IEEE Transactions on Electron Devices

Papers
(The median citation count of IEEE Transactions on Electron Devices is 3. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-09-01 to 2024-09-01.)
ArticleCitations
High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS106
Vertical β-Ga₂O₃ Power Transistors: A Review106
The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia104
Artificial Neural Network-Based Compact Modeling Methodology for Advanced Transistors99
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices88
(Ultra)Wide-Bandgap Vertical Power FinFETs79
1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability77
Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits65
Ferroelectric Field Effect Transistors as a Synapse for Neuromorphic Application65
Laser-Induced Graphene Printed Wearable Flexible Antenna-Based Strain Sensor for Wireless Human Motion Monitoring60
Investigation of Carrier Transport Materials for Performance Assessment of Lead-Free Perovskite Solar Cells59
Graphene/PtSe2/Pyramid Si van Der Waals Schottky Junction for Room-Temperature Broadband Infrared Light Detection58
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking58
Investigation of CsSn0.5Ge0.5I3-on-Si Tandem Solar Device Utilizing SCAPS Simulation57
Infrared Colloidal Quantum Dot Image Sensors56
Design Insights of Nanosheet FET and CMOS Circuit Applications at 5-nm Technology Node55
Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses55
Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor53
Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress49
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I47
“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs47
High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer47
Compact Modeling of Temperature Effects in FDSOI and FinFET Devices Down to Cryogenic Temperatures46
Low Thermal Budget (<250 °C) Dual-Gate Amorphous Indium Tungsten Oxide (IWO) Thin-Film Transistor for Monolithic 3-D Integration44
Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study44
Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen 42
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II42
Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training42
1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current42
Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format41
Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃41
SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge40
Synergistic Modulation of Synaptic Plasticity in IGZO-Based Photoelectric Neuromorphic TFTs40
Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors38
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization38
Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior38
Soft-Error Resilient Read Decoupled SRAM With Multi-Node Upset Recovery for Space Applications38
Hydrothermal Synthesis and Improved CH₃OH-Sensing Performance of ZnO Nanorods With Adsorbed Au NPs38
Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs38
Numerical Simulation: Design of High-Efficiency Planar p-n Homojunction Perovskite Solar Cells37
TCAD-Augmented Machine Learning With and Without Domain Expertise37
Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration37
Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions37
Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters37
Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics37
Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach37
A Highly Scalable Junctionless FET Leaky Integrate-and-Fire Neuron for Spiking Neural Networks36
Design and Characterization of an Aluminum Nitride-Based MEMS Hydrophone With Biologically Honeycomb Architecture36
HRS Instability in Oxide-Based Bipolar Resistive Switching Cells36
AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity35
Robust Breakdown Reliability and Improved Endurance in Hf0.5Zr0.5O2 Ferroelectric Using Grain Boundary Interruption35
Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing35
Hydrogen Impacts of PEALD InGaZnO TFTs Using SiOx Gate Insulators Deposited by PECVD and PEALD35
Characteristics of Stacked Gate-All-Around Si Nanosheet MOSFETs With Metal Sidewall Source/Drain and Their Impacts on CMOS Circuit Properties35
Optimized Substrate for Improved Performance of Stacked Nanosheet Field-Effect Transistor35
Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors34
A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs34
16 × 4 Linear Solar-Blind UV Photoconductive Detector Array Based on β-Ga2O3 Film34
Enhanced Charge Extraction in Metal–Perovskite–Metal Back-Contact Solar Cell Structure Through Electrostatic Doping: A Numerical Study34
Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications34
A Unified PUF and TRNG Design Based on 40-nm RRAM With High Entropy and Robustness for IoT Security34
Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfZr₁₋O₂Capacitors34
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs33
Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode33
Exploration of Negative Capacitance in Gate-All-Around Si Nanosheet Transistors33
Design Optimization Techniques in Nanosheet Transistor for RF Applications33
Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices33
A Review of Indirect Time-of-Flight Technologies32
