Solid-State Electronics

Article	Citations
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function	68
An enzymatic glucose biosensor using the BESOI MOSFET	51
Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier	26
The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length	24
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation	23
Si nanowire-based micro-capacitors fabricated with metal assisted chemical etching for integrated energy storage applications	23
Non-local transport effects in semiconductors under low-field conditions	21
Low power consumption of non-volatile memory device by tunneling process engineering	20
Smart-CX – Method of extraction of parasitic capacitances in ICs	20
Tailoring the optoelectronic properties of PZT through the modulation of the thin film	19
Editorial Board	19
Editorial Board	19
Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content	19
Engineering the contact resistance of copper/copper oxide via inserting a mediated molybdenum trioxide layer	19
Analog behavior of V-FET operating in forward and reverse mode	18
A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier	18
Compact I-V model for back-gated and double-gated TMD FETs	18
Experimental study of thermal coupling effects in FD-SOI MOSFET	16
Impedance sensors based on silicon-carbon films for detection low concentrations of organic vapors	14
Negative capacitance field-effect transistor with hetero-dielectric structure for suppression of reverse drain induced barrier lowering	14
On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire MOSFETs with bulk source contact	14
Analytical model based estimation of line edge roughness induced V<	13
Editorial Board	13
Robustness of using degree of match in performing analog multiplication with spin-torque oscillators	13
Novel Y-function methodology parameter estimation from weak to strong inversion operation	13

Ab initio study of electron mobility in V2	13
Analysis of a Hall-Corbino disk plate having a point current source at the center	13
An ultra low power spiking neural encoder of microwave signals	12
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing	12
Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor	12
Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach	12
Electron-phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS12
Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures	12
Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients	12
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors	12
Impact of substrate resistivity on spiral inductors at mm-wave frequencies	12
TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET	11
Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model	11
Editorial Board	11
An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges	11
28 nm FD-SOI MEOL parasitic capacitance segmentation using electrical testing and semiconductor process modeling	11
Pragmatic OxRAM compact model ready to use for design studies	11
Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations	11
Editorial Board	11
A unified 2-D model for nanowire junctionless accumulation and inversion mode MOSFET in quasi-ballistic regime	10
Investigation and Modeling of Multifrequency CV characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures	10
Self-similar reconfigurable low-pass MEMS filters using coplanar waveguide based on silicon	10
Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors	10
Editorial Board	10
C-V measurement and modeling of double-BOX Trap-Rich SOI substrate	10
Impact of the leakage current of an AND-type synapse array on spiking neural networks	10
Modeling of the degradation of CMOS inverters under pulsed stress conditions from ‘on-the-fly’ measurements	10
Editorial Board	10
In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets	10
Double Reference Layer STT-MRAM Structures with Improved Performance	10
On the noise-sensitivity of entangling quantum logic operations implemented with a semiconductor quantum dot platform	10
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation	9
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise	9
Compact modeling of photonic devices in Verilog-A for integrated circuit design	9
Performance potential of transistors based on tellurium nanowire arrays: A quantum transport study	9
Reactive sputtering deposited α-MoO3 thin films for forming-free resistive random-access memory	9
Equivalence of proton-induced displacement damage in InP-based HEMT	9
Editorial Board	9
The impact of electron phonon scattering on transport properties of topological insulators: A first principles quantum transport study	9
Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model	9
TCAD-based design and verification of the components of a 200 V GaN-IC platform	9
Graph-based Compact Modeling (GCM) of CMOS transistors for efficient parameter extraction: A machine learning approach	9
Thermal coupling between FD-SOI FETs at cryogenic temperatures	9
Stability and Vmin<	9
The core-shell junctionless MOSFET	9
Suppression of de-trapping by remanent polarization in dual-mechanism flash memory	8
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET	8
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K	8
A wireless stimulator system-on-chip with an optically writable ID for addressable cortical microimplants	8
Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance	8

Preparation and electrical characteristics of transparent thin film transistors with sputtered aluminum and phosphorus co-doped indium-zinc-oxide channel layer	8
Corrigendum to “In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets” [Solid-State Electron. 201(2023) 10859]	8
Hierarchical Mixture-of-Experts approach for neural compact modeling of MOSFETs	8
Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K	8
Design of a NMOS-triggered SCR for dual-direction low-voltage ESD protection	8
Understanding negative capacitance physical mechanism in organic ferroelectric capacitor	8
Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s	8
A multi-energy level agnostic approach for defect generation during TDDB stress	8
3D (micro/nano) CdO/p-Si co-doped Zn and La heterojunctions perform as solar light photodetectors	8
Recovering the carrier number conservation in SPICE simulation of PIN diodes and IGBT devices	8
Editorial Board	8
Sensitivity implications for programmable transistor based 1T-DRAM	8
