Solid-State Electronics

Papers
(The TQCC of Solid-State Electronics is 1. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-10-01 to 2025-10-01.)
ArticleCitations
Smart-CX – Method of extraction of parasitic capacitances in ICs71
Low power consumption of non-volatile memory device by tunneling process engineering51
Tailoring the optoelectronic properties of PZT through the modulation of the thin film26
Compact I-V model for back-gated and double-gated TMD FETs24
Impedance sensors based on silicon-carbon films for detection low concentrations of organic vapors22
Analog behavior of V-FET operating in forward and reverse mode21
Nanowire behavior under the influence of Polyoxometalates: A Comparative study of depletion and enhancement modes21
On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire MOSFETs with bulk source contact19
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function19
Negative capacitance field-effect transistor with hetero-dielectric structure for suppression of reverse drain induced barrier lowering18
The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length18
Si nanowire-based micro-capacitors fabricated with metal assisted chemical etching for integrated energy storage applications18
Editorial Board14
Engineering the contact resistance of copper/copper oxide via inserting a mediated molybdenum trioxide layer14
An enzymatic glucose biosensor using the BESOI MOSFET13
Editorial Board13
Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content13
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation12
A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier12
Non-local transport effects in semiconductors under low-field conditions12
Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier12
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors11
Experimental study of thermal coupling effects in FD-SOI MOSFET11
Novel Y-function methodology parameter estimation from weak to strong inversion operation11
An ultra low power spiking neural encoder of microwave signals10
Ab initio study of electron mobility in V210
An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges10
Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor10
Impact of substrate resistivity on spiral inductors at mm-wave frequencies10
Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients10
Electron-phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS10
Editorial Board10
Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures10
Analysis of a Hall-Corbino disk plate having a point current source at the center10
Analytical model based estimation of line edge roughness induced V<10
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing10
Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach10
Thermal coupling between FD-SOI FETs at cryogenic temperatures9
Evaluation of the effective channel length of Junctionless nanowire transistors with different drain bias through the gate capacitance9
Editorial Board9
3D (micro/nano) CdO/p-Si co-doped Zn and La heterojunctions perform as solar light photodetectors9
Equivalence of proton-induced displacement damage in InP-based HEMT9
The impact of electron phonon scattering on transport properties of topological insulators: A first principles quantum transport study8
Reactive sputtering deposited α-MoO3 thin films for forming-free resistive random-access memory8
Impact of the leakage current of an AND-type synapse array on spiking neural networks8
TCAD-based design and verification of the components of a 200 V GaN-IC platform8
Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements8
TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET8
Compact modeling of photonic devices in Verilog-A for integrated circuit design8
Stability and Vmin<8
Self-similar reconfigurable low-pass MEMS filters using coplanar waveguide based on silicon8
The core-shell junctionless MOSFET7
Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors7
Editorial Board7
On the noise-sensitivity of entangling quantum logic operations implemented with a semiconductor quantum dot platform7
Performance potential of transistors based on tellurium nanowire arrays: A quantum transport study7
C-V measurement and modeling of double-BOX Trap-Rich SOI substrate7
Editorial Board7
28 nm FD-SOI MEOL parasitic capacitance segmentation using electrical testing and semiconductor process modeling7
Hierarchical Mixture-of-Experts approach for neural compact modeling of MOSFETs7
Editorial Board7
Editorial Board6
Investigation and Modeling of Multifrequency CV characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures6
Pragmatic OxRAM compact model ready to use for design studies6
Graph-based Compact Modeling (GCM) of CMOS transistors for efficient parameter extraction: A machine learning approach6
Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model6
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise6
Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations6
Recovering the carrier number conservation in SPICE simulation of PIN diodes and IGBT devices6
A unified 2-D model for nanowire junctionless accumulation and inversion mode MOSFET in quasi-ballistic regime6
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET6
Design of a NMOS-triggered SCR for dual-direction low-voltage ESD protection6
In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets5
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation5
Suppression of de-trapping by remanent polarization in dual-mechanism flash memory5
Understanding negative capacitance physical mechanism in organic ferroelectric capacitor5
An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs5
Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model5
Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K5
Theoretical study of extreme ultraviolet pellicles with nanometer thicknesses5
Sensitivity implications for programmable transistor based 1T-DRAM5
A wireless stimulator system-on-chip with an optically writable ID for addressable cortical microimplants5
Impacts of trench angle on the performance of trench super-junction vertical double-diffused metal-oxide-semiconductor5
Double Reference Layer STT-MRAM Structures with Improved Performance5
Epitaxial p+pn+ vertical short diodes for microbolometers5
A multi-energy level agnostic approach for defect generation during TDDB stress5
TCAD numerical modeling of negative capacitance ferroelectric devices for radiation detection applications5
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K4
Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications4
Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance4
Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s4
Sensitivity enhancement in OCD metrology by optimizing azimuth angle based on the RCWA simulation4
Preparation and electrical characteristics of transparent thin film transistors with sputtered aluminum and phosphorus co-doped indium-zinc-oxide channel layer4
Investigation on the performance limits of Dirac-source FETs4
An eco-friendly bandgap engineering of semiconductor graphene oxide4
Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor4
Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations4
Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate4
Sensing performance of Ti/TiO2 nanosheets/Au capacitive device: Implication of resonant frequency4
Effects of electrode materials on solution-processed polyvinylidene fluoride-based piezoelectric nanogenerators: Do they matter?4
Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices4
