Solid-State Electronics

Papers
(The TQCC of Solid-State Electronics is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-04-01 to 2024-04-01.)
ArticleCitations
Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications48
On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature43
Scaled resistively-coupled VO2 oscillators for neuromorphic computing38
Silicon photonics for terabit/s communication in data centers and exascale computers28
20 Years of reconfigurable field-effect transistors: From concepts to future applications27
Reconfigurable field effect transistors: A technology enablers perspective26
Trapping effects on AlGaN/GaN HEMT characteristics21
Tailoring PEDOT:PSS polymer electrode for solution-processed inverted organic solar cells20
Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature19
Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions17
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures17
Performance of pyrocatechol violet and carminic acid sensitized ZnO/CdS nanostructured photoactive materials for dye sensitized solar cell16
Leakage current mechanisms of groove-type tungsten-anode GaN SBDs with ultra low turn-ON voltage and low reverse current15
Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants15
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer15
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET14
Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0.5Zr0.5O2 bilayer system14
Post-process porous silicon for 5G applications13
Phenol red based hybrid photodiode for optical detector applications13
Barrier height tuning in Ti/4H-SiC Schottky diodes13
Origin of Incremental Step Pulse Programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash12
Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature12
CMOS back-end-of-line compatible ferroelectric tunnel junction devices12
A fast small signal modeling method for GaN HEMTs12
High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications12
Relaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM12
Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications12
Compact modeling of 3D vertical junctionless gate-all-around silicon nanowire transistors towards 3D logic design12
Comprehensive predictive modeling of resistive switching devices using a bias-dependent window function approach12
Carbon-based, all-inorganic, lead-free Ag2BiI5 rudorffite solar cells with high photovoltages11
New challenges of printed high-к oxide dielectrics11
Contact resistance extraction of graphene FET technologies based on individual device characterization11
2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure11
Switching characteristic of fabricated nonvolatile bipolar resistive switching memory (ReRAM) using PEDOT: PSS/GO11
A triboelectric nanogenerator based on white sugar for self-powered humidity sensor11
Effects of La and Ni doping on ferroelectric and photocatalytic properties of Aurivillius Bi7Ti3Fe3O2111
Effect of film thickness and temperature on the resistive switching characteristics of the Pt/HfO2/Al2O3/TiN structure11
Well-behaved 4H-SiC PMOSFET with LOCal oxidation of SiC (LOCOSiC) isolation structure and compromised gate oxide for Sub-10V SiC CMOS application11
Small signal model and analog performance analysis of negative capacitance FETs11
Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM10
Metal-organic framework (MOF)/reduced graphene oxide (rGO) composite for high performance CO sensor10
Synthesis and characterization of ZnO nanoflowers by using simple spray pyrolysis technique10
The thermoelectric-photoelectric integrated power generator and its design verification9
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs9
Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures9
Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current9
STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing9
Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs9
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs9
SPICE modeling of cycle-to-cycle variability in RRAM devices9
Ruthenium doped Ge2Sb2Te5 nanomaterial as fast speed phase-change materials with good thermal stability9
Comparative study on performance of AlGaN/GaN MS-HEMTs with SiNx, SiOx, and SiNO surface passivation9
Diamond Schottky p-i-n diodes for high power RF receiver protectors9
Life-time degradation of STT-MRAM by self-heating effect with TDDB model9
Photodiode with low dark current built in silicon-on-insulator using electrostatic doping8
Impact of nitridation on the active near-interface traps in gate oxides on 4H-SiC8
Dispersed and spherically assembled porous NiO nanosheets for low concentration ammonia gas sensing applications8
Modeling source/drain lateral Gaussian doping profile of DG-MOSFET using Green’s function approach8
Effects of oxygen gas in the sputtering process of the WO3 sensing layer on NO2 sensing characteristics of the FET-type gas sensor8
Impact of plasma induced damage on the fabrication of 3D NAND flash memory8
Third-order intercepts and nonlinear distortion level investigation for pre and post multilayer pHEMTs8
Size effect of electronic properties in highly arsenic-doped silicon nanowires8
Efficient compact modelling of UTC-photodiode towards terahertz communication system design8
Negative capacitance enables GAA scaling VDD to 0.5 V8
Ab initio quantum transport simulations of monolayer GeS nanoribbons7
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices7
Fully vacuum-free large-area organic solar cell fabrication from polymer top electrode7
Performance enhancement for AlGaN/GaN HEMTs with dual discrete field-plate7
