Solid-State Electronics

(The TQCC of Solid-State Electronics is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-07-01 to 2024-07-01.)
On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature46
Silicon photonics for terabit/s communication in data centers and exascale computers33
Reconfigurable field effect transistors: A technology enablers perspective30
20 Years of reconfigurable field-effect transistors: From concepts to future applications29
Trapping effects on AlGaN/GaN HEMT characteristics25
Tailoring PEDOT:PSS polymer electrode for solution-processed inverted organic solar cells20
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET19
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures18
Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions17
Leakage current mechanisms of groove-type tungsten-anode GaN SBDs with ultra low turn-ON voltage and low reverse current16
Compact modeling of 3D vertical junctionless gate-all-around silicon nanowire transistors towards 3D logic design16
Performance of pyrocatechol violet and carminic acid sensitized ZnO/CdS nanostructured photoactive materials for dye sensitized solar cell16
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer15
Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants15
Switching characteristic of fabricated nonvolatile bipolar resistive switching memory (ReRAM) using PEDOT: PSS/GO15
Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0.5Zr0.5O2 bilayer system15
Synthesis and characterization of ZnO nanoflowers by using simple spray pyrolysis technique14
Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications14
CMOS back-end-of-line compatible ferroelectric tunnel junction devices14
Origin of Incremental Step Pulse Programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash14
Phenol red based hybrid photodiode for optical detector applications14
Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature13
Barrier height tuning in Ti/4H-SiC Schottky diodes13
Effect of film thickness and temperature on the resistive switching characteristics of the Pt/HfO2/Al2O3/TiN structure13
A fast small signal modeling method for GaN HEMTs13
2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure13
Effects of La and Ni doping on ferroelectric and photocatalytic properties of Aurivillius Bi7Ti3Fe3O2112
High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications12
Comprehensive predictive modeling of resistive switching devices using a bias-dependent window function approach12
Effects of oxygen gas in the sputtering process of the WO3 sensing layer on NO2 sensing characteristics of the FET-type gas sensor12
Relaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM12
Carbon-based, all-inorganic, lead-free Ag2BiI5 rudorffite solar cells with high photovoltages12
A triboelectric nanogenerator based on white sugar for self-powered humidity sensor12
New challenges of printed high-к oxide dielectrics11
Contact resistance extraction of graphene FET technologies based on individual device characterization11
The thermoelectric-photoelectric integrated power generator and its design verification11
Small signal model and analog performance analysis of negative capacitance FETs11
Comparative study on performance of AlGaN/GaN MS-HEMTs with SiNx, SiOx, and SiNO surface passivation10
Life-time degradation of STT-MRAM by self-heating effect with TDDB model10
Dispersed and spherically assembled porous NiO nanosheets for low concentration ammonia gas sensing applications10
Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current10
Negative differential resistance in novel nanoscale devices10
Metal-organic framework (MOF)/reduced graphene oxide (rGO) composite for high performance CO sensor10
STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing9
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs9
Efficient compact modelling of UTC-photodiode towards terahertz communication system design9
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function9
Ruthenium doped Ge2Sb2Te5 nanomaterial as fast speed phase-change materials with good thermal stability9
On-chip adaptive matching learning with charge-trap synapse device and ReLU activation circuit9
Ab initio quantum transport simulations of monolayer GeS nanoribbons9
Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures9
SPICE modeling of cycle-to-cycle variability in RRAM devices9
Performance enhancement for AlGaN/GaN HEMTs with dual discrete field-plate9
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs9
Diamond Schottky p-i-n diodes for high power RF receiver protectors9
III-V-on-Si transistor technologies: Performance boosters and integration9
Fully vacuum-free large-area organic solar cell fabrication from polymer top electrode8
Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices8
Impact of nitridation on the active near-interface traps in gate oxides on 4H-SiC8
Assessing the Effect of Scaling High-Aspect-Ratio ISFET with Physical Model Interface for Nano-Biosensing Application8
Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN8
Correlation of natural honey-based RRAM processing and switching properties by experimental study and machine learning8
Impact of plasma induced damage on the fabrication of 3D NAND flash memory8
Modeling thermal effects in STT-MRAM8
Negative capacitance enables GAA scaling VDD to 0.5 V8
Ferroelectric FDSOI FET modeling for memory and logic applications8
MoS2-based multiterminal ionic transistor with orientation-dependent STDP learning rules8
