OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Transactions on Electron Devices is 43. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-11-01 to 2025-11-01.)

Article	Citations
IEEE Transactions on Electron Devices information for authors	190
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors	132
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency	96
Improved Performance of MoS₂ Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO₂/Al₂O₃	96
A 0.35-THz Extended Interaction Oscillator Based on Overmoded and Bi-Periodic Structure	89
Cyclotron Resonance Maser With Zigzag Quasi-Optical Transmission Line: Concept and Modeling	81
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs	80
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs	77
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements	70
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT	65
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”	63
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs	60
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor	58
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material	58
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates	57
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator	55
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals	55
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform	55
Utilizing Valley–Spin Hall Effect in Monolayer WSe₂ for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops	55
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors	54
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron	54
Changes in the Editorial Board	53
Table of Contents	51
Synaptic Transistors Based on Electrospun Aligned Nanowire for Neuromorphic Computing	51
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing	50

Physical Compact Model for Source-Gated Transistors for DC Application	50
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs	49
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp	49
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors	49
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures	49
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy	49
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices	49
Compact Modeling of Impact Ionization in High-Voltage Devices	49
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect	47
BTI Reliability of IGZTO FETs: Hydrogen Dynamics, AC/DC Stress Effects, and Advanced Modeling	47
Spontaneously Oxidized Cu_xO/β-Ga₂O₃ p-n Junction for Self-Powered Deep-Ultraviolet Photodetection	46
Performance Boost of Si TFETs by Insertion of III–V Dipole Formation Layer: A First Principle Study	46
Event-Driven CsPbBr₃ Perovskite Visual Neurons for Motion Direction Recognition in Low-Light Scenes	45
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C	45
Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective	45
Metamaterial-Inspired 0.22 THz Traveling-Wave Tubes With Double Sheet Beams	44
Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si	44
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition	44
L-Cysteine Functionalized Al_0.18Ga_0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection	43
Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell	43
Design and Experiment of 1 THz Slow Wave Structure Fabricated by Nano-CNC Technology	43