Solid-State Electronics

Papers
(The TQCC of Solid-State Electronics is 4. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-03-01 to 2025-03-01.)
ArticleCitations
Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region47
Investigation on holding voltage of asymmetric DDSCR with floating heavy doping in 0.18 μm CMOS process38
Tailoring the optoelectronic properties of PZT through the modulation of the thin film33
Perovskite-based optoelectronic artificial synaptic thin-film transistor20
A generalizable, uncertainty-aware neural network potential for GeSbTe with Monte Carlo dropout20
Assessment of the variability of the I-V characteristic of HfO2-based resistive switching devices and its simulation using the quasi-static memdiode model18
Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors17
Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs17
Threshold voltage in FD-SOI MOSFETs17
Small signal model and analog performance analysis of negative capacitance FETs16
Influence of sub-band gap density of states on the electrical performance of amorphous SiZnSnO thin film transistor15
Superiority of core–shell junctionless FETs15
Negative capacitance enables GAA scaling VDD to 0.5 V15
Editorial Board15
Modeling current and voltage peaks generation in complementary resistive switching devices15
A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier13
Editorial Board13
Removing crosstalk effect for high efficient polymer light emitting diode display13
Editorial Board12
In-depth analysis of electrical characteristics for polycrystalline silicon vertical thin film transistors12
A novel ferroelectric nanopillar multi-level cell memory12
THz gain compression in nanoscale FinFETs12
Structural properties of Ge-Sb-Te alloys12
Electrical instabilities in amorphous Si-Zn-sn-O thin film transistors under ultra-violet irradiation depending on oxygen content12
Phonon-assisted transport in van der Waals heterostructure tunnel devices12
TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic11
A generalizable TCAD framework for silicon FinFET spin qubit devices with electrical control11
3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology11
Modeling of SiC transistor with counter-doped channel11
Editorial Board10
Electron conduction mechanisms in magnetic tunnel junctions fabricated using amorphous Si-Zn-Sn-O as a low-resistive semiconducting barrier10
Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor10
Editorial Board10
Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device10
Editorial Board10
Undoped junctionless EZ-FET: Model and measurements9
Massively parallel FDTD-FBMC simulations of nonlinear hole dynamics in silicon at cryogenic temperatures driven by intense EM THz pulses9
Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs9
Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance9
Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures9
Compact I-V model for back-gated and double-gated TMD FETs9
Editorial Board9
Simplified EKV model parameter extraction in polysilicon MOSFETs8
A sub-30 GHz differential-frequency tripler in 22-nm FDSOI technology for FMCW spectrum8
Electrical characterization of SOI pMOS device leakage8
Editorial Board8
Editorial Board8
Thin-film transistor accumulation-mode modeling8
Editorial Board8
Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon8
Temperature optimization for AlGaN/GaN HEMT with the etched AlGaN layer based on 2-D thermal model8
Engineering the contact resistance of copper/copper oxide via inserting a mediated molybdenum trioxide layer8
Competition between heating and cooling during dynamic self-heating degradation of amorphous InGaZnO thin-film transistors8
Editorial Board8
III-V-on-Si transistor technologies: Performance boosters and integration8
Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices7
SPICE compatible semi-empirical compact model for ferroelectric hysteresis7
Negative capacitance field-effect transistor with hetero-dielectric structure for suppression of reverse drain induced barrier lowering7
Assessment of a universal logic gate and a full adder circuit based on CMOS-memristor technology7
Study on electrical performance of AlGaN/GaN high electron mobility transistor based on cap layer design7
Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current7
The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length7
Non-local transport effects in semiconductors under low-field conditions7
Silicon photonics for terabit/s communication in data centers and exascale computers7
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation7
Custom measurement system for memristor characterisation7
Analysis of back-gate bias impact on 22 nm FDSOI SRAM cell7
Pragmatic Z2-FET compact model including DC and 1T-DRAM memory operation7
Improved self-heating extraction with RF technique at cryogenic temperatures7
Surface-potential-based drain current model for two-dimensional organic TFTs using the multiple trapping and release conduction theory7
Impact of sidewall spacer materials and gate underlap length on negative capacitance double-gate tunnel field-effect transistor (NCDG-TFET)7