Third-order intercepts and nonlinear distortion level investigation for pre and post multilayer pHEMTs8
Modeling source/drain lateral Gaussian doping profile of DG-MOSFET using Green’s function approach8
Evidence of ferroelectric HfO2 phase transformation induced by electric field cycling observed at a macroscopic scale7
CARAT – A reliability analysis framework for BTI-HCD aging in circuits7
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation7
A study of conductance update method for Ni/SiNx/Si analog synaptic device7
TCAD simulations of FDSOI devices down to deep cryogenic temperature7
TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz7
Highly-efficient OLED with cesium fluoride electron injection layer7
Bionic artificial synaptic floating gate transistor based on MXene7
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach7
Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique7
Simplified electrical modeling for dye sensitized solar cells: Influences of the blocking layer and chenodeoxycholic acid additive7
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices7
Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor7
A generalized EKV charge-based MOSFET model including oxide and interface traps7
Investigation of the anomalous hump phenomenon in amorphous InGaZnO thin-film transistors7
Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model7
Double Reference Layer STT-MRAM Structures with Improved Performance7
Effect of organic solvent vapor treatment on transistor performance and contact resistance of copper phthalocyanine based organic field-effect transistors7
SPICE compatible semi-empirical compact model for ferroelectric hysteresis7
Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs7
Effect of SOI substrate on silicon nitride resistance switching using MIS structure6
Channel width dependent subthreshold operation of tri-gate junctionless transistors6
Light-induced nonvolatile resistive switching in Cs0.15FA0.85PbI3-XBrX perovskite-based memristors6
Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application6
Engineering of metal-MoS2 contacts to overcome Fermi level pinning6
Simulation study of Fermi level depinning in metal-MoS2 contacts6
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices6
Electrical properties of MgO/GaN metal-oxide-semiconductor structures6
High performance InGaAs channel MOSFETs on highly resistive InAlAs buffer layers6
Performance variation of solution-processed memristor induced by different top electrode6
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors6
A simple method for the photometric characterization of organic light-emitting diodes6
Improved interface characteristics of Mo/4H-SiC schottky contact6
A low-power nanoelectromechanical (NEM) device with Al-doped HfO2-based ferroelectric capacitor6
Copper phthalocyanine buffer interlayer film incorporated in paper substrates for printed circuit boards and dielectric applications in flexible electronics6
Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate6
Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge6
Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs6
Single and triple insulator Metal-Insulator-Metal diodes for infrared rectennas6
Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance6
Channel mobility and contact resistance in scaled ZnO thin-film transistors6
Applicability of Sc2O3 versus Al2O3 in MIM rectifiers for IR rectenna6
Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes6
Crystalline insulators for scalable 2D nanoelectronics6
Combined effects of NH3 and NF3 post plasma treatment on the performance of spray coated ZnO thin film transistors6
Performances of perovskite solar cells at low-intensity light irradiation6
Study of RTN signals in resistive switching devices based on neural networks6
Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures6
Investigation of electrical characteristics of flexible CMOS devices fabricated with thickness-controlled spalling process5
Custom measurement system for memristor characterisation5
Architecture optimization of SPAD integrated in 28 nm FD-SOI CMOS technology to reduce the DCR5
Breaking the subthreshold slope limit in MOSFETs5
Enhancing the temporal response of modified porous silicon-based CO gas sensor5
Impact of the transition region between active area and edge termination on electrical performance of SiC MOSFET5
Parasitic oscillation in the low-frequency noise characterization of solar cells5
Temperature increase in STT-MRAM at writing: A fully three-dimensional finite element approach5
Poly(V3D3), an iCVD polymer with promising dielectric properties for high voltage capacitors5
Performance of FDSOI double-gate dual-doped reconfigurable FETs5
Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model5
Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors5
Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies5
Analog performance of GaN/AlGaN high-electron-mobility transistors5
An integrate-and-fire neuron with capacitive trans-impedance amplifier for improving linearity in Spiking Neural Networks5
Harnessing the unique features of FDSOI CMOS technology in fibreoptic, millimetre-wave, and quantum computing circuits from 2 K to 400 K5
Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs5
Pragmatic Z2-FET compact model including DC and 1T-DRAM memory operation5
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors5
Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures5
Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions5
