OOIR: Observatory of International Research

Papers

(The H4-Index of Japanese Journal of Applied Physics is 24. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-06-01 to 2026-06-01.)

Article	Citations
Compact empirical tight-binding models for the conduction band of 4H-SiC considering the floating nature of electronic states	118
Feature correlation method for image reconstruction evaluation in under-sampled scanning probe microscopy	97
Characterization of larger-single-Lorentzian noise deviated from 1/f characteristics detected by a power-spectral-density-integration method	83
Controlling the structure and composition of SnO₂-based thin film with reactive sputtering to improve the sensitivity of semiconductor CO₂ sensor	52
Superior device characteristics of needle-contact Ge Schottky barrier diodes for low-power applications	51
Analysis of multimode radiation from 0.4 THz backward wave oscillator	49
Thermochromism and thermal crystal structure evolution of YIn_0.9Mn_0.1O₃	48
Neural activity analysis of depressive disorder model mice using the Toyohashi probe	38
Thermal stability enhancement in perovskite solar cells using W-doped ZnO/single crystalline anatase TiO₂ nanoparticle bilayer	37
Comprehensive investigations on defects’ stability caused lateral charge loss in Ti-doped 3D NAND	37
Extension of measurement range in optical correlation-domain reflectometry based on temporal gating scheme	36
Vicinal GaAs(111)B substrates suppress rotational domains in InSe van der Waals epitaxy	33
Characterization of perovskite films prepared with different PbI₂ deposition rates	32
Si-based mid-infrared photodetector with dynamic Schottky barrier height modulation applicable for synchronous detection	31
Evaluation of optical constants in oxide thin films using machine learning	29
The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure	28
Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001)	27
Bubble cavitation generation near blood vessel walls using amplitude-modulated wave irradiation	27
Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors	27
Self-aligned patterning on β-Ga₂O₃ substrates via backside-exposure photolithography	26
Two-dimensional analytical model for fully depleted SOI MOSFETs with vertical trapezoid doping including effects of the interface trapped charges	26
Theoretical consideration for challenges associated with cell scaling of charge trap memory: reduction in electron capture efficiency and increase in blocking dielectric leakage	25
Non-contact identification of moisture content of fabric based on analysis of broadband acoustic signals using multiple-frequency air ultrasonic transducer system	25
X-ray diffuse scattering and polar nanoregion of a relaxor ferroelectric under electric field	25
Reaction kinetics studies for phenol degradation under the impact of different gas bubbles and pH using gas–liquid discharge plasma	24

Unipolar polarization switching and high-endurance memory operation of HZO/Si anti-ferroelectric FETs