IEEE Transactions on Electron Devices

Papers
(The TQCC of IEEE Transactions on Electron Devices is 7. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-07-01 to 2024-07-01.)
ArticleCitations
High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS104
Vertical β-Ga₂O₃ Power Transistors: A Review99
The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia99
Artificial Neural Network-Based Compact Modeling Methodology for Advanced Transistors91
FeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric86
Improved Photoresponse Performance of Self-Powered β-Ga₂O₃/NiO Heterojunction UV Photodetector by Surface Plasmonic Effect of Pt Nanoparticles84
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices83
(Ultra)Wide-Bandgap Vertical Power FinFETs78
Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions75
1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability74
Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits64
Design, Performance, and Defect Density Analysis of Efficient Eco-Friendly Perovskite Solar Cell62
Ferroelectric Field Effect Transistors as a Synapse for Neuromorphic Application62
Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)61
Laser-Induced Graphene Printed Wearable Flexible Antenna-Based Strain Sensor for Wireless Human Motion Monitoring58
Investigation of CsSn0.5Ge0.5I3-on-Si Tandem Solar Device Utilizing SCAPS Simulation54
Design Insights of Nanosheet FET and CMOS Circuit Applications at 5-nm Technology Node53
Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses52
Investigation of Carrier Transport Materials for Performance Assessment of Lead-Free Perovskite Solar Cells52
Infrared Colloidal Quantum Dot Image Sensors51
Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress48
Graphene/PtSe2/Pyramid Si van Der Waals Schottky Junction for Room-Temperature Broadband Infrared Light Detection47
Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor46
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I45
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking45
High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer43
“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs43
Compact Modeling of Temperature Effects in FDSOI and FinFET Devices Down to Cryogenic Temperatures43
Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs42
Encapsulated X-Ray Detector Enabled by All-Inorganic Lead-Free Perovskite Film With High Sensitivity and Low Detection Limit42
Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study42
A Review of Hot Carrier Degradation in n-Channel MOSFETs—Part I: Physical Mechanism42
1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current41
Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training41
Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen 40
Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃39
Low Thermal Budget (<250 °C) Dual-Gate Amorphous Indium Tungsten Oxide (IWO) Thin-Film Transistor for Monolithic 3-D Integration38
Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO₂ Electrode38
SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge37
Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior37
Soft-Error Resilient Read Decoupled SRAM With Multi-Node Upset Recovery for Space Applications37
Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics37
Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format37
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II37
Hydrothermal Synthesis and Improved CH₃OH-Sensing Performance of ZnO Nanorods With Adsorbed Au NPs36
Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions36
Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors36
Numerical Simulation: Design of High-Efficiency Planar p-n Homojunction Perovskite Solar Cells35
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization35
Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration35
Synergistic Modulation of Synaptic Plasticity in IGZO-Based Photoelectric Neuromorphic TFTs35
TCAD-Augmented Machine Learning With and Without Domain Expertise35
Characteristics of Stacked Gate-All-Around Si Nanosheet MOSFETs With Metal Sidewall Source/Drain and Their Impacts on CMOS Circuit Properties34
A Highly Scalable Junctionless FET Leaky Integrate-and-Fire Neuron for Spiking Neural Networks34
Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications33
Robust Breakdown Reliability and Improved Endurance in Hf0.5Zr0.5O2 Ferroelectric Using Grain Boundary Interruption33
Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs33
Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters33
A Unified PUF and TRNG Design Based on 40-nm RRAM With High Entropy and Robustness for IoT Security33
Enhanced Charge Extraction in Metal–Perovskite–Metal Back-Contact Solar Cell Structure Through Electrostatic Doping: A Numerical Study33
HRS Instability in Oxide-Based Bipolar Resistive Switching Cells33
Optimized Substrate for Improved Performance of Stacked Nanosheet Field-Effect Transistor33
Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD33
16 × 4 Linear Solar-Blind UV Photoconductive Detector Array Based on β-Ga2O3 Film32
