IEEE Transactions on Electron Devices

Papers
(The median citation count of IEEE Transactions on Electron Devices is 2. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-04-01 to 2024-04-01.)
ArticleCitations
The Past, the Present, and the Future of Ferroelectric Memories230
ReRAM: History, Status, and Future153
Magnetoresistive Random Access Memory: Present and Future117
3-D NAND Technology Achievements and Future Scaling Perspectives113
High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS95
Vertical β-Ga₂O₃ Power Transistors: A Review95
Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond82
The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia80
1T-1C Dynamic Random Access Memory Status, Challenges, and Prospects79
Improved Photoresponse Performance of Self-Powered β-Ga₂O₃/NiO Heterojunction UV Photodetector by Surface Plasmonic Effect of Pt Nanoparticles77
Artificial Neural Network-Based Compact Modeling Methodology for Advanced Transistors76
(Ultra)Wide-Bandgap Vertical Power FinFETs76
FeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric74
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices74
Extended-Source Double-Gate Tunnel FET With Improved DC and Analog/RF Performance73
1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability70
Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions65
Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits60
Design, Performance, and Defect Density Analysis of Efficient Eco-Friendly Perovskite Solar Cell59
Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)58
Ferroelectric Field Effect Transistors as a Synapse for Neuromorphic Application55
Opportunities in Device Scaling for 3-nm Node and Beyond: FinFET Versus GAA-FET Versus UFET55
Optimization of Negative-Capacitance Vertical-Tunnel FET (NCVT-FET)52
Investigation of CsSn0.5Ge0.5I3-on-Si Tandem Solar Device Utilizing SCAPS Simulation47
Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses45
Laser-Induced Graphene Printed Wearable Flexible Antenna-Based Strain Sensor for Wireless Human Motion Monitoring45
Infrared Colloidal Quantum Dot Image Sensors44
Investigation of Carrier Transport Materials for Performance Assessment of Lead-Free Perovskite Solar Cells44
PDMS-Based Microfluidic Glucose Biofuel Cell Integrated With Optimized Laser-Induced Flexible Graphene Bioelectrodes44
Design Insights of Nanosheet FET and CMOS Circuit Applications at 5-nm Technology Node43
Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V BDR ON Tradeoff and RF PA Performance43
Deep-Level Traps in AlGaN/GaN- and AlInN/GaN-Based HEMTs With Different Buffer Doping Technologies43
Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress42
Vertical P-TFET With a P-Type SiGe Pocket42
1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current41
Encapsulated X-Ray Detector Enabled by All-Inorganic Lead-Free Perovskite Film With High Sensitivity and Low Detection Limit40
“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs39
Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study39
A Review of Hot Carrier Degradation in n-Channel MOSFETs—Part I: Physical Mechanism39
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I38
In-Memory PageRank Accelerator With a Cross-Point Array of Resistive Memories38
Compact Modeling of Temperature Effects in FDSOI and FinFET Devices Down to Cryogenic Temperatures38
Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor38
Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃37
N+ Pocket-Doped Vertical TFET for Enhanced Sensitivity in Biosensing Applications: Modeling and Simulation37
Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs37
High-k HfxZr1-xO₂ Ferroelectric Insulator by Utilizing High Pressure Anneal36
Graphene/PtSe2/Pyramid Si van Der Waals Schottky Junction for Room-Temperature Broadband Infrared Light Detection36
Challenges and Trends inDeveloping Nonvolatile Memory-Enabled Computing Chips for Intelligent Edge Devices36
Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior36
Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training36
Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics35
High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer35
A Parallel Multibit Programing Scheme With High Precision for RRAM-Based Neuromorphic Systems35
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking35
Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen 35
SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge34
Synergistic Modulation of Synaptic Plasticity in IGZO-Based Photoelectric Neuromorphic TFTs34
Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors34
Characteristics of Stacked Gate-All-Around Si Nanosheet MOSFETs With Metal Sidewall Source/Drain and Their Impacts on CMOS Circuit Properties33
Enhanced Charge Extraction in Metal–Perovskite–Metal Back-Contact Solar Cell Structure Through Electrostatic Doping: A Numerical Study33
Soft-Error Resilient Read Decoupled SRAM With Multi-Node Upset Recovery for Space Applications33
Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format33
Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing33