Reducing Power Consumption of Active-Matrix Mini-LED Backlit LCDs by Driving Circuit32
Advancing Monolayer 2-D nMOS and pMOS Transistor Integration From Growth to Van Der Waals Interface Engineering for Ultimate CMOS Scaling32
Enhanced Linearity in CBRAM Synapse by Post Oxide Deposition Annealing for Neuromorphic Computing Applications32
Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel32
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part II: Mechanism and Modeling32
Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension32
Unraveling the Dynamics of Charge Trapping and De-Trapping in Ferroelectric FETs32
Modeling of Photovoltaic Solar Cell Based on CuSbS₂ Absorber for the Enhancement of Performance32
Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs32
Evolution of Image Sensor Architectures With Stacked Device Technologies32
Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs32
Highly Sensitive Wearable Flexible Pressure Sensor Based on Conductive Carbon Black/Sponge31
Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure31
Hetero-Interfacial Thermal Resistance Effects on Device Performance of Stacked Gate-All-Around Nanosheet FET30
Investigation on Single Pulse Avalanche Failure of 1200-V SiC MOSFETs via Optimized Thermoelectric Simulation30
Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact30
Stress Engineering as a Strategy to Achieve High Ferroelectricity in Thick Hafnia Using Interlayer30
Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors30
Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiOx Gate Materials30
Advanced DFT–NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS2/WSe2 van der Waals Heterojunction TFET and WTe2/WS2 Meta30
Computational Investigation of Negative Capacitance Coaxially Gated Carbon Nanotube Field-Effect Transistors30
Fabrication and Characterization of High-Voltage NiO/β-Ga2O3 Heterojunction Power Diodes30
Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr1-x 30
InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz29
Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory29
BEOL-Compatible Superlattice FEFET Analog Synapse With Improved Linearity and Symmetry of Weight Update29
GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD29
Machine Learning Aided Device Simulation of Work Function Fluctuation for Multichannel Gate-All-Around Silicon Nanosheet MOSFETs29
Direct Time-of-Flight Single-Photon Imaging29
FDTD-Based Optimization of Geometrical Parameters and Material Properties for GaAs-Truncated Nanopyramid Solar Cells29
Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs29
Study on Multilevel Resistive Switching Behavior With Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM29
Toward Automated Defect Extraction From Bias Temperature Instability Measurements28
Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology28
A Comprehensive Study of Nanosheet and Forksheet SRAM for Beyond N5 Node28
Array-Level Programming of 3-Bit per Cell Resistive Memory and Its Application for Deep Neural Network Inference28
Exceptional Responsivity (>6 kA/W) and Dark Current (<70 fA) Tradeoff of n-Ga2O3/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector28
CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications28
Variability and Energy Consumption Tradeoffs in Multilevel Programming of RRAM Arrays28
Digital Performance Assessment of the Dual-Material Gate GaAs/InAs/Ge Junctionless TFET28
InAlN/GaN HEMT on Si With fmax = 270 GHz28
Study of a High-Performance Chemoresistive Ethanol Gas Sensor Synthesized With Au Nanoparticles and an Amorphous IGZO Thin Film28
Active-Matrix Micro-LED Display Driven by Metal Oxide TFTs Using Digital PWM Method28
Applying Conformal Mapping to Derive Analytical Solutions of Space-Charge-Limited Current Density for Various Geometries28
Ferroelectric Hafnium Zirconium Oxide Compatible With Back-End-of-Line Process28
Analysis of Self-Heating Effects in Multi-Nanosheet FET Considering Bottom Isolation and Package Options28
Revisiting the Time-Domain and Frequency-Domain Definitions of Capacitance28
SiC Trench MOSFET With Reduced Switching Loss and Increased Short-Circuit Capability28
Bridging TCAD and AI: Its Application to Semiconductor Design27
High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates27
Oxygen Vacancy-Dependent Synaptic Dynamic Behavior of TiO x -Based Transparent Memristor27
Design and Investigation of Dielectrically Modulated Dual-Material Gate-Oxide-Stack Double-Gate TFET for Label-Free Detection of Biomolecules27
Analysis of the Ultrafast Transient Heat Transport in Sub 7-nm SOI FinFETs Technology Nodes Using Phonon Hydrodynamic Equation27
Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD27
A New Analog PWM Pixel Circuit With Metal Oxide TFTs for Micro-LED Displays27
Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown27
Memristor Based on TiO x /Al2O3 Bilayer as Flexible Artificial Synapse for Neuromorphic Electronics27
On DRAM Rowhammer and the Physics of Insecurity27
Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga2O3Deep-Ultraviolet Photodetector27
0.5T0.5R—An Ultracompact RRAM Cell Uniquely Enabled by van der Waals Heterostructures27
Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies27
