Solid-State Electronics

Article	Citations
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function	51
An enzymatic glucose biosensor using the BESOI MOSFET	40
Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier	39
The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length	25
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation	22
Si nanowire-based micro-capacitors fabricated with metal assisted chemical etching for integrated energy storage applications	20
On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire MOSFETs with bulk source contact	20
Smart-CX – Method of extraction of parasitic capacitances in ICs	19
Non-local transport effects in semiconductors under low-field conditions	19
Tailoring the optoelectronic properties of PZT through the modulation of the thin film	18
Impedance sensors based on silicon-carbon films for detection low concentrations of organic vapors	18
Analog behavior of V-FET operating in forward and reverse mode	18
Editorial Board	18
Negative capacitance field-effect transistor with hetero-dielectric structure for suppression of reverse drain induced barrier lowering	18
Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content	17
Editorial Board	16
Compact I-V model for back-gated and double-gated TMD FETs	15
Engineering the contact resistance of copper/copper oxide via inserting a mediated molybdenum trioxide layer	15
A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier	15
Robustness of using degree of match in performing analog multiplication with spin-torque oscillators	14
Experimental study of thermal coupling effects in FD-SOI MOSFET	14
Editorial Board	13
Analysis of a Hall-Corbino disk plate having a point current source at the center	12
Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures	12
An ultra low power spiking neural encoder of microwave signals	12

Analytical model based estimation of line edge roughness induced V<	12
Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients	12
Novel Y-function methodology parameter estimation from weak to strong inversion operation	12
Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach	12
Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor	11
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors	11
Electron-phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS11
Impact of substrate resistivity on spiral inductors at mm-wave frequencies	10
28 nm FD-SOI MEOL parasitic capacitance segmentation using electrical testing and semiconductor process modeling	10
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing	10
Detailed low frequency noise assessment on GAA NW n-channel FETs	10
Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model	10
Ab initio study of electron mobility in V2	10
Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations	10
Editorial Board	10
An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges	10
Editorial Board	9
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise	9
Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors	9
Compact modeling of photonic devices in Verilog-A for integrated circuit design	9
Recovering the carrier number conservation in SPICE simulation of PIN diodes and IGBT devices	9
TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET	9
Editorial Board	9
In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets	9
Investigation and Modeling of Multifrequency CV characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures	9
A unified 2-D model for nanowire junctionless accumulation and inversion mode MOSFET in quasi-ballistic regime	9
Pragmatic OxRAM compact model ready to use for design studies	9
Editorial Board	9
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET	9
Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs	8
3D (micro/nano) CdO/p-Si co-doped Zn and La heterojunctions perform as solar light photodetectors	8
Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements	8
Design of a NMOS-triggered SCR for dual-direction low-voltage ESD protection	8
C-V measurement and modeling of double-BOX Trap-Rich SOI substrate	8
Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model	8
Impact of the leakage current of an AND-type synapse array on spiking neural networks	8
Self-similar reconfigurable low-pass MEMS filters using coplanar waveguide based on silicon	8
Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K	8
Graph-based Compact Modeling (GCM) of CMOS transistors for efficient parameter extraction: A machine learning approach	8
Corrigendum to “In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets” [Solid-State Electron. 201(2023) 10859]	8
TCAD-based design and verification of the components of a 200 V GaN-IC platform	8
The impact of electron phonon scattering on transport properties of topological insulators: A first principles quantum transport study	8
Double Reference Layer STT-MRAM Structures with Improved Performance	8
Hierarchical Mixture-of-Experts approach for neural compact modeling of MOSFETs	8
The core-shell junctionless MOSFET	8
On the noise-sensitivity of entangling quantum logic operations implemented with a semiconductor quantum dot platform	8
Equivalence of proton-induced displacement damage in InP-based HEMT	8
Performance potential of transistors based on tellurium nanowire arrays: A quantum transport study	8
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation	8
Stability and Vmin<	8

Simplified electrical modeling for dye sensitized solar cells: Influences of the blocking layer and chenodeoxycholic acid additive	8
Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate	7
Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance	7
TCAD numerical modeling of negative capacitance ferroelectric devices for radiation detection applications	7
Sensitivity enhancement in OCD metrology by optimizing azimuth angle based on the RCWA simulation	7
An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs	7
Sensitivity implications for programmable transistor based 1T-DRAM	7
Effects of electrode materials on solution-processed polyvinylidene fluoride-based piezoelectric nanogenerators: Do they matter?	7
Understanding negative capacitance physical mechanism in organic ferroelectric capacitor	7
A wireless stimulator system-on-chip with an optically writable ID for addressable cortical microimplants	7
Analysis of reverse voltage distribution of high-voltage diode stack considering effect of temperature	7
Theoretical study of extreme ultraviolet pellicles with nanometer thicknesses	7
Preparation and electrical characteristics of transparent thin film transistors with sputtered aluminum and phosphorus co-doped indium-zinc-oxide channel layer	7
A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage	7
Suppression of de-trapping by remanent polarization in dual-mechanism flash memory	7
Sensing performance of Ti/TiO2 nanosheets/Au capacitive device: Implication of resonant frequency	7
An eco-friendly bandgap engineering of semiconductor graphene oxide	7
Editorial Board	7
Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s	7
Combined effects of NH3 and NF3 post plasma treatment on the performance of spray coated ZnO thin film transistors	7
Palladium selenide as cathode for dye-sensitized solar cell: Effect of palladium content	7
Investigation of the anomalous effect of the AC-signal frequency on flat-band voltage of Al/HfO2/SiO2/Si structures	6
Editorial Board	6
Surrogate models for device design using sample-efficient Deep Learning	6
Building robust machine learning force fields by composite Gaussian approximation potentials	6
A compact physical expression for the static drain current in heterojunction barrier CNTFETs	6
Express method of electro-physical parameters extraction for power Schottky diodes	6
A multi-energy level agnostic approach for defect generation during TDDB stress	6
Editorial to Letters from SISPAD-2022	6
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K	6
Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications	6
Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures	6
Unified RTN and BTI statistical compact modeling from a defect-centric perspective	6
Bias stress stabilities of PMMA-passivated indium-gallium-zinc-oxide thin-film transistors after 100 °C steam exposure	6
Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices	6
Switching limits of top-gated carbon nanotube field-effect transistors	6
Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations	6
Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection	6
In-situ fluorine-doped ZnSnO thin film and thin-film transistor	6
Synaptic array using multi-level AND flash memory cells for hardware-based neural networks	6
Inversion layer electron mobility distribution in fully-depleted silicon-on-insulator MOSFETs	6
Sub micro-accelerometer based on spintronic technology: A design optimization	6
Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing	6
MoS2-based multiterminal ionic transistor with orientation-dependent STDP learning rules	6
Effect of Al2O3 on the operation of SiNX-based MIS RRAMs	5
Improving cell current in 3D NAND flash memory with fixed oxide charge	5
Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance	5
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation	5
Determination of source series resistances for InP HEMT under normal bias condition	5
Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices	5
Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application	5
Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions	5
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon	5
Modulation of ballistic injection velocity in phosphorene nanodevices by bias and confinement effects	5
Simulation of low frequency noise in buried-channel MOSFET by a Green’s function-based numerical trap level model	5
Editorial Board	5
A simulation methodology for superconducting qubit readout fidelity	5
Resistive Switching phenomenon in FD-SOI Ω-Gate FETs: Transistor performance recovery and back gate bias influence	5
Modeling electrical resistivity of CrSi thin films	5
Editorial Board	5
Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor	5
Competition between heating and cooling during dynamic self-heating degradation of amorphous InGaZnO thin-film transistors	5
Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge	5
1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications	5
Editorial. Special issue. EUROSOI-ULIS 2023	5
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging	5
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer	5
Preliminary results on industrial 28nm FD-SOI phase change memory at cryogenic temperature	5
Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures	5
A simple method for the photometric characterization of organic light-emitting diodes	5
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications	5
Perovskite-based optoelectronic artificial synaptic thin-film transistor	5
Analysis of back-gate bias impact on 22 nm FDSOI SRAM cell	5
Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region	5
Simulation study on physical parameters ruling unipolar resistance switching of sputter-deposited silicon oxide film on Si substrate	5
Investigation and optimization of traps properties in Al2O3/SiO2 dielectric stacks using conductance method	5
Impact of Gate Oxide Thickness on Flicker Noise (1/f) in PDSOI n-channel FETs	5
Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model	5
Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors	5
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs	5

Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression	5
Compact charge model for Si gate-all-around nMOSCAPs with cylindrical cross-sections considering the density-gradient equation	4
Interface effects in ultra-scaled MRAM cells	4
Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET	4
Analysis on effect of hot-carrier-induced degradation of NPT-IGBT	4
Strong quantization of current-carrying electron states in δ-layer s	4
Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures	4
Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application	4
Fabrication and modelling of MInM diodes with low turn-on voltage	4
Analysis and modeling of anomalous flicker noise in long channel halo MOSFETs	4
Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices	4
Impact of work function metal stacks on the performance and reliability of multi-V RMG CMOS technology	4
Design of auto-store circuit for nvSRAM with SONOS access transistor	4
Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films	4
Influence of gate-source/drain overlap on FeFETs	4
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions	4
An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs	4
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon	4
Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime	4
Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance	4
A composite model of memristors based on barrier and dopant drift mechanisms	4
A simulation physics-guided neural network for predicting semiconductor structure with few experimental data	4
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors	4
Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices	4
A novel methodology for neural compact modeling based on knowledge transfer	4
Negative capacitance enables GAA scaling VDD to 0.5 V	4
Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation	4
Quantum element method for multi-dimensional nanostructures enabled by a projection-based learning algorithm	4
Deep insights on new embedded resistance and gated diode on thin film silicon BIMOS device with and without external polysilicon resistance for advanced ESD protection in FD-SOI technology	4
Silicon nitride resistance switching MIS cells doped with silicon atoms	4
Editorial Board	4
Reliable parameter extraction method applied to an enhanced GaN HEMT small-signal model	4
Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables	4
Electron and spin transport in semiconductor and magnetoresistive devices	4
Hierarchical simulation of nanosheet field effect transistor: NESS flow	4
Improved inter-device variability in graphene liquid gate sensors by laser treatment	4
Deep spiking neural networks with integrate and fire neuron using steep switching device	4
Comprehensive evaluation of torques in ultra-scaled MRAM devices	4
Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations	4
Efficient atomistic simulations of lateral heterostructure devices with metal contacts	4
Improved self-heating extraction with RF technique at cryogenic temperatures	4
A differential OTP memory based highly unique and reliable PUF at 180 nm technology node	4
Si/Ge1−x	4
About electron transport and spin control in semiconductor devices	4
Evidence of trapping and electrothermal effects in vertical junctionless nanowire transistors	4
Corrigendum to “Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures” [Solid State Electron. 193 (2022) 108291]	4
Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs	4
Modeling current and voltage peaks generation in complementary resistive switching devices	4
Harnessing charge injection in Kelvin probe force microscopy for the evaluation of oxides	4
Analog resistive switching behavior in BiCoO3 thin film	4
Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint	4
High-densities of free holes in homoepitaxial n-GaN induced by fluorine-plasma ion implantation	4
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures	4
Impact of post metallization annealing (PMA) on the electrical properties of Ge nMOSFETs with ZrO2 dielectric	4
A well-conditioned surface potential equation for dynamically depleted SOI MOS devices accounting for the front-depletion/back-accumulation operation mode	4
Efficient circuit simulation of a memristive crossbar array with synaptic weight variability	4
Editorial Board	4
SPICE simulation of the time-dependent clustering model for dielectric breakdown	4
Effect of SOI substrate on silicon nitride resistance switching using MIS structure	4
Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion	4
GaN p-i-n ultraviolet photodetectors grown on homogenous GaN bulk substrates	4
Opportunity to achieve an efficient SiC/SiO2 interface N passivation by tuning the simultaneous oxidation modes during the SiC surface nitridation in N2 + O2 annealing	4
Role of temperature, MTJ size and pulse-width on STT-MRAM bit-error rate and backhopping	4
Enhancing the temporal response of modified porous silicon-based CO gas sensor	4