Design and Characterization of an Aluminum Nitride-Based MEMS Hydrophone With Biologically Honeycomb Architecture32
Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices32
Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors32
Modeling of Short-Channel Effects in GaN HEMTs32
AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity32
Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing32
Exploration of Negative Capacitance in Gate-All-Around Si Nanosheet Transistors32
Hetero-Interfacial Thermal Resistance Effects on Device Performance of Stacked Gate-All-Around Nanosheet FET31
A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs31
Design Optimization Techniques in Nanosheet Transistor for RF Applications31
Evolution of Image Sensor Architectures With Stacked Device Technologies31
Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfZr₁₋O₂Capacitors31
Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs31
Modeling of Photovoltaic Solar Cell Based on CuSbS₂ Absorber for the Enhancement of Performance31
Highly Sensitive Narrowband Si Photodetector With Peak Response at Around 1060 nm31
Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiOx Gate Materials30
Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach30
Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode30
Enhanced Linearity in CBRAM Synapse by Post Oxide Deposition Annealing for Neuromorphic Computing Applications30
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs30
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part II: Mechanism and Modeling29
Advanced DFT–NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS2/WSe2 van der Waals Heterojunction TFET and WTe2/WS2 Meta29
BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update29
Investigation on Single Pulse Avalanche Failure of 1200-V SiC MOSFETs via Optimized Thermoelectric Simulation29
Stress Engineering as a Strategy to Achieve High Ferroelectricity in Thick Hafnia Using Interlayer29
Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs29
Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel29
FDTD-Based Optimization of Geometrical Parameters and Material Properties for GaAs-Truncated Nanopyramid Solar Cells29
Computational Investigation of Negative Capacitance Coaxially Gated Carbon Nanotube Field-Effect Transistors29
Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact29
A Review of Indirect Time-of-Flight Technologies28
Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory28
Study of a High-Performance Chemoresistive Ethanol Gas Sensor Synthesized With Au Nanoparticles and an Amorphous IGZO Thin Film28
CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications28
On the Trap Locations in Bulk FinFETs After Hot Carrier Degradation (HCD)28
Study on Multilevel Resistive Switching Behavior With Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM28
Revisiting the Time-Domain and Frequency-Domain Definitions of Capacitance28
Applying Conformal Mapping to Derive Analytical Solutions of Space-Charge-Limited Current Density for Various Geometries28
Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure28
Highly Sensitive Wearable Flexible Pressure Sensor Based on Conductive Carbon Black/Sponge28
SiC Trench MOSFET With Reduced Switching Loss and Increased Short-Circuit Capability27
Digital Performance Assessment of the Dual-Material Gate GaAs/InAs/Ge Junctionless TFET27
Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs27
Analysis of Self-Heating Effects in Multi-Nanosheet FET Considering Bottom Isolation and Package Options27
Advancing Monolayer 2-D nMOS and pMOS Transistor Integration From Growth to Van Der Waals Interface Engineering for Ultimate CMOS Scaling27
Technology, Assembly, and Test of a W-Band Traveling Wave Tube for New 5G High-Capacity Networks27
Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology27
Variability and Energy Consumption Tradeoffs in Multilevel Programming of RRAM Arrays27
Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs27
Active-Matrix Micro-LED Display Driven by Metal Oxide TFTs Using Digital PWM Method27
GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD27
Toward Automated Defect Extraction From Bias Temperature Instability Measurements27
Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process27
InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz27
A Comprehensive Study of Nanosheet and Forksheet SRAM for Beyond N5 Node26
RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays26
Hydrogen Diffusion and Threshold Voltage Shifts in Top-Gate Amorphous InGaZnO Thin-Film Transistors26
Reducing Power Consumption of Active-Matrix Mini-LED Backlit LCDs by Driving Circuit26
Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr1-x 26
Fabrication and Characterization of High-Voltage NiO/β-Ga2O3 Heterojunction Power Diodes26
Reduction of Process Variations for Sub-5-nm Node Fin and Nanosheet FETs Using Novel Process Scheme26
Analysis of the Ultrafast Transient Heat Transport in Sub 7-nm SOI FinFETs Technology Nodes Using Phonon Hydrodynamic Equation26
Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation26
Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension26
Oxygen Vacancy-Dependent Synaptic Dynamic Behavior of TiO x -Based Transparent Memristor26
Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation26
InAlN/GaN HEMT on Si With fmax = 270 GHz26
Direct Time-of-Flight Single-Photon Imaging26
Time Complexity of In-Memory Solution of Linear Systems26
Exceptional Responsivity (>6 kA/W) and Dark Current (<70 fA) Tradeoff of n-Ga2O3/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector26
0.5T0.5R—An Ultracompact RRAM Cell Uniquely Enabled by van der Waals Heterostructures26
MOSFETs on (110) C–H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization25
Design of High Robustness BNN Inference Accelerator Based on Binary Memristors25
Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown25
Accurate Computation of IGBT Junction Temperature in PLECS25
Investigation of a Highly Sensitive Au Nanoparticle-Modified ZnO Nanorod Humidity Sensor25
A Monolithic 3-D Integration of RRAM Array and Oxide Semiconductor FET for In-Memory Computing in 3-D Neural Network25
Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies25
Electro-Thermal Performance Boosting in Stacked Si Gate-all-Around Nanosheet FET With Engineered Source/Drain Contacts25
Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements25
Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method25
Compact Single-Phase-Search Multistate Content-Addressable Memory Design Using One FeFET/Cell25
Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films25
Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs25
MHz Repetition Frequency, Hundreds Kilowatt, and Sub-Nanosecond Agile Pulse Generation Based on Linear 4H-SiC Photoconductive Semiconductor25
Sensitivity Analysis of a Novel Negative Capacitance FinFET for Label-Free Biosensing24
Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs24
Heat Dissipation Enhancement of Phosphor-Converted White Laser Diodes by Thermally Self-Managing Phosphor-in-Glass24
Self-Activation Neural Network Based on Self-Selective Memory Device With Rectified Multilevel States24
Array-Level Programming of 3-Bit per Cell Resistive Memory and Its Application for Deep Neural Network Inference24
High-Performance Inverted Structure Broadband Photodetector Based on ZnO Nanorods/PCDTBT:PCBM:PbS QDs24
Bridging TCAD and AI: Its Application to Semiconductor Design24
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V G, V D} Bias Space: Implications and Peculiarities24
Ultrahighly Sensitive QCM Humidity Sensor Based on Nafion/MoS2 Hybrid Thin Film24
Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga2O3Deep-Ultraviolet Photodetector24
Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing24
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs24
Ga₂O₃/V₂O₅ Oxide Heterojunction Photovoltaic Photodetector With Superhigh Solar-Blind Spectral Discriminability24
Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications24
On DRAM Rowhammer and the Physics of Insecurity24
High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates24
Exploiting Carbon Nanotube FET and Magnetic Tunneling Junction for Near-Memory-Computing Paradigm24
Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors23
Noise-Resilient DNN: Tolerating Noise in PCM-Based AI Accelerators via Noise-Aware Training23
Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm223
Design and Investigation of Dielectrically Modulated Dual-Material Gate-Oxide-Stack Double-Gate TFET for Label-Free Detection of Biomolecules23
Memristor Based on TiO x /Al2O3 Bilayer as Flexible Artificial Synapse for Neuromorphic Electronics23
Comprehensive Variability Analysis in Dual-Port FeFET for Reliable Multi-Level-Cell Storage23
Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹23
Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process23
Low Temperature SoIC Bonding and Stacking Technology for 12-/16-Hi High Bandwidth Memory (HBM)23
Vertical Cladding Layer-Based Doping-Less Tunneling Field Effect Transistor: A Novel Low-Power High-Performance Device23
Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension23
Study on 1-THz Sine Waveguide Traveling-Wave Tube23
The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System23
Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs23
Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD23
Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance23
Demonstration of a High-Power Ka-Band Extended Interaction Klystron23
Hf0.5Zr0.5O₂-Based Ferroelectric Field-Effect Transistors With HfO₂ Seed Layers for Radiation-Hard Nonvolatile Memory Applications23
An Ultracompact Switching-Voltage-Based Fully Reconfigurable RRAM PUF With Low Native Instability23
Theoretical Study of Charge Carrier Lifetime and Recombination on the Performance of Eco-Friendly Perovskite Solar Cell23
Acceleration of Semiconductor Device Simulation With Approximate Solutions Predicted by Trained Neural Networks23
Hot Carrier Effect in Self-Aligned In–Ga–Zn–O Thin-Film Transistors With Short Channel Length23
