IEEE Transactions on Electron Devices

Article	Citations
IEEE Transactions on Electron Devices information for authors	312
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors	161
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O3	113
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs	108
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”	104
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs	104
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs	91
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates	87
Utilizing Valley–Spin Hall Effect in Monolayer WSe2 for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops	81
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform	78
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator	69
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors	65
Changes in the Editorial Board	65
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing	64
Table of Contents	61
A Physics-Based Compact Model for Silicon Cold-Source Transistors	60
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing	60
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs	59
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress	58
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study	56
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator	55
High Switching Speed and Stability ECM STO Resistive Memory on n+-Si Substrate Realized Using Cu Filament Mechanism	55
First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs Wi	54
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch	54
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop	52

Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain	51
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs	50
Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors	49
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines	48
IEEE Transactions on Electron Devices Publication Information	47
Stack Optimization of TiO x -Based Resistive Switching Devices Through Interface Engineering	47
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT	46
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices	46
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO3	46
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory	45
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation	45
Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects	44
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration	44
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs	44
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors	44
Monolithic 3-D Integration of 2T0C DRAM and 1T1R RRAM for Accelerating Dynamic/Static Matrix Computation in Transformer Network	43
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material	43
Design and Experiment of 1 THz Slow Wave Structure Fabricated by Nano-CNC Technology	43
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress	43
Optimized Design of W -Band High-Power Folded-Waveguide Traveling-Wave Tube	43
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time	42
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen	42
Defect-Engineered Resistive Switching in van der Waal Metals	42
Compensation Method for Displacement Caused by CTE Mismatch in Micro-LED Bonding Process	42
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field	42
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes	41
TiO2 Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells	41
Modeling and Analysis of Terminal Capacitances in High-Power Devices: Application to p-GaN Gate HEMTs	41
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization	41
Event-Driven CsPbBr3 Perovskite Visual Neurons for Motion Direction Recognition in Low-Light Scenes	40
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂	40
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores	40
Reliable Operation of FeFET Reservoir Computing With Robustness Against Interface Degradation	39
L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection	39
Research on Bonding Strength Enhancement Process of Micro LED Devices Filled With Epoxy Resin Adhesive	39
Compact Modeling of Impact Ionization in High-Voltage Devices	39
Contact/Via Failure Recovery Using Nanosecond Green Laser Annealing	39
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence	39
Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors	38
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs	38
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing	38
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization	38
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs	38
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings	37
Linear Error Correction Codec Implementation Based on an In-Memory Computing Architecture for Nonvolatile Memories	37
Peak Response Wavelength Tunable 4H-SiC UV Detector Covering Near-Ultraviolet Region With High-Temperature Stability and Radiation Hardness	37
Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H2S Gas Sensor for Oil and Gas Industry	37
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor	37
Plasma Jet Printing: An Introduction	37
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements	36

A Graphene/Ge Heterostructure-Based Short-Wavelength Infrared Photodetector With >1 AW --1 Responsivity Boosted by a CuI Antireflection Layer	36
Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor	36
Ga 2 O 3 TCAD Mobility Parameter Calibration Using Simulation Augmented Machine Learning With Phys	35
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate	35
High-Throughput Screening Ferroelectric–Dielectric Heterostructure for Robust Memristor and Artificial Synapse	35
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W	35
Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer	35
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals	34
Contact Length Scaling in In 2 O 3 and InGaZnO FETs: Critical Roles of Quantum Confinement and Ind	34
Sigmoid Probabilistic Bits Using SiOₓ Threshold Switching Devices for Probabilistic Computing	34
Recovery Operation in HfZrO x -Based FeFETs With Interfacial Layer Scavenging	34
A Review on Cell Structure Optimization of IGBT Under Overload Condition	34
Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs	33
Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation	33
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness	33
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect	33
Compact E-Band Sheet Beam Folded Waveguide Traveling Wave Tube for High Data Rate Communication	32
Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing	32
Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory	32
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study	32
BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced Modeling	32
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device	32
Accurate ML-Based Prediction of Next-Generation nand With Limited Data Using Generative AI and Transfer Learning	31
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective	31
Physical Compact Model for Source-Gated Transistors for DC Application	31
One-Step Complementary-Magnetization-Switching Spin-Orbit Torque Memory Based on U-Shaped Bending Current for Compute-in-Memory Applications	31
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension	31
Design of High-Sensitivity Piezoelectric Micromachined Ultrasonic Transducer Based on Single-Crystal Lithium Niobate Thin Films	31
A SPICE-Compatible High-Efficiency Equivalent Mechanical Circuit Method for Electro-Thermal-Mechanical Coupling Simulation	31
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor	31
Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory	31
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron	30
Performance Enhancement of Thin-Film Transistor Based on In2O3:F/In2O3 Homojunction	30
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT	30
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode	30
Investigation on Electrical–Thermal-Stress Failure of GaN HEMTs Under High-Power Microwave-Induced Pulse Injection	30
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol	30
Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification	30
Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals	29
Metamaterial-Inspired 0.22 THz Traveling-Wave Tubes With Double Sheet Beams	29
Alpha Particle Detection Using Highly Rectifying Ni/Ga 2 O 3 /4H-SiC Heteroepitaxial MOS Junction	29
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp	29
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition	29
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs	29
Thickness-Dependent Enhancement of Ferroelectric Properties in ${\text{HfZrO}_{x}}$ Devices by Bottom ${\text{TiO}_{2}}$ Interlayer	29
Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S2	29
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment	28
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C	28
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs	28
Spontaneously Oxidized CuxO/β-Ga2O3 p-n Junction for Self-Powered Deep-Ultraviolet Photodetection	28
Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain	28
Grating Perovskite Enhanced Polarization-Sensitive GaAs-Based Photodetector	28
Effect of X-Ray Irradiation on Colloidal Quantum Dot SWIR CMOS Image Sensor	28
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors	28
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors	28
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration	28
Highly Efficient Gyrotron Mode Converter With a Launcher Changing Angular Spectrum of the Operating Mode	28
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy	28
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing	28
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules	28
Unraveling the Impact of Cation Composition on Atomic Layer Deposited Ultrathin In–Sn–O Field-Effect Transistors	28
Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET	27
Fully Physical BTI Analysis Tool (BAT) for Modeling of NBTI Architecture, Materials, Process, and Dimension Dependence	27
Study on Scalable Model of Multifinger Structure for GaN p-i-n Diode	27
Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si	27
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency	27
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness	27
Analysis of Thermal Disturbance in Vertically Stacked Phase-Change Memory Using Multiphysics Simulation	27
Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application	27
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet	27
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs	27
IEEE Transactions on Electron Devices Publication Information	27
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors	26
IEEE ELECTRON DEVICES SOCIETY	26
Multiscale Modeling of Self-Heating-Induced and Deformation-Accelerated Dielectric Traps Impacting Critical Path of Dielectric Breakdown in 5-nm Stacked Nanosheet FET	26
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell	26
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation	26
TechRxiv: Share Your Preprint Research with the World!	26
IEEE Transactions on Electron Devices information for authors	26
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures	26

IEEE Transactions on Electron Devices Information for Authors	26
IEEE ELECTRON DEVICES SOCIETY	26
IEEE Transactions on Electron Devices Information for Authors	26
IEEE ELECTRON DEVICES SOCIETY	25
IEEE Transactions on Electron Devices Information for Authors	25
Investigation of a Low-Loss Transmission Structure for W-Band TWT	25
Plateau Voltage and Dynamic Capacitance Effect on SiC MOSFETs’ Gate Ringing	25
A Capacitance Extraction Method Using Local Discontinuous Galerkin Method on Adaptive Triangular Meshes	25
A Difference-Microvariation Solution and Analytical Model for Generic HEMTs	25
Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs	25
HfO2–ZrO2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance	25
Hot-Electron Hardening in GaN-Based Power Devices by Selective p-GaN Gate Epitaxy	25
Improvement of Electron Gun Breakdown Performance Through Surface Flashover and Discharge Studies	25
Highly Sensitive Free-Standing Waveguide-Integrated Bolometer on Germanium-on-Insulator Platform for Mid-Infrared On-Chip Spectroscopy	25
Blank Page	25
High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates	25
Thermal Dynamic of Single-Event Burnout in SiC Power MOSFETs	25
Tandem Evaluation of AlN/β - and ε-Ga2O3 Tri-Gate MOSHEMTs	24
