IEEE Transactions on Electron Devices

Papers
(The median citation count of IEEE Transactions on Electron Devices is 3. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)
ArticleCitations
IEEE Transactions on Electron Devices information for authors190
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors132
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency96
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O396
A 0.35-THz Extended Interaction Oscillator Based on Overmoded and Bi-Periodic Structure89
Cyclotron Resonance Maser With Zigzag Quasi-Optical Transmission Line: Concept and Modeling81
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs80
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs77
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements70
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT65
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”63
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs60
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor58
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material58
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates57
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator55
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals55
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform55
Utilizing Valley–Spin Hall Effect in Monolayer WSe2 for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops55
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors54
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron54
Changes in the Editorial Board53
Table of Contents51
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing51
Physical Compact Model for Source-Gated Transistors for DC Application50
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing50
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs49
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp49
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors49
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures49
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy49
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices49
Compact Modeling of Impact Ionization in High-Voltage Devices49
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect47
BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced Modeling47
Spontaneously Oxidized CuxO/β-Ga2O3 p-n Junction for Self-Powered Deep-Ultraviolet Photodetection46
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study46
Event-Driven CsPbBr3 Perovskite Visual Neurons for Motion Direction Recognition in Low-Light Scenes45
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C45
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective45
Metamaterial-Inspired 0.22 THz Traveling-Wave Tubes With Double Sheet Beams44
Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si44
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition44
L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection43
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell43
Design and Experiment of 1 THz Slow Wave Structure Fabricated by Nano-CNC Technology43
Proposal of Low-Loss Non-Volatile Mid-Infrared Optical Phase Shifter Based on Ge2Sb2Te3S242
Sigmoid Probabilistic Bits Using SiO Threshold Switching Devices for Probabilistic Computing41
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory41
15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W41
Compact E-Band Sheet Beam Folded Waveguide Traveling Wave Tube for High Data Rate Communication40
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension40
High Switching Speed and Stability ECM STO Resistive Memory on n+-Si Substrate Realized Using Cu Filament Mechanism40
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence40
High-Throughput Screening Ferroelectric–Dielectric Heterostructure for Robust Memristor and Artificial Synapse40
Accurate and Efficient Algorithm for Computing Structure Functions From the Spatial Distribution of Thermal Properties in Electronic Devices40
Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs40
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment39
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores38
Reliable Operation of FeFET Reservoir Computing With Robustness Against Interface Degradation38
Design of High-Sensitivity Piezoelectric Micromachined Ultrasonic Transducer Based on Single-Crystal Lithium Niobate Thin Films38
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator38
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness37
First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs Wi37
Defect-Engineered Resistive Switching in van der Waal Metals37
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen37
Temperature-Dependent Dynamic Ron of GaN E-HEMTs: The Impact of p-GaN Drain37
Unraveling the Impact of Cation Composition on Atomic Layer Deposited Ultrathin In–Sn–O Field-Effect Transistors37
Optimized Design of W-Band High-Power Folded-Waveguide Traveling-Wave Tube36
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop36
Linear Error Correction Codec Implementation Based on an In-Memory Computing Architecture for Nonvolatile Memories36
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch36
Endurance Study of Silicon-Doped Hafnium Oxide (HSO) and Zirconium-Doped Hafnium Oxide (HZO)-Based FeFET Memory36
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain36
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration36
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness35
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet35
Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET35
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying VG/VD Stress in GAA Nanosheet PFETs35
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration35
CRESCENT-1D: A 1-D Solver of Coupled Charge and Light Transport in Heterostructures for the Design of Near-Field Thermophotonic Engines34
Effect of X-Ray Irradiation on Colloidal Quantum Dot SWIR CMOS Image Sensor34
Peak Response Wavelength Tunable 4H-SiC UV Detector Covering Near-Ultraviolet Region With High-Temperature Stability and Radiation Hardness34
IEEE Transactions on Electron Devices Publication Information34
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode34
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors34
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol34
