IEEE Transactions on Electron Devices

Article	Citations
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness	92
Utilizing Valley–Spin Hall Effect in Monolayer WSe2 for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops	85
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs	84
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet	84
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study	80
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors	77
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs	75
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence	72
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform	72
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors	68
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress	58
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator	57
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules	56
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors	55
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron	54
Changes in the Editorial Board	52
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors	51
2021 EDS Education Award call for nominations	49
IEEE Transactions on Electron Devices publication information	49
Performance Analysis of the Direct-Charge β-Radiation Energy-Harvesting Method	48
Differential Signal Acquisition Using TFT Light-Sensing Pixel Array	48
IEEE Transactions on Electron Devices information for authors	48
Analytical Study on a 700 V Triple RESURF LDMOS With a Variable High-K Dielectric Trench	47
Design of Novel InP/InGaAs Photodetectors With NiO Transparent p-Region and Electrode	45
New Failure Mechanism Induced by Current Limit for Superjunction MOSFET Under Single-Pulse UIS Stress	45

Compensating Nonuniform OLED Pixel Brightness in a Vertical Blanking Interval by Learning TFT Characteristics	45
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment	45
Accurate and Efficient Algorithm for Computing Structure Functions From the Spatial Distribution of Thermal Properties in Electronic Devices	45
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition	44
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs	43
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch	43
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors	43
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field	43
Mitigation of Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors Through Use of Correction Frame	43
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT	42
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration	42
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory	42
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3	42
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency	41
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol	41
Complementary Vacuum Field Emission Transistor	40
Cyclotron Resonance Maser With Zigzag Quasi-Optical Transmission Line: Concept and Modeling	40
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C	40
A 0.35-THz Extended Interaction Oscillator Based on Overmoded and Bi-Periodic Structure	40
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs	40
Effect of X-Ray Irradiation on Colloidal Quantum Dot SWIR CMOS Image Sensor	39
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs	39
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs	39
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress	39
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate	38
A Physics-Based Compact Model for Silicon Cold-Source Transistors	38
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor	38
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect	38
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs	37
Linear Error Correction Codec Implementation Based on an In-Memory Computing Architecture for Nonvolatile Memories	37
Defect-Engineered Resistive Switching in van der Waal Metals	37
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements	37
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT	36
Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor	36
Highly Efficient Gyrotron Mode Converter With a Launcher Changing Angular Spectrum of the Operating Mode	36
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation	36
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs	35
Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory	35
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs	35
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”	35
L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection	35
Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects	35
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study	35
Peak Response Wavelength Tunable 4H-SiC UV Detector Covering Near-Ultraviolet Region With High-Temperature Stability and Radiation Hardness	35
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator	35
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension	35
Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application	34
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing	34
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores	34
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material	34

Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor	34
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell	34
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates	33
Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET	33
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures	33
Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification	32
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes	32
Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors	32
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices	32
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode	32
Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs	32
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings	32
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals	32
Table of Contents	31
Physical Compact Model for Source-Gated Transistors for DC Application	31
Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing	31
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines	31
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing	31
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp	31
Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S2	30
Reliable and Efficient Phosphor-in-Glass-Based Chip-Scale Packaging for High-Power White LEDs	30
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization	30
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation	30
Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory	30
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen	30
TiO2 Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells	30
Spontaneously Oxidized CuxO/β-Ga2O3 p-n Junction for Self-Powered Deep-Ultraviolet Photodetection	30
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration	30
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs	30
Performance Enhancement of Thin-Film Transistor Based on In2O3:F/In2O3 Homojunction	30
Sigmoid Probabilistic Bits Using SiOₓ Threshold Switching Devices for Probabilistic Computing	29
Alpha Particle Detection Using Highly Rectifying Ni/Ga2O3/4H-SiC Heteroepitaxial MOS Junction	29
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time	29
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy	29
Preferable Parametric Model for the Lifetime of the Organic Light-Emitting Diode Under Accelerated Current Stress Tests	29
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors	29
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization	29
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂	29
Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals	29
Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain	28
Grating Perovskite Enhanced Polarization-Sensitive GaAs-Based Photodetector	28
Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si	28
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs	28
Implementing a Ternary Inverter Using Dual-Pocket Tunnel Field-Effect Transistors	28
Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation	28
Reconfigurable MoTe2 Field-Effect Transistors and its Application in Compact CMOS Circuits	28
Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”	28
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness	28
Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format	28
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain	28
Compact Modeling of Impact Ionization in High-Voltage Devices	28
Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature	28
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective	28
Plasma Jet Printing: An Introduction	27
Engineering of a Blocking Layer Structure for Low-Lag Operation of the a-PbO-Based X-Ray Detector	27
Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs	27
Stack Optimization of TiOx-Based Resistive Switching Devices Through Interface Engineering	27
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device	27
Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs	27
Metamaterial-Inspired 0.22 THz Traveling-Wave Tubes With Double Sheet Beams	27
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W	27
Design and Experiment of 1 THz Slow Wave Structure Fabricated by Nano-CNC Technology	27
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing	27
Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact	27
Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer	27
Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors	27
Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H2S Gas Sensor for Oil and Gas Industry	27
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO3	27
IEEE Transactions on Electron Devices Information for Authors	26
IEEE ELECTRON DEVICES SOCIETY	26
Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum	26
TechRxiv: Share Your Preprint Research with the World!	26
Compact E-Band Sheet Beam Folded Waveguide Traveling Wave Tube for High Data Rate Communication	26
IEEE ELECTRON DEVICES SOCIETY	26
Study on Schottky Al x Ga1-x N/GaN IMPATT Diodes for Millimeter-Wave Application	26
Multiscale Modeling of Self-Heating-Induced and Deformation-Accelerated Dielectric Traps Impacting Critical Path of Dielectric Breakdown in 5-nm Stacked Nanosheet FET	26
Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases	25
Hybrid Integration of Gate-All-Around Stacked Si Nanosheet FET and Si/SiGe Super-Lattice FinFET to Optimize 6T-SRAM for N3 Node and Beyond	25
Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations	25
High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors	25

High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O3	25
IEEE Transactions on Electron Devices information for authors	25
Impact of Back-Gate Bias on the Total Ionizing Dose and Hot Carrier Injection Effects in Double SOI nMOSFETs	25
Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations	25
Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress	25
Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit	25
Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs	25
Improvement of Electron Gun Breakdown Performance Through Surface Flashover and Discharge Studies	25
Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture	25
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs	24
Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High fT of 2.09 GHz	24
An Efficient Inverted Relativistic Magnetron With Virtual Cathode	24
An Easy-to-Fabricate Circular TE₂₁/TE₀₁ Mode Generator	24
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]	24
A Difference-Microvariation Solution and Analytical Model for Generic HEMTs	24
Optimization of a Cusp Gun With a Grid for a Terahertz Gyrotron Traveling-Wave Amplifier	24
Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN	24
Substrate Bias Enhanced Trap Effects on Time-Dependent Dielectric Breakdown of GaN MIS-HEMTs	24
Thermistor-Based Nematic Liquid Crystal IM95100-000	24
Improved Scalability of Negative Capacitance Junctionless Transistors With Underlap Design	24
