IEEE Transactions on Electron Devices

Papers
(The TQCC of IEEE Transactions on Electron Devices is 8. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-08-01 to 2026-08-01.)
ArticleCitations
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors432
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs145
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs120
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”97
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs89
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform75
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator74
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors72
Changes in the Editorial Board62
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing61
Table of Contents60
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing59
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop58
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices57
IEEE Transactions on Electron Devices Publication Information57
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors56
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs54
A Physics-Based Compact Model for Silicon Cold-Source Transistors54
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress54
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material53
Compensation Method for Displacement Caused by CTE Mismatch in Micro-LED Bonding Process51
Defect-Engineered Resistive Switching in van der Waal Metals50
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization50
TiO2 Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells50
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes49
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration48
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures48
Study on Scalable Model of Multifinger Structure for GaN p-i-n Diode48
Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors48
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂48
IEEE Transactions on Electron Devices Publication Information48
Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET48
Event-Driven CsPbBr3 Perovskite Visual Neurons for Motion Direction Recognition in Low-Light Scenes47
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores47
Reliable Operation of FeFET Reservoir Computing With Robustness Against Interface Degradation46
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence46
Contact/Via Failure Recovery Using Nanosecond Green Laser Annealing46
Research on Bonding Strength Enhancement Process of Micro LED Devices Filled With Epoxy Resin Adhesive46
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs45
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor45
Plasma Jet Printing: An Introduction45
A Graphene/Ge Heterostructure-Based Short-Wavelength Infrared Photodetector With >1 AW --1 Responsivity Boosted by a CuI Antireflection Layer45
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W44
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements44
Ga 2 O 3 TCAD Mobility Parameter Calibration Using Simulation Augmented Machine Learning With Phys44
Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation43
A Review on Cell Structure Optimization of IGBT Under Overload Condition43
Physical Compact Model for Source-Gated Transistors for DC Application43
Recovery Operation in HfZrO x -Based FeFETs With Interfacial Layer Scavenging43
High-Stability and High-Charge-Density HfZrO 2 MFM Capacitors With In Situ CF 4 Plasma at TiN Elec42
Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification42
One-Step Complementary-Magnetization-Switching Spin-Orbit Torque Memory Based on U-Shaped Bending Current for Compute-in-Memory Applications42
LTPS TFT-Based Optical Sensor Detecting Degradation of OLED to Improve Image Sticking for AMOLED Displays41
A SPICE-Compatible High-Efficiency Equivalent Mechanical Circuit Method for Electro-Thermal-Mechanical Coupling Simulation41
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors40
Optimized Design of W -Band High-Power Folded-Waveguide Traveling-Wave Tube40
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs40
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals40
Tailoring the Sensitivity-Range Tradeoff in Monolithic InGaN/GaN Temperature Sensing Devices via Indium Content Engineering40
Performance Enhancement of Thin-Film Transistor Based on In2O3:F/In2O3 Homojunction39
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol39
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron38
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT37
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition37
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT37
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors37
Thickness-Dependent Enhancement of Ferroelectric Properties in ${\text{HfZrO}_{x}}$ Devices by Bottom ${\text{TiO}_{2}}$ Interlayer37
Highly Efficient Gyrotron Mode Converter With a Launcher Changing Angular Spectrum of the Operating Mode37
Fully Physical BTI Analysis Tool (BAT) for Modeling of NBTI Architecture, Materials, Process, and Dimension Dependence37
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules37
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs37
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C37
Sigmoid Probabilistic Bits Using SiO Threshold Switching Devices for Probabilistic Computing37
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O336
Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application36
Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S236
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet36
Peak Response Wavelength Tunable 4H-SiC UV Detector Covering Near-Ultraviolet Region With High-Temperature Stability and Radiation Hardness35
Modeling and Analysis of Terminal Capacitances in High-Power Devices: Application to p-GaN Gate HEMTs35
Monolithic 3-D Integration of 2T0C DRAM and 1T1R RRAM for Accelerating Dynamic/Static Matrix Computation in Transformer Network35
BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced Modeling35
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain35
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization34
Ferroelectric Polarization Effect on Charge Trapping in HfO 2 FeFETs Examined via Random Telegraph Noise34
Design of High-Sensitivity Piezoelectric Micromachined Ultrasonic Transducer Based on Single-Crystal Lithium Niobate Thin Films34
