Semiconductor Science and Technology

Papers
(The H4-Index of Semiconductor Science and Technology is 20. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-02-01 to 2025-02-01.)
ArticleCitations
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements72
Bidirectional threshold switching in Pt/Ag:Ni(OH)2/Pt structure69
Charge trapping and recovery in ALD HfO2/β-Ga2O3 (010) MOS capacitors51
Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography48
Electroforming free enhanced resistive switching in reduced graphene oxide films embedded with silver nanoparticles for nonvolatile memory applications42
A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD simulation study41
Study on a p-GaN HEMT with composite passivation and composite barrier layers38
Effect of rapid thermal annealing on DC performance of Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET38
Research on hybrid processing of silicon carbide based on laser cutting30
Tunnel hole injection in unipolar HgCdTe-based laser diode30
Impact of mercury vacancy states on Shockley–Read–Hall recombination in narrow gap HgCdTe28
First-Principles Study on the Physical Properties of Al-based Wide Bandgap Perovskites Cs3AlIxBr6-x for Optoelectronic Applications27
Energy spectrum of bilayer graphene with magnetic quantum structures studied using the Dirac equation25
Simple and direct estimation method for split-off hole effective mass from Franz–Keldysh oscillations appearing in photoreflectance spectra: a feasibility study using GaAs epitaxial layer structures a25
Electronic signal for mechanical failure in two-dimensional g-SiC25
Demonstration of p-GaN/AlGaN/GaN-based ultraviolet phototransistors with sub-saturated transfer characteristics24
Non-linear thermal resistance model for the simulation of high power GaN-based devices23
MISHEMT intrinsic voltage gain under multiple channel output characteristics22
Effect of the thermal stress on the defect evolution at GaAs/Si wafer bonding with a-Ge intermediate layer22
Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes21
Performance analysis and yield estimation for a negative capacitance field effect transistor-based eight-transistor static random access memory20
GaN based trigate HEMT with AlGaN back-barrier layer: proposal and investigation20
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