Japanese Journal of Applied Physics

Papers
(The H4-Index of Japanese Journal of Applied Physics is 24. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)
ArticleCitations
Compact empirical tight-binding models for the conduction band of 4H-SiC considering the floating nature of electronic states122
Feature correlation method for image reconstruction evaluation in under-sampled scanning probe microscopy98
Characterization of larger-single-Lorentzian noise deviated from 1/f characteristics detected by a power-spectral-density-integration method85
Controlling the structure and composition of SnO2-based thin film with reactive sputtering to improve the sensitivity of semiconductor CO2 sensor52
Superior device characteristics of needle-contact Ge Schottky barrier diodes for low-power applications51
Analysis of multimode radiation from 0.4 THz backward wave oscillator46
Thermochromism and thermal crystal structure evolution of YIn0.9Mn0.1O341
Neural activity analysis of depressive disorder model mice using the Toyohashi probe40
Comprehensive investigations on defects’ stability caused lateral charge loss in Ti-doped 3D NAND39
Extension of measurement range in optical correlation-domain reflectometry based on temporal gating scheme38
Characterization of perovskite films prepared with different PbI2 deposition rates34
Si-based mid-infrared photodetector with dynamic Schottky barrier height modulation applicable for synchronous detection33
Evaluation of optical constants in oxide thin films using machine learning29
The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure29
Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001)27
Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors27
Bubble cavitation generation near blood vessel walls using amplitude-modulated wave irradiation27
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography26
X-ray diffuse scattering and polar nanoregion of a relaxor ferroelectric under electric field26
Theoretical consideration for challenges associated with cell scaling of charge trap memory: reduction in electron capture efficiency and increase in blocking dielectric leakage26
Unipolar polarization switching and high-endurance memory operation of HZO/Si anti-ferroelectric FETs25
Reaction kinetics studies for phenol degradation under the impact of different gas bubbles and pH using gas–liquid discharge plasma24
Study on statistical analysis of optical phase control by surface-stabilized ferroelectric liquid crystal devices24
Prototyping of microelectrode devices applied by transfer printing24
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