OOIR: Observatory of International Research

Papers

(The TQCC of IEEE Transactions on Electron Devices is 8. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-10-01 to 2025-10-01.)

Article	Citations
Utilizing Valley–Spin Hall Effect in Monolayer WSe₂ for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops	165
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform	128
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator	95
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors	94
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron	87
Changes in the Editorial Board	79
IEEE Transactions on Electron Devices information for authors	71
IEEE Transactions on Electron Devices publication information	71
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors	68
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency	62
Improved Performance of MoS₂ Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO₂/Al₂O₃	62
Orientation Polarization Effect in Al₂O₃/Hydrogen-Terminated Diamond MISFETs	59
Cyclotron Resonance Maser With Zigzag Quasi-Optical Transmission Line: Concept and Modeling	56
A 0.35-THz Extended Interaction Oscillator Based on Overmoded and Bi-Periodic Structure	56
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs	55
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs	54
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements	54
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs	54
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT	53
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores	52
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs	52
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”	52
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates	51
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material	51
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor	51

Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals	50
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor	49
Accurate and Efficient Algorithm for Computing Structure Functions From the Spatial Distribution of Thermal Properties in Electronic Devices	49
Temperature-Dependent Dynamic R_on of GaN E-HEMTs: The Impact of p-GaN Drain	49
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study	48
A Physics-Based Compact Model for Silicon Cold-Source Transistors	48
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors	48
Preparation of Dome-Shaped SiO₂/Al₂O₃ Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules	47
Modeling and Analysis of Terminal Capacitances in High-Power Devices: Application to p-GaN Gate HEMTs	45
Compact Modeling of Impact Ionization in High-Voltage Devices	45
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate	45
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors	45
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs	45
First Experimental Demonstration of TiN_xO_y Resistive Field Plate on p-GaN HEMTs Wi	44
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp	44
Compact E-Band Sheet Beam Folded Waveguide Traveling Wave Tube for High Data Rate Communication	44
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices	44
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy	43
Physical Compact Model for Source-Gated Transistors for DC Application	43
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures	43
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen	43
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing	43
Table of Contents	42
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect	42
Spontaneously Oxidized Cu_xO/β-Ga₂O₃ p-n Junction for Self-Powered Deep-Ultraviolet Photodetection	41
Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects	41
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell	40
BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced Modeling	40
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time	39
Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”	39
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization	39
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W	39
Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification	39
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization	38
Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H₂S Gas Sensor for Oil and Gas Industry	38
Alpha Particle Detection Using Highly Rectifying Ni/Ga₂O₃/4H-SiC Heteroepitaxial MOS Junction	38
Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation	38
Highly Efficient Gyrotron Mode Converter With a Launcher Changing Angular Spectrum of the Operating Mode	37
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO₃	37
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation	37
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs	37
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective	36
Plasma Jet Printing: An Introduction	36
Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS₂/TiO₂ Bilayer	36
Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors	36
Performance Enhancement of Thin-Film Transistor Based on In₂O₃:F/In₂O₃ Homojunction	36
Defect-Engineered Resistive Switching in van der Waal Metals	35
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field	35
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness	35
Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application	35

