Semiconductor Science and Technology

Article	Citations
The effect of Si ion implantation on the electrical properties of InP thin film on Si(100) substrate fabricated by ion-cutting technique	111
Tunnel hole injection in unipolar HgCdTe-based laser diode	61
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate	48
Trench super junction power device by plasma doping: a structural, chemical-physical, and profiling investigation	47
MISHEMT intrinsic voltage gain under multiple channel output characteristics	46
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity	41
Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL	34
A TCAD-based study on the design and performance of VOFET-based CMOS-like inverters	34
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach	33
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications	33
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer	27
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices	26
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors	23
Microscopic electroluminescence images of 850 nm oxide-confined VCSELs during burn-in	22
The surface tension of Ga2O3 melt measured by a drop-weight method in an optical floating-zone furnace	22
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol.<	20
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance	20
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor	19
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET	19
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements	18
The ab initio study of n-type nitrogen and gallium co-doped diamond	18
Enhanced breakdown voltage in GaN vertical trench MOSFETs through mesa-trench field balancing and mesa shielding ring structure	18
First-principles study on the design and performance optimization of MoS ₂ - and SnS 2 -based RRAM	18
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD	17
High ultraviolet stability red phosphorescent organic light-emitting diode based on fluorinated copper phthalocyanine interface modification	17

A novel SiC superjunction trench MOSFET with integrated heterojunction diode for reduced power loss and saturation current	16
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems	15
Investigation of maximum gain amplifier using a split-stacked recessed gate design on β-Ga2O3 MOSFET for S-band applications	15
Straightforward synthesis and mechanism insight of TiO2/α′-AgVO3 heterostructure with enhanced photocatalytic activity	15
Classification of different post-hyperdoping treatments for enhanced crystallinity of IR-sensitive femtosecond-laser processed silicon	15
Influence of anti-reflection coatings on double GaAs/Si heterojunction layers in Si solar cells	15
Study of Ge-on-Si avalanche photodiodes for short-wave infrared applications	14
The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET	14
Power spectral density-based fractal analyses of sputtered yttria-stabilized zirconia thin films	14
A novel V-grooved vertical GaN-based HEMT on silicon utilizing 2DEG for enhanced performance	14
Comparative performance analysis and material exploration of ECO-friendly highly efficient perovskite solar cells	13
Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas	13
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices	13
Optical characterization of deep-level defects in n-type Al x In	13
Accurate band alignment of sputtered Sc2O3 on GaN for high electron mobility transistor applications	13
Negative differential resistance in glutathione-functionalized MoS 2 quantum dot-based resistive switching devices	13
Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity	13
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs	13
Enhancing light trapping for improved efficiency of perovskite solar cells: design and analysis	13
In2O3 decorated TiO2 for broadband photosensing applications	13
Low-resistive gate module for RF GaN-HFETs by electroplating	12
Recent advances in 2D-based semiconductor catalysts for hydrogen evolution reactions	12
Impact of mercury vacancy states on Shockley–Read–Hall recombination in narrow gap HgCdTe	12
The impact of composite defects Vi O(Ga) on the electrical properties of β-Ga2O3/AlN heterojunctions	12
Enhanced photodetector performance of SnO2/NiO heterojunction via Au incorporation	12
Low-temperature preparation and characteristics of top-gate thin-film transistors with La-ZTO active layers and polymethylmethacrylate dielectric layers	11
Modeling and characterization of low frequency noise in self-aligned top-gate coplanar IGZO thin-film transistors	11
