Solid-State Electronics

Article	Citations
Tailoring the optoelectronic properties of PZT through the modulation of the thin film	75
Smart-CX – Method of extraction of parasitic capacitances in ICs	52
The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length	28
Negative capacitance field-effect transistor with hetero-dielectric structure for suppression of reverse drain induced barrier lowering	25
An enzymatic glucose biosensor using the BESOI MOSFET	25
Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content	24
Numerical investigation of effect of Si separator in bottom dielectric isolation forksheet FETs via in-house TCAD process emulator and device simulator	23
3xVDD-tolerant power-rail ESD clamp circuit for negative mixed-voltage interfaces	22
Si nanowire-based micro-capacitors fabricated with metal assisted chemical etching for integrated energy storage applications	21
Engineering the contact resistance of copper/copper oxide via inserting a mediated molybdenum trioxide layer	21
Editorial Board	20
Non-local transport effects in semiconductors under low-field conditions	19
Editorial Board	19
Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier	18
Experimental study of thermal coupling effects in FD-SOI MOSFET	18
A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier	18
Low power consumption of non-volatile memory device by tunneling process engineering	17
Nanowire behavior under the influence of Polyoxometalates: A Comparative study of depletion and enhancement modes	16
On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire MOSFETs with bulk source contact	16
Extraction of trap densities in Al:HfO	15
Analog behavior of V-FET operating in forward and reverse mode	14
Compact I-V model for back-gated and double-gated TMD FETs	14
Analysis of a Hall-Corbino disk plate having a point current source at the center	13
Impedance sensors based on silicon-carbon films for detection low concentrations of organic vapors	13
Editorial Board	13

Modeling of tunneling through Schottky barriers	13
An ultra low power spiking neural encoder of microwave signals	12
Impact of substrate resistivity on spiral inductors at mm-wave frequencies	12
Mechanisms of negative bias instability of commercial SiC MOSFETs observed by current transients	12
Self-aligned nitrogen doping via plasma treatment of NiO/β-Ga2O3 heterojunction diodes	12
Spatially resolved ionization current measurements using an active-matrix transimpedance amplifier array	12
Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach	12
Analytical model based estimation of line edge roughness induced V<	12
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing	12
Study of RRAM devices with PECVD silicon-oxide resistive switching layer	11
Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor	11
Novel Y-function methodology parameter estimation from weak to strong inversion operation	11
Temperature-dependence of current gain and turn-on voltages of GaAs-based HBTs with different base layers grown by MOCVD	11
An implicit analytical surface potential based model for long channel symmetric double-gate MOSFETs accounting for oxide and interface trapped charges	11
Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures	11
3D (micro/nano) CdO/p-Si co-doped Zn and La heterojunctions perform as solar light photodetectors	11
Ab initio study of electron mobility in V2	11
Electron-phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS11
Estimation of the energy levels of the donor–acceptor polymers of organic solar cells using cyclic voltammetry	11
Hierarchical Mixture-of-Experts approach for neural compact modeling of MOSFETs	10
Editorial Board	10
Self-similar reconfigurable low-pass MEMS filters using coplanar waveguide based on silicon	10
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise	10
Double Reference Layer STT-MRAM Structures with Improved Performance	10
Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations	10
Thermal coupling between FD-SOI FETs at cryogenic temperatures	10
Investigation and Modeling of Multifrequency CV characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures	10
Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K	10
Editorial Board	10
Editorial Board	9
Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors	9
In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets	9
Editorial Board	9
Editorial Board	9
On the noise-sensitivity of entangling quantum logic operations implemented with a semiconductor quantum dot platform	9
Pragmatic OxRAM compact model ready to use for design studies	9
TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET	9
28 nm FD-SOI MEOL parasitic capacitance segmentation using electrical testing and semiconductor process modeling	9
A unified 2-D model for nanowire junctionless accumulation and inversion mode MOSFET in quasi-ballistic regime	9
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET	9
Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s	8
