Japanese Journal of Applied Physics

Papers
(The H4-Index of Japanese Journal of Applied Physics is 24. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-05-01 to 2026-05-01.)
ArticleCitations
Compact empirical tight-binding models for the conduction band of 4H-SiC considering the floating nature of electronic states114
Feature correlation method for image reconstruction evaluation in under-sampled scanning probe microscopy96
Characterization of larger-single-Lorentzian noise deviated from 1/f characteristics detected by a power-spectral-density-integration method82
Controlling the structure and composition of SnO2-based thin film with reactive sputtering to improve the sensitivity of semiconductor CO2 sensor51
Superior device characteristics of needle-contact Ge Schottky barrier diodes for low-power applications50
Analysis of multimode radiation from 0.4 THz backward wave oscillator49
Thermochromism and thermal crystal structure evolution of YIn0.9Mn0.1O348
Pressure-controlled magnetic soft actuator with local stiffness modulation via tapered tube buckling37
Thermal stability enhancement in perovskite solar cells using W-doped ZnO/single crystalline anatase TiO2 nanoparticle bilayer36
Neural activity analysis of depressive disorder model mice using the Toyohashi probe36
Comprehensive investigations on defects’ stability caused lateral charge loss in Ti-doped 3D NAND34
Comparison of spin Hall angles measured by spin accumulation, spin–orbit torque, and spin Hall magnetoresistance32
Extension of measurement range in optical correlation-domain reflectometry based on temporal gating scheme32
Multilayered inverted polymer-based light emitting diodes fabricated by meniscus coating and transfer-printing technique30
Effect of oxygen content in CuO x nanofilms on chloride ion detection for ion sensor applications30
A high-efficiency and wide-load current range LDO with dynamic loop gain control technique28
Buried annealed proton-exchanged waveguide in periodically-poled MgO:LiTaO3 fabricated by surface-activated bonding for high-power wavelength conversion27
Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure26
Comprehensive analysis of determining factors of the effective work function of TiAlC/TiN metal gates for advanced gate-all-around CMOS integration26
Influence of unique behaviors in an atomic switch operation on hardware-based deep learning26
Piezoelectric MEMS-based physical reservoir computing system without time-delayed feedback26
Formation of condensed CHF 3 layer on SiO 2 film at cryogenic temperatures for etching process app26
Heterogeneously integrated IGZTO–CMOS neuromorphic CIM achieving 34.8 TOPS W −1 and 87.7 fJ write energy25
Vicinal GaAs(111)B substrates suppress rotational domains in InSe van der Waals epitaxy24
Effect of opposite phase AC voltage application using dual power supplies on thrust and induced flow of plasma actuator24
Blood flow visualization using a ConvLSTM-based deep learning clutter filter24
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