Microelectronics Reliability

Papers
(The H4-Index of Microelectronics Reliability is 25. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-05-01 to 2026-05-01.)
ArticleCitations
Multistate time lag dynamic Bayesian networks model for reliability prediction of smart meters48
Elucidating the large variation in ion diffusivity of microelectronic packaging materials46
Single event burnout failures caused in silicon and silicon carbide power devices by single alpha particles emitted from radioactive nuclides42
Evaluating switch lifetime in soft-switched single-stage differential-mode SST35
Interface traps in the sub-3 nm technology node: A comprehensive analysis and benchmarking of negative capacitance FinFET and nanosheet FETs - A reliability perspective from device to circuit level34
A Π-shaped p-GaN HEMT for reliable enhancement mode operation34
Editorial Board33
Reliability assessment of miniaturised electromechanical RF relays for space applications33
Correlative multimodal imaging and targeted lasering for automated high-precision IC decapsulation32
New reliability model for power SiC MOSFET technologies under static and dynamic gate stress31
Laser voltage probing and simulation of a flip-flop with undesired quasi-static switching31
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation31
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress31
DC and RF/analog performances of split source horizontal pocket and hetero stack TFETs considering interface trap charges: A simulation study29
Effect of solder junction void variation in power semiconductor package on power cycle lifetime28
Study on annealing effect of bipolar transistors at different temperatures after total dose irradiation28
Editorial Board28
The characterization of low-k thin films and their fracture analysis in a WLCSP device27
Failure analysis on capacitor failures using simple circuit edit passive voltage contrast method27
Boosting the thermal stability of paralleled GaAs HBTs through temperature-dependent ballasting resistors: A proof-of-concept study26
A physics-based electromigration model for advanced interconnects26
Electrical deterioration of 4H-SiC MOS capacitors due to bulk and interface traps induced by proton irradiation25
A remaining useful life prediction method of aluminum electrolytic capacitor based on wiener process and similarity measurement25
Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditions25
Impacts and mitigation strategies of process-induced packaging defects for enhancing reliability of power devices25
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