OOIR: Observatory of International Research

Papers

(The H4-Index of Applied Physics Letters is 53. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2020-11-01 to 2024-11-01.)

Article	Citations
Perspective on the future of silicon photonics and electronics	328
Superconducting nanowire single-photon detectors: A perspective on evolution, state-of-the-art, future developments, and applications	166
Two-dimensional van der Waals electrical contact to monolayer MoSi2N4	161
Solar-driven thermal-wind synergistic effect on laser-textured superhydrophilic copper foam architectures for ultrahigh efficient vapor generation	130
Spin-orbit torques: Materials, physics, and devices	124
Low defect density and small I−V curve hysteresis in NiO/ β -Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2	110
Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors	108
Work function tunable laser induced graphene electrodes for Schottky type solar-blind photodetectors	107
Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization	102
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy	96
Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W	96
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor	94
Myths and truths about optical phase change materials: A perspective	88
β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2	87
β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings	80
Semiconductor-to-metal transition in bilayer MoSi2N4 and WSi2N4 with strain and electric field	78
Broadband topological valley transport of elastic wave in reconfigurable phononic crystal plate	77
Temporal multilayer structures for designing higher-order transfer functions using time-varying metamaterials	76
A reconfigurable active acoustic metalens	73
Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes	72
A Dirac-semimetal two-dimensional BeN4: Thickness-dependent electronic and optical properties	72
Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films	71
Determining the angle-of-arrival of a radio-frequency source with a Rydberg atom-based sensor	71
Differential quartz-enhanced photoacoustic spectroscopy	71
Transverse thermoelectric generation using magnetic materials	70

Auger scattering dynamic of photo-excited hot carriers in nano-graphite film	69
Half-Heusler thermoelectric materials	68
Prospects and challenges of quantum emitters in 2D materials	68
Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios	66
Topological sensor on a silicon chip	66
Tunable underwater acoustic metamaterials via quasi-Helmholtz resonance: From low-frequency to ultra-broadband	65
Two-dimensional porous graphitic carbon nitride C6N7 monolayer: First-principles calculations	65
Perspectives in flow-induced vibration energy harvesting	64
Active controllable spin-selective terahertz asymmetric transmission based on all-silicon metasurfaces	63
Polarization-insensitive composite gradient-index metasurface array for microwave power reception	62
Spintronic sources of ultrashort terahertz electromagnetic pulses	60
Perspective on mode-division multiplexing	60
Perspective on ceramic materials for 5G wireless communication systems	59
Real time THz imaging—opportunities and challenges for skin cancer detection	59
Demonstration of 4.7 kV breakdown voltage in NiO/ β -Ga2O3 vertical rectifiers	57
Simplified Josephson-junction fabrication process for reproducibly high-performance superconducting qubits	57
Wave trapping by acoustic black hole: Simultaneous reduction of sound reflection and transmission	57
A perspective on scaling up quantum computation with molecular spins	57
Quantum dots as potential sources of strongly entangled photons: Perspectives and challenges for applications in quantum networks	56
Magnetic properties of NbSi2N4, VSi2N4, and VSi2P4 monolayers	56
Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy	56
Fabrication of low-loss quasi-single-mode PPLN waveguide and its application to a modularized broadband high-level squeezer	55
Vertical β -Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition	54
On the exceptional temperature stability of ferroelectric Al1-xScxN thin films	54
Ultrafast Ising Machines using spin torque nano-oscillators	54
A perspective on the next generation of invisibility cloaks—Intelligent cloaks	53
Ultrawide bandgap semiconductors	53
Tunable spin electronic and thermoelectric properties in twisted triangulene π -dimer junctions	53
Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination	53