Enhancing Optical Performance for White Light-Emitting Diodes Using Quantum- Dots/Boron Nitride Hybrid Reflective Structure	24
Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept	24
Low Switching Loss and EMI Noise IGBT With Self-Adaptive Hole-Extracting Path	24
Improved Compact Modeling of SiGe HBT Linearity With MEXTRAM	24
On-Chip Learning of Neural Network Using Spin-Based Activation Function Nodes	24
Neuromorphic System Using Crosspoint-Type TaO x /Ta Memristors and Direct Device Training for Associative Memory	24
A Physical Charge-Based Model for Transient Response of Metal Oxide Thin-Film Transistors Considering Relaxation of Trap States	23
Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al2O3/ β-Ga2O3 MOSCAPs	23
HfO2–ZrO2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance	23
Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress	23
Low-Power Ultradeep-Submicrometer Junctionless Carbon Nanotube Field-Effect Diode	23
SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration	23
A Novel Electron Gun Design Approach With an Externally Assembled Anode	23
Investigation of a Low-Loss Transmission Structure for W-Band TWT	23
Review of Quanta Image Sensors for Ultralow-Light Imaging	23
Investigation on Degradation of 1200-V Planar and Trench SiC MOSFET Under Surge Current Stress of Body Diode	23
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter	23
A RepetitiveKu-Band Coaxial Relativistic Klystron Amplifier Packaged With Permanent Magnets	23
Resistive Switching Characteristics of HfO x -Based Memristor by Inserting GeTe Layer	23
Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution	23
Design and Development of Polarization-Enhanced E-Mode GaN p-FET and Complementary Logic (CL) Circuits	23
Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether	23
Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes	23
A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN	23
A Neuromorphic Brain Interface Based on RRAM Crossbar Arrays for High Throughput Real-Time Spike Sorting	23
Thin Film Magnetic Core Microinductor With Stacked Windings	23
Revisiting the Time-Domain and Frequency-Domain Definitions of Capacitance	22
IEEE ELECTRON DEVICES SOCIETY	22
Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application	22
An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode	22
Impact of Nonuniform Ozone Anneal Treatment on the Resistance Levels in an IGZO-ReRAM Fabricated on ITO-Coated Glass Substrate	22
Investigation of a Multibeam Magnetron Injection Gun for a W-Band Sectorial-Tunnel Gyro-TWT	22
Enhanced Resistive Switching Performances of Mn-Doped BiFeO₃ Memristor by Introducing Oxygen Reservoir Interface	22
Blank Page	22
IEEE Transactions on Electron Devices Information for Authors	22
Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop	22
A Data-Driven Remaining Useful Life Prediction Method for Power MOSFETs Considering Nonlinear Dynamical Behaviors	22
Dielectrics for 2-D Electronics: From Device to Circuit Applications	22
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs	22
High-Yield and Uniform NbO x -Based Threshold Switching Devices for Neuron Applications	22
IEEE Transactions on Electron Devices Information for Authors	22
Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA	22
Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences	22
Impacts of SiO2-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers	22
Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients	22
Characterization and Analysis of 4H-SiC Super Junction JFETs Fabricated by Sidewall Implantation	22
Evaluation of a Large Area, 83 μm Pixel Pitch Amorphous Selenium Indirect Flat Panel Detector	22
Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate	21
Novel Low-Loss 0.65-THz Multisectional Folded Waveguide High-Frequency Circuit	21
Solution-Driven HfLaOx-Based Gate Dielectrics for Thin Film Transistors and Unipolar Inverters	21
Novel Enhance-Mode AlGaN/GaN JFET With BV of Over 1.2 kV Maintaining Low R ON,sp	21
Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging	21
Role of Channel Inversion in Ambient Degradation of Phosphorene FETs	21
Plateau Voltage and Dynamic Capacitance Effect on SiC MOSFETs’ Gate Ringing	21
Cu–Cu Bonded Microbump Interconnects With a 10-μm Pitch for 3-D-Stacked Chiplets	21
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors	21
The ESD Behavior of D-Mode GaN MIS-HEMT	21
Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage	21
Device-Level Thermal Analysis for Gallium Oxide Lateral Field-Effect Transistor	21
Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers	21
Thermionic Electron Emission Capacity of the Ba₃ScGa₂O₇.₅ Impregnated Cathode	21
Simulation of Parasitic Backward-Wave Excitation in High-Power Gyrotron Cavities	21
High-Sensitivity Single-Walled Carbon Nanotube/Graphene/Al₂O₃/Ge Near-Infrared Photodetector	21
A Cross-Band High-Power Microwave Generator With Wide Frequency Tunability Based on a Relativistic Magnetron and a Radial Transit-Time Oscillator	21
Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability	21
Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency	21
Multiport Relativistic Magnetron for Phased Array Application	21
Design and Cold Test of a G-Band 10-kW-Level Pulse TE01-Mode Gyrotron Traveling-Wave Tube	21
Computational Investigation of c-GaN/GaAs1–x N x /GaAs Heterojunction Solar Cell	21
Source-Drain Series Resistance Model for N-Stack Nanosheet FETs Using Transmission Line Matrix Method	21
Revisiting Lateral-BTBT Gate-Induced Drain Leakage in Nanowire FETs for 1T-DRAM	20
Optimum Ge Profile Design for High-Response SiGe/Si Heterojunction Phototransistor Applicable in Wide Spectral Range of 400–1000 nm	20
Optical Millinewton Force Sensors Based on GaN Devices Integrated With Bionic-Structured PMDS Films	20
Fine-Tunable Emission Pulse Generation Circuit Based on p-Type Low-Temperature Poly-Si Thin-Film Transistors for Active Matrix Organic Light-Emitting Diode Displays	20
Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2Pr > 70 μC/cm2) in Hf0.5Zr0.5O	20