IEEE Transactions on Electron Devices

Papers
(The H4-Index of IEEE Transactions on Electron Devices is 40. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-05-01 to 2025-05-01.)
ArticleCitations
SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness92
Utilizing Valley–Spin Hall Effect in Monolayer WSe2 for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops85
Effect of Microwave Leakage on Backward Current in an X-Band Dual-Mode RBWO Packaged With Permanent Magnet84
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs84
Influence of BCB Protection on Irradiation Response of InP-Based HEMTs: A Comparative Study80
Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors77
Capacitance Modeling With Charge Partitions Covering Full-Region Operations of TFETs75
Pd/Ge/Ti/Pt/Au Metal Stack on Semi-Insulating Gallium Arsenide: Ohmic Contact and Temperature Dependence72
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform72
A High Voltage Gain Inverter Integrated With Enhancement- and Depletion-Mode a-InGaZnO Thin-Film Transistors68
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress58
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator57
Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules56
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors55
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron54
Changes in the Editorial Board52
Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors51
2021 EDS Education Award call for nominations49
IEEE Transactions on Electron Devices publication information49
Differential Signal Acquisition Using TFT Light-Sensing Pixel Array48
IEEE Transactions on Electron Devices information for authors48
Performance Analysis of the Direct-Charge β-Radiation Energy-Harvesting Method48
Analytical Study on a 700 V Triple RESURF LDMOS With a Variable High-K Dielectric Trench47
Compensating Nonuniform OLED Pixel Brightness in a Vertical Blanking Interval by Learning TFT Characteristics45
A MEMS Thermopile Pirani Sensor Integrated With Composite Nanoforests for Vacuum Monitoring in Semiconductor Equipment45
Accurate and Efficient Algorithm for Computing Structure Functions From the Spatial Distribution of Thermal Properties in Electronic Devices45
Design of Novel InP/InGaAs Photodetectors With NiO Transparent p-Region and Electrode45
New Failure Mechanism Induced by Current Limit for Superjunction MOSFET Under Single-Pulse UIS Stress45
Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition44
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors43
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field43
Mitigation of Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors Through Use of Correction Frame43
Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs43
Analysis of the Avalanche Operation of a GaN Photoconductive Semiconductor Switch43
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration42
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory42
Improved Performance of MoS2 Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO2/Al2O342
Research on Folded Double-Groove Waveguide With Two Sheet Beams Operating on High-Order TE20 Mode for High-Power Terahertz TWT42
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol41
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency41
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C40
A 0.35-THz Extended Interaction Oscillator Based on Overmoded and Bi-Periodic Structure40
Orientation Polarization Effect in Al2O3/Hydrogen-Terminated Diamond MISFETs40
Complementary Vacuum Field Emission Transistor40
Cyclotron Resonance Maser With Zigzag Quasi-Optical Transmission Line: Concept and Modeling40
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