OOIR: Observatory of International Research

Papers

(The H4-Index of Microelectronics Journal is 20. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)

Article	Citations
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study	62
Characterization and optimization of junctionless gate-all-around vertically stacked nanowire FETs for sub-5 nm technology nodes	49
A review on emerging negative capacitance field effect transistor for low power electronics	42
Comparing bulk-Si FinFET and gate-all-around FETs for the 5 nm technology node	41
Design of photonic crystal based compact all-optical 2 × 1 multiplexer for optical processing devices	40
New electronically adjustable memelement emulator for realizing the behaviour of fully-floating meminductor and memristor	32
Performance analysis of silicon nanotube dielectric pocket Tunnel FET for reduced ambipolar conduction	28
FinFET based SRAMs in Sub-10nm domain	27
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM	27
RF & linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric	26
Ge/Si interfaced label free nanowire BIOFET for biomolecules detection - analytical analysis	25
A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology	25
Modeling the threshold voltage of core-and-outer gates of ultra-thin nanotube Junctionless-double gate-all-around (NJL-DGAA) MOSFETs	24
Gaussian Mixture Model classifier analog integrated low-power implementation with applications in fault management detection	23
Negative drain-induced barrier lowering and negative differential resistance effects in negative-capacitance transistors	22
Numerical assessment of dielectrically-modulated short- double-gate PNPN TFET-based label-free biosensor	22
A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications	22
Spin field effect transistors and their applications: A survey	21
Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor	21
A novel ultra-low-power CNTFET and 45 nm CMOS based ternary SRAM	20