Solid-State Electronics

Article	Citations
Reconfigurable field effect transistors: A technology enablers perspective	36
20 Years of reconfigurable field-effect transistors: From concepts to future applications	35
Silicon photonics for terabit/s communication in data centers and exascale computers	33
Trapping effects on AlGaN/GaN HEMT characteristics	25
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures	20
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET	20
Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions	18
Compact modeling of 3D vertical junctionless gate-all-around silicon nanowire transistors towards 3D logic design	17
Origin of Incremental Step Pulse Programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash	16
Switching characteristic of fabricated nonvolatile bipolar resistive switching memory (ReRAM) using PEDOT: PSS/GO	16
Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications	16
Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0.5Zr0.5O2 bilayer system	16
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer	15
Effect of film thickness and temperature on the resistive switching characteristics of the Pt/HfO2/Al2O3/TiN structure	15
CMOS back-end-of-line compatible ferroelectric tunnel junction devices	15
Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants	15
Synthesis and characterization of ZnO nanoflowers by using simple spray pyrolysis technique	15
Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature	14
Effects of oxygen gas in the sputtering process of the WO3 sensing layer on NO2 sensing characteristics of the FET-type gas sensor	13
Carbon-based, all-inorganic, lead-free Ag2BiI5 rudorffite solar cells with high photovoltages	13
A fast small signal modeling method for GaN HEMTs	13
Barrier height tuning in Ti/4H-SiC Schottky diodes	13
2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure	13
Performance enhancement for AlGaN/GaN HEMTs with dual discrete field-plate	12
Relaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM	12

Negative differential resistance in novel nanoscale devices	12
High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications	12
Metal-organic framework (MOF)/reduced graphene oxide (rGO) composite for high performance CO sensor	12
Effects of La and Ni doping on ferroelectric and photocatalytic properties of Aurivillius Bi7Ti3Fe3O21	12
Dispersed and spherically assembled porous NiO nanosheets for low concentration ammonia gas sensing applications	12
A triboelectric nanogenerator based on white sugar for self-powered humidity sensor	12
Small signal model and analog performance analysis of negative capacitance FETs	11
New challenges of printed high-к oxide dielectrics	11
SPICE modeling of cycle-to-cycle variability in RRAM devices	10
Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices	10
Assessing the Effect of Scaling High-Aspect-Ratio ISFET with Physical Model Interface for Nano-Biosensing Application	10
Life-time degradation of STT-MRAM by self-heating effect with TDDB model	10
On-chip adaptive matching learning with charge-trap synapse device and ReLU activation circuit	10
Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current	10
STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing	10
Ab initio quantum transport simulations of monolayer GeS nanoribbons	10
Impact of plasma induced damage on the fabrication of 3D NAND flash memory	9
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function	9
Ruthenium doped Ge2Sb2Te5 nanomaterial as fast speed phase-change materials with good thermal stability	9
Diamond Schottky p-i-n diodes for high power RF receiver protectors	9
III-V-on-Si transistor technologies: Performance boosters and integration	9
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs	9
Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures	9
Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes	8
Correlation of natural honey-based RRAM processing and switching properties by experimental study and machine learning	8
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation	8
Modeling thermal effects in STT-MRAM	8
TCAD simulations of FDSOI devices down to deep cryogenic temperature	8
Highly-efficient OLED with cesium fluoride electron injection layer	8
MoS2-based multiterminal ionic transistor with orientation-dependent STDP learning rules	8
Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs	8
Fully vacuum-free large-area organic solar cell fabrication from polymer top electrode	8
Ferroelectric FDSOI FET modeling for memory and logic applications	8
Simplified electrical modeling for dye sensitized solar cells: Influences of the blocking layer and chenodeoxycholic acid additive	8
TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz	8
Negative capacitance enables GAA scaling VDD to 0.5 V	8
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices	7
A generalized EKV charge-based MOSFET model including oxide and interface traps	7
Bionic artificial synaptic floating gate transistor based on MXene	7
A low-power nanoelectromechanical (NEM) device with Al-doped HfO2-based ferroelectric capacitor	7
Performances of perovskite solar cells at low-intensity light irradiation	7
Single and triple insulator Metal-Insulator-Metal diodes for infrared rectennas	7
Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique	7
Effect of organic solvent vapor treatment on transistor performance and contact resistance of copper phthalocyanine based organic field-effect transistors	7
Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor	7
SPICE compatible semi-empirical compact model for ferroelectric hysteresis	7
Thickness dependence of dielectric properties in sub-nanometric Al2O3/ZnO laminates	7
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach	7
Evidence of ferroelectric HfO2 phase transformation induced by electric field cycling observed at a macroscopic scale	7
CARAT – A reliability analysis framework for BTI-HCD aging in circuits	7

Study of RTN signals in resistive switching devices based on neural networks	7
Effect of SOI substrate on silicon nitride resistance switching using MIS structure	7
Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs	7
Enhancing the temporal response of modified porous silicon-based CO gas sensor	7
Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application	7
Combined effects of NH3 and NF3 post plasma treatment on the performance of spray coated ZnO thin film transistors	7
Performance variation of solution-processed memristor induced by different top electrode	7
Double Reference Layer STT-MRAM Structures with Improved Performance	7
DFT-based layered dielectric model of few-layer MoS2	7
Architecture optimization of SPAD integrated in 28 nm FD-SOI CMOS technology to reduce the DCR	6
Improved interface characteristics of Mo/4H-SiC schottky contact	6
Temperature increase in STT-MRAM at writing: A fully three-dimensional finite element approach	6
Simulation study of Fermi level depinning in metal-MoS2 contacts	6
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors	6
Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate	6
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C	6
Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures	6
Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures	6
Harnessing the unique features of FDSOI CMOS technology in fibreoptic, millimetre-wave, and quantum computing circuits from 2 K to 400 K	6
Crystalline insulators for scalable 2D nanoelectronics	6
Hierarchical modeling for TCAD simulation of short-channel 2D material-based FETs	6
Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures	6
Custom measurement system for memristor characterisation	6
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices	6
Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors	6
High performance InGaAs channel MOSFETs on highly resistive InAlAs buffer layers	6
Light-induced nonvolatile resistive switching in Cs0.15FA0.85PbI3-XBrX perovskite-based memristors	6
A simple method for the photometric characterization of organic light-emitting diodes	6
Influence of variability on the performance of HfO2 memristor-based convolutional neural networks	6
Engineering of metal-MoS2 contacts to overcome Fermi level pinning	6
Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices	6
Applicability of Sc2O3 versus Al2O3 in MIM rectifiers for IR rectenna	6
Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance	6
Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge	6
Cryogenic characteristics of UTBB SOI Schottky-Barrier MOSFETs	6
Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations	5
Structure evolution and charge hysteresis in buried Hafnia-Alumina oxides	5
Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection	5
Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations	5
Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments	5
Poly(V3D3), an iCVD polymer with promising dielectric properties for high voltage capacitors	5
Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model	5
Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies	5
Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height	5
Investigation of electrical characteristics of flexible CMOS devices fabricated with thickness-controlled spalling process	5
Pragmatic Z2-FET compact model including DC and 1T-DRAM memory operation	5
Breaking the subthreshold slope limit in MOSFETs	5
Parasitic oscillation in the low-frequency noise characterization of solar cells	5
Performance of FDSOI double-gate dual-doped reconfigurable FETs	5
Stochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration	5
The core-shell junctionless MOSFET	5
Drift of the sensitive direction of Hall-effect devices in (1 0 0)-silicon caused by mechanical shear stress	5
Ab initio study of electron mobility in V2	5
Piezoelectric microsensor for selective detection of low concentrations of ammonia	5
Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs	5
Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme	5
Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations	5
Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions	5
Enhanced statistical detection of random telegraph noise in frequency and time domain	5
Palladium selenide as cathode for dye-sensitized solar cell: Effect of palladium content	5
A novel methodology for neural compact modeling based on knowledge transfer	5
Analog performance of GaN/AlGaN high-electron-mobility transistors	5
High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications	5
