OOIR: Observatory of International Research

Papers

(The H4-Index of Semiconductor Science and Technology is 23. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-08-01 to 2025-08-01.)

Article	Citations
Low-power double-gate MoS₂ negative capacitance transistors with near-zero DIBL	78
The surface tension of Ga₂O₃ melt measured by a drop-weight method in an optical floating-zone furnace	66
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements	66
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 35 12501	47
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer	39
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach	35
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity	33
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate	33
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance	30
Germanium thin film manufacturing using covalent bonding process	30
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems	30
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications	29
Printed in-plane electrolyte-gated transistor based on zinc oxide	28
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices	28
Tunnel hole injection in unipolar HgCdTe-based laser diode	28
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET	27
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing	27
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor	26
Design and implementation of an inverter and its application in ring oscillator circuits using an organic-thin-film-transistor based on an FTM-derived channel	25
Electrical transport properties of highly doped N-type GaN materials	24
The ab initio study of n-type nitrogen and gallium co-doped diamond	23
MISHEMT intrinsic voltage gain under multiple channel output characteristics	23
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors	23