-field carrier mobility of AlGaN/GaN HEMTs6
High mobility Ge 2DHG based MODFETs for low-temperature applications6
Frequency-dependent threshold voltage instability in hydrogen-terminated diamond MOSFETs under dynamic gate-bias stress6
Experimental study of the effect of neutron radiation on a super-junction IGBT6
First-principles study on the physical properties of Al-based wide-bandgap perovskites Cs3AlIxBr6-x for optoelectronic applications6
A fast extraction method of negative bias temperature instability (NBTI) generated permanent defects activation energy using temperature step stress6
Design and simulation of a III-Nitride light emitting transistor6
The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects6
High performance solar-blind photodetectors based on MOCVD grown β6
Advanced trench junction barrier Schottky integrated SiC trench MOSFET with improved switching oscillation suppression6
Carrier Capture-Recombination Competition Governs Non-Monotonic Photoluminescence in InGaN/GaN Quantum Dots6
Influence of swift heavy ion irradiation on electrical characteristics of β-Ga2O3 Schottky barrier diode6
Channeling step shielding MOSFET design for improved short-circuit withstand time and UIS energy in 1200 V SiC devices6
CMOS compatible manufacturing of a hybrid SET-FET circuit6
Cryogenic coating technique for performance recovery in silicon solar cells6
Optimizing deposition parameters for CBD-grown CdS thin films: insights into morphology, optical, and electrical properties for optoelectronic applications6
Exploring steep subthreshold characteristics of tunnel field-effect transistors for leaky integrate-and-fire neurons in neuromorphic computing6
A critique of length and bias dependent constraints for 1T-DRAM operation through RFET6
Ti supersaturated Si by microwave annealing processes6
Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire6
Multi functional ionic Ru(bpy) 3 (PF 6 ) 2 assi6
Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb type-II superlattice photodiodes6
Enhanced selective etching of SiON using low-GWP C 3 F 6 as an alternative to CF 5
Permittivity modulation in Si-based PIN diode by electron irradiation5
Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis5
Demonstrating the electron blocking effect of AlGaN/GaN superlattice cladding layers in GaN-based laser diodes5
Modeling and optimal design of silicon superjunctions considering charge imbalance5
Superjunction IGBT with split carrier storage layer5
Zinc oxide-based sensor prepared by modified sol–gel route for detection of low concentrations of ethanol, methanol, acetone, and formaldehyde5
Effective mobility in N-MOSFET: comparison of McLarty and split CV methods, and the mobility degradatio5
Gallium oxide Schottky diode defects and control5
a -plane GaN-based fully vertical FinFETs with normally-off operation5
A surface plasmonic coupled mid-long-infrared quantum well detector5
Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET*5
Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout5
Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000 nm communication and sensing applications5
Investigation on the ESD characteristics of LVTSCR with embedded PNP on the anode side5
Simulation study of a novel GaN on Si quasi-vertical reverse-conducting insulated gate bipolar transistor5
Surface defects in 4H-SiC: properties, characterizations and passivation schemes5
Improved electrical properties of AlGaN/GaN MIS-HEMTs with thermal and plasma-enhanced ALD Al2O3 gate dielectric5
Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation5
Preparation and operating characteristics analysis of high-speed iron phthalocyanine organic phototriode5
Impact of pyrolysis temperature on physicochemical properties of carbon nitride photocatalyst5
Optimized design and simulation of memristive silicon nanowire for resistive switching applications5
Dual-gate material H-channel vertical DGTFET: design, simulation and optimisation study5
A flexible and ultra-highly sensitive tactile sensor based on Mg-doped ZnO nanorods for human vital signs and activity monitoring5
Stress analysis and characterization of TEOS-based PECVD fabricated SiO2 solid films after thermal annealing5
Flexible 3C-SiC strain-sensing layers transferred from silicon substrates by mechanical exfoliation5
Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method5
Study on low-temperature evaporation of Ag2O-based Ag electrode and electron injection layer and their application in OLEDs5
Bias-selectable three-color InAs/GaSb superlattice infrared detectors based on a resonant tunneling barrier5
