Solid-State Electronics

Papers
(The median citation count of Solid-State Electronics is 1. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-03-01 to 2024-03-01.)
ArticleCitations
SO2 gas sensing characteristics of FET- and resistor-type gas sensors having WO3 as sensing material48
Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications46
On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature43
Scaled resistively-coupled VO2 oscillators for neuromorphic computing37
Poly(vinyl alcohol)-gated junctionless Al-Zn-O phototransistor for photonic and electric hybrid neuromorphic computation29
20 Years of reconfigurable field-effect transistors: From concepts to future applications26
Silicon photonics for terabit/s communication in data centers and exascale computers26
Reconfigurable field effect transistors: A technology enablers perspective23
Trapping effects on AlGaN/GaN HEMT characteristics20
Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature19
Tailoring PEDOT:PSS polymer electrode for solution-processed inverted organic solar cells19
Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions17
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures17
Performance of pyrocatechol violet and carminic acid sensitized ZnO/CdS nanostructured photoactive materials for dye sensitized solar cell16
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer15
Leakage current mechanisms of groove-type tungsten-anode GaN SBDs with ultra low turn-ON voltage and low reverse current15
Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0.5Zr0.5O2 bilayer system14
Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants14
Barrier height tuning in Ti/4H-SiC Schottky diodes13
Post-process porous silicon for 5G applications13
Phenol red based hybrid photodiode for optical detector applications13
High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications12
Comprehensive predictive modeling of resistive switching devices using a bias-dependent window function approach12
A fast small signal modeling method for GaN HEMTs12
CMOS back-end-of-line compatible ferroelectric tunnel junction devices12
Implementation of homeostasis functionality in neuron circuit using double-gate device for spiking neural network12
Compact modeling of 3D vertical junctionless gate-all-around silicon nanowire transistors towards 3D logic design12
Relaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM12
Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications12
Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature11
Switching characteristic of fabricated nonvolatile bipolar resistive switching memory (ReRAM) using PEDOT: PSS/GO11
Small signal model and analog performance analysis of negative capacitance FETs11
Carbon-based, all-inorganic, lead-free Ag2BiI5 rudorffite solar cells with high photovoltages11
Contact resistance extraction of graphene FET technologies based on individual device characterization11
2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure11
A triboelectric nanogenerator based on white sugar for self-powered humidity sensor11
Synthesis and characterization of ZnO nanoflowers by using simple spray pyrolysis technique10
Well-behaved 4H-SiC PMOSFET with LOCal oxidation of SiC (LOCOSiC) isolation structure and compromised gate oxide for Sub-10V SiC CMOS application10
Effects of La and Ni doping on ferroelectric and photocatalytic properties of Aurivillius Bi7Ti3Fe3O2110
Effect of film thickness and temperature on the resistive switching characteristics of the Pt/HfO2/Al2O3/TiN structure10
Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET10
Origin of Incremental Step Pulse Programming (ISPP) slope degradation in charge trap nitride based multi-layer 3D NAND flash10
New challenges of printed high-к oxide dielectrics10
Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM10
The thermoelectric-photoelectric integrated power generator and its design verification9
Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs9
Metal-organic framework (MOF)/reduced graphene oxide (rGO) composite for high performance CO sensor9
SPICE modeling of cycle-to-cycle variability in RRAM devices9
STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing9
Comparative study on performance of AlGaN/GaN MS-HEMTs with SiNx, SiOx, and SiNO surface passivation9
Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures9
Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current9
Ruthenium doped Ge2Sb2Te5 nanomaterial as fast speed phase-change materials with good thermal stability9
Low frequency noise performance of horizontal, stacked and vertical silicon nanowire MOSFETs9
Diamond Schottky p-i-n diodes for high power RF receiver protectors9
Life-time degradation of STT-MRAM by self-heating effect with TDDB model9
Negative capacitance enables GAA scaling VDD to 0.5 V8
Impact of nitridation on the active near-interface traps in gate oxides on 4H-SiC8
Third-order intercepts and nonlinear distortion level investigation for pre and post multilayer pHEMTs8
Efficient compact modelling of UTC-photodiode towards terahertz communication system design8
Modeling source/drain lateral Gaussian doping profile of DG-MOSFET using Green’s function approach8