Graph-based Compact Modeling (GCM) of CMOS transistors for efficient parameter extraction: A machine learning approach	8
Reactive sputtering deposited α-MoO3 thin films for forming-free resistive random-access memory	8
Impact of the leakage current of an AND-type synapse array on spiking neural networks	8
Performance potential of transistors based on tellurium nanowire arrays: A quantum transport study	8
Design of a NMOS-triggered SCR for dual-direction low-voltage ESD protection	8
Equivalence of proton-induced displacement damage in InP-based HEMT	8
Temperature influence on analog parameters of vertical nanowire transistors	8
C-V measurement and modeling of double-BOX Trap-Rich SOI substrate	8
The core-shell junctionless MOSFET	8

Recovering the carrier number conservation in SPICE simulation of PIN diodes and IGBT devices	8
Compact modeling of photonic devices in Verilog-A for integrated circuit design	8
Evidence of out-of-equilibrium body potential in undoped EZ-FET	8
Evaluation of the effective channel length of Junctionless nanowire transistors with different drain bias through the gate capacitance	8
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation	8
Theoretical study of extreme ultraviolet pellicles with nanometer thicknesses	8
Epitaxial p+pn+ vertical short diodes for microbolometers	8
Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model	8
The impact of electron phonon scattering on transport properties of topological insulators: A first principles quantum transport study	8
A wireless stimulator system-on-chip with an optically writable ID for addressable cortical microimplants	8
TCAD-based design and verification of the components of a 200 V GaN-IC platform	8
Impacts of trench angle on the performance of trench super-junction vertical double-diffused metal-oxide-semiconductor	8
Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices	7
Non-uniform matching performances in mesa-isolated SOI MOSFETs	7
Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations	7
Preparation and electrical characteristics of transparent thin film transistors with sputtered aluminum and phosphorus co-doped indium-zinc-oxide channel layer	7
Understanding negative capacitance physical mechanism in organic ferroelectric capacitor	7
Palladium selenide as cathode for dye-sensitized solar cell: Effect of palladium content	7
Sensitivity enhancement in OCD metrology by optimizing azimuth angle based on the RCWA simulation	7
Effects of electrode materials on solution-processed polyvinylidene fluoride-based piezoelectric nanogenerators: Do they matter?	7
Model of threshold voltage and drain current in core-shell junctionless transistor on FD-SOI	7
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K	7
Corrigendum to “In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets” [Solid-State Electron. 201(2023) 10859]	7
Combined effects of NH3 and NF3 post plasma treatment on the performance of spray coated ZnO thin film transistors	7
Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications	7
Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance	7
Switching limits of top-gated carbon nanotube field-effect transistors	7
Sensitivity implications for programmable transistor based 1T-DRAM	7
Behavioral SPICE model for memristive crosspoint arrays operating in the nonlinear transport regime	7
Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing	7
Silicon nanowire field-effect transistor biosensors with bowtie antenna	7
Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate	7
Suppression of de-trapping by remanent polarization in dual-mechanism flash memory	7
Sensing performance of Ti/TiO2 nanosheets/Au capacitive device: Implication of resonant frequency	7
An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs	7
A multi-energy level agnostic approach for defect generation during TDDB stress	7
Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression	6
In-situ fluorine-doped ZnSnO thin film and thin-film transistor	6
A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage	6
MoS2-based multiterminal ionic transistor with orientation-dependent STDP learning rules	6
Editorial to Letters from SISPAD-2022	6
Achieving long-term and short-term synaptic plasticity in adaptive ANNs: A memristor circuit design with switchable dual-mode	6
Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application	6
Editorial Board	6
Effect of Al2O3 on the operation of SiNX-based MIS RRAMs	6
Influence of N-type substrate’s bias potential on electrical characteristics of 4H-SiC integrated devices for All-SiC ICs	6
Sub micro-accelerometer based on spintronic technology: A design optimization	6
Boosting the electrical performance of solar cells by using PIN diode structure with different layout styles controlled by MOS capacitor	6
Synaptic array using multi-level AND flash memory cells for hardware-based neural networks	6
Express method of electro-physical parameters extraction for power Schottky diodes	6
Surrogate models for device design using sample-efficient Deep Learning	6
