Semiconductor Science and Technology

Papers
(The H4-Index of Semiconductor Science and Technology is 22. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-05-01 to 2025-05-01.)
ArticleCitations
Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL64
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements61
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices58
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 35 1250144
The surface tension of Ga2O3 melt measured by a drop-weight method in an optical floating-zone furnace44
Transient analysis of graphene-based on-chip interconnects using closed-form MRA model38
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors31
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer31
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor30
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach30
The ab initio study of n-type nitrogen and gallium co-doped diamond30
Bidirectional threshold switching in Pt/Ag:Ni(OH)2/Pt structure29
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate29
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems27
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity27
Germanium thin film manufacturing using covalent bonding process26
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing26
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance25
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications25
Printed in-plane electrolyte-gated transistor based on zinc oxide25
An all-optical equalizer SWAP gate (ESG)24
Tunnel hole injection in unipolar HgCdTe-based laser diode24
Design and implementation of an inverter and its application in ring oscillator circuits using an organic-thin-film-transistor based on an FTM-derived channel22
MISHEMT intrinsic voltage gain under multiple channel output characteristics22
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET22
Modeling dislocation-related reverse bias leakage in GaN p–n diodes22
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD22
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