Physical parameters based analytical I-V model of long and short channel a-IGZO TFTs	5
An integrate-and-fire neuron with capacitive trans-impedance amplifier for improving linearity in Spiking Neural Networks	5
A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier	4
Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG)	4
Investigating interface states and oxide traps in the MoS2/oxide/Si system	4
Modeling of forward gate leakage current for normally off pGaN/AlGaN/GaN HEMTs	4
A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage	4
Structural design and experimental analysis for AlN Lamb-wave resonators with different electrical boundary conditions	4
Parasitic parameters extraction of InP HBT only from S-parameters measured under cut-off and normal bias conditions	4
Demonstration of integrate-and-fire neuron circuit for spiking neural networks	4
Channel doping effects in negative capacitance field-effect transistors	4
Barium titanate nanorods on micro-machined silicon substrate for performance enhancement of piezoelectric Nanogenerators (NGs)	4
Characterization and compact modeling of short channel MOSFETs at cryogenic temperatures	4
Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs	4
Influence of interface traps density and temperature variation on the NBTI effect in p-Type junctionless nanowire transistors	4
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors	4
Deep electron traps in HfO2-based ferroelectrics: (Al/Si-doped) HfO2 versus HfZrO4	4

Design of RRAM with high storage capacity and high reliability for IoT applications	4
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors	4
Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation	4
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions	4
Mechanism of Proton-Induced electrical degradation of AlGaN/GaN high electron mobility transistors	4
Low-temperature deuterium annealing to improve performance and reliability in a MOSFET	4
Superiority of core–shell junctionless FETs	4
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications	4
Analysis of 1/f and G–R noise in Phosphorene FETs	4
CMOS inverter performance degradation and its correlation with BTI, HCI and OFF state MOSFETs aging	4
An extended-temperature I-V model for GaN HEMTs	4
Assessment of paper-based MoS2 FET for Physically Unclonable Functions	4
All inorganic and transparent ITO/boehmite/ITO structure by one-step synthesis method for flexible memristor	4
Image-force barrier lowering in top- and side-contacted two-dimensional materials	4
Mobility degradation in 4H-SiC MOSFETs and interfacial formation of carbon clusters	4
Continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs	4
Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K	4
Hierarchical Mixture-of-Experts approach for neural compact modeling of MOSFETs	4
Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface	4
Phase-change memory electro-thermal analysis and engineering thanks to enhanced thermal confinement	4
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines	4
Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures	4
Modeling OFF-state harmonics in MOS transistors used as RF switches	4
Efficient atomistic simulations of lateral heterostructure devices with metal contacts	4
A simple test structure for the electrical characterization of front and back channels for advanced SOI technology development	4
Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices	4
Heat sink implementation in back-end of line for self-heating reduction in 22 nm FDSOI MOSFETs	4
Small-signal behavioral-level modeling of InP HBT based on SO-BP neural network	4
A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures	4
Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design	4
Anodic tantalum: Fabrication, breakdown characteristics of capacitor and integration with a WSe2 field effect transistor	4
On noise-induced transient bit flips in subthreshold SRAM	4
A low cost and simple structured WOLED device based on exciplex host and full fluorescent materials	4
A dynamic current hysteresis model for IGZO-TFT	4
A physics-based TCAD framework for NBTI	4
Demonstration and characterization of 500 V MIM capacitor with Al2O3 dielectric layer for power integrated circuits	4
Cryogenic characterization and modeling of a CMOS floating-gate device for quantum control hardware	4
On the feasibility of DoS-engineering for achieving sub-60 mV subthreshold slope in MOSFETs	4
PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin AlGaN barrier	4
Recovering the carrier number conservation in SPICE simulation of PIN diodes and IGBT devices	4
Finite element modeling of spin–orbit torques	4
Surrogate models for device design using sample-efficient Deep Learning	4
Role of temperature, MTJ size and pulse-width on STT-MRAM bit-error rate and backhopping	4
Versatile experimental setup for FTJ characterization	4
Robust cryogenic ab-initio quantum transport simulation for LG = 10 nm nanowire	4
Stochastic switching of memristors and consideration in circuit simulation	4
A simulation physics-guided neural network for predicting semiconductor structure with few experimental data	4
Exploiting the KPFM capabilities to analyze at the nanoscale the impact of electrical stresses on OTFTs properties	4
Thin-film transistor accumulation-mode modeling	4