Sigmoid Probabilistic Bits Using SiOₓ Threshold Switching Devices for Probabilistic Computing	35
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs	34
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes	34
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors	34
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing	34
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress	34
Stack Optimization of TiO _x -Based Resistive Switching Devices Through Interface Engineering	34
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device	34
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing	34
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs	34
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation	34
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors	33
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing	33
Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor	33
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂	33
Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature	33
Peak Response Wavelength Tunable 4H-SiC UV Detector Covering Near-Ultraviolet Region With High-Temperature Stability and Radiation Hardness	32
Effect of X-Ray Irradiation on Colloidal Quantum Dot SWIR CMOS Image Sensor	32
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator	32
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol	32
IEEE Transactions on Electron Devices Publication Information	32
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT	32
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain	32
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration	32
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch	32
TiO₂ Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells	32
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop	32
Linear Error Correction Codec Implementation Based on an In-Memory Computing Architecture for Nonvolatile Memories	31
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines	31
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet	31
Grating Perovskite Enhanced Polarization-Sensitive GaAs-Based Photodetector	31
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress	31
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings	31
Optimized Design of W-Band High-Power Folded-Waveguide Traveling-Wave Tube	31
Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs	31
Complementary Vacuum Field Emission Transistor	31
Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing	31
Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory	31
Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge₂Sb₂Te₃S₂	31
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying V_G/V_D Stress in GAA Nanosheet PFETs	31
Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET	30
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration	30
Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact	30
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness	30
Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors	29
Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs	29
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition	29
Implementing a Ternary Inverter Using Dual-Pocket Tunnel Field-Effect Transistors	29
Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals	29
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension	29
L-Cysteine Functionalized Al_0.18Ga_0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection	29
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory	29
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study	29
Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory	29
Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si	29
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode	29
Design and Experiment of 1 THz Slow Wave Structure Fabricated by Nano-CNC Technology	28
High-Throughput Screening Ferroelectric–Dielectric Heterostructure for Robust Memristor and Artificial Synapse	28
Metamaterial-Inspired 0.22 THz Traveling-Wave Tubes With Double Sheet Beams	28
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence	28
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C	28
Design of High-Sensitivity Piezoelectric Micromachined Ultrasonic Transducer Based on Single-Crystal Lithium Niobate Thin Films	28
Partial Recovery of Dynamic R _ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs	28
High Switching Speed and Stability ECM STO Resistive Memory on n⁺-Si Substrate Realized Using Cu Filament Mechanism	28
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs	28
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment	28
Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum	27
IEEE ELECTRON DEVICES SOCIETY	27
Multiscale Modeling of Self-Heating-Induced and Deformation-Accelerated Dielectric Traps Impacting Critical Path of Dielectric Breakdown in 5-nm Stacked Nanosheet FET	27
Enhancing Optical Performance for White Light-Emitting Diodes Using Quantum- Dots/Boron Nitride Hybrid Reflective Structure	27
Low-Power Ultradeep-Submicrometer Junctionless Carbon Nanotube Field-Effect Diode	27
Event-Driven CsPbBr₃ Perovskite Visual Neurons for Motion Direction Recognition in Low-Light Scenes	27
IEEE Transactions on Electron Devices Information for Authors	27
TechRxiv: Share Your Preprint Research with the World!	27
Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture	27
Optimization of a Cusp Gun With a Grid for a Terahertz Gyrotron Traveling-Wave Amplifier	27
SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration	27
Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format	27
IEEE ELECTRON DEVICES SOCIETY	27
IEEE Transactions on Electron Devices information for authors	27

Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]	27
Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept	27
Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations	27
Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether	26
High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors	26
Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage	26
Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit	26
Resistive Switching Characteristics of HfO_x-Based Memristor by Inserting GeTe Layer	26
A Novel Electron Gun Design Approach With an Externally Assembled Anode	26
Impacts of SiO₂-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers	26
Neuromorphic System Using Crosspoint-Type TaO _x /Ta Memristors and Direct Device Training for Associative Memory	26
Enhanced Resistive Switching Performances of Mn-Doped BiFeO₃ Memristor by Introducing Oxygen Reservoir Interface	26
Improved Scalability of Negative Capacitance Junctionless Transistors With Underlap Design	25
Investigation on Degradation of 1200-V Planar and Trench SiC MOSFET Under Surge Current Stress of Body Diode	25
Plateau Voltage and Dynamic Capacitance Effect on SiC MOSFETs’ Gate Ringing	25
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter	25
Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application	25
Impact of Nonuniform Ozone Anneal Treatment on the Resistance Levels in an IGZO-ReRAM Fabricated on ITO-Coated Glass Substrate	25
A Cross-Band High-Power Microwave Generator With Wide Frequency Tunability Based on a Relativistic Magnetron and a Radial Transit-Time Oscillator	25
Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling	25
Tandem Evaluation of AlN/β - and ε-Ga₂O₃ Tri-Gate MOSHEMTs	25
A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance	25
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors	25
Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients	25
A Finite Element Analysis for Vacuum Amplifier Electron Gun of Fine Pencil Beam	25
High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates	25
Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA	25
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs	25
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs	25
Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences	25
Thermionic Electron Emission Capacity of the Ba₃ScGa₂O₇.₅ Impregnated Cathode	24
Blank Page	24
Novel Low-Loss 0.65-THz Multisectional Folded Waveguide High-Frequency Circuit	24
IEEE Transactions on Electron Devices Information for Authors	24
Device-Level Thermal Analysis for Gallium Oxide Lateral Field-Effect Transistor	24
Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging	24
Characterization and Analysis of 4H-SiC Super Junction JFETs Fabricated by Sidewall Implantation	24
Online Junction Temperature Detection for IGBTs Using Voltage Rise Time	24
Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor	24
Design and Cold Test of a G-Band 10-kW-Level Pulse TE₀₁-Mode Gyrotron Traveling-Wave Tube	24
IEEE ELECTRON DEVICES SOCIETY	24
A Difference-Microvariation Solution and Analytical Model for Generic HEMTs	24
Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability	24
Investigation of a Low-Loss Transmission Structure for W-Band TWT	24
Cu–Cu Bonded Microbump Interconnects With a 10-μm Pitch for 3-D-Stacked Chiplets	24
An Easy-to-Fabricate Circular TE₂₁/TE₀₁ Mode Generator	24
Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution	24
IEEE Transactions on Electron Devices Information for Authors	24
Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High f_T of 2.09 GHz	24
Investigation of a Multibeam Magnetron Injection Gun for a W-Band Sectorial-Tunnel Gyro-TWT	24
Source-Drain Series Resistance Model for N-Stack Nanosheet FETs Using Transmission Line Matrix Method	23
Role of Channel Inversion in Ambient Degradation of Phosphorene FETs	23
Comprehensive Study of Improved Negative-Bias-Illumination-Temperature Stress Stability in Terbium-Doped Indium-Zinc-Oxide Thin-Film Transistors	23
Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations	23
Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers	23
High-Sensitivity Single-Walled Carbon Nanotube/Graphene/Al₂O₃/Ge Near-Infrared Photodetector	23
Evaluation of a Large Area, 83 μm Pixel Pitch Amorphous Selenium Indirect Flat Panel Detector	23
Control of Resistive Switching Endurance in TiO₂/TiO_2–x Memristors via Thermally Assisted Oxygen Plasma With Power Modulation	23
A Data-Driven Remaining Useful Life Prediction Method for Power MOSFETs Considering Nonlinear Dynamical Behaviors	23
Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate	23
Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency	23
Reliability of Advanced Nodes	23
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications	23
IEEE Transactions on Electron Devices Information for Authors	22
Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN	22
HfO₂–ZrO₂ Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance	22
Novel Enhance-Mode AlGaN/GaN JFET With BV of Over 1.2 kV Maintaining Low R _ON,sp	22
Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop	22
Design and Power Capacity Investigation of a Q-Band 100-kW-Continuous-Wave Gyro-TWT	22
Design and Development of Polarization-Enhanced E-Mode GaN p-FET and Complementary Logic (CL) Circuits	22
Improvement of Electron Gun Breakdown Performance Through Surface Flashover and Discharge Studies	22
Real-Time Ultraviolet Flame Detection System Based on 4H-SiC Phototransistor	22
A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN	22
An Analytical Model of RRAM Relaxation Effect and Its Application for Neural Network Weight Refresh Strategy in Large-Scale RRAM Array	22
The ESD Behavior of D-Mode GaN MIS-HEMT	22
Dielectrics for 2-D Electronics: From Device to Circuit Applications	22
Impact of Back-Gate Bias on the Total Ionizing Dose and Hot Carrier Injection Effects in Double SOI nMOSFETs	22
Highly Sensitive Free-Standing Waveguide-Integrated Bolometer on Germanium-on-Insulator Platform for Mid-Infrared On-Chip Spectroscopy	22
Study on Schottky Al_xGa_1-xN/GaN IMPATT Diodes for Millimeter-Wave Application	22
Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and Beyond	22
Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress	22
A Photoelectric Synergistically Excited Cold-Cathode High-Frequency Radiation Source: From GHz to THz	22
Self-Heating Mitigation of TreeFETs by Interbridges	22
Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases	22
Switching Dynamics of HfO₂–ZrO₂ Nanolaminates With Different Laminate Thicknesses	22
Thermal Dynamic of Single-Event Burnout in SiC Power MOSFETs	21
Bulk Field Effect Diode	21
A RepetitiveKu-Band Coaxial Relativistic Klystron Amplifier Packaged With Permanent Magnets	21
Multiport Relativistic Magnetron for Phased Array Application	21
Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure	21
Effect of Substrate Bias in Ohmic p-Gate GaN-HEMTs on Unclamped Inductive Switching Capability	21
1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination	21
Temperature-Dependent High Magnetoresistance in Zigzag Silicene Nanoribbon Heterostructure	21
Analysis of SiC NPN Ultraviolet Phototransistor Under Ultrahigh Temperature	21
Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition	21