An eco-friendly bandgap engineering of semiconductor graphene oxide	6
A simulation methodology for superconducting qubit readout fidelity	6
Quantum simulations of MoS2 field effect transistors including contact effects	6
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon	6
Editorial. Special issue. EUROSOI-ULIS 2023	6
Investigating random discrete dopant-induced variability in cryogenic gate-all-around nanosheet FETs: A quantum transport simulation study	6
Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection	6
Bias stress stabilities of PMMA-passivated indium-gallium-zinc-oxide thin-film transistors after 100 °C steam exposure	6
Building robust machine learning force fields by composite Gaussian approximation potentials	6
Preliminary results on industrial 28nm FD-SOI phase change memory at cryogenic temperature	6
A compact physical expression for the static drain current in heterojunction barrier CNTFETs	6
Editorial Board	6
TCAD numerical modeling of negative capacitance ferroelectric devices for radiation detection applications	6
Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures	6
Resistive Switching phenomenon in FD-SOI Ω-Gate FETs: Transistor performance recovery and back gate bias influence	6
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications	6
Impact of Gate Oxide Thickness on Flicker Noise (1/f) in PDSOI n-channel FETs	6
Investigation of reconfigurable logic gate using integrated amorphous InGaZnO ReRAM and thin-film transistor	6
Investigation on the performance limits of Dirac-source FETs	6
A simple method for the photometric characterization of organic light-emitting diodes	5
Improving cell current in 3D NAND flash memory with fixed oxide charge	5
Simulation of low frequency noise in buried-channel MOSFET by a Green’s function-based numerical trap level model	5
Simulation study on physical parameters ruling unipolar resistance switching of sputter-deposited silicon oxide film on Si substrate	5
Investigation and optimization of traps properties in Al2O3/SiO2 dielectric stacks using conductance method	5
A differential OTP memory based highly unique and reliable PUF at 180 nm technology node	5
Impact of Device Layout on Self-Heating Extraction in MOSFETs	5
On the role of power dissipation in the Post-BD behavior of FDSOI NanoWire FETs	5
Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime	5
Application of explainable AI on deep learning-based gate length scalable IV parameter extractor for BSIM-IMG	5

About electron transport and spin control in semiconductor devices	5
Determination of source series resistances for InP HEMT under normal bias condition	5
A simulation physics-guided neural network for predicting semiconductor structure with few experimental data	5
Evaluation of a single interface trap position on the low-frequency noise of junctionless nanowire transistors	5
Perovskite-based optoelectronic artificial synaptic thin-film transistor	5
Corrigendum to “Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures” [Solid State Electron. 193 (2022) 108291]	5
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging	5
Mitigating LeTID-Induced performance loss through high-frequency AC carrier injection: Architecture-dependent recovery trends in crystalline silicon solar cells	5
Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors	5
Modeling electrical resistivity of CrSi thin films	5
Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures	5
Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge	5
Mobility and intrinsic performance of silicon-based nanosheet FETs at 3 nm CMOS and beyond	5
One-step variation included compact modeling with conditional variational autoencoder	5
An understanding of fracture kinetics during the layer transfer of InP	5
Analog resistive switching behavior in BiCoO3 thin film	5
Influence of temperature inhomogeneity and trap charge on current imbalance of SiC MOSFETs	5
Interface effects in ultra-scaled MRAM cells	5
Assessment of ion-sensitivity of Si3N4 based feedback field effect transistor using snap-back characteristics	5
Analysis of back-gate bias impact on 22 nm FDSOI SRAM cell	5
Opportunity to achieve an efficient SiC/SiO2 interface N passivation by tuning the simultaneous oxidation modes during the SiC surface nitridation in N2 + O2 annealing	5
Modulation of ballistic injection velocity in phosphorene nanodevices by bias and confinement effects	5
Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices	5
Improved self-heating extraction with RF technique at cryogenic temperatures	5
Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions	5
1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications	5
Nanoscale SOI strain engineering: STRASS-enabled local stress optimization	5
Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model	5
Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance	5
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs	5
Efficient atomistic simulations of lateral heterostructure devices with metal contacts	5