Optimizing photocurrent intensity in layered SiGe heterostructures	11
A high-speed avalanche photodiode with large coupling tolerance	11
Effect of dual-channel structures on DC characteristics of vertical trench GaN-based MOSFETs	11
Shallow donor states and interlevel transitions in gapped graphene bilayers	11
The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs	11
Effects of microwave plasma treatment on β-Ga2O3 Schottky barrier diodes	10
High performance AlGaN/GaN MISHEMTs using N2O treated TiO2 as the gate dielectric	10
Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications	10
Efficacy of π -gate in LDMOS for improved safe operating area and figure of merits	10
Intersection of 4H-SiC Schottky diodes I–V curves due to temperature dependent series resistance	10
Design and investigation of a label-free biosensor based on dual material gate heterostructure pocket tunneling field-effect transistor	10
Threshold-voltage bias-instability in SiC MOSFETs: effects of stress temperature and level on oxide charge buildup and recovery	10
Structural and optical evolution of compressively strained Ge0.965Sn0.035 films on silicon undergoing microwave annealing	10
The effect of selenium ion concentration on zinc selenide thin films prepared by a photo-assisted chemical bath deposition method	10
Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities	9
Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission	9
Monolithically integrated GaN hysteresis comparator based on complementary logic	9
Accurate analytical models of hot carrier degradation in nMOSFET and nFinFET considering saturation effect	9
Structural and thermodynamic stability in hexagonal-diamond	9
Effect of annealing temperature on the optoelectronic properties of quinary amorphous oxide semiconductor IGZTO thin films	9
Influence of the nature of the distribution of recombination centers in the space charge region of the p–n junction on the parameters of the current–voltage characteristics within the classical Shockl	9
Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation	9
Recent advances and optoelectronic applications of Cu–Ag–Bi–I quaternary lead-free perovskites	9

Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance *	9
Two-waveguide approach for monolithic active/passive photonic integration on GaAs	9
Enhancing light absorption of deep ultraviolet photodiodes through intelligent algorithm-guided design of resonant nano-optical structures	9
Annealing-dependent changes in the structural and electrical properties of NiO epitaxial films	9
Optimization of tin-based inverted perovskite solar cell with MoS2 interlayer by one-dimensional simulation	9
Resistor-to-Schottky barrier analytical model for ohmic contact test structures	9
Multi-stage infrared detectors	9
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy	9
Temperature- and gate voltage-dependent I–V modeling of GaN HEMTs based on ASM-HEMT	9
Ellipsometric study of TlInS 2 chalcogenide crystals: exploring their potential in nonlinear optics and optoelectronics	9
Estimation of performance degradation due to interface traps in the gate and spacer stack of NC-FinFET	9
Enhanced resistive switching performance of TiO2 based RRAM device with graphene oxide inserting layer	9
Optimization of a novel β -Ga 2 O 3 vertical FinFET	8
Improving CZTS/ZTO solar cell efficiency with inorganic BSF layers	8
Influence of aluminium incorporation on the semiconducting properties of p-type tin monoxide	8
7 kV/16.5 mΩ·cm 2 E-mode active-passivation p-GaN gate HEMT exceeding SiC unipolar limit	8
Unveiling the potential of photonic crystal surface emitting lasers: a concise review	8
The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon	8
Theoretical investigation to study the influence of strain on the band lineups of core/shell nanostructures	8
Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation	8
A BP-Smith combined temperature control method for thin film preparation processing	8
A novel double-channel sic trench MOSFET realized by integrating n-PolySi/sic heterojunction tunneling transistor	8
Applications of time-resolved photoluminescence for characterizing silicon photovoltaic materials	8
Investigation of LVTSCR ESD protection devices with RC-INV triggering circuits	8
Hetero-dielectric step-shaped double-gate TFET on SELBOX substrate with SiGe pocket: suppressed ambipolarity, comprehensive DC, RF, and noise performance evaluation under thermal variation	8
DFT study of the structural, electronic and optoelectronic properties of PDAPb(I1−x Br x )4 pero	8
Row hammer-induced D0 failure improvement in sub-20 nm DRAM using an air gap	8
