IEEE Transactions on Electron Devices

Papers
(The TQCC of IEEE Transactions on Electron Devices is 8. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-07-01 to 2026-07-01.)
ArticleCitations
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors399
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs137
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs116
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”95
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs88
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform74
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors71
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator71
Changes in the Editorial Board61
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing60
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing57
Table of Contents57
IEEE Transactions on Electron Devices Publication Information55
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop55
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO355
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch55
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices54
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors53
A Physics-Based Compact Model for Silicon Cold-Source Transistors53
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress53
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator50
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs50
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material49
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field49
Compensation Method for Displacement Caused by CTE Mismatch in Micro-LED Bonding Process49
Defect-Engineered Resistive Switching in van der Waal Metals48
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes47
TiO2 Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells47
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization47
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂46
IEEE Transactions on Electron Devices Publication Information46
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration46
Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET46
Study on Scalable Model of Multifinger Structure for GaN p-i-n Diode46
Analysis of Thermal Disturbance in Vertically Stacked Phase-Change Memory Using Multiphysics Simulation46
Contact/Via Failure Recovery Using Nanosecond Green Laser Annealing44
Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors44
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores44
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures44
Event-Driven CsPbBr3 Perovskite Visual Neurons for Motion Direction Recognition in Low-Light Scenes44
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell44
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence43
Research on Bonding Strength Enhancement Process of Micro LED Devices Filled With Epoxy Resin Adhesive43
Plasma Jet Printing: An Introduction43
Reliable Operation of FeFET Reservoir Computing With Robustness Against Interface Degradation43
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs43
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W42
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor42
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements42
High-Throughput Screening Ferroelectric–Dielectric Heterostructure for Robust Memristor and Artificial Synapse42
A Graphene/Ge Heterostructure-Based Short-Wavelength Infrared Photodetector With >1 AW --1 Responsivity Boosted by a CuI Antireflection Layer42
Recovery Operation in HfZrO x -Based FeFETs With Interfacial Layer Scavenging41
Contact Length Scaling in In 2 O 3 and InGaZnO FETs: Critical Roles of Quantum Confinement and Ind41
Ga 2 O 3 TCAD Mobility Parameter Calibration Using Simulation Augmented Machine Learning With Phys41
A Review on Cell Structure Optimization of IGBT Under Overload Condition40
Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation40
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective39
High Switching Speed and Stability ECM STO Resistive Memory on n+-Si Substrate Realized Using Cu Filament Mechanism39
Physical Compact Model for Source-Gated Transistors for DC Application39
Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification39
High-Stability and High-Charge-Density HfZrO 2 MFM Capacitors With In Situ CF 4 Plasma at TiN Elec38
One-Step Complementary-Magnetization-Switching Spin-Orbit Torque Memory Based on U-Shaped Bending Current for Compute-in-Memory Applications38
A SPICE-Compatible High-Efficiency Equivalent Mechanical Circuit Method for Electro-Thermal-Mechanical Coupling Simulation37
Accurate ML-Based Prediction of Next-Generation nand With Limited Data Using Generative AI and Transfer Learning37
Tailoring the Sensitivity-Range Tradeoff in Monolithic InGaN/GaN Temperature Sensing Devices via Indium Content Engineering37
LTPS TFT-Based Optical Sensor Detecting Degradation of OLED to Improve Image Sticking for AMOLED Displays37
Optimized Design of W -Band High-Power Folded-Waveguide Traveling-Wave Tube36
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs36
Performance Enhancement of Thin-Film Transistor Based on In2O3:F/In2O3 Homojunction36
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals36
Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing36
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors36
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron35
Thickness-Dependent Enhancement of Ferroelectric Properties in ${\text{HfZrO}_{x}}$ Devices by Bottom ${\text{TiO}_{2}}$ Interlayer35
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol35
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT35
Effect of X-Ray Irradiation on Colloidal Quantum Dot SWIR CMOS Image Sensor34
Alpha Particle Detection Using Highly Rectifying Ni/Ga 2 O 3 /4H-SiC Heteroepitaxial MOS Junction34
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C34
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition34
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules34
Highly Efficient Gyrotron Mode Converter With a Launcher Changing Angular Spectrum of the Operating Mode34
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs34
First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs Wi33
Sigmoid Probabilistic Bits Using SiO Threshold Switching Devices for Probabilistic Computing33
Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application33
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines33
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors33
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT33
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet33
Unraveling the Impact of Cation Composition on Atomic Layer Deposited Ultrathin In–Sn–O Field-Effect Transistors33
Fully Physical BTI Analysis Tool (BAT) for Modeling of NBTI Architecture, Materials, Process, and Dimension Dependence33
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time32
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress32
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs32
Ferroelectric Polarization Effect on Charge Trapping in HfO 2 FeFETs Examined via Random Telegraph Noise32
Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S232
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration32
Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain32
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs31
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs31
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency30
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness30
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings30
Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors30
Modeling and Analysis of Terminal Capacitances in High-Power Devices: Application to p-GaN Gate HEMTs30
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs30
Design of High-Sensitivity Piezoelectric Micromachined Ultrasonic Transducer Based on Single-Crystal Lithium Niobate Thin Films30
Peak Response Wavelength Tunable 4H-SiC UV Detector Covering Near-Ultraviolet Region With High-Temperature Stability and Radiation Hardness30
Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H2S Gas Sensor for Oil and Gas Industry29
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing29
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain29
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp29
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation29
Spontaneously Oxidized CuxO/β-Ga2O3 p-n Junction for Self-Powered Deep-Ultraviolet Photodetection29
Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer29
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O329
Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor29
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization29
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study29
BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced Modeling29
Monolithic 3-D Integration of 2T0C DRAM and 1T1R RRAM for Accelerating Dynamic/Static Matrix Computation in Transformer Network29
Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory29
Compact E-Band Sheet Beam Folded Waveguide Traveling Wave Tube for High Data Rate Communication28
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate28
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode28
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory28
Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals28
Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects28
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension28
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates28
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing28
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation28
Metamaterial-Inspired 0.22 THz Traveling-Wave Tubes With Double Sheet Beams28
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen27
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness27
Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory27
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study27
Compact Modeling of Impact Ionization in High-Voltage Devices27
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor27
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy27
Investigation on Electrical–Thermal-Stress Failure of GaN HEMTs Under High-Power Microwave-Induced Pulse Injection27
Stack Optimization of TiO x -Based Resistive Switching Devices Through Interface Engineering27
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device27
Compact Model for Accurate Decoupling of Interface and Buffer Traps in HEMTs26
IEEE ELECTRON DEVICES SOCIETY26
IEEE ELECTRON DEVICES SOCIETY26
IEEE Transactions on Electron Devices Information for Authors26
A Capacitance Extraction Method Using Local Discontinuous Galerkin Method on Adaptive Triangular Meshes26
Investigation of a Low-Loss Transmission Structure for W-Band TWT26
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment26
IEEE Transactions on Electron Devices Information for Authors26
IEEE Transactions on Electron Devices information for authors26
TechRxiv: Share Your Preprint Research with the World!26
Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs26
High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates26
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors26
IEEE ELECTRON DEVICES SOCIETY26
IEEE Transactions on Electron Devices Information for Authors26
A Difference-Microvariation Solution and Analytical Model for Generic HEMTs26
Blank Page26
Plateau Voltage and Dynamic Capacitance Effect on SiC MOSFETs’ Gate Ringing26
Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture25
Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency25
Tandem Evaluation of AlN/β - and ε-Ga2O3 Tri-Gate MOSHEMTs25
Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations25
Enhancing Optical Performance for White Light-Emitting Diodes Using Quantum- Dots/Boron Nitride Hybrid Reflective Structure25
IEEE Transactions on Electron Devices Information for Authors25
Source-Drain Series Resistance Model for N-Stack Nanosheet FETs Using Transmission Line Matrix Method25
Frequency Adaptive Single-Transistor Neuron Based on Temporal Charge Trapping25
Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage25
Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept25
Enhanced Resistive Switching Performances of Mn-Doped BiFeO₃ Memristor by Introducing Oxygen Reservoir Interface25
A Novel Electron Gun Design Approach With an Externally Assembled Anode25
The Rectification Ability in the Si-Based Geometric Diode Based on Au/p-Si Nanocone/Au Heterostructure25
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors25