Characterization and Extraction of Power Loop Stray Inductance With SiC Half-Bridge Power Module22
Deep Learning-Based BSIM-CMG Parameter Extraction for 10-nm FinFET22
Logic Device Based on Skyrmion Annihilation22
BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polariza22
Silicene/MoS2 Heterojunction for High-Performance Photodetector22
High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration22
Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors22
Temporal Electron-Spin Splitter Based on a Semiconductor Microstructure Constructed on Surface of InAs/AlxIn1-x As Heterostructure by Patterning a Ferromagnetic Stripe and a Scho22
Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition22
ON-Resistance of Ga2O3 Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping22
Resistivity Size Effect in Epitaxial Rh(001) and Rh(111) Layers22
Characterization and Modeling of Native MOSFETs Down to 4.2 K22
Volatile and Nonvolatile Memory Operations Implemented in a Pt/HfO₂/Ti Memristor22
An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor22
Output-Power Enhancement of Vircator Based on Second Virtual Cathode Formed by Wall Charge on a Dielectric Reflector22
Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors22
Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode22
Optimization of NiO/β-Ga2O3 Heterojunction Diodes for High-Power Application22
Low Subthreshold Swing and High Performance of Ultrathin PEALD InGaZnO Thin-Film Transistors22
Matrix-Addressed Flexible Capacitive Pressure Sensor With Suppressed Crosstalk for Artificial Electronic Skin22
Electron-Optic System With a Converged Sheet Electron Beam for a 0.2-THz Traveling-Wave Tube22
Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length22
Effect of Program Error in Memristive Neural Network With Weight Quantization22
Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics21
1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination21
Analysis of Failure Mechanisms During the Long-Term Retention Operation in 3-D NAND Flash Memories21
Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling21
Experimental Results for AlGaN/GaN HEMTs Improving Breakdown Voltage and Output Current by Electric Field Modulation21
Effect of Aluminum Doping on Performance of HfO-Based Flexible Resistive Memory Devices21
A Physical Model for Bulk Gate Insulator Trap Generation During Bias-Temperature Stress in Differently Processed p-Channel FETs21
Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance21
MOSFET-Based Memristor for High-Frequency Signal Processing21
Impact of Nonuniform Thermionic Emission on the Transition Behavior Between Temperature-and Space-Charge-Limited Emission21
High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O321
High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric With Ultralow Subthreshold Swing21
Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory21
Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics21
Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack21
Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current21
Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit21
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs21
A New Analog PWM Pixel Circuit With Metal Oxide TFTs for Micro-LED Displays21
Fabrication of Binder-Free TiO2 Nanofiber Electrodes via Electrophoretic Deposition for Low-Power Electronic Applications21
A Novel Dual-Directional SCR Structure With High Holding Voltage for 12-V Applications in 0.13-μm BCD Process21
Modeling and Analysis of Normally-OFF p-GaN Gate AlGaN/GaN HEMT as an ON-Chip Capacitor21
Investigation of Imprint in FE-HfO₂ and Its Recovery21
Flexible Printed Circuit Board as Novel Electrodes for Acoustofluidic Devices20
Amplified Methanol Sensitivity in Reduced Graphene Oxide FET Using Appropriate Gate Electrostatic20
Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique20
High-Yield and Uniform NbO x -Based Threshold Switching Devices for Neuron Applications20
A New Design Paradigm for Auto-Nonvolatile Ternary SRAMs Using Ferroelectric CNTFETs: From Device to Array Architecture20
Cyclotron Resonance Maser With Zigzag Quasi-Optical Transmission Line: Concept and Modeling20
Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal–Ferroelectric–Metal Capacitors20
28 nm HKMG-Based Current Limited FeFET Crossbar-Array for Inference Application20
Channel Properties of Ga₂O₃-on-SiC MOSFETs20
Energy-Efficient All-Spin BNN Using Voltage-Controlled Spin-Orbit Torque Device for Digit Recognition20
Design and Performance of ScAlN/AlN Trapezoidal Cantilever-Based MEMS Piezoelectric Energy Harvesters20
Active Thermal Management of High-Power LED Through Chip on Thermoelectric Cooler20
RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC20
Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application20
Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications20
Experimental Characterization of Charge Trapping Dynamics in 100-nm AlN/GaN/AlGaN-on-Si HEMTs by Wideband Transient Measurements20
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