Japanese Journal of Applied Physics

Papers
(The H4-Index of Japanese Journal of Applied Physics is 22. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-04-01 to 2024-04-01.)
ArticleCitations
Physical reservoir computing—an introductory perspective197
Recent advances and future prospects in energy harvesting technologies69
Review on ferroelectric/polar metals53
InGaN-based red light-emitting diodes: from traditional to micro-LEDs44
Beyond silicene: synthesis of germanene, stanene and plumbene39
Advances in color-converted micro-LED arrays38
Review of plasma-based water treatment technologies for the decomposition of persistent organic compounds37
High-NA EUV lithography: current status and outlook for the future35
Effect of field cooling AC poling on electrical and physical properties for Pb(Mg1/3Nb2/3)O3-PbTiO3-based single crystals manufactured by a continuous-feedi30
Design and characterization of a low-optical-loss UV-C laser diode30
Photoelectron Momentum Microscope at BL6U of UVSOR-III synchrotron29
A possible origin of the large leakage current in ferroelectric Al1−x Sc x N films29
Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs27
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism26
Recent progress of Ga2O3 power technology: large-area devices, packaging and applications26
Enhanced electric property of relaxor ferroelectric crystals with low AC voltage high-temperature poling25
Impact of atmospheric pressure plasma treated seeds on germination, morphology, gene expression and biochemical responses25
High-performance surface acoustic wave devices using composite substrate structures24
On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films24
Recent progress in ferromagnetic semiconductors and spintronics devices24
A spurious-free, steep band rejection filter using a LiTaO3/quartz heteroacoustic layer surface acoustic wave resonator24
Fabrication and characterization of CH3NH3PbI3 solar cells with added guanidinium and inserted with decaphenylpentasilane23
GaN substrates having a low dislocation density and a small off-angle variation prepared by hydride vapor phase epitaxy and maskless-3D22
Future of 300 GHz band wireless communications and their enabler, CMOS transceiver technologies22
Cold sintering, enabling a route to co-sinter an all-solid-state lithium-ion battery22
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