Analysis on effect of hot-carrier-induced degradation of NPT-IGBT7
Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor7
Spiro-OMeTAD Anchoring perovskite for gradual homojunction in stable perovskite solar cells7
Editorial Board7
Smart-CX – Method of extraction of parasitic capacitances in ICs7
Deep learning-based I-V Global Parameter Extraction for BSIM-CMG7
Reliability studies on bipolar transistors under different particles radiation7
Frequency doubler based on unipolar thin-film-transistor technologies7
Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance7
Heat sink implementation in back-end of line for self-heating reduction in 22 nm FDSOI MOSFETs6
SPICE modeling of cycle-to-cycle variability in RRAM devices6
A differential OTP memory based highly unique and reliable PUF at 180 nm technology node6
Fully vacuum-free large-area organic solar cell fabrication from polymer top electrode6
Low-temperature deuterium annealing to improve performance and reliability in a MOSFET6
Two-pulse switching scheme and reinforcement learning for energy efficient SOT-MRAM simulations6
Reconfigurable field effect transistors: A technology enablers perspective6
Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme6
Strong efficiency enhancement of organic light-emitting devices using pin type structures6
Experimental study of thermal coupling effects in FD-SOI MOSFET6
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation6
A generalized EKV charge-based MOSFET model including oxide and interface traps6
Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 °C6
Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations6
Modeling optical second harmonic generation for oxide/semiconductor interface characterization6
Multi-level storage in cleaved-gate ferroelectric FETs investigated by 3D phase-field-based quantum transport simulation6
Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design6
Enhancing the temporal response of modified porous silicon-based CO gas sensor6
Fabrication and characterization of GaN HEMTs grown on SiC substrates with different orientations6
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator6
Revisited parasitic bipolar effect in FDSOI MOSFETs: Mechanism, gain extraction and circuit applications6
An integrate-and-fire neuron with capacitive trans-impedance amplifier for improving linearity in Spiking Neural Networks6
Interface effects in ultra-scaled MRAM cells6
Strategies for ultra-fast bit generation of two-terminal threshold switch-based true random number generator using drift-free Ge-doped SiO2 threshold switch device6
Modeling thermal effects in STT-MRAM6
Current-voltage characteristics and DLTS spectra of high voltage SiC Schottky diodes irradiated with electrons at high temperatures6
An enzymatic glucose biosensor using the BESOI MOSFET5
Implantation-free SiC thyristor with single-mask 3D termination near 10 kV5
Opportunity to achieve an efficient SiC/SiO2 interface N passivation by tuning the simultaneous oxidation modes during the SiC surface nitridation in N2 + O2 annealing5
Charge dynamics of amino acids fingerprints and the effect of density on FinFET-based Electrolyte-gated sensor5
Impact of passivation layer on the subthreshold behavior of p-type CuO accumulation-mode thin-film transistors5
Unveiling the reliability of negative capacitance FinFET with confrontation of different HfO2-ferroelectric dopants5
Impedance sensors based on silicon-carbon films for detection low concentrations of organic vapors5
A simulation physics-guided neural network for predicting semiconductor structure with few experimental data5
A novel dual-directional DTSCR in twin-well process for ultra-low-voltage ESD protection5
Simulation of BioGFET sensors using TCAD5
Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects5
Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier5
SOS pseudo-FeFETs after furnace or rapid annealings and thining by thermal oxidation5
Improvement of power consumption and linearity of integrate/fire characteristics using diffusive memristors with defective graphene for artificial neuron application5
Stable and repeatable ZrO2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination5
Modulation of ballistic injection velocity in phosphorene nanodevices by bias and confinement effects5
About electron transport and spin control in semiconductor devices5
A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping5
Analysis of the mobility behavior of MOS2 2D FETs5
An atomistic modeling framework for valence change memory cells5
A physics-based compact model of thermal resistance in RRAMs5
An accurate circuit model of Ge/Si single photon avalanche diode5
Analog resistive switching behavior in BiCoO3 thin film5
Investigation of low to high-dose gamma-ray (γ-ray) radiation effects on indium-zinc-oxide (IZO) thin film transistor (TFT)5
Sputter-Deposited copper iodide thin film transistors with low Operating voltage5
Computational model for predicting structural stability and stress transfer of a new SiGe stressor technique for NMOS devices5
Determination of source series resistances for InP HEMT under normal bias condition5
