Microelectronics Journal

Papers
(The H4-Index of Microelectronics Journal is 21. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-04-01 to 2024-04-01.)
ArticleCitations
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study51
Characterization and optimization of junctionless gate-all-around vertically stacked nanowire FETs for sub-5 nm technology nodes45
Comparing bulk-Si FinFET and gate-all-around FETs for the 5 ​nm technology node36
Power optimized SRAM cell with high radiation hardened for aerospace applications35
DNA encoding for RGB image encryption with memristor based neuron model and chaos phenomenon34
Design of photonic crystal based compact all-optical 2 × 1 multiplexer for optical processing devices34
A review on emerging negative capacitance field effect transistor for low power electronics33
Simulation study on ferroelectric layer thickness dependence RF/Analog and linearity parameters in ferroelectric tunnel junction TFET29
Si-based MEMS resonant sensor: A review from microfabrication perspective28
Performance comparison of CNN, QNN and BNN deep neural networks for real-time object detection using ZYNQ FPGA node26
Investigation of DC, RF and linearity performances of a back-gated (BG) heterojunction (HJ) TFET-on-selbox-substrate (STFET): Introduction to a BG-HJ-STEFT based CMOS inverter25
RF & linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric25
New electronically adjustable memelement emulator for realizing the behaviour of fully-floating meminductor and memristor24
Modeling the threshold voltage of core-and-outer gates of ultra-thin nanotube Junctionless-double gate-all-around (NJL-DGAA) MOSFETs24
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM24
Insights into the operation of negative capacitance FinFET for low power logic applications22
A biomorphic neuroprocessor based on a composite memristor-diode crossbar22
Performance analysis of optimized plasmonic half-adder circuit using Mach-Zehnder interferometer for high-speed switching applications21
A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology21
Performance analysis of silicon nanotube dielectric pocket Tunnel FET for reduced ambipolar conduction21
FinFET based SRAMs in Sub-10nm domain21
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