OOIR: Observatory of International Research

Papers

(The H4-Index of Semiconductor Science and Technology is 19. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-01-01 to 2026-01-01.)

Article	Citations
The effect of Si ion implantation on the electrical properties of InP thin film on Si(100) substrate fabricated by ion-cutting technique	95
Tunnel hole injection in unipolar HgCdTe-based laser diode	53
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance	49
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity	39
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems	39
A TCAD-based study on the design and performance of VOFET-based CMOS-like inverters	34
Low-power double-gate MoS₂ negative capacitance transistors with near-zero DIBL	33
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach	32
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing	29
Germanium thin film manufacturing using covalent bonding process	29
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications	29
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements	27
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 3	27
MISHEMT intrinsic voltage gain under multiple channel output characteristics	27
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate	26
The ab initio study of n-type nitrogen and gallium co-doped diamond	25
Trench super junction power device by plasma doping: a structural, chemical-physical, and profiling investigation	21
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices	20
Printed in-plane electrolyte-gated transistor based on zinc oxide	20
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET	19
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor	19