A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage4
Editorial Board4
Combined effects of NH3 and NF3 post plasma treatment on the performance of spray coated ZnO thin film transistors4
MoS2-based multiterminal ionic transistor with orientation-dependent STDP learning rules4
Palladium selenide as cathode for dye-sensitized solar cell: Effect of palladium content4
Switching limits of top-gated carbon nanotube field-effect transistors4
Corrigendum to “In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets” [Solid-State Electron. 201(2023) 10859]4
Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing4
Sub micro-accelerometer based on spintronic technology: A design optimization3
Bias stress stabilities of PMMA-passivated indium-gallium-zinc-oxide thin-film transistors after 100 °C steam exposure3
In-situ fluorine-doped ZnSnO thin film and thin-film transistor3
Unified RTN and BTI statistical compact modeling from a defect-centric perspective3
Editorial Board3
Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures3
Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications3
Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection3
Editorial to Letters from SISPAD-20223
Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures3
Synaptic array using multi-level AND flash memory cells for hardware-based neural networks3
Resistive Switching phenomenon in FD-SOI Ω-Gate FETs: Transistor performance recovery and back gate bias influence3
Impact of Gate Oxide Thickness on Flicker Noise (1/f) in PDSOI n-channel FETs3
Preliminary results on industrial 28nm FD-SOI phase change memory at cryogenic temperature3
A simulation methodology for superconducting qubit readout fidelity3
A compact physical expression for the static drain current in heterojunction barrier CNTFETs3
Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression3
Building robust machine learning force fields by composite Gaussian approximation potentials3
Surrogate models for device design using sample-efficient Deep Learning3
Effect of Al2O3 on the operation of SiNX-based MIS RRAMs3
Achieving long-term and short-term synaptic plasticity in adaptive ANNs: A memristor circuit design with switchable dual-mode3
Express method of electro-physical parameters extraction for power Schottky diodes3
Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model2
Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge2
A simple method for the photometric characterization of organic light-emitting diodes2
Editorial. Special issue. EUROSOI-ULIS 20232
Simulation study on physical parameters ruling unipolar resistance switching of sputter-deposited silicon oxide film on Si substrate2
Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor2
Influence of temperature inhomogeneity and trap charge on current imbalance of SiC MOSFETs2
Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region2
Determination of source series resistances for InP HEMT under normal bias condition2
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging2
Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application2
Improving cell current in 3D NAND flash memory with fixed oxide charge2
Modeling electrical resistivity of CrSi thin films2
Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions2
Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures2
Analysis on effect of hot-carrier-induced degradation of NPT-IGBT2
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications2
Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors2
Simulation of low frequency noise in buried-channel MOSFET by a Green’s function-based numerical trap level model2
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon2
Investigating random discrete dopant-induced variability in cryogenic gate-all-around nanosheet FETs: A quantum transport simulation study2
1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications2
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs2
Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests2
Editorial Board2
Investigation and optimization of traps properties in Al2O3/SiO2 dielectric stacks using conductance method2
One-step variation included compact modeling with conditional variational autoencoder1
A simulation physics-guided neural network for predicting semiconductor structure with few experimental data1
An efficient temperature dependent compact model for nanosheet FET for neuromorphic computing circuit1
Modulation of ballistic injection velocity in phosphorene nanodevices by bias and confinement effects1
Effect of SOI substrate on silicon nitride resistance switching using MIS structure1
Improved self-heating extraction with RF technique at cryogenic temperatures1
Deep insights on new embedded resistance and gated diode on thin film silicon BIMOS device with and without external polysilicon resistance for advanced ESD protection in FD-SOI technology1
Opportunity to achieve an efficient SiC/SiO2 interface N passivation by tuning the simultaneous oxidation modes during the SiC surface nitridation in N2 + O2 annealing1
GaN p-i-n ultraviolet photodetectors grown on homogenous GaN bulk substrates1
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation1
Quantum element method for multi-dimensional nanostructures enabled by a projection-based learning algorithm1
Strong quantization of current-carrying electron states in δ-layer s1
Design of auto-store circuit for nvSRAM with SONOS access transistor1
Reliable parameter extraction method applied to an enhanced GaN HEMT small-signal model1
Editorial Board1
Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime1
Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs1
Corrigendum to “Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures” [Solid State Electron. 193 (2022) 108291]1
A composite model of memristors based on barrier and dopant drift mechanisms1
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon1
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures1
About electron transport and spin control in semiconductor devices1
Si/Ge1x1
Analysis of back-gate bias impact on 22 nm FDSOI SRAM cell1
Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance1
Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint1
Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices1
Hierarchical simulation of nanosheet field effect transistor: NESS flow1
An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs1
Interface effects in ultra-scaled MRAM cells1
Analog resistive switching behavior in BiCoO3 thin film1
Editorial Board1
A differential OTP memory based highly unique and reliable PUF at 180 nm technology node1
A well-conditioned surface potential equation for dynamically depleted SOI MOS devices accounting for the front-depletion/back-accumulation operation mode1
Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance1
Comprehensive evaluation of torques in ultra-scaled MRAM devices1
Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices1
Efficient atomistic simulations of lateral heterostructure devices with metal contacts1
Competition between heating and cooling during dynamic self-heating degradation of amorphous InGaZnO thin-film transistors1
Perovskite-based optoelectronic artificial synaptic thin-film transistor1
Fabrication and modelling of MInM diodes with low turn-on voltage1
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions1
Impact of post metallization annealing (PMA) on the electrical properties of Ge nMOSFETs with ZrO2 dielectric1
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