IEEE Transactions on Electron Devices

Papers
(The TQCC of IEEE Transactions on Electron Devices is 8. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-06-01 to 2026-06-01.)
ArticleCitations
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors370
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3124
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs115
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs110
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”104
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs93
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform92
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator84
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors71
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing69
Changes in the Editorial Board69
Table of Contents66
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing64
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch61
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop58
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs57
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain57
Stack Optimization of TiO x -Based Resistive Switching Devices Through Interface Engineering54
IEEE Transactions on Electron Devices Publication Information54
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO354
Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects53
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices53
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors53
Monolithic 3-D Integration of 2T0C DRAM and 1T1R RRAM for Accelerating Dynamic/Static Matrix Computation in Transformer Network52
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress51
A Physics-Based Compact Model for Silicon Cold-Source Transistors49
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs49
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study48
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator48
Compensation Method for Displacement Caused by CTE Mismatch in Micro-LED Bonding Process47
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material47
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field46
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization46
Defect-Engineered Resistive Switching in van der Waal Metals46
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂45
TiO2 Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells45
Modeling and Analysis of Terminal Capacitances in High-Power Devices: Application to p-GaN Gate HEMTs45
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes45
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs44
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration44
Analysis of Thermal Disturbance in Vertically Stacked Phase-Change Memory Using Multiphysics Simulation44
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors44
Study on Scalable Model of Multifinger Structure for GaN p-i-n Diode44
IEEE Transactions on Electron Devices Publication Information43
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency42
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures42
Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET42
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell42
Event-Driven CsPbBr3 Perovskite Visual Neurons for Motion Direction Recognition in Low-Light Scenes41
Reliable Operation of FeFET Reservoir Computing With Robustness Against Interface Degradation41
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores41
Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors41
Contact/Via Failure Recovery Using Nanosecond Green Laser Annealing41
Compact Modeling of Impact Ionization in High-Voltage Devices40
Research on Bonding Strength Enhancement Process of Micro LED Devices Filled With Epoxy Resin Adhesive40
L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection40
Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H2S Gas Sensor for Oil and Gas Industry39
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization39
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing39
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence39
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs39
Linear Error Correction Codec Implementation Based on an In-Memory Computing Architecture for Nonvolatile Memories38
Plasma Jet Printing: An Introduction38
Peak Response Wavelength Tunable 4H-SiC UV Detector Covering Near-Ultraviolet Region With High-Temperature Stability and Radiation Hardness38
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings37
A Graphene/Ge Heterostructure-Based Short-Wavelength Infrared Photodetector With >1 AW --1 Responsivity Boosted by a CuI Antireflection Layer36
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W36
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor36
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements36
Ga 2 O 3 TCAD Mobility Parameter Calibration Using Simulation Augmented Machine Learning With Phys35
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate35
High-Throughput Screening Ferroelectric–Dielectric Heterostructure for Robust Memristor and Artificial Synapse35
Recovery Operation in HfZrO x -Based FeFETs With Interfacial Layer Scavenging35
Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer35
Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs34
Contact Length Scaling in In 2 O 3 and InGaZnO FETs: Critical Roles of Quantum Confinement and Ind34
Compact E-Band Sheet Beam Folded Waveguide Traveling Wave Tube for High Data Rate Communication34
Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation34
BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced Modeling34
A Review on Cell Structure Optimization of IGBT Under Overload Condition34
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness34
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor34
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol33
Investigation on Electrical–Thermal-Stress Failure of GaN HEMTs Under High-Power Microwave-Induced Pulse Injection33
Performance Enhancement of Thin-Film Transistor Based on In2O3:F/In2O3 Homojunction33
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective33
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron33