The Rectification Ability in the Si-Based Geometric Diode Based on Au/p-Si Nanocone/Au Heterostructure	24
An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode	24
Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage	24
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors	24
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]	24
A Novel Electron Gun Design Approach With an Externally Assembled Anode	24
Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations	24
Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes	24
Source-Drain Series Resistance Model for N-Stack Nanosheet FETs Using Transmission Line Matrix Method	24
Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency	24
Frequency Adaptive Single-Transistor Neuron Based on Temporal Charge Trapping	24
Characterization and Analysis of 4H-SiC Super Junction JFETs Fabricated by Sidewall Implantation	24
Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture	24
High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors	24
Review of Quanta Image Sensors for Ultralow-Light Imaging	24
Analysis of SiC NPN Ultraviolet Phototransistor Under Ultrahigh Temperature	24
Comprehensive Study of Improved Negative-Bias-Illumination-Temperature Stress Stability in Terbium-Doped Indium-Zinc-Oxide Thin-Film Transistors	24
IEEE Transactions on Electron Devices Information for Authors	24
Enhancing Optical Performance for White Light-Emitting Diodes Using Quantum- Dots/Boron Nitride Hybrid Reflective Structure	24
Optimization of a Cusp Gun With a Grid for a Terahertz Gyrotron Traveling-Wave Amplifier	24
A Finite Element Analysis for Vacuum Amplifier Electron Gun of Fine Pencil Beam	24
A Physical Charge-Based Model for Transient Response of Metal Oxide Thin-Film Transistors Considering Relaxation of Trap States	23
Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept	23
Temperature-Dependent High Magnetoresistance in Zigzag Silicene Nanoribbon Heterostructure	23
A Photoelectric Synergistically Excited Cold-Cathode High-Frequency Radiation Source: From GHz to THz	23
Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate	23
Switching Dynamics of HfO2–ZrO2 Nanolaminates With Different Laminate Thicknesses	23
Computational Investigation of c-GaN/GaAs1–x N x /GaAs Heterojunction Solar Cell	23
A Wideband High-Power Microwave Mode Converter Using Vane-Loaded Waveguide	23
On-Chip Learning of Neural Network Using Spin-Based Activation Function Nodes	23
Role of Channel Inversion in Ambient Degradation of Phosphorene FETs	23
Reliability of Advanced Nodes	23
Thermionic Electron Emission Capacity of the Ba₃ScGa₂O₇.₅ Impregnated Cathode	23
A RepetitiveKu-Band Coaxial Relativistic Klystron Amplifier Packaged With Permanent Magnets	23
Resistive Switching Characteristics of HfO x -Based Memristor by Inserting GeTe Layer	23
Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution	23
Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA	23
Simulation of Parasitic Backward-Wave Excitation in High-Power Gyrotron Cavities	23
Neuromorphic System Using Crosspoint-Type TaO x /Ta Memristors and Direct Device Training for Associative Memory	23
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications	23
High-Sensitivity Single-Walled Carbon Nanotube/Graphene/Al₂O₃/Ge Near-Infrared Photodetector	23
Control of Resistive Switching Endurance in TiO2/TiO2–x Memristors via Thermally Assisted Oxygen Plasma With Power Modulation	23
Real-Time Ultraviolet Flame Detection System Based on 4H-SiC Phototransistor	23
Online Junction Temperature Detection for IGBTs Using Voltage Rise Time	23
The ESD Behavior of D-Mode GaN MIS-HEMT	22
Design and Cold Test of a G-Band 10-kW-Level Pulse TE01-Mode Gyrotron Traveling-Wave Tube	22
Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop	22
Dielectrics for 2-D Electronics: From Device to Circuit Applications	22
Tunable Synaptic Plasticity in Europium 2-D Perovskite ReRAM With Sub-0.5 V Switchings	22
SOT-MRAM-Based Design for Energy-Efficient and Reliable Binary Neural Network Acceleration	22
Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations	22
Impacts of SiO2-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers	22
A Data-Driven Remaining Useful Life Prediction Method for Power MOSFETs Considering Nonlinear Dynamical Behaviors	22
Investigation on Degradation of 1200-V Planar and Trench SiC MOSFET Under Surge Current Stress of Body Diode	22
High-Yield and Uniform NbO x -Based Threshold Switching Devices for Neuron Applications	22
Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor	22
Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure	22
Effect of Substrate Bias in Ohmic p-Gate GaN-HEMTs on Unclamped Inductive Switching Capability	22
Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum	22
A Cross-Band High-Power Microwave Generator With Wide Frequency Tunability Based on a Relativistic Magnetron and a Radial Transit-Time Oscillator	22
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter	22
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications	22
A Novel Self-Activated Gate-Clamping SiC MOSFET Enhancing Short Circuit Capability With Merit of Multicell Combination	22
Broadband Photodetector Based on SnS 2 /MoS 2 /CuO/WSe 2	22
A Neuromorphic Brain Interface Based on RRAM Crossbar Arrays for High Throughput Real-Time Spike Sorting	22
Evaluation of a Large Area, 83 μm Pixel Pitch Amorphous Selenium Indirect Flat Panel Detector	22
Device-Level Thermal Analysis for Gallium Oxide Lateral Field-Effect Transistor	22
Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases	22
Self-Heating Mitigation of TreeFETs by Interbridges	22
Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress	22
Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability	22
Study on Schottky Al x Ga1-x N/GaN IMPATT Diodes for Millimeter-Wave Application	22
Enhanced Resistive Switching Performances of Mn-Doped BiFeO₃ Memristor by Introducing Oxygen Reservoir Interface	21
Impact of Back-Gate Bias on the Total Ionizing Dose and Hot Carrier Injection Effects in Double SOI nMOSFETs	21
Electrothermal Design of Silicon-Doped Microheaters for Optical Phase Change Memory	21
Cu–Cu Bonded Microbump Interconnects With a 10-μm Pitch for 3-D-Stacked Chiplets	21
Carrier Mobility in a 55-nm CMOS at 4 K: Characterization, Modeling, and Circuit Implications	21