Sub-bandgap photoresponse and leakage current analysis in gold thin film-hyperdoped silicon photodiodes	8
Investigation on performance degradation due to induced interface trapped charges on HSO based FDSOI NCFET and sustaining it through back-gate bias	8
Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy	8
Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures	8
Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors	8
Low-voltage-triggered SCR with resistor-capacitance detection circuit for ESD protection of SPAD readout circuits	8
Transport and performance study of double-walled black phosphorus nanotube transistors	8
Ti supersaturated Si by microwave annealing processes	7
A critique of length and bias dependent constraints for 1T-DRAM operation through RFET	7
Effect of two-dimensional nonlocal screening on mobility of electrons in transition-metal dichalcogenide monolayers	7
Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layers	7
The conductivity and electrophysical characteristics of Janus-like TaSi2/Si nanoparticles	7
A 35 V–5 V monolithic integrated GaN-based DC–DC floating buck converter	7
Domain boundaries in ScAlMgO4 single crystal observed by synchrotron radiation x-ray topography and reticulography	7
Tailoring Al2O3 deposition temperature for enhanced electrical performance and reliability of IGZO thin-film transistors	7
High performance solar-blind photodetectors based on MOCVD grown β	7
The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects	7
Multi functional ionic Ru(bpy) 3 (PF 6 ) 2 assi	7
Sustainable magnesiothermic reduction of rice husk ash–derived silica: comparative effects of NaCl and KCl molten salts on silicon microstructure and electrical properties	7
Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets	7
A novel dual-gate negative capacitance TFET for highly sensitive label free biosensing	7
Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric	7
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization	7
Electronic transport properties of WS2 using ensemble Monte Carlo method	7
Effective control of active interface traps in GaN HEMT epitaxial layers by stress tuning of SiN x passivation layers	7
Effect of stress control by growth adjustment on the edge thread dislocation density of AlN grown on the sapphire	7
Advanced trench junction barrier Schottky integrated SiC trench MOSFET with improved switching oscillation suppression	7
Retraction: Potential application of AlP nanosheet semiconductor in the detection of toxic phosgene, thiophosgene, and formaldehyde gases (2022 Semicond. Sci. Technol.	7
Optimization of p-type contact for electrical injection and light extraction for 365 nm UV-A LEDs	7
Broadband photodetectors based on PbS quantum dots synthesized using the multiple injection growth method	7
Characterization of PECVD Si3N4 thin film in multiple oxide–nitride stack for 3D-NAND flash memory	7
The thermo-E.M.F. of an n-type silicon: assessment of the contribution due to the presence of minority carriers	7
Study on the series resistance of betavoltaic batteries	7
Highly efficient stable blue organic light-emitting diodes based on a novel anthracene[2,3-b]benzofuran framework	7
A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses	7
A facile method of deriving solar selective nickel-cobalt oxide thin films via spraying process	7
Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics	6
Terahertz monolithic integrated narrow-band filter based on the silicon carbide substrate	6
Optimizing CuInSe2 solar cells with kesterite-based upper absorber and back surface field layers for enhanced efficiency: a numerical study	6
Exploring Steep Subthreshold characteristics of TFET for Leaky Integrate and Fire neuron in Neuromorphic Computing	6
Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs	6
Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb type-II superlattice photodiodes	6
Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)	6
Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method	6
Experimental study of the effect of neutron radiation on a super-junction IGBT	6
CMOS compatible manufacturing of a hybrid SET-FET circuit	6
GaAs nanocone array-based hybrid solar cells with excellent light-trapping capabilities and enhanced photogeneration rate	6
Proton irradiation influence on gate-channel low-field carrier mobility of AlGaN/GaN HEMTs	6
The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process	6
The impacts of SiO2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs	6
Design and simulation of a III-Nitride light emitting transistor	6