Physical Compact Model for Source-Gated Transistors for DC Application33
Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification33
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT33
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs32
Highly Efficient Gyrotron Mode Converter With a Launcher Changing Angular Spectrum of the Operating Mode32
Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals32
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition32
Effect of X-Ray Irradiation on Colloidal Quantum Dot SWIR CMOS Image Sensor32
Thickness-Dependent Enhancement of Ferroelectric Properties in ${\text{HfZrO}_{x}}$ Devices by Bottom ${\text{TiO}_{2}}$ Interlayer32
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C32
Alpha Particle Detection Using Highly Rectifying Ni/Ga 2 O 3 /4H-SiC Heteroepitaxial MOS Junction32
Unraveling the Impact of Cation Composition on Atomic Layer Deposited Ultrathin In–Sn–O Field-Effect Transistors31
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy31
Sigmoid Probabilistic Bits Using SiO Threshold Switching Devices for Probabilistic Computing31
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration31
Fully Physical BTI Analysis Tool (BAT) for Modeling of NBTI Architecture, Materials, Process, and Dimension Dependence31
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules31
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors30
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT30
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension30
Ferroelectric Polarization Effect on Charge Trapping in HfO 2 FeFETs Examined via Random Telegraph Noise30
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode30
Metamaterial-Inspired 0.22 THz Traveling-Wave Tubes With Double Sheet Beams30
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing29
Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application29
First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs Wi29
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs29
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet29
Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si29
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness29
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines29
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment29
Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain28
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time28
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen28
Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S228
One-Step Complementary-Magnetization-Switching Spin-Orbit Torque Memory Based on U-Shaped Bending Current for Compute-in-Memory Applications28
Accurate ML-Based Prediction of Next-Generation nand With Limited Data Using Generative AI and Transfer Learning28
High Switching Speed and Stability ECM STO Resistive Memory on n+-Si Substrate Realized Using Cu Filament Mechanism28
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device28
High-Stability and High-Charge-Density HfZrO 2 MFM Capacitors With In Situ CF 4 Plasma at TiN Elec28
A SPICE-Compatible High-Efficiency Equivalent Mechanical Circuit Method for Electro-Thermal-Mechanical Coupling Simulation28
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect27
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation27
Optimized Design of W -Band High-Power Folded-Waveguide Traveling-Wave Tube27
Design of High-Sensitivity Piezoelectric Micromachined Ultrasonic Transducer Based on Single-Crystal Lithium Niobate Thin Films27
LTPS TFT-Based Optical Sensor Detecting Degradation of OLED to Improve Image Sticking for AMOLED Displays27
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs27
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors27
Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory27
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress27
Tailoring the Sensitivity-Range Tradeoff in Monolithic InGaN/GaN Temperature Sensing Devices via Indium Content Engineering27
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study27
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals27
Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing27
TechRxiv: Share Your Preprint Research with the World!26
IEEE Transactions on Electron Devices Information for Authors26
IEEE Transactions on Electron Devices Information for Authors26
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs26
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates26
Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory26
IEEE ELECTRON DEVICES SOCIETY26
IEEE ELECTRON DEVICES SOCIETY26
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp26
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation26
Spontaneously Oxidized CuxO/β-Ga2O3 p-n Junction for Self-Powered Deep-Ultraviolet Photodetection26
IEEE ELECTRON DEVICES SOCIETY26
IEEE Transactions on Electron Devices information for authors26
Investigation of a Low-Loss Transmission Structure for W-Band TWT26
Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor26
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory26
Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors26
A Capacitance Extraction Method Using Local Discontinuous Galerkin Method on Adaptive Triangular Meshes25
IEEE Transactions on Electron Devices Information for Authors25
Thermal Dynamic of Single-Event Burnout in SiC Power MOSFETs25
Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage25
Tandem Evaluation of AlN/β - and ε-Ga2O3 Tri-Gate MOSHEMTs25
Source-Drain Series Resistance Model for N-Stack Nanosheet FETs Using Transmission Line Matrix Method25
Blank Page25
A Difference-Microvariation Solution and Analytical Model for Generic HEMTs25
Highly Sensitive Free-Standing Waveguide-Integrated Bolometer on Germanium-on-Insulator Platform for Mid-Infrared On-Chip Spectroscopy25
The Rectification Ability in the Si-Based Geometric Diode Based on Au/p-Si Nanocone/Au Heterostructure25
Frequency Adaptive Single-Transistor Neuron Based on Temporal Charge Trapping25
High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates25
Plateau Voltage and Dynamic Capacitance Effect on SiC MOSFETs’ Gate Ringing25
Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs25
Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency25
Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes25
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors25
Control of Resistive Switching Endurance in TiO2/TiO2–x Memristors via Thermally Assisted Oxygen Plasma With Power Modulation24
Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop24
Optimization of a Cusp Gun With a Grid for a Terahertz Gyrotron Traveling-Wave Amplifier24
Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture24
IEEE Transactions on Electron Devices Information for Authors24
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs24
Neuromorphic System Using Crosspoint-Type TaO x /Ta Memristors and Direct Device Training for Associative Memory24
Reliability of Advanced Nodes24
Effect of Substrate Bias in Ohmic p-Gate GaN-HEMTs on Unclamped Inductive Switching Capability24
A Novel Electron Gun Design Approach With an Externally Assembled Anode24
Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations24
Multiscale Modeling of Self-Heating-Induced and Deformation-Accelerated Dielectric Traps Impacting Critical Path of Dielectric Breakdown in 5-nm Stacked Nanosheet FET24
Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition24
Temperature-Dependent High Magnetoresistance in Zigzag Silicene Nanoribbon Heterostructure24
Enhanced Resistive Switching Performances of Mn-Doped BiFeO₃ Memristor by Introducing Oxygen Reservoir Interface24
Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept24
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]24
Enhancing Optical Performance for White Light-Emitting Diodes Using Quantum- Dots/Boron Nitride Hybrid Reflective Structure24
A Physical Charge-Based Model for Transient Response of Metal Oxide Thin-Film Transistors Considering Relaxation of Trap States24
Broadband Photodetector Based on SnS 2 /MoS 2 /CuO/WSe 2 24
Thermionic Electron Emission Capacity of the Ba₃ScGa₂O₇.₅ Impregnated Cathode23
Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether23
A Proton Irradiation Damage Compact Model of HfO x /TiO 23
Electrothermal Design of Silicon-Doped Microheaters for Optical Phase Change Memory23
Switching Dynamics of HfO2–ZrO2 Nanolaminates With Different Laminate Thicknesses23
Resistive Switching Characteristics of HfO x -Based Memristor by Inserting GeTe Layer23
Impact of Back-Gate Bias on the Total Ionizing Dose and Hot Carrier Injection Effects in Double SOI nMOSFETs23
A Photoelectric Synergistically Excited Cold-Cathode High-Frequency Radiation Source: From GHz to THz23
Cu–Cu Bonded Microbump Interconnects With a 10-μm Pitch for 3-D-Stacked Chiplets23
Investigating the Properties of a New Vertical 4H-SiC Photoconductive Semiconductor Switch With a Double-Side Epitaxial Structure23
Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging23
Design and Development of Polarization-Enhanced E-Mode GaN p-FET and Complementary Logic (CL) Circuits23
Improvement of Electron Gun Breakdown Performance Through Surface Flashover and Discharge Studies23
Role of Channel Inversion in Ambient Degradation of Phosphorene FETs23
High-Sensitivity Single-Walled Carbon Nanotube/Graphene/Al₂O₃/Ge Near-Infrared Photodetector23
Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate23
Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High fT of 2.09 GHz23
Carrier Mobility in a 55-nm CMOS at 4 K: Characterization, Modeling, and Circuit Implications23
Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress23
Impact of Ultrathin TiO 2 Interlayer on the Structure and Properties of All Atomic Layer Deposited TiN/Hf 0.5 23
Computational Investigation of c-GaN/GaAs1–x N x /GaAs Heterojunction Solar Cell23
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications23
A Wideband High-Power Microwave Mode Converter Using Vane-Loaded Waveguide22
Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor22
A Finite Element Analysis for Vacuum Amplifier Electron Gun of Fine Pencil Beam22
High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors22
On-Chip Learning of Neural Network Using Spin-Based Activation Function Nodes22
A Cross-Band High-Power Microwave Generator With Wide Frequency Tunability Based on a Relativistic Magnetron and a Radial Transit-Time Oscillator22
Hot-Electron Hardening in GaN-Based Power Devices by Selective p-GaN Gate Epitaxy22
Impacts of SiO2-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers22
Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability22
Online Junction Temperature Detection for IGBTs Using Voltage Rise Time22
CNT/IGZO CFET Circuits Based on Top-Gate IGZO-FETs With Enhanced Hydrogen Resistance and Thermal Stability Using Y 2 O 322
Device-Level Thermal Analysis for Gallium Oxide Lateral Field-Effect Transistor22
Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA22
Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations22
Comprehensive Study of Improved Negative-Bias-Illumination-Temperature Stress Stability in Terbium-Doped Indium-Zinc-Oxide Thin-Film Transistors22
Real-Time Ultraviolet Flame Detection System Based on 4H-SiC Phototransistor22
Analysis of SiC NPN Ultraviolet Phototransistor Under Ultrahigh Temperature22
Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases22
Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN22
HfO2–ZrO2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance22
Design and Power Capacity Investigation of a Q-Band 100-kW-Continuous-Wave Gyro-TWT22
A Data-Driven Remaining Useful Life Prediction Method for Power MOSFETs Considering Nonlinear Dynamical Behaviors22
Review of Quanta Image Sensors for Ultralow-Light Imaging22
Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al2O3/ β-Ga2O3 MOSCAPs22
Unique Window ESD Failure in LDMOS–SCR and Its Implication on Power-to-Fail Scalability22
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs21
Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure21
The ESD Behavior of D-Mode GaN MIS-HEMT21
Evaluation of a Large Area, 83 μm Pixel Pitch Amorphous Selenium Indirect Flat Panel Detector21
A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance21
Simulation of Parasitic Backward-Wave Excitation in High-Power Gyrotron Cavities21
Dielectrics for 2-D Electronics: From Device to Circuit Applications21
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