Semiconductor Science and Technology

Papers
(The H4-Index of Semiconductor Science and Technology is 19. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)
ArticleCitations
The effect of Si ion implantation on the electrical properties of InP thin film on Si(100) substrate fabricated by ion-cutting technique117
Tunnel hole injection in unipolar HgCdTe-based laser diode66
Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate63
MISHEMT intrinsic voltage gain under multiple channel output characteristics52
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity50
A TCAD-based study on the design and performance of VOFET-based CMOS-like inverters49
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer44
Orbital-free approach for large-scale electrostatic simulations of quantum nanoelectronics devices37
Impact of deep and tail trap states on the electrical performance of double-gate ZnO thin film transistors36
The surface tension of Ga2O3 melt measured by a drop-weight method in an optical floating-zone furnace34
Microscopic electroluminescence images of 850 nm oxide-confined VCSELs during burn-in30
Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol.<27
III-V material-based junction-free L-shaped gate normal line tunneling FET for improved performance27
Performance investigation of a charge plasma tunnel FET with SiGe source pocket as a photosensor26
Role of temperature on linearity and analog/RF performance merits of a negative capacitance FinFET24
Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements23
A novel SiC superjunction trench MOSFET with integrated heterojunction diode for reduced power loss and saturation current21
The ab initio study of n-type nitrogen and gallium co-doped diamond20
First-principles study on the design and performance optimization of MoS ₂ - and SnS 2 -based RRAM20
Exploration and optimization of novel replacement and prefetching strategies for inefficiencies of advanced MRAM-based hybrid cache systems19
Trench super junction power device by plasma doping: a structural, chemical-physical, and profiling investigation19
Low-power double-gate MoS2 negative capacitance transistors with near-zero DIBL19
High ultraviolet stability red phosphorescent organic light-emitting diode based on fluorinated copper phthalocyanine interface modification19
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