First-principles study on the physical properties of Al-based wide-bandgap perovskites Cs3AlIxBr6-x for optoelectronic applications	6
Surface defects in 4H-SiC: properties, characterizations and passivation schemes	6

Stress analysis and characterization of TEOS-based PECVD fabricated SiO2 solid films after thermal annealing	6
Frequency-dependent threshold voltage instability in hydrogen-terminated diamond MOSFETs under dynamic gate-bias stress	6
Zinc oxide-based sensor prepared by modified sol–gel route for detection of low concentrations of ethanol, methanol, acetone, and formaldehyde	6
Quantitative characterization of self-heating effects in GaN-on-diamond HEMTs with 3C-SiC interfacial layer	6
Electro-thermal analysis of device geometry dependence on the amorphous cap size in phase change memory devices	6
Nanoindentation mechanical studies of bulk AlN single crystals with different orientations	6
Optimizing deposition parameters for CBD-grown CdS thin films: insights into morphology, optical, and electrical properties for optoelectronic applications	6
Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT	6
Cryogenic coating technique for performance recovery in silicon solar cells	6
Enhanced selective etching of SiON using low-GWP C 3 F 6 as an alternative to CF	5
Negative capacitance gate-all-around PZT silicon nanowire with high-K/metal gate MFIS structure for low SS and high I on/I off<	5
Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation	5
Gallium oxide Schottky diode defects and control	5
Impact of pyrolysis temperature on physicochemical properties of carbon nitride photocatalyst	5
A flexible and ultra-highly sensitive tactile sensor based on Mg-doped ZnO nanorods for human vital signs and activity monitoring	5
Simulation and modeling of a new CsSnI3 solar cell structure: a numerical study	5
Demonstrating the electron blocking effect of AlGaN/GaN superlattice cladding layers in GaN-based laser diodes	5
Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000 nm communication and sensing applications	5
Evaluation of vibrational properties and local structure change during phase transition in Ge2Sb2Te5 and In3SbTe2 phase change materials	5
Simulation study of a novel GaN on Si quasi-vertical reverse-conducting insulated gate bipolar transistor	5
High mobility Ge 2DHG based MODFETs for low-temperature applications	5
Study on low-temperature evaporation of Ag2O-based Ag electrode and electron injection layer and their application in OLEDs	5
Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout	5
Effective mobility in N-MOSFET: comparison of McLarty and split C – V methods, and the mobility degradatio	5
Non-ideal program-time conservation in charge trap flash for deep learning	5
On the photoresponse regulations by deep-level traps in CsPbBr3 single crystal photodetectors	5
a -plane GaN-based fully vertical FinFETs with normally-off operation	5
Permittivity modulation in Si-based PIN diode by electron irradiation	5
Investigation on the ESD characteristics of LVTSCR with embedded PNP on the anode side	5
Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis	5
Modeling and optimal design of silicon superjunctions considering charge imbalance	5
Influence of swift heavy ion irradiation on electrical characteristics of β-Ga2O3 Schottky barrier diode	5
Improved electrical properties of AlGaN/GaN MIS-HEMTs with thermal and plasma-enhanced ALD Al2O3 gate dielectric	5
Channeling step shielding MOSFET design for improved short-circuit withstand time and UIS energy in 1200 V SiC devices	5
Flexible 3C-SiC strain-sensing layers transferred from silicon substrates by mechanical exfoliation	5
Bias-selectable three-color InAs/GaSb superlattice infrared detectors based on a resonant tunneling barrier	5
Micro-textured In ₂ O ₃ /IGZO heterostructure thin-film transistors with enhanced field-effect mob	5
Effect of gas pre-decomposition device on the growth of GaN epitaxial layer	5
Impact of active area and gate line width roughness on SRAM stability: role of low-frequency noise and process variability in advanced IC manufacturing	5
Preparation and operating characteristics analysis of high-speed iron phthalocyanine organic phototriode	5
A surface plasmonic coupled mid-long-infrared quantum well detector	5
Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer	5
A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same	5
Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET*	5
Superjunction IGBT with split carrier storage layer	5
Recent advances in heterojunction engineering of β -Ga 2 O 3	5
