OOIR: Observatory of International Research

Papers

(The H4-Index of Applied Physics Letters is 53. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-04-01 to 2024-04-01.)

Article	Citations
Perspective on the future of silicon photonics and electronics	253
A 1.86-kV double-layered NiO/ β -Ga2O3 vertical p–n heterojunction diode	139
Two-dimensional van der Waals electrical contact to monolayer MoSi2N4	133
Superconducting nanowire single-photon detectors: A perspective on evolution, state-of-the-art, future developments, and applications	127
Solar-driven thermal-wind synergistic effect on laser-textured superhydrophilic copper foam architectures for ultrahigh efficient vapor generation	123
High performance CsPbBr3 quantum dots photodetectors by using zinc oxide nanorods arrays as an electron-transport layer	103
Developing silicon carbide for quantum spintronics	100
Spin-orbit torques: Materials, physics, and devices	100
Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation	95
Low defect density and small I−V curve hysteresis in NiO/ β -Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2	95
Work function tunable laser induced graphene electrodes for Schottky type solar-blind photodetectors	95
633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress	94
Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes	86
Interfacial charge transfer exciton enhanced by plasmon in 2D in-plane lateral and van der Waals heterostructures	85
Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization	83
Recent developments, challenges, and pathways to stable dropwise condensation: A perspective	82
Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors	80
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor	78
Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W	76
Myths and truths about optical phase change materials: A perspective	75
Electrically tunable high Curie temperature two-dimensional ferromagnetism in van der Waals layered crystals	74
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy	74
β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2	73
Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes	69
A reconfigurable active acoustic metalens	69

β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings	68
Semiconductor-to-metal transition in bilayer MoSi2N4 and WSi2N4 with strain and electric field	66
Temporal multilayer structures for designing higher-order transfer functions using time-varying metamaterials	65
A Dirac-semimetal two-dimensional BeN4: Thickness-dependent electronic and optical properties	65
Broadband topological valley transport of elastic wave in reconfigurable phononic crystal plate	64
Deterministic quantum entanglement between macroscopic ferrite samples	63
Radiative cooling for continuous thermoelectric power generation in day and night	62
Goos–Hänchen effect enabled optical differential operation and image edge detection	62
Determining the angle-of-arrival of a radio-frequency source with a Rydberg atom-based sensor	61
Half-Heusler thermoelectric materials	60
Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE	60
Auger scattering dynamic of photo-excited hot carriers in nano-graphite film	60
Acoustic impedance regulation of Helmholtz resonators for perfect sound absorption via roughened embedded necks	59
Two-dimensional porous graphitic carbon nitride C6N7 monolayer: First-principles calculations	58
Low temperature homoepitaxy of (010) β -Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window	57
Perspectives in flow-induced vibration energy harvesting	57
Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing	57
Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (HfxZr1−x)O2 thin films	57
A predictive model of the temperature-dependent inactivation of coronaviruses	56
Transverse thermoelectric generation using magnetic materials	56
Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films	55
Tunable magnetic properties in van der Waals crystals (Fe1−xCox)5GeTe2	55
AI-enabled high-resolution scanning coherent diffraction imaging	54
Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions	54
Uniform multilevel switching of graphene oxide-based RRAM achieved by embedding with gold nanoparticles for image pattern recognition	54
Ultrahigh emissivity of grating-patterned PDMS film from 8 to 13 μ m wavelength regime	53
Differential quartz-enhanced photoacoustic spectroscopy	53
Experimental demonstration of externally driven millimeter-wave particle accelerator structure	53