Microelectronics Reliability

Papers
(The H4-Index of Microelectronics Reliability is 23. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)
ArticleCitations
Single event burnout failures caused in silicon and silicon carbide power devices by single alpha particles emitted from radioactive nuclides88
Boosting the thermal stability of paralleled GaAs HBTs through temperature-dependent ballasting resistors: A proof-of-concept study88
Microstructure evolution and mechanical behavior of copper through‑silicon via structure under thermal cyclic loading55
Design optimization of a packaged thermoelectric generator for electrically active implants38
Investigation of microstructure, thermal properties, and mechanical performances of Ni-added Sn-5.0Sb-0.5Cu/Cu solder joints37
Influence of phosphorus diffusion on the SiO2/4H-SiC (0001) interface during poly gate formation process36
A Π-shaped p-GaN HEMT for reliable enhancement mode operation31
DC and RF/analog performances of split source horizontal pocket and hetero stack TFETs considering interface trap charges: A simulation study29
Simulation assessment of solder joint reliability for fully assembled printed circuit boards29
Investigating the solder mask defects impact on leakage current on PCB under condensing humidity conditions29
Breakdown voltage and TDDB performance improvement by optimizing the PECVD dielectric film characteristics in MIM capacitors29
Effect of solder junction void variation in power semiconductor package on power cycle lifetime26
Highly reliable Cu Cu low temperature bonding using SAC305 solder with rGO interlayer26
Effect of high-temperature storage on the thermal conductivity of Cu nanoparticles/Bi-Sn hybrid bonding26
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation26
Electrical deterioration of 4H-SiC MOS capacitors due to bulk and interface traps induced by proton irradiation26
The characterization of low-k thin films and their fracture analysis in a WLCSP device25
Modeling of the impact of mechanical stress resulted from wafer probing and wire bonding on circuit under pad25
Optical characterizations of “P-down” bonded InP pump lasers24
Multistate time lag dynamic Bayesian networks model for reliability prediction of smart meters24
DNN-based error level prediction for reducing read latency in 3D NAND flash memory24
Effect of microstructural variability on fatigue simulations of solder joints24
A physics-based electromigration model for advanced interconnects23
Laser voltage probing and simulation of a flip-flop with undesired quasi-static switching23
Current balancing of parallel-connected silicon carbide (SiC) MOSFET power devices using peak detection via PCB sensors23
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