Dual-gate material H-channel vertical DGTFET: design, simulation and optimisation study	5
Fabrication of Al doped α-GaOOH nanorod arrays on FTO for self-powered photoelectrochemical solar-blind UV photodetectors	4
Biexcitons and quadrons in self-assembled quantum dots	4
A 4H-SiC super-junction trench MOS barrier Schottky structure with an enhanced figure of merit	4
The photoelectric and defect properties in B-sites doped α -CsPbI 3 by first-principles	4
The effect of series stacking on fast interruption for drift step recovery diode	4
C-band InAs/InP quantum dots: alternative growth versus indium-flush for self-assembled growth	4
Phosphorus vacancy as a dominant donor in n-InP single crystals grown by VGF method	4
Rapid hydrogen annealing for enhanced device performance and reduced thermal budget	4
The effect of Ar:O2 gas ratios on the structural and optical properties of RF sputter-deposited La2O3-doped ZnO thin films	4
Cellular breakdown and carrier lifetimes in gold-hyperdoped silicon	4
A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs	4
Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO2/HfO2 stacked dielectric	4
Design and performance analysis of GaN vertical JFETs with ion-implanted gates	4
Infrared extinction in heavily doped CdTe:Cr single crystals at room temperature	4
Numerical investigation of split-decoupled gate design for threshold voltage stabilization in p-GaN HEMT	4
Room temperature RF-sputtered Cu2O thin films: a promising hole transport layer for antimony chalcogenide solar cells	4
High-responsivity silicon p–i–n mesa-photodiode	4
Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunneling diodes	4
Anti-reflective MX (M = Sc and Y; X = N, P, As, Sb and Bi) monolayers: structural, electronic and optical study	4
A 16 nm FinFET circuit with triple function as digital multiplexer, active-high and active-low output decoder for high-performance SRAM architecture	4
Band alignment of heterojunctions formed by different polar GaN and two of two-dimensional materials: h-BN and MoSe 2	4
Impact of ion implantation and laser processing parameters on carrier lifetimes in gold-hyperdoped silicon	4
The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs	4
Influence of power ramps on the physical properties of AZO thin films deposited at room temperature by RF magnetron sputtering technique	4
Numerical optimization of hybrid 2D/3D and tandem perovskite/silicon HTJ solar cells, based on an experimentally validated MAPbI 3 cell: influence of	4
Atmospheric neutron-induced single event burnout characterization of 4.5 kV Si IGBTs with spallation neutron irradiation	4
High-performance AlGaN ultraviolet light-emitting diode with a tunnel junction based on inverted architecture	4
First demonstration of rapid deuterium annealing for interface trap reduction in HKMG MOSFETs	4
Anisotropic structural and optical properties of semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates	4
Failure mechanisms of the thyristor switch in pulsed arc electrohydraulic discharges	4
Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer	4
Review on fabrication and applications of GaN nanorods	4
Electrical properties of CuO/ZnO heterojunctions prepared by spray pyrolysis	4
Low thermal boundary resistance and reduced junction temperature in GaN HEMTs via AlN-mediated top-side diamond integration	4
Metallisation-associated degradation of silicon coated with thin dielectric layers	4
Through-silicon-via induced stress-aware FinFET buffer sizing in 3D ICs	4
Efficiency enhancement of triple absorber layer perovskite solar cells with the best materials for electron and hole transport layers: numerical study	4
Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A	4
A junctionless dual-gate MOSFET-based programmable inverter for secured hardware applications using nitride charge trapping	4
A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect	4
Enhanced photocatalytic degradation of methylene blue using DEA-modified TiO2 thin films	4
Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer	4
Strain engineering and strain measurement by spring tethers on suspended epitaxial GaN-on-Si photonic crystal devices	4
Modified photodiode equivalent circuit model considering coplanar waveguide electrodes	4
Studying the impact of intrinsic layer shape on the performance of p–i–n photodiodes in standard SiPh processes	4
Multi-stage infrared detectors	4
Over 1.2 GW cm−2 β-Ga2O3 SBD with V br of 1.93 kV realized by O2 plasma and annealing	4
TCAD analysis of SiC trench MOSFET structures with improved frequency figure of merit	4