IEEE Transactions on Nuclear Science

Papers
(The H4-Index of IEEE Transactions on Nuclear Science is 21. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)
ArticleCitations
Radiation Effects in a Post-Moore World61
Scaling Trends of Digital Single-Event Effects: A Survey of SEU and SET Parameters and Comparison With Transistor Performance56
Radiation Effects in AlGaN/GaN HEMTs50
Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors41
A Reconfigurable Neural Network ASIC for Detector Front-End Data Compression at the HL-LHC36
Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs36
GAMMA: A 16-Channel Spectroscopic ASIC for SiPMs Readout With 84-dB Dynamic Range32
Radiation Effects in Advanced and Emerging Nonvolatile Memories31
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies30
The MiniSDD-Based 1-Mpixel Camera of the DSSC Project for the European XFEL30
TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses29
How Reduced Data Precision and Degree of Parallelism Impact the Reliability of Convolutional Neural Networks on FPGAs29
0.1–10 MeV Neutron Soft Error Rate in Accelerator and Atmospheric Environments27
Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications27
Ion-Induced Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices26
High Energy and Thermal Neutron Sensitivity of Google Tensor Processing Units24
SIRIO: A High-Speed CMOS Charge-Sensitive Amplifier for High-Energy-Resolution X-γ Ray Spectroscopy With Semiconductor Detectors23
Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art23
Impact of Single-Event Upsets on Convolutional Neural Networks in Xilinx Zynq FPGAs23
L₁-Adaptive Robust Control Design for a Pressurized Water-Type Nuclear Power Plant23
Application of Total Ionizing Dose Radiation Test Standards to SiC MOSFETs22
Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs21
Operating Temperature Range of Phosphorous-Doped Optical Fiber Dosimeters Exploiting Infrared Radiation-Induced Attenuation21
Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors21
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