Switching limits of top-gated carbon nanotube field-effect transistors	8
An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs	8
Impacts of trench angle on the performance of trench super-junction vertical double-diffused metal-oxide-semiconductor	8
A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage	7
Sensing performance of Ti/TiO2 nanosheets/Au capacitive device: Implication of resonant frequency	7
Combined effects of NH3 and NF3 post plasma treatment on the performance of spray coated ZnO thin film transistors	7
Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing	7
Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications	7
Editorial to Letters from SISPAD-2022	7
Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection	7
Building robust machine learning force fields by composite Gaussian approximation potentials	7
Effects of electrode materials on solution-processed polyvinylidene fluoride-based piezoelectric nanogenerators: Do they matter?	7
Theoretical study of extreme ultraviolet pellicles with nanometer thicknesses	7
Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices	7
An eco-friendly bandgap engineering of semiconductor graphene oxide	7
Non-uniform matching performances in mesa-isolated SOI MOSFETs	7
Express method of electro-physical parameters extraction for power Schottky diodes	7
Investigation of the anomalous effect of the AC-signal frequency on flat-band voltage of Al/HfO2/SiO2/Si structures	7
Inversion layer electron mobility distribution in fully-depleted silicon-on-insulator MOSFETs	7
Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations	7
Sensitivity enhancement in OCD metrology by optimizing azimuth angle based on the RCWA simulation	7
TCAD numerical modeling of negative capacitance ferroelectric devices for radiation detection applications	7
MoS2-based multiterminal ionic transistor with orientation-dependent STDP learning rules	7
Palladium selenide as cathode for dye-sensitized solar cell: Effect of palladium content	7
Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate	7
Bias stress stabilities of PMMA-passivated indium-gallium-zinc-oxide thin-film transistors after 100 °C steam exposure	7
A compact physical expression for the static drain current in heterojunction barrier CNTFETs	7
Unified RTN and BTI statistical compact modeling from a defect-centric perspective	7
A simple method for the photometric characterization of organic light-emitting diodes	6
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs	6
Simulation of low frequency noise in buried-channel MOSFET by a Green’s function-based numerical trap level model	6
Resistive Switching phenomenon in FD-SOI Ω-Gate FETs: Transistor performance recovery and back gate bias influence	6
Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression	6
Editorial Board	6
Synaptic array using multi-level AND flash memory cells for hardware-based neural networks	6
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon	6
Impact of Gate Oxide Thickness on Flicker Noise (1/f) in PDSOI n-channel FETs	6
Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge	6
Investigating random discrete dopant-induced variability in cryogenic gate-all-around nanosheet FETs: A quantum transport simulation study	6
Editorial. Special issue. EUROSOI-ULIS 2023	6
Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors	6
Editorial Board	6
Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures	6
Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures	6
In-situ fluorine-doped ZnSnO thin film and thin-film transistor	6
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging	6
Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications	6
Improving cell current in 3D NAND flash memory with fixed oxide charge	6
Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions	6
1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications	6
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications	6
Effect of Al2O3 on the operation of SiNX-based MIS RRAMs	6
A simulation methodology for superconducting qubit readout fidelity	6
Sub micro-accelerometer based on spintronic technology: A design optimization	6
Simulation study on physical parameters ruling unipolar resistance switching of sputter-deposited silicon oxide film on Si substrate	6
Boosting the electrical performance of solar cells by using PIN diode structure with different layout styles controlled by MOS capacitor	6
Surrogate models for device design using sample-efficient Deep Learning	6
Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor	6
Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application	6
Modeling electrical resistivity of CrSi thin films	6
Investigation and optimization of traps properties in Al2O3/SiO2 dielectric stacks using conductance method	6
Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model	6
Corrigendum to “Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures” [Solid State Electron. 193 (2022) 108291]	5
Fabrication and modelling of MInM diodes with low turn-on voltage	5
A differential OTP memory based highly unique and reliable PUF at 180 nm technology node	5
Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region	5
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon	5
Editorial Board	5

On the role of power dissipation in the Post-BD behavior of FDSOI NanoWire FETs	5
Reliable parameter extraction method applied to an enhanced GaN HEMT small-signal model	5
Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance	5
Impact of post metallization annealing (PMA) on the electrical properties of Ge nMOSFETs with ZrO2 dielectric	5
Analog resistive switching behavior in BiCoO3 thin film	5
An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs	5
Analysis of back-gate bias impact on 22 nm FDSOI SRAM cell	5
Comprehensive evaluation of torques in ultra-scaled MRAM devices	5
Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance	5
Efficient atomistic simulations of lateral heterostructure devices with metal contacts	5
Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices	5
Modeling current and voltage peaks generation in complementary resistive switching devices	5
Strong quantization of current-carrying electron states in δ-layer s	5
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation	5
Perovskite-based optoelectronic artificial synaptic thin-film transistor	5