Palladium selenide as cathode for dye-sensitized solar cell: Effect of palladium content5
Thermometric SOI lateral diodes for bolometric application: Comparison between Schottky and p-i-n diodes5
Surface modification of the TiO2/g-CN core-shell nanostructure with bimetallic NiMoO4 nanosheets for the improved photoelectrochemical water oxidation5
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C5
On the charge transport mechanisms in Ge-rich GeSbTe alloys5
Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations5
Structure evolution and charge hysteresis in buried Hafnia-Alumina oxides5
Ion implantation of aluminum in 4H-SiC epilayers from 90 keV to above 1 MeV5
A modified finite difference model to the reverse recovery of silicon PIN diodes5
Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations5
Influence of variability on the performance of HfO2 memristor-based convolutional neural networks5
Thickness dependence of dielectric properties in sub-nanometric Al2O3/ZnO laminates5
Enhanced statistical detection of random telegraph noise in frequency and time domain5
Stochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration5
Cryogenic characteristics of UTBB SOI Schottky-Barrier MOSFETs5
High-power electro-mechanical behavior of a capacitive microwave power sensor with warped cantilever beam5
Piezoelectric microsensor for selective detection of low concentrations of ammonia5
Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments4
Thin-film transistor accumulation-mode modeling4
A novel methodology for neural compact modeling based on knowledge transfer4
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications4
Continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs4
Barium titanate nanorods on micro-machined silicon substrate for performance enhancement of piezoelectric Nanogenerators (NGs)4
Influence of interface traps density and temperature variation on the NBTI effect in p-Type junctionless nanowire transistors4
Assessment of paper-based MoS2 FET for Physically Unclonable Functions4
Drift of the sensitive direction of Hall-effect devices in (1 0 0)-silicon caused by mechanical shear stress4
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions4
Robust cryogenic ab-initio quantum transport simulation for LG = 10 nm nanowire4
Hierarchical modeling for TCAD simulation of short-channel 2D material-based FETs4
Exploiting the KPFM capabilities to analyze at the nanoscale the impact of electrical stresses on OTFTs properties4
Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation4
Mobility degradation in 4H-SiC MOSFETs and interfacial formation of carbon clusters4
Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design4
A dynamic current hysteresis model for IGZO-TFT4
Low-temperature deuterium annealing to improve performance and reliability in a MOSFET4
On noise-induced transient bit flips in subthreshold SRAM4
Superiority of core–shell junctionless FETs4
Structural design and experimental analysis for AlN Lamb-wave resonators with different electrical boundary conditions4
Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K4
Stability of zinc nitride thin-film transistors under positive and negative bias stress4
Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures4
Demonstration of integrate-and-fire neuron circuit for spiking neural networks4
Phase-change memory electro-thermal analysis and engineering thanks to enhanced thermal confinement4
The core-shell junctionless MOSFET4
PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin AlGaN barrier4
Ab initio study of electron mobility in V24
A simple test structure for the electrical characterization of front and back channels for advanced SOI technology development4
Physical parameters based analytical I-V model of long and short channel a-IGZO TFTs4
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines4
Investigating interface states and oxide traps in the MoS2/oxide/Si system4
Design of RRAM with high storage capacity and high reliability for IoT applications4
Degradation study of carrier selective contact silicon solar cells with ageing: Role of silicon surface morphology4
Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme4
Demonstration and characterization of 500 V MIM capacitor with Al2O3 dielectric layer for power integrated circuits4
A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier4
All inorganic and transparent ITO/boehmite/ITO structure by one-step synthesis method for flexible memristor4
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging4
Modeling of forward gate leakage current for normally off pGaN/AlGaN/GaN HEMTs4
Cryogenic characterization and modeling of a CMOS floating-gate device for quantum control hardware4
The mechanism of defects effect on carrier transport by employing multi-wavelength sub-bandgap lights on CdZnTe crystal4
Image-force barrier lowering in top- and side-contacted two-dimensional materials4
Finite element modeling of spin–orbit torques4
A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures4
Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices4
Modeling OFF-state harmonics in MOS transistors used as RF switches4
Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection4
Efficient atomistic simulations of lateral heterostructure devices with metal contacts4
A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage4
Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs4
Channel doping effects in negative capacitance field-effect transistors4
Heat sink implementation in back-end of line for self-heating reduction in 22 nm FDSOI MOSFETs4