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness34
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp34
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory33
Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory33
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs33
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation33
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates33
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress32
Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals32
Metamaterial-Inspired 0.22 THz Traveling-Wave Tubes With Double Sheet Beams31
Compact E-Band Sheet Beam Folded Waveguide Traveling Wave Tube for High Data Rate Communication31
Stack Optimization of TiO x -Based Resistive Switching Devices Through Interface Engineering31
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time31
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field31
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor31
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration31
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors31
Compact Modeling of Impact Ionization in High-Voltage Devices31
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment30
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs30
Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain30
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective30
Compact Model for Accurate Decoupling of Interface and Buffer Traps in HEMTs30
Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H2S Gas Sensor for Oil and Gas Industry30
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO330
Analysis of Thermal Disturbance in Vertically Stacked Phase-Change Memory Using Multiphysics Simulation29
Spontaneously Oxidized CuxO/β-Ga2O3 p-n Junction for Self-Powered Deep-Ultraviolet Photodetection29
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate29
High Switching Speed and Stability ECM STO Resistive Memory on n+-Si Substrate Realized Using Cu Filament Mechanism29
Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer29
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing29
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch29
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode29
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy29
High-Throughput Screening Ferroelectric–Dielectric Heterostructure for Robust Memristor and Artificial Synapse28
Investigation on Electrical–Thermal-Stress Failure of GaN HEMTs Under High-Power Microwave-Induced Pulse Injection28
Alpha Particle Detection Using Highly Rectifying Ni/Ga 2 O 3 /4H-SiC Heteroepitaxial MOS Junction28
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency28
Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects28
Effect of X-Ray Irradiation on Colloidal Quantum Dot SWIR CMOS Image Sensor28
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension28
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study28
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study28
First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs Wi28
Crystal-Face-Dependent Electron Mobility Due to Distinct Interface Trap Distributions in SiC n-Channel MOSFETs28
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines27
2.7-kV Ga 2 O 3 Vertical Schottky Barrier Diode With Photo-Dielectric Field-Plate27
Contact Length Scaling in In 2 O 3 and InGaZnO FETs: Critical Roles of Quantum Confinement and Ind27
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation27
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness27
Unraveling the Impact of Cation Composition on Atomic Layer Deposited Ultrathin In–Sn–O Field-Effect Transistors27
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell27
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs27
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings27
Accurate ML-Based Prediction of Next-Generation nand With Limited Data Using Generative AI and Transfer Learning27
Enhancing the Optoelectronic Performance of InGaN-Based RGB Micro-LEDs via a DBR/Ag Composite Structure for Display Applications27
Modulation of Carbon-Doped Buffer on the DC and Small-Signal Characteristics of AlGaN/GaN HEMTs on Si27
Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing27
Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors26
IEEE Transactions on Electron Devices Information for Authors26
Investigation of a Low-Loss Transmission Structure for W-Band TWT26
Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs26
The Rectification Ability in the Si-Based Geometric Diode Based on Au/p-Si Nanocone/Au Heterostructure26
A Novel Electron Gun Design Approach With an Externally Assembled Anode26
IEEE ELECTRON DEVICES SOCIETY26
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing26
IEEE ELECTRON DEVICES SOCIETY26
IEEE ELECTRON DEVICES SOCIETY26
Blank Page26
Frequency Adaptive Single-Transistor Neuron Based on Temporal Charge Trapping26
A Difference-Microvariation Solution and Analytical Model for Generic HEMTs26
Multilevel Analog Switching in HfO 2 /TiO x Flexible Memristor for Precision Neuromorphic Computin26
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device26
IEEE Transactions on Electron Devices Information for Authors26
IEEE Transactions on Electron Devices Information for Authors26
Source-Drain Series Resistance Model for N-Stack Nanosheet FETs Using Transmission Line Matrix Method26
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors26
Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High fT of 2.09 GHz25
Impact of Back-Gate Bias on the Total Ionizing Dose and Hot Carrier Injection Effects in Double SOI nMOSFETs25
Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether25
Broadband Photodetector Based on SnS 2 /MoS 2 /CuO/WSe 2 25
Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations25
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications25
IEEE Transactions on Electron Devices Information for Authors25
Investigating the Properties of a New Vertical 4H-SiC Photoconductive Semiconductor Switch With a Double-Side Epitaxial Structure25
Impact of Ultrathin TiO 2 Interlayer on the Structure and Properties of All Atomic Layer Deposited TiN/Hf 0.5 25
Improvement of Electron Gun Breakdown Performance Through Surface Flashover and Discharge Studies25
Reliability of Advanced Nodes25
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs25
Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept25
Enhanced Resistive Switching Performances of Mn-Doped BiFeO₃ Memristor by Introducing Oxygen Reservoir Interface25
High-Sensitivity Single-Walled Carbon Nanotube/Graphene/Al₂O₃/Ge Near-Infrared Photodetector25
A Proton Irradiation Damage Compact Model of HfO x /TiO 25
Carrier Mobility in a 55-nm CMOS at 4 K: Characterization, Modeling, and Circuit Implications25
Resistive Switching Characteristics of HfO x -Based Memristor by Inserting GeTe Layer25
Control of Resistive Switching Endurance in TiO2/TiO2–x Memristors via Thermally Assisted Oxygen Plasma With Power Modulation25
Multiscale Modeling of Self-Heating-Induced and Deformation-Accelerated Dielectric Traps Impacting Critical Path of Dielectric Breakdown in 5-nm Stacked Nanosheet FET25
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]25
A Photoelectric Synergistically Excited Cold-Cathode High-Frequency Radiation Source: From GHz to THz25
Thermionic Electron Emission Capacity of the Ba₃ScGa₂O₇.₅ Impregnated Cathode25
Electrothermal Design of Silicon-Doped Microheaters for Optical Phase Change Memory24
HfO2–ZrO2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance24
Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability24
Hot-Electron Hardening in GaN-Based Power Devices by Selective p-GaN Gate Epitaxy24
Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations24
Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging24
A Wideband High-Power Microwave Mode Converter Using Vane-Loaded Waveguide24
A Cross-Band High-Power Microwave Generator With Wide Frequency Tunability Based on a Relativistic Magnetron and a Radial Transit-Time Oscillator24
Impacts of SiO2-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers24
On-Chip Learning of Neural Network Using Spin-Based Activation Function Nodes24
High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors24
Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA24
Comprehensive Study of Improved Negative-Bias-Illumination-Temperature Stress Stability in Terbium-Doped Indium-Zinc-Oxide Thin-Film Transistors24
An Analytical Model of RRAM Relaxation Effect and Its Application for Neural Network Weight Refresh Strategy in Large-Scale RRAM Array24
SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration23
Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure23
Dielectrics for 2-D Electronics: From Device to Circuit Applications23
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications23
Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit23
Self-Heating Mitigation of TreeFETs by Interbridges23
A Data-Driven Remaining Useful Life Prediction Method for Power MOSFETs Considering Nonlinear Dynamical Behaviors23
Cu–Cu Bonded Microbump Interconnects With a 10-μm Pitch for 3-D-Stacked Chiplets23
Analysis of SiC NPN Ultraviolet Phototransistor Under Ultrahigh Temperature23
High-Performance 1200-V p-GaN Gate HEMT on Standard 650-V GaN-on-Si Epi-Wafer23
Eliminating the Double-Slope Behavior of Organic Field-Effect Transistors by Functionalizing the Dielectric Surface With a High Electron Affinity Self-Assembly Monolayer23
Evaluation of a Large Area, 83 μm Pixel Pitch Amorphous Selenium Indirect Flat Panel Detector23
Tunable Synaptic Plasticity in Europium 2-D Perovskite ReRAM With Sub-0.5 V Switchings23
Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and Beyond23
Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum23
IEEE Transactions on Electron Devices Information for Authors23
A Physical Charge-Based Model for Transient Response of Metal Oxide Thin-Film Transistors Considering Relaxation of Trap States23
Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes23
A Novel Self-Activated Gate-Clamping SiC MOSFET Enhancing Short Circuit Capability With Merit of Multicell Combination23
The ESD Behavior of D-Mode GaN MIS-HEMT23
Study on Schottky Al x Ga1-x N/GaN IMPATT Diodes for Millimeter-Wave Application23
Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients23
Improved Scalability of Negative Capacitance Junctionless Transistors With Underlap Design23
CNT/IGZO CFET Circuits Based on Top-Gate IGZO-FETs With Enhanced Hydrogen Resistance and Thermal Stability Using Y 2 O 323
A RepetitiveKu-Band Coaxial Relativistic Klystron Amplifier Packaged With Permanent Magnets23
Online Junction Temperature Detection for IGBTs Using Voltage Rise Time23
Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN23
Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop22
Design and Power Capacity Investigation of a Q-Band 100-kW-Continuous-Wave Gyro-TWT22
Breakdown Mechanisms of Vertical GaN Junction Field-Effect Transistors and Enhanced Figure of Merit Using Gradient Doping Channel22
Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases22
Thermal Dynamic of Single-Event Burnout in SiC Power MOSFETs22
Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate22
Optimization of a Cusp Gun With a Grid for a Terahertz Gyrotron Traveling-Wave Amplifier22
Unique Window ESD Failure in LDMOS--SCR and Its Implication on Power-to-Fail Scalability22
Heterogeneous Integration of 1700 PPI Green GaN Micro-LEDs Based on Cu–Ni–Sn Bumps22
High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates22
A 4.19-M Pixels Colloidal Quantum Dot-Based SWIR Image Sensor With High-Linearity Multistep Single-Slope ADCs22
Highly Sensitive Free-Standing Waveguide-Integrated Bolometer on Germanium-on-Insulator Platform for Mid-Infrared On-Chip Spectroscopy22
Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress22
Turn-On Mechanism of Split-Dummy-Active CSTBT22
A Finite Element Analysis for Vacuum Amplifier Electron Gun of Fine Pencil Beam22
Enhanced Performance of FeFETs With TiN/SiO 2 /Hf 0.5 Zr 0.5 22
Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al2O3/ β-Ga2O3 MOSCAPs22
Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress22
Simulation of Parasitic Backward-Wave Excitation in High-Power Gyrotron Cavities22
Effect of Substrate Bias in Ohmic p-Gate GaN-HEMTs on Unclamped Inductive Switching Capability22
Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor22
Novel Low-Loss 0.65-THz Multisectional Folded Waveguide High-Frequency Circuit22
Comparative Study of Avalanche and Short-Circuit Reliability in 1.2-kV SiC MOSFETs22
Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences21
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