Editorial Board	5
Design and modeling of resonant tunneling transport-controlled voltage-induced double quantum dot channel nanowire field-effect-transistor (DQD-FET) for multi-threshold current levels	5
Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region	5
Analysis on effect of hot-carrier-induced degradation of NPT-IGBT	5
Competition between heating and cooling during dynamic self-heating degradation of amorphous InGaZnO thin-film transistors	5
300 Mm sSOI engineering with ultra thin buried oxide	5
Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests	5
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation	5
Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance	5
Editorial Board	5
Deep spiking neural networks with integrate and fire neuron using steep switching device	4
Device and circuit-level evaluation of a zero-cost transistor architecture developed via process optimization	4
Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET	4
Performance of FDSOI double-gate dual-doped reconfigurable FETs	4
The study on influence factors of contact properties of metal-MoS2 interfaces	4
Editorial Board	4
A novel method used to prepare PN junction by plasmon generated under pulsed laser irradiation on silicon chip	4
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon	4
Editorial Board	4
Design of auto-store circuit for nvSRAM with SONOS access transistor	4
Monte Carlo analysis of hot electron injection in the passivation layer of GaN HEMTs	4
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures	4
Reliable parameter extraction method applied to an enhanced GaN HEMT small-signal model	4
Pinning voltage model of vertical pinned photodiode for Dual-Pixel image sensor	4
Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables	4
Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs	4
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach	4
Editorial Board	4
SPICE simulation of the time-dependent clustering model for dielectric breakdown	4
Pseudo-MOSFET transient behavior: Experiments, model, substrate and temperature effect	4
High-densities of free holes in homoepitaxial n-GaN induced by fluorine-plasma ion implantation	4
Retention failure recovery technique for 3D TLC NAND flash memory via wordline (WL) interference	4
Structural distortion in ferroelectric HfO2 – The factor that determines electric field-induced phase transformation	4
A well-conditioned surface potential equation for dynamically depleted SOI MOS devices accounting for the front-depletion/back-accumulation operation mode	4
Si/Ge1−x	4
Comprehensive evaluation of torques in ultra-scaled MRAM devices	4
Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations	4
Quantum element method for multi-dimensional nanostructures enabled by a projection-based learning algorithm	4
Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices	4
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions	4
GaN p-i-n ultraviolet photodetectors grown on homogenous GaN bulk substrates	4
Temperature- and variability-aware compact modeling of ferroelectric FDSOI FET for memory and emerging applications	4
Effect of SOI substrate on silicon nitride resistance switching using MIS structure	4
Silicon nitride resistance switching MIS cells doped with silicon atoms	4
Impact of work function metal stacks on the performance and reliability of multi-V RMG CMOS technology	4
Electron and spin transport in semiconductor and magnetoresistive devices	4
Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic	4
Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion	4
Multi-state tunnel field effect transistor based on face tunneling with gate-source overlap	4
A computational study of AlScN-based ferroelectric tunnel junction	4
Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application	4
Stress management in freestanding membranes obtained by ion implantation induced delamination	4
Strong quantization of current-carrying electron states in δ-layer s	4
An efficient temperature dependent compact model for nanosheet FET for neuromorphic computing circuit	4
Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint	4
Efficient circuit simulation of a memristive crossbar array with synaptic weight variability	4
Impact of post metallization annealing (PMA) on the electrical properties of Ge nMOSFETs with ZrO2 dielectric	4
Methodology for parameters extraction with undoped junctionless EZ-FETs	4
An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs	4
Hierarchical simulation of nanosheet field effect transistor: NESS flow	4
Comparison of impact of channel length- and width-directional taper angle in nanosheet and forksheet FETs for 2 nm node and beyond	4
Improved inter-device variability in graphene liquid gate sensors by laser treatment	4
A composite model of memristors based on barrier and dopant drift mechanisms	4
Evidence of Transport Degradation in 22 nm FD-SOI Charge Trapping Transistors for Neural Network Applications	4