Size effect of electronic properties in highly arsenic-doped silicon nanowires8
Dispersed and spherically assembled porous NiO nanosheets for low concentration ammonia gas sensing applications8
Defect-creation effects on abnormal on-current under drain bias illumination stress in a-IGZO thin-film transistors7
Investigation of the anomalous hump phenomenon in amorphous InGaZnO thin-film transistors7
Correlation of natural honey-based RRAM processing and switching properties by experimental study and machine learning7
Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices7
Exploring the “resistance change per energy unit” as universal performance parameter for resistive switching devices7
TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz7
Effects of oxygen gas in the sputtering process of the WO3 sensing layer on NO2 sensing characteristics of the FET-type gas sensor7
Severe hump phenomenon induced by increased charge trapping and suppression of electron capture effect in amorphous In-Ga-Zn-O thin-film transistors under unipolar pulsed drain bias with static positi7
Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs7
Assessing the Effect of Scaling High-Aspect-Ratio ISFET with Physical Model Interface for Nano-Biosensing Application7
Fully vacuum-free large-area organic solar cell fabrication from polymer top electrode7
Semi-transparent organic-inorganic hybrid perovskite light-emitting diodes fabricated under high relative humidity7
Negative differential resistance in novel nanoscale devices7
Highly-efficient OLED with cesium fluoride electron injection layer7
Photodiode with low dark current built in silicon-on-insulator using electrostatic doping7
Impact of plasma induced damage on the fabrication of 3D NAND flash memory7
A study of conductance update method for Ni/SiNx/Si analog synaptic device7
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function7
Double Reference Layer STT-MRAM Structures with Improved Performance6
Hafnia and alumina stacks as UTBOXs in silicon-on insulator6
Channel width dependent subthreshold operation of tri-gate junctionless transistors6
Modeling thermal effects in STT-MRAM6
A generalized EKV charge-based MOSFET model including oxide and interface traps6
Performance enhancement for AlGaN/GaN HEMTs with dual discrete field-plate6
Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application6
Crystalline insulators for scalable 2D nanoelectronics6
Improving the neutrality point uniformity for SG-FET-based DNA sensor6
Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge6
Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model6
Single and triple insulator Metal-Insulator-Metal diodes for infrared rectennas6
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors6
III-V-on-Si transistor technologies: Performance boosters and integration6
Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor6
Electron-hole bilayer light-emitting device: Concept and operation6
Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs6
Bionic artificial synaptic floating gate transistor based on MXene6
Engineering of metal-MoS2 contacts to overcome Fermi level pinning6
Simulation study of Fermi level depinning in metal-MoS2 contacts6
A method for threshold voltage extraction in junctionless MOSFETs using the derivative of transconductance-to-current ratio6
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach6
Electrical properties of MgO/GaN metal-oxide-semiconductor structures6
Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique6
Effect of SOI substrate on silicon nitride resistance switching using MIS structure6
Addressing source to drain tunneling in extremely scaled Si-transistors using negative capacitance6
Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations6
Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN6
Effects of thermal annealing time and molar ratio of channel layers on solution-processed ZnO/SnO2 thin-film transistors6
A low-power nanoelectromechanical (NEM) device with Al-doped HfO2-based ferroelectric capacitor6
Copper phthalocyanine buffer interlayer film incorporated in paper substrates for printed circuit boards and dielectric applications in flexible electronics6
MoS2-based multiterminal ionic transistor with orientation-dependent STDP learning rules6
Performances of perovskite solar cells at low-intensity light irradiation6
Ab initio quantum transport simulations of monolayer GeS nanoribbons6
Simplified electrical modeling for dye sensitized solar cells: Influences of the blocking layer and chenodeoxycholic acid additive5
Effect of organic solvent vapor treatment on transistor performance and contact resistance of copper phthalocyanine based organic field-effect transistors5
Piezoelectric microsensor for selective detection of low concentrations of ammonia5
A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence5
Enhancing the temporal response of modified porous silicon-based CO gas sensor5
Ferroelectric FDSOI FET modeling for memory and logic applications5
Parasitic oscillation in the low-frequency noise characterization of solar cells5
Temperature increase in STT-MRAM at writing: A fully three-dimensional finite element approach5
Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices5
