OOIR: Observatory of International Research

Papers

(The H4-Index of Semiconductor Science and Technology is 20. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-05-01 to 2026-05-01.)

Article	Citations
The effect of Si ion implantation on the electrical properties of InP thin film on Si(100) substrate fabricated by ion-cutting technique	109
Tunnel hole injection in unipolar HgCdTe-based laser diode	60
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate	57
Trench super junction power device by plasma doping: a structural, chemical-physical, and profiling investigation	45
The ab initio study of n-type nitrogen and gallium co-doped diamond	45
MISHEMT intrinsic voltage gain under multiple channel output characteristics	41
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity	41
A TCAD-based study on the design and performance of VOFET-based CMOS-like inverters	36
Low-power double-gate MoS₂ negative capacitance transistors with near-zero DIBL	32
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach	32
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications	31
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer	28
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices	27
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors	25
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD	22
The surface tension of Ga₂O₃ melt measured by a drop-weight method in an optical floating-zone furnace	22
Microscopic electroluminescence images of 850 nm oxide-confined VCSELs during burn-in	21
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor	20
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol.<	20
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance	20