Severe hump phenomenon induced by increased charge trapping and suppression of electron capture effect in amorphous In-Ga-Zn-O thin-film transistors under unipolar pulsed drain bias with static positi7
Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model7
Assessing the Effect of Scaling High-Aspect-Ratio ISFET with Physical Model Interface for Nano-Biosensing Application7
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function7
A generalized EKV charge-based MOSFET model including oxide and interface traps7
Highly-efficient OLED with cesium fluoride electron injection layer7
MoS2-based multiterminal ionic transistor with orientation-dependent STDP learning rules7
Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique7
A study of conductance update method for Ni/SiNx/Si analog synaptic device7
Modeling thermal effects in STT-MRAM7
TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz7
Negative differential resistance in novel nanoscale devices7
Investigation of the anomalous hump phenomenon in amorphous InGaZnO thin-film transistors7
Correlation of natural honey-based RRAM processing and switching properties by experimental study and machine learning7
Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance6
Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes6
Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application6
Improving the neutrality point uniformity for SG-FET-based DNA sensor6
Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge6
Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN6
Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate6
III-V-on-Si transistor technologies: Performance boosters and integration6
Performance variation of solution-processed memristor induced by different top electrode6
Effect of organic solvent vapor treatment on transistor performance and contact resistance of copper phthalocyanine based organic field-effect transistors6
Hafnia and alumina stacks as UTBOXs in silicon-on insulator6
Bionic artificial synaptic floating gate transistor based on MXene6
Engineering of metal-MoS2 contacts to overcome Fermi level pinning6
Crystalline insulators for scalable 2D nanoelectronics6
Copper phthalocyanine buffer interlayer film incorporated in paper substrates for printed circuit boards and dielectric applications in flexible electronics6
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach6
Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations6
Electrical properties of MgO/GaN metal-oxide-semiconductor structures6
Channel width dependent subthreshold operation of tri-gate junctionless transistors6
Double Reference Layer STT-MRAM Structures with Improved Performance6
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors6
Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor6
Improved interface characteristics of Mo/4H-SiC schottky contact6
A low-power nanoelectromechanical (NEM) device with Al-doped HfO2-based ferroelectric capacitor6
Simulation study of Fermi level depinning in metal-MoS2 contacts6
A method for threshold voltage extraction in junctionless MOSFETs using the derivative of transconductance-to-current ratio6
Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs6
Performances of perovskite solar cells at low-intensity light irradiation6
Electron-hole bilayer light-emitting device: Concept and operation6
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation6
Single and triple insulator Metal-Insulator-Metal diodes for infrared rectennas6
Effect of SOI substrate on silicon nitride resistance switching using MIS structure6
Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs5
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization5
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors5
Custom measurement system for memristor characterisation5
Temperature increase in STT-MRAM at writing: A fully three-dimensional finite element approach5
A modified finite difference model to the reverse recovery of silicon PIN diodes5
Parasitic oscillation in the low-frequency noise characterization of solar cells5
Evidence of ferroelectric HfO2 phase transformation induced by electric field cycling observed at a macroscopic scale5
High quality GaAs epitaxially grown on Si(001) substrate through AlAs nucleation and thermal cycle annealing5
The effect of edge-terminated structure for lateral AlGaN/GaN Schottky barrier diodes with gated ohmic anode5
Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model5
Study of RTN signals in resistive switching devices based on neural networks5
Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors5
Ion implantation of aluminum in 4H-SiC epilayers from 90 keV to above 1 MeV5
Investigation of electrical characteristics of flexible CMOS devices fabricated with thickness-controlled spalling process5
A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence5
Piezoelectric microsensor for selective detection of low concentrations of ammonia5
Ferroelectric FDSOI FET modeling for memory and logic applications5
Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations5
Thickness dependence of dielectric properties in sub-nanometric Al2O3/ZnO laminates5
Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions5
Palladium selenide as cathode for dye-sensitized solar cell: Effect of palladium content5
Stochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration5
Thermometric SOI lateral diodes for bolometric application: Comparison between Schottky and p-i-n diodes5
Surface modification of the TiO2/g-CN core-shell nanostructure with bimetallic NiMoO4 nanosheets for the improved photoelectrochemical water oxidation5
High performance InGaAs channel MOSFETs on highly resistive InAlAs buffer layers5
Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact5