Stack Optimization of TiO x -Based Resistive Switching Devices Through Interface Engineering34
Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors34
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study34
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT34
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs33
Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation33
TiO2 Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells33
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization33
Low-Resistance and Thermally Stable Ohmic Contacts on n-GeSn Using Ni and Ti Metallization33
The Influence of Hole Transport in GaN Super-Heterojunction Transistor Switching Time33
Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application33
Fabrication and Characterization of Self-Assembled Low Voltage Operated OTFT for H2S Gas Sensor for Oil and Gas Industry33
Grating Perovskite Enhanced Polarization-Sensitive GaAs-Based Photodetector32
Design and Testing of Metal Photocathode X-Ray Source Based on Microchannel Plate32
Modeling and Analysis of Terminal Capacitances in High-Power Devices: Application to p-GaN Gate HEMTs32
Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature32
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO332
Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing32
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs32
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation32
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes32
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂32
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field32
Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”32
Highly Efficient Gyrotron Mode Converter With a Launcher Changing Angular Spectrum of the Operating Mode32
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress31
Plasma Jet Printing: An Introduction31
Performance Enhancement of Thin-Film Transistor Based on In2O3:F/In2O3 Homojunction31
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs31
A True Random Number Generator Based on High-Speed Ag/a-Si/Pt Memristor31
A Graphene/Ge Heterostructure-Based Short-Wavelength Infrared Photodetector With >1 AW--1 Responsivity Boosted by a CuI Antireflection Layer30
Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device30
Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format30
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs30
Alpha Particle Detection Using Highly Rectifying Ni/Ga 2 O 3 /4H-SiC Heteroepitaxial MOS Junction30
A Physics-Based Compact Model for Silicon Cold-Source Transistors30
Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs30
Compensation Method for Displacement Caused by CTE Mismatch in Micro-LED Bonding Process29
Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects29
Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs29
Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals29
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings29
Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory29
Frequency Doubler Based on Ferroelectric Tunnel Field-Effect Transistor29
Effect of Trap Behavior on Recombination in AlGaN-Based UV-C LEDs Degradation29
Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors28
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors28
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress28
IEEE Transactions on Electron Devices Information for Authors28
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors28
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing28
Novel Ultrafast Backscattered Electron Detector With Field-Effect Transistor Enhanced In Situ Signal Amplification28
Contact/via Failure Recovery Using Nanosecond Green Laser Annealing28
Impedance Spectroscopy of Hafnium Oxide: Memristive and Memcapacitive Switching With Annealing28
IEEE ELECTRON DEVICES SOCIETY28
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules28
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs28
Enhanced Resistive Switching in Flexible Hybrid RRAM Devices With PVK:MoS2/TiO2 Bilayer28
Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact28
TechRxiv: Share Your Preprint Research with the World!28
IEEE ELECTRON DEVICES SOCIETY27
IEEE Transactions on Electron Devices Information for Authors27
Cu–Cu Bonded Microbump Interconnects With a 10-μm Pitch for 3-D-Stacked Chiplets27
Neuromorphic System Using Crosspoint-Type TaO x /Ta Memristors and Direct Device Training for Associative Memory27
IEEE ELECTRON DEVICES SOCIETY27
Mathematical Modeling of Field Emission From a Microscale-Size Cathode to a Vacuum27
Two-Dimensional Photothermal Modeling of Multichip LEDs Device With Thermal Coupling Matrix by Microscopic Hyperspectral Imaging27
A Difference-Microvariation Solution and Analytical Model for Generic HEMTs27
Highly Sensitive Free-Standing Waveguide-Integrated Bolometer on Germanium-on-Insulator Platform for Mid-Infrared On-Chip Spectroscopy27
Multiscale Modeling of Self-Heating-Induced and Deformation-Accelerated Dielectric Traps Impacting Critical Path of Dielectric Breakdown in 5-nm Stacked Nanosheet FET27
IEEE Transactions on Electron Devices information for authors27
Design and Power Capacity Investigation of a Q-Band 100-kW-Continuous-Wave Gyro-TWT27
Device-Level Thermal Analysis for Gallium Oxide Lateral Field-Effect Transistor27
Investigation of a Low-Loss Transmission Structure for W-Band TWT27
Avalanche Multiplication Factor Modeling and Extraction at High Currents in SiGe HBTs26
Blank Page26
Switching Dynamics of HfO2–ZrO2 Nanolaminates With Different Laminate Thicknesses26
A Physical Charge-Based Model for Transient Response of Metal Oxide Thin-Film Transistors Considering Relaxation of Trap States26
Improvement of Electron Gun Breakdown Performance Through Surface Flashover and Discharge Studies26
A Capacitance Extraction Method Using Local Discontinuous Galerkin Method on Adaptive Triangular Meshes26
Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients26
IEEE Transactions on Electron Devices Information for Authors26
Design and Development of Polarization-Enhanced E-Mode GaN p-FET and Complementary Logic (CL) Circuits26
Impact of Back-Gate Bias on the Total Ionizing Dose and Hot Carrier Injection Effects in Double SOI nMOSFETs26
Impact of Nonuniform Ozone Anneal Treatment on the Resistance Levels in an IGZO-ReRAM Fabricated on ITO-Coated Glass Substrate26
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors25
Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling25
A Finite Element Analysis for Vacuum Amplifier Electron Gun of Fine Pencil Beam25
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs25
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs25
Impacts of SiO2-Buried Structure on Performances of GaN-Based Vertical-Cavity Surface-Emitting Lasers25
IEEE Transactions on Electron Devices Information for Authors25
A Cross-Band High-Power Microwave Generator With Wide Frequency Tunability Based on a Relativistic Magnetron and a Radial Transit-Time Oscillator25
High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates25
Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA25
Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application25
Plateau Voltage and Dynamic Capacitance Effect on SiC MOSFETs’ Gate Ringing25
Improved Scalability of Negative Capacitance Junctionless Transistors With Underlap Design25
Investigation of Threshold Voltage Instability of SiC MOSFETs Under Different Gate Voltage Sequences25
Junction Temperature Correction Method for SiC MOSFET Based on Turn-Off Oscillation Frequency of Drain-Source Voltage24
Resistive Switching Characteristics of HfO x -Based Memristor by Inserting GeTe Layer24
Corrections to “Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review” [Mar 14 651-665]24
Cross-Coupled Gated Tunneling Diodes With Unprecedented PVCRs Enabling Compact SRAM Design—Part I: Device Concept24
A Novel Electron Gun Design Approach With an Externally Assembled Anode24
Enhanced Resistive Switching Performances of Mn-Doped BiFeO₃ Memristor by Introducing Oxygen Reservoir Interface24
Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations24
Enhancing Optical Performance for White Light-Emitting Diodes Using Quantum- Dots/Boron Nitride Hybrid Reflective Structure24
Design and Cold Test of a G-Band 10-kW-Level Pulse TE01-Mode Gyrotron Traveling-Wave Tube24
High-Performance Flexible Solution-Processed Organic Nonvolatile Memory Transistors24
Machine-Learning-Assisted Anchor Loss Reduction of MEMS Resonator With One-Dimensional Phononic Crystal Tether24
Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit24
Optimization of a Cusp Gun With a Grid for a Terahertz Gyrotron Traveling-Wave Amplifier24
Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture24
A Data-Driven Remaining Useful Life Prediction Method for Power MOSFETs Considering Nonlinear Dynamical Behaviors23
Control of Resistive Switching Endurance in TiO2/TiO2–x Memristors via Thermally Assisted Oxygen Plasma With Power Modulation23
The ESD Behavior of D-Mode GaN MIS-HEMT23
Thermionic Electron Emission Capacity of the Ba₃ScGa₂O₇.₅ Impregnated Cathode23
A Photoelectric Synergistically Excited Cold-Cathode High-Frequency Radiation Source: From GHz to THz23
Characterization and Analysis of 4H-SiC Super Junction JFETs Fabricated by Sidewall Implantation23
Electrical Stability of MOS Structures With AlON and Al₂O₃ Dielectrics Deposited on n- and p-Type GaN23
Reliability of Advanced Nodes23
An Analytical Model of RRAM Relaxation Effect and Its Application for Neural Network Weight Refresh Strategy in Large-Scale RRAM Array23
Source-Drain Series Resistance Model for N-Stack Nanosheet FETs Using Transmission Line Matrix Method23
Novel Low-Loss 0.65-THz Multisectional Folded Waveguide High-Frequency Circuit23
Demonstration of 1.2-kV Rated Novel Power Poly-Si/4H-SiC Heterojunction Diode With Record Low Forward Voltage Drop23
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Wide Band Gap Semiconductors for Automotive Applications23
Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress23
High-Sensitivity Single-Walled Carbon Nanotube/Graphene/Al₂O₃/Ge Near-Infrared Photodetector23
Multiport Relativistic Magnetron for Phased Array Application22
Analysis of SiC NPN Ultraviolet Phototransistor Under Ultrahigh Temperature22
Real-Time Ultraviolet Flame Detection System Based on 4H-SiC Phototransistor22
Effect of Substrate Bias in Ohmic p-Gate GaN-HEMTs on Unclamped Inductive Switching Capability22
A Wideband High-Power Microwave Mode Converter Using Vane-Loaded Waveguide22
Review of Quanta Image Sensors for Ultralow-Light Imaging22
On-Chip Learning of Neural Network Using Spin-Based Activation Function Nodes22
Study on Schottky Al x Ga1-x N/GaN IMPATT Diodes for Millimeter-Wave Application22
Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress22
Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers22
Thermal Dynamic of Single-Event Burnout in SiC Power MOSFETs22
Role of Channel Inversion in Ambient Degradation of Phosphorene FETs22
Comprehensive Study of Improved Negative-Bias-Illumination-Temperature Stress Stability in Terbium-Doped Indium-Zinc-Oxide Thin-Film Transistors22
1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination22
Temperature-Dependent High Magnetoresistance in Zigzag Silicene Nanoribbon Heterostructure22
Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution22
Single-Event Effects of AlGaN/GaN HEMTs Under Different Biases22
Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure22
Frequency Adaptive Single-Transistor Neuron Based on Temporal Charge Trapping22
Evaluation of a Large Area, 83 μm Pixel Pitch Amorphous Selenium Indirect Flat Panel Detector22
Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate22
Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency22
Novel Enhance-Mode AlGaN/GaN JFET With BV of Over 1.2 kV Maintaining Low R ON,sp22
An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode22
Self-Heating Mitigation of TreeFETs by Interbridges22
Eliminating the Double-Slope Behavior of Organic Field-Effect Transistors by Functionalizing the Dielectric Surface With a High Electron Affinity Self-Assembly Monolayer22
Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor21
Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations21
Low-Power Ultradeep-Submicrometer Junctionless Carbon Nanotube Field-Effect Diode21
Computational Investigation of c-GaN/GaAs1–x N x /GaAs Heterojunction Solar Cell21
Simulation of Parasitic Backward-Wave Excitation in High-Power Gyrotron Cavities21
High-Yield and Uniform NbO x -Based Threshold Switching Devices for Neuron Applications21
Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition21
Dielectrics for 2-D Electronics: From Device to Circuit Applications21
An Easy-to-Fabricate Circular TE₂₁/TE₀₁ Mode Generator21
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