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs26
Monolithic Comparator and Sawtooth Generator of AlGaN/GaN MIS-HEMTs With Threshold Voltage Modulation for High-Temperature Applications26
Volatile and Nonvolatile Memory Operations Implemented in a Pt/HfO₂/Ti Memristor26
Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation26
Compact Single-Phase-Search Multistate Content-Addressable Memory Design Using One FeFET/Cell26
Deep Learning-Based BSIM-CMG Parameter Extraction for 10-nm FinFET26
Sensitivity Analysis of a Novel Negative Capacitance FinFET for Label-Free Biosensing26
Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements26
Investigation of a Highly Sensitive Au Nanoparticle-Modified ZnO Nanorod Humidity Sensor26
MOSFETs on (110) C–H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization26
Low Subthreshold Swing and High Performance of Ultrathin PEALD InGaZnO Thin-Film Transistors26
Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films26
RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays26
Heat Dissipation Enhancement of Phosphor-Converted White Laser Diodes by Thermally Self-Managing Phosphor-in-Glass26
A Monolithic 3-D Integration of RRAM Array and Oxide Semiconductor FET for In-Memory Computing in 3-D Neural Network26
ON-Resistance of Ga2O3 Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping25
Electro-Thermal Performance Boosting in Stacked Si Gate-all-Around Nanosheet FET With Engineered Source/Drain Contacts25
Acceleration of Semiconductor Device Simulation With Approximate Solutions Predicted by Trained Neural Networks25
Monolithic Integration of Oxide Semiconductor FET and Ferroelectric Capacitor Enabled by Sn-Doped InGaZnO for 3-D Embedded RAM Application25
Exploiting Carbon Nanotube FET and Magnetic Tunneling Junction for Near-Memory-Computing Paradigm25
Optimization of NiO/β-Ga2O3 Heterojunction Diodes for High-Power Application25
MHz Repetition Frequency, Hundreds Kilowatt, and Sub-Nanosecond Agile Pulse Generation Based on Linear 4H-SiC Photoconductive Semiconductor25
Comprehensive Variability Analysis in Dual-Port FeFET for Reliable Multi-Level-Cell Storage25
Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method25
Experimental Results for AlGaN/GaN HEMTs Improving Breakdown Voltage and Output Current by Electric Field Modulation25
Ga₂O₃/V₂O₅ Oxide Heterojunction Photovoltaic Photodetector With Superhigh Solar-Blind Spectral Discriminability25
Self-Activation Neural Network Based on Self-Selective Memory Device With Rectified Multilevel States25
High-Performance Inverted Structure Broadband Photodetector Based on ZnO Nanorods/PCDTBT:PCBM:PbS QDs25
Vertical Cladding Layer-Based Doping-Less Tunneling Field Effect Transistor: A Novel Low-Power High-Performance Device24
Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs24
Complementary-Switchable Dual-Mode SHF Scandium Aluminum Nitride BAW Resonator24
Hot Carrier Effect in Self-Aligned In–Ga–Zn–O Thin-Film Transistors With Short Channel Length24
MOSFET-Based Memristor for High-Frequency Signal Processing24
High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric With Ultralow Subthreshold Swing24
Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension24
Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition24
Study on 1-THz Sine Waveguide Traveling-Wave Tube24
Theoretical Study of Charge Carrier Lifetime and Recombination on the Performance of Eco-Friendly Perovskite Solar Cell24
Electron-Optic System With a Converged Sheet Electron Beam for a 0.2-THz Traveling-Wave Tube24
Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current24
Temporal Electron-Spin Splitter Based on a Semiconductor Microstructure Constructed on Surface of InAs/AlxIn1-x As Heterostructure by Patterning a Ferromagnetic Stripe and a Scho24
Noise-Resilient DNN: Tolerating Noise in PCM-Based AI Accelerators via Noise-Aware Training24
Hf0.5Zr0.5O₂-Based Ferroelectric Field-Effect Transistors With HfO₂ Seed Layers for Radiation-Hard Nonvolatile Memory Applications24
Nitrogen-Implanted Guard Rings for 600-V Quasi-Vertical GaN-on-Si Schottky Barrier Diodes With a BFOM of 0.26 GW/cm224
Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs24
Ultrahighly Sensitive QCM Humidity Sensor Based on Nafion/MoS2 Hybrid Thin Film24
1.7-kV Vertical GaN-on-GaN Schottky Barrier Diodes With Helium-Implanted Edge Termination24
Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing24
Resistivity Size Effect in Epitaxial Rh(001) and Rh(111) Layers23
Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory23
The Design of Aluminum Nitride-Based Lead-Free Piezoelectric MEMS Accelerometer System23
Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹23
An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor23
Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors23
Demonstration of a High-Power Ka-Band Extended Interaction Klystron23
Fabrication of Binder-Free TiO2 Nanofiber Electrodes via Electrophoretic Deposition for Low-Power Electronic Applications23
A Novel Dual-Directional SCR Structure With High Holding Voltage for 12-V Applications in 0.13-μm BCD Process23
Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics23
Modeling and Analysis of Normally-OFF p-GaN Gate AlGaN/GaN HEMT as an ON-Chip Capacitor23
Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process23
Effect of Program Error in Memristive Neural Network With Weight Quantization23
Low Temperature SoIC Bonding and Stacking Technology for 12-/16-Hi High Bandwidth Memory (HBM)23
Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode23
BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polariza23
Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal–Ferroelectric–Metal Capacitors23
Investigation of Imprint in FE-HfO₂ and Its Recovery23
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs23
High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O323
Cyclotron Resonance Maser With Zigzag Quasi-Optical Transmission Line: Concept and Modeling23
High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration22
Energy-Efficient All-Spin BNN Using Voltage-Controlled Spin-Orbit Torque Device for Digit Recognition22
Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit22
Sub 5 Å-EOT HfZr1–x O₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Proces22
A Skyrmion Diode Based on Skyrmion Hall Effect22
Active Thermal Management of High-Power LED Through Chip on Thermoelectric Cooler22
A 4T2R RRAM Bit Cell for Highly Parallel Ternary Content Addressable Memory22
Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance22
Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length22
Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT22
Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfO/AlOy ReRAMs22
Part I: Physical Insights Into Dynamic R ON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs22
Causes of the Difference Between Hall Mobility and Field-Effect Mobility for p-Type RF Sputtered Cu₂O Thin-Film Transistors22
On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs22
Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack22
Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties22
Influence of Reduction in Effective Channel Length on Device Operations of In-Ga-Zn-O Thin-Film Transistors With Variations in Channel Compositions22
Output-Power Enhancement of Vircator Based on Second Virtual Cathode Formed by Wall Charge on a Dielectric Reflector22
A New Design Paradigm for Auto-Nonvolatile Ternary SRAMs Using Ferroelectric CNTFETs: From Device to Array Architecture22
Characterization and Extraction of Power Loop Stray Inductance With SiC Half-Bridge Power Module22
High-Performance Pentacene/ZnO UV-Visible Photodetector Using Solution Method22
Logic Device Based on Skyrmion Annihilation22
Characterization and Modeling of Native MOSFETs Down to 4.2 K22
Silicene/MoS2 Heterojunction for High-Performance Photodetector22
Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics22
Modeling and Compensation of IR Drop in Crosspoint Accelerators of Neural Networks21
Study of a New Hydrogen Gas Sensor Synthesized With a Sputtered Cerium Oxide Thin Film and Evaporated Palladium Nanoparticles21
Vertical Tunneling Field-Effect Transistor With Germanium Source and T-Shaped Silicon Channel for Switching and Biosensing Applications: A Simulation Study21
High-Yield and Uniform NbO x -Based Threshold Switching Devices for Neuron Applications21
Impact of Nonuniform Thermionic Emission on the Transition Behavior Between Temperature-and Space-Charge-Limited Emission21
GaN Schottky Barrier Diode-Based Wideband and Medium-Power Microwave Rectifier for Wireless Power Transmission21
Modeling of Semiconductor Substrates for RF Applications: Part I—Static and Dynamic Physics of Carriers and Traps21
Flexible Room Temperature Ammonia Gas Sensor Based on Low-Temperature Tuning of Functional Groups in Grapheme21
Performance Improvement of 1T DRAM by Raised Source and Drain Engineering21
Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices21
Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications21
Analysis of Failure Mechanisms During the Long-Term Retention Operation in 3-D NAND Flash Memories21
AC-Stress Degradation and Its Anneal in SiC MOSFETs21
Vertically Stacked Nanosheets Tree-Type Reconfigurable Transistor With Improved ON-Current21
1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability21
A Physical Model for Bulk Gate Insulator Trap Generation During Bias-Temperature Stress in Differently Processed p-Channel FETs21
Time-Dependent Threshold Voltage Instability Mechanisms of p-GaN Gate AlGaN/GaN HEMTs Under High Reverse Bias Conditions21
Design and Cold Test of a G-Band 10-kW-Level Pulse TE01-Mode Gyrotron Traveling-Wave Tube21
Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling21
Effect of Aluminum Doping on Performance of HfO-Based Flexible Resistive Memory Devices21
Dielectric-Modulated Bulk-Planar Junctionless Field-Effect Transistor for Biosensing Applications20
Neural Network-Based and Modeling With High Accuracy and Potential Model Speed 20
High Performance Flexible Transistors With Polyelectrolyte/Polymer Bilayer Dielectric20
A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory20
Design and Performance of ScAlN/AlN Trapezoidal Cantilever-Based MEMS Piezoelectric Energy Harvesters20
Freestanding Dual-Gate Oxide-Based Neuromorphic Transistors for Flexible Artificial Nociceptors20
Gate-Induced Threshold Voltage Instabilities in p-Gate GaN HEMTs20
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