Simplified electrical modeling for dye sensitized solar cells: Influences of the blocking layer and chenodeoxycholic acid additive5
Light-induced nonvolatile resistive switching in Cs0.15FA0.85PbI3-XBrX perovskite-based memristors5
Analog performance of GaN/AlGaN high-electron-mobility transistors5
A simple method for the photometric characterization of organic light-emitting diodes5
On the charge transport mechanisms in Ge-rich GeSbTe alloys5
Applicability of Sc2O3 versus Al2O3 in MIM rectifiers for IR rectenna5
Enhancing the temporal response of modified porous silicon-based CO gas sensor5
Influence of variability on the performance of HfO2 memristor-based convolutional neural networks5
On-chip adaptive matching learning with charge-trap synapse device and ReLU activation circuit5
Combined effects of NH3 and NF3 post plasma treatment on the performance of spray coated ZnO thin film transistors5
Behavior of gold-doped silicon substrate under small- and large-RF signal5
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices5
Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures5
High-power electro-mechanical behavior of a capacitive microwave power sensor with warped cantilever beam5
Harnessing the unique features of FDSOI CMOS technology in fibreoptic, millimetre-wave, and quantum computing circuits from 2 K to 400 K5
Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs5
Cryogenic characterization and modeling of a CMOS floating-gate device for quantum control hardware4
Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations4
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines4
Influence of interface traps density and temperature variation on the NBTI effect in p-Type junctionless nanowire transistors4
Modeling OFF-state harmonics in MOS transistors used as RF switches4
Finite element modeling of spin–orbit torques4
Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices4
Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation4
Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments4
Efficient atomistic simulations of lateral heterostructure devices with metal contacts4
Demonstration and characterization of 500 V MIM capacitor with Al2O3 dielectric layer for power integrated circuits4
Superiority of core–shell junctionless FETs4
A breakdown model of LDMOS optimizing lateral and vertical electric field to improve breakdown voltage by multi-ring technology4
Heat sink implementation in back-end of line for self-heating reduction in 22 nm FDSOI MOSFETs4
Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K4
Continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs4
Pragmatic Z2-FET compact model including DC and 1T-DRAM memory operation4
Assessment of paper-based MoS2 FET for Physically Unclonable Functions4
PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin AlGaN barrier4
Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures4
Hierarchical modeling for TCAD simulation of short-channel 2D material-based FETs4
The core-shell junctionless MOSFET4
Exploiting the KPFM capabilities to analyze at the nanoscale the impact of electrical stresses on OTFTs properties4
Drift of the sensitive direction of Hall-effect devices in (1 0 0)-silicon caused by mechanical shear stress4
Channel doping effects in negative capacitance field-effect transistors4
Physical parameters based analytical I-V model of long and short channel a-IGZO TFTs4
Performance of FDSOI double-gate dual-doped reconfigurable FETs4
Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme4
A dynamic current hysteresis model for IGZO-TFT4
A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier4
CARAT – A reliability analysis framework for BTI-HCD aging in circuits4
Architecture optimization of SPAD integrated in 28 nm FD-SOI CMOS technology to reduce the DCR4
Highly stable GaN-based betavoltaic structures grown on different dislocation density substrates4
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C4
Structural design and experimental analysis for AlN Lamb-wave resonators with different electrical boundary conditions4
Barium titanate nanorods on micro-machined silicon substrate for performance enhancement of piezoelectric Nanogenerators (NGs)4
Structure evolution and charge hysteresis in buried Hafnia-Alumina oxides4
Channel mobility and contact resistance in scaled ZnO thin-film transistors4
Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection4
Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors4
Investigating interface states and oxide traps in the MoS2/oxide/Si system4
Robust cryogenic ab-initio quantum transport simulation for LG = 10 nm nanowire4
Degradation study of carrier selective contact silicon solar cells with ageing: Role of silicon surface morphology4
Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies4
Mobility degradation in 4H-SiC MOSFETs and interfacial formation of carbon clusters4
Experimental and simulation investigation of the out-of-equilibrium phenomena on the pseudo-MOSFET configuration under transient linear voltage ramps4
All inorganic and transparent ITO/boehmite/ITO structure by one-step synthesis method for flexible memristor4
Thin-film transistor accumulation-mode modeling4
A novel methodology for neural compact modeling based on knowledge transfer4
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications4
Low-temperature deuterium annealing to improve performance and reliability in a MOSFET4
The mechanism of defects effect on carrier transport by employing multi-wavelength sub-bandgap lights on CdZnTe crystal4
Image-force barrier lowering in top- and side-contacted two-dimensional materials4
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