Stochastic multiscale model for HfO2-based resistive random access memories with 1T1R configuration5
Behavior of gold-doped silicon substrate under small- and large-RF signal5
High performance InGaAs channel MOSFETs on highly resistive InAlAs buffer layers5
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation5
Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model5
Investigation of electrical characteristics of flexible CMOS devices fabricated with thickness-controlled spalling process5
Ion implantation of aluminum in 4H-SiC epilayers from 90 keV to above 1 MeV5
On the charge transport mechanisms in Ge-rich GeSbTe alloys5
A simple method for the photometric characterization of organic light-emitting diodes5
A modified finite difference model to the reverse recovery of silicon PIN diodes5
Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes5
Thickness dependence of dielectric properties in sub-nanometric Al2O3/ZnO laminates5
Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions5
High quality GaAs epitaxially grown on Si(001) substrate through AlAs nucleation and thermal cycle annealing5
Thermometric SOI lateral diodes for bolometric application: Comparison between Schottky and p-i-n diodes5
Performance variation of solution-processed memristor induced by different top electrode5
Surface modification of the TiO2/g-CN core-shell nanostructure with bimetallic NiMoO4 nanosheets for the improved photoelectrochemical water oxidation5
Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors5
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization5
Analog performance of GaN/AlGaN high-electron-mobility transistors5
Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs5
Custom measurement system for memristor characterisation5
Light-induced nonvolatile resistive switching in Cs0.15FA0.85PbI3-XBrX perovskite-based memristors5
Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations5
Improved interface characteristics of Mo/4H-SiC schottky contact5
Influence of variability on the performance of HfO2 memristor-based convolutional neural networks5
Palladium selenide as cathode for dye-sensitized solar cell: Effect of palladium content5
Combined effects of NH3 and NF3 post plasma treatment on the performance of spray coated ZnO thin film transistors5
The effect of edge-terminated structure for lateral AlGaN/GaN Schottky barrier diodes with gated ohmic anode5
Study of RTN signals in resistive switching devices based on neural networks5
High-power electro-mechanical behavior of a capacitive microwave power sensor with warped cantilever beam5
Thin-film transistor accumulation-mode modeling4
Structure evolution and charge hysteresis in buried Hafnia-Alumina oxides4
Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact4
Highly stable GaN-based betavoltaic structures grown on different dislocation density substrates4
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines4
Applicability of Sc2O3 versus Al2O3 in MIM rectifiers for IR rectenna4
Performance of FDSOI double-gate dual-doped reconfigurable FETs4
Drift of the sensitive direction of Hall-effect devices in (1 0 0)-silicon caused by mechanical shear stress4
A dynamic current hysteresis model for IGZO-TFT4
Influence of interface traps density and temperature variation on the NBTI effect in p-Type junctionless nanowire transistors4
Degradation study of carrier selective contact silicon solar cells with ageing: Role of silicon surface morphology4
Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors4
All inorganic and transparent ITO/boehmite/ITO structure by one-step synthesis method for flexible memristor4
Physical parameters based analytical I-V model of long and short channel a-IGZO TFTs4
Structural design and experimental analysis for AlN Lamb-wave resonators with different electrical boundary conditions4
Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures4
Efficient atomistic simulations of lateral heterostructure devices with metal contacts4
Assessment of paper-based MoS2 FET for Physically Unclonable Functions4
Experimental and simulation investigation of the out-of-equilibrium phenomena on the pseudo-MOSFET configuration under transient linear voltage ramps4
Cryogenic characterization and modeling of a CMOS floating-gate device for quantum control hardware4
Superiority of core–shell junctionless FETs4
PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin AlGaN barrier4
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors4
Hierarchical modeling for TCAD simulation of short-channel 2D material-based FETs4
Investigating interface states and oxide traps in the MoS2/oxide/Si system4
Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices4
Electrical characteristics of n-type vertically stacked nanowires operating up to 600 K4
Mobility degradation in 4H-SiC MOSFETs and interfacial formation of carbon clusters4
A novel methodology for neural compact modeling based on knowledge transfer4
On-chip adaptive matching learning with charge-trap synapse device and ReLU activation circuit4
Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs4
A breakdown model of LDMOS optimizing lateral and vertical electric field to improve breakdown voltage by multi-ring technology4
