Semiconductor Science and Technology

Papers
(The H4-Index of Semiconductor Science and Technology is 20. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)
ArticleCitations
The effect of Si ion implantation on the electrical properties of InP thin film on Si(100) substrate fabricated by ion-cutting technique90
Tunnel hole injection in unipolar HgCdTe-based laser diode70
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer52
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor45
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance38
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity34
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems34
Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD33
Trench super junction power device by plasma doping: a structural, chemical-physical, and profiling investigation32
A TCAD-based study on the design and performance of VOFET-based CMOS-like inverters30
A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Reduced Power Loss and Saturation Current29
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 329
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements29
MISHEMT intrinsic voltage gain under multiple channel output characteristics28
The surface tension of Ga2O3 melt measured by a drop-weight method in an optical floating-zone furnace27
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate27
The ab initio study of n-type nitrogen and gallium co-doped diamond26
Demonstration of synaptic characteristics of polycrystalline-silicon ferroelectric thin-film transistor for application of neuromorphic computing25
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications24
Germanium thin film manufacturing using covalent bonding process23
Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL20
Quasi-analytical model of surface potential and drain current for trigate negative capacitance FinFET: a superposition approach20
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