OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Transactions on Electron Devices is 43. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-09-01 to 2025-09-01.)

Article	Citations
Utilizing Valley–Spin Hall Effect in Monolayer WSe₂ for Designing Low Power Nonvolatile Spintronic Devices and Flip-Flops	147
Demonstration of Reconfigurable FET and Logic Gates on Epitaxial Lateral Overgrowth Silicon Platform	124
Investigation on Robust Avalanche Capacity of Super-Junction IGBT Under UIS Stress	93
The Regime of the Efficiency Increase by Use of Long Circuits in the THz Cherenkov Oscillator	91
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors	87
Study of the Input Cavity Characteristics With Two-Beam Loading for Developing a Compact and High-Power Ka-Band Klystron	79
Changes in the Editorial Board	77
IEEE Transactions on Electron Devices publication information	69
IEEE Transactions on Electron Devices information for authors	68
Suppression of Circularly Polarized Microwave Dielectric Multipactor by Normal Gyromagnetic Field	66
Compact Numerical Modeling of Indirect Time-of-Flight CMOS Image Sensors	59
Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration	58
Improved Performance of MoS₂ Negative-Capacitance Field-Effect Transistors by Optimizing Gate-Stack of Al-Doped HfO₂/Al₂O₃	58
Model of Finite Velocity Injection Into Coaxial Cylindrical Diode Based on Ramo-Shockley Theory	58
Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency	56
Orientation Polarization Effect in Al₂O₃/Hydrogen-Terminated Diamond MISFETs	54
Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C	54
A 0.35-THz Extended Interaction Oscillator Based on Overmoded and Bi-Periodic Structure	54
Cyclotron Resonance Maser With Zigzag Quasi-Optical Transmission Line: Concept and Modeling	53
Mobility Enhancement Induced by Oxygen Gettering of TiAl for Metal Gated NMOSFETs	52
Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs	52
Defect-Engineered Resistive Switching in van der Waal Metals	51
The Reliability and Noise Investigation of Boron Diffusion Under Positive Bias Temperature Instability in 16 nm Node High Voltage FinFETs	51
Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores	49
Corrections to “Diamond-on-Si IGBT With Ultrahigh Breakdown Voltage and On-State Current”	49

Influences of Adjacent High Voltage on the Characteristics and Reliability of SOI Power Devices for Automotive Application	49
Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT	49
Low-Frequency Noise of 4H-SiC CMOS Technology for Analog ICs	49
Numerical Modeling of Dynamic Thermal Coupling in GaN HEMTs Calibrated by Transient Measurements	49
Performance Regulation of Near-Field Electroluminescent Cooling Device Based on 2-D Material	48
Low-Voltage Operated High DC Gain Amplification Stage Based on Large-Area Manufacturable Amorphous Oxide Semiconductor Thin-Film Transistor	48
Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates	47
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and Semimetals	47
A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode	46
Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs	45
Opposing Mean Error Compensation for Accuracy Enhancement in Analog Compute-in-Memory With Resistive Switching Devices	45
Avalanche Breakdown in the Base-Emitter- Shorted Silicon Avalanche Transistor Affected by Voltage Ramp	44
Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures	44
400-V Amorphous IGZO Thin-Film Transistors With Drift Region Doped by Hydrogen	44
Physical Compact Model for Source-Gated Transistors for DC Application	44
Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy	44
Table of Contents	43
Reliable and Efficient Phosphor-in-Glass-Based Chip-Scale Packaging for High-Power White LEDs	43
Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing	43
Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”	43