Applied Physics Letters

Papers
(The H4-Index of Applied Physics Letters is 55. The table below lists those papers that are above that threshold based on CrossRef citation counts [max. 250 papers]. The publications cover those that have been published in the past four years, i.e., from 2021-03-01 to 2025-03-01.)
ArticleCitations
Voronoi diagrams metallic mesh for transparent EMI shielding379
Stable magnetocaloric effect over an ultrawide temperature range of 146–320 K via hydrostatic pressure in kagome magnets186
Single mode, distributed feedback interband cascade lasers grown on Si for gas sensing140
Sub-terahertz PAM4 modulator based on transmission characteristic reconstruction131
Effect of Cr/Al ratio on the microstructure and mechanical properties of CoFeNiCrxAl1−x high-entropy alloys121
Hanle spin precession induced inverted magnetoresistance in chiral/semiconductor systems115
Lowering the skyrmion depinning current in synthetic antiferromagnetic systems112
Advanced optical reinforcement materials based on three-dimensional four-way weaving structure and metasurface technology109
Enhanced electronic property of wafer-scale monolayer MoS2 through S/Mo ratio optimization96
Ultrasensitive probing of nematic order parameter via weak measurement93
Point defect diffusion in III-nitrides: A key mechanism for thermal degradation and non-radiative recombination in GaInN/GaN quantum well structures90
Compact 852 nm Faraday optical frequency standard88
Investigation of the 4f146s2 1S0−4f135d6s2 (J= 2) clock transition at 431 nm of 171Yb atoms trapped in an optical lattice86
Observation of transient trion induced by ultrafast charge transfer in graphene/MoS2 heterostructure85
Transmission of photonic entangled states encoded via eigenstates of photon-number parity operator84
Unipolar neuromorphic memtransistors with reconfigurable inhibition–excitation switching based on antagonistic dual mechanisms83
Retraction: “Direct imaging of Si incorporation in GaAs masklessly grown on patterned Si substrates” [Appl. Phys. Lett. 58, 2090 (1991)]83
A simple method to find temporal overlap between THz and x-ray pulses using x-ray-induced carrier dynamics in semiconductors82
Perspective on phase change composites in high-efficiency solar-thermal energy storage82
Facile synthesis of vanadium oxide thin films by atomic layer deposition and post-annealing82
Formation and stability of Ge nanocrystals in polymorph converted Ga2O3: Temperature-driven journey81
A phononic crystal waveguide using surface waves below the sound cone79
Homogeneous linewidth behavior of narrow optical emitters at sub-kelvin temperatures79
Optical anisotropy in WS2/ReS2 heterostructure with one-dimensional moiré pattern76
Chemical-state imaging of a mammalian cell through multi-elemental soft x-ray spectro-ptychography76
Extended T2 times of shallow implanted NV in chemically mechanically polished diamond74
High thermal durability and thermoelectric performance with ultra-low thermal conductivity in n-type single-walled carbon nanotube films by controlling dopant concentration with cationic surfac73
Omnidirectional miniature RFID tag72
Low voltage and high bandwidth surface-illuminated three-terminal Ge-on-Si APD with multiple biasing configurations71
Manipulating the electronic and magnetic properties by ferroelectric polarization switching in 2D NiCl2/Ga2S3 van der Waals heterostructure70
Geometric effects in the measurement of the remanent ferroelectric polarization at the nanoscale70
Magnon signatures of multidimensional reconfigurations in multilayer square artificial spin ices70
Write error reduction in magnetic tunnel junctions for voltage-controlled magnetoresistive random access memory by using exchange coupled free layer69
Non-monotonic fluctuation of structural heterogeneity in metallic glass due to cyclic rapid heat treatment69
Suppression of autocorrelation artifacts in PS-OCT images based on spectral phase interpolation68
Quantum mode-locked Faraday laser67
Shared-aperture full-duplex Janus meta-lens for asymmetric focusing of electromagnetic waves65
An innovative 3D-NAND design based on light-emitting cell for high reliability and low power consumption65
A synaptic transistor with a stacked layer of SiNx and SiO2 deposited from hexamethyldisiloxane/O265
Uniaxial magnetic anisotropy and weak phonon–spin coupling of a single Ni atom bonded to iridium-doped graphene63
Determination of microwave material properties at cryogenic temperatures62
Size effect on Raman measured stress and strain induced phonon shifts in ultra-thin silicon film61
Fragmented charged domain wall below the tetragonal-orthorhombic phase transition in BaTiO361
High-temperature performance of metal/n-Ga2O3/p-diamond heterojunction diode fabricated by ALD method61
Field-free ultrafast magnetization reversal of a nanodevice by a chirped current pulse via spin-orbit torque61
First-principles insights into Bi2XO5 (X = Se, Te) monolayers as high-k gate dielectrics for 2D electronics60
MoO2-modified carbon nanotablets prepared by assembly of a polyoxomolybdate precursor for enhanced microwave absorption properties60
Growth of monolayer 1T′-WTe2 with a nearly complete coverage60
Coexistence of topological nodal lines and Weyl nodes in a room-temperature half-metallic ferromagnet Cr3Si2Te660
Construction of oriented Zn (002) facets via 3D conductive frameworks for enhanced performance in fiber-based zinc-ion batteries59
Resonant-type multifunctional device using organic piezoelectrics for detecting differential pressure and acceleration57
The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method57
Methane sensing via unbalanced nonlinear interferometry using a CMOS camera and undetected mid-infrared light57
Room temperature colossal superparamagnetic order in aminoferrocene–graphene molecular magnets55
Hard x-ray photoemission study on strain effect in LaNiO3 thin films55
Layer dependent interlayer coherent phonon dynamics in PdSe2 films55
Non-uniform Gd distribution and magnetization profiles within GdCoFe alloy thin films55
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