OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Transactions on Electron Devices is 43. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2022-06-01 to 2026-06-01.)

Article	Citations
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors	370
Improved Performance of MoS₂ Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO₂/Al₂O₃	124
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs	115
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs	110
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”	104
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs	93
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform	92
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator	84
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors	71
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing	69
Changes in the Editorial Board	69
Table of Contents	66
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing	64
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch	61
Mode-Locking Operation of a Ka-Band Helical Gyro-BWO Equipped With a Saturable-Absorber Feedback Loop	58
A Method to Isolate Intrinsic HCD and NBTI Contributions Under Self Heating During Varying V_G/V_D Stress in GAA Nanosheet PFETs	57
Pinned Photodiode Imaging Pixel With Floating Gate Readout and Dual Gain	57
Investigating Thermionic Emission Properties of Polycrystalline Perovskite BaMoO₃	54
Stack Optimization of TiO _x -Based Resistive Switching Devices Through Interface Engineering	54
IEEE Transactions on Electron Devices Publication Information	54
Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors	53
Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects	53
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices	53
Monolithic 3-D Integration of 2T0C DRAM and 1T1R RRAM for Accelerating Dynamic/Static Matrix Computation in Transformer Network	52
Roles of Trap States in the Dynamic Degradation of Polycrystalline Silicon Thin-Film Transistors Under AC Gate Bias Stress	51

A Physics-Based Compact Model for Silicon Cold-Source Transistors	49
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs	49
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study	48
Preliminary Analysis of the Coaxial Double Staggered Grating Structure for a Hollow Beam Backward Wave Oscillator	48
Compensation Method for Displacement Caused by CTE Mismatch in Micro-LED Bonding Process	47
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material	47
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field	46
HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization	46
Defect-Engineered Resistive Switching in van der Waal Metals	46
The Investigation of Reduced Variation Effect in FinFETs With Ultrathin 3-nm Ferroelectric Hf₀.₅Zr₀.₅O₂	45
TiO₂ Nanofibers Doped With NiS as Photoanode to Improve the Photovoltaic Conversion Efficiency of Dye-Sensitized Solar Cells	45
Modeling and Analysis of Terminal Capacitances in High-Power Devices: Application to p-GaN Gate HEMTs	45
Investigation of Peak-to-Valley Current Ratio of GaN/AlN Resonant Tunneling Diodes	45
Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs	44
Application of Pulsed Green Laser Activation to Top-Tier MOSFET Fabrication for Monolithic 3-D Integration	44
Analysis of Thermal Disturbance in Vertically Stacked Phase-Change Memory Using Multiphysics Simulation	44
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors	44
Study on Scalable Model of Multifinger Structure for GaN p-i-n Diode	44
IEEE Transactions on Electron Devices Publication Information	43