Impact of active area and gate line width roughness on SRAM stability: role of low-frequency noise and process variability in advanced IC manufacturing5
Metallisation-associated degradation of silicon coated with thin dielectric layers4
Anti-reflective MX (M = Sc and Y; X = N, P, As, Sb and Bi) monolayers: structural, electronic and optical study4
TCAD analysis of SiC trench MOSFET structures with improved frequency figure of merit4
The photoelectric and defect properties in B-sites doped α -CsPbI 3 by first-principles4
Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer4
Studying the impact of intrinsic layer shape on the performance of p–i–n photodiodes in standard SiPh processes4
On the photoresponse regulations by deep-level traps in CsPbBr3 single crystal photodetectors4
First demonstration of rapid deuterium annealing for interface trap reduction in HKMG MOSFETs4
Simulation and modeling of a new CsSnI3 solar cell structure: a numerical study4
Micro-textured In O /IGZO heterostructure thin-film transistors with enhanced field-effect mob4
Efficiency enhancement of triple absorber layer perovskite solar cells with the best materials for electron and hole transport layers: numerical study4
Low thermal boundary resistance and reduced junction temperature in GaN HEMTs via AlN-mediated top-side diamond integration4
Rapid hydrogen annealing for enhanced device performance and reduced thermal budget4
A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs4
The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs4
Influence of power ramps on the physical properties of AZO thin films deposited at room temperature by RF magnetron sputtering technique4
A junctionless dual-gate MOSFET-based programmable inverter for secured hardware applications using nitride charge trapping4
Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications4
Band alignment of heterojunctions formed by different polar GaN and two of two-dimensional materials: h-BN and MoSe 24
Phosphorus vacancy as a dominant donor in n-InP single crystals grown by VGF method4
Strain engineering and strain measurement by spring tethers on suspended epitaxial GaN-on-Si photonic crystal devices4
Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A4
Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors4
Non-ideal program-time conservation in charge trap flash for deep learning4
Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials4
Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer4
Design and performance analysis of GaN vertical JFETs with ion-implanted gates4
Enhanced photocatalytic degradation of methylene blue using DEA-modified TiO2 thin films4
Over 1.2 GW cm−2 β-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing4
The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films4
Impact of ion implantation and laser processing parameters on carrier lifetimes in gold-hyperdoped silicon4
Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO2/HfO2 stacked dielectric4
Modified photodiode equivalent circuit model considering coplanar waveguide electrodes4
High-performance AlGaN ultraviolet light-emitting diode with a tunnel junction based on inverted architecture4
Electrical properties of CuO/ZnO heterojunctions prepared by spray pyrolysis4
Atmospheric neutron-induced single event burnout characterization of 4.5 kV Si IGBTs with spallation neutron irradiation4
Biexcitons and quadrons in self-assembled quantum dots4
Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high I on/I off<4
Review on fabrication and applications of GaN nanorods4
Effect of gas pre-decomposition device on the growth of GaN epitaxial layer4
Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer4
High-responsivity silicon p–i–n mesa-photodiode4
Room temperature interband cascade lasers near 7.7 µm and dependence on structural quality4
Numerical optimization of hybrid 2D/3D and tandem perovskite/silicon HTJ solar cells, based on an experimentally validated MAPbI 3 cell: influence of4
Cellular breakdown and carrier lifetimes in gold-hyperdoped silicon4
C-band InAs/InP quantum dots: alternative growth versus indium-flush for self-assembled growth4
The effect of series stacking on fast interruption for drift step recovery diode4
A unified optimization theory for 3D HKMOS: from circular to polygonal cell design3
Effect of distributed Bragg reflectors on optoelectronic characteristics of GaN-based flip-chip light-emitting diodes3
Perovskite/silicon tandem solar cells: a comprehensive review of recent strategies and progress3
Suppression of charges within an Al 2 O 3 high- κ d3
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