OOIR: Observatory of International Research

Papers

(The H4-Index of IEEE Transactions on Electron Devices is 37. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)

Article	Citations
The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia	107
Artificial Neural Network-Based Compact Modeling Methodology for Advanced Transistors	100
1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability	77
Ferroelectric Field Effect Transistors as a Synapse for Neuromorphic Application	66
Accurate Program/Verify Schemes of Resistive Switching Memory (RRAM) for In-Memory Neural Network Circuits	65
Investigation of Carrier Transport Materials for Performance Assessment of Lead-Free Perovskite Solar Cells	61
Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F² by Monolithic Stacking	61
Laser-Induced Graphene Printed Wearable Flexible Antenna-Based Strain Sensor for Wireless Human Motion Monitoring	61
Graphene/PtSe₂/Pyramid Si van Der Waals Schottky Junction for Room-Temperature Broadband Infrared Light Detection	59
Investigation of CsSn_0.5Ge_0.5I₃-on-Si Tandem Solar Device Utilizing SCAPS Simulation	59
Infrared Colloidal Quantum Dot Image Sensors	57
Design Insights of Nanosheet FET and CMOS Circuit Applications at 5-nm Technology Node	55
Low Thermal Budget (<250 °C) Dual-Gate Amorphous Indium Tungsten Oxide (IWO) Thin-Film Transistor for Monolithic 3-D Integration	49
Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress	49
“Hole Redistribution” Model Explaining the Thermally Activated R _ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs	48
Compact Modeling of Temperature Effects in FDSOI and FinFET Devices Down to Cryogenic Temperatures	48
High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs With High-Quality AlN Buffer Layer	47
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I	47
Enhancement-Mode Atomic-Layer-Deposited In₂O₃ Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen	46
Realizing High-Performance β-Ga₂O₃ MOSFET by Using Variation of Lateral Doping: A TCAD Study	45
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II	43
SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge	42
1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current	42
Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach	41
Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format	41

Synergistic Modulation of Synaptic Plasticity in IGZO-Based Photoelectric Neuromorphic TFTs	41
Hydrothermal Synthesis and Improved CH₃OH-Sensing Performance of ZnO Nanorods With Adsorbed Au NPs	40
Soft-Error Resilient Read Decoupled SRAM With Multi-Node Upset Recovery for Space Applications	40
Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior	39
Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors	38
TCAD-Augmented Machine Learning With and Without Domain Expertise	38
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization	38
Numerical Simulation: Design of High-Efficiency Planar p-n Homojunction Perovskite Solar Cells	37
A Highly Scalable Junctionless FET Leaky Integrate-and-Fire Neuron for Spiking Neural Networks	37
Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics	37
Design and Characterization of an Aluminum Nitride-Based MEMS Hydrophone With Biologically Honeycomb Architecture	37
Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration	37
Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions	37