Microelectronics Reliability

Papers
(The H4-Index of Microelectronics Reliability is 23. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-12-01 to 2025-12-01.)
ArticleCitations
Boosting the thermal stability of paralleled GaAs HBTs through temperature-dependent ballasting resistors: A proof-of-concept study92
Interface traps in the sub-3 nm technology node: A comprehensive analysis and benchmarking of negative capacitance FinFET and nanosheet FETs - A reliability perspective from device to circuit level89
Calibration methods and power cycling of double-side cooled SiC MOSFET power modules57
Aging investigation of the latest standard dual power modules using improved interconnect technologies by power cycling test39
Editorial Board38
Editorial Board37
Failure analysis on capacitor failures using simple circuit edit passive voltage contrast method31
Reliability assessment of miniaturised electromechanical RF relays for space applications31
Correlative multimodal imaging and targeted lasering for automated high-precision IC decapsulation30
New reliability model for power SiC MOSFET technologies under static and dynamic gate stress29
Study on annealing effect of bipolar transistors at different temperatures after total dose irradiation28
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress28
A Π-shaped p-GaN HEMT for reliable enhancement mode operation28
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation26
Breakdown voltage and TDDB performance improvement by optimizing the PECVD dielectric film characteristics in MIM capacitors26
Effect of solder junction void variation in power semiconductor package on power cycle lifetime26
Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditions26
Effect of high-temperature storage on the thermal conductivity of Cu nanoparticles/Bi-Sn hybrid bonding25
Electrical deterioration of 4H-SiC MOS capacitors due to bulk and interface traps induced by proton irradiation25
The characterization of low-k thin films and their fracture analysis in a WLCSP device25
Effect of microstructural variability on fatigue simulations of solder joints24
Multistate time lag dynamic Bayesian networks model for reliability prediction of smart meters24
Modeling of the impact of mechanical stress resulted from wafer probing and wire bonding on circuit under pad24
Current balancing of parallel-connected silicon carbide (SiC) MOSFET power devices using peak detection via PCB sensors23
Elucidating the large variation in ion diffusivity of microelectronic packaging materials23
0.088418960571289