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]25
Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop25
Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether24
A Proton Irradiation Damage Compact Model of HfO x /TiO 24
A Photoelectric Synergistically Excited Cold-Cathode High-Frequency Radiation Source: From GHz to THz24
Broadband Photodetector Based on SnS 2 /MoS 2 /CuO/WSe 2 24
Control of Resistive Switching Endurance in TiO2/TiO2–x Memristors via Thermally Assisted Oxygen Plasma With Power Modulation24
Thermionic Electron Emission Capacity of the Ba₃ScGa₂O₇.₅ Impregnated Cathode24
Improvement of Electron Gun Breakdown Performance Through Surface Flashover and Discharge Studies24
Impact of Ultrathin TiO 2 Interlayer on the Structure and Properties of All Atomic Layer Deposited TiN/Hf 0.5 24
High-Sensitivity Single-Walled Carbon Nanotube/Graphene/Al₂O₃/Ge Near-Infrared Photodetector24
Multiscale Modeling of Self-Heating-Induced and Deformation-Accelerated Dielectric Traps Impacting Critical Path of Dielectric Breakdown in 5-nm Stacked Nanosheet FET24
Neuromorphic System Using Crosspoint-Type TaO x /Ta Memristors and Direct Device Training for Associative Memory24
Reliability of Advanced Nodes24
Resistive Switching Characteristics of HfO x -Based Memristor by Inserting GeTe Layer24
Impact of Back-Gate Bias on the Total Ionizing Dose and Hot Carrier Injection Effects in Double SOI nMOSFETs24
Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High fT of 2.09 GHz24
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs24
Temperature-Dependent High Magnetoresistance in Zigzag Silicene Nanoribbon Heterostructure24
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications24
Computational Investigation of c-GaN/GaAs1–x N x /GaAs Heterojunction Solar Cell24
High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors23
Device-Level Thermal Analysis for Gallium Oxide Lateral Field-Effect Transistor23
Simulation of Parasitic Backward-Wave Excitation in High-Power Gyrotron Cavities23
Improved Scalability of Negative Capacitance Junctionless Transistors With Underlap Design23
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications23
Hot-Electron Hardening in GaN-Based Power Devices by Selective p-GaN Gate Epitaxy23
Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations23
Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA23
Electrothermal Design of Silicon-Doped Microheaters for Optical Phase Change Memory23
Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging23
A Cross-Band High-Power Microwave Generator With Wide Frequency Tunability Based on a Relativistic Magnetron and a Radial Transit-Time Oscillator23
Impacts of SiO2-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers23
Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients23
Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al2O3/ β-Ga2O3 MOSCAPs23
Comprehensive Study of Improved Negative-Bias-Illumination-Temperature Stress Stability in Terbium-Doped Indium-Zinc-Oxide Thin-Film Transistors23
Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability23
A Wideband High-Power Microwave Mode Converter Using Vane-Loaded Waveguide23
HfO2–ZrO2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance23
Carrier Mobility in a 55-nm CMOS at 4 K: Characterization, Modeling, and Circuit Implications23
An Analytical Model of RRAM Relaxation Effect and Its Application for Neural Network Weight Refresh Strategy in Large-Scale RRAM Array23
Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and Beyond23
Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit23
Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor23
Eliminating the Double-Slope Behavior of Organic Field-Effect Transistors by Functionalizing the Dielectric Surface With a High Electron Affinity Self-Assembly Monolayer23
On-Chip Learning of Neural Network Using Spin-Based Activation Function Nodes23
Investigating the Properties of a New Vertical 4H-SiC Photoconductive Semiconductor Switch With a Double-Side Epitaxial Structure23
Real-Time Ultraviolet Flame Detection System Based on 4H-SiC Phototransistor22
Study on Schottky Al x Ga1-x N/GaN IMPATT Diodes for Millimeter-Wave Application22
Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum22
CNT/IGZO CFET Circuits Based on Top-Gate IGZO-FETs With Enhanced Hydrogen Resistance and Thermal Stability Using Y 2 O 322
Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN22
A Physical Charge-Based Model for Transient Response of Metal Oxide Thin-Film Transistors Considering Relaxation of Trap States22
Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences22
Switching Dynamics of HfO2–ZrO2 Nanolaminates With Different Laminate Thicknesses22
Evaluation of a Large Area, 83 μm Pixel Pitch Amorphous Selenium Indirect Flat Panel Detector22
The ESD Behavior of D-Mode GaN MIS-HEMT22
A Data-Driven Remaining Useful Life Prediction Method for Power MOSFETs Considering Nonlinear Dynamical Behaviors22
IEEE Transactions on Electron Devices Information for Authors22
Cu–Cu Bonded Microbump Interconnects With a 10-μm Pitch for 3-D-Stacked Chiplets22
Analysis of SiC NPN Ultraviolet Phototransistor Under Ultrahigh Temperature22
Design and Power Capacity Investigation of a Q-Band 100-kW-Continuous-Wave Gyro-TWT22
Online Junction Temperature Detection for IGBTs Using Voltage Rise Time22
Dielectrics for 2-D Electronics: From Device to Circuit Applications22
Tunable Synaptic Plasticity in Europium 2-D Perovskite ReRAM With Sub-0.5 V Switchings22
Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure22
A Novel Self-Activated Gate-Clamping SiC MOSFET Enhancing Short Circuit Capability With Merit of Multicell Combination22
SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration22
Highly Sensitive Free-Standing Waveguide-Integrated Bolometer on Germanium-on-Insulator Platform for Mid-Infrared On-Chip Spectroscopy22
High-Performance 1200-V p-GaN Gate HEMT on Standard 650-V GaN-on-Si Epi-Wafer22
Novel Design of a Ternary-CMOS With Vertical-Channel Double-Gate Field-Effect Transistors21
Investigation on Degradation of 1200-V Planar and Trench SiC MOSFET Under Surge Current Stress of Body Diode21
Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress21
Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling21
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