Study of parasitic oscillation of a multi-chip SiC MOSFET circuit based on a signal flow graph model by TCAD simulation4
Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications4
Low-temperature deuterium annealing to improve performance and reliability in a MOSFET4
Architecture optimization of SPAD integrated in 28 nm FD-SOI CMOS technology to reduce the DCR4
Pragmatic Z2-FET compact model including DC and 1T-DRAM memory operation4
Barium titanate nanorods on micro-machined silicon substrate for performance enhancement of piezoelectric Nanogenerators (NGs)4
Channel mobility and contact resistance in scaled ZnO thin-film transistors4
A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier4
Modeling OFF-state harmonics in MOS transistors used as RF switches4
Demonstration of an n-ZnO/p-Si/n-Si heterojunction bipolar phototransistor for X-ray detection4
Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate4
Channel doping effects in negative capacitance field-effect transistors4
The mechanism of defects effect on carrier transport by employing multi-wavelength sub-bandgap lights on CdZnTe crystal4
Demonstration and characterization of 500 V MIM capacitor with Al2O3 dielectric layer for power integrated circuits4
The core-shell junctionless MOSFET4
Evidence of ferroelectric HfO2 phase transformation induced by electric field cycling observed at a macroscopic scale4
Finite element modeling of spin–orbit torques4
Harnessing the unique features of FDSOI CMOS technology in fibreoptic, millimetre-wave, and quantum computing circuits from 2 K to 400 K4
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C4
Robust cryogenic ab-initio quantum transport simulation for LG = 10 nm nanowire4
Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures4
Heat sink implementation in back-end of line for self-heating reduction in 22 nm FDSOI MOSFETs4
Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations4
Extraction of small-signal equivalent circuit for de-embedding of 3D vertical nanowire transistor3
Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs3
Ab initio study of electron mobility in V23
Competition between heating and cooling during dynamic self-heating degradation of amorphous InGaZnO thin-film transistors3
Influence of γ-irradiation and ultrasound treatment on current mechanism in 3
Enhanced statistical detection of random telegraph noise in frequency and time domain3
On the diffusion current in a MOSFET operated down to deep cryogenic temperatures3
Characteristic function approach to analytical parameter extraction, verification, and circuit calibration for small-signal equivalent circuit of field effect transistors3
Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices3
Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations3
A BIMOS-based 2T1C analogue spiking neuron circuit integrated in 28 nm FD-SOI technology for neuromorphic application3
Evidence of trapping and electrothermal effects in vertical junctionless nanowire transistors3
Recovering the carrier number conservation in SPICE simulation of PIN diodes and IGBT devices3
Phase-change memory electro-thermal analysis and engineering thanks to enhanced thermal confinement3
Design of RRAM with high storage capacity and high reliability for IoT applications3
Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies3
Initial synaptic weight distribution for fast learning speed and high recognition rate in STDP-based spiking neural network3
Influence of sub-band gap density of states on the electrical performance of amorphous SiZnSnO thin film transistor3
Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design3
A novel SOI-LDMOS with field plate auxiliary doping layer that has improved breakdown voltage3
TCAD simulations of FDSOI devices down to deep cryogenic temperature3
Massively parallel FDTD full-band Monte Carlo simulations of electromagnetic THz pulses in p-doped silicon at cryogenic temperatures3
Mechanism of Proton-Induced electrical degradation of AlGaN/GaN high electron mobility transistors3
Non-GCA modeling of near threshold I-V characteristics of DG MOSFETs3
Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme3
CARAT – A reliability analysis framework for BTI-HCD aging in circuits3
Characterization of the defect density states in MoOx for c-Si solar cell applications3
Stability and Vmin<3
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions3
DFT-based layered dielectric model of few-layer MoS23
Interface effects in ultra-scaled MRAM cells3
SPICE compatible semi-empirical compact model for ferroelectric hysteresis3
Structural properties of Ge-Sb-Te alloys3
On the feasibility of DoS-engineering for achieving sub-60 mV subthreshold slope in MOSFETs3
Frequency doubler based on unipolar thin-film-transistor technologies3
Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments3
Temperature optimization for AlGaN/GaN HEMT with the etched AlGaN layer based on 2-D thermal model3
490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics3
Role of temperature, MTJ size and pulse-width on STT-MRAM bit-error rate and backhopping3
Cryogenic characteristics of UTBB SOI Schottky-Barrier MOSFETs3
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