Semiconductor Science and Technology

Papers
(The H4-Index of Semiconductor Science and Technology is 21. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)
ArticleCitations
GaN FinFETs and trigate devices for power and RF applications: review and perspective72
Next generation electronics on the ultrawide-bandgap aluminum nitride platform57
Recent progress in red light-emitting diodes by III-nitride materials51
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition45
Review on performance analysis of P3HT:PCBM-based bulk heterojunction organic solar cells43
High-detectivity ultraviolet-B photodetector based on SnO2 thin film/Si heterojunction39
Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies38
Dawn of nitride ferroelectric semiconductors: from materials to devices35
InP membrane integrated photonics research35
Exploring the exemplary structural, electronic, optical, and elastic nature of inorganic ternary cubic XBaF3 (X = Al and Tl) employing the accurate TB-mBJ approach31
Ferroelectric HfO2-based synaptic devices: recent trends and prospects30
60-GHz third-order on-chip bandpass filter using GaAs pHEMT technology30
Remarkably improved Curie temperature for two-dimensional CrI3 by gas molecular adsorption: a DFT study28
A 32 nm single-ended single-port 7T static random access memory for low power utilization25
Helical liquids in semiconductors25
Comparative performance analysis of mixed halide perovskite solar cells with different transport layers and back metal contacts25
Computational investigation on the photovoltaic performance of an efficient GeSe-based dual-heterojunction thin film solar cell25
Assessing the analog/RF and linearity performances of FinFET using high threshold voltage techniques23
Synaptic behaviour of TiO x /HfO2 RRAM enhanced by inserting ultrathin Al2O3 layer for neuromorphic computing22
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance *22
Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layers22
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