Investigation of Electrical Characteristic Behavior Induced by Channel-Release Process in Stacked Nanosheet Gate-All-Around MOSFETs32
Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD32
HRS Instability in Oxide-Based Bipolar Resistive Switching Cells32
Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs32
Numerical Simulation: Design of High-Efficiency Planar p-n Homojunction Perovskite Solar Cells31
TCAD-Augmented Machine Learning With and Without Domain Expertise31
Optimized Substrate for Improved Performance of Stacked Nanosheet Field-Effect Transistor31
Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications31
Hydrothermal Synthesis and Improved CH₃OH-Sensing Performance of ZnO Nanorods With Adsorbed Au NPs31
Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration31
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II31
Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions30
16 × 4 Linear Solar-Blind UV Photoconductive Detector Array Based on β-Ga2O3 Film30
Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices30
A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems30
Lightweight Integrated Design of PUF and TRNG Security Primitives Based on eFlash Memory in 55-nm CMOS30
Modeling of Photovoltaic Solar Cell Based on CuSbS₂ Absorber for the Enhancement of Performance29
Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron29
Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO₂ Electrode29
Computing-in-Memory Architecture Using Energy-Efficient Multilevel Voltage-Controlled Spin-Orbit Torque Device29
A Vertical Combo Spacer to Optimize Electrothermal Characteristics of 7-nm Nanosheet Gate-All-Around Transistor29
Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters29
Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiOx Gate Materials29
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization29
Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs28
Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory28
CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications28
Low Thermal Budget (<250 °C) Dual-Gate Amorphous Indium Tungsten Oxide (IWO) Thin-Film Transistor for Monolithic 3-D Integration28
Computational Investigation of Negative Capacitance Coaxially Gated Carbon Nanotube Field-Effect Transistors28
Investigation of Read Disturb and Bipolar Read Scheme on Multilevel RRAM-Based Deep Learning Inference Engine28
Effect of Gate-Oxide Degradation on Electrical Parameters of Silicon Carbide MOSFETs28
A Highly Scalable Junctionless FET Leaky Integrate-and-Fire Neuron for Spiking Neural Networks28
Exploration of Negative Capacitance in Gate-All-Around Si Nanosheet Transistors28
Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfZr₁₋O₂Capacitors27
A Unified PUF and TRNG Design Based on 40-nm RRAM With High Entropy and Robustness for IoT Security27
Modeling of Short-Channel Effects in GaN HEMTs27
Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel27
Stress Engineering as a Strategy to Achieve High Ferroelectricity in Thick Hafnia Using Interlayer27
Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors27
Technology, Assembly, and Test of a W-Band Traveling Wave Tube for New 5G High-Capacity Networks27
Applying Conformal Mapping to Derive Analytical Solutions of Space-Charge-Limited Current Density for Various Geometries27
Highly Sensitive Narrowband Si Photodetector With Peak Response at Around 1060 nm27
Hetero-Interfacial Thermal Resistance Effects on Device Performance of Stacked Gate-All-Around Nanosheet FET27
Enhanced Linearity in CBRAM Synapse by Post Oxide Deposition Annealing for Neuromorphic Computing Applications27
Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation26
Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing26
FDTD-Based Optimization of Geometrical Parameters and Material Properties for GaAs-Truncated Nanopyramid Solar Cells26
Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs26
Hydrogen Diffusion and Threshold Voltage Shifts in Top-Gate Amorphous InGaZnO Thin-Film Transistors26
Time Complexity of In-Memory Solution of Linear Systems26
SiC Trench MOSFET With Reduced Switching Loss and Increased Short-Circuit Capability26
On the Trap Locations in Bulk FinFETs After Hot Carrier Degradation (HCD)26
Design Optimization Techniques in Nanosheet Transistor for RF Applications26
Reducing Power Consumption of Active-Matrix Mini-LED Backlit LCDs by Driving Circuit26
GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD26
A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs25
A Comprehensive Study of Nanosheet and Forksheet SRAM for Beyond N5 Node25
Revisiting the Time-Domain and Frequency-Domain Definitions of Capacitance25
AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity25
Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation25
Oxygen Vacancy-Dependent Synaptic Dynamic Behavior of TiO x -Based Transparent Memristor25
Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements25
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs25
Investigation on Single Pulse Avalanche Failure of 1200-V SiC MOSFETs via Optimized Thermoelectric Simulation24
Toward Automated Defect Extraction From Bias Temperature Instability Measurements24
Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs24
Study on Multilevel Resistive Switching Behavior With Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM24
Double-Gate Junctionless 1T DRAM With Physical Barriers for Retention Improvement24
Robust Breakdown Reliability and Improved Endurance in Hf0.5Zr0.5O2 Ferroelectric Using Grain Boundary Interruption24
Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs24
PIC Simulation of Pseudospark Discharge-Based Plasma Cathode Electron Source for the Generation of High Current Density and Energetic Electron Beam24
Electro-Thermal Performance Boosting in Stacked Si Gate-all-Around Nanosheet FET With Engineered Source/Drain Contacts24
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs24
Reduction of Process Variations for Sub-5-nm Node Fin and Nanosheet FETs Using Novel Process Scheme24
Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode24
BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update24
Exceptional Responsivity (>6 kA/W) and Dark Current (<70 fA) Tradeoff of n-Ga2O3/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector24
Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact24
A Monolithic 3-D Integration of RRAM Array and Oxide Semiconductor FET for In-Memory Computing in 3-D Neural Network24
Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies24
Monolayer MoSe₂-Based Tunneling Field Effect Transistor for Ultrasensitive Strain Sensing24
RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays24
Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure24
Design and Characterization of an Aluminum Nitride-Based MEMS Hydrophone With Biologically Honeycomb Architecture24
Active-Matrix Micro-LED Display Driven by Metal Oxide TFTs Using Digital PWM Method24
Advanced DFT–NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS2/WSe2 van der Waals Heterojunction TFET and WTe2/WS2 Meta24
Simulation-Based Ultralow Energy and High-Speed LIF Neuron Using Silicon Bipolar Impact Ionization MOSFET for Spiking Neural Networks23
Array-Level Programming of 3-Bit per Cell Resistive Memory and Its Application for Deep Neural Network Inference23
Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method23
A Review of Indirect Time-of-Flight Technologies23
Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm223
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part II: Mechanism and Modeling23
Analysis of the Ultrafast Transient Heat Transport in Sub 7-nm SOI FinFETs Technology Nodes Using Phonon Hydrodynamic Equation23
Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹23
MOSFETs on (110) C–H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization23
Highly Sensitive Wearable Flexible Pressure Sensor Based on Conductive Carbon Black/Sponge23
Variability and Energy Consumption Tradeoffs in Multilevel Programming of RRAM Arrays23
Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length23
Accurate Computation of IGBT Junction Temperature in PLECS23
Ultrahighly Sensitive QCM Humidity Sensor Based on Nafion/MoS2 Hybrid Thin Film23
Self-Activation Neural Network Based on Self-Selective Memory Device With Rectified Multilevel States23
Fully Depleted MAPS in 110-nm CMOS Process With 100–300-μm Active Substrate23
High-Performance Inverted Structure Broadband Photodetector Based on ZnO Nanorods/PCDTBT:PCBM:PbS QDs23
Digital Performance Assessment of the Dual-Material Gate GaAs/InAs/Ge Junctionless TFET23
Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process23
Analysis of Self-Heating Effects in Multi-Nanosheet FET Considering Bottom Isolation and Package Options23
Sensitivity Analysis of a Novel Negative Capacitance FinFET for Label-Free Biosensing22
Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs22
Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr1-x 22
Optimization of Hetero-Gate-Dielectric Tunnel FET for Label-Free Detection and Identification of Biomolecules22
Noise-Resilient DNN: Tolerating Noise in PCM-Based AI Accelerators via Noise-Aware Training22
Direct Time-of-Flight Single-Photon Imaging22
Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD22
Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films22
InAlN/GaN HEMT on Si With fmax = 270 GHz22
Investigation of Sidewall High-k Interfacial Layer Effect in Gate-All-Around Structure22
Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling22
0.5T0.5R—An Ultracompact RRAM Cell Uniquely Enabled by van der Waals Heterostructures22
High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates22
Hot Carrier Effect in Self-Aligned In–Ga–Zn–O Thin-Film Transistors With Short Channel Length22
Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown22
Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs22
Theoretical Study of Charge Carrier Lifetime and Recombination on the Performance of Eco-Friendly Perovskite Solar Cell22
Alternated Trench-Gate IGBT for Low Loss and Suppressing Negative Gate Capacitance22
Volatile and Nonvolatile Memory Operations Implemented in a Pt/HfO₂/Ti Memristor22
Design of High Robustness BNN Inference Accelerator Based on Binary Memristors22
Study of a High-Performance Chemoresistive Ethanol Gas Sensor Synthesized With Au Nanoparticles and an Amorphous IGZO Thin Film22
Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process21
Output-Power Enhancement of Vircator Based on Second Virtual Cathode Formed by Wall Charge on a Dielectric Reflector21
Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs21
Study on 1-THz Sine Waveguide Traveling-Wave Tube21
Acceleration of Semiconductor Device Simulation With Approximate Solutions Predicted by Trained Neural Networks21
The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System21
A Physical Model for Bulk Gate Insulator Trap Generation During Bias-Temperature Stress in Differently Processed p-Channel FETs21
Silicene/MoS2 Heterojunction for High-Performance Photodetector21
Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics21
Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach21
Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling21
Effect of Aluminum Doping on Performance of HfO-Based Flexible Resistive Memory Devices21
Memristor Based on TiO x /Al2O3 Bilayer as Flexible Artificial Synapse for Neuromorphic Electronics21
Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation21
Heat Dissipation Enhancement of Phosphor-Converted White Laser Diodes by Thermally Self-Managing Phosphor-in-Glass21
Matrix-Addressed Flexible Capacitive Pressure Sensor With Suppressed Crosstalk for Artificial Electronic Skin21
An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor21
Exploiting Carbon Nanotube FET and Magnetic Tunneling Junction for Near-Memory-Computing Paradigm21
Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode21
BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polariza21
Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications21
Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs21
Investigation of a Highly Sensitive Au Nanoparticle-Modified ZnO Nanorod Humidity Sensor21
Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT With Embedded P-Type Schottky Barrier Diode20
Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack20
High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O320
Evolution of Image Sensor Architectures With Stacked Device Technologies20
Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors20
Highly Sensitive, Wide-Range, and Flexible Pressure Sensor Based on Honeycomb-Like Graphene Network20
Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology20
MHz Repetition Frequency, Hundreds Kilowatt, and Sub-Nanosecond Agile Pulse Generation Based on Linear 4H-SiC Photoconductive Semiconductor20
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V G, V D} Bias Space: Implications and Peculiarities20
Electron-Optic System With a Converged Sheet Electron Beam for a 0.2-THz Traveling-Wave Tube20
Low-Frequency Noise Assessment of Vertically Stacked Si n-Channel Nanosheet FETs With Different Metal Gates20
Study of a Platinum (Pt) Nanoparticle (NP)/Vanadium Pentoxide (V2O5) Thin Film-Based Ammonia Gas Sensor20
Impact of Nonuniform Thermionic Emission on the Transition Behavior Between Temperature-and Space-Charge-Limited Emission20
Demonstration of a High-Power Ka-Band Extended Interaction Klystron20
Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension20
Fabrication of Binder-Free TiO2 Nanofiber Electrodes via Electrophoretic Deposition for Low-Power Electronic Applications20
Low Subthreshold Swing and High Performance of Ultrathin PEALD InGaZnO Thin-Film Transistors20
Bridging TCAD and AI: Its Application to Semiconductor Design20
A High Near-Infrared Sensitivity Over 70-dB SNR CMOS Image Sensor With Lateral Overflow Integration Trench Capacitor20
Amplified Methanol Sensitivity in Reduced Graphene Oxide FET Using Appropriate Gate Electrostatic20
Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga2O3Deep-Ultraviolet Photodetector20
Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications20
Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension20
Compact Single-Phase-Search Multistate Content-Addressable Memory Design Using One FeFET/Cell20
ON-Resistance of Ga2O3 Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping20
Logic Device Based on Skyrmion Annihilation20
Ga₂O₃/V₂O₅ Oxide Heterojunction Photovoltaic Photodetector With Superhigh Solar-Blind Spectral Discriminability20
Top-Gate Amorphous Indium-Gallium-Zinc-OxideThin-Film Transistors With Magnesium Metallized Source/Drain Regions19
Scalable mmWave Non-Volatile Phase Change GeTe-Based Compact Monolithically Integrated Wideband Digital Switched Attenuator19
High Performance Flexible Transistors With Polyelectrolyte/Polymer Bilayer Dielectric19
Temporal Electron-Spin Splitter Based on a Semiconductor Microstructure Constructed on Surface of InAs/AlxIn1-x As Heterostructure by Patterning a Ferromagnetic Stripe and a Scho19
Distinct Failure Modes of AlGaN/GaN HEMTs Under ESD Conditions19
Thermal Brownian Motion of Skyrmion for True Random Number Generation19
Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing19
Characterization and Extraction of Power Loop Stray Inductance With SiC Half-Bridge Power Module19
A New Analog PWM Pixel Circuit With Metal Oxide TFTs for Micro-LED Displays19
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