Analysis on effect of hot-carrier-induced degradation of NPT-IGBT	5
Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime	5
Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application	5
Design of auto-store circuit for nvSRAM with SONOS access transistor	5
Influence of temperature inhomogeneity and trap charge on current imbalance of SiC MOSFETs	5
GaN p-i-n ultraviolet photodetectors grown on homogenous GaN bulk substrates	5
Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests	5
Harnessing charge injection in Kelvin probe force microscopy for the evaluation of oxides	5
Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices	5
Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint	5
Opportunity to achieve an efficient SiC/SiO2 interface N passivation by tuning the simultaneous oxidation modes during the SiC surface nitridation in N2 + O2 annealing	5
Effect of SOI substrate on silicon nitride resistance switching using MIS structure	5
Editorial Board	5
Interface effects in ultra-scaled MRAM cells	5
Quantum element method for multi-dimensional nanostructures enabled by a projection-based learning algorithm	5
Competition between heating and cooling during dynamic self-heating degradation of amorphous InGaZnO thin-film transistors	5
Determination of source series resistances for InP HEMT under normal bias condition	5
About electron transport and spin control in semiconductor devices	5
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions	5
Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables	5
Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation	5
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures	5
Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures	5
Deep insights on new embedded resistance and gated diode on thin film silicon BIMOS device with and without external polysilicon resistance for advanced ESD protection in FD-SOI technology	5
Modulation of ballistic injection velocity in phosphorene nanodevices by bias and confinement effects	5
One-step variation included compact modeling with conditional variational autoencoder	5
Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor	5
Editorial Board	5
A simulation physics-guided neural network for predicting semiconductor structure with few experimental data	5
Hierarchical simulation of nanosheet field effect transistor: NESS flow	5
Improved self-heating extraction with RF technique at cryogenic temperatures	5
Si/Ge1−x	4
Investigation of effects of lateral boundary conditions on current filament movements in Trench-Gate IGBTs	4
Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations	4
Editorial Board	4
SPICE simulation of the time-dependent clustering model for dielectric breakdown	4
Pinning voltage model of vertical pinned photodiode for Dual-Pixel image sensor	4
Role of temperature, MTJ size and pulse-width on STT-MRAM bit-error rate and backhopping	4
Analysis of 1/f and G–R noise in Phosphorene FETs	4
The study on influence factors of contact properties of metal-MoS2 interfaces	4
Novel Y-function based strategy for parameter extraction in S/D asymmetric architecture devices and low frequency noise characterization in GAA Si VNW pMOSFETs	4
Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO2/W memristors	4
Multi-state tunnel field effect transistor based on face tunneling with gate-source overlap	4
Interface traps density extraction through transient measurements in junctionless transistors	4
Study of ISFET for KCl sensing	4
Crystalline insulators for scalable 2D nanoelectronics	4
Fine-tuning Cesium lead chloride perovskite field-effect transistors for sensing applications: Bridging numerical modeling and experimental validation	4
DC and low a frequency noise analysis of p channel gate all around vertically stacked silicon nanosheets	4
Silicon nitride resistance switching MIS cells doped with silicon atoms	4
Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices	4
A composite model of memristors based on barrier and dopant drift mechanisms	4
Structural distortion in ferroelectric HfO2 – The factor that determines electric field-induced phase transformation	4
Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET	4
Evidence of Transport Degradation in 22 nm FD-SOI Charge Trapping Transistors for Neural Network Applications	4
Evidence of trapping and electrothermal effects in vertical junctionless nanowire transistors	4
Stress management in freestanding membranes obtained by ion implantation induced delamination	4
A well-conditioned surface potential equation for dynamically depleted SOI MOS devices accounting for the front-depletion/back-accumulation operation mode	4
Performance of FDSOI double-gate dual-doped reconfigurable FETs	4
High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications	4
Switching characteristic of fabricated nonvolatile bipolar resistive switching memory (ReRAM) using PEDOT: PSS/GO	4
Improved interface characteristics of Mo/4H-SiC schottky contact	4
Effects of oxygen gas in the sputtering process of the WO3 sensing layer on NO2 sensing characteristics of the FET-type gas sensor	4
Improvement of instrumentation consistency using DUV filter in Spectroscopic Ellipsometry	4
Influence of gate-source/drain overlap on FeFETs	4
Analog characteristics of n-type vertically stacked nanowires	4
Efficient circuit simulation of a memristive crossbar array with synaptic weight variability	4
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach	4
Deep spiking neural networks with integrate and fire neuron using steep switching device	4
Interconnect effects on thermal resistance of CMOS-SOI transistors in microwave power integrated circuits	4
Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion	4
Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic	4
Improved inter-device variability in graphene liquid gate sensors by laser treatment	4
Impact of work function metal stacks on the performance and reliability of multi-V RMG CMOS technology	4
Electron and spin transport in semiconductor and magnetoresistive devices	4
A dynamic current hysteresis model for IGZO-TFT	4
Pseudo-MOSFET transient behavior: Experiments, model, substrate and temperature effect	4
Discontinuous Galerkin concept for Quantum-Liouville type equations	4
Editorial Board	4
Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K	4
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors	4