OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Transactions on Electron Devices is 38. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-09-01 to 2024-09-01.)

Article	Citations
High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS	106
Vertical β-Ga₂O₃ Power Transistors: A Review	106
The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia	104
Artificial Neural Network-Based Compact Modeling Methodology for Advanced Transistors	99
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices	88
(Ultra)Wide-Bandgap Vertical Power FinFETs	79
1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability	77
Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits	65
Ferroelectric Field Effect Transistors as a Synapse for Neuromorphic Application	65
Laser-Induced Graphene Printed Wearable Flexible Antenna-Based Strain Sensor for Wireless Human Motion Monitoring	60
Investigation of Carrier Transport Materials for Performance Assessment of Lead-Free Perovskite Solar Cells	59
Graphene/PtSe₂/Pyramid Si van Der Waals Schottky Junction for Room-Temperature Broadband Infrared Light Detection	58
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F² by Monolithic Stacking	58
Investigation of CsSn_0.5Ge_0.5I₃-on-Si Tandem Solar Device Utilizing SCAPS Simulation	57
Infrared Colloidal Quantum Dot Image Sensors	56
Design Insights of Nanosheet FET and CMOS Circuit Applications at 5-nm Technology Node	55
Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses	55
Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor	53
Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress	49
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I	47
“Hole Redistribution” Model Explaining the Thermally Activated R _ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs	47
High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer	47
Compact Modeling of Temperature Effects in FDSOI and FinFET Devices Down to Cryogenic Temperatures	46
Low Thermal Budget (<250 °C) Dual-Gate Amorphous Indium Tungsten Oxide (IWO) Thin-Film Transistor for Monolithic 3-D Integration	44
Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study	44

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current	42
Enhancement-Mode Atomic-Layer-Deposited In₂O₃ Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen	42
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II	42
Ferroelectric HfZrO₂ With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training	42
Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃	41
Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format	41
SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge	40
Synergistic Modulation of Synaptic Plasticity in IGZO-Based Photoelectric Neuromorphic TFTs	40
Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors	38
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization	38
Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior	38
Soft-Error Resilient Read Decoupled SRAM With Multi-Node Upset Recovery for Space Applications	38
Hydrothermal Synthesis and Improved CH₃OH-Sensing Performance of ZnO Nanorods With Adsorbed Au NPs	38
Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs	38