Comprehensive evaluation of gate-induced drain leakage in SOI stacked nanowire nMOSFETs operating in high-temperatures5
Simulation and experimental Demonstration on A retrograde drift LDMOS4
Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures4
Comparative analysis of capacitorless DRAM performance according to stacked junctionless gate-all-around structures4
Si bilayer tunnel field-effect transistor structure realized using tilted ion-implantation technique4
Corrigendum to “TCAD simulations of FDSOI devices down to deep cryogenic temperature” [Solid-State Electron. 194 (2022) 108319]4
Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition4
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function4
Ultrafast self-powered phototransistor based on Te-WSe2 van der Waals heterojunction4
Ab initio study of electron mobility in V24
Comparative analysis of NBTI modeling frameworks BAT and Comphy4
Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime4
Efficient atomistic simulations of lateral heterostructure devices with metal contacts4
Efficient planar mixed-cation perovskite photovoltaics with low-temperature-processed indium sulfide as electron transport material4
An estimation of 2DEG density for GaN HEMT using analytical equation considering the charge conservation low4
Relaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM4
Automatic grid refinement for thin material layer etching in process TCAD simulations4
Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology4
Design of auto-store circuit for nvSRAM with SONOS access transistor4
Full quantum simulation of Shockley–Read–Hall recombination in p-i-n and tunnel diodes4
A unified explicit charge-based capacitance model for metal oxide thin-film transistors4
Technology and design study of 3D physics-based inductor on FDSOI in GHz-range4
Investigation on MOS shunt LVTSCR for ESD application4
Effect of SOI substrate on silicon nitride resistance switching using MIS structure4
Corrigendum to “Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures” [Solid State Electron. 193 (2022) 108291]4
DTCO flow for air spacer generation and its impact on power and performance at N74
On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire MOSFETs with bulk source contact4
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors4
Temperature dependent characteristics of Ti/Al/Ni/Au Ohmic contact on lattice-matched In0.17Al0.83N/GaN heterostructures4
Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications4
Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices4
Coupling a phase field model with an electro-thermal solver to simulate PCM intermediate resistance states for neuromorphic computing4
Metal-organic framework (MOF)/reduced graphene oxide (rGO) composite for high performance CO sensor4
Electron-phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS4
High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications4
Comprehensive evaluation of torques in ultra-scaled MRAM devices4
Fabrication of transparent ZnO/Cu-Mg(OH)2 heterojunction diodes by electrochemical deposition4
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures4
Transfer modeling of 1T1R crossbar arrays with line resistances based on matrix algebra method4
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon4
Physical parameters based analytical I-V model of long and short channel a-IGZO TFTs4
Design of RRAM with high storage capacity and high reliability for IoT applications4
Analysis of anomalous C-V behavior for extracting the traps density in the undoped polysilicon with a double-BOX structure4
Editorial Board4
Electron mobility distribution in FD-SOI MOSFETs using a NEGF-Poisson approach4
Robust cryogenic ab-initio quantum transport simulation for LG = 10 nm nanowire4
TCAD simulations of FDSOI devices down to deep cryogenic temperature4
Bismuth tungstate nanosheets sensors based on Temkin adsorption model for triethylamine detection4
Si nanowire-based micro-capacitors fabricated with metal assisted chemical etching for integrated energy storage applications4
Synaptic transistors based on transparent oxide for neural image recognition4
Analog performance of GaN/AlGaN high-electron-mobility transistors4
C-V characterization of the trap-rich layer in a novel Double-BOX structure4
Improved responsivity and detectivity of LPE HgCdTe short-wavelength infrared photodetector by tuning the composition gradient4
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions4
Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K4
Piezoelectric microsensor for selective detection of low concentrations of ammonia4
Barrier height tuning in Ti/4H-SiC Schottky diodes4
Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors4
Analytical model based estimation of line edge roughness induced V<4
An ultra low power spiking neural encoder of microwave signals4
Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor4
Impact of JFET width on conduction characteristic for p-channel SiC IGBT4
Impact of substrate resistivity on spiral inductors at mm-wave frequencies4
DFT-based layered dielectric model of few-layer MoS24
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